Abstract: Disclosed is a semiconductor transistor for enhancing performance of PMOS and NMOS transistors, particularly current driving performance, while reducing a narrow width effect. A narrow width MOS transistor includes: a channel of which width is W0 and length is L0; an active area including source and drain areas formed at both sides with the channel as a center; a gate insulating layer formed on the channel; a gate conductor formed on the gate insulating layer and intersecting the active area; a first additional active area of width is larger than that W0 of the channel as an active area added to the source area; and a second additional active area of width is larger than that W0 of the channel as an active area added to the drain area. When the structure of the transistor having the additional active areas is applied to NMOS and PMOS transistors, a driving current is represented as 107.27% and 103.31%, respectively. Accordingly, the driving currents of both PMOS and NMOS transistors are enhanced.

Abstract: In a semiconductor substrate of a first conductivity type, a first well region of the first conductivity type, second well regions of a second conductivity type, and a third well region of the second conductivity type are formed. The second well regions are formed in the semiconductor substrate excluding the region where the first well region has been formed. The third well region is formed under the first and second well regions in the semiconductor substrate in such a manner that a part of the third well region under the first well region is removed, thereby connecting the second well regions to one another electrically.

Abstract: Basic logic gates are formed in a small area, and a highly integrated and microscopic structure is provided. In an nMOSFET and a pMOSFET, gate electrodes are formed facing each other and sandwiching a semiconductor region via gate insulting layers. Respective drain regions of the nMOSFET and the pMOSFET are connected to each other. A high potential is applied to a source region of the pMOSFET while an intermediate potential between the high and a low potential is applied to a source region of the nMOSFET. As a result, a NAND gate is provided. The intermediate potential between the high and the low potential is applied to the source region of the pMOSFET. The low potential is applied to the source region of the nMOSFET. As a result, a NOR gate is provided.

Abstract: Systems and arrangements to interconnect cells and structures within cells of an integrated circuit to enhance cell density. Embodiments comprise an adjusted polysilicon gate pitch to metal wire pitch relationship to improve area scalars while increasing ACLV tolerance with a fixed polysilicon gate pitch. In some embodiments, the wire pitch for at least one metallization layer is adjusted to match the pitch for the polysilicon gate. In one embodiment, the next to the lowest metallization layer running in the same orientation as the polysilicon gate, utilized to access the input or output of the interconnected cell structures is relaxed to match the minimum contacted gate pitch and the metal is aligned above each polysilicon gate. In another embodiment, the polysilicon gate pitch may be relaxed to attain a smaller lowest common multiple with the wire pitch for an integrated circuit to reduce the minimum step off.

Abstract: A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.

Abstract: A semiconductor integrated circuit includes an n-channel MOS transistor and a p-channel MOS transistor formed respectively in first and second device regions of a substrate, the n-channel MOS transistor including a first gate electrode carrying sidewall insulation films on respective sidewall surfaces thereof, the p-channel MOS transistor including a second gate electrode carrying sidewall insulation films on respective sidewall surfaces thereof, wherein there is provided a stressor film on the substrate over the first and second device regions such that the stressor film covers the first gate electrode including the sidewall insulation films thereof and the second gate electrode including the sidewall insulation films thereof, wherein the stressor film has a decreased film thickness in the second device region at least in the vicinity of a base part of the second gate electrode.

Abstract: A semiconductor device includes a plurality of repeatable circuit cells connectable to one or more conductors providing at least electrical connection to the circuit cells and/or electrical connection between one or more circuit elements in the cells. Each of the circuit cells are configured having gates and active regions forming a grating, wherein, for a given active layer in the device, a width of each active region is substantially the same relative to one another, a spacing between any two adjacent active regions is substantially the same, a width of each gate is substantially the same relative to one another, and a spacing between any two adjacent gates is substantially the same.

Abstract: A semiconductor layout includes a p substrate, a first semiconductor cell formed over the p substrate, and a second semiconductor cell formed over the p substrate adjacent to the first semiconductor cell. A total height of the first semiconductor cell and the second semiconductor cell is twice a height of a standard semiconductor cell, and the height of the second semiconductor cell is adjusted according to the height of the first semiconductor cell.

Abstract: According to the present invention, there is provided a semiconductor device having: first and second fins formed on a semiconductor substrate to oppose each other, and made of a semiconductor layer; an active region which is formed on the semiconductor substrate so as to be connected to the first and second fins, and supplies a predetermined voltage to the first and second fins; and a gate electrode formed on an insulating film formed on the semiconductor substrate, in a position separated from the active region by a predetermined spacing, so as to cross the first and second fins, wherein in the active region, a predetermined portion between a first portion connected to the first fin and a second portion connected to the second fin is removed.

Abstract: A semiconductor device of the generation with the minimum processing dimensions of 90 nm, or later, wherein variation of processing dimensions of gate electrodes in a logic block and a power source noise are suppressed; wherein a gate electrode formed to have a comb-shaped pattern is formed on a normal cell region, a dummy gate electrode formed to have a comb-shaped pattern is formed on a vacant region, a wiring for applying a predetermined voltage is connected respectively to at least a part of the dummy gate and the semiconductor substrate (source drain regions), and an electrostatic capacity between the part of the dummy gate electrode and the semiconductor substrate constitutes a decoupling capacitor of the power source.

Abstract: A gate circuit has a complementary transistor structure comprising transistors of different conductivity types connected in series respectively between two power source terminals and an output terminal, sharing a gate connected to an input terminal, the transistors of different conductivity types each comprising plural transistors, and the plural transistors being connected in series between each of the two power source terminal and the output terminal. The gate is provided to extend like a line, plural diffusion layers are provided along the direction of the line in which the gate extends, and a conduction channel of each of the plural transistors connected in series between the power source terminals and the output terminal is formed in the diffusion layers.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

Abstract: A method of forming a memory cell having a trench capacitor and a vertical transistor in a semiconductor substrate includes a step of providing a bonded semiconductor wafer having a lower substrate with an [010] axis parallel to a first wafer axis and an upper semiconductor layer having an [010] axis oriented at forty-five degrees with respect to the wafer axis, the two being connected by a layer of bonding insulator; etching a trench through the upper layer and lower substrate; enlarging the lower portion of the trench and converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to alignment errors between the trench lithography and the active area lithography is reduced. An alternative version employs a bonded semiconductor wafer having a lower substrate formed from a (111) crystal structure and the same upper portion.

Abstract: A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.

Abstract: In a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions have first and second ends thereof. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A conductive pattern is provided to extend in the first direction across the first conductive type active region and the second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: In a double-gate MOS transistor, a substrate, an insulating layer, and a semiconductor layer are formed or laminated in that order, an opening extending to the insulating layer is formed in the semiconductor layer while leaving an island-shaped region, the island-shaped region including a semiconductor crystal layer having a predetermined length and height and a predetermined shape of horizontal section, the semiconductor crystal layer including P-type or N-type source region, channel region, and drain region, in that order, formed therein, a source electrode, gate electrodes, and a drain electrode are provided in contact with side surfaces of the respective regions, and the gate electrodes are provided in contact with the side surfaces of the channel region.

Abstract: A semiconductor device includes a plurality of repeatable circuit cells connectable to one or more conductors providing at least electrical connection to the circuit cells and/or electrical connection between one or more circuit elements in the cells. Each of the circuit cells are configured having gates and active regions forming a grating, wherein, for a given active layer in the device, a width of each active region is substantially the same relative to one another, a spacing between any two adjacent active regions is substantially the same, a width of each gate is substantially the same relative to one another, and a spacing between any two adjacent gates is substantially the same.

Abstract: An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the active device in a manner to reduce the amount of voltage required for triggering the ESD protection structure.

Abstract: A semiconductor device includes a plurality of repeatable circuit cells connectable to one or more conductors providing at least electrical connection to the circuit cells and/or electrical connection between one or more circuit elements in the cells. Each of the circuit cells are configured having gates and active regions forming a grating, wherein, for a given active layer in the device, a width of each active region is substantially the same relative to one another, a spacing between any two adjacent active regions is substantially the same, a width of each gate is substantially the same relative to one another, and a spacing between any two adjacent gates is substantially the same.

Abstract: A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n<m) wiring layers. It becomes possible to shorten a development period and reduce a development cost when a gate array type semiconductor integrated circuit device becomes large in scale.

Abstract: A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

Abstract: A gate array integrated circuit forming part of a semiconductor integrated circuit includes a basic layer of a unit cell in which a PMOS and an NMOS transistor are connected with a poly-silicon strip. The poly-silicon strip has gate terminal regions formed to laterally extend to allow two or more contact pads or through-holes to be disposed in each gate terminal region. It is thus possible to improve wiring efficiency and also micro-miniaturization and yield of the gate array integrated circuit. A layout method for a gate array integrated circuit is also provided.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length-by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

Abstract: A standard cell is read from a library and automatic layout wiring is performed, thereby configuring a circuit. Next, each cell column in the configured circuit is searched for an empty region. In the empty region in the cell column searched for, a spacer cell or a filler cell is placed. At this time, using the spacer cell or filler cell, the well potential of the standard cells in the cell column is fixed.

Abstract: An SRAM device includes an SRAM cell in a deep NWELL region in a substrate. PWELL regions in the SRAM cell occupy less than about 65% of the cell area of the SRAM cell. A ratio of a longer side of a cell area of the SRAM cell to a shorter side of the SRAM cell is larger than about 1.8. A total area of the active regions in the plurality of NMOS transistors in the SRAM cell occupies less than about 25% of the SRAM cell area. A ratio of the channel width of a pull up transistor in the SRAM cell to the channel width of a pull down transistor in the SRAM cell is greater than about 0.8. The SRAM cell further includes a boron free inter-layer-dielectric layer, an inter-metal-dielectric layer with dielectric constant less than about 3, and a polyimide layer with a thickness of less than about 20 microns.

Abstract: In a semiconductor substrate of a first conductivity type, a first well region of the first conductivity type, second well regions of a second conductivity type, and a third well region of the second conductivity type are formed. The second well regions are formed in the semiconductor substrate excluding the region where the first well region has been formed. The third well region is formed under the first and second well regions in the semiconductor substrate in such a manner that a part of the third well region under the first well region is removed, thereby connecting the second well regions to one another electrically.

Abstract: The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

Abstract: The source area (3) is highly doped, like the channel area, for the same conductance type. The drain area (4) is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.

Abstract: The invention involves a method of packaging and interconnecting four power transistor dies to operate at a first frequency without oscillation at a second frequency higher than the first frequency but lower than a cutoff frequency of the transistors. The dies are mounted on a substrate with a lower side (drain) of each die electrically and thermally bonded to a first area of a conductive layer on the substrate. A source of each die is electrically connected to a second area of the conductive layer on the substrate. A gate of each die is electrically connected to a third, common interior central area of the conductive layer on the substrate via separate electrical leads.

Abstract: High resistance elements of 5 K? or more are connected near first and second control terminals between the first and second control terminals and respective crossing portion of first and second connectings. Even when a high frequency analog signal transmitted in a pad wire leaks to the first and second connectings, the high frequency analog signal is attenuated by the high resistance elements. Accordingly, the high frequency analog signal is not substantially transmitted to control terminal pads. It is therefore possible to suppress an increase in insertion loss.

Abstract: There is provided a technology capable of enhancing reliability in rewrite of storage information in a nonvolatile memory while checking an increase in area of a memory array thereof. With a memory array configuration, individual bit lines are connected to two memory cells sharing a source, and disposed at symmetrical positions, respectively, and two lengths of metal interconnections (the bit lines) are disposed with respect to a width in the direction of a channel width of a region occupied by one of the memory cells. In contrast, respective control gates of the memory cells corresponding to two word are rendered at an identical potential, and respective memory gates thereof are rendered at an identical potential, thereby disposing three lengths of metal interconnections (a control gate control line, memory gate control line, and common source line) with respect to a length of the regions occupied by the two memory cells in the direction of a channel length.

Abstract: An apparatus and method for manufacturing rotated field effect transistors. The method comprises providing a substrate including a first gate structure and a second gate structure, which are not parallel to each other. The method further includes performing a first ion implant substantially orthogonal to an edge of the first gate structure to form a first impurity region and performing a second ion implant at a direction different than that of the first ion implant and substantially orthogonal to an edge of the second gate structure to form a second impurity region under the edge of the second gate structure.

Abstract: A dual structure is introduced to the transistor in a flip-flop or a data input step controlled by a clock of a semiconductor logic circuit. The dual structure is formed by connecting a transistor with a MOS transistor having a channel of the same conductivity type in series with respect to the line of a source or drain and connecting their gates to each other, or by connecting an inverter with p-MOS transistors, one for VDD side and one for VSS side of the output step. The dual structure prevents single event phenomenon in a semiconductor logic circuit, such as inverter, SRAM and data latch circuit.

Abstract: A process margin of an interconnect is to be expanded, to minimize the impact of vibration generated during a scanning motion of a scanning type exposure equipment. In a semiconductor device, the interconnect handling a greater amount of data (frequently used interconnect) is disposed in a same orientation such that the longitudinal direction of the interconnects is aligned with a scanning direction of a scanning type exposure equipment, in an interconnect layer that includes a narrowest interconnect or a narrowest spacing between the interconnects. Aligning thus the direction of the vibration with the longitudinal direction of the pattern can minimize the positional deviation due to the vibration.

Abstract: A semiconductor integrated circuit has a first functional block, a second functional block, and a signal line routed from the first functional block to the second functional block in a metal interconnection layer. A complementary pair of metal-oxide-semiconductor circuits with source, gate, and drain terminals are located near the signal line between the first and second functional blocks. The drain terminals extend to the same metal interconnection layer as the signal line, but are not connected to the signal line. The circuit can be redesigned to invert the signal transmitted on the signal line by altering a single mask defining the metal interconnection layer, so as to divide the signal line into a first part connected to the gate terminals and a second part connected to the drain terminals of the complementary pair of metal-oxide-semiconductor circuits.

Abstract: A layout for a transistor in a standard cell is disclosed. The layout for a transistor includes an active region with at least one portion having a first edge and at least one portion having a second edge all perpendicular to a channel of the transistor; and a gate placed on top of the active region with a distance from an edge of the gate to the first edge being shorter than a distance from the edge of the gate to the second edge of the active region, wherein the active region is of a non-rectangular shape.

Abstract: Main-transistors M1 and M2 are divided into sub-transistors that are arrayed in a matrix with four rows and four columns to form four cells so that each of the cells is formed of four of the sub-transistors that have a common center. This can realize a layout configuration that is as good in matching of the main-transistors M1 and M2 as a four-segment layout scheme and takes small pattern area.

Abstract: Provided is an inverter having a new structure capable of easily controlling a threshold voltage according to position in fabricating an inverter circuit on a plastic substrate using an organic semiconductor. A driver transistor is formed with a dual-gate structure and a positive bias voltage is applied to the top gate of the driver transistor so that a body effect appears in the organic semiconductor. Accordingly, the threshold voltage is shifted to a negative zone due to positive potential applied to the top gate of the driver transistor so that the driver transistor acts as an enhancement type transistor. A dual-gate organic structure may be applied to a load transistor rather than the driver transistor, or a p-type dual-gate organic transistor structure may be applied to both the driver transistor and the load transistor.

Abstract: Of a plurality of standard cells in which an N-well region and a P-well region are vertically formed, some standard cells have a border line between the N-well region and the P-well region which is set to be a low height (first height), and other standard cells have a border line between the N-well region and the P-well region which is set to be a high height (second height), depending on the size of a transistor formed in the standard cell. Although these standard cells have different border lines, a standard cell for linking the border lines is provided. In such a standard cell, an empty space is created by forming a small-size transistor therein, and the empty space is utilized so that, for example, a left end of the border line is set to have the first height and a right end of the border line is set to have the second height, whereby the border line is converted so as to link the heights therein.

Abstract: In one embodiment, a circuit may be formed by forming at least one bent-gate output stage transistor and at least one bent-gate input stage transistor. The bent-gate output stage transistor may be electrically isolated from an input to the bent-gate input stage transistor by forming at least one bent-gate grounded-gate transistor between the bent-gate output stage transistor and the input to the bent-gate input stage transistor.

Abstract: Semiconductor integrated circuit device wherein action for averting antenna effect has been taken, and method for producing a semiconductor integrated circuit device in which action for averting the antenna effect can be taken with ease. The method for producing a semiconductor integrated circuit device includes forming step of forming a semiconductor region of first conductivity type, a first diffusion region of the first conductivity type, formed in the semiconductor region of the first conductivity type, a gate insulating film formed in the semiconductor region of the first conductivity type, gate electrode on the gate insulating film and a wiring layer electrically connected to the gate electrode. The method also includes an investigating step of investigating, following the forming step, into whether or not it is necessary to take an action for averting an antenna effect in the wiring layer.

Abstract: A method and device for increasing pFET performance without degradation of nFET performance. The method includes forming a first structure on a substrate using a first plane and direction and forming a second structure on the substrate using a second plane and direction. In use, the device includes a nFET stack on a substrate using a first plane and direction, e.g., (100)<110> and a pFET stack on the substrate using a second plane and direction, e.g., (111)/<112>. An isolation region within the substrate is provided between the nFET stack and the pFET stack.

Abstract: A complementary metal oxide semiconductor (CMOS) device having improved performance includes a first device active region including at least one pair of transistor active regions wherein one transistor active region has a first width and the other transistor active region for forming a contact has a second width, a first gate arranged on the first device active region, a MOS transistor of a first conductivity type including a source/drain region of the first conductivity type formed in the first device active region, a second device active region having a third width greater than the first width, a second gate arranged on the second device active region, and a MOS transistor of a second conductivity type including a source/drain region of the second conductivity type formed in the second device active region.

Abstract: In general, this disclosure is directed to circuitry for implementation of headswitches and footswitches in an ASIC for power management. The disclosed circuitry supports not only effective power management, but also efficient use of ASIC area, reduced complexity, and the use of electronic design automation (EDA) tools. In this manner, the disclosed circuitry can support enhanced performance and simplified ASIC design. In some cases, headswitch or footswitch circuitry may be implemented as a switch pad ring that extends around a hard macro forming part of an ASIC core. In other cases, headswitch or footswitch circuitry can be distributed within an ASIC core by embedding distributed headswitch or footswitch components under metal layer power routing coupled to standard cell rows.

Abstract: A semiconductor device includes a semiconductor substrate; a diffusion region which is formed in the semiconductor substrate and serves as a region for the formation of a MIS transistor; an element isolation region surrounding the diffusion region; at least one gate conductor film which is formed across the diffusion region and the element isolation region, includes a gate electrode part located on the diffusion region and a gate interconnect part located on the element isolation region, and has a constant dimension in the gate length direction; and an interlayer insulating film covering the gate electrode. The semiconductor device further includes a gate contact which passes through the interlayer insulating film, is connected to the gate interconnect part, and has the dimension in the gate length direction larger than the gate interconnect part.

Abstract: A semiconductor device including a multiplicity of large current power elements with each power element divided into a multiplicity of divisional elements and arranged such that the power elements belonging to different power elements are arranged in a repetitive sequential order. The IC chip of the semiconductor device is formed to have output wires extending from the respective divisional elements connected to corresponding output pads without crossing other output wires. Arranged on the IC chip are output bumps in association with the respective output pads. A rewiring layer is provided having output coupling wires for connecting together the bumps that belong to the same power element and connecting them further to an external output electrode.

Abstract: A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At least one of the first and second output HVFETs is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.