Base Includes An Inorganic Compound Containing Silicon Or Metal (e.g., Glass, Ceramic, Brick, Etc.) Patents (Class 427/255.11)
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Patent number: 8147969Abstract: The invention relates to a substrate (1) provided with a thin-film multilayer comprising an alternation of n functional layers (3) having reflection properties in the infrared and/or in solar radiation, and (n+1) coatings (2, 5), where n?1, said coatings being composed of a layer or a plurality of layers (2a, 2b, 5a, 5b), characterized in that, in order to preserve the optical and/or mechanical quality of the multilayer in the case in which the substrate (1) provided with said multilayer is subjected to a heat treatment of the toughening, bending or annealing type, at least one of the functional layers (3) includes a blocker coating (4) consisting of: on the one hand, a “protection” layer made of a material capable of helping to protect the functional layer from oxidizing and/or nitriding attack, immediately in contact with said functional layer; and on the other hand, at least one “adhesion” layer made of a material capable of promoting adhesion, immediately in contact with said “protection” layer.Type: GrantFiled: April 27, 2005Date of Patent: April 3, 2012Assignee: Saint-Gobain Glass FranceInventors: Laurent LaBrousse, Eric Petitjean
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Patent number: 8148012Abstract: In a method for manufacturing a negative electrode for a battery, an active material layer including a metallic element M and an element A that is at least any one of oxygen, nitrogen, and carbon is formed on a current collector. This active material layer is irradiated with an X-ray and at least one of intensity of a K? ray of the element A and intensity of a K? ray of the metallic element M in fluorescent X-rays generated from the active material layer is measured.Type: GrantFiled: February 1, 2008Date of Patent: April 3, 2012Assignee: Panasonic CorporationInventors: Hideharu Takezawa, Takayuki Shirane, Shinya Fujimura, Sadayuki Okazaki, Kazuyoshi Honda
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Patent number: 8142848Abstract: A coated cemented carbide insert is particularly useful for wet or dry milling steels at high cutting speeds, milling of hardened steels, and high feed copy milling of tool steels. The insert is formed by a cemented carbide body including WC, NbC and TaC, a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.Type: GrantFiled: September 22, 2011Date of Patent: March 27, 2012Assignee: Seco Tools ABInventors: Andreas Larsson, Anna Sandberg
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Patent number: 8129271Abstract: A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.Type: GrantFiled: July 17, 2007Date of Patent: March 6, 2012Assignee: Tokyo Electron LimitedInventors: Yasuhiko Kojima, Taro Ikeda, Tatsuo Hatano
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Patent number: 8119197Abstract: The invention relates to a novel metal mold having anti-adhesive properties comprising a base metal mold and an anti-adhesive layer comprising a fluorinated alkyl phosphoric acid derivative or a fluorinated alkyl poly-phosphoric acid derivative, including a phosphorous atom and an alkyl chain. The anti-adhesive layer is bonded directly onto a surface of the base metal mold. The base metal mold may be e.g. Nickel, and said fluorinated alkyl phosphoric acid derivative or said fluorinated alkyl poly-phosphoric acid derivative may be selected front the group consisting of phosphonic acids, phosphinic acids, phosphonates and phosphonate salts, phosphinates and phosphinate salts, or their respective oligomers, such that the phosphorous atom is coupled directly to the alkyl chain, such that the phosphorous atom is coupled directly to the alkyl chain.Type: GrantFiled: March 31, 2010Date of Patent: February 21, 2012Assignee: Obducat ABInventors: Matthias Keil, Göran Frennesson, Marc Beck, Babak Heidari
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Patent number: 8084087Abstract: A method of growing spatially-separated and size-controlled particles on substrate surfaces is provided. The method utilizes chemical modification of the substrate surface, an atomic layer deposition (ALD) system, providing a modified layer to the substrate surface and providing an ALD material for nanoparticle deposition. The method induces a Volmer-Weber growth method, where islands of the nanoparticles are formed on the surface. The modified layer controls a number of nucleation sites on the surface, where controlling the number of ALD cycles limits an amount of deposited the material for discrete the nanoparticles.Type: GrantFiled: February 14, 2008Date of Patent: December 27, 2011Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., Ltd.Inventors: Stacey F. Bent, Rong Chen, Xirong Jiang, Marja N. Mullings, Yuji Saito
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Patent number: 8071163Abstract: Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.Type: GrantFiled: April 7, 2008Date of Patent: December 6, 2011Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges ClaudeInventor: Christian Dussarrat
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Patent number: 8066806Abstract: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.Type: GrantFiled: March 4, 2011Date of Patent: November 29, 2011Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hirofumi Fukuoka, Meguru Kashida, Toshio Ohba
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Patent number: 8062706Abstract: Monobutyltinchloride (“MBTC”) is recovered from an effluent vapor stream of a chemical vapor deposition coating process practiced to deposit a fluorine doped tin oxide layer over a glass ribbon. The vapor stream is condensed to a temperature to increase the ratio of MBTC to water in the liquid condensate. The condensed liquid is stored in a phase separation tank to separate the condensed liquid into at least two layers. The layers are individually removed from the phase separation tank, and the layer from the phase separation tank having a density equal to or greater than 80% the density of MBTC is further processed through a vacuum distilling operation to provide MBTC of an acceptable quality to use in the recovered MBTC in the coating process. The recovered MBTC is added to the coating precursors of the chemical deposition process.Type: GrantFiled: March 31, 2009Date of Patent: November 22, 2011Assignee: PPG Industries Ohio, Inc.Inventor: Wagner R. Lozano
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Patent number: 8039051Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.Type: GrantFiled: June 2, 2006Date of Patent: October 18, 2011Assignee: CSG Solar AGInventors: Mark John Keevers, Adrian Bruce Turner
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Patent number: 8029851Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.Type: GrantFiled: August 29, 2008Date of Patent: October 4, 2011Assignee: Korea University Research and Business FoundationInventor: Kwangyeol Lee
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Patent number: 7988836Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.Type: GrantFiled: October 13, 2009Date of Patent: August 2, 2011Assignee: Guardian Industries Corp.Inventor: Vijayen S. Veerasamy
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Publication number: 20110174664Abstract: A colored device casing includes a base, a color layer and a bonding layer. The base has at least one smooth region. The bonding layer is positioned between the base and the color layer and bonds the base and the color layer together. The color layer includes at least one metal layer. Portion of the color layer corresponding to and located over the smooth region has a value of L* in a range from about 81.59 to about 83.59, a value of a* in a range from about ?0.55 to about 0.45 and a value of b* in a range from about ?0.60 to about 0.40 according to the Commission Internationale del'Eclairage LAB system. A surface-treating method for fabricating the colored casing is also provided.Type: ApplicationFiled: July 19, 2010Publication date: July 21, 2011Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventors: GA-LANE CHEN, CHAO-TSANG WEI, CHUNG-PEI WANG, CHING-CHOU CHANG, SHIH-CHE CHIEN, WEI-CHENG LING, CHIA-YING WU, HSIN-CHIN HUNG, MING-YANG LIAO, TAI-SHENG TSAI, CHIEN-HAO HUANG
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Publication number: 20110135948Abstract: In one embodiment, a composition (10) to be mixed with a molten metal to make a metal matrix composite, the composition characterized by: a ceramic reinforcing filler (12), the ceramic reinforcing filler not being wettable by molten aluminum and/or not being chemically stable in molten aluminum, the ceramic reinforcing filler being coated with a ceramic material, the ceramic material being wettable by and chemically stable in molten aluminum. In a related embodiment, a composition (20) to make a porous preform to be infiltrated by molten metal to make a metal matrix composite, the composition characterized by: a ceramic reinforcing filler (23), the ceramic reinforcing filler not being wettable by molten aluminum, the ceramic reinforcing filler being coated with a ceramic material (22) and optionally with a metal (21) such as nickel, the ceramic material being wettable by molten aluminum.Type: ApplicationFiled: April 8, 2004Publication date: June 9, 2011Inventors: Aleksander J. Pyzik, Ted A. Morgan, Terry I. Hu, Daniel R. Lister, Robert A. Newman, Richard Allen Lungard, Qin Deng
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Patent number: 7919143Abstract: A carrier for an object, preferably a substrate of a semiconductor component such as a wafer, includes a receiving element for the object and gas outlets arranged below the receiving element along the object received. At least sections of the carrier are made of a material which including stabilizing fibers and having a porosity which forms the gas outlets, in order to enable a desired gas to exit from the gas outlets in a dosed and finely distributed manner.Type: GrantFiled: December 6, 2004Date of Patent: April 5, 2011Assignee: Schunk Kohlensteofftechnik GmbHInventor: Stefan Schneweis
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Publication number: 20110076402Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.Type: ApplicationFiled: December 9, 2010Publication date: March 31, 2011Applicant: ASM INTERNATIONAL N.V.Inventors: Marko Tuominen, Eric Shero, Mohith Verghese
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Patent number: 7883743Abstract: A method of repairing a defect in a gas turbine engine component includes exposing the defect to a chemically reducing gas to clean the defect surface of undesired particles and oxidation. Before the cleaning, a protective coating is applied to the defect surface to resist inter-granular attack during the cleaning process.Type: GrantFiled: December 7, 2005Date of Patent: February 8, 2011Assignee: United Technologies CorporationInventors: Sor Tin Ng, Eng Soon Ang, Seng Wee Neo, Chee Kin Woo, Tian Siang Jason Kong
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Patent number: 7879412Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.Type: GrantFiled: June 10, 2005Date of Patent: February 1, 2011Assignees: The University of Electro-Communications, Campus Create Co., Ltd.Inventor: Hideo Isshiki
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Patent number: 7850790Abstract: Methods of passivating a metal surface are described, the methods comprising the steps of exposing the metal surface to a silicon-containing passivation material, evacuating the metal surface, exposing the treated surface to a gas composition, having a concentration of reactive gas that is greater than an intended reactive gas concentration of gas to be transported by the metal surface, evacuating the metal surface to remove substantially all of the gas composition to enable maintenance of an increased shelf-life, low concentration reactive gas at an intended concentration, and exposing the metal surface to the reactive gas at the intended reactive gas concentration. Manufactured products, high stability fluids, and methods of making same are also described.Type: GrantFiled: April 1, 2009Date of Patent: December 14, 2010Assignee: American Air Liquide, Inc.Inventors: Tracey Jacksier, Robert Benesch, Malik Haouchine
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Publication number: 20100307553Abstract: The present disclosure concerns a means to use light manipulation in engineered or structured coatings for thermal or photothermal effects and/or refractive and reflective index management. Such metallic, nonmetallic, organic or inorganic metamaterials or nanostructures could be used to manipulate light or energy for thermal or photothermal effects and/or refractive and reflective index management on or in any material or substrate on or in any material or substrate. The light scattering properties of metallic particles and film can be used to tune such coatings, structures or films over a broad spectrum.Type: ApplicationFiled: August 24, 2009Publication date: December 9, 2010Inventors: ANTHONY DEFRIES, MARK BRONGERSMA
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Patent number: 7837806Abstract: Articles of manufacture and methods of making and using same concern a container having an internal space and a passivated internal metal surface. The container contains a composition of an acid gas and a balance gas contained within the internal space and in contact with the passivated internal metal surface. The stability of the acid gas concentration over time is enhanced.Type: GrantFiled: January 13, 2009Date of Patent: November 23, 2010Assignee: American Air Liquide, Inc.Inventors: Robert Benesch, Malik Haouchine, Tracey Jacksier
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Patent number: 7832550Abstract: Methods of passivating a metal surface are described, the methods comprising the steps of exposing the metal surface to a silicon-containing passivation material, evacuating the metal surface, exposing the treated surface to a gas composition, having a concentration of reactive gas that is greater than an intended reactive gas concentration of gas to be transported by the metal surface, evacuating the metal surface to remove substantially all of the gas composition to enable maintenance of an increased shelf-life, low concentration reactive gas at an intended concentration, and exposing the metal surface to the reactive gas at the intended reactive gas concentration. Manufactured products, high stability fluids, and methods of making same are also described.Type: GrantFiled: April 25, 2005Date of Patent: November 16, 2010Assignee: American Air Liquide, Inc.Inventors: Tracey Jacksier, Robert Benesch, Malik Haouchine
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Patent number: 7815922Abstract: Methods for preparing articles having a bioactive surface comprising treating a substrate to form free reactive groups, depositing a monomer onto the treated substrate, and covalently immobilizing a biologically functional molecule onto the deposited monomer. Additional embodiments include methods for the deposition of the monomer onto the treated substrate in a solvent-free environment. Further embodiments include articles having surfaces prepared using the methods described herein. Additional embodiments include articles prepared using the methods described herein.Type: GrantFiled: May 16, 2005Date of Patent: October 19, 2010Assignee: Becton, Dickinson and CompanyInventors: Bryce Chaney, David Montgomery, Ross W. Jacobson
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Patent number: 7763317Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.Type: GrantFiled: March 30, 2007Date of Patent: July 27, 2010Assignee: Intel CorporationInventors: James M. Blackwell, Willy Rachmady, Gregory J. Kearns, Darryl J. Morrison
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Patent number: 7758929Abstract: In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.Type: GrantFiled: March 27, 2007Date of Patent: July 20, 2010Assignee: Tokyo Electron LimitedInventors: Yohei Yamazawa, Noriaki Imai
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Publication number: 20100166815Abstract: The invention relates to a method for preparing a nanocomposite material by simultaneous vapour phase chemical deposition and vacuum injection of nanoparticles and to the materials and nanoparticles obtained thus and the application thereof.Type: ApplicationFiled: July 18, 2008Publication date: July 1, 2010Inventors: Sophie Mailley, Laurent Bedel, Fabrice Emieux
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Patent number: 7740823Abstract: A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.Type: GrantFiled: October 23, 2007Date of Patent: June 22, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Oleg Ledyaev, Ki Ho Park, Si Hyuk Lee, Soo Min Lee
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Patent number: 7740916Abstract: A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 ? thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH3 and H2S. The use of PH3 and H2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 ? thick in a vacuum atmosphere such as found in an EUVL machine.Type: GrantFiled: April 5, 2004Date of Patent: June 22, 2010Assignee: EUV LLC.Inventors: Philip A. Grunow, Wayne M. Clift, Leonard E. Klebanoff
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Patent number: 7732012Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.Type: GrantFiled: May 16, 2005Date of Patent: June 8, 2010Assignees: Shin-Etsu Film Co., Ltd, Sunric Co., LtdInventors: Tatsuhiko Hongu, Yasuhiro Kato, Hiroshi Hagimoto
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Patent number: 7713573Abstract: The present invention relates generally to medical devices with therapy eluting components and methods for making same. More specifically, the invention relates to implantable medical devices having at least one porous layer, and methods for making such devices, and loading such devices with therapeutic agents. A mixture or alloy is placed on the surface of a medical device, then one component of the mixture or alloy is generally removed without generally removing the other components of the mixture or alloy. In some embodiments, a porous layer is adapted for bonding non-metallic coating, including drug eluting polymeric coatings. A porous layer may have a random pore structure or an oriented or directional grain porous structure. One embodiment of the invention relates to medical devices, including vascular stents, having at least one porous layer adapted to resist stenosis or cellular proliferation without requiring elution of therapeutic agents.Type: GrantFiled: February 10, 2006Date of Patent: May 11, 2010Assignee: Medtronic Vascular, Inc.Inventors: Gary K. Owens, Brian R. Wamhoff, Matthew S. Hudson, Whye-Kei Lye, Joshua Spradlin, Michael Reed, Kareen Looi
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Publication number: 20100080904Abstract: Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.Type: ApplicationFiled: September 29, 2008Publication date: April 1, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Nir Merry, Son T. Nguyen
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Publication number: 20100080903Abstract: To provide a method for producing a fluoropolymer excellent in adhesion to a substrate and film strength. A method for producing a fluoropolymer thin film, which comprises forming a fluoropolymer thin film on a substrate by a physical vapor deposition method using, as an evaporation source, a fluoropolymer having a fluorinated aliphatic ring structure in its main chain and having a weight average molecular weight of from 3,000 to 80,000.Type: ApplicationFiled: October 19, 2009Publication date: April 1, 2010Applicant: ASAHI GLASS COMPANY LIMITEDInventors: Chikaya TAMITSUJI, Kunio Watanabe, Yoshihiko Sakane, Jun Minamidate
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Publication number: 20100080902Abstract: A novel low cost polysilicon production technique for Siemens type reactors is disclosed. In one embodiment, a CVD reactor assembly includes a reactor forming a stainless steel envelope attached to a base plate. The stainless steel envelope is designed to receive a thermal fluid at room temperature and maintain a reactor wall temperature up to 450° C. A steam generator is configured to receive the thermal fluid having a temperature up to 450° C. from the reactor and generate a low pressure steam around 350° C. to 450° C. A low pressure steam turbine/generator is configured to receive the low pressure steam and generate electricity. In another embodiment, the steam generator is configured to receive heat from an external source in addition to the thermal fluid to generate super heated steam. A conventional steam turbine/generator receives the super heated steam and generates electricity.Type: ApplicationFiled: September 29, 2008Publication date: April 1, 2010Inventors: FARID ARIFUDDIN, Mohan Chandra, Sankaran Muthukrishnan
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Patent number: 7678420Abstract: A chemical vapor deposition method provides a smooth continuous germanium film layer, which is deposited on a metallic substrate at a sufficiently lower temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum and copper. Another chemical vapor deposition method provides a smooth continuous silicon germanium film layer, which is deposited on a silicon dioxide substrate at a sufficiently low temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum, copper and chalcogenides memory materials.Type: GrantFiled: June 22, 2005Date of Patent: March 16, 2010Assignee: Sandisk 3D LLCInventor: Scott Brad Herner
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Publication number: 20100058954Abstract: A novel carbon-modified titanium dioxide film (CMF-TiO2) and a method for producing same by a CVD method at atmospheric pressure. The precursor compounds used in this context for the titanium dioxide and the carbon component are titanium-organic compounds and unsaturated aromatic hydrocarbons. Thermal treatment at about 250° C. to about 600° C., preferable at about 250° C. to about 300° C. forms a CMF-TiO2, the carbon content of which is about 0.2% to about 10.0% by weight, preferably about 0.2% to about 6.0% by weight and particularly preferably about 0.2% to about 2.5% by weight. A CMF-TiO2 film is characterised by high catalytic activity in the degradation of air and water pollutants with visible light and light absorption in the range from 400 nm to 700 nm, as well as by 1) a quasi-Fermi level of the electrons of ?0.5 V at pH 7 (relative to NHE) and/or by 2) C1s bonding energies of 284.8, 286.3 and 288.8 eV; and/or by 3) an isotropic electronic spin resonance (ESR) signal at a g-value of 1.900 to 2.005.Type: ApplicationFiled: September 8, 2009Publication date: March 11, 2010Inventor: Horst Kisch
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Patent number: 7666463Abstract: Methods for manufacturing porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's). Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, a thin coating of nuclear fuel may be deposited inside of a highly porous skeletal structure made, for example, of reticulated vitreous carbon foam.Type: GrantFiled: May 17, 2006Date of Patent: February 23, 2010Assignee: Sandia CorporationInventors: Dennis L. Youchison, Brian E. Williams, Robert E. Benander
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Publication number: 20100021727Abstract: A method of continuously forming a thin film includes the step of: moving a glass substrate with a thin strip shape having a constant db/2(d+b), where d is a thickness thereof and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region in which a reaction gas is supplied and a temperature is controlled to be high so that the glass substrate is rapidly heated; and moving continuously the glass substrate, immediately after the film depositing region, to pass through a cooling region in which a temperature is lower than that of the film depositing region, so that the glass substrate is rapidly cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate.Type: ApplicationFiled: September 11, 2008Publication date: January 28, 2010Inventors: Toshihiro Nakamura, Sadayuki Toda, Hisashi Koaizawa
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Patent number: 7650710Abstract: A body of iron, steel or other such ferrous material is protected from thermochemical erosion by a layer of an iron nitride having a relatively low nitrogen content. The atomic percentage of nitrogen in the iron nitride layer is no greater than 20%, and in specific embodiments is in the range of 10-15%. The nitride layer may have a layer of a refractory material deposited thereatop. Some refractory materials include metals such as chromium. The invention has specific utility for protecting gun barrels, turbines, internal combustion engines, drilling equipment, machine tools, aerospace systems and chemical reactors which are exposed to extreme conditions of temperature and pressure. Specifically disclosed is a gun barrel which incorporates the invention.Type: GrantFiled: June 3, 2004Date of Patent: January 26, 2010Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Paul J. Conroy, James M. Garner, Charles Leveritt
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Publication number: 20100003504Abstract: An environmental barrier for a substrate of ceramic matrix composite material containing silicon, in particular containing SiC, is formed by an anticorrosion protection layer containing an aluminosilicate type compound of an alkali or alkaline-earth or rare earth element, e.g. BSAS, with a chemical barrier forming layer of aluminum nitride being interposed between the substrate and the anticorrosion protection layer.Type: ApplicationFiled: December 6, 2007Publication date: January 7, 2010Applicant: SNECMA PROPULSION SOLIDEInventors: Caroline Louchet-Pouillerie, Henri Tawil, Eric Bouillon
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Publication number: 20090324825Abstract: Embodiments related to chemical vapor deposition of aluminum nitride onto surfaces are provided. In particular, methods are provided for coating AlN onto solid surfaces by heating and vaporizing an aluminum nitride precursor and exposing solid surfaces to the heated and vaporized aluminum nitride precursor. In an embodiment, the aluminum nitride precursor is AlCl3(NH3)x, wherein x=1-6. In an embodiment, the surface is a metallic substrate, such as a silicon, aluminum nitride, steel, aluminum, molybdenum and manganese. In an embodiment, the surface is steel that is nitrided to form an iron nitride layer on which AlN is deposited.Type: ApplicationFiled: May 29, 2009Publication date: December 31, 2009Inventors: Carl R. EVENSON, Erick J. SCHUTTE, Joel S. THOMPSON
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Publication number: 20090297725Abstract: The specification discloses a method and apparatus enabling the formation of a diffusion surface layer on a surface of a metal substrate, typically a ferrous based metal substrate, wherein in a first stage in a first fluidized bed furnace, a diffusion zone is formed extending inwardly from the surface of the metal substrate in which nitrogen has been diffused to form a nitride or carbo nitride inner zone and an outer white layer that is substantially free of porosity, treating the substrate formed in the first stage to prevent formation of or remove any surface oxide on the surface of the substrate, and in a second stage separate from the first stage, holding the thus treated substrate in a fluidized bed furnace operated under an inert atmosphere and fluidized by a flow of inert gas or gases, the substrate in the fluidized bed furnace being treated in the presence of a halide gas and a particulate metal or metal alloy.Type: ApplicationFiled: July 20, 2006Publication date: December 3, 2009Inventor: Ray William Reynoldson
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Patent number: 7625600Abstract: A process for forming a protected metal mass includes forming an unprotected metal mass, vaporizing a layer forming reactant and depositing the layer forming reactant onto the unprotected metal mass, causing the layer forming reactant to bind to the surface of the metal mass as an attached protective layer.Type: GrantFiled: December 3, 2004Date of Patent: December 1, 2009Inventors: Victor J. Bellitto, John N. Russell, Jr.
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Patent number: 7622152Abstract: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi2—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSi3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the MoSi2—Si3N4 composite diffusion layer.Type: GrantFiled: July 10, 2006Date of Patent: November 24, 2009Assignee: Korea Institute of Science and TechnologyInventors: Jae Soo Kim, Kyeung Ho Kim, Ji Young Byun, Jin-Kook Yoon, Doo Yong Kim, Jong Kown Lee, Jong Chul Shin, Dae Ho Rho
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Patent number: 7612015Abstract: A photocatalyst layer (TiO2) is formed on the surface of a substrate (glass plate) through the intermediary of a monoclinic undercoat layer (ZrO2), and no dead layer is substantially present between the photocatalyst layer and the undercoat layer. Also, by providing a peel preventing layer between the substrate and the undercoat layer, it is possible to eliminate film peeling between the photocatalyst layer and the substrate, defects and discoloration. A metal element may be doped in the photocatalyst layer, and it is preferable that the metal element is at least one of Sn, Zn, Mo and Fe. The phrase “no dead layer is substantially present” means that the thickness of the dead layer is 20 nm or less. The thickness of the photocatalyst layer is preferably from 1 nm to 1,000 nm, more preferably from 1 nm to 500 nm.Type: GrantFiled: December 24, 2002Date of Patent: November 3, 2009Assignee: Nippon Sheet Glass Company, LimitedInventors: Toshiaki Anzaki, Yoshifumi Kijima, Kenji Mori
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Patent number: 7597951Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.Type: GrantFiled: March 20, 2006Date of Patent: October 6, 2009Assignee: Sandvik Intellectual Property ABInventors: Carl Björmander, Markus Rodmar
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Patent number: 7588804Abstract: Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reaction chamber, a lid attachable to the reaction chamber, and a connector. The connector has a first portion coupled to the lid, a second portion coupled to the reaction chamber, a gas passageway extending through the first and second portions, and a seal. The seal can surround the gas passageway between the first and second portions. The first portion is detachably coupled to the second portion. In one aspect of this embodiment, the connector can also include a second gas passageway extending through the first and second portions and a second seal surrounding the second gas passageway between the first and second portions.Type: GrantFiled: August 19, 2004Date of Patent: September 15, 2009Assignee: Micron Technology, Inc.Inventor: Ross S. Dando
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Patent number: 7585546Abstract: Methods and structures for reducing and/or eliminating moisture penetration in an optical package. The optical package may include (1) a layer of inorganic material placed over the points of the optical package susceptible moisture penetration of the optical package; (2) a portion of hygroscopic material placed over the points of the optical package susceptible to moisture penetration; (3) a layer of hygroscopic material placed on the interior surface of the optical package; and/or (4) a layer of hydrophobic material coated on the optical surfaces of the optical package.Type: GrantFiled: August 11, 2004Date of Patent: September 8, 2009Assignee: Finisar CorporationInventors: Ming Shi, William Freeman, Johnny Zhong, Liren Du, Xin Lou, Steve Wang
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Publication number: 20090194507Abstract: The present invention relates to a device for cleaning, etching, activation and subsequent treatments of glass surfaces, glass surfaces coated with metal oxides or with organic material layers, SiO2-layer coated materials, and SiO2-layer coated materials with an organic material surface coating by effects of an electrical plasma layer. The invention disclosed herein includes at least one electrode system (1) consisting of at least two electrodes (2) and (3) situated inside of a dielectric body (4). An electrical plasma layer is generated preferably at atmospheric gas pressure, and preferably above the electrodes (2) and (3) situated on the same side of the treated glass, metal oxide coated glass, other SiO2-coated materials and SiO2-coated materials with a layer of organic material (5) and which are energized by an alternating or pulsed electrical voltage applied between them.Type: ApplicationFiled: June 7, 2007Publication date: August 6, 2009Applicant: Faculty of Mathematics Physics and Informatics Comenius UniversityInventor: Mirko Cernak
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Patent number: 7553468Abstract: Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.Type: GrantFiled: March 7, 2008Date of Patent: June 30, 2009Assignee: Chisso CorporationInventors: Shuuichi Honda, Toru Tanaka, Satoshi Hayashida
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Patent number: RE42887Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.Type: GrantFiled: August 26, 2009Date of Patent: November 1, 2011Assignee: Case Western Reserve UniversityInventors: Mehran Mehregany, Christian A. Zorman, Xiao-An Fu, Jeremy Dunning