Abstract: Compositions and methods for fabrication or synthesis of high aspect ratio (up to >150) CdS:Mn/ZnS core/shell nanowires (CSNWs) is disclosed for the first time. The CSNW solvothermal synthesis involved two steps—the formation of Mn doped CdS core followed by the growth of a ZnS outer shell. The nanowire growth process is engineered in such a way that the ZnS layer grows radially onto the prematurely grown CdS:Mn core prior to the formation of its well faceted surface. Transmission electron microscopy (TEM) and other characterization techniques confirmed the formation of uniform, thin (5-8 nm in diameter) CSNWs with high aspect ratio up to >150. This solvothermal method is simple, versatile and useful in a large scale production process to synthesize thin ultra-long CSNWs with and without dopants.

Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Abstract: A nanoscale sensing device from different types of nanoparticles (NPs) and nanowires (NWs) connected by molecular springs. The distance between the nanoscale colloids reversibly changes depending on conditions or analyte concentration and can be evaluated by fluorescence measurements.

Abstract: An electro-chemical sensor comprises a bismuth nano-wire array. The sensor is used to detect incipient corrosion under paint. It is particularly useful in admiralty and marine applications such as for detecting incipient metal oxidation such as rusting and for monitoring the progress of metal oxidation on ship hulls and tanks. It is also useful in the automobile industry for quantifying surface quality in preparation for painting.

Abstract: A method of synthesizing nanostructures. In one embodiment, the method includes the step of heating a reaction mixture at an elevated temperature, T, for a period of time effective to allow the growth of desired nanostructures. The reaction mixture contains an amount, P, of a carboxylate salt and an amount, L, of a fatty acid ligand, defining a molar ratio of the fatty acid ligand to the carboxylate salt, ?=L/P, and a hydrocarbon solvent. The reaction mixture is characterizable with a critical ligand protection, ?, associating with the chemical structure of the carboxylate salt such that when ?<?, the reaction mixture is in a limited ligand protection (LLP) domain, and when ?>?, the reaction mixture is in a sufficient ligand protection (SLP) domain.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.

Abstract: A photovoltaic device has nanoparticles sandwiched between a conductive substrate and a charge selective transport layer. Each of the nanoparticles has a ligand shell attached to the nanoparticle core. A first type of ligand is electron rich and attached to one hemisphere of the nanoparticle core, while a second type of ligand is electron poor and attached to an opposite hemisphere of the core. Consequently, the ligand shell induces an electric field within the nanoparticle, enhancing the photovoltaic effect. The arrangement of ligands types on different sides of the nanoparticle is obtained by a process involving ligand substitution after adhering the nanoparticles to the conductive substrate.

Abstract: A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.

Abstract: Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.

Abstract: A method for preparing III-VI2 nanoparticles and a thin film of polycrystalline light absorber layers. The method for preparing I-III-VI2 nanoparticles comprises the steps of: (a1) preparing a mixed solution by mixing each element from groups I, III and VI in the periodic table with a solvent; (a2) sonicating the mixed solution; (a3) separating the solvent from the sonicated mixed solution; and (a4) drying the product resulted from the above step (a3) to obtain nanoparticles.

Abstract: A method for preparing a chalcopyrite-type semiconductor compound which is widely used as a sunlight-absorbing material. More specifically, disclosed is a method for preparing a chalcopyrite-type compound, in which microwaves are used as heat sources in the preparation of the chalcopyrite-type compound, and the chalcopyrite-type compound can be produced in a large amount in a short reaction time using a batch or continuous reactor.

Abstract: A method of making a large area conformable shape structure comprises drawing a plurality of tubes to form a plurality of drawn tubes, and cutting the plurality of drawn tubes into cut drawn tubes of a predetermined shape. The cut drawn tubes have a first end and a second end along the longitudinal direction of the cut drawn tubes. The method further comprises conforming the first end of the cut drawn tubes into a predetermined curve to form the large area conformable shape structure, wherein the cut drawn tubes contain a material.

Abstract: A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.

Abstract: CuInS2 nanoparticles have been prepared from single source precursors via microwave irradiation. Also, CuInGaS2 alloy nanoparticles have been prepared. Microwave irradiation methods have allowed an increase in the efficiency of preparation of these materials by providing increased uniformity of heating and shorter reaction times. Nanoparticle growth has been controlled in the about 1 to 5 nm size range by variation of thiolated capping ligand concentrations as well as reaction temperatures and times. Investigation of the photophysical properties of the colloidal nanoparticles has been performed using electronic absorption and luminescence emission spectroscopy. Qualitative nanoparticles sizes have been determined from the photoluminescence (PL) data and compared to TEM images.

Abstract: The present invention relates to photovoltaic cells comprising group IV-VI semiconductor nanocrystals as photoactive components. In particular, these nanocrystals are of core-shell or core-alloyed shell configuration, each comprising a core of a first group IV-VI semiconductor material having a selected band gap energy, and either a core-overcoating shell consisting of a second group IV-VI semiconductor material or a core-overcoating alloyed shell consisting of an alloy of said first group IV-VI semiconductor material and a second group IV-VI semiconductor material, respectively.

Abstract: Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Abstract: A plurality of semiconductor nanoparticles having an elementally passivated surface are provided. These nanoparticles are capable of being suspended in water without substantial agglomeration and substantial precipitation on container surfaces for at least 30 days. The method of making the semiconductor nanoparticles includes reacting at least a first reactant and a second reactant in a solution to form the semiconductor nanoparticles in the solution. A first reactant provides a passivating element which binds to dangling bonds on a surface of the nanoparticles to passivate the surface of the nanoparticles. The nanoparticle size can be tuned by etching the nanoparticles located in the solution to a desired size.

Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.

Abstract: A partially passivating core shell particle includes a luminescent nanocrystal core, and a partially passivating semiconducting core shell on a surface of the nanocrystal. The shell allows selected analytes to alter a luminescent response of the core shell particle. A quantum dot-based sensing system includes at least one partially passivating core shell particle, a light source for irradiating the partially passivating core shell particle, and a light detector for receiving emissions from the particle, wherein emissions from the core shell particle change in response to the presence of at least one analyte.

Abstract: A transistor comprises a nanowire (22, 22?) having a source (24) and a drain (29) separated by an intrinsic or lowly doped region (26, 28). A potential barrier is formed at the interface of the intrinsic or lowly doped region (26, 28) and one of the source (24) and the drain (29). A gate electrode (32) is provided in the vicinity of the potential barrier such that the height of the potential barrier can be modulated by applying an appropriate voltage to the gate electrode (32).

Abstract: The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Abstract: A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a non-polymeric layer.

Abstract: Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

Abstract: The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.

Abstract: A nanotube-shaped titania having an aspect ratio of 6 or greater can be produced by anodizing a titanium metal or an alloy containing mainly titanium in an electrolyte solution containing a halogen atom-containing ion, such as a perchloric acid aqueous solution.

Abstract: A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

Abstract: Methods for forming colloidal metal chalcogenide nanoparticles generally include forming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals.

Abstract: The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In-P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.

Abstract: A composite photocatalyst includes a semiconducting core and a nanoscale particle disposed on a surface of the semiconducting core, wherein the nanoscale particle is an electron carrier, and wherein the photocatalyst is sensitive to visible light irradiation.

Abstract: Structures and methods for the fabrication of ceramic nanostructures. Structures include metal particles, preferably comprising copper, disposed on a ceramic substrate. The structures are heated, preferably in the presence of microwaves, to a temperature that softens the metal particles and preferably forms a pool of molten ceramic under the softened metal particle. A nano-generator is created wherein ceramic material diffuses through the molten particle and forms ceramic nanostructures on a polar site of the metal particle. The nanostructures may comprise silica, alumina, titania, or compounds or mixtures thereof.

Abstract: The present invention provides semiconductor nanoparticles which emit light at room temperature and include a sulfide or oxide containing zinc, a Group 11 element in the periodic table, and a Group 13 element in the periodic table as a main component or a sulfide or oxide containing a Group 11 element in the periodic table and a Group 13 element in the periodic table as a main component. For example, the semiconductor nanoparticles are represented by Zn(1-2x)InxAgxS (O<x?0.5).

Abstract: A material is disclosed which possesses at least two of the following characteristics: (a) is optically transparent at a wavelength in the range from about 1500 nm to about 1560 nm; (b) has a 1/n dn/dt greater than that of silicon, (c) has an extinction coefficient, k, less than 10?3. In certain preferred embodiments, the material has the following characteristics: (a) 1/n dn/dt greater than that of silicon, and (b) an extinction coefficient, k, less than 10?3 at 1550 nm. In another aspect, a material comprising semiconductor nanocrystals, wherein the semiconductor nanocrystals are capable of displaying thermo-optic effects in bulk form and being sufficiently non-absorbing at a predetermined wavelength to be optically transparent at that wavelength is disclosed. In a preferred embodiment, the predetermined wavelength is about 1550 nm. Thin film, optical filters, and devices are also disclosed.

Abstract: A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers. Nanostructures (12) of semiconductor materials car be grown on foreign substrates (10) by molecular beam epitaxy (MBE), chemical vapour deposition (CVD), metalorganic chemical vapour deposition (MOCVD) and hydride vapour phase epitaxy (HVPE). Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.

Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.

Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

Abstract: A mixing reactor for mixing efficiently streams of fluids of differing densities. In a preferred embodiment, one of the fluids is supercritical water, and the other is an aqueous salt solution. Thus, the reactor enables the production of metal oxide nanoparticles as a continuous process, without any risk of the reactor blocking due to the inefficient mixing inherent in existing reactor designs.

Abstract: Nanoparticulate composites and dispersion thereof using novel polymeric ligand compounds, in certain embodiments in conjunction with pyridinyl moieties coupling the nanoparticulate and ligand.

Abstract: Methods for forming colloidal metal chalcogenide nanoparticles generally include forming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals.

Abstract: Nanomaterials for use in optoelectronic applications, and particularly nanocomposite optical amplifiers. nanocomposite optical amplifiers (NOAs), e.g., provided on integrated optical chips, for cost-effective broadband amplification across the entire clear-window of optical fiber. It is expected that such systems could provide a 15× increase in bandwidth over existing technology, while remaining compatible with all future advances in bit-rate and channel spacing.

Abstract: Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire material. Spaces between the nanowires are filled with a slab material, the patterned array of nanowires defining a patterned array of channels in the slab material. The nanowire material is then removed from the channels.

Abstract: A thermal interface material (TIM) including a mechanically compliant matrix material which contains thermally conductive particles and thermally conductive nanofibers is provided. Such a TIM provides enhanced thermal conductivity without excessive viscosity when the nanofiber volume concentration is above a threshold value for enhanced thermal conductivity.

Abstract: A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.

Abstract: The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.

Abstract: Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application.