Abstract: The present invention relates to a method for patterning a metal nanowire-based transparent conductive film through surface treatment and, more particularly, to a method wherein the refractive index is adjusted by adding an optical functional layer prior to a patterning process, the surface of a metal nanowire transparent conductive film is oxidized using a surface treatment agent composition or a salt compound is generated, thereby changing the color and insulating the surface, and a film having excellent visibility is patterned.

Abstract: The present invention provides an electrode for water-splitting reaction that is capable of increasing conductive path between a photocatalyst layer and a current collecting layer without inhibiting light absorption by photocatalyst, which comprises: a photocatalyst layer 10; a current collecting layer 30; and a contact layer 20 that contains semiconductor or good conductor and is provided between the photocatalyst layer 10 and the current collecting layer 30, wherein the contact layer 20 is provided along the surface shape of the photocatalyst layer 10 at the current collecting layer 30 side of the photocatalyst layer 10.

Abstract: A driving support apparatus according the embodiment includes: a determination unit that determines driving support control having a driving support resource amount that is capable of assuring required resources with respect to a resource amount that is capable of being assured by a level of a vehicle driver's concentration on driving, the required resources being assumed to be required for safe driving; and a driving support unit that changes the driving support control to be performed to driving support control that is determined by the determination unit to be capable of assuring the required resources.

Abstract: A photovoltaic device includes a substrate, an active layer with at least one organic material, and a pair of electrodes supported by the substrate. The active layer includes a first surface that receives light and a second surface that is supported by the substrate. The second surface is opposite to the first surface. Surfaces of the electrodes that contact surfaces of the active layer are perpendicular to the substrate.

Abstract: Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The alternating epitaxial layers can form channel regions in single and multigate transistor structures. In alternate embodiments, one of the two alternating layers is selectively etched away to form nanoribbons or nanowires of the remaining material. The resulting strained nanoribbons or nanowires form the channel regions of transistor structures. Also provided are computing devices comprising transistors comprising channel regions comprised of alternating compressively and tensilely strained epitaxial layers and computing devices comprising transistors comprising channel regions comprised of strained nanoribbons or nanowires.

Abstract: A method of recycling a solar cell module includes an enclosing layer that encloses a solar cell therein, a light-receiving surface layer laminated on one surface of the enclosing layer, and a back sheet laminated on the other surface of the enclosing layer, the method including: a first removing step of mechanically removing the back sheet; a second removing step of mechanically removing from a side on which the back sheet is removed the entire solar cell and the enclosing layer to such a depth that a part of the enclosing layer having a predetermined thickness remains on the light-receiving surface layer, after the first removing step; and a third removing step of removing the part of the enclosing layer remaining on the light-receiving surface layer by immersion in a solution that causes swelling of the enclosing layer, after the second removing step, thereby improving an overall efficiency.

Abstract: There is provided a metal-based particle assembly comprising 30 or more metal-based particles separated from each other and disposed in two dimensions, the metal-based particles having an average particle diameter in a range of from 200 to 1600 nm, an average height in a range of from 55 to 500 nm, and an aspect ratio, as defined by a ratio of the average particle diameter to the average height, in a range of from 1 to 8, wherein the metal-based particles are disposed such that an average distance between adjacent metal-based particles may be in a range of from 1 to 150 nm. This metal-based particle assembly presents significantly intense plasmon resonance and also allows plasmon resonance to have an effect over a range extended to a significantly large distance.

Abstract: A method for making a polymer solar cell includes placing a carbon nanotube array into a polymer solution. The carbon nanotube array includes a plurality of carbon nanotubes. The polymer solution is cured to form a polymer layer. The polymer layer includes a first polymer surface and a second polymer surface opposite to the first polymer surface. Each of the plurality of carbon nanotubes includes a first carbon nanotube portion and a second carbon nanotube portion, the first carbon nanotube portion is embedded in the polymer layer, and the second carbon nanotube portion is exposed from the polymer layer. The second carbon nanotube portion is tilted on the first polymer surface to form a carbon nanotube layer. A cathode electrode is formed on a surface of the carbon nanotube layer away from the polymer layer. An anode electrode is formed on the second polymer surface.

Abstract: Provided herein is an apparatus including a layer stack. A first granular metal layer overlies the layer stack, wherein the first granular metal layer includes first metal grains separated by voids. A first granular non-metal layer overlies the first granular metal layer, wherein the first granular non-metal layer includes first non-metal grains separated by a first segregant. A second granular non-metal layer overlies the first granular non-metal layer, wherein the second granular non-metal layer includes second non-metal grains separated by a second segregant. A second granular metal layer overlies the second granular non-metal layer, wherein the second granular metal layer includes second metal grains separated by a third segregant.

Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Abstract: Provided are a light emitting device having a nitride quantum dot and a method of manufacturing the same. The light emitting device may include: a substrate; a nitride-based buffer layer arranged on the substrate; a plurality of nanorod layers arranged on the nitride-based buffer layer in a vertical direction and spaced apart from each other; a nitride quantum dot arranged on each of the plurality of nanorod layers; and a top contact layer covering the plurality of nanorod layers and the nitride quantum dots. A pyramid-shaped material layer may be further included between each of the plurality of nanorod layers and each of the nitride quantum dots. One or the plurality of nitride quantum dots may be arranged on each of the nanorod layers.

Abstract: A fiber-shaped electric energy harvesting and storage device includes a substrate having a fiber shape, a lithium ion storage unit disposed to surround the substrate, and a plurality of photoelectric conversion units disposed to surround the lithium ion storage unit.

Abstract: A hybrid organic-inorganic thin film is provided. The hybrid organic-inorganic thin film comprising: an organic-phase comprising a porous organic nanostructure comprised of an interpenetrating network having at least one dimension between 0.1 and 100 nm; and an inorganic phase at least partially distributed within the porosity of the organic phase. In a first aspect, the organic phase has a first band gap and the inorganic phase has a second band gap different from the first band gap. A method of producing an organic-inorganic energy harvesting device and a device therefrom comprising the hybrid organic-inorganic thin film is provided.

Abstract: A QLED device and manufacturing method thereof, a QLED display panel and a QLED display device are disclosed which improve the surface and internal structure of the quantum dot layer in the QLED devices. The method for manufacturing a QLED device includes forming a first electrode layer; forming a quantum dot layer on the first electrode layer; infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; and forming a second electrode layer on the quantum dot layer.

Abstract: Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A photovoltaic (PV) structure for generating electrical power from light, the structure including an enhancing layer for increasing the absorption of the light into the structure, the enhancing layer including: a wrinkled graphene layer configured to trap the light in the PV structure; and aluminum nanoparticles configured to scatter the light into the PV structure.

Abstract: A solar cell is provided comprising a substrate, a first insulating layer on a first surface of the substrate, the first insulating layer having a plurality of first openings that expose portions of the substrate, and a plurality of first electrodes electrically connected to the substrate through the first openings, wherein one or more of the first electrodes are configured so that a width of an upper portion located on the first insulating layer is wider than a width of a lower portion located in a corresponding first opening.

Abstract: A method for producing a carbon particle by a detonation method includes two steps. The first step is a step of disposing an explosive substance in the periphery of a raw material substance. The explosive substance has a detonation velocity of 6,300 m/s or more. The raw material substance contains an aromatic compound having not more than 2 nitro groups. The second step is a step of allowing the explosive substance to detonate.

Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).

Abstract: The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.

Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

Abstract: The present disclosure relates to an electromagnetic energy detector. The detector can include a substrate having a first refractive index; a metal layer; an absorber layer having a second refractive index and disposed between the substrate and the metal layer; a coupling structure to convert incident radiation to a surface plasma wave; additional conducting layers to provide for electrical contact to the electromagnetic energy detector, each conducting layer characterized by a conductivity and a refractive index; and a surface plasma wave (“SPW”) mode-confining layer having a third refractive index that is higher than the second refractive index disposed between the substrate and the metal layer.

Abstract: Provided is a battery including a positive electrode, a negative electrode, a separator, and an electrolyte that contains particles, a resin, and an electrolytic solution. The shape of the particles includes a plane, a plane rate of the particles is greater than 40% and equal to or less than 100%, and a refractive index of the particles is equal to or greater than 1.3 and less than 2.4.

Abstract: A method for producing a solar cell having good photoelectric conversion characteristics with high productivity, including the steps of: forming a first electrode on a first main surface of a semiconductor substrate; applying an insulator film precursor to cover at least part of the first electrode; temporarily curing the insulator film precursor; applying a conductive paste to at least the insulator film precursor; curing the conductive paste to form a second electrode; and completely curing the insulator film precursor to form an insulator film, the method in which the step of applying the conductive paste so as to be electrically insulated from the first electrode is performed after the step of temporarily curing the insulator film precursor and at least part of the steps of curing the conductive paste to form the second electrode and completely curing the insulator film precursor to form the insulator film are concurrently performed.

Abstract: An electrically conducting support for an electrochromic device and its manufacture; the electrically conducting support including, in this order: a substrate, an optional underlayer, a first inorganic layer on the optional underlayer or on the substrate, partially or completely structured in thickness with traversing holes or cavities, an electrode, made of metal grid with strands which exhibit, along their length, a rough central region between less rough lateral regions which are flush with the top surface, an electrically conducting coating made of inorganic material.

Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.

Abstract: The present disclosure provides a solar cell device comprising; a support substrate; a rear electrode layer on the substrate; a light absorption layer on the rear electrode layer; a front electrode layer on the light absorption layer; and wherein a first through-hole is defined in the rear electrode layer; wherein at least one protrusion is formed on an exposed top face of the substrate via the first through-hole.

Abstract: There is provided a thermoplastic resin film which is high in tear resistance. The thermoplastic resin film according to the present invention is provided with a plurality of first thermoplastic resin layers each containing a thermoplastic resin and a plurality of second thermoplastic resin layers each containing a thermoplastic resin, and has a multilayer structure in which the first and second thermoplastic resin layers are laminated in the thickness direction, the number of laminations in total of the first and second thermoplastic resin layers in the thickness direction is greater than or equal to 5, the ratio of the total thickness of the first thermoplastic resin layers to the total thickness of the second thermoplastic resin layers is greater than 1, the tensile modulus of elasticity of the respective first thermoplastic resin layers is less than or equal to 30 MPa, and the tensile modulus of elasticity of the respective first thermoplastic resin layers is greater than or equal to 280 MPa.

Abstract: Disclosed herein is a method of preparing organic films, including: (1) forming a first organic film including nanorods on a substrate using a first organic solution; (2) introducing a second organic solution at least into spaces between the nanorods of the first organic film; and (3) crystallizing the introduced second organic solution to form a second organic film. The method can provide an organic film having excellent properties in terms of crystallinity and topography.

Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: This method for manufacturing a germanium slow light waveguide includes: producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; then carrying out an operation of vapor phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; and before implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.

Abstract: A solar-pumped laser device includes: a light-guiding plate configured such that a fluorescence substance absorbing solar light and emitting fluorescence including a predetermined wavelength is dispersed in the light-guiding plate so as to bring the fluorescence to exit a predetermined surface; and an optical fiber disposed close to the predetermined surface, the optical fiber including: a core part in which a medium excitable by the fluorescence so as to emit a laser is dispersed; and a clad part that is formed by a material through which the fluorescence passes, is disposed around the core part, and has a smaller refractive index than a refractive index of the core part, wherein a light emitted by the medium is totally reflected by one end surface of the optical fiber, and is brought to pass through the other end surface of the optical fiber.

Abstract: The present disclosure relates to a cellulose-polymer composite solar cell that is substantially biodegradable and fabricated using environmentally friendly materials and methods. The polymer solar cell comprises an electrically conductive cellulose-polymer composite and an electrically semiconductive cellulose-polymer composite.

Abstract: A method of generating electricity utilizing silicon oxide is provided. The method includes irradiating a light to a photocell comprising a photovoltaic material which consists essentially of silicon oxide in a manner that causes the silicon oxide to generate the electricity in response to the irradiation of light, and correcting the electricity from the photovoltaic material.

Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

Abstract: A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on the cupric oxide layer, which serves as a seed layer, to yield a cupric oxide film, thereby obtaining a cupric oxide semiconductor. Also disclosed are a cupric oxide semiconductor thus prepared and a photovoltaic device including it.

Abstract: A roof integrated solar panel system includes a plurality of solar panel modules, each modules having a frame, a photovoltaic panel mounted to the frame, and a micro-inverter mounted to the frame to one side of the photovoltaic panel and accessible from the top of the frame. The solar panel modules are installable on a roof in aligned or staggered courses to form the solar panel system, and with the installed courses of modules together forming a water barrier protecting the roof.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).

Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

Abstract: A photovoltaic cell comprises a first electrode that includes a first transparent conductive substrate, a first layer having a plurality of first semiconductor nanofibers, and a second layer having a plurality of second semiconductor super-fine fibers, the first semiconductor nanofibers having an average diameter smaller than an average diameter of the second semiconductor super-fine fibers, a light absorbing material adsorbed to at least some of the first semiconductor nanofibers and second semiconductor super-fine fibers, a second electrode includes a second transparent conductive substrate, and electrolytes dispersed in the first and second layers.

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

Abstract: Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).

Abstract: A photo-conversion complex including at least one photo-conversion particle including a core nanocrystal, a shell nanocrystal surrounding the core nanocrystal, and a ligand bonded to the shell nanocrystal; and a protective film surrounding the photo-conversion particle.

Abstract: The invention provides novel materials, methods and designs to enable improved power conversion efficiencies of organic photovoltaics (OPVs). In particular, the invention provides novel materials and interlayers for polymer-based solar cells. Novel functional fullerene-based interlayers are disclosed that enable high efficiency devices in conjunction with numerous active layer and electrode materials.

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. In some embodiments, localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film, among other techniques. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

Abstract: Disclosed are a solar apparatus and a method of fabricating a solar apparatus. The solar apparatus according to the embodiment includes: a substrate; a back electrode layer on the substrate; a plurality of sub-electrodes making direct contact with the back electrode layer and extending in a first direction; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer.