Abstract: The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of the ceramic green sheet substrate, and firing the ceramic green sheet substrate.

Abstract: An infrared detector comprises: a reflection portion which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a plurality of layered quantum well structures into each of which electrons of the photo-current generated by the photo-current generating portion are injected and in each of which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion which detects the near-infrared and visible rays emitted from the light emitting portion and which detects the near-infrared and visible rays emitted from the light emitting portion and then reflected by the reflection portion.

Abstract: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

Abstract: In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time thermal requirements may be less critical.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band.

Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer.

Abstract: A photoconductor having a layer stack (72) with a semiconductor layer (64) photoconductive for a predetermined wavelength range between two semiconductor boundary layers (62) with a larger band gap than the photoconductive semiconductor layer (64) on a substrate (60), wherein the semiconductor boundary layers (62) have deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer (64), and two electrodes connected to the photoconductive semiconductor layer (64), for lateral current flow between the electrodes through the photoconductive semiconductor layer (64).

Abstract: An organic light emitting display device capable of hermetically sealing a space between a deposition substrate and an encapsulation substrate with inorganic sealing materials is disclosed. One embodiment of the organic light emitting display device includes a first substrate including power supply lines formed on an array, and a circumference of the array, of an organic light emitting diode, and connected to a pad unit through the power pad line to supply a power source to each of the organic light emitting diodes; a second substrate arranged on at least the array of the first substrate; and an inorganic sealing material for sealing an inner space between the first substrate and the second substrate while forming a closed boundary, wherein the inorganic sealing material is not overlapped with a region in which the power supply line is formed.

Abstract: Light emitting chips, light emitting unit cells and methods of forming light emitting chips are provided. A light emitting chip includes a light emission structure having a p-type semiconductor layer, an n-type semiconductor layer, and an active layer therebetween. At least one light emitting unit is formed from the light emission structure including a light emitting diode (LED) and a plurality of light receiving diode (LRD) portions. The LRD portions are serially connected and configured to surround the LED portion. The LRD portions are optically coupled to the LED portion to receive total internal reflection (TIR) light from the LED portion and convert the TIR light to a photocurrent.

Abstract: An organic light emitting display device with a touch screen function, the apparatus including a first substrate including a pixel region and a nonpixel region, a second substrate disposed above the first substrate so as to be spaced apart from the first substrate, a plurality of pixel units disposed in the pixel region, and a sensor unit disposed in the nonpixel region and detecting light, where each of the plurality of pixel units includes a red subpixel, a green subpixel and a blue subpixel, and the red subpixel is arranged so as not to be adjacent to the sensor unit.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: The present disclosure describes an optically powered transducer with a photovoltaic collector. An optical fiber power delivery method and system and a free space power delivery method are also provided. A fabrication process for making an optically powered transducer is further described, together with an implantable transducer system based on optical power delivery.

Abstract: An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.

Abstract: A semiconductor device includes: a semiconductor substrate having an imaging region in which a plurality of photoreceptors are arranged, and a peripheral circuit region arranged around the imaging region; a plurality of microlenses formed on the imaging region; a low-refractive-index film formed on the semiconductor substrate to cover the plurality of microlenses and part of the peripheral circuit region; and a transparent substrate formed on part of the low-refractive-index film above the imaging region. A through hole is formed in part of the low-refractive-index film above an amplifier circuit arranged in the peripheral circuit region.

Abstract: According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion of the gate insulating film where is not located under the semiconductor layer is removed during manufacturing steps of the present invention.

Abstract: According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated within the recess portion. Wiring traces are formed on the upper surface of a resin which seals the LSI chip connected to the multilayer wiring. The wiring traces are connected to terminal wiring traces connected to the multilayer wiring on the front face of the package substrate and to front-face bump electrodes for external connection on the upper surface of the resin. On the back face side of the package substrate, back-face bump electrodes for external connection are formed and connected to the multilayer wiring.

Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

Abstract: Quantitative understanding of neural and biological activity at a sub-millimeter scale requires an integrated probe platform that combines biomarker sensors together with electrical stimulus/recording sites. Optically addressed biomarker sensors within such an integrated probe platform allows remote interrogation from the activity being measured. Monolithic or hybrid integrated silicon probe platforms would beneficially allow for accurate control of neural prosthetics, brain machine interfaces, etc as well as helping with complex brain diseases and disorders. According to the invention a silicon probe platform is provided employing ultra-thin silicon in conjunction with optical waveguides, optoelectronic interfaces, porous filter elements, and integrated CMOS circuitry. Such probes allowing simultaneously analysis of both neural electrical activities along with chemical activity derived from multiple biomolecular sensors with porous membrane filters.

Abstract: A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.

Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Abstract: The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of the ceramic green sheet substrate, and firing the ceramic green sheet substrate.

Abstract: The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.

Abstract: An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).

Abstract: A liquid crystal display device comprises a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light from the surroundings, wherein the photosensor includes a semiconductor layer formed on the second substrate and provided with n+-type ion implantation region, ion non-implantation region and lightly doped region; an insulation film, formed on the second substrate, for covering the semiconductor layer; a passivation film, formed on the second substrate, for covering the insulation film; a first contact hole passing through the insulation film and the passivation film, to expose source and drain regions of the semiconductor layer; source and drain electrodes connected with the source and drain regions of the semiconductor layer through the first contact hole; an ion implanting prevention film formed on the insulation film and overlapped with the ion non-i

Abstract: In order to ensure an even image quality of digital X-ray recordings, provision is made for an X-ray detector with light-sensitive pixel elements arranged in an active readout matrix and with a reset-light source arranged therebehind in the radiation direction of X-ray radiation, wherein the reset-light source is designed as a planar OLED (organic light-emitting diode) matrix applied to a film.

Abstract: A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels.

Abstract: A near-field surface plasmon detector is provided. The near-field surface plasmon detector includes one or more semiconductor layers that absorb one or more surface plasmons of thin metal films in the vicinity of the semiconductor layer. The surface plasmons are excited by incoming light being emitted from a light emitting source. The metal films are also employed as electrical contacts used to capture photocurrent generated after absorption of surface plasmons by the semiconductor layers.

Abstract: The monolithic application of a high speed TWPDA with impedance matching. Use of the high speed monolithic TWPDA will allow for more efficient transfer of optical signals within analog circuits and over distances.

Abstract: The device for detection and/or emission of radiation has an encapsulation micropackage in a vacuum or under reduced pressure that comprises a cap and a substrate delineating a sealed housing. The housing encapsulates at least one uncooled thermal detector and/or emitter having a membrane sensitive to electromagnetic radiation suspended above the substrate, a reflector and at least one getter. The getter is arranged on at least a part of a second main surface of the reflector to form a reflector/getter assembly. A free space, releasing an accessible surface of the getter and in communication with the housing, is also formed between the reflector/getter assembly and the front surface of the substrate.

Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.

Abstract: The present invention relates to a method of fabricating a high power light-emitting device using an electrolessly or electrolytically plated metal composite heat dissipation substrate having a high thermal conductivity and a thermal expansion coefficient matching with the device.

Abstract: Disclosed is a light-emitting diode package. The light-emitting diode package includes an electrode pad on which a chip is placed; a housing having a window through which the chip is exposed; a housing wall defining the window; and an electrode lead extended from the electrode pad in a direction of the housing to be exposed outside a surface of the housing, wherein the housing wall formed in the direction comprises a first portion and a second portion thicker than the first portion to cover the electrode lead.

Abstract: An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.

Abstract: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: A lens forming method according to the present invention for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting of a semiconductor apparatus is described. The method includes a lens forming step of processing a lens forming material, in which an average gradient of a ? curve indicating a residual film thickness with respect to the amount of irradiation light is between ?15 and ?0.8 nm·cm2/mJ within the range of a residual film ratio of 10 to 50% or within the range of the amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to a lens surface shape, as an exposure mask.

Abstract: A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

Abstract: An optical waveguide, an optical printed circuit board equipped with the optical waveguide, and methods of manufacturing the optical waveguide and the optical printed circuit board are disclosed. The optical waveguide can include: a first cladding layer; a core formed on the first cladding layer; an alignment pattern, having a predefined positional relationship to the core, formed on the first cladding layer; a target mark formed on the alignment pattern to indicate a position of the alignment pattern; and a second cladding layer formed on the first cladding layer to cover the core, the alignment pattern, and the target mark. In such an optical waveguide, circuit patterns, etc., formed over the second cladding layer may be precisely and efficiently aligned with the core.

Abstract: A silicon biosensor and a manufacturing method thereof is provided, the silicon biosensor includes: a light source performing self emission a light detector generating a photoelectric current corresponding to an amount of incident light an optical fiber transmitting the light from the light source to the light detector and a micro fluidic channel adjusting an optical transmission rate of the optical fiber according to an antibody-antigen reaction when the antibody-antigen reaction occurs. The silicon biosensor can be easily integrated or bonded with a silicon electronic device, so that it is possible to manufacture the biosensor with a low price, under mass production.

Abstract: A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of the substrate to enable electric or electronic access to the electronic component through the monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the electronic component.

Abstract: A GaN-based semiconductor light-emitting device 1 includes a stacked body 10A having the component layers 12 that include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layer 14 made of metal and a second bonding layer 33 formed on an electroconductive substrate 31, adapted to have bonded to the first bonding layer 14 the surface thereof lying opposite the side on which the electroconductive substrate 31 is formed, made of a metal of the same crystal structure as the first bonding layer 14, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.

Abstract: A silicon biosensor and a method of manufacturing the same are provided. The silicon biosensor includes: a light emitting layer emitting light according to injected electrons and holes and changing a wavelength of the light depending on whether a biomaterial is absorbed by the light emitting layer; an electron injection layer injecting the electrons into the light emitting layer; and a hole injection layer injecting the holes into the light emitting layer. Accordingly, it is possible to produce low price biosensors in large quantities.

Abstract: An optical sensor device comprises a light source, a light detector, and an opaque light barrier including a first portion to block light from being transmitted directly from the source to the detector. A second portion of the light barrier extends from the first portion in a direction towards the light source, such that a portion of the second portion covers at least a portion of light emitting element(s) of the source, to reduce an amount of specular reflections, if a light transmissive cover plate were placed over the sensor. Additionally, a third portion of the barrier can extend from the first portion, in a direction towards to the detector, such that a portion of the third portion covers at least a portion of light detecting element(s) of the detector, to reduce an amount of specular reflections that would be detected by the detecting element(s) of the detector, if a light transmissive cover plate were placed over the sensor. Additionally, an off-centered lens can cover a portion of the light source.

Abstract: A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.

Abstract: Light device comprising a substrate, at least one photo-organic layer, at least two electrode layers electrically separated by said at least one photo-organic layer, and at least one encapsulation layer, wherein said at least one photo-organic layer is positioned between said substrate and said at least one encapsulating layer, and wherein multiple openings are provided that extend through the light device to allow fluids and or heat to pass through, said openings being spaced apart from said at least one photo-organic layer.

Abstract: A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a regio

Abstract: Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces are disclosed herein. In one embodiment, a method for forming microlenses includes forming a plurality of shaping members on a microfeature workpiece between adjacent pixels, reflowing the shaping members to form a shaping structure between adjacent pixels, depositing lens material onto the workpiece, removing selected portions of the lens material adjacent to the shaping structure such that discrete masses of lens material are located over corresponding pixels, and heating the workpiece to reflow the discrete masses of lens material and form a plurality of microlenses.

Abstract: The invention is to provide a semiconductor light-emitting device package structure. The semiconductor light-emitting device package structure includes a substrate, N sub-mounts and N semiconductor light-emitting die modules, where N is a positive integer lager than or equal to 2. Each of the sub-mounts is embedded on the substrate and exposed partially. Each of the semiconductor light-emitting die modules is mounted on the exposed surface of one of the sub-mounts.

Abstract: A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for erasing the metal-insulator-metal memory cell.