Abstract: A flatness of a substrate is determined to achieve a desired flatness of a mask blank by predicting the variation in flatness resulting from a film stress of a thin film formed on the substrate. The flatness is adjusted by measuring the flatness of the substrate as a measured flatness, selecting a load type with reference to the measured flatness, and polishing the substrate under pressure distribution specified by the load type. A principal surface of the substrate has a flatness greater than 0 ?m and not greater than 0.25 ?m. A polishing apparatus includes a rotatable surface table, a polishing pad formed thereon, abrasive supplying means for supplying an abrasive to the polishing pad, substrate holding means, and substrate pressing means for pressing the substrate. The substrate pressing means has a plurality of pressing members for individually and desirably pressing a plurality of divided regions of the substrate surface.

Abstract: A chemical mechanical polishing (CMP) pad is provided. The CMP pad includes a groove pattern disposed on a polishing surface of the pad. The groove pattern is formed of an alternating sequence of spaced apart grooves. The alternating sequence of grooves comprises a groove of a first size and a groove of a second size, wherein the first and second groove sizes are different relative to one another.

Abstract: An abrading machine braking system for use in braking a wheeled abrading machine having a rotating abrading tool used in abrading a surface. The abrading machine braking system uses two braking wheels that engage the surface of the wheels of the abrading machine and the braking wheels are fixed to the respective ends of a brake axle that is in turn coupled to a brake cylinder assembly. The brake cylinder assembly contains a plurality of steel discs that are keyed to a lengthwise slot in the brake axle so that the discs rotate with the axial. A plastic braking disc is located adjacent to one of the steel discs within the brake cylinder assembly and provides a braking force that is transmitted to the two brake wheels through the brake axle. A brake release handle is used to bring the braking wheels into contact with the wheels on the abrading machine and to remove them from contact with the abrading machine wheels.

Abstract: A sensing apparatus for detecting a processing endpoint of a multi-layer semiconductor wafer includes a light source to emit light against a surface of the semiconductor wafer, a color sensor to sense a reflection color from the surface of the semiconductor wafer in response to the incident light and to generate a sensor signal, and a decision circuit coupled to the color sensor and configured to decide whether the wafer processing endpoint has been reached based at least in part on the sensor signal. In another embodiment, a sensing apparatus is coupled to a movable structure to position the sensing apparatus to sense the surface of the semiconductor wafer.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.

Abstract: A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A method of predicting the lapping property of a charged lapping plate uses samples with a known lap surface. The samples are lapped on the plate and a non-invasive sensor is used to determine the lapping rate under a fixed load and rotation speed. The total frictional force of the samples is measured during the lapping to calculate the friction and Preston coefficients of the plate. The samples are held in place while the plate rotates and the sensor measures the distance to the plate. The plate rotates for a specific time so that adequate removal of the pad material has occurred. The lapping rate is determined from a change in the gap distance over a time interval. The lapping rate and friction are then assessed to determine if the plate is lapping worthy.

Abstract: Polishing machines and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces are disclosed herein. In one embodiment, a machine includes a table having a support surface, an under-pad carried by the support surface, and a workpiece carrier assembly over the table. The under-pad has a cavity and the carrier assembly is configured to carry a microfeature workpiece. The machine further includes a magnetic field source configured to generate a magnetic field in the cavity and a magnetorheological fluid in the cavity. The magnetorheological fluid changes viscosity within the cavity under the influence of the magnetic field source. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R §172 (b).

Abstract: Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.

Abstract: In a system and method to reduce wafer breakages in a wafer handling system, the position of a wafer on a platen is monitored and closing of the platen on a vacuum chamber is prevented if a misaligned wafer is detected. In one embodiment the wafer position is monitored by monitoring the air pressure in vacuum channels of a platen faceplate.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: A pressure control system is used for eliminating individual differences of a plurality of pressure controllers used for controlling pressures of a plurality of pressure-controlled sections. The pressure control system includes a plurality of pressure controllers for supplying a pressurized fluid to a plurality of pressure-controlled sections, a master pressure controller for supplying a pressurized fluid having a reference pressure, a plurality of calibration chambers corresponding to the pressure controllers.

Abstract: The invention improves a polishing process for a wafer retained in a multizone carrier in a chemical mechanical polishing tool. A light signal is communicated to the front surface of the wafer and the reflected light signal is captured by a metrology instrument. The metrology instrument communicates the intensity of the reflected light to a control system. The location or radial position corresponding to the reflected light signal from the front surface of the wafer may be determined by the control system. From the intensity measurements and corresponding locations, the control system is able to determine an approximate topography of the wafer. The control system may alter the pressure within one or more zones within the multizone carrier to improve the polishing process. The control system may also alter the initial pressures within the multizone carrier for future wafers based on the polishing results from the present wafer.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: A pad backer is described, comprising a backing plate, an elastomer layer and a pad backing ring. The elastomer layer has a bottom surface bonded to the backing plate and an upper surface with a protrudent part at the edge portion thereof. The pad backing ring has an inner bottom surface with a recessed part thereon matching with the protrudent part on the upper surface of the elastomer layer, such that the elastomer layer is fixed onto the pad backing ring through engagement of the protrudent part and the recessed part.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: A polishing machine in which adverse influence caused by a surface condition of a retainer ring can be reduced with a simple structure. The polishing machine includes a rotatable polishing plate; a top ring including a holding plate for holding and pressing a wafer onto a polishing cloth of the polishing plate; an independently rotating retainer ring in which the holding plate is freely inserted; and a positioning member for correctly positioning the retainer ring on the polishing cloth while the retainer ring is rotated. The retainer ring includes a pressing member which presses the polishing cloth along an outer edge of the wafer to make the level of the polishing cloth pressed by the pressing member substantially equal to that of the polishing cloth pressed by the wafer.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable of polishing a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable of rotating the substrate against the polishing pad; and a dispenser capable of dispensing a slurry onto the pad.

Abstract: A system and apparatus precisely controls the amount of flatness or curvature in a lapping plate. The lapping plate is formed from two layers of metal alloys, such as tin-antimony and steel. A bimetallic effect is exploited to induce a linear expansion in the plate so that the flatness or curvature of the plate is manipulated with thermal cycling. The plate is machined and charged under very specific and tightly controlled temperatures to produce a very robust, flat plate charge. As temperature cycling induces a linear expansion along a single plane across the plate, the resultant flatness change is scalar with temperature, and can be repeated and controlled. When the plate laps magnetic sliders, the plate can be thermally cycled to produce a conical surface and a high crown-to-camber ratio can be achieved.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a workpiece, such as semiconductor substrate, by polishing. In accordance with the invention, the workpiece is subjected to a vibratory polishing method, and optionally at least one additional polishing motion selected from rotational, oscillating, sweeping, orbital and linear polishing motions. As a result, polished workpieces, such as semiconductor wafers, have reduced surface defects, improved planarity, and are polished more uniformly over a wider area.

Abstract: A polishing stage is mounted on a body provided with a rough grinding stage and a fine grinding stage so that a wafer can be roughly ground, finely ground and polished in one planarization apparatus. The planarization apparatus also has a cleaning stage for cleaning a polishing pad of the polishing stage to thereby clean the dirty cleaning pad. The planarization apparatus is also provided with an etching unit to thereby perform a sequence of planarization from the rough grinding to the etching.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A polishing head for use in an apparatus for chemically-mechanically polishing semiconductor wafers is provided. The polishing head includes a first side having at least a portion thereof operably connectable with a spindle on the apparatus; and a second side opposite the first side, the second side having a substantially spherical cap shape comprising an outer region adapted to apply a first force onto a semiconductor wafer against a polishing pad, and an inner region adapted to apply a second force onto the semiconductor wafer against the polishing pad, the second force being different from the first force, whereby the first force and the second force cause the polishing pad to planarize the semiconductor wafer substantially uniformly. A method of polishing semiconductor wafers is also provided.

Abstract: The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof.

Abstract: A system for polishing a substrate has a controller, pressure source, a platen, and a carrier for handling the substrate. The carrier must be able to detect if a substrate is present. In either the case of a false detection of substrate presence or the failure to detect substrate presence, the likely result is damaged substrates, wasted polishing consumables, and down time of the manufacturing facility. Detection is achieved by the substrate causing movement of a plunger and by such movement resulting in a pressure differential that is detected. The reliability of this detection is improved by one or more of a precise relationship of the plunger to a plate that applies pressure to the substrate, a controlled seal that is ensured of being broken when the plunger is moved by the presence of a substrate, and proper spring pressure applied to the plunger to prevent spurious plunger movement.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: The invention provides a polishing composition comprising (i) an abrasive comprising (a) about 5 to about 45 wt. % of first abrasive particles having a Mohs' hardness of about 8 or more, (b) about 1 to about 45 wt. % of second abrasive particles having a three-dimensional structure comprising aggregates of smaller primary particles, and (c) about 10 to about 90 wt. % of third abrasive particles comprising silica, and (ii) a liquid carrier. The invention also provides a method of polishing a substrate, which method comprises the steps of (i) providing the above-described polishing composition, (ii) providing a substrate having a surface, and (iii) abrading at least a portion of the substrate surface with the polishing composition to polish the substrate.

Abstract: The present invention is directed toward carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces. In one embodiment, a carrier assembly for holding a microelectronic workpiece comprises a head, a backing assembly in the head, and a barrier. The head includes a chamber, a pneumatic line in fluid communication with the chamber through which a pneumatic fluid passes, and a retaining member defining a perimeter portion of a workpiece cavity. The backing assembly is positioned in the head, and the backing assembly can include a plate in the chamber and a diaphragm on one side of the plate. The diaphragm defines a backside portion of the workpiece cavity. The barrier is positioned in the chamber and/or the pneumatic line. The barrier is configured to inhibit contaminants from back-flowing into at least a portion of the pneumatic line.

Abstract: A gimbal assembly that can be used in conjunction with semiconductor fabrication tools, such as chemical-mechanical polishing (CMP) tools, as well as other types of tools, is disclosed. A gimbal assembly may include a gimbal hub, a pivot head plate, a gimbal sleeve, and a gimbal post. The gimbal hub has an interior cavity. The pivot head plate has a ball head, a base, and an outer edge, where the base is situated in the bottom of the interior cavity. The gimbal sleeve is situated in the bottom of the interior cavity over the outer edge of the pivot head plate, securing the pivot head plate in place within the interior cavity. The gimbal post is situated over the ball head of the pivot head plate. The ball head of the pivot head plate preferably has dual diameters.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: A polishing pad conditioner for a chemical-mechanical polishing apparatus includes a conditioning plate having a first recess and a holder having a second recess. The first recess is formed on the upper face of the conditioning plate, and the second recess is formed on the bottom face of the holder. A first filling member having a specific gravity smaller than that of the conditioning plate fills up the first recess, and a second filling member having a specific gravity smaller than that of the holder fills up the second recess. Therefore, the weight of the polishing pad conditioner can be reduced, and the durability and service life of an air bladder that adjusts the height of the polishing pad conditioner can be improved.

Abstract: A carrier head for chemical mechanical polishing of a substrate having a front surface, a back surface and an edge. The carrier head has a base, an inner retaining ring positioned beneath the base, and an outer retaining ring surrounding the inner retaining ring to retain the inner retaining ring. The inner retaining ring has a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular lower projection protruding downwardly from the main portion with a second surface to circumferentially surround the edge of the substrate to retain the substrate.

Abstract: Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.

Abstract: Systems and methods for characterizing a polishing process are provided. One method includes scanning a specimen with two or more measurement devices during polishing. In one embodiment, the two or more measurement devices may include a reflectometer and a capacitance probe. In another embodiment, the two or more measurement devices may include an optical device and an eddy current device. An additional embodiment relates to a measurement device for scanning a specimen during polishing. The device includes a light source and a scanning assembly. The scanning assembly is configured to scan light from the light source across the specimen during polishing. Another measurement device includes a laser light source coupled to a first fiber optic bundle and a detector coupled to a second fiber optic bundle. An additional method includes scanning a specimen with different measurement devices during different steps of a polishing process.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A method and system for cleaning conditioning devices used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm for holding and transporting the conditioning device between the polish pad area of the machine and the conditioning device cleaning area. The cleaning area consists of an ultrasonic tank containing a liquid for the purpose of removing particles, residues and contaminants from the conditioning device and its mounting hardware. Removal of contaminants from the conditioning device leads to reduced defect levels in the CMP process.

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract: A polishing pad assembly for use in a chemical-mechanical polishing apparatus comprises a polishing pad having at least a first aperture therethrough and a platen for supporting the polishing pad having a second aperture therethrough at least a portion of which is larger than the first aperture. A substantially transparent plug includes at least a first section having a first dimension for positioning substantially within the first aperture and at least a second section having a second dimension larger than the first dimension for positioning substantially within the second aperture. The optical plug is made of a polymeric material which may be press-fit through the platen into polishing pad.

Abstract: A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: A method of detecting a substrate in a carrier head for a chemical mechanical polishing system includes connecting a chamber in a carrier head to a pressure source, measuring the pressure in the chamber as a function of time, calculating the derivative of the pressure in the chamber, and determining whether the substrate is adjacent a substrate receiving surface in the carrier head from the derivative.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A semiconductor wafer processing apparatus, more specifically, an edge contact loadcup for locating a semiconductor workpiece or wafer into a chemical mechanical retaining ring utilizing a cone, wafer chuck and flexure. The cone aligns the wafer concentrically to the retaining ring. The wafer chuck, inside the cone, is restrained from moving laterally in respect to the cone by the flexure. The wafer, which is supported by the wafer chuck, is moved into the retaining ring by the wafer chuck after the cone has become aligned with the retaining ring. An adjustment mechanism is provided to ensure the co-planar orientation of the wafer and fixture. Other embodiments include a sensor for detecting the presence of the wafer on the chuck, and in the cone, and minimizes particulate contamination to the wafer.