Abstract: Disclosed herein is a process for diminishing contamination of an integrated circuit wafer caused by residual slurry components disposed on a back side of a carrier for engaging an integrated circuit wafer. Also disclosed is a CMP machine configured to wash a back side of a carrier.

Abstract: A polishing apparatus (10) for polishing a device (12) with a polishing pad (48) includes a pad holder (50) and an actuator assembly (432). The pad holder (50) retains the polishing pad (48). The actuator assembly (432) includes a plurality of spaced apart actuators (438F) (438S) (438T) that are coupled to the pad holder (50). The actuators (438F) (438S) (438T) cooperate to direct forces on the pad holder (50) to alter the pressure of the polishing pad (48) on the device (12). At least one of the actuators (438F) (438S) (438T) includes a first actuator subassembly (440) and a second actuator subassembly (442) that interacts with the first actuator subassembly (440) to direct a force on the pad holder (50). The second actuator subassembly (442) is coupled to the pad holder (50) and the second actuator subassembly (442) rotates with the pad holder (50) relative to the first actuator subassembly (440).

Abstract: Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Abstract: A grinder designed to provide an automatic grinding operation for the manufacture of a semiconductor device wafer. The grinder includes a base, a rotatable index table mounted to the base, and a grinding wheel assembly including a grinding wheel for grinding a flat surface on the wafer. The index table includes a wafer holder for receiving and holding the wafer. A dressing station, including a dressing element, is positioned adjacent to the index table for dressing the grinding wheel. The dressing station is rotatable between a first position and a second position where the grinding wheel is dressed by the dressing element.

Abstract: A device for high-precision machining of the surface of an object, such as for polishing and lapping semiconductor substrates, in which the object is held on an accommodation surface for its machining. The accommodation surface can be deformed by means of a actuators connected to the surface in a positive-lock and/or non-positive-lock manner. The actuators are provided between a base plate and an accommodation plate that are mechanically biased relative to one another. The accommodation plate is configured, on its inside, with concentric grooves forming rigid rings in the axial direction. The individual rings are connected by solid substance joints. Piezo-stacks configured as actuator-sensor elements, as well as springs, are disposed between the faces of the rings and the base plates and are offset relative to one another by 120°.

Abstract: In one embodiment, a dielectric layer (144, 156) overlying a semiconductor substrate (28) is uniformly polished. During polishing, the perimeter (32) of the semiconductor substrate (28) overlies a peripheral region (16, 48, 66, 86, 120) of a polishing pad (6, 42, 60, 80, 100) and an edge portion (36) of the front surface of semiconductor substrate (28) is not in contact with the front surface (18, 50, 68, 88, 122) of the polishing pad (6, 42, 60, 80, 100), in the peripheral region (16, 48, 66, 86, 120). As a result, the polishing rate at the edge portion (36) of the semiconductor substrate (28) is reduced, and the semiconductor substrate (28) is polished with improved center to edge uniformity. Since the semiconductor substrate (28) is polished with improved center to edge uniformity, die yield is increased because die located within the edge portion (36) of the semiconductor substrate (28) are not over polished.

Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. The eddy current monitoring system or the optical monitoring system can be used to determine the substrate edge. A focusing optic can be used to improve the accuracy of the optical monitoring system in detecting the edge of the substrate.

Abstract: The object of the invention is to provide a method of manufacturing a semiconductor device and a processing apparatus for planarization wherein to form copper wiring in multiple layers. The removal of a residue of polishing by local electro polishing, the enhancement of the performance of planarization by using a grindstone and the reduction by small frictional force in electro polishing of damage, are enabled. To achieve the object, the following measures are taken. A residue of polishing of copper is removed by combining the detection of a local area including the residue of polishing of copper and local processing for electro polishing. As small-load processing for planarization is enabled by using electro polishing, multilayer interconnection structure using low-k material as a dielectric interlayer is also enabled.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base (23), a turntable (27), a polishing pad (29) and a drive mechanism (45) for driven rotation of a polishing head (63). The polishing head is adapted to hold at least one wafer (35) for engaging a front surface of the wafer with a work surface of the polishing pad. A spherical bearing assembly (75) mounts the polishing head (63) on the drive mechanism for pivoting of the polishing head about a gimbal point (p) lying no higher than the work surface when the polishing head holds the wafer in engagement with the polishing pad. This pivoting allowing the plane of the front surface of the wafer to continuously align itself to equalize polishing pressure over the front surface of the wafer, while rotation of the polishing head is driven by the driving mechanism.

Abstract: A retaining ring having a bottom portion that is removable from the ring's upper portion is described. The upper and lower portions of the retaining ring include one or more magnetic bodies and/or one or more bodies formed of a material that is attracted to magnets.

Abstract: A wafer carrier for controlling downward force and edge effect during chemical mechanical planarization. A retaining ring actuator is disposed within the retaining ring to control the height of the retaining ring relative to the bottom surface of the wafer carrier. An inflatable membrane is disposed across the bottom surface of the wafer carrier such that pressure in the bladder is independently regulated to control the downward force acting on the wafer during CMP. In addition, an edge control bladder may also be disposed within the carrier such that if the pressure in the bladder is also regulated, the amount of force on the edge of the wafer changes. By regulating retaining ring actuator pressure, inflatable membrane pressure, and edge control bladder pressure, non-uniformities in the wafer surface and edge effect may be addressed during CMP.

Abstract: The invention relates to a method for machining a workpiece surface, wherein an area to be machined of the workpiece surface is machined under the influence of a polishing operation and wherein, during the machining, the displacement of the area to be machined relative to a reference area rigidly coupled to the workpiece surface is monitored by means of interferometry. The invention further relates to a machining apparatus, comprising a polishing tool and a measuring tool, while the measuring tool comprises an interferometer. Preferably, the polishing tool comprises a fluid jet polishing device.

Abstract: A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

Abstract: Disclosed is a carrier head of a chemical mechanical polishing apparatus for planarizing a semiconductor wafer. An adjustment chamber is provided in a space section formed between a membrane lower holder and a membrane upper holder of a wafer support assembly. Pressure applied to the adjustment chamber is transferred to a rear surface of a membrane during a polishing process through a perforated hole formed at a center of the membrane lower holder. A center portion of the membrane is connected to a vacuum pipe by passing through a hole of the membrane lower holder and the adjustment chamber. Vacuum pressure is directly applied to a wafer so that the wafer is easily attached to the carrier head at lower pressure. Pressure is evenly distributed over the whole area of the wafer so that the wafer is evenly polished.

Abstract: It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

Abstract: There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.

Abstract: The present invention relates to a polishing method for polishing a workpiece by pressing the workpiece, to be polished, against a fixed abrasive and bringing the workpiece into sliding contact with the fixed abrasive. The polishing method includes a first step of polishing the workpiece while supplying a polishing liquid which contains an anionic surface-active agent and does not contain abrasive particles, and a second step of polishing the workpiece while supplying a polishing liquid which contains a cationic surface-active agent and does not contain abrasive particles.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus includes a vertically movable top ring body for holding the substrate, and an elastic membrane for defining a pressure chamber in the top ring body. A coating is applied to a surface of the elastic membrane which is brought into contact with the substrate.

Abstract: A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body so as to control pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

Abstract: The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: An apparatus for polishing chemically and mechanically a wafer includes a membrane supporter and a membrane. The membrane has a pressure portion that is divided into a plurality of regions, and a partition portion extending from the border between the plurality regions. The partition portion of the membrane is fixed to a slider that can move up and down in a guide groove formed in the membrane supporter.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Abstract: A carrier head includes a housing connectable to a drive shaft to rotate therewith, a lower assembly having a substrate mounting surface, and a gimbal mechanism that connects the housing to the lower assembly to permit the lower assembly to pivot with respect to the housing about an axis substantially parallel to the polishing surface. The gimbal mechanism includes a shaft having an upper end slidably disposed in a vertical passage in a vertical passage in the housing, and a lower member that connects a lower end of the shaft to the lower assembly. The lower member bends to permit the base to pivot with respect to the housing. The shaft and the lower member are a unitary body.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical polishing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract: A chemical mechanical polishing apparatus and method can use an in-situ monitoring system. A measurement of a position of a carrier head and a sinusoidal first function can be used to define a second function that associates measurements from the series with positions on the substrate. For each measurement in a series from the in-situ monitoring system, the second function can be used to determine a position on the substrate where the measurement was taken. In addition, a measurement of the position of the carrier head, a time when the measurement of the substrate property is made, and a phase correction representing lag resulting from a processing delay in generating the measurement of the position of the carrier head can be used in determining a position on the substrate where a measurement of a substrate property was taken.

Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.

Abstract: A chemical mechanical polishing apparatus includes a platen, a polishing pad affixed to a surface of the platen, and a polishing head configured to retain and rotate a wafer while pressing a surface of the rotating wafer against the polishing pad. A first portion of the polishing pad that engages the polishing head proximate the edge of the wafer provides less rigidity than a second portion of the polishing pad that engages a portion of the surface of the wafer. For example, the polishing pad and/or the platen may have a recess or other cushioning structure positioned proximate a locus of movement of a portion of the polishing head that supports the edge of the wafer.

Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad for being brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for being brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: An apparatus is disclosed which improves the optical monitoring of semi-conductor wafers undergoing chemical mechanical planarization (CMP). The apparatus consists of two assemblies. The first is a fiber optical wave-guide assembly installed within the polishing pad during the pad's construction. This assembly forms an integrated optical waveguide originating from the center of rotation of the polishing pad and terminating at a location within the wafer track. The second is a vacuum-attached hub containing optical and electronic devices, which couples light into the waveguide integrated into the polishing pad, provides light coupling to the center of rotation of the polishing pad, provides means for converting the received light into a signal that is transmitted to the CMP tool control system, and also has provision to prevent polishing slurry from coming in contact with the optical and electronic components.

Abstract: Carrier assemblies, polishing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical polishing of micro-device workpieces are disclosed herein. In one embodiment, a carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a magnetic fluid in the chamber. The magnetic field source is configured to generate a magnetic field in the head. The magnetic fluid changes viscosity within the chamber under the influence of the magnetic field to exert a force against at least a portion of the micro-device workpiece. The magnetic fluid can be a magnetorheological fluid. The magnetic field source can include an electrically conductive coil and/or a magnet, such as an electromagnet. The carrier assembly can also include a fluid cell with a cavity to receive the magnetic fluid.

Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

Abstract: A polishing carrier head including a retaining ring for defining an area of a polishing pocket region used to polish a predetermined object, is provided. The polishing carrier head may further include a perforated plate positioned lateral to the retaining ring, the perforated plate having a plurality of perforations for permitting fluid flow. The polishing carrier head may further include a flexible membrane having a first region overlying a portion of the retaining ring and the perforated plate and a second region in which a first portion of the flexible membrane overlies a second portion of the flexible membrane to form one or more bellows. The polishing carrier head may further include an edge support ring in contact with the first region of the flexible membrane for clamping the first region of the flexible membrane to the perforated plate.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: An autocollimator is relied upon to orient an electronic die such that its frontside is parallel to a polishing surface. The polishing device is configured such that a beam of light that is projected by the autocollimator is able to reflect off of the backside surface of the die. Measurement off of the backside surface allows the die's parallelism relative to the polishing surface to be established without removing the die from the polishing surface and allows the die's orientation to be monitored and adjusted while the frontside is being deprocessed.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer. The polishing apparatus has a processing section including a polishing section (1) for polishing a semiconductor wafer (6) and a cleaning section (10) for cleaning a polished semiconductor wafer, a receiving section (40) for supplying a semiconductor wafer (6) to be polished to the processing section and receiving a polished semiconductor wafer (6), and a cleaning chamber (20) disposed between the processing section and the receiving section and defined by partitions (102, 103) with shutters (22, 24) which separate the processing section and the receiving section from each other.

Abstract: A differential pressure application apparatus is configured to apply different amounts of pressure to different locations of a substrate, such as a semiconductor device structure. The apparatus may be used during polishing or planarization processes. The apparatus includes pressurization structures that may be moved independently from one another. An actuator may control the amount of force or pressure applied by each pressurization structure to the surface of the substrate. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: A polish apparatus for planarizing wafers and films over wafers comprising the following. A substrate chuck for holding a substrate with a surface to be polished thereof being directed about vertically. A first drive means for rotating the substrate chuck. A polishing head having a polishing surface which is adjacent to the substrate during the polishing of the substrate. The polishing surface of the polishing head is smaller than the surface of the substrate. A polishing solution supply means for supplying a polishing solution through the polishing head to the substrate held by the substrate chuck. A reciprocating means for reciprocally moving the polishing head on the surface to be polished. A pressing means for pressing the polishing pad against a substrate held by the substrate chuck by way of the polishing head. The polish head is preferably comprised of one piece of molded polymer. No polish pad is used.

Abstract: The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof.

Abstract: A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface regions of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projection region is determined on the basis of an area in which the projecting region acts on the workpiece.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing surface, and a top ring for holding a workpiece and pressing the workpiece against the polishing surface under a first pressing. The polishing apparatus has a pressurized fluid source for supplying pressurized fluid, and a plurality of openings provided in the holding surface of the top ring for ejecting the pressurized fluid supplied from the pressurized fluid source. A plurality of areas each having the openings are defined on the holding surface so that the pressurized fluid is selectively ejectable from the openings in the respective areas.