Abstract: A receiver and a method for dynamically adjusting sensitivity of the receiver are provided. The receiver includes a detection unit and a receiving unit. The detection unit detects an input signal group, and outputs a detection result. The receiving unit receives the input signal group according to a sensitivity. Wherein, the receiving unit dynamically adjusts the sensitivity used for receiving the input signal group according to the detection result of the detection unit.

Abstract: An exemplary embodiment of such a system includes: a level shifter operative to transform an input signal into an output signal, the level shifter includes: a voltage distributor operative to receive the input signal and distribute potential levels at a first node and a second node to respectively output a first signal and a second signal, and the voltage distributor includes: a current limiter, operative to provide a limited current passing through the first node; a switch, operative to selectively establish an electrical connection between the first node and the second node; and a first transistor having a first electrode, a second electrode, and a first control electrode, wherein the first electrode is connected to the second node, the second electrode is utilized to receive the input signal, and the first control electrode is coupled to the first node; and an output circuit, operative to generate the output signal.

Abstract: A floating driving circuit according to the present invention comprises an input circuit to receive an input signal. A latch circuit receives a trigger signal for generating a latch signal. The latch signal is used to turn on/off a switch. A coupling capacitor is connected between the input circuit and the latch circuit to generate the trigger signal in response to the input signal. A diode is connected from a voltage source to a floating supply terminal of the latch circuit for charging a capacitor. The capacitor is coupled between the floating supply terminal and a floating ground terminal of the latch circuit to provide a supply voltage to the latch circuit. The latch circuit is controlled by the input signal via the coupling capacitor.

Abstract: A driver circuit includes a first transistor having a first node coupled to a high supply voltage and a second node coupled to an output node, wherein the first transistor passes the high supply voltage to the output node based on a first gate voltage on a gate of the first transistor. The driver circuit also includes a second transistor having a first node coupled to a low supply voltage and a second node coupled to the output node of the driver circuit, wherein the second transistor passes the low voltage to the output node based on a second gate voltage on a gate of the second transistor. The driver circuit further includes a logic block configured to control a slew rate of an output signal Vout at the output node by controlling a slew rate of the first gate voltage and controlling a slew rate of the second gate voltage.

Abstract: An integrated circuit may include at least a first replica driver stage coupled between a reference impedance input and a first power supply node and having a first programmable driver impedance set by a first driver configuration value in the same manner as a first output driver section of the integrated circuit. At least a first replica input termination stage may be coupled between the reference impedance input and the first power supply node and having a first programmable termination impedance set by a first termination configuration value in the same manner as a first input termination section of the integrated circuit. An impedance programming circuit may generate at least the first driver configuration value and the first termination configuration value in response to a potential at the reference node.

Abstract: According to various embodiments, a differential transmitter includes a driver and a predriver. In various embodiments, the predriver may include pull-up transistors and pull-down transistors configured in various ways to produce a staged output signal during a pull-up transition, wherein the higher bits of the input signal are switched slower in comparison with the lower bits of the input signal, while at the same time maintaining the simultaneous pull-down transition among all the bits. In various embodiments, the staged output of a predriver may further be dynamically disabled during a deemphasis exit transition. Other embodiments may be described and claimed.

Abstract: A circuit has a programmable mode control section, and a receiver section with first and second input terminals and an output terminal. The method and apparatus involve setting the mode control section to one of first and second states in response to user input, and operating the receiver section in first and second operational mode when the mode control section respectively has the first and second states, wherein in the first operational mode the receiver section provides higher performance and consumes more power than in the second operational mode.

Abstract: CMOS circuitry having mixed threshold voltages is disclosed. Circuits may be implemented using PMOS transistors, NMOS transistors, or both. For at least one given type of transistor (PMOS or NMOS), a circuit includes at least one transistor configured to switch at a first nominal threshold voltage and at least one transistor configured to switch at a second nominal threshold voltage. The different threshold voltages among a given transistor type are realized by varying the thickness of the transistor gate oxides and/or the channel dopant density, for example.

Abstract: A common-mode voltage controller for adjusting common-mode voltages between a first buffer and a second buffer at a subsequent stage or a preceding stage of the first buffer in a signal transmission circuit, comprising: a first reference voltage generation unit for generating a common-mode voltage corresponding to the first buffer; a second reference voltage generation unit for generating a common-mode voltage corresponding to the second buffer at the subsequent stage or the preceding stage; and a control signal generation unit for generating a control signal for controlling a common-mode voltage of the first buffer according to a difference voltage between an output of the first reference voltage generation unit and an output of the second reference voltage generation unit, and giving the control signal to the first buffer and first reference voltage generation unit.

Abstract: An advanced repeater with duty cycle adjustment. In accordance with a first embodiment of the present invention, an advanced repeater includes an output stage for driving an output signal line responsive to an input signal and a plurality of active devices for selectably adjusting a duty cycle of the signal. The advanced repeater may further include circuitry for producing a delayed version of the signal.

Abstract: Circuits, methods, and apparatus for dynamic control of source and termination impedances. One output stage provides a series termination when transmitting and a parallel termination when receiving data. A pull-up device has a nominal impedance of 50 ohms when the output stage pulls a pin from a low voltage to a high voltage, while a pull-down device has a nominal impedance of 50 ohms when the pin is pulled from a high voltage to a low voltage. Both the pull-up and pull-down devices are turned on when receiving data. Due to their non-linear current-voltage characteristics, the pull-up device appears as 50 ohms when the pin voltage is higher than one half the supply voltage, while the pull-down device appears as 50 ohms when the pin voltage is lower than one half the supply voltage. The pull-up and pull-down devices can be calibrated to provide a nominal 50 ohm impedance.

Abstract: A signal driver circuit having an adjustable output voltage for a high-logic level output signal. The signal driver circuit includes a signal driver configured to output a first logic level signal having a first voltage and output a second logic level signal having a second voltage according to an input signal. A voltage controlled voltage supply coupled to the signal driver provides the first voltage for the first logic level signal. The magnitude of the first voltage provided by the voltage controlled voltage supply is based on a bias voltage. A bias voltage generator can be coupled to the voltage controlled voltage supply to provide the bias voltage.

Abstract: An over-voltage tolerant input circuit has a pad. An Nwell bias circuit is electrically coupled to the pad. A current block circuit is electrically coupled to the Nwell bias circuit. The current block circuit has a control signal coupled to a gate of a transistor in a current path of the Nwell bias circuit. The current block circuit includes a logic gate having a first input coupled to the pad and a second input coupled to an over voltage signal of the Nwell bias circuit. An output of the logic gate is the control signal. An n-type transistor is coupled between the over voltage signal and the first input of the logic gate. A transistor has a gate electrically coupled to the control signal and has a drain coupled to the first input of the logic gate.

Abstract: A device includes a first circuit and an adjustment circuit. The adjustment circuit performs an adjustment on impedance of the first circuit. The adjustment circuit discontinues the adjustment on impedance while the first circuit is in an activated state.

Abstract: An integrated circuit includes a programmable logic device, a dedicated device, and an interface circuit between the two. The interface circuit can be easily modified to accommodate the different interface I/O demands of various dedicated devices that may be embedded into the integrated circuit. In one embodiment, the interface circuit may be implemented using a plurality of mask programmable uni-directional interface buffer circuits. The direction of any desired number of the interface buffer circuits can be reversed based on the needs of a desired dedicated device by re-routing the conductors in the interface buffer circuits in a single metal layer of the integrated circuit. In another embodiment, the interface circuit may be implemented using a hardware configurable bi-directional interface buffer circuit.

Abstract: According to one embodiment, a clamp transistor is inserted in series between a P-channel field effect transistor and an N-channel field effect transistor and an intermediate level between a high potential supplied to a source of the P-channel field effect transistor and a low potential supplied to a source of the N-channel field effect transistor is input into a gate of the clamp transistor to clamp a drain potential of the N-channel field effect transistor.

Abstract: First and second devices may simultaneously communicate bidirectionally with each other using only a single pair of LVDS signal paths. Each device includes an input circuit and a differential output driver connected to the single pair of LVDS signal paths. An input to the input circuit is also connected to the input of the driver. The input circuit may also receive an offset voltage. In response to its inputs, the input circuit in each device can use comparators, gates and a multiplexer to determine the logic state being transmitted over the pair of LVDS signal paths from the other device. This advantageously reduces the number of required interconnects between the first and second devices by one half.

Abstract: A thin-film logic circuit, which can be fabricated entirely of TFTs of the same conductivity type, includes a logic stage connected to a supply voltage and a level shifter connected to a wider voltage range provided by the supply voltage and ground. The logic circuit produces output signals with full rail-to-rail signal range from ground to the supply voltage and can implement or include a basic logic component such as an inverter, a NAND gate, or a NOR gate or more complicated circuits in which many basic logic components are cascaded together. Such logic circuits can be fabricated directly on flexible structures or large areas such as in flat panel displays.

Abstract: A high voltage switch having first and second states includes an input receiving an input voltage that is greater than a supply voltage. Each of first, second, and third MOS structures of a first conductivity type has a gate, a source, and a drain. The sources and drains of each of the MOS structures are electrically coupled in series between the input and ground. An output is electrically coupled to the input. When the switch is in the first state, the gate of the first MOS structure is pulled to ground, the gate of the second MOS structure is pulled to the supply voltage, and the gate of the third MOS structure is pulled to a voltage greater than the supply voltage and less than the input voltage. When the switch is in the second state, the gates of all of the MOS structures are pulled to the supply voltage.

Abstract: A communication system comprises a twisted pair communication link operably coupled to at least two driver stages for providing at least two independent input signals on the twisted pair communication link. The at least two independent input signals on the twisted pair communication link are summed and input to a comparator arranged to compare the summed signal to a reference value. The output of the comparator is input to the at least two driver stages. The outputs from the at least two driver stages are summed and fed back and summed with one or more of the independent input signals. In this manner, adverse effects due to non-ideal symmetry between components in a twisted pair communication link, such as a Controller Area Network system, are reduced.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric transistors. One such buffer may comprise a plurality of pre-drivers wherein each pre-driver of the plurality of pre-drivers is operably coupled to a transistor of a plurality of transistors. The buffer may further comprise one or more clamping devices, wherein at least one transistor of the plurality of transistors has a gate coupled to at least one clamping device of the one or more clamping devices.

Abstract: Disclosed are a method, system and apparatus for an improved fail safe I/O driver with pad feedback slew rate control are disclosed. In one embodiment, a pad driver circuit includes a pad node, an NMOS component, a feedback capacitor between the pad node and a gate of the NMOS component to control slew rate across a range of capacitor loads, a switch circuit between the pad node and the feedback capacitor, and a signal generator to generate a signal to control the switch circuit. The switch circuit to maintain a main driver circuit and a pre-driver circuit of the pad driver circuit in a fail safe state when an integrated circuit that includes the pad driver circuit is in the fail safe state. The pad driver circuit may include a PMOS component.

Abstract: Techniques are provided for controlling on-chip termination (OCT) impedance using OCT calibration blocks that serially transmit OCT control signals to input/output (IO) blocks. The OCT control signals are serially transmitted through a shared conductor. An OCT calibration block can transmit OCT control signals to one or multiple IO blocks. The IO blocks can be programmed to select OCT control signals from one of the calibration blocks. Enable signals enable one or more of the IO blocks to receive the selected OCT control signals. The OCT control signals are used to control the on-chip termination impedance at one or more IO buffers.

Abstract: An embodiment of a low-to-high-level voltage translator is proposed. This translator translates the low voltage swing signals for the core into high voltage swing signals of the I/O blocks. This translator may be particularly useful for high-speed application where the difference between the core and the I/O supply voltage is very large, e.g., the core is working at 0.8V and the I/O is working at 3.6V or higher without little or no static power dissipation. The proposed translator may give improved transition times and propagation delays as compared to conventional translators. The proposed translator may also use less hardware in comparison to other such translators.

Abstract: A level shifter circuit includes first and second transistors coupled in series and third and fourth transistors coupled in series. The fourth transistor is coupled to a first node between the first and the second transistors. The level shifter circuit also includes fifth and sixth transistors coupled in series and seventh and eighth transistors coupled in series. The eighth transistor is coupled to a second node between the fifth and the sixth transistors. The second and the eighth transistors receive a first input signal at control inputs. The fourth and the sixth transistors receive a second input signal at control inputs. The second input signal is inverted relative to the first input signal.

Abstract: A power switch driver includes a top driver switch, a bottom driver switch, a driver node between them, and driver logic. The power switch driver can turn on the power switch by controlling a gate voltage of the power switch to a first voltage level and to turn off the power switch by controlling the gate voltage from a lower second voltage level. The driver logic may include a pulse width generator programmer and a pulse width generator. The pulse width generator is controlled by the pulse width generator programmer and an input signal. Some power switch drivers include a feedback loop, coupled to the driver node and to the driver logic. The feedback loop may include a track-and-hold circuit, coupled to the driver node, to the pulse width generator through an error amplifier and to the input terminal.

Abstract: A driving circuit includes at least a driving unit. The driving circuit includes a first bias component, a second bias component, and four metal-oxide-semiconductor (MOS) transistors. The first bias component has a first node coupled to a first reference voltage and a second node for outputting a first bias current. The second bias component has a first node for draining a second bias current and a second node coupled to a second reference voltage different from the first reference voltage. Each of the MOS transistors has a control node for receiving one of input signal pairs, a node coupled to one of the bias components and another node coupled to one of the output ports of the driving circuit. The four MOS transistors are of a same conductive type.

Abstract: Circuits using four terminal transistors are disclosed. Such circuits can include various static and dynamic logic circuits, flip-flops, multiplexer, tri-state driver, phase detector, logic having variable speeds of operation, and/or analog circuit with such four terminal transistors operating in a linear or nonlinear mode.

Abstract: A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Abstract: Capacitive node isolation circuitry in an integrated circuit eliminates the creation of hot spots (stored charge) on high capacitive nodes during a test of electrostatic discharge (ESD) protection circuitry of the integrated circuit or during any ESD event occurring while the integrated circuit is in a standby mode. The isolation circuitry includes a standby mode logic circuit responsive to a standby mode signal received at one of its inputs and provides an output signal to a gate of an active switching device located in a path between an external pin of the integrated circuit and the internal high capacitive node. The output signal keeps the active switching device turned off for the duration of the ESD test or ESD event. The standby mode logic circuit transparently passes an input logic signal to the active switching device whenever the integrated circuit is in a normal operating mode.

Abstract: Low-power routing multiplexers that reduce static and dynamic power consumption are provided. A variety of different techniques are used to reduce power consumption of the routing multiplexers without significantly increasing their size. For example, power consumption of the routing multiplexers may be reduced by reducing short-circuit currents, reducing leakage currents, limiting voltage swing, and recycling charge within the multiplexer. Multiple power reduction techniques may be combined into a single routing multiplexer design. Low-power routing multiplexers may also be designed to operate in selectable modes, such as, a high-speed, high-power mode and a low-speed, low-power mode.

Abstract: Apparatus, systems, and methods are disclosed, such as those that comprise a center-swing signal generator that includes a push-pull center-swing driver coupled to a common-mode pre-emphasis module, the center-swing signal generator to receive a low swing current mode logic (CML) signal and output a center-swing signal, and a full-swing cross-coupled inverter coupled to the center-swing signal generator, the full-swing cross-coupled inverter to receive the center-swing signal and output a full-rail single-ended swing signal. Additional apparatus, systems, and methods are disclosed.

Abstract: A memory device and memory controller are coupled during driver training to reduce mismatches. The impedances of the system are controlled through a termination at the memory device to yield improvements in timing margins. The coupling of the components on a shared electrical bus through adjustment of the termination values during training removes known offset issues.

Abstract: An I/O module for an industrial controller provides single terminal outputs that may either sink or source current. This capability is provided through the use of dedicated sourcing and sinking transistors connected to the terminal and controlled by lockout logic ensuring activation of only the appropriate transistor in the correct phasing for sinking or sourcing operation modes.

Abstract: A level shifter includes a first level shift circuit that converts a signal level of a first pulse signal into an amplitude level of a power supply voltage, and a second level shift circuit that converts a signal level of the second pulse signal into an amplitude level. Each of the first and second level shift circuits includes a first transistor of a first conductivity type having a gate receiving the first and second pulse signals respectively, a source connected to a ground, and a drain that outputs a level shifted pulse signal, and a second transistor of a second conductivity type having a gate connected to the first transistor gate, a drain connected to the first transistor drain, and a source connected to the power supply via a connected transistor group, the connected transistor group includes at least one of the second conductivity type transistors.

Abstract: A memory device is connected through an interface to a memory controller. The memory device's reference voltage is set based on a driver's impedance of the memory device and the controller driver drive strength during driver training. The voltage is applied to a reference resistor pair at the memory device and changed until the voltage level switches. The voltage is then set at the reference resistor pair of the memory device.

Abstract: An fusing apparatus for correcting process variation is provided. The fusing apparatus for correcting the process variation of the semiconductor device includes a fusing part including a fusing resistor fused by a current penetrating; a current driving transistor for fusing the fusing resistor by driving a fusing current according to a fusing enable signal applied; a current path part for building a current path by connecting to the fusing part, and controlling a first node voltage according to a fusing state of the fusing resistor; and a latch part for latching a second node signal inversely amplified from the first node voltage, and outputting the latch value when a power-on reset part operates in a normal mode. Using the fusing cell, the test time can be reduced and the current consumption can be greatly decreased in the fusing process.

Abstract: The invention relates to a CMOS input circuit for receiving low-swing input signals, which is an alternative to the CMOS input circuits as known from the prior art.

Abstract: Method and apparatus are provided for buffering a data signal to a low voltage logic device. A circuit for buffering the data signal to the low voltage logic device includes an output buffer and an N-type transistor. The output buffer has an input and an output, where the input is configured to receive the data signal. The output buffer is configured to produce an output signal based on the data signal, and the output signal has a maximum potential. The N-type transistor has a source coupled to the output, a drain configured to couple to the low voltage logic device, and a gate configured to receive a bias potential, where the bias potential is greater than the maximum potential.

Abstract: A semiconductor device according to the present invention comprises a first semiconductor integrated circuit 11 having a predetermined function, the first semiconductor integrated circuit outputting a required output signal, a second semiconductor integrated circuit 12 in which a plurality of MOS elements (PMOS transistor or NMOS transistor) for independently switching to and from a conducted state and a non-conducted state in accordance with a plurality of gate signals each having a different timing is provided and the plurality of MOS elements is connected in parallel to an output or an input of the first semiconductor integrated circuit, and a pulse generating circuit 13 for generating and outputting the plurality of gate signals ?i (i=1, 2, 3) each having a different timing with respect to the plurality of MOS elements in the second semiconductor integrated circuit.

Abstract: Apparatus and methods advantageously maintain transistors of open-drain differential pairs biased in the saturation region when “active,” rather in than the triode or linear region. The biasing techniques are effective over a broad range of process, voltage, and temperature (PVT) variations. By controlling a high voltage level used to drive the gate of a transistor of the differential pair, the biasing of the transistor in the saturation region is maintained. In one embodiment, the low voltage level used to cut off the transistor of the differential pair is also controlled. These techniques advantageously permit differential drivers to exhibit relatively large output swings, relatively high edge rates, relatively high return loss, and relatively good efficiency.

Abstract: Embodiments provide input/output devices having programmable logic that is programmable to operate input/output devices in one of two drive modes. In various embodiments, to operate an input/output device in a first drive mode, logic circuitry is programmable to couple a reference voltage to a gate of a transistor element of an output driver. In various embodiments, to operate an input/output device in a second drive mode, the logic circuitry is programmable to couple a bias voltage to the gate of the transistor element of the output driver. In various embodiments, the logic circuitry may also be programmable to couple one of a plurality of data inputs to the output driver to operate an input/output device in either a single-ended mode or a differential mode.

Abstract: In one embodiment, a receiver circuit is provide that may receive either a differential input or a single-ended input corresponding to an interface. The receiver circuit may include at least two current sources to control a gain of an amplification stage in the receiver. If the receiver circuit is receiving a differential input, one of the current sources may be used. If the receiver circuit is receiving a single-ended input, both of the current sources may be used. A larger gain may thus be provided for the single-ended input as compared to the differential input.

Abstract: An impedance matching circuit has a number of buffers each having a variable impedance circuit. A variable impedance sense control block has an impedance code as an output. A sequencing circuit couples the impedance code of the variable impedance sense control block to the variable impedance circuit of each of the buffers.

Abstract: A complementary high voltage switched current source circuit has a complementary current source pair, wherein a first of the current source pair is coupled to a positive voltage rail and a second of the current source pair is coupled to a negative voltage rail. A digital logic-level control interface circuit is coupled to the complementary current source pair and to the positive voltage rail and the negative voltage rail. A pair of high voltage switches is coupled to the complementary current source pair and the digital logic-level control interface circuit and controlled by the digital control interface circuit.

Abstract: A semiconductor device according to the present invention includes: a first internal terminal; a second internal terminal; a first switching circuit coupled to the second internal terminal to switch between a state in which the second internal terminal is electrically coupled to a first reference electric potential and a state in which the second internal terminal is not electrically coupled to the first reference electric potential; a second switching circuit coupled to the second internal terminal to switch between a state in which the second internal terminal is electrically coupled to a second reference electric potential and a state in which the second internal terminal is not electrically coupled to the second reference electric potential; and a comparator coupled to the first internal terminal and the second internal terminal to compare an electric potential of the first internal terminal with an electric potential of the second internal terminal, in which the first switching circuit and the second swi

Abstract: A pad driving circuit includes an output control circuit, a voltage pump circuit, a first buffer series, and a second buffer series. The output control circuit controls whether a pad circuit can pass an input signal, in which the output control circuit enables the pad circuit to output the input signal when an enable signal is asserted. The voltage pump circuit generates a negative supply voltage having voltage less than a zero volt. The first buffer series, electrically connected between the output control circuit and the pad circuit, drives the pad circuit with a positive supply voltage and the negative supply voltage from the voltage pump circuit. The second buffer series drives the pad circuit with a ground voltage and the positive supply voltage.

Abstract: Low power high-speed output driver. An array of switches (some of which are inverting switches whose connectivity is governed oppositely as the control signal provided to it) is implemented such that an input signal governs the connectivity of those switches. A resistor is coupled between the nodes interposed between the switches of the array, and an output signal is taken from the nodes at ends of the resistor. The high voltage level of such an output driver is truly the level of the power supply energizing the circuit (e.g., VDD) while still consuming relatively low power.

Abstract: A driving circuit includes at least a driving unit. The driving circuit includes a first bias component, a second bias component, and four metal-oxide-semiconductor (MOS) transistors. The first bias component has a first node coupled to a first reference voltage and a second node for outputting a first bias current. The second bias component has a first node for draining a second bias current and a second node coupled to a second reference voltage different from the first reference voltage. Each of the MOS transistors has a control node for receiving one of input signal pairs, a node coupled to one of the bias components and another node coupled to one of the output ports of the driving circuit. The four MOS transistors are of a same conductive type.

Abstract: An output driver of a semiconductor device includes driving transistors and a body bias providing unit. The driving transistors are coupled in parallel and configured to drive an output terminal. The body bias providing unit is configured to supply the driving transistors with respective body biases of at least two levels.