Abstract: A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.

Abstract: A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C.

Abstract: Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

Abstract: Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.

Abstract: A group-III nitride solar cell is grown on a thin piece of a group-III nitride crystal that has been mounted on a carrier comprised of a foreign material. The thin piece is a thin layer with a thickness that ranges from approximately 5 microns to approximately 300 microns.

Abstract: A method for a controlled dispensing of mercury by mercury sources that release mercury at a temperature Te, the sources being kept at a conditioning temperature Tc<Te and being brought to a temperature T>Te by means of displacement of the mercury sources.

Abstract: Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.

Abstract: Methods of and apparatuses for making a photovoltaic cell are provided. The photovoltaic cell is able to have a substrate made of a composite material. The composite material is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The substrate of the photovoltaic cell is able to be flexible, such that the photovoltaic cell is able to be applied on various surfaces.

Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.

Abstract: An organic solar cell and a method of manufacturing the same.

Abstract: Methods of fabricating photovoltaic devices include forming a plurality of subcells in a vertically stacked arrangement on the semiconductor material, each of the subcells being formed at a different temperature than an adjacent subcell such that the adjacent subcells have differing effective band-gaps. The methods of fabricating also include inverting the structure, attaching another substrate to the second semiconductor material, and removing the substrate. For example, each of the subcells may comprise a III-nitride material, and each subsequent subcell may include an indium content different than the adjacent subcell. Novel structures may be formed using such methods.

Abstract: An organic solar cell and a method of manufacturing the same.

Abstract: A substrate includes a semiconductor layer, a plurality of dielectric layers disposed on one side of the semiconductor layer and separated from each other and a photoactive layer disposed between the dielectric layers and including a compound of a Group III element and a Group V element. Also disclosed are a solar cell including the same and a manufacturing method thereof.

Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle ? of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as ?.

Abstract: A dilute nitrogen alloy of InNxSb1-x epilayers strained to an epitaxial substrate useful for Long Wavelength Infrared (LWIR) Focal Plane Arrays, and method of fabricating. Strained materials of composition InNxSb1-x exhibiting increased Auger lifetimes and improved absorption properties.

Abstract: A method for bandgap shift and phase transformation for titania structures. The method can include providing a flexible substrate, depositing a titania film onto the substrate, and exposing the titania film to one or more pulses of infrared energy of sufficient energy density and for a sufficient time to crystallize the titania film to predominantly anatase crystalline phase. The flexible substrate can be formed from a polymeric material, and the method can achieve a bandgap shift from greater than 3.0 eV to approximately 2.4 eV. The method can also include forming a crystalline titania layer over a substrate and annealing the crystalline titania layer by applying pulsed thermal energy sufficient to modify the phase constitution of the crystalline titania layer. The source of pulsed thermal energy can include an infrared flashlamp or laser, and the resulting titania structure can be used with photovoltaic and photoelectrolysis systems.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: Disclosed is a method of fabricating a thin film solar cell including introducing a reaction solution into a reaction chamber, fixing a supporter onto a loader, disposing the loader in the reaction chamber to immerse the supporter into the reaction solution, and heating the supporter and coating a buffer layer. In addition, an apparatus of fabricating a thin film solar cell including a reaction chamber mounted with an inlet of a reaction solution and an outlet of waste water, and a loader disposed in the reaction chamber and being capable of moving up and down, is disclosed.

Abstract: A solar cell with improved energy efficiency is presented. The solar cell includes a substrate having a plurality of cell areas separated by a cell separation area, back electrodes spaced apart from each other by a gap, a light absorbing layer, a transparent electrode layer, and a buffer layer. Each of the back electrodes is disposed over neighboring cell areas and a cell separation area. The light absorbing layer is disposed on the back electrodes and in the gap to absorb incident light. A contact hole extends through the light absorbing layer to a portion of the back electrodes. The transparent electrode layer disposed on the light absorbing layer connects to the back electrodes through the contact hole. The buffer layer is disposed between the light absorbing layer and the transparent electrode layer to cover upper and side surfaces of the light absorbing layer.

Abstract: According to one embodiment, there is provided an organic photovoltaic cell including substrate having a plurality of inclined surfaces and a plurality of solar cells formed on the inclined surfaces of the substrate. Each of the solar cells includes a pair of electrodes and a bulk heterojunction active layer interposed between the electrodes, the active layer containing a p-type organic semiconductor and an n-type organic semiconductor. An inclination of each of the inclined surfaces of the substrate against the horizontal plane is in the range of 60 to 89°, and the active layer exhibits a transmission of light within visible wavelength range of 3% or greater.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: A method for forming a semiconductor film suitable for a practical photoelectric conversion device having favorable photoelectric conversion efficiency and adapted to volume production and increased substrate area, and a method for manufacturing a photoelectric conversion device including the semiconductor film are provided. The method for forming a semiconductor film manufactures the semiconductor film including amorphous structure by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD method controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.

Abstract: The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.

Abstract: A method for joining a film onto a substrate comprises: a step (A) of floating the film on an interface between an aqueous liquid and a water-insoluble liquid; a step (B) of immersing the substrate into the aqueous liquid; a step (C) of stacking the substrate onto said one surface of the film in the aqueous liquid; a step (D) of immersing the stacked substrate and film into the water-insoluble liquid with maintaining the substrate being stacked on the film to adhere the film to the substrate; and a step (E) of drawing up the stacked substrate and film from the water-insoluble liquid with maintaining the substrate being stacked on the film to join the film onto the substrate.

Abstract: The present invention relates to a semiconductor compound having the general formula AxB1-xCy, to a method of optimizing positions of a conduction band and a valence band of a semiconductor material using said semiconductor compound, and to a photoactive device comprising said semiconductor compound.

Abstract: A photosensor includes a substrate, a gate line, and a data line disposed on the substrate. A thin film transistor is connected to the gate line and the data line. A first photo-sensing member is disposed on the substrate, and a first electrode is connected to the thin film transistor and the first photo-sensing member. A second photo-sensing member is disposed on the first photo-sensing member, and a second electrode is connected to the first electrode and the second photo-sensing member.

Abstract: A stacked-layered thin film solar cell and a manufacturing method thereof are provided. The stacked-layered thin film solar cell includes a front electrode layer, a stacked-layered light-absorbing structure, and a back electrode layer. The stacked-layered light-absorbing structure has a p-i-n-type layered structure and consists essentially of I-III-VI compounds, wherein the group III elements at least include indium (In) and aluminum (Al). The p-type layer of the stacked-layered light-absorbing structure is near the front electrode layer while the n-type layer is near the back electrode layer. The Al/In concentration ratio in the p-type layer is higher than that in the n-type layer.

Abstract: A system and method for enhancing the conversion efficiency of thin film photovoltaics. The thin film structure includes a photovoltaic absorbent layer covered by a confinement layer. A laser beam passes through the confinement layer and hits the photovoltaic absorbent layer. The laser can be pulsed to create localized rapid heating and cooling of the photovoltaic absorbent layer. The confinement layer confines the laser induced plasma plume creating a localized high-pressure condition for the photovoltaic absorbent layer. The laser beam can be scanned across specific regions of the thin film structure. The laser beam can be pulsed as a series of short pulses. The photovoltaic absorbent layer can be made of various materials including copper indium diselenide, gallium arsenide, and cadmium telluride. The photovoltaic absorbent layer can be sandwiched between a substrate and the confinement layer, and a molybdenum layer can be between the substrate and the photovoltaic absorbent layer.

Abstract: A solar cell device is formed of an insulating layer provided metal substrate and a photoelectric conversion circuit, which includes a photoelectric conversion layer, an upper electrode, and a lower electrode, formed on the substrate. The substrate is constituted by a metal substrate and a porous Al anodized film. The metal substrate is formed of a base material of a metal having a higher rigidity, a high heat resistance, and a smaller linear thermal expansion coefficient than Al and an Al material integrated by pressure bonding to at least one surface thereof, and the porous Al anodized film is formed on a surface of the Al material.

Abstract: Two junction solar energy conversion devices, i.e. photovoltaic cells have a bottom silicon N+/P/P+ photovoltaic cell and an upper GaP N+/P/P+ photovoltaic cell containing quantum well layers which extend the wavelength range over which the GaP cell absorbs light. The quantum well layers are composed of materials other than Gallium Phosphide (GaP) and may be either pseudomorphic or metamorphic. Light trapping may be incorporated at the top surface of the GaP photovoltaic cell along with anti-reflective coatings, and light trapping may be incorporated on the bottom surface of the silicon cell. The bottom surface of the silicon photovoltaic cell is coated with a passivating dielectric layer and electrical contact to the silicon is made with conductive vias extending through the passivating layer.

Abstract: Techniques are disclosed for improving the quantum efficiency of photocathode devices. The techniques allow for an increase in the optical thickness of the photocathode device, while simultaneously allowing for an increase in the probability of electron escape into the vacuum of the device. The techniques are particularly useful in detector and imaging. In one embodiment, a photocathode device is provided that has an array of corner cubes fabricated in a surface of the photocathode. The corner cube array is made of the same material as the photocathode layer. The device may be, for example, a detector or image intensifier that operates in the UV, visible, and IR light spectrums, and may further include a gain medium, anode, and readout device. Techniques for forming the device are also provided.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

Abstract: Provided is a thin film solar cell module including series-connected unit cells, wherein a thin film silicon photoelectric conversion unit and a compound semiconductor-containing photoelectric conversion unit are electrically connected in each unit cell. Each unit cell includes at least a transparent electrode, an amorphous silicon-containing photoelectric conversion unit, an intermediate transparent electrode layer, a photoelectric conversion unit, a compound semiconductor-based photoelectric conversion unit, and a metal electrode in this order from the light incident side. In each of the unit cells, the photoelectric conversion unit and the compound semiconductor-based photoelectric conversion unit are connected in series to form a series-connected component. The series-connected component is connected to a first photoelectric conversion unit in parallel via the transparent electrode and the intermediate transparent electrode layer.

Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film compound solar cell before it is separated from the substrate. To separate the thin film compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film compound solar cell.

Abstract: A method for selectively depositing a thin film structure on a substrate. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The process gas is decomposed onto the substrate to form a selectively deposited thin film structure. A thin film device and apparatus for forming a selectively deposited thin film structure are also disclosed.

Abstract: The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

Abstract: A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

Abstract: A method of fabricating a transparent electrode for use in a quantum dot sensitized solar cell, and a quantum dot sensitized solar cell fabricated according to the method are provided.

Abstract: An InGaAsN solar cell includes an InGaAsN structure having a bandgap between 1.0 eV to 1.05 eV, and a depletion region width of at least 1.0 ?m.

Abstract: To manufacture a thin film compound solar cell which can improve the adhesive property of electrodes even when being provided with a base material, and which prevents the base material from being separated. A cell main body configured by laminating a plurality of compound semiconductor layers is formed on a substrate. A rear surface electrode 7 is formed on the cell main body, and a rear surface film 8 as the base material is formed on the rear surface electrode 7. A reinforcing material 9 is attached on the rear surface film 8. The substrate is separated from the cell main body, and the cell main body is mesa-etched. A surface electrode 13 is formed on a contact layer 3 after the etching. The reinforcing material 9 is separated, and the surface electrode 13 is annealed. The formed thin film compound solar cell is separated into a plurality of solar cell elements.

Abstract: There is provided a process for forming a layer of electroactive material. The process includes: depositing a liquid composition containing an electroactive material and at least one solvent onto a workpiece to form a wet layer; placing the wet layer on the workpiece into a vacuum chamber containing solid absorptive material; and treating the wet layer at a controlled temperature in the range of ?25° C. to 80° C. and under an applied vacuum in the range of 10?6 Torr to 1,000 Torr for a period of 1-100 minutes.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.

Abstract: A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.

Abstract: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the fir

Abstract: The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1<An and CTE1?CTE3 and CTE5>CTE1 or A1>An and CTE1?CTE3 and CTE5<CTE1.

Abstract: A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Abstract: A radiation converter includes a directly converting semiconductor layer, wherein the semiconductor layer includes grains whose interfaces at least predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. in at least one embodiment, the charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta.