Abstract: A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.

Abstract: The present description is directed to a manufacturing method of solid-state dye-sensitized solar cells and a solid-state electrolyte filling device used in the manufacturing method. The present invention provides a manufacturing method of dye-sensitized solar cells that fills the solid-state electrolyte more uniformly with enhanced efficiency to secure higher light-to-energy conversion efficiency.

Abstract: Resistive random-access memory (RRAM) devices and methods of manufacturing thereof are disclosed. A device comprises a first transparent conducting oxide (TCO) layer and a second TCO layer over the first TCO layer. The device further comprises a first dielectric layer between the first TCO layer and the second TCO layer, a second dielectric layer between the second TCO layer and the first dielectric layer, and a metal layer between the first dielectric layer and the second dielectric layer.

Abstract: The invention relates to the field of organic electronic devices (1) with diffusion barriers and to a method to manufacture such organic electronic devices (1) to provide an organic electronic device (1) with excellent performance, which is as stable as possible over time. The organic electronic device (1) with a substrate (2), a first electrode (3) arranged on top of the substrate (2) and a functional layer stack (FLS) arranged on top of the first electrode (3) comprising one or more organic layers (41, 42, 43) and a second electrode (5), wherein the organic electronic device (1) further comprises at least one essentially transparent and electrically conductive graphene layer (6) arranged in contact to at least one of the organic layers (41, 42, 43) acting as a diffusion barrier against diffusion of atoms, ions or molecules into this organic layer (41, 42, 43).

Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Abstract: A piezoelectric-photovoltaic hybrid structure is described, having a plurality of superposed layers including a photovoltaic layer and a piezoelectric substrate. A method of forming such a structure is also described, including the steps of providing a piezoelectric substrate and superposing a photovoltaic layer over the substrate. A power conversion system is described, comprising such a hybrid structure with a first circuit connected to the piezoelectric substrate and a second circuit connected to the photovoltaic layer. Also discussed is a method of generating, storing, distributing, or consuming electrical energy, involving the use of such a system in connection with a distribution circuit or network, electrical load, or energy storage device. A further power conversion system is described where the piezoelectric and photovoltaic circuits are connected to a single, or a respective, DC-DC converter. A set of such power conversion systems may be connected in series at their output terminals.

Abstract: There is provided a wiring connection structure connecting a transparent conductive film formed on a main surface of a transparent substrate having the main surface and a metal wiring formed on the main surface and made of a metal material, wherein the metal wiring is formed to extend from the main surface onto the transparent conductive film and to cover the transparent conductive film.

Abstract: The solar fuels generator includes an ionically conductive separator between a gaseous first phase and a second phase. A photoanode uses one or more components of the first phase to generate cations during operation of the solar fuels generator. A cation conduit is positioned provides a pathway along which the cations travel from the photoanode to the separator. The separator conducts the cations. A second solid cation conduit conducts the cations from the separator to a photocathode.

Abstract: A thin-film spectrally selective coating for receiver tube of vacuumed type for use in thermodynamic solar installations and operating both at medium temperature (up to 400° C.) and at high temperature (up to 550° C.), coating where the optically absorbing layer is a multilayer of cermet material of type: WyN—AlNx or MoyN—AlNx, material prepared with reactive co-sputtering technique from an Al target and a W or Mo target, process conducted under a transition regimen, under PFM (Plasma Emission Monitoring) or CVM (Cathode Voltage Monitoring) monitoring for the sole Al target, with inletting near the Al target of a N2 amount adequate for obtainment of a high-transparency, high growth rate sub-stoichiometric ceramic AlN and with inletting near the W or Mo target of a N2 amount adequate for obtainment of the sole W2N or Mo2N phase, phase very stable at high temperature, such as to make the cermet material as close as possible to the formulation W2N—AlNx or Mo2N—AlNx (with x comprised between 0.90 and 1.

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract: A method of producing an electro-optic device includes providing a substructure, depositing a network of nanowires on the substructure, depositing a sol-gel solution on the network of nanowires and the substructure, and removing solvent from the sol-gel solution to provide fusing material that causes junctions of nanowires within the network of nanowires to fuse together to reduce electrical sheet resistance of the network of nanowires. An electro-optic device includes a sub-structure, a network of nanowires deposited on the substructure, and a plurality of nanoparticles attached to the network of nanowires. The plurality of nanoparticles fuse junctions of overlapping nanowires together to reduce electrical sheet resistance of the network of nanowires.

Abstract: Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate; a back electrode layer including molybdenum on the substrate; a light absorbing layer on the back electrode layer; and a window layer on the light absorbing layer, wherein the back electrode layer includes a first electrode layer on the substrate, a barrier layer on the first electrode layer and a second electrode layer on the barrier layer.

Abstract: Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

Abstract: Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell.

Abstract: An energy-harvesting system includes a transducer to convert environmental energy into a harvesting electrical signal. A storage element stores electrical energy derived from conversion of the harvested environmental energy. A harvesting interface supplies an electrical charging signal to the storage element. The harvesting interface is selectively connected to the storage element in response to a control signal. The control signal causes the connection when the harvesting electrical signal exceeds a threshold. Conversely, the control signal causes the disconnection when the harvesting electrical signal is less than the threshold.

Abstract: In the present invention, in order to achieve a point contact, a thin film solar cell has a thin film light absorbing layer (3) disposed between a transparent conducive film (4) and a back-side metal electrode layer (2), and at the interface between the back-side metal electrode layer (2) and the light absorbing layer (3), the thin film solar cell is provided with a nanoparticle dispersion layer (5) including nanoparticles (6, 6 . . . ), where at least the surface of the nanoparticles is an insulator.

Abstract: Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.

Abstract: A method and apparatus for forming a solar cell structure. A first wafer and a second wafer are positioned relative to each other such that first nanotubes on the first wafer are opposite to second nanotubes on the second wafer. The first nanotubes are connected to the second nanotubes. The first wafer is connected to the second wafer to form the solar cell structure.

Abstract: A solar power generation system for providing operating power for a desired application, the system includes one or more solar-array modules, wherein each of the one or more solar-array modules includes a multiplicity of solar cells and a high efficiency DC to DC power converter. The multiplicity of solar cells is arranged in strings of serial-units electrically connected in parallel to form a crisscross matrix array of solar cells, which matrix allows currents to bypass malfunctioning cells, thereby improving the performance of the system. The power converter includes fast MOSFET transistors having duty cycle that is operationally constant and is almost 50%. Optionally, the power converter includes a plus conductive pad and a minus conductive pad, wherein each of the strings of serial-units is individually wired to the plus conductive pad and the minus conductive pad.

Abstract: Disclosed is an electrode body for a solar cell, which is capable of being used as a component of both an organic thin-film solar cell and a dye-sensitized solar cell, and has excellent heat resistance. This electrode body for a solar cell is provided with a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate, in which the conductive polymer layer includes: a polymer derived from at least one monomer selected from the group consisting of 3,4-disubstituted thiophenes; and an anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more. Additionally, the density of the conductive polymer layer is in the range of 1.15 to 1.80 g/cm3. The dense conductive polymer layer including the anion as a dopant exhibits excellent heat resistance.

Abstract: One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.

Abstract: This invention relates to an encapsulation structure comprising a luminescent wavelength conversion material for at least one solar cell or photovoltaic device which acts to enhance the solar harvesting efficiency of the solar cell device. The luminescent wavelength conversion material comprises at least one chromophore and an optically transparent polymer matrix. Application of the encapsulation structure, as disclosed herein, to solar harvesting devices, including solar cells, solar panels, and photovoltaic devices, improves the solar harvesting efficiency of the device by widening the spectrum of incoming sunlight that can be effectively converted into electricity by the device.

Abstract: The invention relates to a composition for printing electrodes on a substrate, comprising 30 to 90% by weight of electrically conductive particles, 0 to 7% by weight of glass frit, 0.1 to 5% by weight of at least one absorbent for laser radiation, 0 to 8% by weight of at least one matrix material, 0 to 8% by weight of at least one organometallic compound, 3 to 50% by weight of water as a solvent, 0 to 65% by weight of at least one retention aid and 0 to 5% by weight of at least one additive, based in each case on the total mass of the composition. The invention further relates to a use of the composition.

Abstract: An apparatus, method and system for operating a power converter of a plurality of serially connected power converters coupled using chaotic democratic control includes: a DC voltage module generating a set current value for the power converter to bias a DC source at a set point voltage and a switching controller. The switching controller determining an upper threshold and lower threshold based on the set current value, and comparing a system current value to the upper and lower thresholds to determine an operating state of the power converter, where the system current is generated by the plurality of converters.

Abstract: In order to increase the generation efficiency of a silicon dioxide solar cell, two conductive substrates are arranged so that the conductive surfaces thereof face each other, at least one of the substrates is disposed upon the substrate facing the light entry-side substrate, and an electrolyte is filled between the silicon dioxide particles compact and the light entry-side substrate. Silicon dioxide solar cells having this configuration exhibit a significantly increased short circuit current and open circuit voltage in comparison to solar cells in which the silicon dioxide and the electrolyte are mixed. This configuration can further be improved by disposing a titanium dioxide solar cell or a dye-sensitized titanium dioxide solar cell upon the light entry-side substrate to further increase the short circuit current and the open circuit voltage.

Abstract: Techniques, apparatus, materials and systems are described for providing solar cells. In one aspect, an apparatus includes a high efficiency dye sensitized solar cell (DSSC). The DSSC includes three-dimensional nanostructured electrodes. The three-dimensional nanostructured electrodes can include a cathode; an electrolyte; and anode that includes TiO2 nanotubes arranged in a three-dimensional structure; and a photosensitive dye coated on the anode.

Abstract: A biaxially stretched polyester film for protecting a back surface of a solar cell, containing a polyester resin that is polymerized with addition of a Ti catalyst, a Mg compound, a P compound and a nitrogen-containing heterocyclic compound, and having a volume resistivity at 285° C. is 10×107 ?·cm or less, is improved in hydrolysis resistance and electrostatic adhesion property.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: The present invention provides a solid-state p-n heterojunction comprising a p-type material in contact with an n-type material wherein said n-type material comprises SnO2 having at least one surface-coating of a surface coating material having a higher band-gap than SnO2 and/or a conduction band edge closer to vacuum level than SnO2, such as MgO. The invention also provides optoelectronic devices such as solar cells or photo sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: Provided is a collector sheet for a solar cell, wherein the collector sheet for solar cell can prevent short circuiting between a non-photoreception surface side element and a wiring section, as well as cushioning shocks. This collector sheet (2) for a solar cell has a circuit (22) on the surface of a resin substrate (21). A sealing material layer (23) is stacked on the circuit (22), and in the sealing material layer (23) on the wiring section (221) is formed a conductive recessed part (24) through which the wiring section (221) is exposed, in order to provide conductivity between an electrode (4) on the non-photoreception surface side of the solar cell element (1), and the wiring section (221) corresponding thereto, with the sealing material layer (23) therebetween.

Abstract: The present invention is concerned with a plasmonic enhanced tandem dye sensitized solar cell system. The system has plasmonic nanostructures integrated to both a photoanode and a photocathode for enhancing respective electron and hole carrier transfer.

Abstract: An object of the present invention is to provide an electrolyte for a photoelectric conversion element that can achieve superior moisture resistance. The electrolyte for a photoelectric conversion element of the present invention is an electrolyte for a photoelectric conversion element which contains an organic salt compound (A) and a lamellar clay mineral (B), wherein the above-mentioned organic salt compound (A) contains more than 50 mass %, in terms of cationic weight, of an organic salt compound (a1) having a specific cation.

Abstract: A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.

Abstract: In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.

Abstract: Organic dye for a dye-sensitized solar cell (DSSC) comprising at least one electron-acceptor unit and at least one ?-conjugated unit. Said organic dye is particularly useful in a dye-sensitized photoelectric transformation element which, in its turn, can be used in a dye-sensitized solar cell (DSSC).

Abstract: The invention provides an inorganic reaction system for the preparation of electroconductive paste. Particularly, an inorganic reaction system comprises conductive glass. The inorganic reaction system may comprise a silver containing matrix forming composition. The silver containing matrix composition may comprise at least one of silver oxide or silver halide, or both. The invention also provides solar cells manufactured utilizing an electroconductive paste comprising an inorganic reaction system comprising conductive glass, and methods of manufacturing solar cells utilizing an electroconductive paste comprising an inorganic reaction system comprising conductive glass.

Abstract: A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

Abstract: A method for controlling a group of photovoltaic energy generators, the method includes providing, to a junction that is coupled to a component of a first photovoltaic energy generator (PEG), power generated by at least a second PEG such as to increase the power that is generated from the group of photovoltaic energy generators (PEGs); wherein the group of PEGs comprises the first PEG and the second PEG.

Abstract: One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.

Abstract: A conductive paste including a conductive powder, a metallic glass including aluminum (Al) and a first element which forms a solid solution with the aluminum (Al), and an organic vehicle.

Abstract: By using a nano-scale patterning process, a dislocation defect density of a GaN epitaxy layer can be further reduced. This is because the nano-scale epitaxy structure dimension is advantageous to the reduction of the strain energy accumulated by mismatched lattices, thereby decreasing the possibility of generating defects. It is verified that the nano-scale patterning process can effectively decrease the dislocation defect density of the GaN epitaxial layer on a sapphire substrate. Considering uniformity and reproducibility on the application of the large-size wafer, the invention has utilized the soft mask NIL patterning technology to successfully implement the uniform deposition and position control of the InAs quantum dot on a GaAs substrate. This further utilizes the NIL technology in conjunction with dry-etching to perform the nano-scale patterning on a heterogeneous substrate, such as Si, sapphire or the like.

Abstract: An organic photovoltaic cell, containing a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer contains a polymer having a structural unit represented by formula (I): wherein X represents S, NR2, O, Se or Te; Y represents NR2, O, Te, SO, SO2 or CO; and R1 and R2 represent a hydrogen atom or a substituent.

Abstract: Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

Abstract: This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.

Abstract: A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

Abstract: Disclosed is an electrode body for a solar cell, which is capable of being used as a component of both an organic thin-film solar cell and a dye-sensitized solar cell, and has excellent heat resistance. This electrode body for a solar cell is provided with a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate, in which the conductive polymer layer includes: a polymer which is obtained by polymerizing a monomer selected from the group consisting of 3,4-disubstituted thiophenes; and an anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more. Since the anion of the organic non-sulfonate compound is included as a dopant in the conductive polymer layer, the heat resistance of the conductive polymer layer is improved.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.

Abstract: A solar module is provided with improved photoelectric conversion efficiency. A first electrode and a second electrode (21, 22) each contain a plated film. Each plated film has a feed point (50). The feed points (50) are positioned in bus bar portions (21b, 22b). A wiring member (30) is connected electrically to the first electrode or the second electrode (21, 22) in the finger portions (21a, 22a).