Abstract: An organic light emitting display for minimizing light from entering the pixels is provided. The organic light emitting display includes a substrate including a pixel region and a pixel-separating region between pixel regions; a first insulating layer on the substrate; a first electrode in a pixel region and on the first insulating layer; a pixel definition layer overlapping an edge region of the first electrode and in a region between the pixel region and the pixel-separating region; an organic light emitting layer on the first electrode and the pixel definition layer; a second electrode on the organic light emitting layer; and a black matrix between the first insulating layer and the pixel definition layer and extending outwardly past an edge region of the pixel definition layer into the pixel-separating region, such that the pixel definition layer is separated from the first insulating layer.

Abstract: A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics.

Abstract: The present invention relates to N,N?-bis(fluorophenylalkyl)-substituted perylene-3,4:9,10-tetracarboximides, their preparation and their use as charge transport materials, exciton transport materials or emitter materials.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: An organic electroluminescence element including at least two light-emitting layers disposed between an anode and a cathode, wherein the at least two light-emitting layers include a light-emitting layer A that contains an electron transporting light-emitting material and a hole transporting host material, wherein a concentration of the electron transporting light-emitting material gradually increases from an anode side toward a cathode side of the light-emitting layer A, and a light-emitting layer B that contains a hole transporting light-emitting material and an electron transporting host material, wherein a concentration of the hole transporting light-emitting material gradually decreases from an anode side toward a cathode side of the light-emitting layer B. An organic EL element with high light-emission efficiency and excellent durability is provided.

Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

Abstract: Disclosed is an organic light emitting device. The organic light emitting device comprises a first electrode, organic material layer(s) comprising a light emitting layer, and a second electrode. The first electrode, the organic material layer(s), and the second electrode form layered structure and at least one layer of the organic material layer(s) include the compound of Formula 1 or the compound of Formula 1 into which a thermosetting or photo-crosslinkable functional group is introduced.

Abstract: This invention relates to the fabrication of electronic devices, such as thin-film transistors, in particular thin-film transistors in which patterning techniques are used for definition of electrode patterns that need to be accurately aligned with respect to underlying electrodes. The fabrication technique is applicable to various patterning techniques, such as laser ablation patterning or solution-based, direct-write printing techniques which are not capable of forming structures with a small linewidth, and/or that cannot be positioned very accurately with respect to previously deposited patterns. We thus describe self-aligned gate techniques which are applicable for both gate patterning by a subtractive technique, in particular selective laser ablation patterning, and gate patterning by an additive technique such as printing. The techniques facilitate the use of low-resolution gate patterning.

Abstract: The present invention relates to a novel quinacridine derivative and an organic electronic device using the same.

Abstract: Disclosed is an adequately stable organic semiconductor material which can be used in a coating process while having high regularity and crystallinity. For obtaining such an organic semiconductor material, there is used a compound wherein 6-20 five-membered and/or six-membered aromatic rings are bound. This compound contains a partial structure represented by the formula (1) below, while having a mobility of not less than 1.0×10?3 cm2/Vs and an ionization potential in the solid state of not less than 4.8 eV and not more than 5.6 eV. (1) In the formula, R1 and R2 independently represent a hydrogen atom or a monovalent organic group. In this connection, at least one of R1 and R2 is an optionally substituted aromatic group.

Abstract: A dopant composition for organic semiconductors is an electron acceptor characterized by an evaporation point above 150° C. or a glass phase. The dopant composition includes a compound represented by structural formula (1): wherein R1 to R5 are independently hydrogen, chlorine, fluorine, nitro, or cyano; or a phenyl or annulated aromatic group optionally substituted with chlorine or fluorine. Also included are doped organic semiconductors and organic electronic components comprising the dopant composition, and methods of preparing the doped organic semiconductor.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: A semiconductive hole transport material containing polar substituent groups, the polar substituent groups substantially not affecting the electronic properties of the hole transport material and the hole transport material being soluble in a polar solvent.

Abstract: The present invention relates to a semi-conductive composition comprising carbon nanotubes in a matrix. These semiconductive compositions are useful in printing semiconducting portions of thin film transistors.

Abstract: A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH?CH—C6H5, or a distyryl structure expressed by C6H5—CH?CH—C6H5—CH?CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Abstract: It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose characteristics are not controlled by the work function of the conductive material. Moreover, it is other objects of the present invention to provide an organic transistor having favorable carrier mobility and to provide an organic transistor which is excellent in durability. A composite layer containing an organic compound and an inorganic material is used for an electrode for an organic field effect transistor, that is, at least part of one of a source electrode and a drain electrode in the organic field effect transistor.

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract: Disclosed is an organic semiconductor thin film having excellent coating property and high carrier mobility. Also disclosed are an organic thin film transistor using such an organic semiconductor thin film, and a method for manufacturing such an organic thin film transistor. Specifically disclosed is an organic semiconductor thin film formed on a substrate subjected to a surface treatment. This organic semiconductor thin film is characterized in that a surface treating agent used in the surface treatment has a terminal structure represented by a specific general formula.

Abstract: In order to increase the lifetime of organic electrical or electronic components, the invention provides an organic electrical or electronic component comprising at least one organic functional layer, wherein the component contains an (e-v) quenching substance for singlet oxygen.

Abstract: A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film.

Abstract: A novel semiconductor device comprises an azaperylene organic semiconductor of the formula I (I) wherein each of R1, R2, R3 and R4 independently is selected from H, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl, halogen, Si(RH)3, XR6; or one or more of R1 and R2, R2 and R3, R3 and R4, together with the carbon atoms they are bonding to, form a saturated or unsaturated, unsubstituted or substituted carbocyclic or heterocyclic ring; R5 is OR7, SR7, NR7R8, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, or unsubstituted or substituted aryl; R6 is Si(R11)3, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl; R7 is H, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted aryl

Abstract: To provide a long lifetime light-emitting element, in particular, to provide a long lifetime white light-emitting element, and to provide a light-emitting element having high luminous efficiency, in particular, to provide a white light-emitting element having high luminous efficiency. In a light-emitting element having, between an anode and a cathode, a first light-emitting layer containing a first light-emitting substance and a second light-emitting layer containing a second light-emitting substance which is provided to be in contact with the first light-emitting layer, the first light-emitting layer is divided into a layer provided on the anode side and a layer provided on the cathode side. At this time, a host material having a hole-transporting property is used for the layer provided on the anode side, and a host material having an electron-transporting property is used for the layer provided on the cathode side.

Abstract: Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering. Also provided is a semiconductor element itself.

Abstract: A molecular device including: at least one molecule of zinc cytochrome c; in which an electron or a hole is transferred within the at least one molecule of zinc cytochrome c bar utilizing transition of an electron between molecular orbitals of the at least one molecule of zinc cytochrome c. The molecular orbitals, for example, are a first molecular orbital localized in a first amino acid residue of the at least one molecule of zinc cytochrome c, and a second molecular orbital which is localized in a second amino acid residue of the at least one molecule of zinc cytochrome c and which has a maximum transition probability per unit time with respect to the first molecular orbital. In this case, the electron or the hole is transferred between the first amino acid residue and the second amino acid residue.

Abstract: Provided is a flat panel display device having an organic TFT and a manufacturing method thereof. The flat panel display device includes a first organic TFT having a first organic semiconductor active layer, and a second organic TFT having a second organic semiconductor active layer. At this point, the particle size of the organic semiconductor crystal of the first organic semiconductor active layer is greater than that of the organic semiconductor crystal of the second organic semiconductor active layer.

Abstract: To provide a memory element, a memory device, and a semiconductor device, which can be easily manufactured at low cost; are nonvolatile and data-rewritable; and have preferable switching properties and low operating voltage. A memory element of the invention includes a first conductive layer, a second conductive layer facing the first conductive layer, and an organic compound layer provided between the first and the second conductive layers. For the organic compound layer, a high molecular material having an amide group at least at one kind of side chains is used.

Abstract: A tandem OLED includes an anode and a cathode. The OLED also includes at least two electroluminescent units disposed between the anode and the cathode, wherein each of the electroluminescent units includes at least one hole-transporting layer and one organic light-emitting layer. An intermediate connector is disposed between adjacent electroluminescent units, wherein the intermediate connector includes an n-doped organic layer and an electron-accepting layer, the electron-accepting layer being disposed closer to the cathode than the n-doped organic layer, and wherein the electron-accepting layer includes one or more organic materials, each having a reduction potential greater than ?0.5 V vs. a Saturated Calomel Electrode, and wherein the one or more organic materials constitute more than 50% by volume of the electron-accepting layer.

Abstract: The object of the present invention is to provide a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device provided with the conductive layer and having high reliability, and electronic equipment provided with the electronic device.

Abstract: The invention relates to an organic electronic component with improved voltage stability and a method for producing it, wherein the voltage stability in the device is improved by targeted addition of additives and/or by formation of an interlayer. The invention for the first time makes it possible to stabilize organic electronic components by modification with a reducing, oxidizing and/or redox system comprising one and/or more functional materials and/or by incorporation of one or more interlayers comprising, as main constituent, a reducing, oxidizing and/or redox system, primarily in the area of relatively high voltages.

Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

Abstract: A single-crystal semiconductor layer which is separated from a single-crystal semiconductor substrate, and bonded to and provided over a supporting substrate is used, whereby a transistor having uniform characteristics can be formed. A reference circuit having a bipolar transistor is provided, whereby temperature dependence of a driving transistor which is driven by supplying current to the light-emitting element of a pixel is compensated.

Abstract: An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Abstract: The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds.

Abstract: An organic EL element of the present invention comprises a substrate, an electrode layer, an organic layer, and an electrode layer, whereas the organic layer 3 contains a vinyl polymer obtained by polymerizing a polymerizable monomer containing a compound represented by formula (1) or (2): wherein each of L1 and L2 is a bivalent group; each of X1, X2, X3, X4, X5, and X6 is alkyl group or the like; each of a and e is 0 or 1; each of b, f, g, and h is an integer of 0 to 3; c is an integer of 0 to 2; and d is an integer of 0 to 4.

Abstract: To provide an organic electroluminescent device having excellent durability and having high luminous efficiency and luminance, the organic electroluminescent device includes an organic compound layer containing at least one light emitting layer, wherein the light emitting layer contains a light emitting material and an electrically inactive organic compound capable of being subjected to dry film formation and having an energy difference Eg between highest occupied molecular orbital and lowest unoccupied molecular orbital of 4.0 eV or more.

Abstract: To provide an organic electroluminescent device having excellent durability and having high luminous efficiency and luminance, the organic electroluminescent device includes an organic compound layer containing a hole transport layer, a light emitting layer, and an electron transport layer between a pair of electrodes, wherein the hole transport layer contains a hole transport material and an electrically inactive organic compound capable of being subjected to dry film formation and having an energy difference Eg between highest occupied molecular orbital and lowest unoccupied molecular orbital of 4.0 eV or more.

Abstract: The present invention relates to materials useful as an electron or hole transport or injection layer in organic electrooptic devices. The material can form or be part of an electrically conductive organic layer, suitable for the transport of so-called positive charges or holes. The inventive HTL compounds are intrinsically doped HTLs which allows their deposition with greater homogeneity and reproducibility than matrix compositions consisting of a matrix material and an admixed p-dopant.

Abstract: A memory device is provided, which includes a first conductive layer, a second conductive layer, and a memory layer interposed between the first conductive layer and the second conductive layer. The memory layer includes a first portion and a second portion, each of which includes at least a nanoparticle. The nanoparticle includes a conductive material coated with an organic film. The first portion is in contact with the first conductive layer and the second conductive layer, and a side surface of the first portion is surrounded by the second portion.

Abstract: A functional molecular element whose functions can be controlled by an electric field based on a new principle. A Lewis base molecule (14) with positive permittivity anisotropy or a dipole moment in the major axis direction of the molecule is disposed, via a metal ion (3) that can act as a Lewis acid, in a pendant-like form on a key molecule (2) in the form of a line or film that has a conjugated system and exhibits conductivity, thereby forming a functional molecular element 1 that can realize a function where the conformation changes due to the application of an electric field. The conductive key molecule (2) and the Lewis base molecule (14) form a complex with the metal ion (3). When an electric field is applied in a direction perpendicular to the plane of the paper in FIG. 1(b), for example, the Lewis base molecule (14) performs a 90° “neck twisting” movement with the up-down direction in the drawing as the axis.

Abstract: The invention is to provide an organic EL device having a long life time that can reduce the driving voltage of the organic EL device, and to provide a material having a small ionization potential and exhibiting a large hole mobility by using as a layer or a zone. The organic electroluminescence device comprises a pair of electrodes and an organic light emitting layer sandwiched in the electrodes, characterized in that a hole transporting zone provided between the electrodes comprises the phenylenediamine derivative represented by the specific structural formulae, and the phenylenediamine derivative has a hole mobility of 10?4 cm2/V·s or more upon using as a layer or a zone, with the organic light emitting layer containing a charge injection auxiliary.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: The organic spin transport device, such as a magnetic tunnel junction or a transistor, includes at least two ferromagnetic material electrodes. At least one organic semiconductor structure is formed between the at least two ferromagnetic material electrodes. At least one buffer layer is positioned between the at least one organic semiconductor structure and the at least two ferromagnetic material electrodes. The at least one buffer layer reduces spin scattering between the at least two ferromagnetic material electrodes and the at least one organic semiconductor structure. The device exhibits a magnetoresistive effect that depends on the relative magnetization of the two ferromagnetic material electrodes.

Abstract: Provided are an electronic device including a bank structure and a method of manufacturing the same. The method of manufacturing the electronic device requires a fewer number of processes and comprises a direct patterning of insulating layers, such as fluorinated organic polymer layers, is possible using cost-efficient techniques such as inkjet printing.

Abstract: Organic semiconducting devices and applications exhibit high performance largely due to a treatment substrate interacting with an asymmetric linear compound. According to an example, an organic compound arrangement includes a treated substrate and an asymmetric linear compound on the treated substrate. The compound includes an acene and a thiophene unit fused to the acene and exhibits high mobility and, in some applications, a correspondingly high on/off ratio. The compound arrangement is suitable for implementation with a variety of semiconducting applications, such as thin-film applications, solar applications and transistor applications.

Abstract: Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

Abstract: The present invention relates to the use of precursors of following formula (I): independently of E or Z configuration, in which: R2 is an electron-withdrawing group, R1, R3, R4 and R5, which are identical or different, represent a hydrogen atom, an alkyl radical or an aryl radical, in the formation, by electrochemical grafting, of a homogeneous organic film, preferably with a thickness of less than or equal to 10 nm, on an electrically conducting or semiconducting surface; and to the corresponding process for the formation of an ultrathin homogeneous organic film on an electrically conducting or semiconducting surface.

Abstract: A method of forming a continuous layer of film, the method comprising providing a substrate having a surface, forming a first patterned layer of film on the surface, the first patterned layer of film including a plurality of first film units separated from each other, and forming a second patterned layer of film over the first patterned layer of film, the second patterned layer of film extending along the first patterned layer of film and including a plurality of second film units separated from each other, each of the plurality of second film units connecting at least two immediately adjacent first film units of the first patterned layer of film

Abstract: Disclosed are a metallocenyl dendrimer, an organic memory device using the metallocenyl dendrimer and a method for fabricating the organic memory device. The metallocenyl dendrimer may be composed of a dendrimer and metallocenes as redox species linked to the dendrimer. The organic memory device may possess the advantages of shorter switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.

Abstract: The present invention relates to the use of of perylene diimide derivatives as air-stable n-type organic semiconductors.

Abstract: An object of the invention is to provide an electronic device which can be easily manufactured using a wet method. One of electronic devices according to the invention has a first layer and a second layer. The first layer contains a first compound including a conjugated double bond. Here, the first compound preferably has a molecular weight of 100 to 1000. The second layer contains a seconds compound having a cyclic structure which is formed by an addition reaction between two molecules of the first compound. Here, a light emitting element or an element such as a transistor can be given as the electronic device.