Abstract: A rechargeable non-aqueous lithium-air battery is provided having a multilayered cathode structure which uses a functionized carbon paper base with tubular catalysts. The multilayer cathode has a sufficient pore size to prevent clogging of the cathode by reaction products and further has a hydrophobic coating to repel moisture. The stable electrolyte is made by ionic liquid and additives which have no reaction with discharge products and offers solubility for oxygen and lithium oxide.

Abstract: A nanofiber nonwoven comprising a plurality of roped fiber bundles having a length axis. The roped fiber bundles comprise a plurality of nanofibers having a median diameter of less than one micrometer, where at least 50% by number of the nanofibers are oriented within 45 degrees of the length axis of the roped fiber bundles. The nanofibers within the same roped fiber bundle are entangled together. The roped fiber bundles are randomly oriented within the nanofiber nonwoven and are entangled with other roped fiber bundles within the nanofiber nonwoven.

Abstract: This disclosure provides systems, methods, and apparatus related to a nanowire mesh solar fuels generator. In one aspect, a nanowire mesh solar fuels generator includes (1) a photoanode configured to perform water oxidation and (2) a photocathode configured to perform water reduction. The photocathode is in electrical contact with the photoanode. The photoanode may include a high surface area network of photoanode nanowires. The photocathode may include a high surface area network of photocathode nanowires. In some embodiments, the nanowire mesh solar fuels generator may include an ion conductive polymer infiltrating the photoanode and the photocathode in the region where the photocathode is in electrical contact with the photoanode.

Abstract: An apparatus and method for separating an analyte from a test sample, such as bacteria from blood components, based on their dielectric properties, localizing or condensing the analyte, flushing substantially all remaining waste products from the test sample, and detecting low concentrations of the analyte. Species movement is caused by a module array imparting opposing dielectrophoretic forces. The module array includes a plurality of microfluidic channels with connecting microfluidic waste channels for directing undesired material away from the analyte. An electric field is applied causing a positive dielectrophoretic force to the analyte to capture the analyte. The Clausius-Mossotti factor of the analyte is changed by flushing the analyte with a reference solution, which causes a negative dielectrophoretic force to facilitate release of the analyte. A field effect nanowire or nanoribbon sensor detects the analyte after capture.

Abstract: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.

Abstract: The invention relates to nanomaterials and assemblies including, a micrometer-scale spherical aggregate comprising: a plurality of one-dimensional nanostructures comprising titanium and oxygen, wherein the one-dimensional nanostructures radiate from a hollow central core thereby forming a spherical aggregate.

Abstract: Disclosed is a transparent electrode including a transparent substrate having thereon a conductive fiber, a conductive polymer and a water soluble binder resin, wherein a content of the water soluble binder resin is in the range of 1 to 200 weight % based on a weight of the conductive polymer.

Abstract: A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

Abstract: Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source.

Abstract: The present invention discloses a nanocomposite material having single-walled aluminosilicate nanotube in polymer, a membrane comprising such nanocomposite material, and the method of making the nanocomposite material, in which the composite material has high volume fraction of well-dispersed nanotubes. A gel-phased single-walled aluminosilicate nanotube is first prepared and then mixed with a polymer matrix to yield the composite material.

Abstract: The present invention belongs to the technical field of semiconductor devices and specifically relates to a method for manufacturing a nanowire tunneling field effect transistor (TFET). In the method, the ZnO nanowire required is developed in a water bath without the need for high temperatures and high pressure, featuring a simple solution preparation, convenient development and low cost, as well as constituting MOS devices of vertical structure with nanowire directly, thus omitting the nanowire treatment in the subsequent stage. The present invention has the advantages of simple structure, convenient manufacturing, and low cost, and control of the nanowire channel developed and the MOSFET array with vertical structure made of it though the gate, so as to facilitate the manufacturing of large-scale MOSFET array directly.

Abstract: An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.

Abstract: A nanofiber composite including a nanofiber formed of a hydrophobic polymer, a nanowire formed of a conductive or semiconductive organic material that is oriented in the nanofiber in the longitudinal direction of the nanofiber, and an ionic active material.

Abstract: A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.

Abstract: A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract: The invention generally relates to the ultrasmall MOx nanoparticles that are made in a solvothermal method using water soluble inorganic ammonium salt precursors of the MOx and organic amines, and slow heating to generate uniform ultrasmall MOx nanoparticles of 5 nm or less, as well as methods to make and use same.

Abstract: A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

Abstract: An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Abstract: Disclosed are nanowires and a nanowire synthesis method, with the nanowires synthesized by adding first and second solutions into a vessel containing a porous template, the first solution added on one side of the porous template and the second solution added on another side of the porous template. The first solution contains a metal reagent comprising at least one of a transition metal, an actinide and a lanthanide metal, and the second solution contains a reducing agent.

Abstract: A low-cost method is provided for forming a photovoltaic device, which is a high-performance nanostructured multijunction cell. The multiple P-N junctions or P-I-N junctions are contiguously joined to form a single contiguous P-N junction or a single contiguous P-I-N junction. The photovoltaic device integrates vertically-aligned semiconductor nanowires including a doped semiconductor material with a thin silicon layer having an opposite type of doping. This novel hybrid cell can provide a higher efficiency than conventional photovoltaic devices through the combination of the enhanced photon absorptance, reduced contact resistance, and short carrier transport paths in the nanowires. Room temperature processes or low temperature processes such as plasma-enhanced chemical vapor deposition (PECVD) and electrochemical processes can be employed for fabrication of this photovoltaic device in a low-cost, scalable, and energy-efficient manner.

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

Abstract: According to one embodiment, a conductive material includes a carbon substance and a metallic substance mixed with and/or laminated to the carbon substance. The carbon substance has at least one dimension of 200 nm or less. The carbon substance includes a graphene selected from single-layered graphene and multi-layered graphene, a part of carbon atoms constituting the graphene is substituted with a nitrogen atom. The metallic substance includes at least one of a metallic particle and a metallic wire.

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

Abstract: According to one embodiment, the transparent electrode laminate includes a transparent substrate and an optically transparent electrode layer formed on the transparent substrate. The electrode layer includes a three-dimensional network of metal nanowires with a diameter of 20 to 200 nm. Each metal nanowire has a reaction inorganic product of a metal constituting the metal nanowire on a part of a surface thereof.

Abstract: According to one embodiment, the transparent electrode laminate includes a transparent substrate and an electrode layer which is formed on the transparent substrate and includes a three-dimensional network of metal nanowires. The electrode layer includes a first conductive region and a second conductive region adjacent to the first conductive region. Surfaces of the metal nanowires in the first conductive region are reacted to form reaction products. Surfaces of the metal nanowires in the second conductive region are unreacted. The second region has conductivity higher than that of the first conductive region and an optical transparency.

Abstract: A photovoltaic cell comprises a first electrode that includes a first transparent conductive substrate, a first layer having a plurality of first semiconductor nanofibers, and a second layer having a plurality of second semiconductor super-fine fibers, the first semiconductor nanofibers having an average diameter smaller than an average diameter of the second semiconductor super-fine fibers, a light absorbing material adsorbed to at least some of the first semiconductor nanofibers and second semiconductor super-fine fibers, a second electrode includes a second transparent conductive substrate, and electrolytes dispersed in the first and second layers.

Abstract: According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

Abstract: A composition comprising a material at least partially enclosed by a tubular, spherical or planar nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

Abstract: A high capacity electrode includes a conducting substrate on which a plurality of support filaments are disposed. Each of the support filaments have a length substantially greater than their width and may include, for example, a carbon nano-tube (CNT), a carbon nano-fiber (CNF), and/or a nano-wire (NW). The support filaments are coated with a material, such as silicon, having a greater ion absorbing capacity greater than the neat support filaments. A trunk region of the support filaments proximate to the substrate is optionally kept free of ion absorbing material. This trunk region allows for the expansion of the ion absorbing material without detaching the support filaments form the substrate.

Abstract: The present invention discloses a hexagonal programmable array based on a silicon nanowire field effect transistor and a method for fabricating the same. The array includes a nanowire device, a nanowire device connection region and a gate connection region, wherein, the nanowire device has a cylinder shape, and includes a silicon nanowire channel, a gate dielectric layer, and a gate region, the nanowire channel being surrounded by the gate dielectric layer, and the gate dielectric layer being surrounded by the gate region; the nanowire devices are arranged in a hexagon shape to form programming unit, the nanowire device connection region is a connection node of three nanowire devices and secured to a silicon supporter. The present invention can achieve a complex control logic of interconnections and is suitable for a digital/analog and a mixed-signal circuit having a high integration degree and a high speed.

Abstract: The present invention provides a hybrid powder of halloysite nanotubes and light-scattering nanoparticles, a method for preparing the same, and a UV-screening cosmetic composition containing the same as an active ingredient. The hybrid powder of halloysite nanotubes and light-scattering nanoparticles according to the present invention, in which the light-scattering nanoparticles are loaded into the halloysite nanotubes, can prevent the light-scattering nanoparticles from penetrating the skin, which minimizes side effects, and has excellent UV-screening effect. Thus, the hybrid powder of halloysite nanotubes and light-scattering nanoparticles according to the present invention can be effectively used as a UV-screening cosmetic composition.

Abstract: A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

Abstract: A high capacity electrode includes a conducting substrate on which a plurality of support filaments are disposed. Each of the support filaments have a length substantially greater than their width and may include, for example, a carbon nano-tube (CNT), a carbon nano-fiber (CNF), and/or a nano-wire (NW). The support filaments are coated with a material, such as silicon, having a greater ion absorbing capacity greater than the neat support filaments. A trunk region of the support filaments proximate to the substrate is optionally kept free of ion absorbing material. This trunk region allows for the expansion of the ion absorbing material without detaching the support filaments form the substrate.

Abstract: An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.

Abstract: The present invention discloses a nanowire fabrication method and a semiconductor element using a nanowire fabricated thereby. The method of the present invention comprises steps: providing a substrate; sequentially depositing a silicon dioxide layer and a silicon nitride layer on the substrate; forming a patterned photoresist layer on the silicon nitride layer; using the patterned photoresist layer as a mask to etch the silicon nitride layer and the silicon dioxide layer with the substrate partly etched away to form a protrusion; removing the patterned photoresist layer to form an isolation layer; removing the silicon nitride and the silicon dioxide layer, sequentially depositing a dielectric layer and a polysilicon layer; and anisotropically etching the polysilicon layer to form nanowires on a region of the dielectric layer, which is around sidewalls of the protrusion.

Abstract: Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For one preferred embodiment, a canopy-style tip-side electrode layer contacts the tip ends of the PV nanowires and is separated from the substrate surface layer by an air gap layer, the PV nanowires being disposed within the air gap layer. For another preferred embodiment, a tip-side electrode layer is disposed upon a layer of optically transparent, electrically insulating solid filler material that laterally surrounds the PV nanowires along a portion of their lengths, wherein an air gap is disposed between the solid filler layer and the substrate surface layer. Methods for fabricating the nanowire-based photovoltaic energy conversion devices are also described.

Abstract: Systems and methods for the formation of nanostructures, including carbon-based nanostructures, are generally described. In certain embodiments, substrate configurations and associated methods are described.

Abstract: Compositions comprising a polymer-containing matrix and a filler comprising a cage compound selected from borane cage compounds, carborane cage compounds, metal complexes thereof, residues thereof, mixtures thereof, and/or agglomerations thereof, where the cage compound is not covalently bound to the matrix polymer. Methods of making and applications for using such compositions are also disclosed.

Abstract: Novel electrospun nanofibers and nanofibrous membranes, methods of manufacturing the same, and methods of using the same are provided. The nanofibers include a cactus mucilage, such as mucilage from Opuntia ficus-indica. An organic polymer can be added to the cactus mucilage before electrospinning The nanofibrous membranes can be used in water filtration.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.

Abstract: Magnetic array platforms such as nano or micro-wire networks that produce trapping, manipulation, and transport of micro- or nano-scale particles such as non-biological entities such as magnetic particles and cells, viruses, DNA, proteins, and other biological entities having magnetic particles labeled or tethered thereto are provided. Methods of manipulating, transporting, and sorting micro- or nano-scale particles are described.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

Abstract: A gas sensing device (nanosensor) includes a substrate with at least a pair of conductive electrodes spaced apart by a gap, and an electrochemically functionalized semiconductive nanomaterial bridging the gap between the electrodes to form a nanostructure network. The nanomaterial may be single-walled carbon nanotubes (SWNTs) functionalized by the deposition of nanoparticles selected from the group consisting of an elemental metal (e.g., gold or palladium), a doped polymer (e.g., camphor-sulfonic acid doped polyaniline), and a metal oxide (e.g. tin oxide). Depending on the nanoparticles employed in the functionalization, the nanosensor may be used to detect a selected gas, such as hydrogen. mercury vapor, hydrogen sulfide, nitrogen dioxide, methane, water vapor, and/or ammonia, in a gaseous environment.

Abstract: Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

Abstract: The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

Abstract: A memory cell is provided including a tunnel dielectric layer overlying a semiconductor substrate. The memory cell also includes a floating gate having a first portion overlying the tunnel dielectric layer and a second portion in the form of a nanorod extending from the first portion. In addition, a control gate layer is separated from the floating gate by an intergate dielectric layer.

Abstract: A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanaostructure and metal elements is provided.