Abstract: A data sense amplifier may include: first and second external nodes, wherein a potential difference occurs between the first and second external nodes when a memory cell is selected; an amplification unit suitable for generating and amplifying a potential difference between first and second nodes in response to the potential difference between the first and second external nodes; and a switching unit suitable for electrically coupling the first and second external nodes to the first and second nodes, respectively, after a predetermined time elapses from when the memory cell is selected.

Abstract: An apparatus used in a self-referenced read of a memory bit cell includes circuitry including a plurality of transistors that includes an NMOS-follower transistor for applying a read voltage to a first end of the bit cell. An offset current is applied by an offset current transistor. A transmission gate allows for isolation of a capacitor used to store a sample voltage corresponding to the read voltage applied across the memory bit cell.

Abstract: A memory includes a memory cell that operates in response to an array supply voltage, and a corresponding pair of bit lines that are pre-charged to a periphery supply voltage prior to each access of the memory cell. A sense amplifier coupled to the bit lines operates in response to the periphery supply voltage. The periphery supply voltage is less than the array supply voltage to enable power savings within the memory. A first pair of transistors is configured to couple the sense amplifier to the bit lines during write accesses to the memory cell, thereby boosting the write voltages applied to the bit lines during a write operation. That is, the first pair of transistors is configured such that the sense amplifier pulls one of the bit lines toward the periphery supply voltage (and the other one of the bit lines toward the ground supply voltage) during write accesses.

Abstract: A monitor circuit for monitoring a CUT (Circuit Under Test) is provided. The monitor circuit includes a power switch and a current meter. The power switch is coupled between a supply voltage and the CUT. The current meter is coupled in parallel with the power switch. The current meter is configured to detect a current through the CUT.

Abstract: Apparatus and methods for operating a read-only memory (ROM) are disclosed. The method for operating the ROM includes sensing a dummy bit line with a dummy sense amplifier coupled to the dummy bit line to generate a keeper adjust signal. Based on the keeper adjust signal, a keeper strength of a keeper circuit coupled to a sense amplifier circuit is adjusted. The sense amplifier circuit is capable of sensing data stored in the ROM.

Abstract: Provided are, among others, memory circuits or devices and their applications in electronic devices or systems and various implementations of an electronic device which includes a semiconductor memory unit including one or more column, a data line, and a data line bar connected with a column selected among the one or more columns. Each of the one or more columns may include a plurality of storage cells each configured to store 1-bit data, each storage cell including a first and a second variable resistance elements; a bit line connected to one end of the first variable resistance element; a bit line bar connected to one end of the second variable resistance element; a source line connected to the other ends of the first and second variable resistance elements; and a driving block configured to latch data of the data line and the data line bar.

Abstract: Systems, apparatuses, and methods for tracking a retention voltage are disclosed. In one embodiment, a circuit is utilized for generating a standby voltage for a static random-access memory (SRAM) array. The circuit tracks the leakage current of the bitcells of the SRAM array as the leakage current varies over temperature. The circuit mirrors this leakage current and tracks the higher threshold voltage of a p-channel transistor or an n-channel transistor, with the p-channel and n-channel transistors matching the transistors in the bitcells of the SRAM array. The circuit includes a voltage regulator to supply power to the SRAM array at a supply voltage proportional to the higher threshold voltage tracked. Setting a supply voltage of the SRAM array based on threshold voltages and leakage current may reduce power consumption as compared to using a supply voltage based on a worst case operating conditions assumption for the SRAM array.

Abstract: A light-emitting-diode-driving device includes a control circuit that is configured to perform constant current control with a DC-DC converter so that a value of a current detected by a current detection unit agrees with a prescribed reference current value to be supplied to a light source. The control circuit includes a reference-current-instruction unit, a threshold-voltage-setting unit, and a comparator circuit. The reference-current-instruction unit is configured to set the prescribed reference current value. The threshold-voltage-setting unit is configured to set a threshold voltage for determining a short circuit failure in the light source. The comparator circuit is configured to compare, with the threshold voltage, a value of a voltage that is detected by a voltage detection unit. The control circuit is configured to make the threshold-voltage-setting unit reduce the threshold voltage, when the reference-current-instruction unit reduces the prescribed reference current value.

Abstract: Embodiments are provided that include a method including providing a first voltage to a memory cell prior to an operation, wherein a magnitude of the first voltage is approximately 5 volts. The method further includes providing a second voltage to the memory cell during the operation, wherein a magnitude of the second voltage is in the range of approximately 1.0 and 1.5 volts. The method also includes determining a state of the memory cell after providing the first voltage and the second voltage.

Abstract: A non-volatile memory is described that includes a sense amplifier that maintains a bit line voltage and output of the sense amplifier at a substantially constant voltage during read operations. During a preset phase, an output of the sense amplifier that is coupled to a selected bit line is grounded. At least one capacitor is precharged during the preset phase. During a sense phase, the sense amplifier output is disconnected from ground while the memory array is biased for reading a selected memory cell. A resulting cell current is integrated by the at least one capacitor. The integrated cell current discharges a sense node from the precharge level to an accurate voltage level based on the resulting cell current.

Abstract: A sensing circuit senses a sensing voltage of a resistive memory cell and outputs a resultant value in response to the sensing voltage which is indicative for the actual cell state. A settling circuit includes a plurality of current mirrors for settling the sensing voltage to a certain target voltage representing one of M programmable cell states. A prebiasing circuit is provided for prebiasing a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage. A resistance circuit includes a plurality of resistors connected in series and coupled in parallel to the resistive memory cell. The resistance circuit is configured to reduce an effective resistance seen by the prebiasing circuit. The settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs switchable to define a linear range detection currents corresponding to the certain target voltages.

Abstract: Peak detecting cascode for breakdown protection. In some embodiments, a power amplifier can include an amplifying transistor configured to amplify a radio-frequency (RF) signal, and a bias circuit coupled to a bias node of the amplifying transistor and configured to yield a bias voltage at the bias node. The power amplifier can further include a bias adjustment circuit that couples an output node of the amplifying transistor and the bias circuit. The bias adjustment circuit can be configured to adjust the bias voltage in response to a potential difference between the output node and the bias node exceeding a threshold value.

Abstract: A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.

Abstract: A method and device for input offset cancellation utilizing a latched comparator that is configurable as a linear amplifier capable of sampling and cancelling offset in the inputs to the latched comparator. The latched comparator is configured according to three control signals for operation in three operating intervals. During a first operating interval, the latched comparator is configured as a linear amplifier that samples the offset at the inputs to the latched comparator. Based on the sampled offset, the linear amplifier cancels the offset in the inputs to the latched comparator. During a second operating interval, the latched comparator is configured to operate as comparator and the inputs to the latch are reset. During a third interval, the latch resolves the inputs to the comparator and generates an output signal indicating the relative values of the inputs.

Abstract: A circuit detects values stored in bit cells of a memory circuit, for example, a memory circuit with single ended sensing. The circuit injects a charge into a bit line coupled to a bit cell to detect the value stored in the bit cell. A level detector detects the voltage level of the bitline as the charge in injected in the bitline. The sensing circuit determines the bit value stored during the charge injection phase. If the bitline voltage reaches above a high threshold voltage level as the charge in injected in the bitline, the circuit determines that the bit cell stores a first bit value (for example, bit value 1.) If the bitline voltage stays below a low threshold voltage level as the charge in injected in the bitline, the circuit determines that the bit cell stores a second bit value (for example, bit value 0).

Abstract: A current sense amplifier comprises a reference current input terminal, a control line input terminal, a sense current input terminal, an output terminal, a first NAND gate, a transmission gate, and two cross coupled inverters each comprising a n-FET. The first NAND gate comprises an output terminal being coupled to the output terminal of the amplifier. The transmission gate comprises two transmission terminals and a gate terminal. The gate terminal is coupled to the control line terminal. Sources of the n-FETs are coupled to the sense current input terminal and the reference current input terminal, respectively. One of the transmission terminals is coupled to an input terminal of one of the inverters and the other transmission terminal is coupled to an input terminal of the other inverter. The input terminals of the first NAND gate are coupled to the control line terminal and one of the input terminals of the inverters, respectively.

Abstract: This application relates to a lighting system comprising a plurality of light emitting diode, LED, circuits, and a power source for providing a drive voltage to the plurality of LED circuits. For each LED circuit, the lighting system comprises a first variable resistance element connected between the respective LED circuit and ground, and a first feedback circuit configured to control a voltage at a first node between the respective LED circuit and the respective first variable resistance element to a first voltage. The lighting system further comprises a current source and a second variable resistance element connected between the current source and ground, wherein each first variable resistance element is configured to attain a resistance value depending on a resistance value attained by the second variable resistance element.

Abstract: The present invention provides a self-timed differential amplifier, including an amplifier unit, having a pair of read/write terminals, wherein data is read or written by a select line; a pair of precharge transistors, controlled by a control line; and a pair of cross-coupled transistors, controlled by a column select line. Moreover, a complementary differential amplifier is formed by the combination of the pair of precharge transistors and the pair of cross-coupled transistors. The pair of the precharge transistors and the pair of cross-coupled transistors are connected to the pair of read/write terminals of the amplifier unit.

Abstract: Tri-level-cell dynamic random access memory (DRAM) stores 3 levels of voltage (0, VDD/2, VDD) into a plurality of memory cells. Selected memory cell connected to bitline (BLT) to develop signal voltage, and adjacent reference bitline (BLR) develops reference voltage at VDD/2. An asymmetrical sensing amplifier (ASA), which has alternative positive offset and negative offset, is used to sense signal voltage and reference voltage for both their difference and sameness. ASA control signals, A and B, switch at different timing points or at different voltage level or the combination of both to have offset voltage set at either positive or negative polarity. Two consecutive read out from one ASA or one single read out from two ASA can be implemented to read memory cells data to local IOs. Output from ASA will be used to restore voltage back to the accessed memory cells.

Abstract: Electronic design automation (EDA) technologies are disclosed that analyze a circuit design for candidate low-voltage swing (LVS) modifications, report the impact of the candidate LVS modifications on circuit characteristics (such as area, timing and energy) and implement selected LVS modifications based on their impact on the circuit characteristics. Candidate LVS modifications comprise replacing existing standard low-voltage swing drivers and receivers, or inserting low-voltage swing drivers and receivers.

Abstract: The disclosed embodiments provide a sense amplifier for a dynamic random-access memory (DRAM). This sense amplifier includes a bit line to be coupled to a cell to be sensed in the DRAM, and a complement bit line which carries a complement of a signal on the bit line. The sense amplifier also includes a p-type field-effect transistor (PFET) pair comprising cross-coupled PFETs that selectively couple either the bit line or the complement bit line to a high bit-line voltage. The sense amplifier additionally includes an n-type field effect transistor (NFET) pair comprising cross-coupled NFETs that selectively couple either the bit line or the complement bit line to ground. This NFET pair is lightly doped to provide a low threshold-voltage mismatch between NFETs in the NFET pair. In one variation, the gate material for the NFETs is selected to have a work function that compensates for a negative threshold voltage in the NFETs which results from the light substrate doping.

Abstract: The present invention provides a data reading device capable of preventing erroneous writing during an operation of reading data from a non-volatile memory element. The data reading device includes a dummy reading circuit provided with a non-volatile memory element, the writing voltage of which is lower than that of a non-volatile memory element of a data reading circuit, and a state detection circuit that detects a written state of the non-volatile memory element of the dummy reading circuit. Upon detection of erroneous writing to the non-volatile memory element of the dummy reading circuit during a data reading operation, the data reading operation is immediately terminated.

Abstract: A read circuit for a memory cell may include an integrated logic circuit for sensing a current change. The integrated logic sensing circuit may be an offset cancelling single ended integrated logic sensing circuit. The circuit may include an offset canceling single ended sensing circuit coupled to a supply voltage, an offset canceling single ended sense amplifier circuit having a sense amplifier input coupled to the offset canceling single ended sensing circuit and a sense amplifier output, and a cell array coupled to a sensing circuit output and a ground.

Abstract: A sense amplifier may include an amplifying section configured to amplify data of a segment line pair when an enable signal is activated and output amplified data to a local line pair, and including latches electrically coupled in a cross-coupled type. The sense amplifier may include a switching section configured to selectively electrically couple the segment line pair and the local line pair in response to an input/output switch signal.

Abstract: A memory device includes a memory array comprising memory cells, sense amplifiers configured to sense data stored in the memory cells of the memory array, and control circuitry configured to generate a plurality of separate sense amplifier control signals for application to respective control inputs of respective ones of the sense amplifiers. For example, the memory device may comprise a row of dummy memory cells each coupled to a dummy wordline. In such an arrangement, the control circuitry may comprise a plurality of logic gates coupled to respective ones of the dummy memory cells, with each such logic gate configured to generate a corresponding one of the separate sense amplifier control signals for a corresponding one of the sense amplifiers as a function of a data transition at a bitline of the corresponding dummy memory cell. The separate sense amplifier control signals may comprise respective sense amplifier enable signals.

Abstract: An apparatus is provided, comprising a single-ended input stage with signals IN_P & IN_N as input and OUT_P & OUT_N as output, wherein the differential input controlled by transistors P1-3 and N1-N3; and a means for weighting (sizing) of transistor (P1 & P3) relative to P2 and (N1 & N3) relative to N2 defines the optimal operation mode.

Abstract: Among other things, one or more techniques and/or systems are described for counting detection events on a detector cell of a photon counting detector array. An electronics arrangement of the detector cell comprises a digital discriminator which is configured according to an impulse response of the detector cell or, more particularly, an impulse response of a radiation detection element of the detector cell (e.g., where the radiation detection element is configured to convert energy of the radiation photon into electrical charge). The digital discriminator is configured to analyze a digital representation of a voltage signal of the detector cell and to compare a result of the analysis to one or more metrics derived based upon the impulse response of the detector cell to identify voltage pulses of the voltage signal that are indicative of detection events.

Abstract: Methods of operating a memory include selectively discharging a data line through a memory cell selected for sensing, discharging a sense node to the data line while a voltage level of the sense node is greater than a voltage level of the data line, and inhibiting discharging of the data line to the sense node while the voltage level of the data line is greater than the voltage level of the sense node. Sense circuits include a path between an input node and a sense node facilitating current flow from the sense node to the input node when a voltage level of the sense node is greater than a voltage level of the input node and inhibiting current flow from the input node to the sense node when the voltage level of the sense node is less than the voltage level of the input node.

Abstract: Systems and methods for reducing the power consumption of memory devices. A method of operating a memory device may include monitoring a plurality of sense amplifiers, each sense amplifier configured to evaluate a logic value stored in a memory cell, determining whether each of the plurality of sense amplifiers has completed its evaluation, and stopping a reference current from being provided to the sense amplifiers in response to all of the sense amplifiers having completed their evaluations. An electronic circuit may include memory cells, sense amplifiers coupled to the memory cells, transition detection circuits coupled to the sense amplifiers, and control circuitry coupled to the transition detection circuits, the transition detection circuits configured to stop a reference current from being provided to the sense amplifiers if each transition detection circuit determines that its respective sense amplifier has identified a logic value stored in a respective memory cell.

Abstract: An imaging system (100) includes a direct conversion detector pixel (111) that detects radiation traversing an examination region and generates an electrical signal indicative thereof, wherein the signal includes a persistent current, which is produced by a direct conversion material of the pixel and which shifts a level of the signal. A persistent current estimator (116) estimates the persistent current and generates a compensation signal based on the estimate. A pre-amplifier (112) receives the signal and the compensation signal, wherein the compensation signal substantially cancels the persistent current, producing a persistent current compensated signal, and that amplifies the compensated signal, generating an amplified compensated signal. A shaper (114) generates a pulse indicative of energy of the radiation illuminating the direct conversion material based on the amplified compensated signal.

Abstract: A single-ended input sense amplifier uses a pass device to couple the input local bit-line to a global bit-line evaluation node. The sense amplifier also includes a pair of cross-coupled inverters, a first inverter of which has an input that coupled directly to the global bit-line evaluation node. The output of the second inverter is selectively coupled to the global bit-line evaluation node in response to a control signal, so that when the pass device is active, the local bit line charges or discharges the global bit-line evaluation node without being affected substantially by a state of the output of the second inverter. When the control signal is in the other state, the cross-coupled inverter forms a latch. An internal output control circuit of the second inverter interrupts the feedback provided by the second inverter in response to the control signal.

Abstract: A device includes a first switch configured to control a connection between a first voltage node and a capacitor, and a second switch configured to control a connection between a common charge node and the capacitor. The device further includes a plurality of bit-lines, and a plurality of bit-line charge switches, each configured to control a connection between a respective one of the plurality of bit-lines and the common charge node.

Abstract: Exemplary embodiments of the present invention disclose a method and system for asserting a voltage transition from a low voltage to a high voltage with a voltage difference between the low and high voltages on a word line with a word line driver logic that is composed of thin-oxide MOS transistors, wherein the thin-oxide MOS transistors experience less than the voltage difference on the word line between any two of a source, a drain, and a gate. In a step, charging the word line from the low voltage to an intermediate voltage level. In another step, charging the word line to the high voltage from the intermediate voltage level.

Abstract: Integrated circuits having analog-to-digital converters are provided. Analog-to-digital converters may contain latched comparators. A latched comparator may include inputs configured to receive a differential input voltage signal, a differential reference voltage signal, and a clock signal. The comparator may include a preamplifier, a latching circuit, a level shifter, and a flip-flop coupled in series. The preamplifier may include large input transistors for minimizing offset, stacked tail transistors, and diode-connected load transistors for minimizing kickback noise. The preamplifier may be used to generate amplified voltage signals. The latching circuit may include a first pair of cross-coupled pull-down transistors, a second pair of cross-coupled pull-up transistors, and precharge transistors.

Abstract: A digital cell for performing a logic operation on a logic input to produce a logic output, includes an evaluation block and a sense-amplifier block, both configured to receive input signals representative of the logic input, and to detect when the logic input and/or input signals validly encode at least one bit. The digital cell is configured to alternate between an evaluate state and a reset state. Upon the digital cell being in the reset state and the detection, the digital cell is switched from the reset state to the evaluate state in which the evaluation block generates a difference in its output signals, and the sense-amplifier block amplifies the difference so that the output signals encode at least one valid bit. Upon the digital cell being in the evaluate state, the digital cell can be triggered to reset to the reset state.

Abstract: A circuit and method for dynamically changing trip point voltage in a sensing inverter circuit. In one embodiment, the sensing inverter circuit includes: (1) a base inverter circuit couplable to logic-high and logic-low voltage sources at respective inputs thereof and configured to transition an output thereof from a previous logic-level voltage to a present logic-level voltage based on a logic value of an input voltage received by the base inverter circuit, and (2) a feedback circuit associated with the base inverter circuit and configured to employ the previous logic-level voltage to decouple one of the logic-high and logic-low voltage sources from one of the inputs and thereby shift a trip voltage of the base inverter circuit toward the input voltage.

Abstract: A circuit comprises a control line and a two terminal semiconductor device having a first terminal is coupled to a signal line, and a second terminal coupled to the control line. The semiconductor device has a capacitance when a voltage on the first terminal is above a threshold and has a smaller capacitance when a voltage on the first terminal is below the threshold. A signal is placed on the signal line and a voltage on the control line is modified. When the signal falls below the threshold, the semiconductor device acts as a very small capacitor and the output will be a small value. When the signal is above the threshold, the semiconductor device acts as a large capacitor and the output will be influenced by the signal and the modified voltage on the control line and the signal is amplified.

Abstract: In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.

Abstract: A sensing amplifier using capacitive coupling and a dynamic reference voltage, where the sensing amplifier circuit includes a bit line, configured to receive charging and discharging signals; a sensing amplifier, connected to the bit line and configured to receive the bit line and a reference voltage for comparison and configured to enlarge the voltage difference between a high point and a low point; and a reference voltage generator, connected to the sensing amplifier to generate the reference voltage required for the sensing amplifier to compare. The sensing amplifier effectively enhances sensing margin of the sensing amplifier circuit; and in addition, to accelerate the access speed, the sensing amplifier can easily determine the correct stored data and further quickly solve the problems of high-speed storing the data by the storage units.

Abstract: A control signal generation circuit includes a voltage detection unit which detects a level of an external voltage and generates first and second detection signals and a control signal control unit which delays a sense amplifier enable signal in response to the first and second detection signals and generates first through third control signals. The enable period of the first and second control signals are controlled based on the levels of the first and second detection signals.

Abstract: An error amplification circuit includes an integrated circuit and a phase compensation capacitor. The integrated circuit includes an error amplifier to amplify a difference between a predetermined reference voltage and an input feedback voltage for output; a current generator circuit to generate a bias current for supply to the error amplifier; a phase compensation resistor; a bias-current control terminal; and a phase compensation terminal connected to an output terminal of the error amplifier via the phase compensation resistor. The phase compensation capacitor is connected to the phase compensation terminal, the phase compensation capacitor being provided outside the integrated circuit.

Abstract: A circuit and method for long term electrocardiogram (ECG) monitoring is implemented with the goal of reducing power consumption, battery size, and consequently device size. In one embodiment, the integrated circuit includes an amplifier cell having a plurality of input terminals and an output terminal; a QRS amplifier cell in communication with the output of the amplifier cell; a baseline amplifier cell in communication with the output of the amplifier cell; a comparator cell having a first input terminal in communication with the output terminal of the QRS amplifier cell; and a VDC cell having an input in communication with the output of the baseline amplifier cell and an output in communication with the second input terminal of the comparator cell, wherein the comparator cell generates an output pulse in response to the output signal from the amplifier cell and the output signal from the baseline amplifier cell.

Abstract: In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.

Abstract: Embodiments of the present technology are directed toward circuits for gating pre-charging sense nodes within a flip-flop when an input data signal changes and a clock signal is in a given state. Embodiments of the present technology are further directed toward circuits for maintaining a state of the sense nodes.

Abstract: Embodiments of delay lines may include a plurality of delay stages coupled to each other in series from a first stage to a last stage. Each delay stage may include an input transistor receiving a signal being delayed by the delay line. The delay line may include a compensating circuit configured to compensate for a change in a transconductance of the input transistor resulting from various factors. One such compensating circuit may be configured to provide a bias signal at an output node having a magnitude that is a function of a transconductance of a transistor in the compensating circuit. The bias signal may be used by each of the delay stages to maintain the gain of the respective delay stage substantially constant, such as a gain of substantially unity, despite changes in a transconductance of the respective input transistor in each of the delay stages.

Abstract: An auto-mute control circuit is disclosed. The auto-mute control circuit includes an analog amplifier, a detecting circuit and a direct-current (DC) level adjusting circuit. The analog amplifier receives an input signal and outputs a sensing voltage signal accordingly. The detecting circuit compares a common-mode voltage received with the sensing voltage signal received and outputs a comparison signal accordingly. The DC adjusting circuit receives the comparison signal and outputs an Up-Down digital signal, a fine tune digital signal and a rough tune digital signal, so that a sensing DC level is equal to the common-mode voltage.

Abstract: Memories, current mode sense amplifiers, and methods for operating the same are disclosed, including a current mode sense amplifier including cross-coupled p-channel transistors and a load circuit coupled to the cross-coupled p-channel transistors. The load circuit is configured to provide a resistance to control at least in part the loop gain of the current mode sense amplifier, the load circuit including at least passive resistance.

Abstract: An amplifying circuit comprises a bias circuit, a reference circuit, a first circuit, and an amplifying sub-circuit. The bias circuit is configured to provide a bias current. The reference circuit is configured to provide a first differential input based on a reference resistive device and a reference current derived from the bias current. The first circuit is configured to provide a second differential input based on a first current and a first resistance. The amplifying sub-circuit is configured to receive the first differential input and the second differential input and to generate a sense amplifying output indicative of a resistance relationship between the first resistance and a resistance of the reference resistive device.

Abstract: A high voltage tolerant differential receiver circuit includes a voltage divider ladder that is operative to divide in half differential input signals that are greater than threshold voltages of the voltage divider ladder. A pass gate circuit is operative to receive differential input signals that are below the threshold voltage of the voltage divider ladder. Outputs from the voltage divider ladder and the pass gate circuit are provided to separate comparators. Output from the comparators are combined to generate a signal in the voltage domain of receiver circuitry.

Abstract: A semiconductor device includes a first driver circuit for supplying a first potential to a first power supply node of the sense amplifier, second and third driver circuits for supplying a second potential and a third potential to a second power supply node of the sense amplifier, and a timing control circuit for controlling operations of the first to third driver circuits. The timing control circuit includes a delay circuit for deciding an ON period of the third driver circuit. The delay circuit includes a first delay circuit having a delay amount that depends on an external power supply potential and a second delay circuit having a delay amount that does not depend on the external power supply potential, and the ON period of the third driver circuit is decided based on a sum of the delay amounts of the first and second delay circuits.