Abstract: A carrier for single molecule detection includes a substrate and a metal layer. The substrate has a surface and includes a number of three-dimensional nano-structures at the surface. The metal layer is located on the surface of the substrate and covers the three-dimensional nano-structures. The enhancement factor of SERS of the carrier is relatively high.

Abstract: The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps: at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; and at least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150° C.

Abstract: The present invention provides methods for controlling defects in materials, including point defects, such as interstitials and vacancies, and extended defects, including dislocations and clusters. Defect control provided by the present invention allows for fabrication and processing of materials and/or structures having a selected abundance, spatial distribution and/or concentration depth profile of one or more types of defects in a material, such as vacancies and/or interstitials in a crystalline material. Methods of the invention are useful for processing materials by controlling defects to access beneficial physical, optical, chemical and/or electronic properties.

Abstract: Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided.

Abstract: An optical modulator that performs wide bandwidth optical modulation by using multiple Fabry-Perot resonant modes, and an apparatus for capturing a three-dimensional image including the optical modulator are provided. The optical modulator may include: a substrate; a first contact layer disposed on the substrate; a bottom distributed Bragg reflective (DBR) layer disposed on the first contact layer; an active layer disposed on the bottom DBR layer and includes a multiple quantum well layer; a top DBR layer disposed on the active layer; a cavity layer disposed in the top DBR layer; and a second contact layer disposed on the top DBR layer. Since the optical modulator achieves both a high contrast ratio and a wide bandwidth by using two or more Fabry-Perot resonant modes, the optical modulator may show a stable performance even when a resonant wavelength is changed during manufacture or due to an external environment such as temperature.

Abstract: In transistors requiring a high compressive strain, the germanium contents may be increased by applying a germanium condensation technique. In some illustrative embodiments, an oxidation process is performed in the presence of a silicon/germanium material obtained on the basis of selective epitaxial growth techniques, thereby increasingly oxidizing the silicon species, while driving the germanium into the lower lying areas of the active region, which finally results in an increased germanium concentration.

Abstract: The present invention refers to a multilayer barrier film comprising a substrate layer coated with a barrier layer, wherein the barrier layer is made of a material selected from the group consisting of a metal oxide, a metal carbide, a metal nitride and a metal oxynitride; a nanostructured metal compound layer arranged on the barrier layer; and a planarising layer arranged on the nanostructured layer, wherein the planarising layer comprises a nanostructured material which is distributed in a polymeric binder, wherein the nanostructured material is made of carbon, or a metal or a metal oxide or a mixture of the aforementioned substances. The present invention also refers to a method of obtaining those multilayer barrier films.

Abstract: Certain example embodiments of this invention relate to articles including anticondensation and/or low-E coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation and/or low-E coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.

Abstract: Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulting layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.

Abstract: An inputting fingertip sleeve includes a sleeve and an inputting end. The sleeve is configured to receive a finger. The sleeve includes at least one opening. The inputting end is located on the sleeve. The inputting end includes a supporter and a conductive layer. The conductive layer is located on a surface of the supporter. The conductive layer includes a carbon nanotube structure and a conductive layer. The carbon nanotube structure includes a plurality of carbon nanotubes. The conductive material is coated on a surface of each carbon nanotube to form a coating layer.

Abstract: A planar or non-planar quantum well device and a method of forming the quantum well device. The device includes: a buffer region comprising a large band gap material; a uniaxially strained quantum well channel region on the buffer region; an upper barrier region comprising a large band gap material on the quantum well channel region; a gate dielectric on the quantum well channel region; a gate electrode on the gate dielectric; and recessed source and drain regions at respective sides of the gate electrode, the source and drain regions including a junction material having a lattice constant different from a lattice constant of a material of the buffer region. Preferably, the buffer region comprises a Si1-xGex material, and the junction material comprises one of a Si1-yGey material where y is larger than x, or pure germanium, or tin germanium.

Abstract: The present invention is related to electrochemical energy generation devices including at least one electrode comprising an electrochemically active fluid that is enclosed within the cell, as well as related articles, systems, and methods. In some embodiments, the anode and/or cathode of the electrochemical energy generation devices described herein can be formed of an electrochemically active fluid, such as a semi-solid or a redox active ion-storing liquid. The electrochemical energy generation device can be configured such that the anode and/or cathode can be flowed into their respective electrode compartments, for example, during assembly. During operation, on the other hand, little or none of the electrochemically active fluid(s) are transported into or out of the energy generation device (e.g., out of the electrode compartments of the electrochemical energy generation device).

Abstract: Presented are one or more aspects and/or one or more embodiments of catalysts, methods of preparation of catalyst, methods of deoxygenation, and methods of fuel production.

Abstract: Presented are one or more aspects and/or one or more embodiments of catalysts, methods of preparation of catalyst, methods of deoxygenation, and methods of fuel production.

Abstract: Presented are one or more aspects and/or one or more embodiments of catalysts, methods of preparation of catalyst, methods of deoxygenation, and methods of fuel production.

Abstract: In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.

Abstract: There is provided a glucose responsive membrane comprising a nanoporous support substrate and a coating of a glucose responsive hydrogel attached to a surface of the nanoporous substrate. There are also provided methods for the preparation of the glucose responsive membrane and a medical device for the monitoring or regulation of glucose levels in a patient comprising the membrane.

Abstract: Implementations of encapsulated nanowires are disclosed.

Abstract: The present invention relates to a transparent glass body that comprises at least one antireflective glass surface (2) constructed on at least one surface of the transparent glass body and at least one glasslike protective coating (3) applied to the antireflective glass surface (2). The portion of reflected radiation ER is minimized and the transmitted radiation ET is increased accordingly. The contamination amount K can penetrate the antireflective surface only to a very reduced extent. Degradation caused by weathering is minimized. The present invention further relates to a method for the production as well as to uses of a transparent glass body.

Abstract: A rechargeable lithium battery that includes a negative electrode including a silicon-based negative active material; a positive electrode including a positive active material being capable of intercalating and deintercalating lithium; and a non-aqueous electrolyte, wherein the silicon-based negative active material includes a SiOx (0<x<2) core including Si grains and a continuous or discontinuous coating layer including Ag, the coating layer being disposed on the core.

Abstract: The present invention relates to a membrane comprising at least one molecular monolayer composed of low-molecular aromatics and cross-linked in the lateral direction, wherein the membrane has a thickness in the range from 1 to 200 nm and a perforation in the form of openings having a diameter in the range from 0.1 nm to 1 ?m, to a method for the production thereof, and to a use thereof.

Abstract: [Problem] A perpendicular magnetic disk with an improved SNR and an increased recording density by further improving crystal orientation of a preliminary ground layer formed of an Ni-base alloy is provided. [Solution] A typical structure of the perpendicular magnetic disk according to the present invention includes, on a base 110, a soft magnetic layer 130, a Ta alloy layer 140 provided on the soft magnetic layer 130, an Ni alloy layer 142 provided on the Ta alloy layer 140, a ground layer 150 provided on the Ni alloy layer 142 and having Ru as a main component, and a granular magnetic layer 160 provided on the ground layer 150. The Ta alloy layer 140 is a layer containing 10 atomic percent or more and 45 atomic percent or less Ta and having amorphous and soft magnetic properties.

Abstract: A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0?x1<x2?1” is found when a composition of the first AlGaN layer is represented by Alx1Ga1-x1N, and a composition of the second AlGaN layer is represented by Alx2Ga1-x2N. Negative charges exist at an upper surface of the AlGaN layer more than positive charges existing at a lower surface of the AlGaN layer.

Abstract: An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.

Abstract: A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current.

Abstract: A method for forming a photomask includes detecting a defect of the photomask which has a mirror layer formed on a first surface of a substrate, and forming a recess groove on a first layer which is formed on a second surface of the substrate, wherein the coordinate of the recess groove corresponds to the coordinate of the defect.

Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.

Abstract: The invention provides a STI structure and method for forming the same. The STI structure includes a semiconductor substrate; a first trench embedded in the semiconductor substrate and filled up with a first dielectric layer; and a second trench formed on a top surface of the semiconductor substrate and interconnected with the first trench, wherein the second trench is filled up with a second dielectric layer, a top surface of the second dielectric layer is flushed with that of the semiconductor substrate, and the second trench has a width smaller than that of the first trench. The invention reduces dimension of divots and improves performance of the semiconductor device.

Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 ?, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.

Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: Polymer-encapsulated pigment which includes a pigment core and a polymer shell, the shell being a polymerized polymer including hydrophobic monomers and acidic monomers, and also including a specific cross-linking agent.

Abstract: A light amplifying device for surface enhanced Raman spectroscopy is disclosed herein. The device includes a dielectric layer having two opposed surfaces. A refractive index of the dielectric layer is higher than a refractive index of a material or environment directly adjacent thereto. At least one opening is formed in one of the two opposed surfaces of the dielectric layer, and at least one nano-antenna is established on the one of the two opposed surfaces of the dielectric layer. A gain region is positioned in the dielectric layer or adjacent to another of the two opposed surfaces of the dielectric layer.

Abstract: A rechargeable lithium battery includes a positive electrode including a positive active material; a negative electrode including a negative active material; an electrolyte including a lithium salt and a non-aqueous organic solvent; and a separator interposed between the positive and negative electrodes and including a ceramic material having a first metal oxide-containing core and a second metal oxide shell disposed on the surface of the core.

Abstract: A device representing a reflector, for example an evanescent reflector or a multilayer interference reflector, with at least one reflectivity stopband is disclosed. A medium with means of generating optical gain is introduced into the layer or several layers of the reflector. The optical gain spectrum preferably overlaps with the spectral range of the reflectivity stopband. This reflector is attached to multilayer passive cavity structure made of semiconducting, and/or dielectric, and/or metallic materials with the inserted tools of achieving wavelength selection of the optical modes. For example, volume Bragg gratings, distributed feedback gratings or patterns, using of vertical optical cavities surrounded by multilayer Bragg reflectors can be applied. The optical modes of the passive optical cavity partially penetrate into the gain region of the reflector.

Abstract: A photomask includes a transparent substrate for passage of an exposure light, and a plurality of photomask pattern units formed on a surface of the transparent substrate. Each of the photomask pattern units includes a first light-blocking layer connected to the surface of the transparent substrate, and a second light-blocking layer formed on a surface of the first light-blocking layer opposite to the transparent substrate. The first and second light-blocking layers block the exposure light, or permit passage of light energy lower than threshold energy of photoresist on the substrate.

Abstract: A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.

Abstract: Provided is a hydrogel which comprises water as the main component at a high water content and has mechanical strength suitable for practical use and which exhibits high transparency and self-healing and shape-retaining properties. Also provided are both a material for the hydrogel and a novel polyionic dendrimer. A polyionic dendrimer which comprises a hydrophilic linear polymer as the core and polyester dendrons attached to both terminals of the linear polymer and in which cationic groups are bonded to the surfaces of the dendrons, said cationic groups being selected from the group consisting of guanidine group, thiourea group, and isothiourea group; a material for a hydrogel, which comprises the polyionic dendrimer and clay; and a hydrogel prepared using the material.

Abstract: A method of fabricating a semiconductor device includes sequentially forming a first gate insulating layer and a second gate insulating layer on a substrate, implanting impurity ions into the substrate and performing a first thermal process for activating the impurity ions to form a source and drain region, and forming a third gate insulating layer on the substrate after the first thermal process has been completed.

Abstract: An organic light emitting display device includes a substrate; a first electrode layer formed on the substrate; an emission structure layer formed on the first electrode layer; an electron injection layer (EIL) formed immediately on the emission structure layer and comprising a composite layer of LiF:Yb; and a second electrode layer formed on the EIL.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.

Abstract: Fabrication of yarns or other shaped articles from materials in powder form (or nanoparticles or nanofibers) using carbon nanotube/nanofiber sheet as a platform (template). This includes methods for fabricating biscrolled yarns using carbon nanotube/nanofiber sheets and biscrolled fibers fabricated thereby.

Abstract: A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20 is 2.8 or more.

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Abstract: The invention relates to a biosensor support comprising a cylinder (1) consisting of a non-electroconductive material and having: a through-hole (2) coaxial to the axis of the cylinder (1); a metal rod (3) arranged in said opening (2), with its upper end (31) level with the top base (11) of the cylinder (1); a layer/coating of noble metal (4) of between 1 and 1000 nanometres, arranged on the top base (11) of the cylinder, and a protector (5) consisting of a non-electroconductive material arranged on the layer/coating of noble metal (4) in the area where the layer (4) joins the metal rod (3), said protector covering a surface having a diameter (Ø2) larger than the diameter of the rod (3). The invention is applicable to the specific detection of substances in aqueous media.

Abstract: The present invention is related to magnetic pigments comprising a transparent flaky homogeneously composed substrate having two parallel major surfaces and a coating comprising maghemite, to a process for the production of said pigments as well as to their use.

Abstract: A honeycomb catalyst body includes a honeycomb structure and a catalyst. The honeycomb structure includes a porous honeycomb fired body having at least one cell wall defining a plurality of cells extending along a longitudinal direction of the porous honeycomb fired body. The plurality of cells is provided in parallel with one another. The honeycomb fired body contains silicon carbide particles and a silica layer formed on a surface of each of the silicon carbide particles. The silica layer has a thickness of from about 5 nm to about 100 nm measured by X-ray photoelectron spectroscopy. The catalyst contains at least one of oxide ceramics and zeolite. The catalyst is provided on a surface of the silica layer. An amount of at least one of the oxide ceramics and the zeolite is about 50 g/L or more.

Abstract: Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

Abstract: An improved structure of heterojunction field effect transistor (HFET) and a fabrication method thereof are disclosed. The improved HFET structure comprises sequentially a substrate, a channel layer, a spacing layer, a carrier supply layer, a Schottky layer, a Schottky capping layer formed by a higher energy gap material, a tunneling layer formed by a lower energy gap material, a first etching stop layer, and a first n type doped layer.