Abstract: A plating apparatus for plating a substrate. The apparatus is provided with a plating unit, a substrate cleaning unit, a substrate transport mechanism, a post-treatment agent supplying section, a minor constituent managing section for managing minor constituents (an accelerator, a retarder and chlorine) of a plating liquid being used in the plating unit, an enclosure which houses therein a substrate treating section including the plating unit, the cleaning unit and the substrate transport mechanism, and a system controller for controlling the entire apparatus.

Abstract: An electroplating method not that is especially suited for the filling of vias is provided. In this method, a current is applied in a forward method for a set period of time and then reversed for a set period of time. This method utilizes a rest time either before or after or both before and after the reverse current period.

Abstract: A method for forming a metallization layer. A first layer is formed outwardly from a semiconductor substrate. Contact vias are formed through the first layer to the semiconductor substrate. A second layer is formed outwardly from the first layer. Portions of the second layer are selectively removed such that the remaining portion of the second layer defines the layout of the metallization layer and the contact vias. The first and second layers are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer. Further, metal ions deposited on the first layer during a positive duty cycle are removed from the first layer during a negative duty cycle. Finally, exposed portions of the first layer are selectively removed.

Abstract: The present invention provides plating solutions having either copper bis(perfluoroalkanesulfonyl) imides or copper tris(perfluoroalkanesulfonyl) methides and methods of electrochemically or chemically depositing copper interconnects using these plating solutions.

Abstract: Conductors for use in batteries, storage batteries, and solar collectors are produced by means of electrolysis. According to the invention, a method of this type for the production of an electrical conductor, which conductor comprises a copper-containing screen material, comprises the steps of using electrodeposition to deposit a copper skeleton on conductive parts of an electroforming matrix in an electrodeposition bath, and removing the deposited copper skeleton from the electroforming matrix, and if desired further growing of the skeleton, the screen material having a density of openings which lies in the range of 1-20,000/cm2 and allows of an open surface area which is larger than a defined minimum.

Abstract: A method of forming a copper interconnect, comprising forming an opening in a dielectric layer disposed on a substrate, forming a barrier layer over the opening, forming a seed layer over the metal layer, and forming a copper-noble metal alloy layer by electroplating and/or electroless deposition on the seed layer. The copper-noble metal alloy improves the electrical characteristics and reliability of the copper interconnect.

Abstract: The present invention generally relates to an electrolyte solution used to manufacture an electrolytic copper foil for a secondary battery electrode collector and a printed circuit, and based on a 1-liter electrolyte solution, the present invention contains: 0.5 to 40 mg of at least one sulfur compound selected from a disulfur compound, dialkylamino- T-oxomethyl- thioalkan sulfonic acid, and thioalkan sulfonic acid salt; 1 to 1000 mg of at least more than one kind of an organic compound selected from a group consisting of a poly aklylene glycol-type surfactant and low molecular gelatin; and 0.1 to 80 mg of chlorine ion.

Abstract: The present invention relates to a method for manufacturing a low roughness electrodeposited copper foil, and an electrodeposited copper foil manufactured thereby, and uses an electrolyte which basically consists of a sulfuric acid, a copper ion and a chloride ion is adapted with an additive which consists of a HEC (Hydroxyethyl Cellulose) of 0.05˜50 ppm, a SPS (bis(sodiumsulfopropyl)disulfide) of 0.05˜20 ppm, and a gelatin of 0.1˜100 ppm. The present invention is adapted to manufacture a low roughness electrodeposited copper foil using a conventional copper foil manufacture facility and the electrodeposited copper foil according to the present invention is adapted as a material for a copper clad laminate for a printed circuit substrate and an electrode material for a lithium ion battery.

Abstract: A metal plating bath and method of plating a metal on a substrate where the metal plating bath contains heteroatom organic compounds that prevent or inhibit the consumption of metal plating bath additives. The metal plating bath additives improve the brightness of plated metal as well as ductility, micro-throwing power and micro-throwing power of the plating bath. The addition of the additive consumption inhibiting heteroatom organic compounds improves the physical properties of the plated metal as well as the efficiency of the plating process. The heteroatom organic compounds may contain sulfur, oxygen or nitrogen heteroatoms.

Abstract: A method of forming a copper layer with increased electromigration resistance. A doped copper layer is formed by controlling the incorporation of a non-metallic dopant during copper electroplating.

Abstract: A metal plating bath and method of plating a metal on a substrate where the metal plating bath contains heteroatom organic compounds that prevent or inhibit the consumption of metal plating bath additives. The metal plating bath additives improve the brightness of plated metal as well as the ductility, micro-throwing power and macro-throwing power of the plating bath. The addition of the additive consumption inhibiting heteroatom organic compounds improves the physical properties of the plated metal as well as the efficiency of the plating process. The heteroatom organic compounds may contain sulfur, oxygen or nitrogen heteroatoms.

Abstract: A process for electrolytic copper plating, that is suitable for the formation of filled vias without compromising the brightness of the deposit is provided. In this process, copper electroplating is carried out in the presence of a transition metal oxide.

Abstract: A method of fabrication of copper interconnect by means of copper electroplating is disclosed. In the conventional method of fabricating copper interconnect for integrated circuits, critical steps such as deposition of copper seed layer and chemical mechanical polishing (CMP) are required. However in this invention, both the seed layer deposition and CMP are not required.

Abstract: A substrate treating apparatus provided with a plating unit, a bevel etching unit, a cassette stage on which a cassette for accommodating a wafer and a cassette for accommodating a dummy wafer are placed, and a transport robot for transporting the wafer or the dummy wafer among the cassettes, the plating unit and the bevel etching unit. The plating unit is capable of performing a copper plating process on the wafer and the dummy wafer, and the bevel etching unit is capable of etching a peripheral edge of the wafer and etching away a copper film formed on the dummy wafer.

Abstract: A metal plating bath and metal plating process that contains aldehyde compounds that prevent or reduce the consumption of metal plating bath additives. The metal plating baths provide for an efficient plating method because the plating process need not be interrupted to replenish the plating bath with additives. The metal plating baths may be employed to plate metals such as copper, gold, silver, palladium, platinum, cobalt, chromium, cadmium, bismuth, indium, rhodium, iridium, and ruthenium.

Abstract: A method of electroplating metal onto a low conductivity layer combines a potential or current reversal waveform with variation in the amplitude and duration of the applied potential or current pulse. The method includes, over time, varying the duration of the pulse and continuously decreasing the amplitude of both the cathodic and anodic portions of the waveform across the surface of the low conductivity layer as the deposition zone moves from the center of the surface of the low conductivity layer to the outside edge. By virtue of the ability to vary the amplitude and duration of the pulse, the method facilitates the filling of structures in the center of the low conductivity layer without overdepositing on the outside edge, thus ensuring a controlled deposition of material across the surface of the low conductivity layer.

Abstract: Methods of electrodeposition and electroless deposition are disclosed which afford super-filling of high-aspect ratio features on wafers by exposing wafers and electrolytic solutions in which they are immersed to conditions effective to induce reduction of metal ions in the electrolytic solution, preferably by a multiple step reduction, whereby electrodeposition of metal occurs at a bottom of each of the features until the features are substantially super-filled. Systems for performing such methods are described as are the resulting wafers produced thereby.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.

Abstract: The acid copper sulfate solutions used for electroplating copper circuitry in trenches and vias in IC dielectric material in the Damascene process are replaced with a type of plating system based on the use of highly complexing anions (e.g., pyrophosphate, cyanide, sulfamate, etc.) to provide an inherently high overvoltage that effectively suppresses runaway copper deposition. Such systems, requiring only one easily-controlled organic additive species to provide outstanding leveling, are more efficacous for bottom-up filling of Damascene trenches and vias than acid copper sulfate baths, which require a minimum of two organic additive species. The highly complexed baths produce fine-grained copper deposits that are typically much harder than large-grained acid sulfate copper deposits, and which exhibit stable mechanical properties that do not change with time, thereby minimizing “dishing” and giving more consistent CMP results.

Abstract: The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.

Abstract: Disclosed are copper electroplating solutions, methods for using the solutions and products formed by using such methods and solutions in which the solutions contain copper alkanesulfonate salts and free alkanesulfonic acids, wherein the free acid has a concentration from about 0.05 to about 2.50 M, and which are intended for the metallization of micron-sized dimensioned trenches or vias, through-holes and microvias.

Abstract: Method for selectively metallizing dielectric materials, the method includes: adhesively covering dielectric materials with an activating layer comprising a conductive material, which layer is subsequently structured by way of laser ablation; and using a subsequent laser treatment to structure the activating layer in such a way that discrete conductive structures are formed, which are subsequently metallized.

Abstract: Embodiments of the invention generally provide a method and apparatus for plating a metal on a substrate. The electrochemical plating system generally includes a plating cell having an anolyte compartment and a catholyte compartment, the anolyte compartment having an insoluble anode and an anolyte therein. The catholyte compartment generally includes a substrate support member and a catholyte therein. In addition, the plating cell generally includes an ion-exchange membrane disposed between the anolyte compartment and the catholyte compartment and a pump in fluid communication with the anolyte compartment, the pump configured to provide an anolyte to the anolyte compartment having a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method generally includes supplying an anolyte solution to an anolyte compartment disposed in a plating cell having an anolyte compartment and a catholyte compartment.

Abstract: The disclosed embodiments represent a method and apparatus for improving a lead-free electroplating process in the manufacture of semiconductor devices. To prevent the buildup of undesirable copper or bismuth on a conveyor belt and the associated tooling used to transport integrated circuit devices through an electroplating bath, a metal more noble than copper or bismuth, depending on which is used as a plating metal, is plated onto the surface of the conveyor belt and associated tooling.

Abstract: In the production of printed circuit boards it is required that organic protective coatings adhere tightly on the copper surfaces. Accordingly, matt layers of copper are to be preferred over lustrous coatings. The bath in accordance with the invention serves to deposit matt layers of copper and has the additional advantageous property that the layers may also be deposited with sufficient coating thickness in very narrow bore holes at average cathode current density. For this purpose the bath contains at least one polyglycerin compound selected from the group comprising poly(1,2,3-propantriol), poly(2,3-epoxy-1-propanol) and derivatives thereof.

Abstract: The present invention relates to a method for treating spent tin or tin/lead stripping solution used in the electronic industry, particularly in the manufacture of printed circuit boards or a lead frames. Said method comprises (i) electrolytically reducing copper ions in the solution to copper at a low temperature; (ii) electrolytically oxidizing Sn2+ and Pb2+ in the solution at a high temperature to form solid tin and lead oxides and hydroxides; (iii) separating solid tin and lead oxides and hydroxides from the solution; (iv) dissolving tin and lead oxides and hydroxides obtained in step (iii) in a strong alkali or acidic solution; and (v) electrolytically reducing the alkali or acidic solution obtained in step (iv) at a high temperature to recover metallic tin and lead. Also, the filtrate obtained in step (iii) above is useful for preparing fresh tin or tin/lead stripping solution.

Abstract: Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.

Abstract: A method of copper plating a small diameter hole which uses a copper sulfate plating solution containing copper sulfate, sulfuric acid, chlorine ions, a sulfur compound, and a surfactant to copper plate the inside of a small diameter hole of an object being plated having a small diameter hole by the PPR method, comprising performing reverse electrolysis by a range of current density of 0.1 to 1 A/dm2 to peel off a sulfur compound near the opening of the small diameter hole in the sulfur compound adsorbed to the object being plated so as to keep the polarization resistance in the small diameter hole at the time of regular electrolysis lower than that near the opening of the small diameter hole and form a copper plating film of a uniform thickness inside the small diameter hole. Since a high precision, large capacity pulse power supply is not required, the capital costs can be reduced and the inside of the small diameter hole can be plated well.

Abstract: Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.

Abstract: An electrochemical fabrication process and apparatus are provided that can form three-dimensional multi-layer structures using pyrophosphate copper plating solutions that contain citrate salts, selenium oxide, and/or excess ammonium salts. In some embodiments the citrate salts are provided in concentrations that yield improved anode dissolution, reduced formation of pinholes on the surface of deposits, reduced likelihood of shorting between anode and cathode during deposition processes, and reduced plating voltage throughout the period of deposition. A preferred citrate salt is ammonium citrate in concentrations ranging from somewhat more that about 10 g/L for 10 mA/cm2 current density to as high as 200 g/L or more for a current density as high as 40 mA/cm. In some embodiments deposits having enhanced ductility and/or reduced tendency to crack are provided.

Abstract: A method and apparatus for plating metals, such as copper, on a substrate. The apparatus generally includes a plating cell having an anolyte compartment containing an anolyte and a catolyte compartment containing a catolyte, an anode disposed in the anolyte compartment, and a dialysis membrane disposed between the anolyte compartment and the catolyte compartment, wherein the membrane screens molecules by molecular weight. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell from the electrolyte solution, and preventing the passage of additives from a catolyte compartment to an anolyte compartment with an anode disposed therein by providing a dialysis membrane between the anolyte compartment and catolyte compartment that is selective to molecule size.

Abstract: The present invention generally provides an apparatus and method for neutralizing an acid in a plating solution. The apparatus generally includes a plating cell having an anolyte compartment containing an anolyte and a catolyte compartment containing a catolyte, wherein the anolyte compartment has an anolyte inlet and an anolyte drain and the catolyte compartment has a catolyte inlet and a catolyte drain, and a cell membrane disposed in the cell between the anolyte compartment and the catolyte compartment, wherein the membrane is selective to hydrogen ions and copper ions. The apparatus further includes a catolyte storage unit in fluid communication with the catolyte inlet and an electrochemical device in fluid communication with the catolyte chamber, the electrochemical device being configured to receive a portion of aged catolyte solution and correct a catolyte concentration.

Abstract: A metal transfer sheet which is so low in peel-strength as to be transferred to an object to be transferred with ease and reliability; a producing method thereof; and a ceramic condenser producing method for producing a reliable, compact, thin-layer ceramic condenser with improved production efficiency by transferring a metal layer to the ceramic condenser by using the metal transfer sheet. After a first metal layer is formed on a carrier film in a sputtering or an electrolytic plating method, the member thus formed is dipped in plating solution and voltage is applied in such a way that the first metal layer side is anode, to form a passive film. Sequentially, with the polarity reversed, voltage is applied in such a way that the passive film side is cathode, to form the second metal layer. After this manner, a metal transfer sheet in which the first metal layer and the second metal layer are laminated through the passive film interposed therebetween is obtained.

Abstract: Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Abstract: Embodiments of the invention generally provide a waveform to be applied to a seed layer prior to initiating plating operations, wherein the waveform is configured to remove organic contaminants from the seed layer. The application of the waveform generally includes applying a plurality of anodic pulses to the seed layer prior to an electrochemical deposition process and subsequent to the seed layer contacting a plating solution, and applying a cathodic pulse to the seed layer immediately following each of the plurality of anodic pulses. The waveform is generally provided by a power supply in electrical communication with a system controller configured to supply controlling signals to the power supply.

Abstract: A via filling method that provides superior filling properties and superior planarization of the deposited metal layer is provided. This is achieved by a method having a F/R ratio, the ratio of the electric current densities between the forward electrolysis and the reverse electrolysis, is in the range of 1/1 to 1/10 in a PPR electric current method applied with a cycle wherein the forward electrolysis interval is from 1 to 50 msec and the reverse electrolysis interval is from 0.2 to 5 msec.

Abstract: The invention consists of a method for producing an adherent copper coating on a zinc or zinc alloy article without the use of cyanide as a component of the process. The zinc or zinc alloy article is first immersed in an aqueous nickel pyrophosphate solution and is then electroplated with a copper pyrophosphate solution. The method produces an adherent copper coating on the zinc or zinc alloy, which can be deformed without any loss of the copper coating.

Abstract: A method is disclosed for the metallization of optical fibers with improved adhesion while using a shorter process cycle.

Abstract: The various embodiments of coaxial capacitors are self-aligned and formed in a via, including blind vias, buried vias and plated through holes. The coaxial capacitors are adapted to utilize the plating of a plated via as a first electrode. The dielectric layer is formed to overlie the first electrode while leaving a portion of the via unfilled. A second electrode is formed in the portion of the via left unfilled by the dielectric layer. Such coaxial capacitors are suited for use in decoupling and power dampening applications to reduce signal and power noise and/or reduce power overshoot and droop in electronic devices. For such applications, it is generally expected that a plurality of coaxial capacitors, often numbering in the thousands, will be coupled in parallel in order to achieve the desired level of capacitance.

Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Abstract: A method and apparatus for plating metal onto a substrate including positioning an anode spacer including a anode surface and a substrate contact surface with the substrate contact surface immediate a deposition surface of a substrate. The apparatus generally includes a plating cell configured to contain a plating solution therein, an anode disposed in the plating solution, and an anode spacer positioned in the plating cell, the anode spacer having an anode surface, and a substrate contact surface positioned immediate a deposition surface of the substrate, the anode spacer configured to communicated the plating solution therethrough. The method generally includes positioning a substrate in a plating cell, positioning an anode spacer immediate a deposition surface of the substrate, and flowing a plating solution through the anode spacer to plate a metal onto the deposition surface.

Abstract: The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Abstract: An electroplating solution comprising copper ions and a complexing agent for the copper ions and has a pH in the range of 4 to 10. The electroplating solution of the present invention makes it possible to fill trenches or via holes on silicon wafers for providing copper wiring with copper in a defect-free manner by preventing the seed layer from dissolving in the plating solution.

Abstract: A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble &bgr;-naphtholethoxylate compound having the formula wherein n is an integer from 10 to 24, one selected from the group consisting of a disulfide having the formula XO3S(CH2)3SS(CH2)3SOX3 and a water-soluble mercaptopropanesulfonic acid or salt thereof having the formula HS(CH2)3SO3X, where X is sodium, potassium, or hydrogen, a water-soluble polyethylene glycol having a molecular weight ranging from about 4,600 to about 10,000, and a water-soluble polyvinylpyrrolidone having a molecular weight ranging from about 10,000 to about 1,300,000.

Abstract: The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.

Abstract: The present invention is directed to provision of a surface-treated copper foil exhibiting a maximum effect of a silane coupling agent which is adsorbed onto the copper foil and is employed in order to enhance adhesion between the copper foil and a substrate during manufacture of printed wiring boards. The invention is also directed to provision of a method for producing such a copper foil. To attain these goals, a surface-treated copper foil for producing printed wiring boards is provided, wherein an anti-corrosion treatment comprises forming a zinc layer or a zinc alloy layer on a surface of the copper foil and forming an electrodeposited chromate layer on the zinc or zinc alloy layer; forming a silane-coupling-agent-adsorbed layer on the electrodeposited chromate layer without causing the electrodeposited chromate layer of the nodular-treated surface to dry; and drying.

Abstract: Embodiments of the invention provide a method of plating a copper film on a substrate in an electrochemical plating apparatus. The method includes positioning a substrate in an electrolyte solution, applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface, rotating the, substrate at a rotational speed of between about 20 rpm and about 50 rpm, and plating a copper film having a sheet resistance of less than about 16.5×10−2 Ohms/cm2.

Abstract: A composite for use in forming a multi-layer printed circuit board, comprised of an INVAR® sheet having a thickness of between 0.5 mil and 5 mil; and a layer of electrodeposited copper on at least one side thereof. The copper has a thickness of between 1&mgr; and 50&mgr;, wherein the composite has a thermal coefficient of expansion (TCE) of about 2.8 to 6.0 ppm at temperatures between 0° F. and 200° F.

Abstract: A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.

Abstract: A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.