Abstract: A pad of an embedding tool is received on a faceplate. The pad is supported on a support member. When the embedding tool is urged against the surface of the faceplate, the pad is allowed to change the attitude relative to the support member in response to undulation generated on the surface of the faceplate. The movement of the flat surface follows the undulation of the faceplate. When a relative movement is induced between the embedding tool and the surface of the faceplate, the surface of the faceplate thus reliably receives the uniform or constant contact of the flat surface. When grains are supplied between the flat surface of the pad and the surface of the faceplate, the grains are uniformly pushed into the surface of the faceplate. In this manner, the grains are uniformly and constantly embedded into the surface of the faceplate.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A two part retaining ring is described that has a lower ring and an upper ring. The lower ring contacts a polishing surface during chemical mechanical polishing. The upper surface and the lower surface of the lower ring have matching grooves formed therein to increase the flexibility of the lower ring.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased.

Abstract: A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include a pad window lying within the first opening. The pad window can include a second polishing surface and a gas-permeable material. In one aspect, an apparatus can include an attaching surface of a platen lying adjacent to the attaching surface of the polishing pad. In another aspect, a process for polishing can include changing a temperature of a gas within a spaced-apart region formed between a pad and a platen. The process can also include forming a gas flux across the polishing pad after polishing has started.

Abstract: The present invention provides a polishing apparatus for a semiconductor wafer in which a slide member and a swing holding member are provided in a polishing member that is provided so as to block an opening in a head housing, a slide guide member and a ring member are provided in the head housing, the ring member surrounds the periphery of the polishing member positioned in the head housing such that a predetermined clearance is formed between the ring member and the outer peripheral portion of the polishing member, and the polishing member is constituted to be capable of a reciprocating motion using air that is supplied into and discharged from the head housing. By means of this constitution, the present invention provides a polishing apparatus in which the linearity between a polishing thrust and air pressure in the head housing is increased.

Abstract: A method and apparatus for polishing a thin film on a semiconductor substrate is described. A polishing pad is rotated and a wafer to be polished is placed on the rotating polishing pad. The polishing pad has grooves that channels slurry between the wafer and polishing pad and rids excess material from the wafer, allowing an efficient polishing of the surface of the wafer. The polishing pad smoothes out due to the polishing of the wafer and must be conditioned to restore effectiveness. A conditioning assembly with a plurality of diamonds is provided. The diamonds have predetermined angles that provide strength to the diamond. This allows for an optimal rotation speed and downward force in effective conditioning of the polishing pad, while reducing diamond fracture rate.

Abstract: A magnetic polishing method capable of easily and satisfactorily polishing the inner peripheral end face of a circular hole (1) at the center part of a disk substrate (2) even if the diameter of the circular hole is reduced. By this method, a large quantity of disk substrates with stable quality can be supplied, thermal asperity trouble and head crush can be prevented from occurring on a magnetic disk, and the density of the information recording surface of the magnetic disk can be increased.

Abstract: Temperature regulation systems and methods for controlling the temperature of polishing pads used in planarizing micro-device workpieces are disclosed herein. In one embodiment, an apparatus for polishing a workpiece includes a platen defining a planarizing zone and a primary duct system. The platen can have a first duct, and the primary duct system can have a second duct operatively coupled to the first duct of the platen. The second duct is configured to direct a gas flow laterally relative to the planarizing zone. The apparatus also includes a pad support carried by the primary duct system, and a polishing pad carried by the pad support. The pad support can have a plurality of apertures that are in fluid communication with the gas flow in the second duct.

Abstract: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.

Abstract: A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.

Abstract: A polishing pad used for polishing the surface of a semiconductor wafer in CMP equipment, includes a support layer adhered to the top of a rotary plate of the CMP equipment, a polishing layer disposed on top of the support layer, and an adhesive layer interposed between the support layer and the polishing layer and adhesively fixing the polishing layer to the support layer. In one embodiment, the polishing support layer is a plate-shaped molded article formed of a mixture including magnetic powder and a bonding agent containing synthetic resin. In another embodiment, a protective film extends along outer peripheral side walls of the adhesive layer and the support layer.

Abstract: A substrate delivery mechanism comprises a top ring, a substrate loader for loading a substrate, and a pusher mechanism, wherein the substrate loader comprises a top ring guide and the pusher mechanism comprises a top ring guide lifting table, in which the top ring guide and the top ring guide lifting table together form a sealed space below the substrate held by the top ring in a condition where the substrate loader is moved up by the pusher mechanism, wherein the substrate is detached from the top ring by exhausting the sealed space while at the same time injecting a fluid from through-holes provided in a substrate holding surface of the top ring.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A method for processing a rotationally symmetric workpiece, preferably having optically effective surfaces, whose symmetry axis is aligned parallel with the z-axis and which is moveable parallel with the z-axis, using a rotating, rotationally symmetric grinding or polishing tool whose rotation axis is aligned parallel with the y-axis and which is thereby touching the surface of the workpiece by means of a processing surface, the workpiece rotating around its symmetry axis and to a tool for performing said method as well as a method for tactile measuring of such a workpiece. The invention may be used for processing aspheric workpieces having optically effective surfaces, in particular lenses or mirrors that have a non-processable zone, for example a conical bump in the middle of the workpiece.

Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: A platen structure of a polishing apparatus for semiconductor wafer and a method for exchanging a polishing pad affixed to the same are provided in which the polishing pad supported by the platen is exchanged with convenience within a short time. The platen structure of the polishing apparatus in which the polishing pad attached to the platen of the polishing apparatus comprises a pad plate to which the polishing pad for polishing a wafer is attached, and a platen body combined with the pad plate and having at least one vacuum hole formed thereto to provide a vacuum passage.

Abstract: In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to estimate the status of one or more consumables in a CMP system.

Abstract: Apparatus for chemical mechanical polishing are disclosed. A disclosed apparatus includes a polishing station having a polishing pad, a gas supplier to generate pressurized gas to press a wafer toward the polishing pad, and a polishing head assembly including a planar member having a plurality of fine holes in communication with the gas supplier and a membrane to press the wafer toward the polishing pad due to the pressurized gas received through the plurality of fine holes, wherein the plurality of fine holes are arranged to rotate at different radii of rotation when the planar member rotates.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base (23), a turntable (27), a polishing pad (29) and a drive mechanism (45) for driven rotation of a polishing head (63). The polishing head is adapted to hold at least one wafer (35) for engaging a front surface of the wafer with a work surface of the polishing pad. A spherical bearing assembly (75) mounts the polishing head (63) on the drive mechanism for pivoting of the polishing head about a gimbal point (p) lying no higher than the work surface when the polishing head holds the wafer in engagement with the polishing pad. This pivoting allowing the plane of the front surface of the wafer to continuously align itself to equalize polishing pressure over the front surface of the wafer, while rotation of the polishing head is driven by the driving mechanism.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface adapted to couple a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion. The generally circular center portion encloses an area and has an attachment surface area that is less than the area enclosed by the generally circular center portion. The attachment surface area is adapted to couple an inner portion of the polishing pad to the platen. According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface coupling a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion.

Abstract: An apparatus and method of using a in situ finishing information for finishing semiconductor wafers is described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of semiconductor wafers. Planarization and localized finishing can used with in situ finishing information such as differential lubricating boundary layer for finishing. Defects can generally be reduced using the in situ friction finishing information method.

Abstract: A polishing pad (104) having an annular polishing track (122) and including a plurality of grooves (148) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS1–CS3) and at least two discontinuities in slope (D1, D2) located within the polishing track.

Abstract: A polishing pad (200) that includes a polishing layer (204) having a polishing region (208) for polishing a wafer (220). The polishing layer includes a set of inflow grooves (232) that extend into the polishing region and a set of outflow grooves (236) that extend out of the polishing region. The inflow and outflow grooves cooperate with one another to enhance the utilization of a polishing slurry during polishing of the wafer.

Abstract: An improved design for a retaining ring for a chemical mechanical poling machine is described which provides superior flexibility and instantaneous in-situ control of the polishing rate in the edge region of a wafer. The design has a plurality of straight slurry delivery groves, angled in the direction of rotation of said ring wherein each alternate channel is recessed away from the inner circumference of the bottom, pad contacting, surface, of said retaining ring by a recess which extends upward from the bottom surface only sufficiently to prevent contact of the retaining ring with the polishing pad in the area of the recess. Each recess curves outwardly towards the inner circumference of the retaining ring in a manner to form a symmetrical segmented tab with a rounded edge, tangent to the inner circumference of the retaining ring, and meeting the inner circumference at the exit end of an adjacent non-recessed slurry channel. For a 200 mm.

Abstract: Disclosed is a chemical mechanical polishing apparatus for polishing a surface of a wafer using a mechanical friction as well as a chemical polishing agent. The chemical mechanical polishing apparatus includes a polishing head for absorbing a wafer and a polishing means for polishing the wafer. The polishing apparatus may include a platen composed of at least three segments formed in conformity with polishing zones, a polishing pad provided on each of the segments, and a support for supporting the segments such that the segments are separately adjustable in the height depending on the polishing zones and are rotatable.

Abstract: Disclosed is a carrier head of a chemical mechanical polishing apparatus for planarizing a semiconductor wafer. An adjustment chamber is provided in a space section formed between a membrane lower holder and a membrane upper holder of a wafer support assembly. Pressure applied to the adjustment chamber is transferred to a rear surface of a membrane during a polishing process through a perforated hole formed at a center of the membrane lower holder. A center portion of the membrane is connected to a vacuum pipe by passing through a hole of the membrane lower holder and the adjustment chamber. Vacuum pressure is directly applied to a wafer so that the wafer is easily attached to the carrier head at lower pressure. Pressure is evenly distributed over the whole area of the wafer so that the wafer is evenly polished.

Abstract: A polishing apparatus is provided for removing material from a surface of a substrate. The apparatus includes a polishing head for positioning a surface of a substrate against a polishing surface of the apparatus. The polishing head includes a subcarrier adapted to hold the substrate during a polishing operation, and a retaining ring having an inner edge disposed about the subcarrier and a lower surface in contact with the polishing surface during the polishing operation, the lower surface of the retaining ring having a number of radial recesses formed therein to distribute a chemical between the substrate held on the subcarrier and the polishing surface when there is relative motion between the substrate and the polishing surface, thereby inhibiting non-planar polishing of the surface of the substrate.

Abstract: A grinding assembly for shaping work pieces that includes one or more grind spindles. Each of the grind spindles include two independent grinding wheels driven by a single spindle drive. The grind spindles translate horizontally to perform both edge and face grinding with a single grind spindle. A non-contact position sensor in a work spindle measures work spindle displacement during grinding and provides feedback to the grind spindle to regulate the force imparted on the work piece by the grind spindle. In variations, an abrasive wheel disposed radially with respect to an axis of spindle rotation is utilized to perform edge grinding of the work piece. In other variations cleaning, polishing and grinding are carried out in a single grinding assembly. In yet other variations, a wheel dressing apparatus is utilized to dress the wheel when one or more forces to maintain productivity of the grind wheel exceed a threhold.

Abstract: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

Abstract: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

Abstract: Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, a method for polishing a workpiece includes determining an estimated frequency of serial defects in a workpiece, pressing the workpiece against a polishing pad and moving the workpiece relative to the pad. The method further includes vibrating the workpiece and/or the pad at a frequency that is greater than the estimated frequency of the serial defects. In one aspect of this embodiment, determining the estimated frequency of serial defects can include: determining a relative velocity between the workpiece and the polishing pad; estimating the length of a mark on the workpiece; estimating the time a particle in a planarizing solution is in contact with the workpiece; and estimating the number of cracks in the workpiece.

Abstract: A platen for chemical mechanical polishing of a substrate includes a surface upon which a polishing pad can be placed, a support structure, and a controller. The surface has a first region and a second region and is operable to exert force against the polishing pad during polishing. The support structure is located beneath the second region and is operable to cause the second region to exert more force than the first region. The controller is operable to adjust the amount of force that is exerted by the second region.

Abstract: A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 ?m.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus includes a vertically movable top ring body for holding the substrate, and an elastic membrane for defining a pressure chamber in the top ring body. A coating is applied to a surface of the elastic membrane which is brought into contact with the substrate.

Abstract: A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased.

Abstract: Systems and apparatus providing a carrier head for chemical mechanical polishing are described. The carrier head includes a base, a support structure attached to the base, a retaining structure attached to the base, and a connector attached to the base and the retaining structure. The support structure includes a receiving surface for contacting a substrate. The retaining structure prevents the substrate from moving along the receiving surface. The base and the retaining structure can thermally expand at different rates of expansion without causing distortion to one another.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: An apparatus for polishing chemically and mechanically a wafer includes a membrane supporter and a membrane. The membrane has a pressure portion that is divided into a plurality of regions, and a partition portion extending from the border between the plurality regions. The partition portion of the membrane is fixed to a slider that can move up and down in a guide groove formed in the membrane supporter.

Abstract: A substrate polishing apparatus polishes a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed and a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate. The substrate polishing apparatus also has a fluid supply passage for supplying a fluid for measurement, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the fluid for measurement to the fluid chamber.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: A chemical mechanical polishing apparatus includes a platen, a polishing pad affixed to a surface of the platen, and a polishing head configured to retain and rotate a wafer while pressing a surface of the rotating wafer against the polishing pad. A first portion of the polishing pad that engages the polishing head proximate the edge of the wafer provides less rigidity than a second portion of the polishing pad that engages a portion of the surface of the wafer. For example, the polishing pad and/or the platen may have a recess or other cushioning structure positioned proximate a locus of movement of a portion of the polishing head that supports the edge of the wafer.

Abstract: In one embodiment, the disclosure is directed to a chemical mechanical polishing retaining ring. The chemical mechanical polishing retaining ring includes a support formed of a first material comprising a first polymer and a wear portion formed of a second material comprising a second polymer. The first material has an elastic modulus greater than the elastic modulus of the second material.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface thereon, a top ring for pressing a workpiece to be polished against the polishing surface, and a dresser for dressing the polishing surface on the polishing table. The dresser comprises a dressing element provided on a surface of the dresser for dressing the polishing surface by sliding contact with the polishing surface, and an ejection nozzle provided on the surface of the dresser for ejecting a fluid supplied from a fluid source toward the polishing surface.

Abstract: Method and apparatus for chemically and mechanically planarizing the surface of a silicon wafer which includes a compressible non-cellualar lapping surface and a slurry disposed between the wafer and the lapping surface.

Abstract: Provided is a polishing method of polishing a substrate by rotating the substrate and a pad while keeping the pad in contact with the substrate, the method including: a first polishing step of polishing the substrate by rotating the substrate and the pad in a first direction; and a second polishing step of polishing the substrate by rotating the substrate and the pad in a second direction opposite to the first direction.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing surface, and a top ring for holding a workpiece and pressing the workpiece against the polishing surface under a first pressing. The polishing apparatus has a pressurized fluid source for supplying pressurized fluid, and a plurality of openings provided in the holding surface of the top ring for ejecting the pressurized fluid supplied from the pressurized fluid source. A plurality of areas each having the openings are defined on the holding surface so that the pressurized fluid is selectively ejectable from the openings in the respective areas.