Abstract: A gas barrier film comprising a substrate layer containing a filler, an anchor coat layer provided on the substrate layer, and a gas barrier layer provided on the anchor coat layer. In the gas barrier film, an average particle diameter D of the filler is 0.02 to 3.00 ?m, a thickness of the substrate layer is equal to or larger than the average particle diameter of the filler, and a total thickness T of one or more layers disposed between the substrate layer and the gas barrier layer is 0.02 to 0.40 ?m.

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: An aspect of the present disclosure is a method that includes applying a solution that includes a first solvent, a halogen-containing precursor, and a metal halide to a substrate to form a coating of the solution on the substrate, contacting the coating with a second solvent to form a first plurality of organo-metal halide perovskite crystals on the substrate, and thermally treating the first plurality of organo-metal halide perovskite crystals, such that at least a portion of the first plurality of organo-metal halide perovskite crystals is converted to a second plurality of organo-metal halide perovskite crystals on the substrate. The halogen-containing precursor and the metal halide are present in the solution at a molar ratio of the halogen-containing precursor to the metal halide between about 1.01:1.0 and about 2.0:1.0, and a property of the second plurality of organo-metal halide perovskite crystals is improved relative to a property of the first plurality of organo-metal halide perovskite crystals.

Abstract: Provided is a battery armoring stainless steel foil which, without the need for a special treatment such as corona discharge, has excellent adhesiveness to resin after being thermally shocked and after being immersed in an electrolyte solution. A battery armoring stainless steel foil (1) includes an oxide film (1a), having a thickness of not less than 2 nm, which contains (i) one or more metallic elements, existing as a hydroxide, in an amount of not less than 35 mol percent and (ii) SiO2 in an amount of not more than 40 mol percent, the battery armoring stainless steel foil (1) having an arithmetic mean roughness Ra of less than 0.1 ?m but not less than 0.02 ?m in a direction orthogonal to a direction in which the battery armoring stainless steel foil (1) has been rolled.

Abstract: The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Abstract: A photoelectric conversion device including a perovskite compound, a method of manufacturing the same and an imaging device including the same.

Abstract: The flexible solar panel includes a polymer matrix and a plant extract incorporated in the polymer matrix. The plant extract can be an extract of chard (B. vulgaris subsp. cicla) including an organic dye. The plant extract can include chloroplasts. The polymer matrix may be formed from either poly(vinyl alcohol) or polystyrene. The flexible solar panel can be green.

Abstract: An electronic device comprises a first encapsulating film in direct contact with a light-receiving and transmitting film and a second encapsulating film in direct contact with a back sheet. The first encapsulating film has a zero shear viscosity greater than that of the second encapsulating film. The back sheet of the electronic device contains fewer bumps than the back sheet of a comparable electronic device having a first encapsulating film with a zero shear viscosity less than or equal to that of the second encapsulating film.

Abstract: A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.

Abstract: In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P.

Abstract: Provided are microelectronics substrates and methods of manufacturing and using the microelectronics substrate. An example of a microelectronics substrate includes a carrier, a silicate bonding layer, and a flexible substrate, wherein the flexible substrate is bonded to the silicate bonding layer. The microelectronics substrate comprises a peel strength between the flexible substrate and silicate bonding layer; wherein the peel strength between the flexible substrate and the silicate bonding layer is below 1 kgf/m.

Abstract: A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.

Abstract: A concentrator photovoltaic module according to one embodiment of the present disclosure includes: a case; a substrate disposed on a bottom surface of the case and having a plurality of stacked wiring layers; and concentrator photovoltaic elements disposed on the substrate and connected to the wiring layers. The concentrator photovoltaic elements connected to different wiring layers are connected to each other in parallel. According to the concentrator photovoltaic module according to the one embodiment of the present disclosure, output voltage can be decreased.

Abstract: The present invention is related to using a plasmonic energy conversion device comprised of a non-permeable substrate and of a plurality of nanorods, either free standing or embedded in aluminum matrix, that utilizes plasmons to generate vapor from a fluid as a result of being exposed to radiation. Methods of manufacturing the plasmonic energy converter device are described.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: A multilayer film structure including a top encapsulation layer A, a tie Layer B between top Layer A and bottom Layer C and a bottom layer C, the multilayer film structure characterized in that tie Layer B includes a crystalline block composite resin or a block composite resin and bottom Layer C includes a polyolefin having at least one melting point greater than 125 C.

Abstract: A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent).

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract: Organic semiconductor formulations are disclosed. One of the formulations comprises a single or mixture of non-halogenated, hydrocarbon solvent, a conjugated polymer donor and a fullerene or small molecular acceptor, wherein the conjugated polymer contains branched alkyl chains with 21 or more carbon atoms. In addition, organic semiconductor film forming methods and applications using of the above-mentioned formulations are disclosed.

Abstract: A process of growth in the thickness of at least one facet of a colloidal inorganic sheet. By sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described.

Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: A solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode on the first semiconductor region, a second electrode on the back surface of the semiconductor substrate, and a second semiconductor region positioned between the semiconductor substrate and the second electrode and doped with impurities of a second conductive type opposite the first conductive type, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: The present invention provides quantum dots-integrated inorganic-organic hybrid nanorods and the method to make such nanohybrids. It also provides a method to assemble light transmission controlling devices using the nanohybrids provided in this invention. In this invention, the developed nanohybrids for particular light controlling devices, more specifically SPDs have been disclosed.

Abstract: Disclosed is a solar cell including a semiconductor substrate, a first conductive area disposed on one surface of the semiconductor substrate, the first conductive area being of a first conductive type, a second conductive area of a second conductive type opposite to the first conductive type, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. At least one of the first conductive area and the second conductive area is formed of a metal compound layer.

Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.

Abstract: A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.

Abstract: The present specification relates to a conductive laminate and a transparent electrode including the same.

Abstract: A method of manufacturing a solar cell includes: providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate; providing a mask layer on the insulating layer; removing a part of the mask layer by laser irradiation so as to form a first opening through which the insulating layer is exposed; and removing, by an etching agent, the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed.

Abstract: The present invention relates to a photovoltaic element comprising one front electrode and one further electrode comprising respectively one glass substrate and one electrically conductive electrode layer which is disposed on the glass substrate, at least two porous carrier layers which are disposed between the two electrodes, the two electrodes being connected to the adjacent porous carrier layers without a spatial interval, a plurality of glass solder webs disposed between the two electrodes for fixing the at least two porous carrier layers, and at least one photovoltaically active material which is introduced into the at least two porous carrier layers and has a concentration gradient.

Abstract: A photoelectric conversion element, having a photoconductor layer containing semiconductor fine particles carrying a metal complex dye of Formula (I); a metal complex dye, a dye solution, a dye-adsorbed electrode, a dye-sensitized solar cell, and a method for producing the solar cell: M(LA)(LD)(LX)mX·(CI)mY??Formula (I) M represents a metal ion, LA represents a ligand of Formula (AL), LD represents a bidentate or tridentate ligand, at least one of coordinating atoms being an anion; LX represents a monodentate ligand; CI represents a counter ion; mX is 0 or 1; mY is 0 to 3; Rings A to C represent a heterocycle; Z1 and Z2 represent a carbon or nitrogen atom; Anc1 to Anc3 represent an acidic group; X1 to X3 represent a single bond or linking group; R1 to R3 represent a substituent; l1, l3, l2, m1, m3, m2, n1, n2, and n3 each are an integer.

Abstract: There is provided an illumination device (100, 150, 200, 300) comprising: a periodic plasmonic antenna array (114), comprising a plurality of individual antenna elements (106) arranged in an antenna array plane, the plasmonic antenna array being configured to support surface lattice resonances at a first wavelength, arising from diffractive coupling of localized surface plasmon resonances in the individual antenna elements; a photon emitter (152) configured to emit photons at the first wavelength, the photon emitter being arranged in close proximity of the plasmonic antenna array such that at least a portion of the emitted photons are emitted by a coupled system comprising said photon emitter and said plasmonic antenna array, wherein the plasmonic antenna array is configured to comprise plasmon resonance modes being out-of plane asymmetric, such that light emitted from the plasmonic antenna array has an anisotropic angle distribution.

Abstract: A method of producing graphene sheets from coke or coal powder, comprising: (a) forming an intercalated coke or coal compound by electrochemical intercalation conducted in an intercalation reactor, which contains (i) a liquid solution electrolyte comprising an intercalating agent; (ii) a working electrode that contains the powder in ionic contact with the liquid electrolyte, wherein the coke or coal powder is selected from petroleum coke, coal-derived coke, meso-phase coke, synthetic coke, leonardite, lignite coal, or natural coal mineral powder; and (iii) a counter electrode in ionic contact with the electrolyte, and wherein a current is imposed upon the working electrode and the counter electrode for effecting electrochemical intercalation of the intercalating agent into the powder; and (b) exfoliating and separating graphene planes from the intercalated coke or coal compound using an ultrasonication, thermal shock exposure, mechanical shearing treatment, or a combination thereof to produce isolated graphen

Abstract: The present invention relates to a method for patterning a metal nanowire-based transparent conductive film through surface treatment and, more particularly, to a method wherein the refractive index is adjusted by adding an optical functional layer prior to a patterning process, the surface of a metal nanowire transparent conductive film is oxidized using a surface treatment agent composition or a salt compound is generated, thereby changing the color and insulating the surface, and a film having excellent visibility is patterned.

Abstract: The present invention provides an electrode for water-splitting reaction that is capable of increasing conductive path between a photocatalyst layer and a current collecting layer without inhibiting light absorption by photocatalyst, which comprises: a photocatalyst layer 10; a current collecting layer 30; and a contact layer 20 that contains semiconductor or good conductor and is provided between the photocatalyst layer 10 and the current collecting layer 30, wherein the contact layer 20 is provided along the surface shape of the photocatalyst layer 10 at the current collecting layer 30 side of the photocatalyst layer 10.

Abstract: A driving support apparatus according the embodiment includes: a determination unit that determines driving support control having a driving support resource amount that is capable of assuring required resources with respect to a resource amount that is capable of being assured by a level of a vehicle driver's concentration on driving, the required resources being assumed to be required for safe driving; and a driving support unit that changes the driving support control to be performed to driving support control that is determined by the determination unit to be capable of assuring the required resources.

Abstract: A photovoltaic device includes a substrate, an active layer with at least one organic material, and a pair of electrodes supported by the substrate. The active layer includes a first surface that receives light and a second surface that is supported by the substrate. The second surface is opposite to the first surface. Surfaces of the electrodes that contact surfaces of the active layer are perpendicular to the substrate.

Abstract: Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The alternating epitaxial layers can form channel regions in single and multigate transistor structures. In alternate embodiments, one of the two alternating layers is selectively etched away to form nanoribbons or nanowires of the remaining material. The resulting strained nanoribbons or nanowires form the channel regions of transistor structures. Also provided are computing devices comprising transistors comprising channel regions comprised of alternating compressively and tensilely strained epitaxial layers and computing devices comprising transistors comprising channel regions comprised of strained nanoribbons or nanowires.

Abstract: A method of recycling a solar cell module includes an enclosing layer that encloses a solar cell therein, a light-receiving surface layer laminated on one surface of the enclosing layer, and a back sheet laminated on the other surface of the enclosing layer, the method including: a first removing step of mechanically removing the back sheet; a second removing step of mechanically removing from a side on which the back sheet is removed the entire solar cell and the enclosing layer to such a depth that a part of the enclosing layer having a predetermined thickness remains on the light-receiving surface layer, after the first removing step; and a third removing step of removing the part of the enclosing layer remaining on the light-receiving surface layer by immersion in a solution that causes swelling of the enclosing layer, after the second removing step, thereby improving an overall efficiency.

Abstract: There is provided a metal-based particle assembly comprising 30 or more metal-based particles separated from each other and disposed in two dimensions, the metal-based particles having an average particle diameter in a range of from 200 to 1600 nm, an average height in a range of from 55 to 500 nm, and an aspect ratio, as defined by a ratio of the average particle diameter to the average height, in a range of from 1 to 8, wherein the metal-based particles are disposed such that an average distance between adjacent metal-based particles may be in a range of from 1 to 150 nm. This metal-based particle assembly presents significantly intense plasmon resonance and also allows plasmon resonance to have an effect over a range extended to a significantly large distance.

Abstract: A method for making a polymer solar cell includes placing a carbon nanotube array into a polymer solution. The carbon nanotube array includes a plurality of carbon nanotubes. The polymer solution is cured to form a polymer layer. The polymer layer includes a first polymer surface and a second polymer surface opposite to the first polymer surface. Each of the plurality of carbon nanotubes includes a first carbon nanotube portion and a second carbon nanotube portion, the first carbon nanotube portion is embedded in the polymer layer, and the second carbon nanotube portion is exposed from the polymer layer. The second carbon nanotube portion is tilted on the first polymer surface to form a carbon nanotube layer. A cathode electrode is formed on a surface of the carbon nanotube layer away from the polymer layer. An anode electrode is formed on the second polymer surface.

Abstract: Provided herein is an apparatus including a layer stack. A first granular metal layer overlies the layer stack, wherein the first granular metal layer includes first metal grains separated by voids. A first granular non-metal layer overlies the first granular metal layer, wherein the first granular non-metal layer includes first non-metal grains separated by a first segregant. A second granular non-metal layer overlies the first granular non-metal layer, wherein the second granular non-metal layer includes second non-metal grains separated by a second segregant. A second granular metal layer overlies the second granular non-metal layer, wherein the second granular metal layer includes second metal grains separated by a third segregant.

Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.