Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.

Abstract: Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench.

Abstract: The present invention relates to coated, absorbent, freestanding assemblies comprising inorganic nanowires, articles of manufacture comprising the same, processes of producing the same and methods of use thereof. The assemblies of this invention are useful in various applications, including removal of organics or hydrophobic materials, and waterproofing applications.

Abstract: A chopped carbon fiber is made of a carbon fiber, which is coated with a sizing being formed of a heat resistant polymer or a precursor of the heat resistant polymer.

Abstract: Disclosed is a Nanotube Detangler capable of aligning and ordering the constituent nanotubes, nanowires and/or nanoparticles of a filament leading to greater tensile strength of the filament and subsequent threads or structures made from it. The technique exploits ion infusion as a mechanism to force the tangle of the nanotubes, nanowires and/or nanoparticles apart. Included in the invention are alignment enhancement technologies such as heating, vibration, electromagnetic, particle bombardment and chemical means. The present invention recognizes that aligned and ordered nanotubes, nanowires and nanoparticles in a filament will increase the conductivity of the filament and enable the fabrication of electric conductors, wires and circuit components. Such breakthroughs in strength and conductivity of filaments of nanotubes, nanowires and/or nanoparticles will revolutionize life on Earth.

Abstract: A rechargeable lithium cell comprising: (a) an anode; (b) a cathode comprising a hybrid cathode active material composed of a graphene material and a phthalocyanine compound, wherein the graphene material is in an amount of from 0.1% to 99% by weight based on the total weight of the graphene material and the phthalocyanine compound combined; and (c) a porous separator disposed between the anode and the cathode and electrolyte in ionic contact with the anode and the cathode. This secondary cell exhibits a long cycle life and the best cathode specific capacity and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: The present disclosure provides an article having (a) a substrate having a first nanostructured surface that is antireflective when exposed to air and an opposing second surface; and (b) a conductor micropattern disposed on the first surface of the substrate, the conductor micropattern formed by a plurality of traces defining a plurality of open area cells. The micropattern has an open area fraction greater than 80% and a uniform distribution of trace orientation. The traces of the conductor micropattern have a specular reflectance in a direction orthogonal to and toward the first surface of the substrate of less than 50%. Each of the traces has a width from 0.5 to 10 micrometer. The articles are useful in devices such as displays, in particular, touch screen displays useful for mobile hand held devices, tablets and computers.

Abstract: Methods for integrating the production of cellulose nanocrystals (CNC) and cellulose nanofibrils (CNF) from cellulose are provided. The methods use milder acid hydrolysis conditions than those for maximal CNC production to achieve reduced degradation of cellulose into soluble sugars. Also provided are negatively charged cellulosic solid residues (CSRs) in the form of cellulose fibers (CF) and/or cellulose microfibrils (CMF) during the acid hydrolysis, as well as CNFs fabricated from the CSRs.

Abstract: The invention concerns a paper for smoking article, in particular for a cigarette, comprising areas treated with a coating formulation adapted to reduce the ignition propensity of said treated areas which comprises nanoparticles of cellulose having a median dimension (d50) equal to or less than five micrometers.

Abstract: The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared by using a porous nano template without any high temperature process and said nanowires may be used in the phase change memory device by using their phase change characteristics to identify memory characteristics.

Abstract: A solid-state hole transport composite material (ssHTM) is provided made from a p-type organic semiconductor and a dopant material serving as a source for either sodium (Na+) or potassium (K+) ions. The p-type organic semiconductor may be molecular (a collection of discrete molecules, that are either chemically identical or different), oligomeric, polymeric materials, or combinations thereof. In one aspect, the p-type organic semiconductor is 2,2?,7,7?-tetrakis(N,N-di-p-methoxyphenylamine)-9,9?-spirobifluorene (Spiro-OMeTAD). The dopant material is an inorganic or organic material salt. A solid-state dye-sensitized solar cell (ssDSC) with the above-described ssHTM, is also provided.

Abstract: A transparent electrode and method for manufacturing the same are disclosed. The major integrants of the transparent electrode comprise a graphene and a nanofiber. The nanofiber exhibits a light-permeable network structure to increase the light transmittance of the transparent electrode. The graphene is absorbed on the surface of the nanofiber to form a conductive light-permeable network structure. And the unique properties of the graphene lead an improvement of the mechanical strength property of the transparent electrode.

Abstract: Method of forming lithium-containing electrolytes are provided using wet chemical synthesis. In some examples, the lithium containing electrolytes are composed of ?-Li3PS4 or Li4P2S7. The solid electrolyte may be a core shell material. In one embodiment, the core shell material includes a core of lithium sulfide (Li2S), a first shell of ?-Li3PS4 or Li4P2S7, and a second shell including one of ?-Li3PS4 or Li4P2S7 and carbon. The lithium containing electrolytes may be incorporated into wet cell batteries or solid state batteries.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being filled at least partially with a high specific surface area material having a specific surface area greater than 5 m2/g, and characterized in that said high specific surface area material is selected from nanotubes or nanofibers. These nanotubes or nanofibers are preferably selected in the group consisting of carbon nanofibers or nanotubes, ?-SiC nanofibers or nanotubes, TiO2 nanofibers or nanotubes. They may be deposited on an intermediate structure selected in the group consisting of glass fibers, carbon fibers, SiC foams, carbon foams, alveolar ?-SiC foams, said intermediate structure filling the reaction chamber of said reactor at least partially.

Abstract: An electronic element includes a carbon nanotube film, at least one first electrode and at least one second electrode spaced from the at least one first electrode. The carbon nanotube film includes a number of carbon nanotube linear units spaced from each other, and a number of carbon nanotube groups. The carbon nanotube linear units extend along a first direction to form a number of first conductive paths. The carbon nanotube groups are combined with the carbon nanotube linear units by van der Waals force in a second direction intercrossed with the first direction, to form a number of second conductive paths. The carbon nanotube groups between adjacent carbon nanotube linear units are spaced from each other in the first direction. The at least one first and second electrodes are electrically connected with the carbon nanotube film through the first conductive paths or the second conductive paths.

Abstract: Electrically conductive nanowires incorporated within scaffolds enhance tissue growth, bridge the electrically resistant pore walls and markedly improve electrical communication between adjacent cardiac cell bundles. Integration of conducting nanowires within 3D scaffolds should improve the therapeutic value of cardiac patches. Examples demonstrate efficacy of gold nanowires in alginate matrices seeded with cardiomyocytes.

Abstract: Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor. In embodiments of the invention, the transistor channel regions are comprised of germanium, silicon, a combination of germanium and silicon, or a combination of germanium, silicon, and tin and the source and drain regions are comprised of a doped III-V compound semiconductor material. Embodiments of the invention are useful in a variety of transistor structures, such as, for example, trigate, bigate, and single gate transistors and transistors having a channel region comprised of nanowires or nanoribbons.

Abstract: Disclosed is a method for nanostructure synthesis that includes growing nanostructures on a layered structure compound at a low temperature using a solution containing a solvent and at least one precursor. The method can include synthesizing and assembling nanowires in essentially the same method step. Disclosed nanostructures and nanowires are substantially uniform in diameter and single crystal. Nanowires can intersect to form networks and can be covalently bonded at points of intersection. Disclosed nanowire networks can be substantially uniform and can form an ordered network. Nanowire networks can be used to fabricate electronic and optical devices.

Abstract: A nanowire device includes a nanowire having differently functionalized segments. Each of the segments is configured to interact with a species to modulate the conductance of a segment. The nanowire is grown from a single catalyst and the segments include a first segment at a non-linear angle from a second segment.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate.

Abstract: This invention provides a nanoplasmonic molecular ruler, which can perform label-free and real-time monitoring of nucleic acid (e.g., DNA) length changes and perform nucleic acid footprinting. In various embodiments the ruler comprises a nucleic acid attached to a nanoparticle, such that changes in the nucleic acid length are detectable using surface plasmon resonance. The nanoplasmonic ruler provides a fast and convenient platform for mapping nucleic acid-protein interactions, for nuclease activity monitoring, and for other footprinting related methods.

Abstract: A wearable remote electrophysiological monitoring system. The system includes a garment having at least one nanostructured, textile-integrated electrode attached thereto; a control module in electrical communication with the at least one nanostructured, textile-integrated sensor; and a remote computing system in communication with the control module.

Abstract: Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Abstract: Communication to or from a nanodevice is provided with a nanostructure-based antenna, preferably formed from, but not limited to, a single wall nanotube (SWNT). Other nanostructure-based antennas include double walled nanotubes, semiconducting nanowires, metal nanowires and the like. The use of a nanostructure-based antenna eliminates the need to provide a physical communicative connection to the nanodevice, while at the same time allowing communication between the nanodevice and other nanodevices or outside systems, i.e., systems larger than nanoscale such as those formed from semiconductor fabrication processes such as CMOS, GaAs, bipolar processes and the like.

Abstract: Disclosed are an electrode for a fuel cell, a method of preparing the fuel cell electrode, a membrane-electrode assembly including the fuel cell electrode, and a fuel cell system including the fuel cell electrode. The electrode includes an electrode substrate having a conductive substrate and a layer-by-layer assembled multi-layer disposed on a side of the conductive substrate and a bilayer including a polymer electrolyte or a conductive nanoparticle, and a catalyst layer disposed on the electrode substrate.

Abstract: A method of operating a lithium-ion cell comprising (a) a cathode comprising a carbon or graphitic material having a surface area to capture and store lithium thereon; (b) an anode comprising an anode active material; (c) a porous separator disposed between the two electrodes; (d) an electrolyte in ionic contact with the two electrodes; and (e) a lithium source disposed in at least one of the two electrodes to obtain an open circuit voltage (OCV) from 0.5 volts to 2.8 volts when the cell is made; wherein the method comprises: (A) electrochemically forming the cell from the OCV to either a first lower voltage limit (LVL) or a first upper voltage limit (UVL), wherein the first LVL is no lower than 0.1 volts and the first UVL is no higher than 4.6 volts; and (B) cycling the cell between a second LVL and a second UVL.

Abstract: According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided.

Abstract: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Abstract: A dielectric material is disclosed comprising a plurality of substantially longitudinally oriented wires which are coupled together, wherein each of the wires includes a conductive core comprising a first material and one or more insulating shell layers comprising a compositionally different second material disposed about the core. In one embodiment, a dielectric layer is disclosed comprising a substrate comprising an insulating material having a plurality of nanoscale pores defined therein having a pore diameter less than about 100 nm, and a conductive material disposed within the nanoscale pores.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: Disclosed is a composite material for shielding broadband electromagnetic waves and a method for its production. More particularly, a composite material for shielding broadband electromagnetic waves that absorbs low frequency electromagnetic waves and reflects high frequency electromagnetic waves is disclosed. The composite material for shielding broadband electromagnetic waves may be a polymer composite prepared by mixing a matrix composition including a matrix-forming polymer impregnated with a carbonaceous conductive nano material with a filler composite including a filler-forming polymer impregnated with a magnetic material. The magnetic material impregnated in the filler-forming polymer may be distributed in the matrix composite.

Abstract: Synthetic polymer substrates comprising a hierarchical surface structure of multiple domes and multiple pillars on said domes, wherein said substrate is a synthetic polymer film, said domes have diameters in the range from about 5 ?m to about 400 ?m, heights in the range from about 2.5 ?m and about 500 ?m, and said pillars have diameters in the range from about 20 nm to about 5 ?m and aspect ratios of from about 2 to about 50, and methods of making and using them.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A sensor for detection of target nucleic acid comprising (a) a semiconductor nanostructure; and (b) a nucleic acid detection probe immobilized on the semiconductor nanostructure capable of hybridizing with the target nucleic acid, the detection probe comprising a polymer with a substantially non-ionic backbone.

Abstract: Provided are a lithium manganese oxide positive active material for a lithium ion secondary battery and a lithium ion secondary battery including the same. The lithium manganese oxide positive active material includes a spinel lithium manganese oxide of three or more types of particles having different sizes mixed therein, wherein first type particles have an average diameter of 5 ?m or greater, second type particles have an average diameter of 1 ?m or less, third type particles have an average diameter of 200 nm or less, and the average diameter of the second type particles is greater than that of the third type particles.

Abstract: Techniques for fabricating nanowire-based devices are provided. In one aspect, a method for fabricating a semiconductor device is provided comprising the following steps. A wafer is provided having a silicon-on-insulator (SOI) layer over a buried oxide (BOX) layer. Nanowires and pads are etched into the SOI layer to form a ladder-like structure wherein the pads are attached at opposite ends of the nanowires. The BOX layer is undercut beneath the nanowires. The nanowires and pads are contacted with an oxidizing gas to oxidize the silicon in the nanowires and pads under conditions that produce a ratio of a silicon consumption rate by oxidation on the nanowires to a silicon consumption rate by oxidation on the pads of from about 0.75 to about 1.25. An aspect ratio of width to thickness among all of the nanowires may be unified prior to contacting the nanowires and pads with the oxidizing gas.

Abstract: The present invention relates to methods of generating liquidphobic surfaces, and surfaces prepared by these methods. The methods include generating sub-micron-structured surfaces and coating these surfaces with a liquidphobic coating, such as a hydrophobic coating.

Abstract: Provided are a method of isolating and purifying metal nanowires from a crude and complex reaction mixture that includes relatively high aspect ratio nanostructures as well as nanostructures of low aspect ratio shapes, and conductive films made of the purified nanostructures.

Abstract: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source region and the first drain region, where the nanowire channel members include the first semiconductor layer, and opposing sidewall surfaces parallel to {100} crystalline planes and opposing faces parallel to the {110} crystalline planes. The substrate further includes a second source and drain regions having the characteristics of the first source and drain regions, and a single channel member suspended by the second source region and the second drain region and having the same characteristics as the nanowire channel members. A width of the single channel member is at least several times a width of a single nanowire member.

Abstract: A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26) and a drain electrode (30) at each end of each nanowire (24) symmetrically relative to the gate electrode of each elementary transistor implemented on a nanowire; creating a gate electrode by depositing a layer (38) of conductive material around a layer (36) of dielectric material that surrounds a portion of each nanowire (24), a single conductive layer (38) being used for all of the nanowires and the thickness of the conductive layer corresponding to the gate length of the transistor device; and insulating each electrode with a planar layer (32, 34) of a dielectric material in order to form a nanoscale gate and in order to insulate the contacts of each elementary transistor between the gate and the source and the gate and the drain.

Abstract: Aligned carbon nanotube-polymer composite materials, systems and methods include a substrate that carries an adhesive coating thereon. A plurality of carbon nanostructures are adhered to the substrate by the adhesive coating, such that the nanostructures are formed into a predetermined architecture, such that the architecture of the nanostructures defines at least one orientation for a plurality of nanostructures, and defies the approximate spacing between the nanostructures and/or groups of nanostructures. The adherence of the carbon nanostructures in the adhesive coating stabilizes the predetermined architecture of the nanostructures, such that the architecture renders the composite material superhydrophobic.

Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract: The present invention relates to a catalyst-containing nanofiber composition, comprising a ceramic nanofiber having a plurality of metal catalysts wherein the metal catalysts exist as dispersed particles partially embedded in the nanofiber and cover from about 1% to about 90% of the surface area of the ceramic nanofiber.

Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

Abstract: A reflective polarizing film includes a transparent substrate, and a reflective layer unidirectionally elongated to be formed on one side of the transparent substrate, wherein the reflective layer is composed of nanowire particles, and 80% or more of the nanowire particles are aligned at an angle of ?10° to 10° with respect to an elongation direction.

Abstract: Disclosed is a method for preparing nickel or palladium nanoparticles supported on a carbon support. To a mixture solution wherein a stabilizer is dissolved in 1,2-propanediol, a carbon support is added to prepare a dispersion. Then, a precursor solution wherein a nickel or palladium precursor dissolved in 1,2-propanediol is mixed therewith and stirred. Then, nickel or palladium nanoparticles supported on the carbon support are prepared by reduction. The disclosed method for preparing nickel or palladium nanoparticles supported on a carbon support allows preparation of nanoparticles with narrow particle size distribution and good dispersibility through a simple process and the resulting nickel or palladium nanoparticles may be usefully applied, for example, as electrode materials of fuel cells.