Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

Abstract: In some embodiments, selective electroless plating for electronic substrates is presented. In this regard, a method is introduced including receiving a coreless substrate strip, forming a stiffening mold on a backside of the coreless substrate strip adjacent to sites where solder balls are to be attached, and attaching solder balls to the backside of the coreless substrate strip amongst the stiffening mold. Other embodiments are also disclosed and claimed.

Abstract: A memory module of the present invention has a memory core chip for storing information, an interface chip for controlling data input/output, an interposer chip for transmitting/receiving data to/from the outside, and an external connection terminal provided in closest proximity to the interposer chip. A heat dissipating plate is provided in closest proximity to the interface chip. The interposer chip has a substrate made of a semiconductor material that is similar to the memory core chip, a land for holding the external connection terminal, a wire connected to the external connection terminal, and an insulating film for insulating the wire. The land, wire, and insulating film are integrally formed on one surface of the interposer chip.

Abstract: A packaged semiconductor device (a wafer-level chip scale package) containing a conductive adhesive material as an electrical interconnect route between the semiconductor die and a patterned conductive substrate is described. The patterned conductive substrate acts not only as a substrate, but also as a redistribution layer that converts the dense pad layout of the die to a larger array configuration of the solder balls in the circuit board. Using the invention allows the formation of a lower priced chip scale package that also overcomes the restriction of the die size used in die-sized chip packages and the input-output pattern that can be required by the printed circuit board. Thus, the invention can provide a familiar pitch (i.e., interface) to the printed circuit board for any small die.

Abstract: A non-reactive monomer mixture contains a monomer component and a diaryl carbonate dispersed in the mixture. The monomer component includes one or more monomer compounds having a melting point below the melting point of the diaryl carbonate. The monomer component has less than 600 ppb alkali metal, an acid stabilizer, or both less than 600 ppb alkali metal and an acid stabilizer. The monomer compounds of the monomer component and the diaryl carbonate are present in a mole ratio of from 0.9 to 1.1. The monomer mixture is at a temperature between the melting temperature of the lowest melting monomer compound and less than 5° C. above the melting point of the diaryl carbonate.

Abstract: This semiconductor device includes a semiconductor chip, and a lead arranged around the semiconductor chip to extend in a direction intersecting with the side surface of the semiconductor chip, and having at least an end farther from the semiconductor chip bonded to a package board, wherein a joint surface to the package board and an end surface orthogonal to the joint surface are formed on the end of the lead farther from the semiconductor chip, and a metal plating layer made of a pure metal is formed on the end surface.

Abstract: Disclosed herein is a method of manufacturing a semiconductor package with a solder standoff on lead pads that reach to the edge of the package (non-pullback leads). It includes encapsulating a plurality of die on a lead frame strip. The lead frame strip comprises a plurality of package sites, which further comprises a plurality of lead pads and a die pad. The method also includes forming a channel between the lead pads of nearby package sites without singulating the packages. Another step in the method includes disposing solder on the lead pads, the die pad, or the lead pads and the die pads without substantially covering the channel with solder. The manufacturing method further includes singulating the packages.

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, the invention provides a microelectronic component assembly that includes spaced-apart first and second lead frame members. A packaged element is disposed between the lead frame members and attached thereto only by a plurality of elongate, flexible links that permit the packaged element to accommodate thermally induced stresses by floating with respect to the first and second lead frame members.

Abstract: In one embodiment, a method for forming a molded flat pack style package includes attaching electronic chips to an array lead frame, which includes a plurality of elongated flag portions with tab portions and a plurality of leads. The method further includes connecting the electronic chips to specific leads, and then molding the array lead frame while leaving portions of the leads exposed to form a molded array structure. The molded array structure is then separated to provide molded flat pack style packages having exposed leads for insertion mount and exposed tab portions. In an alternative embodiment, the separation step produces a no-lead configuration with exposed tab portions.

Abstract: A side view type light emitting diode and a method of manufacturing the same are disclosed. The method may include (a) providing lead frames which include a cathode terminal and an anode terminal, (b) forming a reflector which surrounds the lead frames, such that portions of the cathode terminal and anode terminal protrude from both sides, and which includes a groove open in the upward direction and a wall surrounding the groove, (c) die-attaching an LED chip onto the lead frames inside the groove, (d) bonding the LED chip to the cathode terminal or to the anode terminal with a conductive wire, (e) dispensing a liquid curable resin into the groove to form a lens part and (f) sawing the walls facing each other using a sawing machine such that the thicknesses at the upper surfaces are about 0.04 mm to about 0.05 mm.

Abstract: A process for fabricating a leadless plastic chip carrier. A first surface of a leadframe strip is selectively etched to thereby provide depressions in the first surface and metal contacts are deposited in the depressions in the first surface of the leadframe strip. At least one layer of metal is selectively plated on at least the metal contacts to provide a plurality of selectively plated contact pads and a die attach pad. A semiconductor die is mounted on the first surface of the die attach pad and the semiconductor die is wire bonded to ones of the contact pads. The wire bonds and the semiconductor die are encapsulated in a molding material such that the molding material covers the die attach pad and the contact pads. The leadframe strip is etched away thereby exposing the metal contacts in the form of an array and the leadless plastic chip carrier is singulated from other leadless plastic chip carriers.

Abstract: A substrate structure of a secure digital input/output module interface and its manufacturing method are disclosed herein. First, a substrate is provided, wherein the substrate has a plurality of conductive contact portions abreast arranged on a lower surface of the substrate. Next, a lead frame with a side rail and a plurality of fingers abrest arranged thereon is provided, wherein any one of those fingers has an internal contact and an external contact. Then, those internal contacts of those fingers are electrically connected to those conductive contact portions of the substrate. Further, a sigulation process and a molding process are provided to form a single structure of secure digital interface module. Those fingers of the lead frame are positioned one-on-one to those conductive contact portions of the substrate to improve the mechanical properties and reduce the size of the substrate.

Abstract: A lead frame (52, 100, 112) for a semiconductor device (die) package (50, 102, 110) is described. Each of the leads (60) in the lead frame (52, 100, 112) includes an interposer (64) having one end (66) disposed proximate the outer face (58) of the package (50, 102, 110) and another end (68) disposed proximate the die (14). Extending from opposite ends of the interposer (64) are a board connecting post (70) and a support post (74). A bond site (78) is formed on a surface of the interposer (64) opposite the support post (74). Each of the leads (60) is electrically connected to an associated input/output (I/O) pad (80) on the die (14) via wirebonding, tape bonding, or flip-chip attachment to the bond site (78). Where wirebonding is used, a wire electrically connecting the I/O pad (80) to the bond site (78) may be wedge bonded to both the I/O pad (80) and the bond site (78). The support post (74) provides support to the end (68) of the interposer (64) during the bonding and coating processes.(FIG. 3).

Abstract: An integrated circuit package-on-package stacking method includes forming a leadframe interposer including: forming a leadframe having a lead; forming a molded base only supporting the lead; and singulating the leadframe interposer from the leadframe.

Abstract: A semiconductor device having a plurality of semiconductor chips mounted on lead frames is miniaturized by reducing its planar size and thickness. By disposing a rear surface of a first island and a top surface of a second island so as to at least partially overlap each other, a first semiconductor chip on the first island and a second semiconductor chip on a rear surface of the second island are configured so as to overlap each other. Accordingly, a planar occupied area can be set smaller than planar areas of both of the chips. Moreover, thin metal wires to be connected to the second semiconductor chip are extended to a back side. Consequently, a thickness of a semiconductor device can also be reduced.

Abstract: An integrated circuit package-on-package stacking system is provided including, forming a leadframe interposer including: forming a leadframe; forming a molded base on the leadframe; and singulating the leadframe interposer from the leadframe.

Abstract: A manufacturing method of a semiconductor device including preparing a lead frame having a die pad, leads arranged around the die pad and a silver plating layer formed over a first portion of each of the leads, mounting a semiconductor chip over a main surface of the die pad with a rear surface of the chip fixed to the main surface of the die pad, electrically connecting electrodes of the chip with the leads through wires, forming a molding resin sealing the die pad, the first portion, the semiconductor chip, and the wires, and forming a lead-free solder plating layer over a second portion of each of the leads exposed from the molding resin. An area of the die pad is smaller than an area of the chip, and a part of the molding resin contacts with the rear surface of the chip exposed from the die pad.

Abstract: A method and apparatus for handling and positioning half plated balls for socket application in ball grid array packages. The half plated balls, comprising a first side adapted to be soldered and a second side adapted to establish reliable solderless electrical contact, are embedded in a soft foil, with a common orientation. The soft foil is positioned on a clam-receiving tool and a vacuumed caved cover clam is fitted on the balls and then pushed to cut and separate the polymer sheet from the copper ball surface. The vacuumed caved cover clam is then lifted with the oriented copper balls entrapped inside and the vacuumed caved cover clam places the entrapped balls on the laminate pads, with a deposit of low melt alloy. The air vacuum is deactivated and the cover is lifted, leaving the balls positioned on the pads while the soldering process is initiated and solder joints are formed to fix the balls.

Abstract: The method of the present invention includes a first step of preparing a substrate in which a plurality of circuit boards are integrally connected to one another, each of the circuit boards having conductive patterns which include pads formed on a surface of the circuit board; a second step of electrically connecting circuit elements to the respective conductive patterns on each of the circuit boards; a third step of positioning ends of leads above the respective pads by superposing a lead frame including the plurality of leads on the substrate, and fixing the leads to the pads; and a fourth step of separating the circuit boards from the substrate in a state where the leads are fixed to the respective pads on each of the circuit boards, and thus separating the leads from the lead frame.

Abstract: A leadframe is plated with palladium only to a surface of a metal plate on which semiconductors elements are to be mounted and a surface of the metal plate to be placed on a substrate, and is not plated with palladium to lead portions, pad portions, other portions except for the surfaces to be plated and the side surface, of the leadframe, thereby, the amount of use of palladium is reduced to minimum and a cheap leadframe can be provided.

Abstract: A lead forming apparatus has a function of bending leads of a semiconductor device having leads into a gull wing shape. The lead forming apparatus includes: a lead bending die, as a lower die, allowing thereon placement of the semiconductor device and accepting the leads in the bending leads; a lead bending punch, as an upper die, descending towards the lead bending die so as to move the leads of the semiconductor device towards the lead bending die, to thereby bend the leads into a gull wing shape; and a first stopper specifying the bottom dead center of the lead bending punch, so as to ensure a distance not smaller than thickness of the leads between the bottom surface of the lead bending punch and the top surface of a portion, allowing thereon placement of the leads, of the lead bending die.

Abstract: The object of the present invention is to provide an adhesion film for semiconductor that is capable of bonding a semiconductor chip to a lead frame tightly at an adhesion temperature lower than that of the adhesion film of a traditional polyimide resin without generation of voids and that can also be used for protection of lead frame-exposed area, a thermoplastic resin composition for semiconductor for use in the adhesive agent layer therein, and a lead frame having the adhesive film and a semiconductor device; and, to achieve the object, the present invention provides a thermoplastic resin composition for semiconductor, comprising a thermoplastic resin obtained in reaction of an amine component containing an aromatic diamine mixture (A) containing 1,3-bis(3-aminophenoxy)benzene, 3-(3?-(3?-aminophenoxy)phenyl)amino-1-(3?-(3?-aminophenoxy)phenoxy)benzene and 3,3?-bis(3?-aminophenoxy)diphenylether, and an acid component (C), an adhesion film for semiconductor using the same, a lead frame having the adhesion fi

Abstract: A method for manufacturing a semiconductor device includes preparing a wiring board including a base board having a first surface and a second surface, a wiring pattern having a plurality of electrical connectors and formed on the first surface, a first resist layer having a first opening for exposing the electrical connectors and partially covering the first surface and the wiring pattern, and a second resist layer having a second opening that overlaps with a region where the electrical connectors are formed and partially covering the second surface; preparing a semiconductor chip having a plurality of electrodes; and performing a bonding operation for electrically coupling the plurality of electrical connectors and the plurality of electrodes correspondingly by holding and heating the semiconductor chip with a bonding tool that has a heating mechanism and an end face whose contour is smaller than that of the second opening, aligning the bonding tool in such a way that the end face only overlaps with a regio

Abstract: An integrated circuit (IC) chip, mounted on a leadframe, has a network of power distribution lines deposited on the surface of the chip so that these lines are located over active components of the IC, connected vertically by metal-filled vias to selected active components below the lines, and also by conductors to segments of the leadframe. Furthermore, the lines are fabricated with a sheet resistance of less than 1.5 m?/· and the majority of the lines is patterned as straight lines between the vias and the conductors, respectively.

Abstract: A method of making a microelectronic package. The method includes: providing a carrier; providing a tacky pad on the carrier; placing a die onto the tacky pad such that an active surface of the die adheres to the tacky pad, bonding an IHS onto a backside of the die after placing to form a die-IHS combination, removing the die-IHS combination from the tacky pad; and mounting the die-IHS combination onto a package substrate to form the package.

Abstract: A method for manufacturing a light emitting chip package includes bonding a patterned metal plate having at least a thermal enhanced plate and many contacts around the same to a substrate and bonding a film-like circuit layer to the patterned metal plate. Many conductive wires are formed to connect the film-like circuit layer and the contacts. Thereafter, at least a first molding is formed on the substrate to encapsulate the patterned metal plate, the conductive wires and a portion of the film-like circuit layer. At least one light emitting chip disposed on the film-like circuit layer exposed by the first molding has many bumps to which the light emitting chip and the film-like circuit layer are electrically connected. A cutting process is performed to form at least one light emitting chip package, and the substrate is removed. Therefore, heat dissipation efficiency of the light emitting chip package can be improved.

Abstract: In accordance with the present invention, there is provided various methods of simultaneously fabricating a plurality of semiconductor packages (e.g., cavity type semiconductor packages) wherein the singulation process is achieved using etching techniques as opposed to more conventional cutting techniques such as sawing or punching. Such etching techniques are inherently lower in cost and free from many of the defects induced by other cutting techniques.

Abstract: A leadframe with a structure made of a base metal (105), wherein the structure has a plurality of surfaces. On each of these surfaces are metal layers in a stack adherent to the base metal. The stack comprises a nickel layer (201) in contact with the base metal, a palladium layer (202) in contact with the nickel layer, and an outermost tin layer (203) in contact with the palladium layer. In terms of preferred layer thicknesses, the nickel layer is between about 0.5 and 2.0 ?m thick, the palladium layer between about 5 and 150 nm thick, and the tin layer less than about 5 nm thick, preferably about 3 nm. At this thinness, the tin has no capability of forming whiskers, but offers superb adhesion to polymeric encapsulation materials, improved characteristics for reliable stitch bonding as well as affinity to reflow metals (solders).

Abstract: Means for forming a package is disclosed on which is mounted a semiconductor chip with a high-speed LSI formed thereon, using a wire bonding method. The package comprises a semiconductor chip, a die pad smaller than a main surface of the semiconductor chip, a sealing member, plural leads each comprising an outer terminal portion and an inner lead portion, and plural bonding wires for connection between bonding pads formed on the semiconductor chip and the inner lead portions of the leads, each of the inner lead portions being bent in a direction away from a mounting surface of the sealing member, thereby approximating the height of the chip-side bonding pads and that of a bonding position of the inner lead portions to each other, whereby the wire length can be made shorter and it is possible to suppress an increase in inductance of the wire portions and attain impedance matching at various portion of a high-frequency signal input/output transmission path.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively. the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is attached to a first semiconductor die and a second conductive strip that is attached to a second semiconductor die.

Abstract: Systems and methods for preventing damage to a unit with preventive structures are presented. In an embodiment, a unit of a collection of units includes a functional area and a preventive structure configured to prevent cracks from propagating into the functional area.

Abstract: Efficient utilization of space in a laterally-conducting semiconductor device package is enhanced by creating at least one supplemental downbond pad portion of the diepad for receiving the downbond wire from the ground contact of the device. The supplemental diepad portion may occupy area at the end or side of the package formerly occupied by non-integral leads. By receiving the substrate downbond wire, the supplemental diepad portion allows a greater area of the main diepad to be occupied by a die having a larger area, thereby enhancing space efficiency of the package.

Abstract: A semiconductor module is disclosed. One embodiment provides a first electrically conductive carrier composed of a first material, a second electrically conductive carrier composed of the first material, an electrically insulating element composed of a second material, which connects the first carrier and the second carrier to one another, a first semiconductor substrate applied to the first carrier, a second semiconductor substrate applied to the second carrier, and an electrically conductive layer applied above the first carrier, the second carrier and the insulating element. The electrically conductive layer electrically conductively connects the first semiconductor substrate to the second semiconductor substrate.

Abstract: In one embodiment of the invention, a lead-frame is designed for use in IC packages such as those conforming to the TO 220 standard or other standards for power packages. The device areas of the lead-frame are arranged in columns, and each column is molded so as to expose a portion of the leads. The device areas can then be cingulated by sawing, as in conventional QFN packages. In this manner, packages conforming to power package standards such as the TO 220 standard can be produced much quicker and cheaper than they can in conventional trim and forming methods.

Abstract: A plurality of inner leads, a plurality of outer leads formed in one with each of the inner lead, a bar lead of the square ring shape arranged inside a plurality of inner leads, a corner part lead which has been arranged between the inner leads of the end portion of the inner lead groups which adjoin among four inner lead groups corresponding to each side of the bar lead, and was connected with the bar lead, and a tape member joined to the tip part of each inner lead, a bar lead, and a corner part lead are included. Since the corner part lead is formed as an object for reinforcement of a frame body between adjoining inner lead groups, the rigidity of the lead frame can be increased.

Abstract: A method of connecting stranded wire to a lead-frame body 10 includes the provision of a stranded wire 12. It is ensured that insulation is stripped from an end 14 of the stranded wire. An electrically conductive lead-frame connection structure 16 is associated with the lead-frame body. The end 14 of the stranded wire is inserted into the lead-frame connection structure 16 so that the lead-frame connection structure substantially surrounds the wire end. Solder flux is injected so as to be substantially about a portion of the end of the stranded wire. The lead-frame connection structure is placed in contact with a bottom resistance welding electrode 18 or a top resistance welding electrode 20.

Abstract: A method of producing a leadframe is provided, the method including the steps of providing a substrate, plating the substrate with a layer of tin, plating a layer of nickel over the layer of tin, and thereafter plating one or more protective layers over the layer of nickel. The leadframe may thereafter be heated to produce one or more intermetallic layers comprising tin, which impedes the out-diffusion of copper from a base material of the leadframe to the surface thereof.

Abstract: A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a conductive flat substrate (metal plate) of copper plate or the like, fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive, electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate separate from the semiconductor elements by conductive wires, forming an insulating resin layer on the principal surface of the substrate to cover the semiconductor elements and wires, selectively removing the substrate from the rear of said substrate to form electrically independent partition parts whereof at least some are external electrode terminals, and selectively removing said resin layer to fragment the device into regions containing the semiconductor elements and the plural partition parts around the semiconductor elements.

Abstract: A packaging method for an electronic element has: etching portions of a top surface of a metal board to form recesses between raised unetched segments and filling the recesses with a dielectric material of high density polymer; forming multiple solder balls respectively on the raised unetched segments; coating the solder balls with a thin flux layer; bonding contacts on a die respectively to the solder balls with the thin flux layer; injecting an encapsulant between the die and the metal board; sealing the die with an outer encapsulant; etching a bottom surface of the metal board to form multiple metal leads; coating the bottom surface of the metal board other than the metal leads with a solder resist; and conducting a continuity test. The solder balls are not formed directly on the fragile die so the packaging method can be used with any types of dies and has a good applicability.

Abstract: Provided are wafer level package with a sealing line that seals a device and includes electroconductive patterns as an electrical connection structure for the device, and a method of packaging the same. In the wafer level package, a device substrate includes a device region, where a device is mounted, on the top surface. A sealing line includes a plurality of non-electroconductive patterns and a plurality of electroconductive patterns, and seals the device region. A cap substrate includes a plurality of vias respectively connected to the electroconductive patterns and is attached to the device substrate by the sealing line. Therefore, a simplified wafer level package structure that accomplishes electric connection through electroconductive patterns of a sealing line can be formed without providing an electrode pad for electric connection with a device.

Abstract: A semiconductor die assembly comprising a semiconductor die with bond pads, a plurality of leads which extend across the semiconductor die and terminates over their respective bond pads, and an alpha barrier preferably positioned between the leads and the semiconductor die. Electrical connection is made between the leads and their respective bond pads by a strip of anisotropically conductive elastomeric material, preferably a multi-layer laminate consisting of alternating parallel sheets of a conductive foil and an insulating elastomer wherein the laminate layers are oriented perpendicular to both the bond pad and the lead, positioned between the leads and the bond pads. A burn-in die according to the present invention is also disclosed.

Abstract: Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.

Abstract: A method to assemble a non-leaded semiconductor package (1) comprises the following steps. A carrier tape (13) is attached to a metal foil (12). A plurality of leadframes (3) is formed in the metal foil (12), each leadframe (3) comprising a die pad (4) laterally surrounded by a plurality of contact leads (5). A semiconductor die (2), including an active surface with a plurality of die contact pads (7), is attached to each die attach pad (4) and electrically connected to the leadframe (3) by a plurality of bond wires (9) connecting the die contact pads (7) and the lead contact areas (6) of the contact leads (5). A plurality of leadframes (3), each including a wire bonded semiconductor die, are encapsulated with mold material (10). The carrier tape (13) is removed and the non-leaded semiconductor packages (1) separated.

Abstract: A method of reducing mechanical stress on an integrated circuit is disclosed including applying solder columns to the substrate for adding structural support to the package during the fabrication process.

Abstract: A tape carrier includes: a base film with insulating property; a wiring pattern provided on the base film within a product region, the product region being demarcated by a cutting line so as to divide the tape carrier into individual products by cutting along the tape carrier along the cut line; and a solder resist provided on the base film so as to cover the wiring pattern. The solder resist protrudes outward from within the product region.

Abstract: A semiconductor module (1) which has semiconductor chips (2) each with one power supply electrode (6, 7) on its back, respectively for applying a supply potential (4, 5) and each with a power output electrode (8, 9) on its top side, respectively for transferring an output current to power outputs (10, 11, 12) of the semiconductor module (1). Furthermore, the semiconductor chips (2) have control electrodes (14, 15) for switching the semiconductor component. The semiconductor module has on its underside leads with supply leads on which the semiconductor chips (2, 3) are arranged with their power supply electrodes (6, 7). In addition, output leads (22, 23, 24) are effectively connected to the power output electrodes (8, 9). Finally, signal leads (25, 26, 27), which are effectively connected to the control electrodes (14, 15) or the power output electrodes (8, 9) are arranged on the underside of the semiconductor modules.

Abstract: A package substrate strip having a reserved plating bar and a metal surface treatment method thereof are provided. The metal surface treatment method forms a conductive layer connecting the reserved plating bar and bonding pads of the package substrate stripe and further forms an isolating layer covering the conductive layer. By original plating bars and the reserved plating bar, an anti-oxidation layer can be simultaneously formed on finger contacts, first ball pads electrically connected to the finger contacts, and second ball pads electrically connected to the bonding pads. The package substrate strip and the method for metal surface treatment thereof can simplify manufacturing process, reduce production cost, and improve production efficiency and yield. Furthermore, a chip package applying the package substrate strip is also provided.

Abstract: A plurality of individual MEMS packages are formed as a contiguous unit and each of the plurality of individual MEMS packages include at least one acoustic port. One or more separation boundaries from where to separate adjacent ones of the plurality of individual MEMS packages are determined. Each of the plurality of individual MEMS packages are subsequently separated from the others according to the one or more separation boundaries to provide separate and distinct individual MEMS packages. Each acoustic port disposed within each separate and distinct individual MEMS package is exposed due to the separating so as to allow sound energy to enter each separate and distinct individual MEMS package.