Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon
In a semiconductor device, an insulating interlayer is provided above a semiconductor substrate, and a plurality of first wiring layers and a plurality of second wiring layers are formed in the insulating interlayer. The first wiring layers are substantially composed of copper, and are arranged in parallel at a large pitch. The second wiring layers are substantially composed of copper, and are arranged in parallel at a small pitch. A first metal capping layer is formed on each of the first wiring layers, and a second metal capping layer is formed on each of the second wiring layers. The second metal capping layer has a smaller thickness than that of the first metal capping layer.
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1. Field of the Invention
The present invention relates to a semiconductor device which features copper wiring layers having metal capping layers formed thereon, and a method for manufacturing such a semiconductor device.
2. Description of the Related Art
In a process of production of semiconductor devices, semiconductor elements, such as transistors, resistors, capacitors and so on, are produced in a semiconductor substrate, and then a multi-layered wiring structure is formed on the semiconductor substrate. The multi-layered wiring structure includes a local multi-layered wiring section formed on the semiconductor substrate, and a global multi-layered wiring section formed on the local multi-layered wiring section.
The local multi-layered wiring section includes a plurality of insulating interlayers, a plurality of wiring pattern layers each formed on one of the insulating interlayers, a plurality of groups of via plugs each group formed in one of the insulating interlayers to establish electrical connections between opposing ones of the two wiring pattern layers. The wiring pattern layers serve as power supply lines, ground lines and signal lines.
Usually, the power supply lines and the ground lines are arranged in parallel at a given pitch in a power/ground line area defined on the insulating interlayers, and the signal lines are arranged in parallel at a given pitch in a signal line area defined on the corresponding insulating interlayers. The power supply lines and the ground lines are wider than the signal lines, and a space or pitch between two adjacent ones of the power/ground lines is larger than a space or pitch between two adjacent ones of the signal lines.
The global multi-layered wiring section is constituted in substantially the same manner as the local multi-layered wiring section, but the power/ground lines and signal lines in the global multi-layered wiring section are wider than those of the local multi-layered wiring section.
With the advance of miniaturization and integration of semiconductor devices, the wiring pattern layers become smaller, and thus the signal lines become narrower, resulting in delay of signal propagation in the narrowed wiring lines, due to a parasitic resistance of the signal lines themselves and a parasitic capacitance involved in the signal lines.
In order to improve the delay of the signal propagation, it has been proposed that copper be used for the wiring pattern layers as a substitute for aluminum, which is conventionally used for the wiring pattern layers. Also, the use of copper is advantageous in that the copper wiring pattern layers exhibit a superior anti-electromigration (EM) characteristic in comparison with that of the aluminum wiring pattern layers.
Nevertheless, when the miniaturization and integration of semiconductor devices is further advanced, the copper wiring pattern layers become increasingly smaller, so that a non-neglectable electromigration may occur in the copper wiring pattern layers. Also, as a problem peculiar to fine copper wiring layers, there is a stress induced voiding (SIV) problem, in which voids are produced in roots of the via plugs formed in the insulating interlayers, due to thermal stresses to which the copper wiring layers are subjected. Namely, in the copper wiring layers, it is necessary to take an anti-SIV characteristic into consideration.
In order to improve both the anti-electromigration characteristic and the anti-SIV characteristic in the copper wiring layers, it has been proposed that surfaces of the copper wiring layers are coated with metal capping layers which are composed of CoWP, CoSnP or CoP, as disclosed in, for example, JP-2003-505882-A. However, when the metal capping layers are formed on the fine copper wiring layers, featuring the minimum line width, included in the local multi-layered wiring section, the formation of the metal capping layers on the fine copper wiring layers is liable to be exceeded, resulting in occurrence of short circuits between the fine copper wiring layers, as stated in detail hereinafter.
SUMMARY OF THE INVENTIONTherefore, an object of the present invention is to provide a semiconductor device which is constituted such that not only can both an anti-electromigration characteristic and an anti-SIV characteristic be considerably improved, but also it is possible to prevent occurrence of short circuits between fine copper wiring layers.
Another object of the present invention is to provide a method for manufacturing such a semiconductor device.
In accordance with a first aspect of the present invention, there is provided a semiconductor device which includes a first wiring layer which is substantially composed of copper, a second wiring layer which is substantially composed of copper, a first metal capping layer formed on the first wiring layer, and a second metal capping layer formed on the second wiring layer. A thickness of the first metal capping layer is thicker than that of the second metal copping layer.
Each of the first and second metal capping layers may be composed of one selected from the group consisting of CoWP alloy, CoP alloy layer, CoWB alloy and CoSnP alloy.
The semiconductor device may further comprises a multi-layered wiring structure. In this case, the first and second wiring layers may be formed in an insulating interlayer included in the multi-layered wiring structure.
The insulating interlayer may include a first barrier layer containing tantalum nitride as a main component and formed between the first wiring layer and the insulating interlayer, and a second barrier layer containing tantalum as a main component and formed between the second wiring layer and the insulating interlayer. A nitrogen density of the first barrier layer being larger than that of the second barrier layer.
The first wiring layer may include a plurality of crystallized copper grains, crystal faces (200) of which appear on a surface of the first wiring layer, and the first metal capping layer may be formed on the surface of the first wiring layer which is featured by the crystal faces (200). Also, the second wiring layer may include a plurality of second crystallized copper grains, crystal faces (111) of which appear on a surface of the second wiring layers, and the second capping layer may be formed on the surface of the second wiring layer which is featured by the crystal faces (111).
The first wiring layer may include a plurality of crystallized copper grains, crystal faces (200) of which appear on a surface of the first wiring layer, and a plurality of crystallized copper regions each having a plurality of crystallized grains, crystal faces (111) of which appear on a surface of the first wiring layer. In this case, a metal capping region is formed on each of the crystallized copper regions which is featured by the crystal faces (111), with the metal capping regions forming a part of the first metal capping layer. An thickness of each of the metal capping layers is substantially equivalent to that of the second metal capping layer.
The second wiring layer may include a plurality of second crystallized copper grains, crystal faces (111) of which appear on a surface of the second wiring layers, and the second capping layer may be formed on the surface of the second wiring layer which is featured by the crystal faces (111).
The formation of the first metal capping layer on the first wiring layer may be partially carried out, and a copper silicide layer may be formed on the remaining area on the first wiring layer from which the formation of the first metal capping layer is excluded. In this case, the second metal capping layer is also formed as a copper silicide layer.
In accordance with a second aspect of the present invention, there is provided a semiconductor device which comprises a plurality of at least two first wiring layers which are substantially composed of copper, and which are arranged so as to be apart from each other at a first pitch, a plurality of at least two second wiring layers which are substantially composed of copper, and which are arranged so as to be apart from each other at a second pitch narrower than the first pitch, a plurality of first metal capping layers, each of which is formed on one of the first wiring layers, and a plurality of second metal capping layers, each of which is formed on one of the second wiring layers. A thickness of the first metal capping layers is thicker than that of the second metal copping layer.
In the second aspect of the present invention, the semiconductor device may further comprises a multi-layered wiring structure, and the first wiring layers and the second wiring layers may be formed in an insulating interlayer included in the multi-layered wiring structure. Optionally, the first wiring layers may be formed in an insulating interlayer included in the multi-layered wiring structure, the second wiring layers may be formed in another insulating interlayer included in the multi-layered wiring structure.
In accordance with a third aspect of the present invention, there is provided a method for manufacturing a semiconductor device, which comprises: a first step of forming a first wiring layer and a second wiring layer which are substantially composed of copper, a width of the first wiring layer is wider than that of the second wiring layer; and a second step of forming a first metal capping layer and a second capping layer on the respective first and second wiring layers, the formation of the second metal capping layer is carried out at a smaller time than a time at which the formation of the first metal capping layer is carried out.
The first step may be executed such that the formation of the second metal capping layer is started later after a starting of the formation of the first metal capping layer, and such that both the formations of the first and second metal capping layers end at substantially a same time.
The first step may include a step of forming a first copper oxide layer and a second copper oxide layer on the respective first and second wiring layers. Also, the second step may include: a step of immersing the semiconductor device in a plating solution containing a copper oxide removal agent for removing the first and second copper oxide layers from the first and second wiring layers; a step of removing the first and second copper oxide layers with the copper oxide removal agent; and a step of carrying out both the formations of the first and second metal capping layers by the plating solution after the removals of the first and second copper oxide layers. In this case, a thickness of the first copper oxide layer is thinner than that of the second copper oxide layer.
On the other hand, the first step may include: a step of forming an insulating interlayer; a step of forming a first trench and a second trench in the insulating interlayer, the second trench being narrower than the first trench; a step of forming a first barrier layer containing tantalum nitride as a main component and a second barrier layer containing tantalum as a main component in the respective first and second trenches; a step of carrying out both the formations of the first and second wiring layers on the respective first and second barrier layers.
In accordance with a fourth aspect of the present invention, there is provided a method for manufacturing a semiconductor device, which comprises: a first step of forming a first wiring layer and a second wiring layer which are substantially composed of copper, a width of the first wiring layer is wider than that of the second wiring layer; a second step of forming a metal capping layer a partial area of a surface of the first wiring layer; and a third step of forming a copper silicide layer on a remaining area of the surface of the first wiring layer.
In the fourth aspect of the present invention, the third step may include a step of forming a copper silicide layer on a surface of the second wiring layer.
Also, in the fourth aspect of the present invention, the first wiring layer may include a plurality of crystallized copper grains, crystal faces (200) of which appear on the partial area of the surface of the first wiring layer, and a plurality of crystallized copper regions each having a plurality of crystallized grains, crystal faces (111) of which appear on the remaining area of the surface of the first wiring layer.
The above object and other objects will be more clearly understood from the description set forth below, with reference to the accompanying drawings, wherein:
Before a description of the preferred embodiments of the present invention, for better understanding of the present invention, a prior art method for manufacturing a semiconductor device will be now explained with reference to
First, referring to
After the formation of the semiconductor elements in the semiconductor substrate 110 is completed, an insulating layer 112 (i.e., an insulating interlayer L) is formed as a silicon dioxide layer on the semiconductor substrate 110 by a suitable chemical vapor deposition (CVD) process, and a plurality of wide trenches 112A and a plurality of narrow trenches 112B are formed in the insulating interlayer L, using a photolithography and etching process. The wide trenches 112A are arranged at a given pitch, and the narrow trenches 112B are arranged at a smaller pitch than that of the wide trenches 113A.
Next, referring to
Next, referring to
Note, the TaN barrier layers 114 prevent diffusion of copper atoms (Cu) from the Cu layer 116 into the insulating interlayer 12.
After the copper electroplating process is completed, both the TaN barrier layer 114 and the Cu layer 116 are subjected to an annealing process for crystallization at a temperature of at least 150° C. over a period of 30 min.
Next, referring to
Note, each of the wide wiring layers 116A serves as either a power supply line or a ground line, and each of the narrow Cu wiring layers 116B serves as a signal line.
Next, referring to
In this prior art method as illustrated in
With reference to
First, referring to
After the production of the semiconductor elements in the semiconductor substrate 10 is completed, an insulating layer 12 (i.e., an insulating interlayer L1) is formed as a silicon dioxide layer on the semiconductor substrate 10 by a suitable CVD process, and a plurality of wide trenches 12A and a plurality of narrow trenches 12B are formed in the insulating interlayer 12, using a photolithography and etching process. The wide trenches 12A are arranged at a given pitch, and the narrow trenches 12B are arranged at a smaller pitch than that of the wide trenches 12A.
Next, referring to
In particular, in the sputtering process, nitrogen (N) gas is used as an ambient gas, and tantalum (Ta) is used as a target metal. During the sputtering process, the nitrogen gas is ionized to thereby produce nitrogen ions (N+). Usually, a negative bias voltage is applied to the semiconductor substrate 10 to thereby electrically attract the nitrogen ions N+ to the semiconductor substrate 10, as stated with reference to
However, in this sputtering process, no negative bias voltage is applied to the semiconductor substrate 10. Thus, the nitrogen ions (N+) can relatively easily penetrate into the wide trenches 14A, but there is a tendency to suppress penetration of the nitrogen ions (N+) into the narrow trenches 14B. As a result, the main component of the metal barrier layer 14A in the wide trenches 12A is tantalum nitride (TaN), and the major part of the metal barrier layer 14B in the narrow trenches 12B is tantalum (Ta).
Also, the metal barrier layer 14A is formed as a semi-amorphous layer in which TaN is amorphous, and Ta is crystallized, and crystal faces (111) of the crystallized Ta appear on a plane parallel to the surface of the semiconductor substrate 10. On the other hand, the metal barrier layer 14B is formed as a crystallized layer in which crystal faces (111) of the crystallized Ta barrier layer 14B appear on a plane parallel to the surface of the semiconductor substrate 10.
Next, referring to
At this time, although the metal (TaN) barrier layer 14A is formed as the semi-amorphous layer, the Cu layer 16A1 can be formed as an amorphous layer by suitably regulating the formation of the Cu seed layer (not shown). On the other hand, the Cu layer 16B1 is formed as a crystallized layer, due to the crystallization of the metal (Ta) barrier layer 14B. Note, similar to the crystallized Ta barrier layer 14B, crystal faces (111) of the crystallized Cu layer 16B1 appear on the plane parallel to the surface of the semiconductor substrate 10.
The first copper electroplating process is continued until the narrow trenches 12B are completely filled with the Cu layer 16B1, with the wide trenches 12A being partially filled with the Cu layer 16A1. Also, both the Cu layers 16A1 and 16B1 contain a relatively large amount of impurities, included in an electrolyte solution used in the first electroplating process, due to the slow growth rate of the both the Cu layers 16A1 and 16B1.
Note, the metal barrier (TaN, Ta) layers 14A and 14B prevent diffusion of copper atoms (Cu) from the Cu layers 16A1 and 16B1 into the insulating interlayer 12.
Next, referring to
Note, in reality, the first and second copper electroplating processes can be carried out in one process by switching a current value from the small current value into the large current value.
Similar to the Cu layer 16A1, the Cu layer 16A2 is formed as an amorphous layer. Also, similar to the Cu layer 16B1, the Cu layer 16B2 is formed as a crystallized layer, and crystal faces (111) of the crystallized Cu layer 16B2 appear on the plane parallel to the surface of the semiconductor substrate 10. Both the Cu layers 16A2 and 16B2 contain a relatively small amount of impurities included in the electrolyte solution due to the rapid growth rate of both the Cu layers 16A2 and 16B2.
Note, in the first and second copper electroplating processes of
After the second copper electroplating process is completed, the TaN barrier layer 14A and both the Cu layers 16A1 and 16A2 are subjected to an annealing process for crystallization at a temperature of at least 150° C. (e.g. 350° C.) over a period of 30 min.
In this annealing process, the amorphous Cu layers 16A1 and 16A2, with which the wide trenches 14A are filled, are crystallized so as to have a large grain size on the order of several microns (μm) because the Cu layer 16A2 contains the relatively small amount of impurities due to the rapid growth rate of the Cu layer 16A2. Also, when the crystallization of the amorphous Cu layers 16A1 and 16A2 is carried out by the annealing process, the crystallized copper layer has a tendency for the crystal faces (200) of the crystallized Cu layers 16A1 and 16A2 to appear on the plane parallel to the surface of the semiconductor substrate 10.
On the other hand, the crystallized Cu layer 16B1, with which the narrow trenches 14B is filled, features a considerably fine grain size on the order of several tens of nanometers (nm), because the Cu layer 16B1 contains the relatively large amount of impurities due to the slow growth rate of the Cu layer 16B1. Note, as stated above, the crystal faces (111) of the crystallized Cu layer 16B1 appear on the plane parallel to the surface of the semiconductor substrate 10.
Next, referring to
Note, in
Next, referring to
In either event, the cupric oxide (CuO) layers 18A features a thickness which is smaller than that of the cupric oxide (CuO) layers 18B, in that the wide Cu wiring layers 16A have a large grain size on the order of several microns (μm), whereas the narrow Cu wiring layers 16B have a fine grain size on the order of several tens of nanometers (nm).
In particular, the wide Cu wiring layers 16A exhibit a low grain boundary density due to the large grain size thereof, whereas the narrow Cu wiring layers 16B exhibit a high grain boundary density due to the fine grain size thereof. Thus, during the oxidization process, oxygen can more deeply penetrate into the narrow Cu wiring layers 16B due to the high grain boundary density thereof, in comparison with the case of the wide Cu wiring layers 16A. As a result, the thickness of the cupric oxide (CuO) layers 18A is smaller than that of the cupric oxide (CuO) layers 18B.
After the oxidization process is completed, each of the cupric oxide (CuO) layers 18A and 18B is reformed as a cuprite oxide (Cu2O) layer by treating the cupric oxide (CuO) layers 18A and 18B with an aqueous washing solution exhibiting a redox (oxidization-reduction) potential falling within a range from 0 to 0.2 (V vs NHE) and a pH falling within a range from 7 to 10.
Note, as stated hereinafter, the reformed cuprite oxide (Cu2O) layers 18A and 18B are chemically removed later, and it is possible to more easily carry out the removal of the cuprite oxide (Cu2O) layers 18A and 18B in comparison with the removal of the cupric oxide (CuO) layers.
After the reformation of the cupric oxide (CuO) layers 18A and 18B is completed, an anti-oxidizing layer (not shown) may be formed over the surfaces of the wide Cu wiring layers 16A and the narrow Cu wiring layer 16B, if necessary. For example, it is possible to use a benzotriazole (BTA) layer as the anti-oxidizing layer, which is obtained by treating the wide Cu wiring layers 16A and the narrow Cu wiring layers 16B with a BTA solution.
In either event, the semiconductor substrate 10 having the wide Cu wiring layers 16A and the narrow Cu wiring layers 16B is immersed in a CoWP electroplating solution containing a Cu2O removal agent for removing the cuprite oxide (Cu2O) layer 18A and 18B from the wide Cu wiring layers 16A and the narrow Cu wiring layers 16B. At this time, if the semiconductor substrate 10 is provided with the aforesaid anti-oxidizing layer, the immersion of the semiconductor substrate 10 into the CoWP electroplating solution containing the Cu2O removal agent is carried out after the anti-oxidizing layer is eliminated from the surfaces of the wide Cu wiring layers 16A and the narrow Cu wiring layers 16B.
Note, the CoWP electroplating solution may be composed of cobalt sulfate (CoSO4), boric acid (H3BO3), sodium hydrogen phosphate (H2PO2), sodium tungstate (Na2WO4) and so on, and sodium citrate (C6H5Na3O7.2H2O) is added to the CoWP electroplating solution as the aforesaid Cu2O removal agent.
Next, referring to
When the Cu2O layers 18A of
Next, referring to
Next, referring to
Note, a difference in thickness between the metal capping layers 20A and the metal capping layers 20B is at least 100 Å, and should be at most 300 Å so that a flatness of the insulating interlayer 12 cannot be subjected to damages.
Next, referring to
Next, referring to
Then, a copper (Cu) via plug 26A is formed in each of the via holes 26A (see:
Next, referring to
Thus, it is possible to suppress an excess formation of the metal capping layers 34B on the narrow Cu wiring layers 32B, resulting in prevention of occurrence of a short circuit between the narrow Cu wiring layers 32B.
Note, each of the Cu via plugs 26A establishes an electrical connection between the corresponding wide Cu wiring layer 32A and the corresponding wide Cu wiring layer 16A, and each of the Cu via plugs 26B establishes an electrical connection between the corresponding narrow Cu wiring layer 32B and the corresponding narrow Cu wiring layer 16B.
Next, referring to
Further, an insulating layer 42 of the insulating interlayer L3 is formed as a silicon dioxide layer on the insulating layer 36 by using a CVD process, and includes metal (TaN, Ta) barrier layers 44A and 44B, wide and narrow Cu wiring layers 46A and 46B, and CoWP capping layers 48A and 48B, which correspond to the respective metal (TaN, Ta) barrier layers 14A and 14B, wide and narrow Cu wiring layers 16A and 16B, and metal (CoWP) capping layers 20A and 20B of the insulating interlayer L1, and which are formed in the same manner as explained with reference to
Thus, similar to case of the insulating interlayer L2, it is possible to suppress an excess formation of the metal capping layers 48B on the narrow Cu wiring layers 36B, resulting in prevention of occurrence of a short circuit between the narrow Cu wiring layers 36B.
Note, each of the Cu via plugs 40A establishes an electrical connection between the corresponding wide Cu wiring layer 46A and the corresponding wide Cu wiring layer 32A, and each of the Cu via plugs 40B establishes an electrical connection between the corresponding narrow Cu wiring layer 46B and the corresponding narrow Cu wiring layer 32B.
In
Next, referring to
Further, an insulating layer 56 is formed as a silicon dioxide layer over the insulating layer 50 having the metal barrier layers 52A and 52B and the Cu via plugs 54A and 54B, by using a CVD process. Both the insulating layers 50 and 56 form an insulating interlayer L4. Provided in the insulating interlayer L4 are metal (TaN, Ta) barrier layers 58A and 58B, wide and narrow Cu wiring layers 60A and 60B, and CoWP capping layers 62A and 62B which are formed in the conventional manner as explained with reference to
As shown in
Note, each of the Cu via plugs 54A establishes an electrical connection between the corresponding wide Cu wiring layer 60A and the corresponding wide Cu wiring layer 46A, and each of the Cu via plugs 54B establishes an electrical connection between the corresponding narrow Cu wiring layer 60B and the corresponding narrow Cu wiring layer 46B.
Next, referring to
Further, an insulating layer 70 is formed as a silicon dioxide layer on the insulating layer 64 having the metal barrier layers 66A and 66B and the Cu via plugs 68A and 68B, by using a CVD process. Formed in the insulating layer 70 of the insulating interlayer L5 are metal (TaN, Ta) barrier layers 72A and 72B, wide and narrow Cu wiring layers 74A and 74B, and CoWP capping layers 76A and 76B, which correspond to the respective metal (TaN, Ta) barrier layers 58A and 58B, wide and narrow Cu wiring layers 60A and 60B, and metal (CoWP) capping layers 62A and 62B of the insulating interlayer L4, and which are formed in the insulating layer 70 in the conventional manner as explained with reference to
Note, each of the Cu via plugs 68A establishes an electrical connection between the corresponding wide Cu wiring layer 74A and the corresponding wide Cu wiring layer 60A, and each of the Cu via plugs 68B establishes an electrical connection between the corresponding narrow Cu wiring layer 74B and the corresponding narrow Cu wiring layer 60B.
In
In short, according to the present invention, not only can both the anti-electromigration characteristic and the anti-SIV characteristic be considerably improved due to the formation of the respective metal capping layers 20A, 34A, 48A, 62A, 76A, 20B, 34A, 48A, 62A and 76A, but also it is possible to prevent the occurrence of short circuits between the narrow Cu wiring layers 16B, 32B and 46B featuring the minimum line width, by suppressing the excess formation of the metal capping layers 20B, 34B and 48B the narrow Cu wiring layers 16B, 32B and 46B.
With reference to
As stated with reference to
Referring to
Similar to the aforesaid first embodiment, when the amorphous copper (Cu) of the semi-amorphous Cu layer (16A1 and 16A2) are crystallized by the annealing process, the crystallized copper (Cu) grains have a large grain size on the order of several microns (μm), and the crystal faces (200) of the crystallized Cu appear on the plane parallel to the surface of the semiconductor substrate 10.
Next, referring to
Note, in
Next, referring to
Next, referring to
Similar to the aforesaid first embodiment, after the oxidization process is completed, each of the cupric oxide (CuO) layers 18A, 181A and 18B is reformed as a cuprite oxide (Cu2O) by treating the cupric oxide (CuO) layers 18A, 181A and 18B with the aqueous washing solution exhibiting the redox (oxidization-reduction) potential falling within the range from 0 to 0.2 (V vs NHE) and the pH falling within the range from 7 to 10.
Similar to the aforesaid first embodiment, after the reformation of the cupric oxide (CuO) layers 18A, 181A and 18B is completed, the semiconductor substrate 10 having the wide Cu wiring layers 16A and the narrow Cu wiring layers 16B is immersed in the CoWP electroplating solution containing the Cu2O removal agent for removing the cuprite oxide (Cu2O) layer 18A, 181A and 18B from the wide and narrow Cu wiring layers 16A and 16B.
Next, referring to
Similar to the aforesaid first embodiment, when the Cu2O layers 18A of
Next, referring to
Next, referring to
Next, referring to
In
As stated above, in the second embodiment, although each of the wide Cu wiring layers 16A, 32A and 46A includes the Cu layer region (161A, 321A, 461A) having the fine Cu grains, the Cu layer region (161A, 321A, 461A) is coated and capped with the metal (CoWP) capping region (201A, 341A, 481A). Thus, similar to the aforesaid first embodiment, in the second embodiment, it is possible to improve both the anti-electromigration characteristic and the anti-SIV characteristic without the occurrence of short circuits between the narrow Cu wiring layers 16B, 32B and 46B featuring the minimum line width.
With reference to
Similar to the aforesaid second embodiment, in this third embodiment, both the Cu layers 16A1 and 16A2 are formed as a semi-amorphous copper (Cu) layer in the wide trenches 12A, and the third embodiment is also directed to how the semi-amorphous copper (Cu) layer (16A1 and 16A2) is processed.
First, referring to
Next, referring to
It is possible to carry out the formation of the Cu silicide region 202A and the Cu silicide layers 20B′ by utilizing a processing chamber of a CVD apparatus. Namely, in the processing chamber of the CVD apparatus, while the Cu region 161A and the narrow Cu wiring layers 16B are heated to a given high temperature, a semiconductor gas, such as a silane gas (SiH4), a disilane gas (Si2H6), trisilane gas (Si3H8) or the like, is blown over the Cu regions 161A and the narrow Cu wiring layers 16B, resulting in the formation of the Cu silicide region 202A and the Cu silicide layer 20B′. The Cu silicide regions 202A has substantially the same thickness as that of the Cu silicide layers 20B′, and this thickness is smaller than the CoWP capping layers 20A.
Next, referring to
In
In the aforesaid first, second and third embodiments, although each of the metal capping layers 20A, 34A, 48A, 62A, 76A, 20B, 34A, 48A, 62A and 76A is composed of CoWP alloy, it may be formed as another alloy layer, such as a CoP alloy layer, a CoWB alloy layer, a CoSnP alloy layer or the like.
Also, in the aforesaid first, second and third embodiments, although the insulating interlayers L2, L3, L4 and L5 are formed by using a single-damascene process, it is possible to use a dual-damascene process for the formation of the insulating interlayers L2, L3, L4 and L5.
Finally, it will be understood by those skilled in the art that the foregoing description is of preferred embodiments of the device and the method, and that various changes and modifications may be made to the present invention without departing from the spirit and scope thereof.
Claims
1. A method for manufacturing a semiconductor device, comprising:
- a first step of forming a first wiring layer and a second wiring layer which are substantially composed of copper, a width of said first wiring layer is wider than that of said second wiring layer; and
- a second step of forming a first metal capping layer and a second capping layer on said respective first and second wiring layers, the formation of said second metal capping layer is carried out at a smaller time than a time at which the formation of said first metal capping layer is carried out,
- wherein said second step is executed such that the formation of said second metal capping layer is started later after a starting of the formation of said first metal capping layer, and such that both the formations of said first and second metal capping layers end at substantially a same time,
- wherein said first step includes a step of forming a first copper oxide layer and a second copper oxide layer on said respective first and second wiring layers, and
- wherein said second step includes:
- a step of immersing the semiconductor device in a plating solution containing a copper oxide removal agent for removing said first and second copper oxide layers from said first and second wiring layers;
- a step of removing said first and second copper oxide layers with said copper oxide removal agent; and
- a step of carrying out both the formations of said first and second metal capping layers by said plating solution after the removals of said first and second copper oxide layers.
2. The method as set forth in claim 1, wherein a thickness of said first copper oxide layer is thinner than that of said second copper oxide layer.
3. The method as set forth in claim 1, wherein said first step includes:
- a step of forming an insulating interlayer;
- a step of forming a first trench and a second trench in said insulating interlayer, said second trench being narrower than said first trench;
- a step of forming a first barrier layer containing tantalum nitride as a main component and a second barrier layer containing tantalum as a main component in said respective first and second trenches;
- a step of carrying out both the formations of said first and second wiring layers on said respective first and second barrier layers.
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Type: Grant
Filed: Dec 1, 2008
Date of Patent: Jun 22, 2010
Patent Publication Number: 20090081870
Assignee: NEC Electronics Corporation (Kanagawa)
Inventors: Toshiyuki Takewaki (Kawasaki), Kazuyoshi Ueno (Kawasaki)
Primary Examiner: Nitin Parekh
Attorney: Young & Thompson
Application Number: 12/325,670
International Classification: H01L 21/4763 (20060101); H01L 21/44 (20060101);