Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: A substrate holding apparatus can accurately control temperature of a substrate in a direct manner with a relatively simple arrangement. The substrate holding apparatus has a top ring configured to hold a substrate to be polished and press the substrate against a polishing surface, and an air bag attached to the top ring so as to be brought into contact with a rear face of the substrate. The substrate holding apparatus also has a regulator operable to regulate a temperature control fluid to be supplied into the air bag, and a flow regulating valve operable to regulate a flow rate of the temperature control fluid discharged from the air bag.

Abstract: A platen structure of a polishing apparatus for semiconductor wafer and a method for exchanging a polishing pad affixed to the same are provided in which the polishing pad supported by the platen is exchanged with convenience within a short time. The platen structure of the polishing apparatus in which the polishing pad attached to the platen of the polishing apparatus comprises a pad plate to which the polishing pad for polishing a wafer is attached, and a platen body combined with the pad plate and having at least one vacuum hole formed thereto to provide a vacuum passage.

Abstract: Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods are disclosed. A method in accordance with one embodiment of the invention includes disposing a polishing liquid on a polishing surface of a microfeature workpiece polishing pad. The polishing pad can include a matrix material and a plurality of abrasive elements fixedly distributed in the matrix material. The polishing liquid can include a plurality of particles that are at least approximately chemically inert with respect to the abrasive elements. In a particular embodiment, the particles can have a polymeric, non-ceramic composition. The method can further include moving at least one of the polishing pad and the plurality of particles relative to the other to remove deposits from the polishing pad. This operation can be performed serially or simultaneously with using the polishing pad to remove material from a microfeature workpiece.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. The eddy current monitoring system or the optical monitoring system can be used to determine the substrate edge. A focusing optic can be used to improve the accuracy of the optical monitoring system in detecting the edge of the substrate.

Abstract: Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. A polishing liquid is disposed between the polishing surface and the workpiece and at least one of the workpiece and the polishing surface is moved relative to the other. Material is removed from the microfeature workpiece and at least a portion of the polishing liquid is passed through at least one recess in the polishing surface so that a gap in the polishing liquid is located between the microfeature workpiece and the surface of the recess facing toward the microfeature workpiece.

Abstract: The object of the present invention is to provide a double side polisher capable of maintaining thickness control accuracy over a long period of time without being affected by a gradual change in thickness of a polishing pad, and a thickness control method. The first polishing operation is finished based on the polishing duration time, and the second and subsequent polishing operations are finished based on the measured distance values of a distance sensor, and after each polishing operation including the first polishing, the measured value of the distance sensor is calibrated based on the measured value and target value of finishing thickness of the work piece. Since the calibration is performed for each polishing operation, it is possible to maintain thickness control accuracy over a long period of time.

Abstract: Carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, the carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a fluid with magnetic elements in the chamber. The magnetic field source has a first member that induces a magnetic field in the head. The fluid and/or the magnetic elements move within the chamber under the influence of the magnetic field source to exert a force against a portion of the micro-device workpiece. In a further aspect of this embodiment, the carrier assembly includes a flexible member in the chamber. The magnetic field source can be any device that induces a magnetic field, such as a permanent magnet, an electromagnet, or an electrically conductive coil.

Abstract: The object of the invention is to provide a method of manufacturing a semiconductor device and a processing apparatus for planarization wherein to form copper wiring in multiple layers. The removal of a residue of polishing by local electro polishing, the enhancement of the performance of planarization by using a grindstone and the reduction by small frictional force in electro polishing of damage, are enabled. To achieve the object, the following measures are taken. A residue of polishing of copper is removed by combining the detection of a local area including the residue of polishing of copper and local processing for electro polishing. As small-load processing for planarization is enabled by using electro polishing, multilayer interconnection structure using low-k material as a dielectric interlayer is also enabled.

Abstract: A polishing apparatus includes a plurality of polishing fluid supply openings terminating in a polishing surface of a polishing table, and a plurality of grooves which are formed in the polishing surface and arranged so as not to be in direct communication with the polishing fluid supply openings. The polishing apparatus further includes a polishing fluid supply system for supplying a polishing fluid to a surface of a substrate through the openings. The grooves may extend at right angles relative to one another so as to define a plurality of lands therebetween, and the polishing fluid supply openings are formed through the lands.

Abstract: The object of the present invention is to provide a thickness control method for a double side polisher, accuracy of which is not affected by wearing of polishing pad and applicable to polishing of nonconductive work pieces. An eddy current sensor in a cavity of an upper polishing plate measures distance from the senor to the upper surface of carrier with holes for the work pieces being inserted respectively. The measured distance is successively monitored and polishing is stopped when the distance has become a predetermined value corresponding to target amount of material removal from the work piece.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base (23), a turntable (27), a polishing pad (29) and a drive mechanism (45) for driven rotation of a polishing head (63). The polishing head is adapted to hold at least one wafer (35) for engaging a front surface of the wafer with a work surface of the polishing pad. A spherical bearing assembly (75) mounts the polishing head (63) on the drive mechanism for pivoting of the polishing head about a gimbal point (p) lying no higher than the work surface when the polishing head holds the wafer in engagement with the polishing pad. This pivoting allowing the plane of the front surface of the wafer to continuously align itself to equalize polishing pressure over the front surface of the wafer, while rotation of the polishing head is driven by the driving mechanism.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface adapted to couple a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion. The generally circular center portion encloses an area and has an attachment surface area that is less than the area enclosed by the generally circular center portion. The attachment surface area is adapted to couple an inner portion of the polishing pad to the platen. According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface coupling a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion.

Abstract: Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.

Abstract: A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

Abstract: It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

Abstract: The invention relates to a method for machining a workpiece surface, wherein an area to be machined of the workpiece surface is machined under the influence of a polishing operation and wherein, during the machining, the displacement of the area to be machined relative to a reference area rigidly coupled to the workpiece surface is monitored by means of interferometry. The invention further relates to a machining apparatus, comprising a polishing tool and a measuring tool, while the measuring tool comprises an interferometer. Preferably, the polishing tool comprises a fluid jet polishing device.

Abstract: Methods are provided for controlling adjustable pressure zones of a CMP carrier. A method comprises determining a first thickness of a layer on a wafer underlying a first zone of the carrier. A first portion of the layer underlying the first zone is removed. The first zone is configured to exert a first pressure against the second surface of the wafer. A second thickness of the layer underlying the first zone is determined and a target thickness corresponding to a predetermined thickness profile is selected. A second pressure for the first zone is calculated using the first thickness, the second thickness, the first pressure, and the target thickness. The pressure exerted by the first zone against the second surface of the wafer is adjusted to the second pressure and the steps are repeated for a second zone.

Abstract: An upper polishing plate is moved downward until facing a lower polishing plate to polish a work piece. The upper polishing plate is rotated in a horizontal plane together with a first elastic member, a second elastic member, an outer member and a connecting member. A pressure difference between a first pressing force pressing the outer member or an inner member upward and a second pressing force pressing the outer member or the inner member downward, which is produced in a first closed space by supplying a compressed fluid into and discharging the same from the first closed space, is adjusted, so that a third pressing force of the upper polishing plate, which presses a work piece, can be adjusted.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03–0.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus includes a vertically movable top ring body for holding the substrate, and an elastic membrane for defining a pressure chamber in the top ring body. A coating is applied to a surface of the elastic membrane which is brought into contact with the substrate.

Abstract: The present invention relates to a polishing method for polishing a workpiece by pressing the workpiece, to be polished, against a fixed abrasive and bringing the workpiece into sliding contact with the fixed abrasive. The polishing method includes a first step of polishing the workpiece while supplying a polishing liquid which contains an anionic surface-active agent and does not contain abrasive particles, and a second step of polishing the workpiece while supplying a polishing liquid which contains a cationic surface-active agent and does not contain abrasive particles.

Abstract: An apparatus and method for re-surfacing compact discs. One method is a two-step method in which the disc to be re-surfaced is first placed on a shaft. A resilient pad supports an abrasive medium and is positioned so the abrasive medium overlaps only the protective layer of the CD. The disc and abrasive material are rotated in opposite directions at about the same speed to remove deeper blemishes in a wet operation. Subsequent polishing is accomplished in a similar manner using a polishing compound instead of an abrasive. The re-surfacing and polishing apparatus each have motor driven shafts which are parallel and spaced apart and support the CD and pad in a cabinet. A transparent cover extends across the top of the cabinet. In another embodiment, the resurfacing and polishing is accomplished in a one-step operation in which polishing fluid is applied to a non-abrasive medium is utilized and the fluid is continuously recycled.

Abstract: The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: Systems and apparatus providing a carrier head for chemical mechanical polishing are described. The carrier head includes a base, a support structure attached to the base, a retaining structure attached to the base, and a connector attached to the base and the retaining structure. The support structure includes a receiving surface for contacting a substrate. The retaining structure prevents the substrate from moving along the receiving surface. The base and the retaining structure can thermally expand at different rates of expansion without causing distortion to one another.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: A substrate processing apparatus equipped to employ electrical potential to assist in planarization and/or conditioning is provided.

Abstract: A process for producing a finely cellular polyurethane foam by mixing a first ingredient comprising an isocyanate compound and a second ingredient comprising a compound containing an active hydrogen group, characterized by comprising adding a nonionic silicone surfactant containing no hydroxyl group to at least one of the first ingredient and the second ingredient in an amount of 0.1 to 5 wt %, excluding 5 wt %, based on the total amount of the first ingredient and the second ingredient, subsequently agitating the surfactant containing ingredient together with an unreactive gas, which has no reactivity to isocyanate group or active hydrogen group, to disperse the unreactive gas as fine bubbles to prepare a bubble dispersion and then mixing the bubble dispersion with the remaining ingredient to cure the resultant mixture and forming finely cellular structure into the resultant polyurethane foam by the fine bubbles of the bubble dispersion.

Abstract: A chemical mechanical polishing apparatus and method can use an in-situ monitoring system. A measurement of a position of a carrier head and a sinusoidal first function can be used to define a second function that associates measurements from the series with positions on the substrate. For each measurement in a series from the in-situ monitoring system, the second function can be used to determine a position on the substrate where the measurement was taken. In addition, a measurement of the position of the carrier head, a time when the measurement of the substrate property is made, and a phase correction representing lag resulting from a processing delay in generating the measurement of the position of the carrier head can be used in determining a position on the substrate where a measurement of a substrate property was taken.

Abstract: A chemical mechanical polishing apparatus includes a platen, a polishing pad affixed to a surface of the platen, and a polishing head configured to retain and rotate a wafer while pressing a surface of the rotating wafer against the polishing pad. A first portion of the polishing pad that engages the polishing head proximate the edge of the wafer provides less rigidity than a second portion of the polishing pad that engages a portion of the surface of the wafer. For example, the polishing pad and/or the platen may have a recess or other cushioning structure positioned proximate a locus of movement of a portion of the polishing head that supports the edge of the wafer.

Abstract: Systems and methods for activating end effectors used to condition microfeature workpiece polishing pads are disclosed. A system in accordance with one embodiment of the invention includes a rotatable end effector having a conditioning surface configured to condition a microfeature workpiece polishing medium, and a driver coupled to the end effector to rotate the end effector. The driver does not include a flexible, continuous belt coupled to the end effector. For example, the driver can include a motor-driven worm meshed with a worm gear. The system can further include a forcing element coupled to the end effector to apply a force to the end effector that is at least approximately normal to a conditioning surface of the end effector. The forcing element can include a first generally rigid member and a second generally rigid member coupled to the end effector and movable relative to the first generally rigid member to apply the force.

Abstract: Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.

Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

Abstract: A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa and a modulus E? at 40° C. and 1 rad/sec of 100 to 400 MPa.

Abstract: A polished glass disk is prepared for a magnetically recordable coating by texturing the surfaces with a highly abrasive material being abrasively engaged with the surfaces as the disk is rotated, thereby creating a relatively coarse texture with the abrasions concentric with the axis of rotation of the disk. Thereafter, the roughness of the texturing is reduced by abrading the surface of the disk with a polishing pad and an etchant slurry of colloidal silica. The etchant component has the property of attacking or softening the glass disk during the fine polishing with the colloidal silica slurry. As both the texturing step and the fine polishing step deposit a plurality of concentric abrasions on a glass disk, these abrasions aid in retaining the magnetically recordable coating deposited thereon to complete a magnetically recordable disk for use as a data storage member.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: A fixture for an automated connectorization system for processing fiber optic connectors. The fixture can include a first and second portions configured to hold the connectors. The first portion can include a plurality of clamps, each clamp being configured to clamp onto one of the connectors. The second portion can include a plurality of nests, each nest including an aperture configured to allow a ferrule of one of the connectors to extend therethrough. The second portion of the fixture is coupled to the first portion.

Abstract: Polishing apparatus and related methods employ aligned first and second magnetic field sources to adjust the compressive force and/or pressure applied by a carrier head against a target workpiece (such as a wafer) by selectively and controllably generating a repellant or attractive force between the two magnetic field sources.

Abstract: A long-lasting retaining ring for wafer carriers used in chemical mechanical planarization. A groove is disposed around the retaining ring, with the groove opening facing the mounting plate. A ridge is disposed in the groove. A bladder is disposed in the groove and is pressed between the ridge and the mounting plate. Pressure in the bladder can be maintained or adjusted to deform the bladder and thereby force the retaining ring onto the polishing pad as the retaining ring is worn. Prior to adding pressure to the bladder, the ridge forces the bladder to very closely conform to the dimensions of the groove. Thus, during use, bladder deformation is not wasted on conforming the bladder to the groove shape, but instead can be used to force the retaining ring further in the direction of the pad. The ridge thereby increases the distance the retaining ring can move towards the pad.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer. The polishing apparatus has a processing section including a polishing section (1) for polishing a semiconductor wafer (6) and a cleaning section (10) for cleaning a polished semiconductor wafer, a receiving section (40) for supplying a semiconductor wafer (6) to be polished to the processing section and receiving a polished semiconductor wafer (6), and a cleaning chamber (20) disposed between the processing section and the receiving section and defined by partitions (102, 103) with shutters (22, 24) which separate the processing section and the receiving section from each other.

Abstract: A slurry recycling apparatus having a first filter, a dirty side storage tank, slurry pump, second filter, clean side storage tank and slurry outlet, in which used slurry from an edge notch polishing apparatus is delivered to the first screen filter, transported to the dirty side slurry storage tank, pumped from the dirty side slurry storage tank through a second filter that filters out small particulate matter from the slurry and allows the slurry to pass to the clean side slurry storage tank, and finally to the edge notch polishing apparatus as needed. Slurry which is not immediately taken from the clean side slurry storage tank is continuously recycled through the second filter by overflowing from the clean side to the dirty side slurry storage tank where it is there pumped through the second filter back into the clean side slurry storage tank.

Abstract: Methods, articles of manufacture, and apparatus are provided for depositing a layer, planarizing a layer, or combinations thereof, a material layer on a substrate. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of passages formed through the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a processing system. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.

Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations.

Abstract: A wafer polisher, wherein a retainer ring (28) is installed in a wafer holding head (14), a protective sheet material (52) is disposed inside the retainer ring (28), and a wafer (W) is pressed against a polishing pad (20) through the protective sheet material (52) for polishing, whereby the protective sheet material (52) can be disposed without causing wrinkles on the inner peripheral part of the retainer ring (28).

Abstract: A method and apparatus for mechanical and/or chemical-mechanical planarization of microelectronic substrates. In one embodiment, an apparatus for controlling the planarizing characteristics of a microelectronic substrate has a carrier that may be positioned with respect to a polishing medium of a planarizing machine to move with respect to a microelectronic substrate during planarization. The apparatus may also have a modulator with a contact element, and the modulator may be attached to the carrier to position at least a portion of a contact element in front of a leading edge of the substrate by a selected distance during planarization. In operation, the modulator causes the contact element to selectively engage a region of the planarizing surface to modulate the contour of the planarizing surface during planarization.

Abstract: A pad refurbisher that provides in situ, real-time conditioning and/or cleaning of a polishing surface on a polishing pad used in chemical-mechanical polishing of a semiconductor wafer and other microelectronic substrates. The pad refurbisher has a body adapted for attachment to a wafer carrier of a chemical-mechanical polishing machine, and a refurbishing element connected to the body. The body has a distal face positioned proximate to a perimeter portion of the wafer carrier and facing generally toward the polishing surface of the polishing pad. The body travels with the wafer carrier as the wafer carrier moves over the polishing pad. The refurbishing element is connected to the distal face of the body so that the refurbishing element can operatively engage the polishing surface substantially adjacent to the perimeter of the wafer carrier.

Abstract: A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface regions of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projection region is determined on the basis of an area in which the projecting region acts on the workpiece.