Base Includes An Inorganic Compound Containing Silicon Or Metal (e.g., Glass, Ceramic, Brick, Etc.) Patents (Class 427/255.11)
  • Patent number: 6689422
    Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: February 10, 2004
    Assignee: Howmet Research Corporation
    Inventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
  • Publication number: 20030232150
    Abstract: To enable CVD coating with long coating times in an economical manner, the invention provides a CVD coating device, which comprises a conveyor, at least one coating station for coating workpieces, at least one evacuator and a device that generates a plasma in at least one subregion of the coating station, in which device at least two workpieces can be received in the at least one coating station.
    Type: Application
    Filed: May 26, 2003
    Publication date: December 18, 2003
    Inventors: Gregor Arnold, Stephen Behle, Andreas Luttringhaus-Henkel, Matthias Bicker
  • Patent number: 6656373
    Abstract: An optical element which controls both the phase and irradiance distribution, thereby completely specifying the E-field, of light, allowing completely arbitrary control of the light at any plane. Such an optical element includes a portion that controls the phase and a portion that controls the irradiance. The portion that controls the irradiance is an apodized irradiance mask having its transmission varying with position in a controlled fashion. This apodized irradiance mask is preferably a pattern of metal. In order to insure a smoothly varying pattern of metal with minimized diffraction effects, a very thin mask spaced from a substrate is used to provide the metal on the substrate. The apodized irradiance mask may be placed directly on the phase control portion, or may be on an opposite side of a substrate of the phase controlled portion.
    Type: Grant
    Filed: July 7, 2000
    Date of Patent: December 2, 2003
    Assignee: Wavefront Sciences, Inc.
    Inventors: Daniel R. Neal, Justin D. Mansell
  • Patent number: 6649031
    Abstract: A corrosion resistant coated fuel cell plate and method of making the same are embodied in a metal plate provided with a multilayered conductive coating and then with an overcoating which fills in fine scale porosities in the coating. In one preferred embodiment, the overcoating is amorphous graphite applied through a deposition process. In another preferred embodiment, the overcoating is a thin layer of oxide created by a chemical anodization process.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: November 18, 2003
    Assignee: Hybrid Power Generation Systems, LLC
    Inventors: Zafar Iqbal, Dave Narasimhan, James V. Guiheen, Timothy Rehg
  • Patent number: 6605313
    Abstract: There is described a process and apparatus for the physical vapor deposition of an anisotropic phosphor composition with an auto-collimating, optical waveguide structure.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: August 12, 2003
    Assignee: Air Techniques, Inc.
    Inventors: Claude Goodman, Alan Lyon, Daniel Wildermuth
  • Patent number: 6599573
    Abstract: A manufacturing process of Christmas tree decorations where glass half-products are first blown to required dimensions and shapes, including the process stem. This glass half-product is fixed into the rack and placed into the metal-coating device where, under vacuum conditions, a thin (1 to 7 microns) layer of metals and/or their alloys is coated on its surface by vacuum plating or vacuum powder coating processes. The metal-coated surfaces created this way may be finished in various colors using clear and color varnishes either gloss or matt. The glass half-products for Christmas tree decorations may be provided with masking in the place of intended decor before the half-product is put into the vacuum metal-coating device. After the masking elements are removed, clear non-coated spots are created on the decoration surfaces. The rack accommodating the glass half-products of decorations is for their placement into the metal-coating device when above methods are performed.
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: July 29, 2003
    Inventors: Jan Gajdosik, Jaroslav Trtik
  • Patent number: 6592980
    Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: July 15, 2003
    Assignee: Air Products and Chemicals, Inc.
    Inventors: James Edward MacDougall, Kevin Ray Heier, Scott Jeffrey Weigel, Timothy W. Weidman, Alexandros T. Demos, Nikolaos Bekiaris, Yunfeng Lu, Michael P. Nault, Robert Parkash Mandal
  • Patent number: 6576345
    Abstract: Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: June 10, 2003
    Inventors: Patrick A. Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T. Schulberg, Bunsen Nie
  • Patent number: 6565917
    Abstract: A paste for one of a via and an external feature, such as a pad, tab, or line, of a ceramic substrate, includes at least one of titania and zirconia, and a filler material mixed with the at least one of titania and zirconia. Further, the via structure or external feature such as an input/output pad, tab, or line, includes a metallic plating thereover. A method of forming the via structure or the external feature on the ceramic substrate, includes steps of either depositing the paste in the via of the ceramic substrate or depositing the paste on the ceramic substrate, and depositing, by a dry process metallic plating, a metallic plating on the paste. The paste includes at least one of titania and zirconia for reducing residual stress without effecting the platability of the metallic plating.
    Type: Grant
    Filed: March 15, 2000
    Date of Patent: May 20, 2003
    Assignee: International Business Machines Corporation
    Inventors: Srinivasa S. N. Reddy, Donald R. Wall
  • Patent number: 6558742
    Abstract: A method of forming diamond crystals and diamond films from a dissociated precursor solution of methanol and at least one carbon containing compound having a carbon to oxygen ration of greater than one is disclosed. The A hot filament is applied to dissociate the vaporized precursor of the premixed solution and generate oxidizing and etching radicals such as OH. O, H as well as carbon depositing radicals such as CH3. Graphitic and amorphous carbon deposition is suppressed or preferentially etched resulting in the net deposition of good quality diamond crystals and diamond films.
    Type: Grant
    Filed: February 10, 2000
    Date of Patent: May 6, 2003
    Assignee: Auburn University
    Inventor: Yonhua Tzeng
  • Patent number: 6548113
    Abstract: Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: April 15, 2003
    Assignee: Pacific Northwest Division
    Inventors: Jerome Birnbaum, Gary Maupin, Glen Dunham, Glen Fryxell, Suresh Baskaran
  • Publication number: 20030064608
    Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 &mgr;m or smaller) features.
    Type: Application
    Filed: September 24, 2002
    Publication date: April 3, 2003
    Inventors: Ram W. Sabnis, Douglas J. Guerrero
  • Patent number: 6509066
    Abstract: A series of processes have been discovered whereby uniform oxygen doping of lead chalcogenides have been achieved by using vapor deposition combined with in situ or ex situ ion implantation allowing the high yield manufacture of high S/N infrared detectors.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: January 21, 2003
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Steven Jost
  • Patent number: 6468595
    Abstract: A thermally-stable cationic photoinitiator capable of flash vaporization under vacuum and temperature conditions of an available flash-evaporation chamber is selected. The photoinitiator is mixed with a cation-polymerizable monomer and/or oligomer of interest and the mixture is flash evaporated and condensed in conventional manner as a film on a cold substrate. The resulting vacuum-deposited, homogeneous layer is cured with a high-energy radiation source that causes the cationic photoinitiator to liberate acidic species that catalyze the crosslinking of the monomer/oligomer compounds in its deposited film form. As a result of the homogeneous, pinhole-free nature of the vacuum deposition process, the thin-film polymer product does not suffer from the disadvantages attendant to prior-art atmospheric processes for cationically-cured polymers.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: October 22, 2002
    Assignee: Sigma Technologies International, Inc.
    Inventors: Michael G. Mikhael, Angelo Yializis
  • Patent number: 6465042
    Abstract: A material having a titanium dioxide crystalline orientation film oriented in a specific direction on a surface of a substrate is produced by spraying a vaporized titanium alkoxide onto the surface of the substrate heated under atmospheric pressure along with an inert gas as a carrier. The material having the titanium dioxide crystalline orientation film is excellent in properties such as an antimicrobial activity, a stain resistance, an ultra-hydrophilic property and the like, and is widely used as kitchen appliances such as cooking utensils, tableware and a refrigerator, tools for medical care, materials for a toilet or a toilet room, a filter of an air-conditioner, electronic parts, building materials and road-associated materials.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: October 15, 2002
    Assignees: Kousei Co., Ltd., Hidetoshi Saitoh
    Inventors: Hidetoshi Saitoh, Shigeo Ohshio, Norio Tanaka, Hideki Sunayama
  • Patent number: 6460375
    Abstract: A system is provided for forming an ice coating on the outer surface of blown glass tube-shaped glass pieces (30) of an art work. The blown glass tubes are attached to a support surface (36) such that opposing ends of each glass tube are positioned over apertures in the surface. Liquid coolant contained in a thermally insulated tank (10) is cooled by a compressor (12) and then forced through an inlet manifold subassembly (20, 24) into the glass tubes, and then returned through a return manifold subassembly (40,44) to the tank for re-circulation. The continuous flow of liquid coolant results in the formation of an ice coating on the outer surface of the blown glass tubes.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: October 8, 2002
    Inventor: Terje Lundaas
  • Patent number: 6444326
    Abstract: Method of modifying the surface properties of a substrate by depositing a coating of hydrogenated amorphous silicon on the surface of the substrate and functionalizing the coated substrate by exposing the substrate to a binding reagent having at least one unsaturated hydrocarbon group under pressure and elevated temperature for an effective length of time. The hydrogenated amorphous silicon coating is deposited by exposing the substrate to silicon hydride gas under pressure and elevated temperature for an effective length of time.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: September 3, 2002
    Assignee: Restek Corporation
    Inventor: David Abbott Smith
  • Patent number: 6417014
    Abstract: A processing line includes a processing tool and an automatic process controller. The processing tool is adapted to deposit a layer of material on a semiconductor wafer based on an operating recipe. The automatic process controller is adapted to identify a post-idle set of wafers to be processed in the processing tool after an idle period, determine deposition times for wafers in the set of post-idle wafers, and modify the operating recipe of the processing tool for each of the wafers in the post-idle set based on the deposition times. A method for reducing wafer to wafer deposition variation includes designating a set of post-idle wafers; determining a deposition time for each of the wafers in the post-idle set, at least two of the deposition times being different; and depositing a layer on the wafers in the post-idle set based on the deposition times determined.
    Type: Grant
    Filed: October 19, 1999
    Date of Patent: July 9, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kin-Sang Lam, Sey-Ping Sun
  • Patent number: 6403157
    Abstract: A fixture for selectively masking a turbine blade 60 includes a locator 10 with a separable receptacle 40 having portals 50. Guide bars 18 extend from the locator for guiding a pair of shield carriers 20 between deployed and retracted positions. Each shield carrier has a shield 26 projecting therefrom. In use, a turbine blade 60, whose root 70 includes a fir tree attachment 72 and a damper pocket 74, is mounted on the fixture so that the receptacle embraces the blade root. The shield carriers are translated along the guide bars until the shields penetrate through the portals and into the receptacle thus segregating the attachment 72 from the damper pocket 74. Masking powder 84 is then compressed into the receptacle to envelop the attachment while leaving the damper pocket unmasked.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: June 11, 2002
    Assignee: United Technologies Corporation
    Inventors: Dennis M. Ireland, Walter E. Olson, Ryan H. Sleight, Peter L. Barilovich
  • Patent number: 6395343
    Abstract: A thermal barrier coating for superalloy turbine engine vanes and blades that are exposed to high temperature gas is disclosed. The coating includes an aluminide or MCrAIY layer, an alumina layer, and a ceramic top layer. The ceramic layer has a columnar grain microstructure. A bond inhibitor is disposed in the gaps between the columnar grains. This inhibitor is either unstabilized zirconia, unstabilized hafnia, or a mixture thereof.
    Type: Grant
    Filed: April 19, 1996
    Date of Patent: May 28, 2002
    Assignee: AlliedSignal
    Inventor: Thomas E. Strangman
  • Patent number: 6383566
    Abstract: The present invention is directed to a process for depositing at least one layer (3) based on tungsten and/or on molybdenum by chemical vapor deposition on a non-conductive substrate (1), such as glass, ceramic, glass-ceramic, or polymer, which includes providing at least one tungsten- and/or molybdenum-containing precursor in the form of a metal halide and/or of an organometallic compound, and at least one reducing agent, such as hydrogen or silane, to form the at least one metal layer. The present invention also relates to the substrate obtained by the preceding process and its applications, especially for producing a glazing, mirrors, or emissive screens.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: May 7, 2002
    Assignee: Saint-Gobain Vitrage
    Inventor: Georges Zagdoun
  • Patent number: 6372306
    Abstract: Disclosed are ferroelectric materials with a chemical formula: A(1−x)BxC(1−y)DyF3; such as NaCaF3, or Na1−xKxCaF3, which are fabricated by deposition of source materials onto a (111) orientation substrate having a cubic lattice constant of between about 3.8 to 4.3 Angstroms, or onto a (001) orientation substrate having a hexagonal a-axis parameter of between about 5.4 to 6.2. A preferred deposition technique is pulsed laser deposition.
    Type: Grant
    Filed: September 14, 2000
    Date of Patent: April 16, 2002
    Assignee: Board of Regents of the University of Nebraska
    Inventors: Robert W. Smith, James S. Horwitz
  • Patent number: 6369256
    Abstract: Volatile low melting solid Cu(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula: Cu(OCCF3R1CH2NHR2)2 wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R2 is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF3, R2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.
    Type: Grant
    Filed: June 9, 2000
    Date of Patent: April 9, 2002
    Assignees: National Research Council of Canada, National Tsing-Hua University
    Inventors: Yun Chi, Peng-Fu Hsu, Tsung-Wu Lin, Chao-Shiuan Liu, Arthur J. Carty
  • Patent number: 6365266
    Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
    Type: Grant
    Filed: March 3, 2000
    Date of Patent: April 2, 2002
    Assignee: Air Products and Chemicals, Inc.
    Inventors: James Edward MacDougall, Kevin Ray Heier, Scott Jeffrey Weigel
  • Patent number: 6340637
    Abstract: A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3—) are formed from methane gas.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: January 22, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Ravi Iyer, Sujit Sharan
  • Patent number: 6338882
    Abstract: A method for applying a light-blocking layer between a photoconducting layer and a mirror when making an optically addressable spatial light modulator (OASLM) using a chemical vapor deposition process. The light-blocking layer and the photoconducting layer are applied in a shared process step in which both the thickness and composition of the photoconducting layer to be applied to the transparent electrode, as well as the thickness and composition of the light-blocking layer to be applied to the photoconducting layer are determined by a time-related change of the variation of the gas composition during the deposition process. The structure of the OASLM can be optimally adapted to a desired purpose.
    Type: Grant
    Filed: March 23, 2000
    Date of Patent: January 15, 2002
    Assignee: Deutsche Telekom AG
    Inventors: Wolfgang Dultz, Wolfgang Haase, Leonid Beresnev, Elena Konshina, Arkadii Onokhov
  • Patent number: 6322671
    Abstract: A process is described for forming integral coatings on metal and/or non-metallic substrate surfaces by the method of physical and chemical deposition in a vacuum of metal and/or non-metallic materials. The process, improved so as to obtain a coating with quasi-plasticity behavior, includes an action for depositing material onto substrate surfaces in the shape of multiple separated-in-space deposition zones of predetermined form and dimensions, and, also, an action for continuous migration of these deposition zones over the substrate surface during the whole of the coating formation process, while preserving a uniform coating thickness. In a particular embodiment, a protective high-temperature resistant NiCrAlY system coating is formed on a protected component by physical vapor deposition, which deposition is done through a screen having a series of narrow and long slots.
    Type: Grant
    Filed: January 4, 2000
    Date of Patent: November 27, 2001
    Assignee: Ionica, LLC
    Inventor: Askar Dzhamilevich Mingazhev
  • Patent number: 6242045
    Abstract: Metal nitrides are prepared by reacting a metal halide with an amine at an elevated temperature. The process is useful for depositing titanium nitride and vanadium nitride films onto glass, to make solar control automotive and architectural glazings.
    Type: Grant
    Filed: June 24, 1993
    Date of Patent: June 5, 2001
    Assignee: Visteon Global Technologies, Inc.
    Inventors: James William Proscia, Keith Brian Williams, Gene P. Reck
  • Patent number: 6235416
    Abstract: A composite in which a substrate body is coated with a single layer or multiple layers and at least one layer has two or three phases comprised of cubic ZrCN and monoclinic or tetragonal ZrO2. The composite can be in the form of a lathe or milling cutter cutting insert.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: May 22, 2001
    Assignee: Widia GmbH
    Inventors: Udo Kõnig, Hartmut Westphal, Volkmar Sottke
  • Patent number: 6197373
    Abstract: Systems and methods disclosed provide a LPCVD furnace which includes a lower gas injection tube that enters a quartz tube of the LPCVD furnace at a lower portion thereof, and extends toward the upper portion of the quartz tube. Thus, the lower gas injection tube extends a shorter distance within the quartz tube than a conventional injection tube attached to the bell-shaped end of the quartz tube. A LPCVD furnace in accordance with the invention comprises a quartz tube having an interior chamber which includes an upper portion (adjacent a belled end) and a lower portion (adjacent a flanged end), and a gas injection tube for injecting a gas into the interior chamber of the quartz tube, wherein the gas injection tube enters the interior chamber of the quartz tube at the lower portion thereof and extends toward the upper portion thereof. A pedestal for supporting a wafer boat may be positioned at the lower portion of the interior chamber, and configured to receive the gas injection tube.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: March 6, 2001
    Assignee: SEH America, Inc.
    Inventor: Patrick G. Brown
  • Patent number: 6184136
    Abstract: A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3—) are formed from methane gas.
    Type: Grant
    Filed: April 16, 1999
    Date of Patent: February 6, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Ravi Iyer, Sujit Sharan
  • Patent number: 6174490
    Abstract: Method for producing a high temperature resistant exchanger. The exchanger is made from a number of tubes sealingly connected to a pipe plate which is further connected to an enclosure. The pipe plate is realised by positioning enclosure and tubes in a mould and pouring a ceramic slurry which is subsequently sintered.
    Type: Grant
    Filed: March 12, 1999
    Date of Patent: January 16, 2001
    Assignee: Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek (TNO)
    Inventors: Hendrik Willem Brinkman, Harrie Gorter, Rinse Alle Terpstra, Johannes Coenradus Theodorus Van Der Heijde, Joost Petrus Gerardus Maria Van Eijk, Godefridus Hendricus Maria Gubbels