With Shield, Filter, Or Lens Patents (Class 257/294)
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Patent number: 8049257Abstract: Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging. The CMOS image sensor may include: a semiconductor substrate; at least one photodiode on or in the semiconductor substrate; a first insulating layer on the substrate including the photodiode(s); a plurality of metal lines on and/or in the first insulating layer; a second insulating layer on the first insulating layer including at least some of the metal lines; a patterned light shielding layer on the second insulating layer; and microlenses in a remaining space on the second insulating layer.Type: GrantFiled: August 12, 2008Date of Patent: November 1, 2011Assignee: Dongbu Electronics Co., Ltd.Inventor: Sang Gi Lee
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Patent number: 8035144Abstract: The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention proposes positioning, between the adjacent filters of different colors (FR, FB, FV), a wall (20) of a material tending to reflect the light so that the light arriving obliquely on a determined filter corresponding to a first pixel does not tend to pass toward an adjacent filter or toward a photosensitive zone corresponding to an adjacent pixel but is returned by the wall to the first filter or the photosensitive zone corresponding to the first pixel. The wall is preferably made of a material with a high reflection coefficient such as aluminium and it is sunk depthwise into the thinned semiconductor layer (16), preferably in p+ diffusions formed in the layer if it is of p-type.Type: GrantFiled: September 19, 2007Date of Patent: October 11, 2011Assignee: E2V SemiconductorsInventor: Pierre Fereyre
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Patent number: 8035710Abstract: A solid-state imaging device including a color filter having a filter characteristic more approaching to a human visual sensitivity is provided. The color filter including a group of dielectric layers has high-refractive-index-material films and low-refractive-index-material films, the high-refractive-index-material film and the low-refractive-index-material film being n films and (n?1) films, respectively, which are laminated alternately, n being an integer equal to or larger than 4. The color filter includes at least a red-transmission filter, a green-transmission filter, and a blue-transmission filter. The group of dielectric layers is common in the color filter and includes two of the high-refractive-index-material films and one of the low-refractive-index-material films positioned between and in contact with the two of high-refractive-index-material films.Type: GrantFiled: June 6, 2008Date of Patent: October 11, 2011Assignee: Panasonic CorporationInventor: Shinzo Koyama
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Patent number: 8035143Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.Type: GrantFiled: November 2, 2009Date of Patent: October 11, 2011Assignee: Dongbu Hitek Co., Ltd.Inventor: Hoon Jang
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Patent number: 8035180Abstract: Provided is an image sensor and method for manufacturing the same. The image sensor includes a semiconductor substrate including a photodiode for each unit pixel, an interlayer insulating layer including metal lines on the semiconductor substrate, and an optical refractive part in a region of the interlayer insulating layer corresponding to the photodiode for focusing light on the photodiode. The optical refractive part can be formed by implanting impurities into the interlayer insulating layer.Type: GrantFiled: September 12, 2008Date of Patent: October 11, 2011Assignee: Dongbu Hitek Co., Ltd.Inventor: Seung Ryong Park
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Patent number: 8030692Abstract: A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.Type: GrantFiled: May 30, 2008Date of Patent: October 4, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Tadao Inoue, Hiroshi Daiku
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Patent number: 8030720Abstract: A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.Type: GrantFiled: January 27, 2010Date of Patent: October 4, 2011Assignee: Sony CorporationInventor: Keiji Mabuchi
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Patent number: 8030693Abstract: There is provide a divided exposure technology capable of restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.Type: GrantFiled: May 4, 2010Date of Patent: October 4, 2011Assignee: Renesas Electronics CorporationInventors: Masatoshi Kimura, Hiroki Honda
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Patent number: 8031232Abstract: The present invention relates to an image pickup apparatus, a method for capturing an image, and a method for designing the image pickup apparatus capable of realizing a fixed focal length image pickup apparatus of high resolution and fine resolution at a low cost by disposing a plurality of image pickup elements therein. An image pickup device 31 is of a focal coincidence type having a plurality of image pickup elements, such as CCD sensors 62-1 to 62-3, arranged in an array.Type: GrantFiled: January 13, 2006Date of Patent: October 4, 2011Assignee: Sony CorporationInventors: Tetsujiro Kondo, Yasushi Tatehira, Tetsushi Kokubo, Kenji Tanaka, Hitoshi Mukai, Hirofumi Hibi, Kazumasa Tanaka
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Patent number: 8026541Abstract: A liquid crystal display (LCD) panel is provided. The LCD panel includes an active device array substrate, an opposite substrate, and a liquid crystal layer. The active device array substrate includes a plurality of pixel units, and each of the pixel units has a reflective area and a transmissive area. The opposite substrate is disposed above the active device array substrate and has a plurality of first alignment protrusions corresponding to the reflective area and a plurality of second alignment protrusions corresponding to the transmissive area. The first and the second alignment protrusions are positioned between the opposite substrate and the active device array substrate. Additionally, a height of the first alignment protrusions is greater than a height of the second alignment protrusions. The liquid crystal layer is disposed between the opposite substrate and the active device array substrate. The LCD panel has a high aperture ratio.Type: GrantFiled: July 20, 2007Date of Patent: September 27, 2011Assignee: Au Optronics CorporationInventors: Shih-Chyuan Fan Jiang, Ching-Huan Lin, Chih-Ming Chang
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Patent number: 8022453Abstract: An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.Type: GrantFiled: August 4, 2010Date of Patent: September 20, 2011Assignee: Crosstek Capital, LLCInventor: Sang Hyuk Park
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Patent number: 8022452Abstract: A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.Type: GrantFiled: December 12, 2008Date of Patent: September 20, 2011Assignee: Omnivision Technologies, Inc.Inventors: Shen Wang, Robert P. Fabinski, Robert Kaser
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Patent number: 8022493Abstract: Provided are embodiments of an image sensor. The image sensor can comprise a first substrate including a transistor circuit, a lower interconnection layer, an upper interconnection layer, and a second substrate including a vertical stacked photodiode. The lower interconnection layer is disposed on the first substrate and comprises a lower interconnection connected to the transistor circuit. The upper interconnection layer is disposed on the lower interconnection layer and comprises an upper interconnection connected with the lower interconnection. The vertical stacked photodiode can be disposed on the upper interconnection layer and connected with the upper interconnection through, for example, a single plug connecting a blue, green, and red photodiode of the vertical stack or a corresponding plug for each of the blue, green, and red photodiode of the vertical stack.Type: GrantFiled: September 17, 2008Date of Patent: September 20, 2011Assignee: Dongbu Hitek Co., Ltd.Inventor: Sun Kyung Bang
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Patent number: 8022492Abstract: A semiconductor device for performing photoelectric conversion has a semiconductor substrate of a first conductivity type and a well region of a second conductivity type different from the first conductivity type and formed in a predetermined region of the semiconductor substrate. A pair of trenches are formed directly adjacent to respective opposite sides of the well region and have widths greater than those of respective depletion layers generated on the respective opposite sides so as to remove junction interfaces on the respective opposite sides. A depth of each trench from a surface of the semiconductor substrate is greater than that of a depletion layer generated on a bottom side of the well region. An insulating layer is buried in each of the trenches.Type: GrantFiled: February 22, 2007Date of Patent: September 20, 2011Assignee: Seiko Instruments Inc.Inventors: Atsushi Iwasaki, Hiroaki Takasu
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Patent number: 8018013Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.Type: GrantFiled: April 27, 2007Date of Patent: September 13, 2011Assignee: Au Optronics CorporationInventors: Hsiang-Lin Lin, Ching-Yu Tsai, Yi-Sheng Cheng, Kuo-Yu Huang
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Patent number: 8017984Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 13, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 8017982Abstract: Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors, and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Imagers with image sensing elements and transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such imagers.Type: GrantFiled: June 12, 2007Date of Patent: September 13, 2011Assignee: Micron Technology, Inc.Inventors: Kyle K. Kirby, Steve Oliver
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Patent number: 8014060Abstract: In a substrate for a display apparatus, the substrate includes a base substrate and a shielding layer formed on a surface of the base substrate. The shielding layer has an energy bandgap corresponding to a reference wavelength of external light. Thus, the shielding layer blocks light having wavelength equal to or less than the reference wavelength, so that a wavelength band of light may be adjusted.Type: GrantFiled: September 2, 2009Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-Joon Hong, Min-Ho Yoon, Nam-Seok Roh, Woo-Jae Lee, Jong-Seong Kim
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Patent number: 8013411Abstract: Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.Type: GrantFiled: December 20, 2007Date of Patent: September 6, 2011Assignee: Micron Technology, Inc.Inventor: Bryan G. Cole
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Patent number: 8004028Abstract: A solid state imaging device including photoelectric conversion devices which are arranged two-dimensionally; a color filter including a plurality of picture elements, each disposed corresponding to each of the photoelectric conversion devices; and a plurality of transfer lenses each disposed corresponding to each of the picture elements, formed of a thermoset acrylic resin, and formed directly on each of the picture elements, wherein a gap between neighboring transfer lenses is not more than 0.035 ?m, and a contact length between neighboring transfer lenses is within the range of 3-80% of the pitch of the plurality of transfer lenses.Type: GrantFiled: April 24, 2009Date of Patent: August 23, 2011Assignee: Toppan Printing Co., Ltd.Inventors: Kenzo Fukuyoshi, Tadashi Ishimatsu, Keisuke Ogata, Mitsuhiro Nakao, Akiko Uchibori
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Patent number: 8004027Abstract: Provided is an image sensor. The image sensor comprises an interlayer dielectric, lines, and a crystalline semiconductor layer including photodiodes and a device isolation region. The interlayer dielectric can be formed on a first substrate comprising a readout circuitry. The lines pass through the interlayer dielectric to connect with the readout circuitry, and each line is formed according to unit pixel. The crystalline semiconductor layer can be bonded on the interlayer dielectric including the lines. The photodiodes, formed inside the crystalline semiconductor layer, are electrically connected with the lines. The device isolation region comprises conductive impurities and is formed inside the crystalline semiconductor layer so that the photodiodes can be separated according to unit pixels.Type: GrantFiled: September 5, 2008Date of Patent: August 23, 2011Assignee: Dongbu HiTek Co., Ltd.Inventor: Joon Hwang
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Patent number: 8003429Abstract: A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.Type: GrantFiled: November 17, 2008Date of Patent: August 23, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Ho Lee, Sang-Il Jung, Young-Hoon Park, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
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Patent number: 7999291Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.Type: GrantFiled: August 29, 2006Date of Patent: August 16, 2011Assignee: Sony CorporationInventors: Takeshi Takeda, Tadayuki Dofuku, Kenji Takeo
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Patent number: 7999292Abstract: An image sensor can be formed of a first substrate having a readout circuitry, an interlayer dielectric, and lower lines, and a second substrate having a photodiode. The first substrate comprises a pixel portion and a peripheral portion. The readout circuitry is formed on the pixel portion. The interlayer dielectric is formed on the pixel portion and the peripheral portion. The lower lines pass through the interlayer dielectric to electrically connect with the readout circuitry and the peripheral portion. The photodiode is bonded to the first substrate and etched to correspond to the pixel portion. A transparent electrode is formed on the interlayer dielectric on which the photodiode is formed such that the transparent electrode can be connected with the photodiode and the lower line in the peripheral portion. A first passivation layer can be formed on the transparent electrode. In one embodiment, the first passivation layer includes a trench exposing a portion of the transparent electrode.Type: GrantFiled: September 5, 2008Date of Patent: August 16, 2011Assignee: Dongbu Hitek Co., Ltd.Inventor: Joon Hwang
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Patent number: 7994554Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof.Type: GrantFiled: May 7, 2009Date of Patent: August 9, 2011Assignee: Dongbu Electronics Co., Ltd.Inventor: Chang Hun Han
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Patent number: 7994553Abstract: A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes arType: GrantFiled: August 20, 2008Date of Patent: August 9, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Yong Sun Yoon, Kun Sik Park, Jong Moon Park, Bo Woo Kim, Jin Yeong Kang
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Patent number: 7994552Abstract: An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).Type: GrantFiled: March 4, 2008Date of Patent: August 9, 2011Assignee: Canon Kabushiki KaishaInventors: Hiroshi Yuzurihara, Seiichi Tamura, Ryuichi Mishima
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Patent number: 7989861Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.Type: GrantFiled: August 22, 2008Date of Patent: August 2, 2011Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Yi-Tae Kim, Sang-Il Jung, Yun-Ho Jang, Kyung-Ho Lee, Sae-Young Kim
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Patent number: 7989237Abstract: Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity and electrode access holes. Materials of the reflecting layer and electrode can be different from each other whose preferred materials can be chosen in accordance with a correspondent function. Formation of the electrode can be patterned by an etching method or a lift-off method.Type: GrantFiled: September 25, 2008Date of Patent: August 2, 2011Assignee: Advances Optoelectronic Technology, Inc.Inventors: Wen Liang Tseng, Lung Hsin Chen
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Patent number: 7989896Abstract: A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the alType: GrantFiled: November 4, 2009Date of Patent: August 2, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Tomonori Aoyama, Seiji Inumiya, Kazuaki Nakajima, Takashi Shimizu
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Patent number: 7989860Abstract: An image sensor includes a circuitry, a substrate, an electrical junction region, a high concentration first conduction type region, and a photodiode. The circuitry includes a transistor and is formed on and/or over the substrate. The electrical junction region is formed in one side of the transistor. The high concentration first conduction type region is formed on and/or over the electrical junction region. The photodiode is formed over the circuitry.Type: GrantFiled: December 26, 2008Date of Patent: August 2, 2011Assignee: Dongbu HiTek Co., Ltd.Inventor: Ji-Young Park
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Patent number: 7990444Abstract: Disclosed is a solid-state imaging device which includes a group of elements, the group including at least color photoelectric conversion elements configured to convert light signals in first, second, and third wavelength ranges to electric signals, respectively, a white photoelectric conversion element configured to convert light signals in the wavelength range including the entire visible light range and a portion of the infrared light range to electric signals, and a light-shielded diode element configured to be shielded from light. A unit is formed by including the white photoelectric conversion element and the light-shielded diode element for one color photoelectric conversion element, and within the unit, the white photoelectric conversion element is electrically connected with the light-shielded diode element by way of an overflow path. A camera provided with the solid-state imaging device is also disclosed.Type: GrantFiled: January 22, 2009Date of Patent: August 2, 2011Assignee: Sony CorporationInventor: Yoshiharu Kudoh
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Publication number: 20110176023Abstract: Unit picture elements including photon-refracting microlenses. A unit picture element may include a photodiode, a metal layer, and a photo-refracting microlens. The photon-refracting microlens may be disposed between the photodiode and the metal layer. The photon-refracting microlens may refract photons reflected by the metal layer to a center portion of the photo diode.Type: ApplicationFiled: January 4, 2011Publication date: July 21, 2011Inventors: Tae-sub Jung, Bum-suk Kim, Jung-chak Ahn, Kyung-ho Lee
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Publication number: 20110163364Abstract: Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.Type: ApplicationFiled: December 23, 2010Publication date: July 7, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong-Ki Kim, Ho-Kyu Kang, June-Taeg Lee, Jae-Hee Choi
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Patent number: 7973347Abstract: Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-lens on the metal interconnection; coating an interlayer dielectric layer on the inner micro-lens and then forming a color filter; and forming an outer micro-lens including a planarization layer and photoresist on the color filter. The inner micro-lens is formed by depositing the outer layer on dome-shaped photoresist. The curvature radius of the inner micro-lens is precisely and uniformly maintained and the inner micro-lens is easily formed while improving the light efficiency. Since the fabrication process for the CMOS image sensor is simplified, the product yield is improved and the manufacturing cost is reduced.Type: GrantFiled: January 29, 2010Date of Patent: July 5, 2011Assignee: Dongbu Electronics Co., Ltd.Inventor: Ki Sik Im
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Publication number: 20110156114Abstract: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.Type: ApplicationFiled: June 7, 2010Publication date: June 30, 2011Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-ho Park, I-hun Song, Ji-hyun Hur, Sang-hun Jeon
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Patent number: 7968923Abstract: An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.Type: GrantFiled: March 12, 2008Date of Patent: June 28, 2011Assignee: OmniVision Technologies, Inc.Inventors: Satyadev Nagaraja, Vincent Venezia
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Patent number: 7965444Abstract: An optical filter structure for an imager which has customized sub-wavelength elements used to maintain the filter characteristics accordingly across a photo-conversion device to optimize the structure for the angle of incidence as it changes across the imager photo-conversion device. In particular, the layout (e.g., grating period among other parameters) of the sub-wavelength elements used in the structure design are customized to change with the angle of incidence of the optics used to project the image. The sub-wavelength elements are typically built by high resolution lithographic processes such as optical or imprint lithography.Type: GrantFiled: August 31, 2006Date of Patent: June 21, 2011Assignee: Micron Technology, Inc.Inventor: Ulrich C. Boettiger
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Patent number: 7960769Abstract: In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a lattice-like shape as viewed from above to compartment the semiconductor layer into a plurality of regions. Furthermore, a red filter, a green filter and a blue filter are provided in a red picture element, a green picture element and a blue picture element, respectively. Moreover, an N-type buried semiconductor layer being in contact with the semiconductor layer is formed in an immediately lower region of the red filter in an upper layer part of the semiconductor substrate.Type: GrantFiled: March 20, 2009Date of Patent: June 14, 2011Assignee: Kabushiki Kaisha ToshibaInventor: Gaku Sudo
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Patent number: 7960807Abstract: A CMOS light detector configured to detect specific wavelengths of light includes a first sensor and a second sensor. The first sensor includes CMOS photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light of the specific wavelengths and light of other wavelengths to pass. The second sensor including further CMOS photocells, at least some of which are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows light of the other wavelengths to pass. The first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both the specific and other wavelengths is incident upon the detector.Type: GrantFiled: March 14, 2007Date of Patent: June 14, 2011Assignee: Intersil Americas Inc.Inventors: Xijian Lin, Phillip J. Benzel, Bjoy Santos, Joy Jones
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Patent number: 7960766Abstract: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.Type: GrantFiled: June 16, 2010Date of Patent: June 14, 2011Assignee: Intersil Americas Inc.Inventors: Alexander Kalnitsky, Dong Zheng, Joy Jones, Xijian Lin, Gregory Cestra
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Patent number: 7956394Abstract: A separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer.Type: GrantFiled: March 29, 2006Date of Patent: June 7, 2011Assignee: Siliconfile Technologies Inc.Inventor: Do Young Lee
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Patent number: 7952158Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.Type: GrantFiled: January 24, 2007Date of Patent: May 31, 2011Assignee: Micron Technology, Inc.Inventor: Salman Akram
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Patent number: 7948018Abstract: An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.Type: GrantFiled: April 24, 2008Date of Patent: May 24, 2011Assignee: OmniVision Technologies, Inc.Inventors: Vincent Venezia, Hidetoshi Nozaki, Duli Mao, Yin Qian, Hsin-Chih Tai, Howard E. Rhodes
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Patent number: 7935988Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.Type: GrantFiled: May 19, 2009Date of Patent: May 3, 2011Assignee: Sony CorporationInventors: Takeshi Takeda, Tadayuki Dofuku, Kenji Takeo
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Patent number: 7932533Abstract: A pixel structure driven by a scan line and a data line arranged on a substrate is provided. The pixel structure includes a control unit, an OEL unit and a semi-transparent reflector structure. The control unit driven by the scan line and the data line is arranged on the substrate. The OEL unit is arranged on the substrate and includes a transparent electrode, a light-emitting layer and a metal electrode. The transparent electrode is electrically connected with the control unit. The light-emitting layer is disposed on the transparent electrode. The metal electrode is disposed on the light-emitting layer. The semi-transparent reflector structure is sandwiched between the substrate and the OEL unit, and includes at least a plurality of first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.Type: GrantFiled: January 12, 2010Date of Patent: April 26, 2011Assignee: Chunghwa Picture Tubes, LTD.Inventors: Liang-Yuan Wang, Chih-Kwang Tzen, Pei-Lin Huang, Yi-Lung Kao, Ya-Ping Tsai, Shuenn-Jiun Tang
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Patent number: 7932122Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography.Type: GrantFiled: April 13, 2010Date of Patent: April 26, 2011Assignee: Toppan Printing Co., Ltd.Inventors: Keisuke Ogata, Kenzo Fukuyoshi, Tadashi Ishimatsu, Mitsuhiro Nakao, Satoshi Kitamura
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Patent number: 7928528Abstract: The invention provides an LCD panel with main slits corresponding to alignment protrusions. The gate lines are shielded by the electrode portion and do not overlap the main slits. Because the gate line and the major slits do not overlap, the liquid crystal molecule arrangement of the liquid crystal layer is not affected by the operating voltage of the gate line.Type: GrantFiled: July 19, 2010Date of Patent: April 19, 2011Assignee: Au Optronics Corp.Inventors: Shih-Chyuan Fan Jiang, Ching-Huan Lin, Chih-Ming Chang
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Patent number: 7928487Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 28, 2008Date of Patent: April 19, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7928488Abstract: Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring layers formed on a frontside of the semiconductor substrate, inner lenses formed on a backside of the semiconductor substrate corresponding to the photoelectric transducers, and microlenses formed above the inner lenses.Type: GrantFiled: October 6, 2008Date of Patent: April 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventor: Byung-Jun Park