Abstract: A semiconductor circuit includes a voltage regulator and a buffer transistor. The voltage regulator converts an input voltage input to an input terminal thereof into an output voltage output to an output terminal thereof. The buffer transistor is an n-channel depletion-mode metal-oxide semiconductor field effect transistor, disposed between the power supply terminal and the voltage regulator with a gate terminal thereof connected to the power supply terminal, a drain terminal thereof connected to the power supply terminal, and a source terminal thereof connected to the input terminal of the voltage regulator.

Abstract: The present invention provides a high-side signal sensing circuit. The high-side signal sensing circuit comprises a signal-to-current converter, a second transistor and a resistor. The signal-to-current converter has a first transistor generating a mirror current in response to an input signal. The second transistor cascaded with the first transistor is coupled to receive the mirror current. The resistor generates an output signal in response to the mirror current. Wherein, the level of the output signal is corrected to the level of the input signal.

Abstract: A current source generates a reference current. A first transistor is a depletion-type MOSFET arranged such that one terminal thereof is connected to the current source and its gate is connected to its source. A second transistor is an enhancement-type MOSFET arranged such that one terminal thereof is connected to the other terminal of the first transistor, the other terminal thereof is connected to a fixed voltage terminal, and its gate and drain are connected. A third MOSFET is an enhancement-type P-channel MOSFET arranged such that one terminal thereof is connected to the current source, the other terminal thereof is connected to the fixed voltage terminal, and its gate is connected to a connection node connecting the first and second transistors. A constant voltage circuit outputs at least a voltage that corresponds to the gate voltage of the third transistor or a voltage that corresponds to the gate voltage thereof.

Abstract: An internal voltage generating circuit includes a drive signal generating unit, a drive signal controlling unit, and a driving unit. The drive signal generating unit is configured to compare an internal voltage with first and second reference voltages and generate a first pull-up drive signal and a first pull-down drive signal. The drive signal controlling unit is configured to buffer the first pull-up drive signal and the first pull-down drive signal and generate a second pull-up drive signal and a second pull-down drive signal, wherein the second pull-up drive signal and the second pull-down drive signal are deactivated when the first pull-up drive signal and the first pull-down drive signal are activated. The driving unit is configured to drive the internal voltage in response to the second pull-up drive signal and the second pull-down drive signal.

Abstract: IO buffers that operate with an IO power supply system and cut cells that isolate the IO buffers from each other are disposed on the periphery of an always-on power supply area and a power supply cut-off available area. A signal indicating the holding of an IO output(s) output from the always-on power supply area is wired so as to go round the IO buffers and the cut cells. The cut cell includes a level shifter that operates with an IO power supply system. The cut cell shifts the level of signal indicating the holding of IO output so that the signal level conforms to the power supply system of IO buffers, and outputs the resultant signal to the IO buffers.

Abstract: A reference voltage circuit includes a first amplifier, a first load device and a first PN junction device, second and third load devices and a second PN junction device, an offset voltage reduction circuit, a coupling node potential takeout circuit, and an area adjustment circuit. The offset voltage reduction circuit is configured to reduce an offset voltage between the first and second input terminals at the first amplifier, and the coupling node potential takeout circuit is configured to take out potentials of the first and second coupling nodes. The area adjustment circuit is configured to adjust an area of the second PN junction device in accordance with the potentials of the first and second coupling nodes which are taken out by the coupling node potential takeout circuit.

Abstract: Examples of analog delay lines and analog delay systems, such as DLLs incorporating analog delay lines are described, as are circuits and methods for adaptive biasing. Embodiments of adaptive biasing are described and may generate a bias signal for an analog delay line during start-up. The bias signal may be based in part on the frequency of operation of the analog delay line.

Abstract: An internal voltage generating circuit and a semiconductor memory device including the internal voltage generating circuit are disclosed. The internal voltage generating circuit includes a first voltage generating circuit, a second voltage generating circuit, and a third voltage generating circuit. The first voltage generating circuit stabilizes a first external supply voltage to generate a first internal voltage. The second voltage generating circuit stabilizes the first external supply voltage and a second external supply voltage to generate a second internal voltage having a voltage level higher than the first internal voltage. The third voltage generating circuit stabilizes the second internal voltage to generate a third internal voltage having a voltage level lower than the second internal voltage. Accordingly, the semiconductor memory device may be insensitive to a change in an external supply voltage and have small power consumption.

Abstract: A power supply device includes: an inverter that converts a DC power supplied from a battery pack into an AC power and outputs the AC power; and an adapter shapes a waveform of the AC power outputted from the inverter.

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract: This document discusses, among other things, a voltage regulator having a plurality of switching devices, coupled in parallel, and configured to selectively provide a variable available drive current using a comparison of a regulated Dc output voltage to at least one reference voltage.

Abstract: A reference voltage generating circuit that accurately corrects temperature characteristics of a BGR (bandgap reference) circuit and a regulator. A voltage dividing circuit outputs first and second voltages obtained by dividing a BGR voltage. The regulator includes a differential amplifier, first and second resisters coupled in series between the output terminal of the differential amplifier and the ground. The positive input terminal of the differential amplifier receives the BGR voltage, and the negative input terminal is coupled to a coupled node between third and fourth resistors. The BGR circuit outputs a third voltage varying with a temperature determined by a predetermined amount of current flowing in the BGR circuit and a predetermined resistor. A temperature-characteristics correcting circuit controls a correcting current flowing through the coupled node so that its magnitude varies with the difference between the first and third voltages, and the difference between the second and third voltages.

Abstract: A driver circuit for supplying a drive signal to a mixer circuit comprising a first and second circuit branch and an operational amplifier. The first circuit branch receives an input signal and a bias signal. The second circuit branch receives the input signal. The operational amplifier has a first input connected to a junction node of the first circuit branch and a second input connected to a junction node of the second circuit branch. The operational amplifier is arranged to provide an operational amplifier output signal a second component of the second circuit branch so that a voltage at the junction node of the second circuit branch is equal to a voltage at the junction node of the first circuit branch. The voltage is dependent on the input signal and providing the drive signal.

Abstract: An internal voltage generation circuit includes a comparison signal generation unit configured to compare an internal voltage with first and second reference voltages and generate first and second comparison signals; a transfer unit configured to transfer the first comparison signal as a pull-up signal in response to the second comparison signal, transfer the second comparison signal as a pull-down signal in response to the first comparison signal, transfer a power supply voltage as the pull-up signal when the second comparison signal is enabled and transfer a ground voltage as the pull-down signal when the first comparison signal is enabled; and a driving unit configured to drive a node in response to the pull-up signal and the pull-down signal and generate the internal voltage.

Abstract: A system for providing a power signal of a predetermined voltage to an input of a High Definition Multimedia Interface (HDMI) sink device is provided. The system includes an electronic device, generating HDMI signals transmitted on at least one differential signal line to another input of the HDMI sink device, and a startup circuit, providing the power signal of the predetermined voltage. The startup circuit includes a power harvesting circuit for obtaining an electrical power of a lower voltage, lower than the predetermined voltage, from at least one of the HDMI signals on the another input, and a voltage raiser circuit increasing the lower voltage to the predetermined voltage. A corresponding electronic cable containing the start-up circuit is also provided.

Abstract: A system includes a first circuit, a first charge pump, a second circuit, and a second charge pump. The first circuit has a first power supply terminal coupled to a positive power supply terminal and a second power supply terminal. The first charge pump has an input coupled to positive power supply terminal and an output coupled to the second power supply terminal of the first circuit. The second circuit has a first power supply terminal coupled the second power supply terminal of the first circuit and a second power supply terminal. The second charge pump has an input coupled to the first power supply terminal of the second circuit and an output coupled to the second power supply terminal of the second circuit.

Abstract: The present invention relates to a method for controlling the supply voltage for an integrated circuit, which is connected to a voltage regulation module via a sense line, a voltage supply line and a bus wherein the supply voltage is provided by the voltage regulation module (10) via the voltage supply line. The supply voltage is composed of a reference voltage and a number of additional voltage levels. The reference voltage is defined by a voltage source and controlled by the integrated circuit via the bus, and the number of additional voltage levels is determined by the integrated circuit and send to the voltage regulation module via the sense line. Further the present invention relates to a corresponding apparatus with a voltage regulation module and an integrated circuit.

Abstract: The performance, thermal and power management system is configured to perform DVFS calibration, temperature compensation adjustment, aging calibration, and DC offset calibration in an IC. The initial voltage supplied to the IC may be set to an initial value which takes chip-to-chip process variations into account and then dynamically adjusted according to temperature variations, DC offset and/or aging effects. Therefore, the performance, thermal and power management system may achieve optimized thermal and power performance of the IC.

Abstract: A voltage-stabilizing circuit includes a comparator and an RC circuit. A positive input of the comparator receives an enable signal. A negative input of the comparator receives a reference voltage. The RC circuit includes a first resistor and a capacitor. A first terminal of the capacitor is connected to an output of the comparator, a second terminal of the capacitor is grounded through a first resistor, and the first terminal of the capacitor is further connected to an enable pin of a power integrated circuit.

Abstract: Embodiments are provided that include a memory die, memory devices, and methods, such as those comprising a voltage generator, including an output voltage and an adjustment circuit configured to cause adjustment of the output voltage based on a latch signal. Further one such method includes applying an input voltage to an input of a voltage generator, adjusting the input voltage to an adjusted voltage, comparing the adjusted voltage to a reference voltage, generating trim data based on the comparison and storing the trim data.

Abstract: A multiplexer (MUX) circuit with balanced select line loading is provided. The MUX circuit includes a plurality of 2:1 MUX units coupled together in a multistage cascading arrangement, along with a selection module coupled to the MUX units. The MUX units are arranged in an initial MUX stage, at least one intermediate MUX stage coupled to and following the initial MUX stage, and a final MUX stage coupled to and following the at least one intermediate MUX stage. Each MUX unit is controlled with a respective select bit input value provided by the selection module. The selection module controls the operation of the MUX units in the initial MUX stage with a first plurality of different select bits, controls the operation of the MUX units in the at least one intermediate MUX stage with a second plurality of different select bits, and controls the operation of the final MUX stage with a devoted select bit.

Abstract: An integrated circuit comprising an adjustable voltage source to allow a plurality of voltage values to be selected; means for measuring a voltage value derived from the adjustable voltage source; and means for configuring the adjustable voltage source to provide a selected voltage value, wherein the selected voltage value is selected based upon a voltage value measured by the means for measuring and a voltage selected by a controller.

Abstract: When the conduction state of at least one MOS transistor of a PMOS transistor (P1) and NMOS transistor (N2) is switched to an off state, current which would be applied to the MOS transistor with a conduction state in the off state due to the conduction state becoming the off state is bypassed to a resistor (R3, R4). Due to this, an MOS transistor with a conduction state in the off state being supplied with direct current power as it is can be avoided and the withstand voltage of that MOS transistor does not have to be raised. For this reason, the manufacturing costs of the direct current voltage output circuit (54a) can be kept down. At the same time, the circuit size of the direct current voltage output circuit (54a) can be made smaller.

Abstract: By maintaining a substantially constant total die power during the entire lifetime of sophisticated integrated circuits, the performance degradation may be reduced. Consequently, greatly reduced guard bands for parts classification may be used compared to conventional strategies in which significant performance degradation may occur when the integrated circuits are operated on the basis of a constant supply voltage.

Abstract: A semiconductor apparatus includes a power supply changing unit. The power supply changing unit is configured to receive an enable signal and power supply voltage, generate first voltage or second voltage according to the enable signal, change a voltage level of the second voltage according to a level signal, and supply the first voltage or the second voltage as a driving voltage of an internal circuit, wherein the internal circuit receives a first input signal to output a second input signal.

Abstract: A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V2 from a first voltage V1; and a control circuit that generates the current control signal OVDR, makes a current that is flowed by the current mirror increase by a first transition of the current control signal OVDR, and makes the current that is flowed by the current mirror decrease by a second transition of the current control signal OVDR. The control circuit includes a slew-rate processing unit that makes a second slew rate of the current control signal OVDR related to the second transition be smaller than a first slew rate of the current control signal OVDR related to the first transition.

Abstract: There is provided a charge pump circuit suited for reducing the power consumption. A capacitor 201a, a capacitor 201b, a capacitor 201c, and switching elements 202a to 202k, for electrically connecting or separating capacitors 201a, 201b, and 201c, repeats: a first state where charge supplied from an input power-supply voltage VDD is accumulated in the capacitors 201a and 201b; a second state where the charge accumulated in the capacitor 201a is transferred to the third capacitor 201c, and a positive output power-supply voltage is held by the charge accumulated in the capacitor 201b; a third state where the charge supplied from an input power supply is accumulated in the capacitors 201a and 201b; and a fourth state where the charge accumulated in the capacitor 201b is transferred to the third capacitor 201c, and the positive output power-supply voltage VCC is held by the charge accumulated in the capacitor 201a.

Abstract: A method of protecting a power supply voltage in an integrated circuit is disclosed. The method includes storing charge in a charge reservoir capacitor (142), receiving a power supply sample voltage (140), and receiving a load power supply voltage (VDDL, 102). The power supply sample voltage is compared to the load power supply voltage (150). Charge is added from the charge reservoir capacitor (142) to the load power supply (VDDL) through transistor 126 and capacitor 144 in response to the step of comparing.

Abstract: According to an example embodiment, an apparatus for controlling a power supply voltage for an integrated circuit may be provided, which may include a plurality of different types of process region detection circuits, each process region detection circuit configured to identify a respective process region of a plurality of process regions. The apparatus may also include a voltage selection circuit configured to determine a highest voltage among the voltages associated with the identified process regions and to select a power supply voltage for the integrated circuit that is equal to the highest voltage, one or more functional test circuits configured to perform a functional test using the selected power supply voltage, and a voltage adjuster circuit configured to increase the selected power supply voltage if the functional test fails.

Abstract: A circuit for providing a reference voltage can be widely used in audio applications. However, at startup an abrupt start in the reference signal can cause undesirable audible artifacts. A circuit employing feedback of a reference voltage to control the charging of a capacitor which provides the reference voltage can be used to provide a smooth startup to the reference voltage. The circuit contains a differential pair for steering a fixed current source from one path to another as the reference voltage increases. The steered current can then be mirrored into one ore more current mirrors where the newly mirrored current can be squeezed to zero when the difference between a desired reference voltage and the reference voltage approaches zero. This newly mirrored current can be used to charge a capacitor which is used to provide the reference voltage.

Abstract: An apparatus for precluding the use of extended JTAG operations, including a JTAG control chain, a feature fuse, a level sensor, an access controller, and a blow controller. The JTAG control chain enables/disables the extended JTAG operations. The feature fuse indicates whether the extended JTAG features are to be disabled. The level sensor monitors an external voltage signal, and indicates that the external voltage signal is at a legal level. The access controller determines if the feature fuse is blown, and directs the JTAG control chain to disable the extended JTAG operations if the feature fuse is blown, and directs the JTAG control chain to disable the extended JTAG operations if the external voltage signal is at an illegal level regardless of whether the feature fuse is blown. The blow controller receives a voltage, and blows a selected fuse within a fuse array responsive to a valve of the voltage.

Abstract: A solid state disk (SSD) power supply system includes power supply switching circuit. The power supply switching circuit comprises a first power input to receive a first direct current (DC) voltage signal, a second power input connected to a super capacitor to receive a second DC voltage signal provided by the super capacitor, a switching chip connected to the first and second power inputs and configured to select the second DC voltage signals to output in a situation that the first power input is disabled to receive the first DC voltage signal, a voltage converting chip to receive the voltage signal output from the switching chip, and a voltage output to output an operation voltage to an SSD according to the voltage signal. The switching chip and the voltage converting chip respectively output a first and second test signals for testing a discharging time of the super capacitor.

Abstract: A digital logic controller for regulating a voltage of a SoC includes a first input for receiving a reference signal having a first property that is constant over a range of operating conditions of the SoC, and a second input for receiving a second signal that has a second property that is indicative of an operating condition of the SoC. The second property may vary over a range of operating conditions of the SoC. A comparator compares the first and second properties and the digital logic controller, based on the comparison, outputs to a regulation signal to a voltage regulator to regulate the voltage of the SoC at or near a target voltage that is higher than a minimum operating voltage of the SoC.

Abstract: The semiconductor circuit device includes a power line receiving first voltage; each of internal circuits being provided with different operating voltages by the operation mode; a power supply circuit connected with one of internal circuits and the power line to provide second voltage lower than the first voltage to the one of internal circuits; and a control circuit controlling the power supply circuit in accordance with each of the operation modes, wherein when a change of a operation mode is performed, if a operating voltage after the change of a operation mode is higher than a operating voltage before the change of a operation mode, firstly the control circuit controls the power supply circuit to supply a second voltage higher than the operating voltage and secondly the control circuit controls the power supply circuit to supply the operation voltage after the change of a operation mode to the internal circuit.

Abstract: Disclosed is a DC voltage conversion circuit of a liquid crystal display apparatus, including: a main pumping circuit including a plurality of thin film transistors and configured to output voltage for driving a liquid crystal display apparatus when the plurality of thin film transistors are alternately turned on or off; and a switch control signal generator configured to control voltages applied to gates of the plurality of thin film transistors by inversion of a clock signal, in which each thin film transistor is turned on when positive gate-source voltage is applied thereto, and turned off when negative gate-source voltage is applied thereto.

Abstract: A reference voltage generating circuit includes a first power supply, a second power supply, a first variable resistance circuit having one end connected to the first power supply and configured to be capable of adjusting a resistance value of the first variable resistance circuit, a series resistance circuit having at least one resistance and one end connected to the first variable resistance circuit, a second variable resistance circuit having one end connected to the series resistance circuit and the other end connected to the second power supply, and configured to be capable of adjusting a resistance value of the second variable resistance circuit, a first terminal arranged between the first variable resistance circuit and the series resistance circuit, a second terminal arranged between the series resistance circuit and the second variable resistance circuit, and a voltage selecting circuit configured to select one of a voltage of the first terminal and a voltage of the second terminal, and output the se

Abstract: An apparatus and method are disclosed to combine pad functionality in an integrated circuit. A power, ground, or signal pad is connected to a power, ground, or signal source, respectively. The power, ground, or signal pad is additionally connected to an additional signal source, such as automatic test equipment in a testing environment. By temporarily disconnecting either the power, ground, or signal source, from the functional block within the integrated circuit to which the source is delivered, the same pad may pass in another signal to other portions of the integrated circuit. In the alternative, the same pad may pass in another signal to other portions of the integrated circuit without disconnecting the original signal by coupling the additional signal over the original signal. Further, combining pad functionality enables reuse of an input pad as an output pad for signals originating from within the integrated circuit.

Abstract: A method and an apparatus for controlling voltage level and clock signal frequency supplied to a system.

Abstract: Methods and circuits related to a driving circuit with zero current shutdown are disclosed. In one embodiment, a driving circuit with zero current shutdown can include: a linear regulating circuit that receives an input voltage source, and outputs an output voltage; a start-up circuit having a threshold voltage, the start-up circuit receiving an external enable signal; a first power switch receiving both the output voltage of the linear regulating circuit and the external enable signal, and that generates an internal enable signal, the internal enable signal being configured to drive a logic circuit; when the external enable signal is lower than a threshold voltage, the driving circuit is not effective; when the external enable signal is higher than the threshold voltage, the start-up circuit outputs a first current; and where the output voltage at the first output terminal is generated by the linear regulating circuit based on the first current.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a first circuit, a second circuit, and a signal propagation control circuit. The first circuit is configured to have a first power supply terminal. The second circuit is configured to have a second power supply terminal independent of the first power supply terminal. The signal propagation control circuit is configured to provide a first fixed value to the second circuit for a predetermined period after power is supplied to the second circuit, and after the predetermined period, configured to control whether to transfer an output signal from the first circuit to the second circuit or provide the first fixed value to the second circuit.

Abstract: An integrated circuit comprises a block of components to be power gated and power gating circuitry for selectively isolating the components from the source voltage supply to achieve such power gating. A voltage regulator provides a control voltage to the power gating circuitry when performing power gating operations. The control voltage may be set to any of a plurality of predetermined voltage levels. An adaptive controller receives operating parameter data from either or both of the block of components and the power gating circuitry, that operating parameter data being indicative of leakage current. The adaptive controller issues a feedback signal to the voltage regulator whose value depends on the received operating parameter data. The voltage regulator responds to the feedback signal to change the control voltage between the predetermined voltage levels until the operating parameter data indicates that a desired leakage current is obtained within the power gating circuitry.

Abstract: A semiconductor apparatus for generating an internal voltage includes a control code output block and an internal voltage generation block. The control code output block is configured to output a variable code having a code value corresponding to a voltage level of an internal voltage. The internal voltage generation block is configured to compare the variable code to a setting code and controls the voltage level of the internal voltage according to the comparison.

Abstract: Embodiments of the present invention may provide an integrated circuit that may comprise a first transistor to receive an input voltage signal at its gate and generate an output voltage signal at its drain. Further, the integrated circuit may comprise a second transistor to form an active load of the first transistor, the second transistor may have its drain and gate coupled to the drain of the first transistor. In addition, the integrated circuit may comprise a third transistor to form a current mirror with the second transistor, a fourth transistor to form an active load of the third transistor, and a fifth transistor to form a current mirror with the fourth transistor. The fifth transistor may be connected to the drain of the second transistor. The integrated circuit may form an amplifier and Gm stage of a reference buffer.

Abstract: A circuit for reducing power consumption in input ports of an integrated circuit is disclosed. The circuit comprises a plurality of receiver circuits of the integrated circuit for receiving input signals coupled to the integrated circuit; and a bias current generator coupled to the plurality of receiver circuits, the bias current generator providing a bias voltage for each receiver circuit of the plurality of receiver circuits to mirror the current in the bias current generator in each of the receiver circuits. A method of reducing power consumption in input ports of an integrated circuit is also disclosed.

Abstract: Provided are a voltage divider circuit with high detection precision, a small circuit area, and a reduced chip size, and a semiconductor device including the voltage divider circuit. The voltage divider circuit includes: a first resistor circuit formed to have a resistance that is weighted according to a binary code; a second resistor circuit formed to have a resistance that is weighted according to the same binary code; and a third resistor circuit including a third resistor having a resistance that is weighted according to the same binary code to have a maximum weighted bit count, in which both ends of the third resistor are alternatively connected to an output terminal by two transmission gates.

Abstract: As provided herein, in some embodiments, power consumption and/or chip area is reduced by bias circuits configured to provide bias conditions for more than one active circuit, thereby reducing the number of bias circuits in a design. Shared bias circuits may reduce the aggregate amount of on-chip area utilized by bias circuitry and may also reduce the total power consumption of a chip. Additionally and/or alternatively, bias circuits disclosed herein are configured to provide outputs that are less susceptible to changes in the voltage supply level. In particular, in some embodiments, bias circuits are configured to provide relatively constant bias conditions despite changes in the voltage supply level. In some embodiments, bias circuits are configured to provide bias conditions that compensate for perturbations caused by changes other inputs, in order to stabilize a particular operating point.

Abstract: The present invention provides a semiconductor chip which is insusceptible to noise and whose consumption current is small. In a semiconductor chip, an internal power supply voltage for an internal circuit block is generated by a regulator having small current drive capability and a regulator having large current drive capability. A voltage buffer is provided between a reference voltage generating circuit and the regulator having large current drive capability. In a low-speed operation mode, the voltage buffer and the regulator having large current drive capability are made inactive. Therefore, noise in reference voltage is suppressed, and consumption current can be reduced.

Abstract: A clock generation circuit is provided, having a bandgap reference circuit, a frequency controlled resistor, a comparison circuit and a voltage controlled oscillator. The bandgap reference circuit generates a first voltage. The frequency controlled resistor is coupled to a first node to provide a second voltage. The comparison circuit generates a first current according to a difference between the first voltage and the second voltage. The voltage controlled oscillator outputs first, second and third output clocks according to a third voltage on a second node, wherein the third voltage is generated according to the first current, and the second and third output clocks are fed back to the frequency controlled resistor such that the frequency controlled resistor converts the first current into the second voltage according to the second and third output clocks.

Abstract: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.

Abstract: A power supply apparatus and a method for supplying power are provided. The apparatus, for use in a system having a first power signal, includes an assistance unit and a power supply device. The assistance unit outputs at least one maintaining signal according to the first power signal selectively. The power supply device outputs a second power signal, wherein the power supply device maintains the second power signal according to the at least one maintaining signal, for example, in an inactive state, such as an idle or standby state or other suitable timing.