Abstract: This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.

Abstract: An organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer.

Abstract: Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

Abstract: A convenient way for preparing thin layers of organic semiconducting materials comprises application or deposition of particles of a semiconducting material containing an organic semiconductor on a suitable surface, and converting these particles into a semiconducting layer on a substrate by application of pressure and optionally elevated temperatures.

Abstract: This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Abstract: To provide a semiconductor substrate, a semiconductor device, a light emitting device and an electronic device which have a low price, a long lifetime, and a high luminescent efficiency, and moreover are capable of being bent. A graphite substrate having heat resistance and having flexibility with respect to external force, and a first semiconductor layer, provided on the graphite substrate, which is made of a nitride of the Group XIII are included, and a method such as pulse sputter deposition can be used in forming the first semiconductor layer on the graphite substrate, to thereby allow inexpensive manufacture to be possible. In addition, since the nitride of the Group XIII is an inorganic substance, it has a long lifetime, and thus a high luminescent efficiency can be obtained. Moreover, since the graphite substrate has flexibility with respect to external force, it can also be bent.

Abstract: A method of forming an organic layer for an organic electronic device (e.g., an OLED) by using a liquid composition comprising a small molecule organic semiconductor material mixed in a solvent preparation in which the content of higher boiling impurities is reduced. The solvent preparation comprises a high boiling point solvent and 0.1 wt % or less of impurities having a higher boiling point than the solvent. The liquid composition is deposited on a surface by inkjet printing to form the organic layer. Also, provided are liquid compositions which can be used to make organic layers.

Abstract: The invention relates to an improved electronic device, like an organic field emission transistor (OFET), which has a short source to drain channel length and contains an organic semiconducting formulation comprising a semiconducting binder.

Abstract: According to a first aspect, the present invention provides a method for forming a semiconductor film comprising a first step of providing a solution comprising a first organic semiconductor and a second organic semiconductor on a surface of a substrate. The solution is then dried to form the semiconductor film so that it comprises discrete domains of the first organic semiconductor in a matrix of the second organic semiconductor which electrically connects adjacent domains of the first organic semiconductor. The first and second semiconductors are of the same conductivity type. The mobility of charge carriers in the domains of the first organic semiconductor is higher than the mobility of charge carriers in the matrix of the second organic semiconductor.

Abstract: An organic optoelectronic device and a method for manufacturing the same are disclosed. In one aspect, the device has a stack of layers. The stack includes a buffer layer and a first organic semiconductor layer adjacent to the buffer layer at a first side of the buffer layer. The buffer layer includes at least one transition metal oxide doped with a metal.

Abstract: Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M?-R-T structure, where M?, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.

Abstract: A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer.

Abstract: There is provided a switching element including two electrodes and an organic bistable material sandwiched between the electrodes, which is expected to be applied to an organic memory element or the like. A switching element which includes: two electrodes; and an organic thin film containing a metal fine particle and interposed between the electrodes, and which exhibits such a current bistability that the switching element has two stable resistance values in response to a voltage applied, the switching element characterized in that the metal fine particle is dispersed in the organic thin film with a metal fine particle-dispersing agent containing a polymer having a dithiocarbamate group and having a weight average molecular weight of 500 to 5,000,000.

Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Abstract: A field-effect transistor includes a channel-forming region composed of an organic compound crystal including ?-electron conjugated molecules each containing chalcogen atoms as a constituent, wherein the distance between chalcogen atoms of adjacent ?-electron conjugated molecules is short, and the organic compound crystal has a periodic structure in which ?-electron conjugated molecules are two-dimensionally or three-dimensionally linked together.

Abstract: Self-assembled organic monolayers on epitaxial graphene are described. The organic molecules are perylene derivatives including 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) molecules arranged in a herringbone phase and/or molecules are of the following formula: wherein R1 and R2 are alkyl groups. The organic monolayers can be patterned. Metal oxides can also be deposited on the organic monolayers. Methods of forming the self-assembled organic monolayers are also described.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: The presently disclosed embodiments are directed to the detection and monitoring of corona effluent. The present embodiments pertain to a corona sensing device that employs a film of organic charge transporting material, as the active component in a corona effluent sensing device, that is disposed onto a patterned electrode bearing support member.

Abstract: The present invention relates to new phosphaphenanthrene compounds with excellent light emitting property and an organic light emitting diode (OLED) using the same.

Abstract: An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed of a first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond and a second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, wherein the second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.

Abstract: An organic electroluminescent device including an anode on a substrate, an organic luminescent layer on the anode and a cathode on the organic luminescent layer is provided.

Abstract: The invention relates to novel formulations comprising an organic semiconductor (OSC) and a conductive additive, to their use as conducting inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells, to methods for preparing OE devices using the novel formulations, and to OE devices and OPV cells prepared from such methods and formulations.

Abstract: A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques.

Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

Abstract: Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c:

Abstract: An organic semiconductor material represented by the following general formula (1): wherein X1 to X4 each independently represent a chalcogen atom; and at least one of R1 and R2 represents a substituent for obtaining solubility, and R1 and R2 may be connected to each other to form a ring.

Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: Substrate structures and fabrication methods thereof. A substrate structure includes a bendable substrate and an inorganic electrode structure on the bendable structure, wherein the inorganic electrode structure includes a conductive layer or a semiconductor layer. The inorganic electrode structure includes carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The bendable substrate includes polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).

Abstract: A method comprising reducing an acenequinone to form an acenepolyhydrodiol by exposing the acenequinone to a reducing environment comprising an alkoxyaluminate.

Abstract: A method of producing an electronic or electro-optic device, and the devices produced, includes producing a first electrode by a solution process, producing a second electrode by a solution process, and lamination an active polymer layer between the first and second electrodes.

Abstract: The invention provides a method for fabricating a nano-array comprising the following steps. A template with a plurality of nano-holes is provided. A polymer is embossed by the template to integrally form a plurality of nano-protrusions thereon, and demolding to reveal the nano-protrusions. The nano-protrusion has a concave or convex top surface.

Abstract: A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulating layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a heterocyclic compound containing a nitrogen atom formed by condensation between five member rings each having a nitrogen atom at their condensation sites or between a five member ring and a six member ring each having a nitrogen atom at their condensation sites. The transistor became to have a fast response speed (driving speed), and further, achieved a large on/off ratio getting an enhanced performance as a transistor.

Abstract: Molecular systems are provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises the molecular system, which has an electric field induced band gap change, and thus a change in its electrical conductivity, that occurs via one of the following mechanisms: (1) molecular conformation change; (2) change of extended conjugation via chemical bonding change to change the band gap; or (3) molecular folding or stretching. Nanometer-scale reversible electronic switches are thus provided that can be assembled easily to make cross-bar circuits, which provide memory, logic, and communication functions.

Abstract: Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000.

Abstract: Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component.

Abstract: A method includes chemically bonding a polymeric material to a self-assembled molecular film that is chemically bonded to a surface of a substrate. The self-assembled molecular film includes one or more defect sites and a plurality of active device molecules, each of the plurality of active device molecules including a molecular switching moiety having a self-assembling connecting group at one end of the moiety and a linking group at an opposed end of the moiety. The polymeric material chemically bonds to at least some of the linking groups of the plurality of active device molecules, causing the formation of the self-assembled molecular layer covering the plurality of active device molecules and the defect site(s).

Abstract: A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.

Abstract: A method for selective growth of organic molecules on a substrate is proposed. The method comprises: creating a pattern of nucleation sites for the organic molecules on the substrate; depositing of organic molecules at the nucleation sites by vapor deposition. An organic material based device obtained by performing the method is also proposed. The method offers an alternative to methods that are known the fields of coating technology or semiconductor fabrication.

Abstract: Disclosed is a novel fluorene derivative and an organic electronic device using the same. The organic electronic device has excellent efficiency, driving voltage, and a lifespan.

Abstract: Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region.

Abstract: A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule.

Abstract: An organic field effect transistor comprising a gate electrode 2, a gate insulating layer 3, a semiconductor layer 4, a source electrode 7, and a drain electrode 8, wherein the source electrode 7 and the drain electrode 8 are composed of conductive layers 6 and 6?, and compound layers 5 and 5? comprising an acceptor compound, respectively, wherein the compound layers 5 and 5? are each located in contact with the semiconductor layer 4, and wherein the semiconductor layer 4 contains a polymer compound having an ionization potential of 5.0 eV or more.

Abstract: A method for forming a semiconductor body, the method comprising: forming a mixture of an organic semiconducting material and a binder material; causing the semiconducting material to at least partially solidify; and causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material.

Abstract: An organic field-effect transistor includes between an organic semiconductor layer (203) and a gate electrode (204) a polymer membrane (205) having a ion-conducting spatial area (206) between a channel region and the gate electrode. Due to the ion-conducting spatial area (206) a distance between the gate electrode and the organic semiconductor layer can be longer than that in an organic field-effect transistor according to the prior art.

Abstract: Disclosed is a stable organic thin film transistor having good switching property and a process for manufacturing an organic thin film transistor by a simple method. The organic thin film transistor comprises a substrate and provided thereon, at least a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, wherein the organic thin film transistor comprises a mercapto group-containing compound represented by the following formula (I), Formula (I) (R)n—Si(A)3-n—(B) wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2.

Abstract: Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.

Abstract: A diode includes an organic composite plate, a pressing element, a first electrode, and a second electrode. The organic composite plate has a plurality of carbon nanotubes uniformly distributed therein and includes a first portion and a second portion opposite to the first portion. The pressing element is disposed on the first portion of the organic composite plate. The first and second electrodes are electrically connected to the first and second portions of the organic composite plate, respectively. The diode employed with the carbon nanotubes has a changeable characteristic, such as voltage, current, via controlling the pressure applied by the pressing element.

Abstract: A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it.

Abstract: The invention relates to a material for producing a functional layer of an organic electronic component, in particular a material suitable for processing by printing. In the material proposed according to the invention, a functional substance is present in a polymer matrix, e.g. in dissolved or suspended fashion.