Abstract: Systems, methods, and other embodiments associated with at-speed testing of static random access memory (SRAM) are described. In one embodiment, a method includes loading, into a multi-stage pipeline of memory devices, a control pattern for testing a static random access memory (SRAM). The SRAM is tested by generating a test input that is based, at least in part, on the control pattern from the multi-stage pipeline of flip-flops. The test input is provided to the SRAM over a series of clock cycles that are at a core clock speed of the SRAM.

Abstract: Systems, methods, and other embodiments associated with at-speed testing of static random access memory (SRAM) are described. In one embodiment, a method includes loading, into a multi-stage pipeline of memory devices, a control pattern for testing a static random access memory (SRAM). The SRAM is tested by generating a test input that is based, at least in part, on the control pattern from the multi-stage pipeline of flip-flops. The test input is provided to the SRAM over a series of clock cycles that are at a core clock speed of the SRAM.

Abstract: An apparatus, system, and method are disclosed for testing physical regions in a solid-state storage device. The method includes defining a physical storage region on solid-state storage media of a solid-state storage device. The physical storage region includes a subset of storage capacity of the solid-state storage media. The method includes implementing the physical storage region definition on a storage controller such that memory operations are bounded to the physical storage region. The method includes testing wear of solid-state storage media associated with the physical storage region using memory operations bounded to the physical storage region.

Abstract: A graphics memory device includes a memory array configured to store data for a display device comprising b*y rows by a*x columns of pixels, where b>a. The memory array is arranged in a*y rows by b*x columns of memory locations. Each memory location is adapted to store n-bit image data for one of the pixels of the display device. A memory location remapping circuit is adapted to map image data stored in the b*x columns of memory locations in the memory device to the a*x columns of the display device.

Abstract: Provided herein is a method and system for providing and analyzing unified data signaling that includes setting, or analyzing a state of a single indicator signal, generating or analyzing a data pattern of a plurality of data bits, and signal, or determine, based on the state of the single indicator signal and the pattern of the plurality of data bits, that data bus inversion has been applied to the plurality of data bits or that the plurality of data bits is poisoned.

Abstract: Systems and methods for hardware-based initialization of memory circuitry. In some embodiments, a method may include, after completion and/or independently of an integrity test of a memory circuit, generating a sequence of random logic values using a Built-In-Self-Test (BIST) circuit. The method may further include initializing the memory circuit with the sequence of random logic values using the BIST circuit. In some implementations, the sequence of logic values may be generated using memory circuit identification, chip identification, and/or clock information as a seed state.

Abstract: Embodiments of a register file test circuit are disclosed that may allow for determining write performance at low power supply voltages. The register file test circuit may include a decoder, a multiplexer, a frequency divider, and a control circuit. The decoder may be operable to select a register cell within a register file, and the control circuit may be operable to controllably activate the read and write paths through the selected register cell, allowing data read to be inverted and re-written back into the selected register cell.

Abstract: Disclosed are apparatus and techniques for indicating health of a memory system having a controller and nonvolatile memory array. In one embodiment, the invention pertains to a method for indicating health of a removable memory system that is removably coupled with a host device. After the memory system is coupled with a host device, a first health status is output via an external electrical or mechanical interface of the memory system. One or more health metrics of the memory system are monitored. After a first predefined limit is reached with respect to the one or more health metrics, a second health status is output via the external electrical or mechanical interface of the memory system. The first health status differs from the second health status.

Abstract: Memory devices that, in a particular embodiment, receive and transmit analog data signals representative of bit patterns of two or more bits such as to facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. Programming error correction code (ECC) and metadata into such memory devices includes storing the ECC and metadata at different bit levels per cell based on an actual error rate of the cells. The ECC and metadata can be stored with the data block at a different bit level than the data block. If the area of memory in which the block of data is stored does not support the desired reliability for the ECC and metadata at a particular bit level, the ECC and metadata can be stored in other areas of the memory array at different bit levels.

Abstract: A new, robust non-volatile memory (NVM) reset sequence is provided in accordance with at least one embodiment, which, after reading a Test NVM portion and overwriting NVM configuration registers' default values with the values read from the Test NVM portion, does a read integrity check. If the read integrity check passes, a reset process will conclude. Otherwise, if the read integrity check fails, the reset process will re-try reading the Test NVM and overwriting the NVM configuration registers' default values. If the read integrity check still fails after a maximum number of re-tries, a fail flag will be set, and the predetermined “safe” default values will be reloaded to the NVM configuration registers, thereby assuring that the NVM device is operational.

Abstract: A method for managing a flash storage device includes initiating a read request and reading requested data from a first storage block of a plurality of storage blocks in the flash storage device based on the read request. The method further includes incrementing a read count for the first storage block and moving the data in the first storage block to an available storage block of the plurality of storage blocks when the read count reaches a first threshold value.

Abstract: In one implementation, a memory device includes non-volatile memory, a memory controller communicatively coupled to the non-volatile memory over a first bus, and a host interface through which the memory controller communicates with a host device over a second bus. The memory device can also include a signal conditioner of the host interface adapted to condition signals to adjust a signal level of signals received over the second bus based on signal level data received from the host device, wherein the signal level data relates to a voltage level of signals generated by the host device to encode data transmitted across the second bus.

Abstract: In examples, apparatus and methods are provided for an integrated circuit. The integrated circuit includes a first integrated circuit portion having a main power domain and a second integrated circuit portion having a collapsible power domain. The integrated circuit also has a level shifter having an input coupled to the second circuit portion and an output coupled to the first integrated circuit portion. The level shifter is configured to hold constant the level shifter output when power to the collapsible power domain is collapsed. A quiescent drain current measurement circuit can be coupled to test at least a part of the second integrated circuit portion. A boundary scan register can be coupled between the level shifter output and the first integrated circuit portion. The integrated circuit can also include a power management circuit.

Abstract: Various embodiments include methods, apparatus, and systems to scan at least a portion of a memory device for potential errors when a condition for scanning is met. The condition may be dependent on one or more of a number of read operations, a number of write operations, time, and others. Other embodiments including additional methods, apparatus, and systems are disclosed.

Abstract: A method of transferring storage devices within a storage device testing system includes actuating an automated transporter to retrieve multiple storage devices presented for testing, and actuating the automated transporter to deliver each retrieved storage device to a respective test slot of the storage device testing system and insert each storage device in the respective test slot.

Abstract: A semiconductor apparatus includes first and second chips sharing first and second data channels. The first and second chips output normal data of the respective chips through the first and second data channels in a normal operation, and the first chip outputs test data of the first chip through the first data channel, and the second chip outputs test data of the second chip through the second data channel in a test operation.

Abstract: A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells; a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads; a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads; a path selection unit configured to transfer the first data, which are input through the first data pads, to both the first and second memory cells during a test mode; and a test mode control unit configured to compare the first data of the first and second memory cells, and to control at least one of the first data pads to denote a fail status based on a comparison result, during the test mode.

Abstract: In one embodiment, the present invention includes a de-serializer to receive serial data at a first rate and to output a parallel data frame corresponding to the serial data aligned to a frame alignment boundary in response to a phase control signal received from a feedback loop coupled between the de-serializer and a receiver logic coupled to an output of the de-serializer. Other embodiments are described and claimed.

Abstract: A semiconductor device includes a decoder, a first register unit, and a second register unit. The decoder generates first and second register control signals in response to an external test code signal. The first register unit is coupled to the decoder. The first register unit receives the first register control signal from the decoder. The first register unit outputs in series a plurality of test signals in response to the first register control signal. The second register unit is coupled to the first register unit. The second register unit receives the first and second register control signals from the decoder. The second register unit receives in series the plurality of test signals from the first register unit in response to the first register control signal. The second register unit outputs in parallel the plurality of test signals in response to the second register control signal.

Abstract: An integrated circuit is described that has a substrate with a memory array with dedicated support hardware formed on the substrate. An access wrapper circuit is coupled to address and data lines of the memory array and to control lines of the dedicated support hardware. The wrapper circuit is configured to provide an access port to the memory array. A test controller is formed on the substrate and coupled in parallel with the access wrapper circuit to the address and data lines of the memory array and to the control lines of the dedicated support hardware, wherein the test controller is operable to perform a test of the memory array by manipulating control signals to the support hardware in addition to those required to write data patterns into the memory array and to read the contents of the memory array.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine hardware is configurable for different tests. The test engine identifies a range of addresses through which to iterate a test sequence in response to receiving a software instruction indicating a test to perform. For each iteration of the test, the test engine, via the selected hardware, generates a memory access transaction, selects an address from the range, and sends the transaction to the memory controller. The memory controller schedules memory device commands in response to the transaction, which causes the memory device to execute operations to carry out the transaction.

Abstract: In a method of memory testing in a data processing system, in response to receiving a request for a hardware memory test during boot process of the data processing system, a controller accesses a stored past memory test result. The past memory test result includes at least a first number of test loops used in a past memory test, an identification of a first test pattern, and an error that occurred in the past memory test. The controller adjusts a second number of test loops and a second test pattern to be used in the hardware memory test according to the past memory test result. The controller then performs the hardware memory test according to the adjusted second number of test loops and the second test pattern.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine receives a command to cause it to generate transactions to implement a memory test. The command identifies the test to implement, and the test engine generates one or more memory access transactions to implement the test on the memory device. The test engine passes the transactions to the memory controller, which can schedule the commands with its scheduler. Thus, the transactions cause deterministic behavior in the memory device because the transactions are executed as provided, while at the same time testing the actual operation of the device.

Abstract: A method for repairing an integrated circuit comprises: fabricating a first circuit, the first circuit including a plurality of regular units and a plurality of redundant units, each of the regular units being identified by an address; performing a first test on the first circuit to determine if a defective regular unit is present; activating, if the defective regular unit is present, at least a first redundant unit to replace the defective regular unit, the first redundant unit being identified by an address of the defective regular unit; performing, if the at least first redundant unit is present, a second test on the first circuit to determine if the first redundant unit is defective; and activating at least a second redundant unit to replace the defective first redundant unit, the second redundant unit being identified by the address of the defective regular unit.

Abstract: Systems and methods are provided for testing a non-volatile memory, such as a flash memory. The non-volatile memory may be virtually partitioned into a test region and a general purpose region. A test application may be stored in the general purpose region, and the test application can be executed to run a test of the memory locations in the test region. The results of the test may be stored in the general purpose region. At the completion of the test, the test results may be provided from the general purpose region and displayed to a user. The virtual partitions may be removed prior to shipping the electronic device for distribution.

Abstract: A number of pulses to modify information stored in a given location in a plurality of locations is obtained for each of the plurality of locations in flash memory. A location having the largest number of pulses is selecting from the plurality of locations. The selected location is written to.

Abstract: Systems and methods for detection of defects on a magnetic storage medium. The method comprises: (1) receiving incoming detected data generated by reading information recorded on a storage medium, (2) identifying the defects in the storage medium based on comparison between the incoming detected data and a data pattern wherein the data pattern is predetermined; and (3) storing location information indicative of locations of the defects on the storage medium.

Abstract: Embodiments provide methods, systems, devices, and/or machine readable storage medium for memory built-in self testing (memory BIST) that may not require JTAG. Embodiments may provide less chip overhead through the use of one or more direct access pins. Embodiments may provide simple checks to determine if the memories on a chip are good or bad with minimal cost, for example. In some cases, the memory BIST may determine whether or not memories are good when the chip powers on. Some embodiments may also perform stress testing on the memories to force early life failures of the memories. Embodiments do not necessarily have to diagnose failures.

Abstract: A method capable of improving test coverage of chip pads, where the chip includes a control unit, a plurality of pads, and a storage unit, is disclosed. The storage unit includes a plurality of blocks. The method includes writing test data to a first predetermined block through a predetermined pad of the plurality of pads, controlling a first pad to read and store a predetermined datum of the test data from the first predetermined block, controlling the first pad to write the predetermined datum to a second predetermined block, reading the predetermined datum stored in the second predetermined block through the predetermined pad, and determining whether the first pad is passed.

Abstract: The present invention is related to systems and methods for harmonizing testing and using a storage media.

Abstract: A memory device includes a command decoder for generating a test selection code and a test setup data by decoding an external command and an external address, a non-volatile memory for storing an internal setup data, a counter for generating an internal selection code by counting a clock, a first selector for selecting the test selection code during a test mode operation, selecting the internal selection code during a boot-up operation, and transferring the selected selection code through a selection code transfer bus, a second selector for selecting the test setup data during the test mode operation, selecting the internal setup data that is outputted from the non-volatile memory during the boot-up operation, and transferring the selected selection code through a setup data transfer bus; and setup circuits for performing a setup operation based on the information transferred through the selection code transfer bus and the setup data transfer bus.

Abstract: Embodiments of systems and methods for testing memory are disclosed, where memory errors are detected, and, in at least one embodiment, memory units containing errors are prevented from being accessed by applications on a computing system.

Abstract: A communication control apparatus includes a storage unit and a processor. The storage unit stores, in association with a port number, first address information regarding apparatuses connected to a port identified by the port number. The processor receives a first affected address list containing second address information regarding apparatuses which may be affected by a trouble, extracts the first address information stored in the storage unit in association with a port number of a port via which the first affected address list has been received, selects third address information which is included in both the first and second address information, updates the first affected address list by replacing the second address information with the third address information to acquire a second affected address list, and transmits the second affected address list via each port other than the port via which the first affected address list has been received.

Abstract: A burn-in method for an embedded Multi Media Card (eMMC), and a test board using the same, and an eMMC tested by the same. The disclosed burn-in method comprises the steps as below: writing a test pattern to a flash memory of the eMMC; electrically connecting a command line of the eMMC to ground to operate the eMMC in a boot state; performing a burn-in procedure on the flash memory when the eMMC is in the boot state and the test pattern is recognized as being contained in the flash memory; and collecting a test report during the burn-in procedure, wherein the test report is stored in the flash memory.

Abstract: A method and apparatus for a computer memory test structure. An embodiment of a method for testing of a memory board includes testing a memory of the memory board, where testing the memory including use of a built-in self-test structure to provide a first test pattern for the memory. The method further includes testing an IO (input output) interface of the memory with a host, where testing of the IO interface includes use of the built-in self-test structure to provide a second test pattern for the IO interface.

Abstract: A debug system scans a scan memory element group having a plurality of scan memory elements which are connected in series in a semiconductor integrated circuit device and collects data in the scan memory element group. The semiconductor integrated circuit device has an end code register which is provided between an input terminal and an input side of the scan memory element group and holds an end code, a start code register which is provided between an output terminal and an output side of the scan memory element group and holds a start code, and a scan control circuit which controls shift operations of the scan memory element group, the end code register and the start code register, and outputs scan data to the output terminal.

Abstract: A program verification circuit comprises a failed state counting unit and a failed bit counting unit. The failed state counting unit counts failed program states among a plurality of program states, and generates a first program mode signal indicating whether counting of failed bits is required. The failed bit counting unit selectively counts failed bits in response to the first program mode signal, and generates a second program mode signal indicating whether a program operation is completed.

Abstract: Aspects of the invention provide for creating a built-in-self-test (BIST) organizational file for an integrated circuit (IC) chip. In one embodiment, a method includes: receiving a design file including a hierarchy of memory modules, each module including a plurality of memory wrappers; scanning each memory wrapper in each hierarchical level of memory modules for a BIST type; creating, based on the hierarchical level and the BIST type, an ordered list of memory wrappers; adding, based on the BIST type, a BIST engine for each memory wrapper listed in the ordered list; and adding a plurality of references statements to the ordered list to create the BIST organizational file.

Abstract: A DDR memory controller is described wherein a core domain capture clock is created by programmably delaying the core clock of the memory controller. The delay of this capture clock is typically calibrated during a power on the initialization sequence in concert with a DDR memory in a system environment, thereby minimizing the effects of system delays and increasing both device and system yield. An additional embodiment also includes programmably delaying the incoming dqs signal. To compensate for voltage and temperature variations over time during normal operation, a runtime dynamic calibration mechanism and procedure is also provided.

Abstract: A memory test device used to test performance of at least one memory module on an electronic device, are provided. The memory test device includes at least one adapter and a control unit. The adapter includes a plugging portion, a slot, and a switch circuit. The plugging portion is used to be plugged in a memory module slot of the electronic device. The slot is connected electrically to the plugging portion, is used for the memory module to plug in, and is capable of outputting a work voltage to the memory module when the adapter is plugged in the memory module slot and connected electrically to it. The switch circuit is connected electrically to the plugging portion and the slot. The control unit is connected electrically to the switch circuit of each adapter, where the control unit enables or disables the plugged memory module by controlling the switch circuit.

Abstract: A nonvolatile memory device is provided relating to a test operation for a Low Power Double-Data-Rate (LPDDR) nonvolatile memory device. The nonvolatile memory device comprises a command decoder configured to decode a test mode signal in a test mode to output program and erasure signals into a memory, an address decoder configured to decode a command address inputted through an address pin in the test mode to output a cell array address into the memory, and an overlay window configured to store a data inputted through a data pin in the test mode.

Abstract: A method for driving an electronic device stably is provided. The electronic device includes a power supply circuit to which power is fed by power sequentially supplied from a contactless power feeding device, and a plurality of loads to which power is sequentially supplied from the power supply circuit. Further, a method for driving an electronic device stably is provided. The electronic device includes a power supply circuit to which power is fed by power supplied from a contactless power feeding device, and one or more loads to which the power supply circuit repeatedly supplies power. The power supply potential Vdd is restored to more than or equal to 90% of the initial potential Vdd0 within an interval in which the power supply circuit is not connected to a load; then, the next load may be connected to the power supply circuit, and may be driven.

Abstract: A method and apparatus for accelerating a load point scanning process. In one embodiment, the method and apparatus comprise creating, at an initial scan, a detection area map identifying files referenced by detection areas. Upon a subsequent scan, determining whether the detection area has changed with respect to the detection area map. If the detection area map has changed, re-evaluating the detection area and repopulating the detection area map entry. In another embodiment, the method and apparatus avoid rescanning files as allowed using information in a file attribute cache.

Abstract: An embodiment of a manager includes at least one input node configured to receive information regarding a region of an integrated circuit, and a determiner configured to determine, in response to the information, a likelihood that the region will cause an error. For example, the region may include a memory, and contents of the memory may be transferred to another, more reliable memory, if the likelihood that the memory will cause an error in the data that it stores equals or exceeds a likelihood threshold.

Abstract: A SRAM (Static Random Access Memory) macro test flop circuit includes a flip-flop circuit, a scan control circuit, and an output buffer circuit. The flip-flop circuit includes a master latch circuit and a slave latch circuit. The master latch circuit includes a master storage node and a multiplexer. The slave latch circuit includes a slave storage node driven by the master latch. The scan control circuit includes a scan slave feed-forward circuit, a scan latch circuit, and a scan driver circuit driven by the scan feed-back circuit. The scan latch circuit includes a scan feed-back circuit, a scan storage node, and a scan feed-forward circuit driven from the slave latch. The output buffer circuit includes a master driver driven from the master latch circuit and a slave driver driven from the slave latch circuit.

Abstract: Aspects of the invention provide for creating a built-in-self-test (BIST) organizational file for an integrated circuit (IC) chip. In one embodiment, a method includes: receiving a design file including a hierarchy of memory modules, each module including a plurality of memory wrappers; scanning each memory wrapper in each hierarchical level of memory modules for a BIST type; creating, based on the hierarchical level and the BIST type, an ordered list of memory wrappers; adding, based on the BIST type, a BIST engine for each memory wrapper listed in the ordered list; and adding a plurality of references statements to the ordered list to create the BIST organizational file.

Abstract: Expedited memory drive self test, including: determining, by a drive self test module, a base block size for testing a memory drive; determining, by a drive self test module, a block group size for testing a memory drive; determining, by the drive self test module, a percentage of the memory drive to test; and for each block group size of memory in the memory drive: testing for media defects, by the drive self test module, a number of blocks in a block group that corresponds to the percentage of the memory drive to test.

Abstract: Representative locations of a non-volatile, solid-state memory of an apparatus store characterization data. An event during which elapsed time is not measured by the apparatus is determined. In response to the event, temporal degradation of the non-volatile, solid-state memory during the event is estimated based on electrical characteristics of the representative locations.

Abstract: A memory module includes a first rank, a second rank and a test control unit. The first rank includes a plurality of semiconductor memory devices configured to operate in response to a first chip selection signal. The second rank includes a plurality of semiconductor memory devices configured to operate in response to a second chip selection signal. The test control unit is configured to simultaneously enable the first and second chip selection signals to test the first and second ranks in a test mode.

Abstract: Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays. In another aspect of the invention, the MBST circuitry is used set the memory elements of the arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage.