Abstract: Polishing apparatus and related methods employ aligned first and second magnetic field sources to adjust the compressive force and/or pressure applied by a carrier head against a target workpiece (such as a wafer) by selectively and controllably generating a repellant or attractive force between the two magnetic field sources.

Abstract: A chemical mechanical polishing apparatus and a chemical mechanical polishing method thereof are provided. The chemical mechanical polishing method at least includes the following steps. In step a, a positive pressure is formed between a polishing pad and a wafer. In step b, the wafer is driven to revolve around a first central axis. In step c, a polishing slurry is injected between the polishing pad and the wafer. In step d, the positive pressure formed on the wafer by the polishing pad is adjusted for change the contacting modes of the polishing pad and the wafer as well as the wafer removal rate.

Abstract: A polishing head used for CMP is described, including a retaining ring that is for engaging with a wafer, a membrane and an edge control ring. The membrane includes a bottom part for engaging with the wafer, and a lip part contiguous with the bottom part. The edge control ring is disposed between the retaining ring and the membrane, including a bottom part that has an abutting surface. The abutting surface of the edge control ring contacts with the external surface of the lip part of the membrane when the membrane is not inflated.

Abstract: Retaining rings with curved surfaces are described. The curved surfaces prevent damage to a fixed abrasive polishing pad when the retaining ring is used in a polishing process. The curved surfaces are on the bottom surface of the ring, such as along the outer diameter and/or along the sidewalls of channels formed in the bottom of the ring.

Abstract: A polishing apparatus comprises a first polishing table having a first polishing surface, a substrate carrier for holding a substrate and positioning the substrate so as to bring a surface of the substrate into contact with the first polishing surface, a pressing mechanism for pressing, against the first polishing surface, the surface of the substrate which has been brought into contact with the first polishing surface by the substrate carrier, a retainer ring mounted on the substrate carrier so as to surround the substrate which has been pressed against the first polishing surface by the pressing mechanism, and a retainer-ring-position-adjustment mechanism for adjustably positioning the retainer ring relative to the substrate, which has been pressed against the first polishing surface, in directions toward and away from the first polishing surface.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements are disposed between the wafer carrier pressure plate and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-à-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates, etc.

Abstract: A chemical-mechanical polishing machine and associated methods are disclosed. One embodiment of the machine includes a polishing pad, a wafer carrier corresponding to the polishing pad and configured to carry a semiconductor wafer, and a transfer station proximate to the polishing pad for holding the wafer during loading and/or unloading. At least one of the wafer carrier and the transfer station is configured to dissipate electrostatic charge from the wafer.

Abstract: A CMP head includes a membrane support and a membrane. The membrane support is disk-shaped, having an origin and a radius R. The membrane support has at least a ventilator disposed in a central region within the range between origin and (2/3) R, and at least a diversion opening disposed in a peripheral region within the range between (2/3) R and R. The membrane includes a disk-shaped part disposed on the first surface of the membrane support, and an annular part surrounding the annular sidewall of the membrane support.

Abstract: Provided is a polishing apparatus and polishing pad, intended for polishing a substrate, and designed for improved flow and distribution of a polishing composition to the area of interaction between the pad and substrate. In one aspect, a polishing pad is provided having first and second pluralities of unidirectional pores configured to communicate polishing composition between the top and bottom surfaces of the pad. A cyclic flow of composition is established to continuously renew composition to the area of interaction between the pad and the substrate. In another aspect, a polishing apparatus is provided having a polishing composition transfer region between a polishing pad and a platen. Pores disposed through the pad communicate composition from the transfer region to the top surface. To facilitate directing the composition into the pores, the apparatus includes a plurality of protrusions protruding into the transfer region that are aligned with the pores.

Abstract: The present invention provides a polishing head 1 comprising a carrier 3, a guide ring 4, a dress ring 5, and a head body 2, wherein the head body 2 is rotatable, and holds the carrier 3, the guide ring 4, and the dress ring 5; the head body 2 has a reversed-bowl shape and has a hollow 8; the dress ring, and at least the guide ring or the carrier are held by being coupled to a lower brim of the head body via a diaphragm 6; the hollow of the head body is sealed. During polishing, the pressure of the sealed hollow is adjusted with a pressure regulating mechanism 9 communicating with the hollow, thereby elastically deforming the diaphragm. As a result, a wafer W can be polished while the wafer and the dress ring are pressed with a given pressing force against a polishing pad 11 on a turn table 12 with rotating the wafer held by the carrier and the dress ring.

Abstract: This polishing apparatus includes a head that holds a semiconductor wafer, a polishing pad that polishes a surface to be polished of the semiconductor wafer held by the head, and a dresser that reconditions the polishing pad by cutting the polishing pad. The polishing apparatus polishes a surface to be polished of the semiconductor wafer while causing the head and the polishing pad to rotate and reconditions the polishing pad by use of the dresser before and after polishing the surface to be polished. The polishing apparatus of the present invention supports at least two said dressers so that the dressers can rotate on their own axes and further includes a dresser oscillator that causes the dressers to oscillate simultaneously on the polishing pad.

Abstract: The invention relates to a method for determining the number of active diamonds on a conditioning disk. In particular, the method comprises (a) contacting a diamond conditioner disk with a hard surface, wherein the diamond-containing side of the diamond conditioning disk is facing the hard surface, (b) moving the diamond conditioner disk under a load across the hard surface so as to cause any active diamonds present on the diamond-containing side of the diamond conditioner disk to leave a mark corresponding to each active diamond, and (c) counting the marks to determine the number of active diamonds on the diamond conditioner disk.

Abstract: An edge control system for deployment on a CMP carrier head comprising a bladder and a carrier head housing having a passage extending therethrough. The bladder includes a flexible diaphragm and is coupled to the carrier head housing. The edge control system comprises first and second annular ribs, each of which comprises a first end portion sealingly coupled to the carrier head housing, a second end portion coupled to the diaphragm, and a strain relief member substantially intermediate the first end portion and the second end portion. A plenum is substantially defined by the first and second annular ribs and the carrier head housing. The passage is fluidly coupled to the plenum to permit the pressurization of the plenum, and the strain relief member promotes the extension of the first and second annular ribs away from the carrier head housing when the plenum is pressurized.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

Abstract: The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

Abstract: A carrier head that has a housing, a base assembly, a retaining ring, a carrier ring, and a flexible membrane is described. The base assembly is vertically movable relative to the housing. The retaining ring is connected to and vertically movable relative to the base assembly and has a lower surface configured to contact a polishing pad and an inner surface configured to circumferentially surround the edge of a substrate to retain the substrate. The carrier ring is connected to and vertically fixed relative to the base assembly, circumferentially surrounds the retaining ring to prevent lateral motion of the retaining ring, and has a bottom surface configured to contact a polishing pad.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more pivotable load-and-unload cups to transfer the objects to and/or from one or more object carriers to polish the objects. Each pivotable load-and-unload cup may be configured to transfer the objects to and/or from a single object carrier. Alternatively, each pivotable load-and-unload cup may be configured to transfer the objects to and/or from two object carriers. The pivotable load-and-unload cups may be configured to be pivoted about one or more pivoting points over at least one polishing surface, such as a polishing pad surface.

Abstract: A polishing pad for use in chemically mechanically polishing a semiconductor substrate enhances the uniformity of the rate at which material is removed from the surface of the semiconductor substrate, thereby ensuring the reproducibility of the chemical mechanical polishing process. The polishing pad has main grooves that divide an upper portion of the pad into a plurality of cells. At least one of the cells includes a land portion and a grooved portion substantially enclosed by the land portion. A respective slurry hole extends through the pad to the grooved portion such that slurry supplied through the slurry hole feeds into the grooved portion but is impeded by the land portion from flowing outwardly of the cell.

Abstract: An apparatus, system and method for grinding or polishing an optic is provided. The apparatus includes a shell adapted to a bending profile, torque actuators attached at an outer edge of the shell and coupled to each other, a tensioning system attached at the outer edge of the shell, and a control system for computing the bending profile and controlling the torque actuators and tensioning system. The torque actuators and tensioning system apply bending moments to the edge of the shell to adapt the shell according to the bending profile provided by the control system. A calibration system further corrects errors in a measured bending profile.

Abstract: Systems and methods for polishing microfeature workpieces. In one embodiment, a method includes determining a status of a characteristic of a microfeature workpiece and moving a carrier head and/or a polishing pad relative to the other to rub the microfeature workpiece against the polishing pad after determining the status of the characteristic of the microfeature workpiece. The carrier head also carries a plurality of piezoelectric members. The method further includes applying pressure against a back side of the microfeature workpiece in response to the determined status of the characteristic by energizing at least one of the plurality of piezoelectric members. In another embodiment, a system includes a workpiece carrier assembly, a plurality of piezoelectric members, a polishing pad, a metrology tool for determining a status of the characteristic, and a controller. The controller can have a computer-readable medium containing instructions to perform the above-mentioned method.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

Abstract: A carrier head for supporting a workpiece is provided. The carrier head comprises a mount plate having an aperture therethrough, and a clamp ring having a foot portion and a first leg portion extending therefrom. The first leg portion extends through the aperture, and the foot portion abuts the mount plate proximate the aperture. A flexible bladder has first and second ribs that are received between the mount plate and the foot portion. An annular fastener is removably coupled to the leg portion, and engages the mount plate to cause the first and second ribs to be sealingly secured between the mount plate and the foot portion.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: The invention provides a vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof.

Abstract: A carrier head for holding a workpiece during processing of a workpiece surface is provided. The carrier head includes a carrier housing, a base and a pressure member. The base is configured to hold the workpiece and is movable with respect to the carrier housing. The pressure member is between the base and the carrier housing and is configured to induce the base to apply a predetermined force onto the process surface.

Abstract: A resilient pneumatic annular sealing bladder is coupled for fluid communication to a first pressurized pneumatic fluid to define a first pneumatic zone and is attached to a first surface of the wafer stop plate adjacent the retaining ring interior cylindrical surface to receive the wafer and to support the wafer at a peripheral edge. The resilient pneumatic annular sealing bladder defines a second pneumatic zone radially interior to the first pneumatic zone and extends between the first surface of the wafer stop plate and the wafer when the wafer is attached to the polishing head during a polishing operation and is coupled for fluid communication to a second pressurized pneumatic fluid. The wafer attachment stop plate is operative during non polishing periods to prevent the wafer from flexing excessively from an applied vacuum force used to hold the wafer to the polishing head during wafer loading and unloading operations.

Abstract: A carrier head of a chemical mechanical polishing apparatus has a support, an elastic membrane secured to the support and spaced from the bottom surface of the support so that a pressure chamber is defined between the membrane and the bottom surface of the support; and at least one annular barrier of elastic material extending from the bottom surface of the support. Each barrier has an annular partition portion that extends through the pressure chamber and divides the pressure chamber into respective pressure zones on opposite sides thereof, and an annular contact portion that abuts the membrane such that the barrier contacts the membrane but is not fixedly attached thereto. The contact portion includes a pair of annular flanges extending laterally in opposite directions at the lower end of the partition portion.

Abstract: A differential pressure application apparatus is configured to apply different amounts of pressure to different locations of a substrate, such as a semiconductor device structure. The apparatus may be used during polishing or planarization processes. The apparatus includes physically discrete pressurization structures that may be moved independently from one another. An actuator may control the amount of force or pressure applied by each pressurization structure to the surface of the substrate. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: The present invention relates to a polishing pad useful for planarizing a substrate in a CMP process using a polishing composition. The polishing pad is transparent and allows for the use of an in-situ optical end-point detection apparatus without the need for a separate aperture or window in the polishing pad.

Abstract: Apparatus for polishing are provided. An apparatus comprises a fluid controller, a polishing apparatus and a fluid interface membrane. The fluid controller is fluidly coupled to the polishing apparatus by way of at least one conduit. The fluid interface membrane is disposed within at least one of the fluid controller, the conduit and the polishing apparatus to separate a first fluid and a second fluid and to transfer pressure from the first fluid to the second fluid.

Abstract: Carrier assemblies, polishing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical polishing of micro-device workpieces are disclosed herein. In one embodiment, a carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a magnetic fluid in the chamber. The magnetic field source is configured to generate a magnetic field in the head. The magnetic fluid changes viscosity within the chamber under the influence of the magnetic field to exert a force against at least a portion of the micro-device workpiece. The magnetic fluid can be a magnetorheological fluid. The magnetic field source can include an electrically conductive coil and/or a magnet, such as an electromagnet. The carrier assembly can also include a fluid cell with a cavity to receive the magnetic fluid.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion connecting the central portion to the base, and at least one flap extending from an inner surface of the central portion. The flap divides a volume between the flexible membrane and the base into a plurality of chambers, and the flap includes a laterally extending first section and an angled second section extending beneath the first section and connecting the laterally extending first section to the central portion.

Abstract: The polishing apparatus is capable of precisely controlling polishing pressure, correctly positioning a press plate and uniformly polishing a workpiece. In the polishing apparatus, a holding head comprises: first pressing means for introducing a pressurized fluid into a first fluid chamber and pressing a main head section downward; second pressing means for introducing a pressurized fluid into a second fluid chamber and pressing a press plate downward; and third pressing means for introducing a pressurized fluid into a third fluid chamber and pressing the workpiece downward. With this structure, the workpiece is held on the lower side of an elastic sheet member, and the lower face of the workpiece can be polished by a polishing plate.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: A wafer carrier for controlling downward force and edge effect during chemical mechanical planarization. A retaining ring actuator is disposed within the retaining ring to control the height of the retaining ring relative to the bottom surface of the wafer carrier. An inflatable membrane is disposed across the bottom surface of the wafer carrier such that pressure in the bladder is independently regulated to control the downward force acting on the wafer during CMP. In addition, an edge control bladder may also be disposed within the carrier such that if the pressure in the bladder is also regulated, the amount of force on the edge of the wafer changes. By regulating retaining ring actuator pressure, inflatable membrane pressure, and edge control bladder pressure, non-uniformities in the wafer surface and edge effect may be addressed during CMP.

Abstract: Methods and apparatus for chemical mechanical polishing are described. In one embodiment, an apparatus includes a table top and a transfer station and multiple polishing stations are mounted on the table top. The apparatus further includes multiple washing stations, where each washing station is located between either two polishing stations or between a polishing station and a transfer station. Multiple carrier heads are supported by a support member that is rotatable about an axis. The transfer station and the multiple polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract: An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. The apparatus for planarizing a workpiece may include first and second polishing surfaces where the first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus may also have a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. An apparatus for planarizing a workpiece which includes a plurality of polishing stations is also disclosed.

Abstract: The invention refers to a polishing tool for optical lenses with at least one polishing pad adaptable at least partially to the shape of a lens surface of said lenses and drivable by means of a drive shaft, said polishing pad having a membrane, wherein said polishing pad can transmit a bearing force of said membrane at least in an orthogonal direction relative to a lens surface. Moreover, the polishing tool comprises a reinforcing member connectable to said membrane, said reinforcing member being dimensionally stable in a parallel direction relative to a surface of said membrane and being flexible and/or pliable in an orthogonal direction relative to the surface of said membrane, wherein at least one pressure pad with a pressure membrane is arranged within said polishing pad, wherein said pressure membrane can be made to bear and/or can be prestressed against said membrane or said reinforcing member in an indirect or in a direct manner.

Abstract: A polishing apparatus comprises a polishing tool having a polishing surface, and a holder device (top ring) for holding a semiconductor wafer (a substrate). The polishing apparatus further comprises a color CCD camera for taking a color image of a region on the polishing surface; an image processor for determining whether or not any foreign matter exists on the polishing surface based on a condition of a color in color image data acquired by the color CCD camera; and an apparatus operation control section which in response to determination of the image processing section, stops relative movement between the semiconductor wafer and the polishing surface and separates the top ring and the polishing surface from each other.

Abstract: A system for chemical mechanical polishing having a carrier head with pressurizeable chambers that can be configured into pressure zones is described. The system includes a carrier head with a membrane for contacting a substrate during polishing. Pressurizeable chambers behind the membrane are in communication with pressure inputs. The pressure inputs can each supply a different pressure to the pressurizeable chambers. Some of the pressurizeable chambers can be in communication with more than one pressure input. Zones of pressure can be arranged, where each zone includes one or more pressurizeable chambers. The zones can be configurable by altering the pressurizeable chambers that make up each zone.

Abstract: A system for processing a conductive surface on a front surface of a wafer to form a metallic interconnect structure is disclosed. The system for processing comprises an electrochemical mechanical processing (ECMPR) module configured to form a substantially planarized conductive layer on the front surface of the wafer, a chamber within the ECMPR module configured to remove conductive material from an edge region of the wafer, a CMP module configured to receive the wafer from the ECMPR module and polish the planarized conductive layer on the surface of the wafer to form the metallic interconnect structure, and a robot configured to transfer the wafer from the ECMPR module to the chemical mechanical polish (CMP) module. In one aspect of the invention, the ECMPR module deposits conductive material on the front surface of the wafer. The ECMPR module removes at least a portion of the conductive layer from the front surface of the wafer.

Abstract: Apparatus for and methods of chemical mechanical polishing (CMP) of semiconductor wafers are disclosed. A preferred embodiment comprises an apparatus for polishing a semiconductor workpiece that includes a polishing pad, a fluid dispenser adapted to dispense a fluid to the polishing pad, and a temperature measurement device adapted to measure the temperature of the fluid. The apparatus includes a heat exchanger adapted to increase or decrease the temperature of the fluid.

Abstract: The method of sucking water is capable of easily removing excess water included in a backing member adhered on a plate of a polishing apparatus. In the method, the excess water is removed from the backing member by the steps of: pressing a water absorbing member onto a holding surface of the backing member, on which the work piece is adhered and held, so as to absorb the excess water from the backing member; and sucking the excess water absorbed by the water absorbing member.

Abstract: A flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus has a central portion with an outer surface providing a substrate receiving surface, a perimeter portion for connecting the central portion to a base of the carrier head, and at least one flap extending from an inner surface of the central portion. The flap includes a laterally extending first section and a vertically extending second section connecting the laterally extending first section to the central portion.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract: Methods and apparatus for providing metrology for chemical mechanical polishing. A chemical mechanical polishing system includes a first polishing station, a second polishing station, a transport device, and a first measuring station. The transport device is configured to hold a workpiece during polishing at the first and second polishing stations and to move the workpiece from the first polishing station to the second polishing station. The first measuring station is situated to measure a characteristic of the workpiece when the transport device is holding the workpiece and when the workpiece is not in contact with a polishing pad of any of the first polishing station and the second polishing station.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and more particularly to a polishing apparatus having a workpiece transfer robot for transferring a workpiece from one operation to the next. The polishing apparatus according to the present invention comprises a polishing section including a top ring for holding a workpiece to be polished and a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring; a cleaning section including a cleaning device for cleaning the workpiece that has been polished in the polishing section; and a workpiece transfer robot for transferring the workpiece to be polished to the polishing section or for transferring the workpiece that has been polished to the cleaning section.

Abstract: Methods and apparatuses for analyzing and controlling performance parameters in planarization of microelectronic substrates. In one embodiment, a planarizing machine for mechanical or chemical-mechanical planarization includes a table, a planarizing pad on the table, a carrier assembly, and an array of force sensors embedded in at least one of the planarizing pad, a sub-pad under the planarizing pad, or the table. The force sensor array can include shear and/or normal force sensors, and can be configured in a grid pattern, concentric pattern, radial pattern, or a combination thereof.

Abstract: A method and apparatus for polishing a thin film on a semiconductor substrate is described. A polishing pad is rotated and a wafer to be polished is placed on the rotating polishing pad. The polishing pad has grooves that channels slurry between the wafer and polishing pad and rids excess material from the wafer, allowing an efficient polishing of the surface of the wafer. The polishing pad smoothes out due to the polishing of the wafer and must be conditioned to restore effectiveness. A conditioning assembly with a plurality of diamonds is provided. The diamonds have predetermined angles that provide strength to the diamond. This allows for an optimal rotation speed and downward force in effective conditioning of the polishing pad, while reducing diamond fracture rate.