Abstract: A method of manufacturing a magnetic recording medium is provided. The method includes: forming a magnetic layer 2 on a non-magnetic substrate 1; forming a mask layer 3 on the magnetic layer 2; forming a resist layer 4 which is patterned into a predetermined shape on the mask layer 3; patterning the mask layer 3 into a shape corresponding to the resist layer 4 using the resist layer 4; patterning the magnetic layer 2 into a shape corresponding to the mask layer 3 using the patterned mask layer 3; and removing the mask layer 3 that remains on the magnetic layer 2 by reactive plasma etching. The reactive plasma etching is performed under an atmosphere containing an organic compound having at least one kind or plural kinds of functional groups selected from a hydroxyl group, a carbonyl group, a hydroxy carbonyl group, an alkoxy group, and an ether group.

Abstract: Selective etching techniques are used to manufacture a basic filtration element, which can then be used as a basis for constructing various devices for different applications. In this process, sheets of etchable material are etched from one or both sides of that sheet to form channels in a premasked pattern, which controls the minimum opening of the filtration element. The desired channel opening is only limited by the capability of the photochemical etching system being used. Alternatively, a filter element may be made by rolling or extruding a first sheet to form a plurality of recessed areas bordered by lands, selectively etching or punching through the recessed pattern areas, and bonding a second sheet having a plurality of etched or punched through areas to the first sheet, and, aligning the etched through areas to the second sheet with the recessed areas of the first sheet.

Abstract: A method for manufacturing a Z-directed component for insertion into a mounting hole in a printed circuit board according to one example embodiment includes punching a plurality of segments out of at least one sheet of substrate material to form a plurality of layers of the Z-directed component. A channel is formed through the substrate material either before or after the segments are punched. At least one of the formed layers includes at least a portion of the channel. A conductive material is applied to at least one surface of at least one of the formed layers. A stack of the formed layers is combined to form the Z-directed component.

Abstract: A method includes forming a chemical guide layer above a process layer. A template having a plurality of elements is formed above the process layer. The chemical guide layer is disposed on at least portions of the process layer disposed between adjacent elements of the template. A directed self-assembly layer is formed over the chemical guide layer. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer as an etch mask.

Abstract: A method and system for fabricating a magnetic transducer is described. The transducer has device and field regions, and a magnetoresistive stack. Hard mask layer and wet-etchable layers are provided on the magnetoresistive stack and hard mask layer, respectively. A hard mask and a wet-etchable mask are formed from the hard mask and the wet-etchable layers, respectively. The hard and wet-etchable masks each includes a sensor portion and a line frame. The sensor portion covers part of the magnetoresistive stack corresponding to a magnetoresistive structure. The line frame covers a part of the magnetoresistive stack in the device region. The magnetoresistive structure is defined in a track width direction. Hard bias material(s) are then provided. Part of the hard bias material(s) is adjacent to the magnetoresistive structure in the track width direction. The wet-etchable sensor portion and line frame, and hard bias material(s) thereon, are removed.

Abstract: Rolling mask lithography may be performed to expose selected portions of a radiation sensitive layer to a radiation pattern that leaves selected portions of a top surface of the radiation sensitive layer resistant to development by a developer and non-selected portions susceptible to development by the developer. A structure of the selected portions is then rendered resistant to an etch process. The radiation sensitive layer is then flood exposed to a second radiation that leaves the radiation sensitive layer resistant to development by the developer. The radiation sensitive layer is then selectively etched using the etch-resistant selected portions as an etch mask.

Abstract: A hydrophilic laminate, including: a substrate made of a resin; and a hydrophilic resin layer on the substrate made of a resin, wherein the hydrophilic resin layer comprises micro convex portions or micro concave portions in a surface thereof, and wherein a pure water contact angle of the surface of the hydrophilic resin layer is less than 40°.

Abstract: Methods for fabricating templates for nanoelement assembly and methods for fluid-guided assembly of nanoelements are provided. Templates are fabricated by plasma modification of surface hydrophilicity and production of a network of hydrophobic trenches having a hydrophilic bottom surface. Single-walled carbon nanotubes (SWNT) can be assembled into stable films, ribbons, and wires of nanoscale thickness and nanoscale or microscale width and length. The nanofilm assemblies prepared according to the invention are highly conductive and can be used in the fabrication of a wide variety of microscale and nanoscale electronic devices.

Abstract: A method of manufacturing a press plate for applying a surface structure onto a floor panel, wherein the press plate includes a press plate surface, comprises the following steps: first fine projections are created on the press plate surface, then the resulting fine projections are covered by a surface treatment resistant material, and subsequently the press plate surface including the resistant material is submitted to a surface treatment.

Abstract: A method and apparatus for monitoring a target layer in a plasma process having a photoresist layer is provided. The method is useful in removing noise associated with the photoresist layer, and is particularly useful when signals associated with the target layer is weak, such as when detecting an endpoint for a photomask etching process.

Abstract: A first metal film is formed on a piezoelectric substrate surface. A pattern of openings forming a first resist mask is formed in the first metal film. Portions of the metal film are removed by etching. The substrate is brought into contact with a first etching solution to remove substrate material to shape an outer surface. After, openings in the first metal film are filled in with a second metal film. The substrate is shaped into a first plurality of piezoelectric resonators using a second etching solution. Rough frequency adjustment is conducted by etching side surfaces of the substrate in increments and cutting a piezoelectric resonator from the substrate. The rough frequency adjustment continues until a measured oscillation frequency is within a predetermined frequency range. Electrode patterns then are formed for each one of the second plurality of piezoelectric resonators.

Abstract: A method is described for manufacturing a component having a through-connection. The method includes providing a substrate; forming a trench structure in the substrate, a substrate area which is completely surrounded by the trench structure being produced; forming a closing layer for closing off the trench structure, a cavity girded by the closing layer being formed in the area of the trench structure; removing substrate material from the substrate area surrounded by the closed-off trench structure; and at least partially filling the substrate area surrounded by the closed-off trench structure with a metallic material. A component having a through-connection is also described.

Abstract: This invention relates to methods and apparatuses for creating a textured press plate by spreading ink over the press plate using a heater. Some embodiments provide a method that includes: (a) dispensing radiation-curable ink onto a press plate; (b) spreading the ink over the press plate by heating the ink; and (c) irradiating the ink so that the ink is at least partially cured and/or fixed, and/or such that the spreading of the ink is at least partially slowed and/or stopped. In some embodiments, the irradiating the ink occurs after the spreading the ink. In other embodiments, the ink acts to resist a chemical solution, and the method further includes etching a surface portion of the press plate by exposing the portion to a chemical solution, where the surface portion includes the ink, and where the etching the surface portion occurs after the irradiating the ink.

Abstract: Capsules and similar objects are made from materials having diamond (sp3) lattice structures, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The capsules generally include a hollow shell made of a diamond material that defines an interior region that may be empty or that may contain a fluid or solid material. Some of the capsules include access ports that can be used to fill the capsule with a fluid. Capsules and similar structures can be manufactured by growing diamond on suitably shaped substrates. In some of these methods, diamond shell sections are grown on substrates, then joined together. In other methods, a nearly complete diamond shell is grown around a form substrate, and the substrate can be removed through a relatively small opening in the shell.

Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

Abstract: A method of making an article 2 comprising an ultra-thin sheet 26 of material secured at lateral regions to a support member, the method comprises laying the ultra-thin sheet on a substrate 20, forming the support member on the lateral regions of the ultra-thin sheet such that the lateral regions of the ultra-thin sheet are sandwiched between the support member and the substrate and adhered to the support member, and removing the substrate by vaporisation or by a dissolution step using a solvent, to leave the article. The ultra-thin sheet is supported around its periphery and has a central region in which the ultra-thin sheet is free from contact with any other material.

Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

Abstract: A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

Abstract: The invention is directed to a nanosieve composite membrane, a method for preparing a nanosieve composite membrane, a roll-to-roll apparatus for carrying out the method, and a method for separating a feed flow with particulate matter. The nanosieve composite of the invention comprises an inorganic nanosieve layer supported on a porous polymer membrane substrate and a metallic adhesion layer or underlayer between the inorganic nanosieve layer and the polymer substrate, wherein said polymer membrane comprises an inorganic coating such that the polymeric support is sandwiched between the inorganic coating and the inorganic sieve layer, and wherein said inorganic nanosieve layer has an average pore diameter as determined by scanning electron microscopy of 200 nm or less.

Abstract: The present invention relates to a cliché for offset printing and a method of manufacturing the same, and the cliché for offset printing according to the present invention comprises: a groove pattern, wherein a depth of at least a partial region of the groove pattern is different from a depth of a residual region. The present invention may comprise a double etching process when a cliché for offset printing is manufactured to control a bottom touch phenomenon that is a problem exhibited when a known wide line width is implemented, thus manufacturing the cliché for offset printing having various line widths and etching depths.

Abstract: A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 ? and about 5,500 ? on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

Abstract: A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract: A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region.

Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.

Abstract: A method of taper-etching a layer to be etched that is made of a dielectric material and has a top surface. The method includes the steps of: forming an etching mask with an opening on the top surface of the layer to be etched; and taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces intersecting at a predetermined angle is formed in the layer to be etched. The step of taper-etching employs an etching gas containing a first gas contributing to the etching of the layer to be etched and a second gas contributing to the deposition of a sidewall protective film, and changes, during the step, the ratio of the flow rate of the second gas to the flow rate of the first gas so that the ratio increases.

Abstract: A method for processing a target object includes arranging a first electrode and a second electrode for supporting the target object in parallel to each other in a processing chamber and processing the target object supported by the second electrode by using a plasma of a processing gas supplied into the processing chamber, the plasma being generated between the first electrode and the second electrode by applying a high frequency power between the first electrode and the second electrode. The target object includes an organic film and a photoresist layer formed on the organic film. The processing gas contains H2 gas, and the organic film is etched by a plasma containing H2 by using the photoresist layer as a mask while applying a negative DC voltage to the first electrode.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: The present invention is mainly intended to provide a sealing member which can be easily manufactured and which is capable of sealing with high accuracy and a method of manufacturing the sealing member, wherein the sealing member is a metallic sealing member that is arranged so as to be interposed between a first surface and a second surface which are facing each other. The sealing member is provided with a first protrusion protruded toward the first surface and a pair of second protrusions protruded toward the second surface, wherein the first protrusion is arranged between the paired second protrusions and distal end portions of the first protrusion and second protrusions are mutually parallel flat surfaces.

Abstract: An approach is provided for manufacturing a nanostructure. A first thin film including a first block copolymer is formed on a substrate. A guide pattern is formed on the first thin film. A second thin film including a second block copolymer is formed between portions of the guide pattern. The second thin film is cured. The first block copolymer is a cylinder-type and the second block copolymer is a lamella-type.

Abstract: The invention includes methods of forming reticles configured for imprint lithography, methods of forming capacitor container openings, and methods in which capacitor container openings are incorporated into DRAM arrays. An exemplary method of forming a reticle includes formation of a radiation-imageable layer over a material. A lattice pattern is then formed within the radiation-imageable layer, with the lattice pattern defining a plurality of islands of the radiation-imageable layer. The lattice-patterned radiation-imageable layer is utilized as a mask while subjecting the material under the lattice-patterned layer to an etch which transfers the lattice pattern into the material. The etch forms a plurality of pillars which extend only partially into the material, with the pillars being spaced from one another by gaps. The gaps are subsequently narrowed with a second material which only partially fills the gaps.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

Abstract: A nozzle plate includes: a nozzle plate main body made of metal, the nozzle plate main body having nozzle rows formed of nozzles arranged in parallel and penetrating the nozzle plate main body in a thickness direction, wherein at the outer edge of the nozzles on a droplet discharge surface of the nozzle plate main body, a water-repellent film is provided, and primer treatment is performed on at least part of the periphery of the droplet discharge surface of the nozzle plate main body, the periphery outside the water-repellent film.

Abstract: Technologies are generally described for a graphene membrane with uniformly-sized nanoscale pores that may be prepared at a desired size using colloidal lithography. A graphene monolayer may be coated with colloidal nanoparticles using self-assembly, followed by off-axis metal layer deposition, for example. The metal layer may form on the colloidal nanoparticles and on portions of the graphene not shadowed by the nanoparticles. The nanoparticles may be removed to leave a negative metal mask that exposes the underlying graphene through holes left by the removed nanospheres. The bare graphene may be etched to create pores using an oxygen plasma or similar material, while leaving metal-masked regions intact. Pore size may be controlled according to size of colloidal nanoparticles and angle of metal deposition relative to the substrate. The process may result in a dense, hexagonally packed array of uniform holes in graphene for use as a membrane, especially in liquid separations.

Abstract: A method includes forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template. A directed self-assembly layer is formed over the exposed portions. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer. Non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer.

Abstract: A foam acid glass etching media including a solvent; a source of fluorine; and a nonionic surfactant. The foam acid is in the form of a colloidal dispersion with a gas dispersed in a continuous liquid phase. The media is useful in etching or polishing glass sheets in a batch or continuous process. Described is a method for etching or polishing glass by providing a glass having at least one major surface; and contacting the at least one major surface with a foam acid.

Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.

Abstract: Embodiments of the present disclosure provide a method for selective removal of atoms from a substrate. Such a method comprises forming a patterned mask over at least a portion of the surface of the substrate to form a masked portion and an unmasked portion of the surface. In an embodiment, the method comprises exposing the surface to low energy light ions. In a related embodiment the low energy light ions selectively remove atoms from the unmasked portion of the substrate. In some embodiments, the method further comprises removing the mask. In another embodiment, the present disclosure relates to a method of creating a plurality of magnetic domains on a magnetically susceptible substrate. In an embodiment, the present disclosure pertains to a method of forming a magnetic medium.

Abstract: A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions.

Abstract: A process is described to perform lift-off of a metal layer. A spray is applied to a patterned surface coated with the metal layer. An incidence angle and pressure of the spray are sufficient to separate the metal layer from a substance coated with the metal without separating the substance from an underlying substrate.

Abstract: A method for making a film of core-shell nanoparticles generally uniformly arranged on a substrate uses atomic layer deposition (ALD) to form the shells. The nanoparticle cores are placed in a solution containing a polymer having an end group for attachment to the cores. The solution is then applied to a substrate and allowed to dry, resulting in the nanoparticle cores being uniformly arranged by the attached polymer chains. ALD is then used to grow the shell material on the cores, using two precursors for the shell material that are non-reactive with the polymer. The polymer chains also form between the cores and the substrate surface, so the ALD forms shell material completely surrounding the cores. The uniformly arranged core-shell nanoparticles can be used as an etch mask to etch the substrate.

Abstract: A method of manufacturing an endoluminal implantable surface, stent, or graft includes the steps of providing an endoluminal implantable surface, stent, or graft having an inner wall surface, an outer wall surface, and a wall thickness and forming a pattern design into the endoluminal implantable surface, stent, or graft. At least one groove is created in the inner surface of the intravascular stent by applying a laser machining method to the inner surface.

Abstract: A method of chemically milling a workpiece includes the step of depositing a masking material on portions of a workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. The masking material is deposited using a masking printer that moves in three dimensions to deposit the masking material onto the workpiece. The method also includes the step of chemically removing material from unmasked desired milling areas of the workpiece.

Abstract: A method of fabricating an imprint mold is disclosed. The method includes: forming a first photo resist pattern on a substrate; etching the substrate using the first photo resist pattern as an etch mask to form a first pattern in the substrate; ashing the first photo resist pattern to form a second photo resist pattern; and etching the substrate using the second photo resist pattern to form a second pattern derived from the substrate and a third pattern derived from the first pattern.

Abstract: A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: A method of fabricating a substrate-HSQ resist material in which the substrate is selected from germanium (Ge) or gallium arsenide (GaAs) comprises the steps of pretreating a surface of the substrate to provide halogen termination of the substrate surface such that surface oxide is removed, and applying a HSQ resist to the surface. Removal of surface oxide allows the use of aqueous HSQ developers without causing damage to the surface. Also disclosed is a substrate-HSQ resist material, in which the substrate is selected from germanium or gallium arsenide, suitable for use in nanodevice fabrication and comprising a germanium or gallium arsenide substrate having a surface bearing a high resolution HSQ resist film or layer, in which the substrate has a halogen terminated surface.

Abstract: A thin film forming apparatus and a thin film forming method using the same are disclosed. In one aspect, the thin film forming apparatus comprises a mask that includes a blocking portion and an opening. It also includes an etching source that jets an etching gas through the opening of the mask to etch a thin film according to a pattern. The mask includes a gas blower for blowing a gas around the opening so that the etching gas does not penetrate into a thin film area corresponding to the block portion. When the thin film forming apparatus is used, a normal residual area of a thin film may be safely preserved and patterning may be accurately performed. Thus, the quality of a product manufactured by using the thin film forming apparatus may be improved.

Abstract: A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer. A Bulk Co-Polymer (BCP) coating is dispensed in the trench, wherein the BCP coating includes Poly-Styrele (PS) and Poly Methyl Metha Crylate (PMMA). An annealing is performed on the BCP coating to form a plurality of PS strips and a plurality of PMMA strips allocated in an alternating layout. The PMMA strips are selectively etched, with the PS strips left in the trench.