Abstract: Efficiency of inspection work for inspecting all the plurality of modules of a substrate processing system is improved and the management of information obtained by inspecting the modules is facilitated. A substrate processing system 50 provided with a plurality of modules for processing a substrate and capable of carrying out the measurement of the plurality of modules for inspection includes an inspection substrate WS provided with a plurality of measuring means 30 to 34 for carrying out a plurality of different kinds of measurement and a recording means 42 for recording measured data provided by the measuring means, and a control means 36 that executes control operations to subject the inspection substrate WS to predetermined processes in the plurality of modules. The control means 36 obtains a plurality of different kinds of measured data recorded in the recording means from the inspection substrate WS processed by the predetermined processes by the plurality of modules through data communication.

Abstract: A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

Abstract: A method of fabricating a light emitting device (LED) includes measuring emission characteristics for a plurality of LED chips configured to emit light of a first color. The plurality of LED chips are sorted based on the measured emission characteristics to provide a plurality of groups respectively including ones of the plurality of LED chips having similar measured emission characteristics. A respective light conversion material is selected for each of the plurality of groups based on the measured emission characteristics of the ones of the plurality of LED chips included therein and a desired color point. The selected light conversion material is configured to absorb at least some of the light of the first color and responsively emit light of a second color.

Abstract: In the present invention, when trouble occurs and the operation of a substrate processing apparatus is stopped, substrate information containing positions and processing states of the substrates located in the apparatus at that time is stored, and the power supply of the apparatus is then turned off. When the apparatus is restarted, the substrates located in the apparatus are collected into a substrate housing unit, and each of the substrates in the substrate housing unit is then sequentially transferred to a plurality of processing units following the same transfer recipe as that before occurrence of trouble, and substrate processing is not performed in a processing unit in which processing has already been completed, whereas substrate processing is performed in a processing unit in which processing has not been performed yet, based on the substrate information.

Abstract: A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.

Abstract: A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller connected to the valves, the pressure transducer and the input device. The controller is programmed to receive the desired mass from the input device, close the second valve and open the first valve, receive chamber pressure measurements from the pressure transducer, and close the inlet valve when pressure within the chamber reaches a predetermined level. The controller is then programmed to wait a predetermined waiting period to allow the gas inside the chamber to approach a state of equilibrium, then open the outlet valve at time=t0, and close the outlet valve at time=t* when the mass of gas discharged equals the desired mass.

Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.

Abstract: A coating apparatus and an operating method thereof that prevent damage to the nozzle of a spinless coater from impurities on a substrate during resin coating of the substrate, and impurities remaining on a stage at the bottom of the substrate. The coating apparatus comprises a stage, a nozzle, a nozzle cleaner, and a stage cleaner. A substrate is placed upon the stage. The nozzle discharges resin on the substrate to perform coating. The nozzle cleaner cleans the nozzle. The stage cleaner cleans the stage. The operating method includes removing a coated first substrate from atop a stage, cleaning the stage using a stage cleaner, introducing a second substrate to be coated onto the cleaned stage, and discharging resin through a nozzle onto the second substrate and coating the second substrate.

Abstract: Provided is a method and a substrate processing apparatus for fabricating a semiconductor device by forming a film at a relatively high rate without etching an N+ substrate. In the method, a silicon substrate is loaded into a processing chamber in a first step. In a second step, at least a first silane-based gas and a first etching gas is supplied to the processing chamber while heating the semiconductor substrate. In a third step, at least a second silane-based gas and a second etching gas is supplied to the processing chamber while heating the semiconductor substrate.

Abstract: A method and an apparatus (10) for making thin layers from particles, wherein the particles are deposited on a carrier fluid flowing by gravity along a ramp (12) leading to a dam (18). The particles are held back at the bottom of the ramp (12), thereby causing the particles to be piled up one against the other in a monolayer configuration.

Abstract: The apparatus and method use an optical feedback system to align a brush assembly with a stent strut. Once alignment is achieved, a coating is dispensed onto the stent strut via the brush assembly and the brush assembly is moved along the stent strut to coat the stent strut.

Abstract: The invention relates to an operating method for an atomiser (1) for the coating of structural components, particularly of vehicle body parts, with the following steps: Application of a spray jet of a coating agent through the atomiser (1); discharge of a first guide air flow (11) for the formation of a spray jet; determination of at least one application parameter (?, ?, T, BC/CC, Qvarnish, n, U,) which reproduces a property (?, ?, T, BC/CC) of the applied coating agent or an operating variable (Qvarnish, n, U) of the atomiser (1) as well as influencing of the first guide air flow (11) as a factor of the application parameter (?, ?, T, BC/CC, Qvarnish, n, U,). Within the framework of the invention, there is the alternative option that fluctuations of the application parameters and, based thereon, variations of the spray jet width are taken into account by means of an adaptation of the path spacing (d) between the adjacent coating agent paths for the purpose of keeping the path overlapping constant.

Abstract: A thin film deposition apparatus and a method of maintaining the same are disclosed. In one embodiment, a thin film deposition apparatus includes: a chamber including a removable chamber cover; one or more reactors housed in the chamber; a chamber cover lifting device connected to the chamber cover. The chamber cover lifting device is configured to move the chamber cover vertically between a lower position and an upper position. The apparatus further includes a level sensing device configured to detect whether the chamber cover is level, and a level maintaining device configured to adjust the chamber cover if the chamber cover is not level. This configuration maintains the chamber cover to be level as a condition for further vertical movement of the chamber cover.

Abstract: A vacuum pumping system comprises a primary foreline for receiving a gas stream from an outlet of a chamber, a first vacuum pump for evacuating the chamber, a second vacuum pump for evacuating the chamber, a first secondary foreline for conveying gas from the primary foreline to the first vacuum pump, a second secondary foreline for conveying gas from the primary foreline to the second vacuum pump, and valve means for selectively connecting a chosen one of the first and second secondary forelines to the primary foreline. The condition of the vacuum pumps is monitored during use. When both vacuum pumps are operating normally, the valve means is controlled to divert a first reactant-rich gas from the primary foreline into the first secondary foreline, and to divert a second reactant-rich gas from the primary foreline to the second secondary foreline, thereby inhibiting mixing of the first and second reactants within the vacuum pumps.

Abstract: A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

Abstract: An apparatus and method for processing elongated sheet material through a plurality of processing stations including a cooling station for lowering the temperature of the sheet material. The cooling station includes a plurality of individually controllable cooling zones each for controlling a portion of the transverse width of the sheet material during passage through the cooling zone. The cooling zones each include a plurality of cooling fluid directing spray nozzles and a sensor for sensing the temperature of the portion of the sheet material onto which cooling fluid has been directed by the respective cooling zone. A controller responsive to the temperature sensed at each cooling zone is operable for independently controlling the flow of cooling fluid to the fluid spray nozzles of each cooling zone based upon a preset temperature setting of the controller.

Abstract: Fluid dispensing apparatus uses positive displacement of the fluid for accurate metering of the quantity of liquid applied to a surface. Positive displacement includes a metering volume that is filled and emptied so that each cycle corresponds to an accurate volume of material dispensed independent of viscosity. In one embodiment, a positive displacement pump is used with a variable speed air motor. The air motor drives the pump. A variable output air regulator supplies air pressure to run the air motor based on a position signal. A profile may be used to relate position with motor speed and to control quantity to be dispensed.

Abstract: A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed.

Abstract: A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.

Abstract: A coating solution supply apparatus of the present invention has a closed-type coating solution supply source which stores the coating solution therein; a supply pipe for supplying the coating solution from the coating solution supply source to the coating nozzle; and a pump which is provided along the supply pipe and pressure-feeds the coating solution to the coating nozzle, wherein an inside of the coating solution supply source is pressurized to a predetermined pressure by supply of an inert gas to prevent the inside of the coating solution supply source from being brought to a negative pressure even when the pump is operated to pressure-feed the coating solution to the coating nozzle.

Abstract: A gas injection system (10) is provided for a processing reactor and a method is provided for reducing transport of particulate material onto a substrate (12) during process gas start-up. The system (10) includes a two-way valve (40) having an inlet (42) connected to a mass flow controller (30), and first and second outlets (44, 46). The system (10) includes a principle gas feed line (50) connecting the first outlet (44) of the valve (40) to an inject plate (24) within a vacuum chamber (20) at a position above a substrate (12), and a start-up line (60) connecting the second outlet (46) to an orifice (62) in the chamber (20) at a position not above the substrate (12). Alternatively, the system includes a valve having an inlet connected to the mass flow controller, and a first outlet. In the alternative system, a first gas feed line connects the first outlet of the valve to the inject plate (24), and an acoustical dampening device is provided within the first gas feed line.

Abstract: A gas supplying system includes a processing gas supply pipe for supplying a processing gas from a gas cylinder 210 into a processing apparatus and a nonreactive gas supply source 230 for supplying a nonreactive gas into the gas supply pipe. While the system is in operation, the gas supply pipe is charged with the nonreactive gas and a control unit is in a standby state. If a processing gas use start signal is received from the processing apparatus, the system exhausts the nonreactive gas from the gas supply pipe to create a vacuum therein; charges the gas supply pipe with the processing gas; and starts a supply of the processing gas from the processing gas supply source. If a processing gas use finish signal is received from the processing apparatus, the system stops the supply of the processing gas from the processing gas supply source; exhausts the processing gas from the gas supply pipe to create a vacuum therein; and charges the gas supply pipe with the nonreactive gas.

Abstract: The invention relates to a method for producing layers on work pieces (30) in which at least one component for producing the layer is metered, wherein this component is located in liquid phase during the metering and is transformed at least partially into a different aggregate state in a subsequent processing step.

Abstract: Leakage of an atmosphere of a solvent vapor used by a smoothing process for smoothing the surface of a resist pattern outside from a smoothing unit is prevented to facilitate incorporating the smoothing unit into a coating and developing system. A substrate processing system has a coating and developing block 20, a smoothing block 50, an airflow producing unit 60 for producing down airflow that flows down from above the coating and developing block 20 and the smoothing block 50, and a main controller 100 for controlling the airflow producing unit 60.

Abstract: A control unit of a substrate processing apparatus controls a process to be performed in a chamber. The process includes a step of performing a preceding first process; a step of performing a subsequent second process after performing the first process; a step of determining whether to perform an inter-process conditioning, for arranging the environment in the chamber, during a period between the end of the first process and the start of the second process, based on information on the first process and information on the second process; and a step of performing the inter-process conditioning prior to the second process when it is determined in the determining step that the inter-process conditioning is to be performed.

Abstract: A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. In an exemplary embodiment, the deposition chamber further comprises a substrate device, being provided for the thermally cracked precursor to deposit thereon to form an organic film. As the plasma chamber is separated from the deposition chamber in the aforesaid apparatus, a low-temperature film deposition process can be used for forming organic films while preventing the substrate device from being bombarded directly by plasma. In addition, as there is a flow guiding device arranged at the outlet of the plasma chamber, the thermally cracked precursor is guided or disturbed and thus is prevented from overly concentrating at the outlet or the center of the substrate device.

Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

Abstract: An article to be powder painted is suspended from an overhead conveyor and moved continuously along a horizontal transport path through at least one first and at least one second painting stations and respective first and second baking stations. Downstream of the second painting station(s) the article is brushed or rolled to impart texture to the second coat of paint, which differs in some respect from the first coat applied in the first station. The article is suspended so it can rotate about a vertical axis and is rotated through 90° between succeeding painting stations.

Abstract: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300).

Abstract: A drain port and an exhaust port arranged at the bottom of a cup surrounding a substrate holding unit. A drainage tray is arranged below the cup so as to cover the moving area of the drain port when the substrate holding unit and the cup move in X-directions and Y-directions. An exhaust unit is arranged at a position corresponding to the position of the exhaust port of the cup when the substrate holding unit is in its spin-drying position. The exhaust unit is connected to the exhaust port to suck the interior of the cup when the spin-drying of the substrate is executed. The use of a flexible tube which is always connected to the exhaust port is no longer necessary.

Abstract: A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration.

Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract: Two axially parallel rolls are pressed against each other in a device for producing and/or treating a moving material web. Sensor elements are arranged in the force transmission path running from the force-producing elements via the rolls, outside roll bodies of the two rolls. As a result of displacing the sensor elements out of the roll bodies of the rolls, the production of the rolls is less complicated and less expensive. No sensors have to be embedded in the roll bodies, which opens up the possibility of using standard rolls. In addition, the occasional grinding of the rolls can in this way be performed without any regard to the sensor elements. Nevertheless, the pressure prevailing between the rolls can continue to be measured directly, since the sensor elements are arranged in the transmission path of the pressing force.

Abstract: The present invention provides a recovery processing method to restore the substrate processing apparatus to an operating state after correcting an abnormality having occurred in the substrate processing apparatus in operation and having resulted in a stop in the operation, comprising a substrate retrieval step in which substrate salvage processing is first executed for a wafer W left in a chamber in the substrate processing apparatus in correspondence to the extent to which the wafer has been processed at the time of the operation stop and the substrate having undergone the substrate salvage processing is then retrieved into the cassette storage container and an apparatus internal state restoration step in which the states inside the individual chambers of the substrate processing apparatus are restored.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.

Abstract: An apparatus and a method for printing of three-dimensional objects are provided. The method may include printing a three-dimensional object using a printing head having a plurality of nozzles through which building materials are dispensed in layers; detecting defective nozzles in the printing head using a controller; processing a map of missing nozzles according to data defining the object; and adjusting printing coordinates of the object to be printed, to compensate for the defective nozzles.

Abstract: The present invention provides a recovery processing method to restore the substrate processing apparatus to an operating state after correcting an abnormality having occurred in the substrate processing apparatus in operation and having resulted in a stop in the operation, comprising a substrate retrieval step in which substrate salvage processing is first executed for a wafer W left in a chamber in the substrate processing apparatus in correspondence to the extent to which the wafer has been processed at the time of the operation stop and the substrate having undergone the substrate salvage processing is then retrieved into the cassette storage container and an apparatus internal state restoration step in which the states inside the individual chambers of the substrate processing apparatus are restored.

Abstract: An exemplary glue dispensing process is provided. A lens module including a lens barrel and an annular spacer received in the lens barrel is provided. The lens module is rotated around a central axis of the lens barrel in a manner such that rotational speed of the lens module is variable in an initial stage and is essentially constant in a subsequent steady stage. Whether the rotational speed of the lens module is in the initial stage or the subsequent steady stage is then detected. A first operating pressure and a second operating pressure different from the first operating pressure are applied onto the glue to dispense the glue onto the spacer during one revolution of the lens module, corresponding to both the rotational speed of the initial stage and the subsequent steady stage.

Abstract: The present invention comprises systems and methods for providing electronic quality control in a process for applying a polyurethane to a substrate. One aspect of the present invention includes a computer-implemented method for providing electronic quality control during manufacturing of a polyurethane coated article. The method can include providing a user interface for a user to input at least one operating characteristic associated with a process for manufacturing a polyurethane coated article. Furthermore, the method can include receiving a selection of at least one operating characteristic from the user, and receiving at least one condition associated with the operating characteristic. Moreover, the method can include monitoring a process for manufacturing a polyurethane coated article, wherein a change to the operating characteristic can be detected. The method can also include generating a notification if the at least one condition is detected.

Abstract: The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum source is connected at an exit opening. Pressure within the workpiece is monitored and the resulting pressure information is used for maintaining a condition that exhibits the hollow cathode effect. Optionally, a pre-cleaning may be provided by introducing a hydrocarbon mixture and applying a negative bias to the workpiece, so as to sputter contaminants from the workpiece using argon gas. Argon gas may also be introduced during the coating processing to re-sputter the coating, thereby improving uniformity along the length of the workpiece. The coating may be a diamond-like carbon material having properties which are determined by controlling ion bombardment energy.

Abstract: A chemical dispensing control device capable of indicating an open/closed position of a drain valve and generating an interlock signal when the drain valve is opened in a chemical coating process is disclosed. The chemical dispensing control device for use in a photo spinner to alarm and generate an interlock signal in case the drain valve is not closed in a spin coating process includes a variable resistance for detecting a voltage corresponding to a change of resistance value based on an open/close position of said drain valve and a controller for receiving the detected voltage, determining an open/close position of the drain valve, and generating an interlock signal when the closed position of the drain valve is not detected during the coating process.

Abstract: A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.

Abstract: Solder paste application, inspection and correction. Following or during application of solder paste on a substrate, the result thereof is inspected and any detected errors are registered. Following an evaluation as to whether correction of these errors is required and if it would be worthwhile, the errors are corrected. The correction involves removing solder paste from locations where so required, and jetting of additional solder paste to locations where so required.

Abstract: Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.

Abstract: A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.

Abstract: A gas supplying apparatus for a semiconductor manufacturing device has an interlock apparatus that includes at least one solenoid valve that controls the gas supply from a gas source to the semiconductor manufacturing device, a main controller configured to ouput a control signal for the semiconductor manufacturing device and a driver signal, a driver configured to apply a driving voltage to the at least one solenoid valve in response to the driver signal, and an interlocker configured to sense the open/shut state of the solenoid valves and configured to transmit an interlock signal to the main controller.

Abstract: When vehicle wheels are powder-coated with powder coating, those surfaces on which no coating is wanted are always also coated. To suck off the powder coating from these surface areas before it is baked in, a device which includes a conveyor system, an electronic camera and a suction station is used. The electronic camera records the axial and angular position of the vehicle wheels which pass it, and supplies corresponding data to a controller. After a certain time delay, this causes a suction head in the suction station to move, in such a way that it approaches the vehicle wheel with appropriate alignment of its axis and angular position, and using suction nozzles sucks off those surfaces of the vehicle wheel on which the powder coating is not wanted. During the suction process, the suction head moves together with the vehicle wheel, at the same speed.

Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.