Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: Retaining rings, planarizing apparatuses including retaining rings, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, a carrier head for retaining a micro-device workpiece during mechanical or chemical-mechanical polishing includes a workpiece holder configured to receive the workpiece and a retaining ring carried by the workpiece holder. The retaining ring includes an inner surface, an outer surface, a first surface between the inner surface and the outer surface, and a plurality of grooves in the first surface extending from the inner surface to the outer surface. The grooves include at least a first groove and a second groove positioned adjacent and at least substantially transverse to the first groove.

Abstract: A long-lasting retaining ring for wafer carriers used in chemical mechanical planarization. A groove is disposed around the retaining ring, with the groove opening facing the mounting plate. A ridge is disposed in the groove. A bladder is disposed in the groove and is pressed between the ridge and the mounting plate. Pressure in the bladder can be maintained or adjusted to deform the bladder and thereby force the retaining ring onto the polishing pad as the retaining ring is worn. Prior to adding pressure to the bladder, the ridge forces the bladder to very closely conform to the dimensions of the groove. Thus, during use, bladder deformation is not wasted on conforming the bladder to the groove shape, but instead can be used to force the retaining ring further in the direction of the pad. The ridge thereby increases the distance the retaining ring can move towards the pad.

Abstract: A chemical mechanical polishing pad and a system and a method for using such a pad are described. The polishing pad includes pockets of continuous porosity, each of the pockets being separated from the other pockets by a non-porous matrix. The non-porous matrix may include a network of trenches, or may have pores which have been filled with a material. The material may include a polymer resin. A system for polishing a wafer includes the polishing pad mounted on a platen. A drive assembly creates relative rotation between the wafer and the polishing pad through a drive shaft. The drive shaft may be connected to the platen or it may be connected to a wafer holder which holds the wafer. Alternatively, one drive shaft may be connected to the platen and another drive shaft may be connected to the wafer holder, and a pair of drive assemblies drive the drive shafts.

Abstract: The present invention is directed toward carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces. In one embodiment, a carrier assembly for holding a microelectronic workpiece comprises a head, a backing assembly in the head, and a barrier. The head includes a chamber, a pneumatic line in fluid communication with the chamber through which a pneumatic fluid passes, and a retaining member defining a perimeter portion of a workpiece cavity. The backing assembly is positioned in the head, and the backing assembly can include a plate in the chamber and a diaphragm on one side of the plate. The diaphragm defines a backside portion of the workpiece cavity. The barrier is positioned in the chamber and/or the pneumatic line. The barrier is configured to inhibit contaminants from back-flowing into at least a portion of the pneumatic line.

Abstract: A carrier head that has a base assembly and a flexible membrane. The flexible membrane has a generally circular main portion with a lower surface that provides a substrate-mounting surface and a plurality of concentric annular portions extending from the main portion and secured to the base assembly. The volume between the base assembly and the flexible membrane forming a plurality of pressurizable chambers.

Abstract: A carrier head for a chemical mechanical polishing apparatus. The carrier head includes a housing, a base, a loading mechanism, a gimbal mechanism, and a substrate backing assembly. The substrate backing assembly includes a support structure positioned below the base, a substantially horizontal, annular flexure connecting the support structure to the base, and a flexible membrane connected to the support structure. The flexible membrane has a mounting surface for a substrate, and extends beneath the base to define a chamber.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

Abstract: A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to the lower surface of the flexible membrane when the first chamber is evacuated, the valve is actuated to generate a signal to the substrate detection system.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate and a retaining ring. The friction coefficient of the lower surface of the flexible membrane is increased to prevent contact between the substrate and the retaining ring, thereby preventing slurry compaction and buildup and substrate deformation caused by such contact.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: An actuator assembly (432) for positioning a pad (48) includes a first actuator assembly (440), a second actuator subassembly (442) and a control system (524). In one embodiment, the first actuator subassembly (440) includes a first core (502), and a conductor (504) secured to the first core (502), and the second actuator subassembly (442) includes a second core (506) spaced apart a component gap (444) from the first core (502). Further, the control system (524) directs current to the conductor (504) to attract the second core (506) to the first core (502). In one embodiment, the amount of current directed to the conductor (504) is calculated without measuring the component gap (444).

Abstract: The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad for being brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for being brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A diaphragm flexure for a polishing head on a chemical mechanical polisher, particularly a Titan (TM) polishing head. The diaphragm flexure includes an annular flexure body having at least one bulge or protrusion formed in the upper surface thereof and at least one bulge or protrusion formed in the lower surface thereof. In assembly of the polishing head, each of the at least one inner and outer bulge or protrusion is inserted in a corresponding groove provided in a surface of an adjacent element of the polishing head. The elements in the polishing head are secured together with the flexure body typically by extending screws through respective screw openings in the elements and the flexure body.

Abstract: A carrier head has a backing assembly with a substrate support surface, a housing connectable to a drive shaft to rotate with the drive shaft about a rotation axis, and a dampening material in a load path between the backing assembly and the housing. The dampening material reduces transmission of vibrations from the backing assembly to the housing.

Abstract: The present invention provides a polishing pad for electrochemical mechanical polishing of conductive substrate. The pad comprises a plurality of grooves formed in a polishing surface of the polishing pad, the grooves being adapted to facilitate the flow of polishing fluid over the polishing pad. The conductive layers are respectively formed in the grooves and are in electrical communication with each other.

Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.

Abstract: CMP methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface of a wafer carrier so that a wafer axis of rotation is gimballed for universal movement relative to a spindle axis of rotation of a wafer spindle. An operation using a retainer ring limits wafer movement on the carrier surface perpendicular to the wafer axis. Another operation limits a direction of permitted movement between the wafer carrier and the retainer ring to only movement parallel to the wafer axis, so that a wafer plane and a retainer ing may be co-planar.

Abstract: A device for polishing digital storage discs including a polishing plate rotatably driven about a vertical axis, the upper side of which has a polishing cloth, wherein the polishing cloth is interrupted by a ring-shaped recess concentric with the axis of the polishing plate, at least one circular load-applying plate from the planar lower side of which a projection centrally protrudes to appropriately engage the central hole of the storage disk, a roller holder which has at least one idling roller and one driven roller against which the circumference of said load-applying plate gets into engagement when said plate is carried along while lying on said polishing plate, a drive for said driven roller, and mechanism for feeding a polishing medium to said polishing cloth.

Abstract: The wafer polishing apparatus enables the control of proper polishing pressure, so that the quality of wafers can be maintained high. A wafer holding head is composed of a carrier for pressing the wafer against a polishing pad, a retainer ring at the circumference of the carrier, and a holding head body. The holding head body includes a carrier pressing device having an air bag of which pressing surface area is 50% or smaller of the area of the wafer, and the pressing force from the carrier pressing device is transmitted to the carrier.

Abstract: An apparatus for polishing a wafer includes a polishing station having a platen on which a polishing pad is installed, a polishing head having a membrane that contacts a surface of the wafer, the membrane securing the wafer and pressuring the wafer against the polishing pad, wherein the polishing station includes a transfer stage for loading the wafer on or unloading the wafer from the polishing head, and wherein the transfer stage includes a pedestal on which the wafer is placed and a fluid supply part for supplying a fluid into a boundary region between the wafer and the membrane to reduce a surface tension between the wafer and the membrane. Preferably, the apparatus further includes a stopper for preventing the wafer placed on the pedestal from being lifted up along with the membrane when the wafer is unloaded from the polishing head onto the pedestal.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: A retaining ring has an inner core of a first material and an outer layer of a second, different material that is deposited on the first material. The outer layer can be deposited by spraying, e.g., by powder coating, and can be a polymer, e.g., polyetheretherketone.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. In embodiments, a polishing pad includes a backing layer having an opening, a polishing layer having an opening aligned with the opening in the backing layer, a solid window of a first material in the opening of the polishing layer, a layer of a first adhesive material between the backing layer and the solid window, and a layer of a second adhesive material between the layer of the first adhesive material and the window.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window comprising a polymer resin having a first index of refraction and an inorganic material having a second index of refraction. The transparent window has a light transmittance of about 10% or more at a wavelength of about 200 nm to about 10,000 nm. The difference between the first index of refraction and the second index of refraction is about 0.3 or less at the wavelength.

Abstract: An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain.

Abstract: A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements are disposed between the wafer carrier pressure plate and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-a-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates, etc.

Abstract: A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring being of integral design made of a plastic material, wherein the retaining ring forms on a first front side thereof a bearing surface for supporting the retaining ring on a polishing surface of the polishing apparatus, and includes on the side thereof lying opposite the first front side thereof in axial direction fitting elements for fitting the retaining ring on the polishing apparatus.

Abstract: Generally, a system and method for processing a substrate is provided. In one embodiment, a system for processing a substrate comprising a polisher, a first motion device, a second motion device and a load cup. The polisher has one or more polishing heads and one or more platens. The polishing heads are adapted to retain the substrate against the platens during processing and provide motion therebetween. The first motion device is disposed proximate the polisher's first side and moves along the first side between at least a first position and a second position. The second motion device is coupled to the first motion device and the load cup. The second motion device moves the load cup between at least a first position that is adjacent the first side and a second position that is inward of the first side.

Abstract: A process for machining a wafer-like workpiece between two plates, in which material is abraded from the workpiece under the influence of an auxiliary substance supplied and of a pressure acting on the workpiece. In this process, the pressure on the workpiece is significantly reduced and then increased again at least once during the machining of the workpiece, and the supply of the auxiliary substance is reduced as the pressure is increased.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier.

Abstract: An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: A system for conditioning a pad is provided. The system includes a pad conditioning media, a feed-roll containing a supply of the pad conditioning media, and a take-up roll for receiving an end of the pad conditioning media. Further included in the system is a pressure application member defined between the feed-roll and the take-up roll. The pressure application member is designed to apply pressure onto the pad conditioning media as the pad conditioning media is applied against the pad to cause a conditioning of a surface of the pad.

Abstract: A diaphragm flexure for a polishing head on a chemical mechanical polisher, particularly a Titan (™) polishing head. The diaphragm flexure includes an annular flexure body having at least one bulge or protrusion formed in the upper surface thereof and at least one bulge or protrusion formed in the lower surface thereof. In assembly of the polishing head, each of the at least one inner and outer bulge or protrusion is inserted in a corresponding groove provided in a surface of an adjacent element of the polishing head. The elements in the polishing head are secured together with the flexure body typically by extending screws through respective screw openings in the elements and the flexure body.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: In a machine for planarizing wafers, when a spindle carrier descends over the load station, it needs a way of determining whether it should descend to a first position suitable for depositing a wafer onto the load station or whether it should descend to a lower second position suitable for acquiring a wafer that is already present on the load station. The present invention provides a way of making this determination. The load station includes three upwardly-directed nozzles for use in supporting a wafer on three separate spaced cushions of purified water. The nozzles are supplied through branch conduits from a supply main. When no wafer is present, the pressurized water meets with little resistance as it is discharged from the nozzles. Accordingly, the pressure in the branches is relatively low. In contrast, when a wafer is present the wafer partially impedes the discharge of the water from the nozzles, causing the pressure in the branches to be greater than when no wafer is present.

Abstract: An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. In another exemplary embodiment, an apparatus for planarizing a workpiece includes at least a first and a second polishing surfaces. The first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus also has a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. In another exemplary embodiment, an apparatus for planarizing a workpiece includes a plurality of polishing stations.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method for preparing a semiconductor die for analysis comprises providing a semiconductor die having a connector on one side and an opposite, backside surface to be analyzed, providing a polishing pad for polishing the backside surface of a semiconductor die, providing a rotatable spindle for securing the polishing pad, and providing a constant force actuator on the spindle, the constant force actuator being adapted to provide constant force between the polishing pad and the backside surface of the die. The method then includes contacting the backside die surface with the polishing pad, rotating the spindle and polishing pad, and polishing the backside surface of the die while maintaining the substantially constant force of the polishing pad on the die backside surface with the constant force actuator.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A CMP system, a wafer carrier, and components of a wafer carrier are provided for processing a semiconductor topography. In particular, a CMP system, a wafer carrier, and components of a wafer carrier are provided in which a greater pressure may be applied in a first portion of a semiconductor topography than in a second portion of the topography. The first portion may, for example, be adjacent to an outer edge of the topography, while the second portion may include the center of the topography. Alternatively, the first portion and second portion of the semiconductor topography may include any region of the topography. The wafer carrier components may include a carrier plate and/or a carrier backing film adapted to apply a greater pressure in a first portion of the semiconductor topography than in a second portion of the semiconductor topography.

Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

Abstract: There is provided an apparatus for polishing a substrate, including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a first ring-shaped region concentric thereto where no through-holes are formed. For instance, the first ring-shaped region has a width greater than 10%, but smaller than 95% of a radius of the polishing pad. The apparatus enhances uniformity in polishing a substrate.