Abstract: A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.

Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Abstract: Conductive fine particles have core particle surfaces coated with a metal-plated coating film layer containing nickel and phosphorus and a multilayer conductive layer comprising a palladium layer as the outer surface. The phosphorus content in region A of the metal-plated coating film layer, at a distance of no greater than 20% of the thickness of the entire metal-plated coating film layer from the surface of the core particle, is 7-15 wt % of the entire region A. The phosphorus content in region B of the metal-plated coating film layer, at a distance of no greater than 10% of the thickness of the entire metal-plated coating film layer from the surface of the metal-plated coating film layer on the palladium layer side, is 0.1-3 wt % of the entire region B, and the phosphorus content of the entire metal-plated coating film layer is 7 wt % or greater.

Abstract: Methods of fabricating porous silicon by electrochemical etching and subsequent coating with a passivating agent process are provided. The coated porous silicon can be used to make anodes and batteries. It is capable of alloying with large amounts of lithium ions, has a capacity of at least 1000 mAh/g and retains this ability through at least 60 charge/discharge cycles. A particular pSi formulation provides very high capacity (3000 mAh/g) for at least 60 cycles, which is 80% of theoretical value of silicon. The Coulombic efficiency after the third cycle is between 95-99%. The very best capacity exceeds 3400 mAh/g and the very best cycle life exceeds 240 cycles, and the capacity and cycle life can be varied as needed for the application.

Abstract: A metal matrix composite is disclosed that includes graphene nanoplatelets dispersed in a metal matrix. The composite provides for improved thermal conductivity. The composite may be formed into heat spreaders or other thermal management devices to provide improved cooling to electronic and electrical equipment and semiconductor devices.

Abstract: A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.

Abstract: Provided is an antifouling acrylic board coated with a photocatalyst layer suitable for a surface of a base material made of an acrylic organic material. The antifouling acrylic board includes an acrylic base material, a silica layer constituted of silica as a main constituent and formed on a surface of the acrylic base material, and a photocatalyst layer including titanium oxide particles dispersed in a silica matrix and formed on the silica layer and further includes a binding layer constituted of a silane coupling agent and provided between the surface of the acrylic base material and the silica layer. The silane coupling agent is an epoxy silane coupling agent or a vinyl silane coupling agent.

Abstract: According to one embodiment, a wafer includes a substrate, a base layer, a foundation layer, an intermediate layer and a functional unit. The substrate has a major surface. The base layer is provided on the major surface and includes a silicon compound. The foundation layer is provided on the base layer and includes GaN. The intermediate layer is provided on the foundation layer and includes a layer including AlN. The functional unit is provided on the intermediate layer and includes a nitride semiconductor. The foundation layer has a first region on a side of the base layer, and a second region on a side of the intermediate layer. A concentration of silicon atoms in the first region is higher than a concentration of silicon atoms in the second region. The foundation layer has a plurality of voids provided in the first region.

Abstract: A method of fabricating a hot carrier energy conversion structure, and a hot carrier energy conversion structure. The method comprises forming an energy selective contact ESC comprising a tunnelling layer; forming a carrier generation layer on the ESC; and forming a semiconductor contact without a tunnelling layer on the carrier generation layer.

Abstract: Disclosed are a positive active material for a lithium secondary battery, a method of preparing the same, and a lithium secondary battery including the same. In particular, the positive active material has a carbon sheet having a structure including 1 to 200 polycyclic nano sheets comprising a plurality of hexagonal rings each having six carbon atoms condensed and substantially aligned in a plane containing the hexagonal rings, the polycyclic nano sheets layered in a vertical direction to the plane containing the hexagonal rings; and an olivine-based compound particle disposed on the surface of the carbon sheet.

Abstract: Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric. A portion of the tier of semiconductor material exposed by the opening is processed so that the portion is doped differently than the remaining semiconductor material in the tier. At least substantially all of the remaining semiconductor material of the tier is removed, leaving the differently doped portion of the tier of semiconductor material as a charge storage structure. A tunneling dielectric is formed on a first surface of the charge storage structure and an an intergate dielectric is formed on a second surface of the charge storage structure. Additional embodiments are also described.

Abstract: To provide a highly efficient organic light-emitting element. An extremely thin layer (a monomolecular film or the like) containing an organic light-emitting material such as an iridium complex is provided between a layer of an n-type organic material (an organic material having a high electron-transport property) and a layer of a p-type organic material (an organic material having a high hole-transport property). In a structure described above, in a layer of the organic light-emitting material, electrons are injected from the LUMO of the n-type organic material to the LUMO of the organic light-emitting material, and holes are injected from the HOMO of the p-type organic material to the HOMO of the organic light-emitting material, whereby the organic light-emitting material is brought into an excited state and emits light.

Abstract: The present invention is directed to a hybrid device comprising: an energy converting unit comprising a first electrode, a second electrode and an energy converting medium arranged between the first electrode and the second electrode, wherein the energy conversion takes place between the first electrode and the second electrode; an energy charge storing unit comprising a first electrode, a second electrode and an electrolyte medium; wherein the energy charge is stored between the first and the second electrode; the second electrode of the energy converting unit and the second electrode of the energy charge storing unit being a shared electrode electrically connecting the energy converting unit and the energy charge storing unit; and wherein the shared electrode comprises a metal and a nanostructured material. The present invention is also directed to a method of manufacturing such a hybrid device.

Abstract: A glass article having a low level of grainy appearance that can appear to have a shift in the pattern of the grains with changing viewing angle of a display, or “sparkle.” The glass article—which, in some embodiments, is a transparent glass sheet—has small-angle-scattering properties and/or distinctness-of-reflected-image (DOI), leading to improved viewability in display applications, especially under high ambient lighting conditions. In some embodiments, the antiglare surface of the glass sheet is an etched surface, with no foreign coating present on the antiglare surface.

Abstract: Graphene based materials are provided in connection with various devices and methods of manufacturing. As consistent with one or more embodiments, an apparatus includes a graphene sheet and a single-crystal structure grown on the graphene sheet, with the graphene sheet and single-crystalline structure functioning as an electrode terminal. In various embodiments, the single-crystalline structure is grown on a graphene sheet, such as by using precursor particles to form nanoparticles at the distributed locations, and diffusing and recrystallizing the nanoparticles to form the single-crystal structure.

Abstract: A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.

Abstract: A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.

Abstract: A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.

Abstract: The information recording medium 3 comprises an information layer having a metal layer 5 on a substrate 4, wherein concavo-convex portion is formed in the substrate to give main information such as image and voice, and the metal layer contains Al, Si and M (wherein M is at least one element selected from a group consisting of Cr and Ni) and enables sub-information to be additionally recorded therein at low cost by laser-beam 7 irradiation.

Abstract: Layers of a passivating material and/or containing luminescent centers are deposited on phosphor particles or particles that contain a host material that is capable of capturing an excitation energy and transferring it to a luminescent center or layer. The layers are formed in an ALD process. The ALD process permits the formation of very thin layers. Coated phosphors have good resistance to ambient moisture and oxygen, and/or can be designed to emit a distribution of desired light wavelengths.

Abstract: Use of two different methods, either each by itself or in combination, to enhance the stiffness, strength, maximum possible use temperature, and environmental resistance of such particles is disclosed. One method is the application of post-polymerization process steps (and especially heat treatment) to advance the curing reaction and to thus obtain a more densely crosslinked polymer network. The other method is the incorporation of nanofillers, resulting in a heterogeneous “nanocomposite” morphology. Nanofiller incorporation and post-polymerization heat treatment can also be combined to obtain the benefits of both methods simultaneously. The present invention relates to the development of thermoset nanocomposite particles.

Abstract: A fuel cell separator material, comprising a metal base and an Au plated layer formed on the surface of the metal base, wherein the Au plated layer has a thickness of 2 to 20 nm and arithmetic mean deviation of the profile (Ra) of 0.5 to 1.5 nm measured by an atomic force microscope within a crystal grain of the metal base.

Abstract: Ultra-thin porous films are deposited on a substrate in a process that includes laying down an organic polymer, inorganic material or inorganic-organic material via an atomic layer deposition or molecular layer deposition technique, and then treating the resulting film to introduce pores. The films are characterized in having extremely small thicknesses of pores that are typically well less than 50 nm in size.

Abstract: A battery separator includes a porous base material and a heat-resistant layer. The porous base material includes a first surface, a second surface opposed to the first surface, and a hole. The hole is formed in the porous base material and causes the first surface and the second surface to communicate with each other. The heat-resistant layer is configured to cover at least the first surface and a surface of the hole. The heat-resistant layer is formed of an inorganic material and deposited by an atomic layer deposition method.

Abstract: The present invention discloses a ceramic member and a manufacturing method thereof. The ceramic member comprises a ceramic substrate and an intermediate layer. Wherein, the intermediate layer is disposed on the ceramic substrate by vacuum depositing, and the intermediate layer is a carbonized metal (MxCy), an oxidized metal (MxOy) or a nitride metal (MxNy). Preferably, the intermediate layer could have a concentration gradient or a thickness gradient to further increase the adhesion between the metal layer deposited on the ceramic substrate.

Abstract: Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.

Abstract: The method comprises: using chemical vapor infiltration to form a first continuous interphase on the fibers of a fiber structure made of refractory fibers, the interphase having a thickness of no more than 100 nanometers; impregnating the fiber structure with a consolidation composition comprising a carbon or ceramic precursor resin; forming a fiber preform that is consolidated by shaping the impregnated fiber structure and using pyrolysis to transform the resin into a discontinuous solid residue of carbon or ceramic; using chemical vapor infiltration to form a second continuous interphase layer; and densifying the preform with a refractory matrix. This preserves the capacity of the fiber structure to deform so as to enable a fiber preform to be obtained that is of complex shape, while nevertheless guaranteeing the presence of a continuous interphase between the fibers and the matrix.

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.

Abstract: An electrode composite material includes an individual electrode active material particle and a protective film coated on a surface of the particle. A composition of the protective film is AlxMyPO4, AlxMy(PO3)3, or a combination thereof. M represents at least one of Cr, Zn, Mg, Zr, Mo, V, Nb, or Ta. A valence of M is represented by k, in which 0<x<1, 0<y<1, and 3x+ky=3. In addition, a molar ratio of an aluminum element, an M element, and a phosphorous element in AlxMyPO4 or AlxMy(PO3)3 is set by (MolAl+MolMetal):Molp equal to about 1:2.5 to about 1:4, MolAl is the amount of substance of the aluminum element, MolMetal is the amount of substance of the M element, and Molp is the amount of substance of the phosphorous element. A lithium ion battery includes the electrode composite material.

Abstract: A nano-hole array for improving contact conductance of a conductor element that consists of a first layer and a second layer is provided. The nano-hole array formed between the first and second layers comprises a plurality of holes. The contact conductance of the conductor element is enhanced by reducing the hole size of the hole array, increasing the occupation rate of the hole array, and performing thermal annealing.

Abstract: The embodiments described provide mechanisms for doping oxide in the STIs with carbon to make etch rate in the narrow and wide structures equal and also to make corners of wide STIs strong. Such carbon doping can be performed by ion beam (ion implant) or by plasma doping. The hard mask layer can be used to protect the silicon underneath from doping. By using the doping mechanism, the even surface topography of silicon and STI enables patterning of gate structures and ILD0 gapfill for advanced processing technology.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract: A method of making a crystalline molecular sieve of MFS framework type, preferably ZSM-57, from a synthesis mixture comprising at least one source of tetravalent element (Y), at least one source of trivalent element (X), at least one source of alkali metal hydroxide (MOH), at least one structure-directing-agent (R) and water, said alkali metal (M) comprising potassium, and having the following mole composition (expressed in terms of oxide): YO2:(p)X2O3:(q)OH?:(r)R:(s)H2O, wherein (p) is in the range from 0.005 to 0.05, (q) is in the range from 0.01 to 3, (r) is in the range from 0.03 to 2 and (s) is in the range from 10 to 75 (based on total weight of said synthesis mixture); wherein the crystals of molecular sieve formed having an average diameter (D) of less than or equal to 1.5 micron and an average thickness (T) of less than or equal to 300 nanometers.

Abstract: A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process.

Abstract: A perpendicular magnetic disk is provided. The disk includes, on a base and in the order from bottom, a first granular magnetic layer group including a plurality of magnetic layers each having a granular structure, a non-magnetic layer having Ru or a Ru alloy as a main component, a second granular magnetic layer group including a plurality of magnetic layers each having the granular structure, and an auxiliary recording layer having a CoCrPtRu alloy as a main component. Layers closer to a front surface among the plurality of magnetic layers included in the first granular magnetic layer group having an equal or smaller content of Pt. Layers closer to the front surface among the plurality of magnetic layers included in the second granular magnetic layer group having an equal or smaller content of Pt and having an equal or larger content of an oxide.

Abstract: There are provided a UV high-transmittance double-layer wire grid polarizer for a photo-alignment film and a method for manufacturing the same. The UV high-transmittance double-layer wire grid polarizer for a photo-alignment film includes: a substrate; an anti-reflection layer disposed on the substrate; a patterned photoresist layer disposed on the anti-reflection layer; and metal thin films disposed on the photoresist layer and the anti-reflection layer.

Abstract: According to one embodiment, a non-aqueous electrolyte secondary battery includes a positive electrode, a negative electrode spaced apart from the positive electrode, and a non-aqueous electrolytic solution. The negative electrode includes a collector, and a negative electrode layer formed on one or both surfaces of the collector and containing an active material having a potential of 0.5 V or more and 2 V or less based on metallic lithium at the insertion and the desorption of lithium. Metallic iron is formed on the surface of the negative electrode layer in an amount of 10 to 80% per unit area.

Abstract: A recording layer for optical information recording medium excellent in recording property, an optical information recording medium including the recording layer and a sputtering target useful for formation of the recording layer are provided. A recording layer for an optical information recording medium on which recording is performed through irradiation with laser light, the recording layer including an oxide of a metal of which an absolute value of the standard free energy of oxide formation per 1 mol of oxygen is larger than that of Pd (hereinafter referred to metal X) and a Pd oxide, wherein the Pd oxide includes a Pd monoxide and a Pd dioxide, and wherein a ratio of the Pd atom to a total of the metal X atom and the Pd atom which are contained in the recording layer is 4 to 85 atomic %.

Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.

Abstract: The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.

Abstract: An object of the present invention is to provide a sample substrate for laser desorption ionization mass spectrometry for LDI-MS which substrate enables mass spectrometric analysis of a sample correctly at high sensitivity without generating interference peaks upon irradiation of the sample to laser light and uniform application of the sample onto a base. Another object of the invention is to provide a mass spectrometer (device) employing the sample substrate. In the sample substrate for laser desorption ionization mass spectrometry, the sample substrate is formed of a base and carbon nanowalls having wall surfaces onto which a sample to undergo mass spectrometry is applied, wherein the carbon nanowalls are formed on the base so as to stand on the base. The surfaces of carbon nanowalls serve as an ionization medium and hydrophilized. By use of the sample substrate, mass spectrometry of a sample having a wide range (high to low) molecular weight can be reliably performed at high precision and sensitivity.

Abstract: Multi-junction solar cell devices which incorporate dilute nitrides to include a sub-cell in the 1 eV range in a conventional design for a solar cell. Sub-cells may be inserted within the intrinsic region of a conventional GaAs p-i-n solar cell either as a 3rd junction (1 eV) in a (Al)InGaP (1.9 eV)/GaAs(1.42 eV)/MQW(1 eV)/Ge(0.66 eV) quadruple junction device or as a triple junction configuration with a 1.1 eV MQW between GaInP (1.8 eV) and Ge(0.66 eV).

Abstract: Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: The present invention provides a process for producing nano graphene platelets (NGPs) that are both dispersible and electrically conducting. The process comprises: (a) preparing a pristine NGP material from a graphitic material; and (b) subjecting the pristine NGP material to an oxidation treatment to obtain the dispersible NGP material, wherein the NGP material has an oxygen content no greater than 25% by weight. Conductive NGPs can find applications in transparent electrodes for solar cells or flat panel displays, additives for battery and supercapacitor electrodes, conductive nanocomposite for electromagnetic wave interference (EMI) shielding and static charge dissipation, etc.

Abstract: Systems and methods for treating a fluid by passing fluid through a treatment structure, the fluid containing undesirable living things, the treatment structure containing electrically conductive nanomaterial with silver, flowing an electric current in the fluid in the treatment structure via the electrically conductive nanomaterial with silver or silver material to kill undesirable living things in the treatment structure, and killing undesirable things in the treatment structure.

Abstract: A coated article includes a substrate and a first coating formed over at least a portion of the substrate. The first coating includes a mixture of oxides including oxides of at least two of P, Si, Ti, Al and Zr. A photoactive functional coating is formed over at least a portion of the first coating. In one embodiment, the functional coating includes titanic.

Abstract: To provide a photocatalytic titanium oxide film having high photocatalytic properties, at low temperatures, quickly, and inexpensively, a seed layer comprising a noncrystalline metal compound film is formed on the surface of a base, which is made from glass, plastic or the like, and a crystalline metal compound film is formed by columnar growth on the seed layer; in producing this film, the photocatalytic titanium oxide film is produced by way of sputtering, at low cost, by way of low temperature and high speed film formation, without pre-processing with a plasma of an active gas, without post-processing, and without heat treatment.

Abstract: A metal cyanide complex catalyst and its preparation and application are disclosed. The formula of this catalyst is M1a[M2(CN)bL1c]d(X)m(L2)n·xSu·yL3·zH2O and its preparation method comprises: (A) adjusting pH of a mixed solution I? of L3, M3e[M2(CN)bL1c]f, de-ionized water I, alcohol and/or ether solvent to less than 7.0, and adding it into a mixed solution II? of M1(X)g salt, Su or Su precursor, de-ionized water II, stirring for reaction under 20° C.-120° C. for 0.5-200 hours, separating and drying to obtain a solid product; and (B) repeatedly dispersing the solid into an anhydrous organic solvent containing L2 to form a slurry, distilling, separating and drying to obtain the metal cyanide complex catalyst. The catalyst is useful in preparing polyethers, polycarbonates and polyesters by homopolymerization of epoxides, or copolymerization of epoxides with carbon dioxide or anhydrides.