Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: An image device includes a substrate having a die region defined thereon, a layout pattern positioned in the die region, and a color filter array including a plurality of color filters arranged in a matrix in the die region. The die region includes at least a die corner. The color filter array further includes at least a color filter array corner, and at least two apexes of the color filters arranged in the color filter array corner are separated from the corresponding layout pattern by a shortest distance.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.

Abstract: Semiconductor structures with damascene metal gates and pixel sensor cell shields, methods of manufacture and design structures are provided. The method includes forming a dielectric layer over a dummy gate structure. The method further includes forming one or more recesses in the dielectric layer. The method further includes removing the dummy gate structure in the dielectric layer to form a trench. The method further includes forming metal in the trench and the one more recesses in the dielectric layer to form a damascene metal gate structure in the trench and one or more metal components in the one or more recesses.

Abstract: An image sensor having an array of pixels disposed in a substrate. Each pixel includes a photosensitive element, a color filter, and waveguide walls. The waveguide walls are disposed in the color filter and surround portions of the color filter to form waveguides through the color filter. The refractive index of the waveguide walls is less than the refractive index of the color filter. The image sensor may be back side illuminated (BSI) or front side illuminated (FSI). In some embodiments, metal walls may be coupled to the waveguide walls.

Abstract: Provided are image sensors and methods of manufacturing the same. An image sensor includes a metal line and an interlayer insulation layer on a semiconductor substrate including a readout circuit; an image detection unit on the interlayer insulation layer and including stacked first and second doping layers; a pixel separation unit penetrating the image detection unit, separating the image detection unit by pixel; a first metal contact penetrating the image detection unit and the interlayer insulation layer to contact the metal line; a first barrier pattern protecting the first metal contact from contacting the second doping layer, while exposing the first metal contact to the first doping layer; and a second metal contact in a trench above the first metal contact, wherein the second metal contact is electrically connected to the second doping layer while being isolated from the first metal contact by a second barrier pattern.

Abstract: To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

Abstract: This describes color filter arrangements for image sensor arrays that are formed using image sensor pixels with stacked photo-diodes. The stacked photo-diodes may include first and second photo-diodes and may have the ability to separate color signal according to the depth of carrier generation in a silicon substrate. A single color filter may be formed over the stacked photo-diodes to provide full red-green-blue sensing capability. Charge drain regions may also be formed at different depths in the silicon substrate. If the charge drain regions are formed beneath the stacked photo-diodes in the substrate, full red-green-blue color sensing may be achieved without the use of color filters.

Abstract: The invention relates to processes for the production and elements (components) with a nanostructure (2; 4, 4a) for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure (2) is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.

Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Abstract: The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

Abstract: A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.

Abstract: An image sensor includes near-infrared cut filters formed over an array of photosensitive elements in a predetermined pattern. The near-infrared cut filters may be formed over one half of a photosensitive element in a split pixel arrangement, over one half the photosensitive elements in the array, over every other photosensitive element in the array, and/or in a checkerboard pattern.

Abstract: A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.

Abstract: A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.

Abstract: A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

Abstract: An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.

Abstract: A printed wiring board on which a package to be arranged, including: a first layer that is relatively rigid; and a second layer that is relatively flexible and on which the package is to be soldered, wherein an area other than a package arrangement area of the second layer is joined to the first layer by an adhesion layer.

Abstract: An image or light sensor chip package includes an image or light sensor chip having a non-photosensitive area and a photosensitive area surrounded by the non-photosensitive area. In the photosensitive area, there are light sensors, a layer of optical or color filter array over the light sensors and microlenses over the layer of optical or color filter array. In the non-photosensitive area, there are an adhesive polymer layer and multiple metal structures having a portion in the adhesive polymer layer. A transparent substrate is formed on a top surface of the adhesive polymer layer and over the microlenses. The image or light sensor chip package also includes wirebonded wires or a flexible substrate bonded with the metal structures of the image or light sensor chip.

Abstract: An image sensor includes a substrate, transparent layers covering the substrate and delimiting an exposition surface exposed to light, separate photosensitive areas at the substrate level and, for each photosensitive area, a first optical means capable of deviating towards the photosensitive area light reaching a central region of a portion of the exposition surface. The sensor further includes, for each photosensitive area, a second optical means, separate from the first optical means, capable of deviating towards the photosensitive area light reaching a peripheral region of the portion of the exposition surface surrounding the central region.

Abstract: A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion.

Abstract: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

Abstract: The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

Abstract: An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration of a stepped portion between two areas, where the first and the second group of micro lenses are formed, over a planarization layer below these two areas. Thus, a zero gap is realized, where no gap between micro lenses exists, and the fill factor of micro lens is maximized. By the realization of the zero gap, interference effects decrease, noise decreases, and fill factor increases, and thus the sensitivity of an image sensor increases, especially the green sensitivity.

Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.

Abstract: An image pickup apparatus which can photograph a high-definition image and a moving image of lower resolution at high quality and an image pickup system which uses the image pickup apparatus are provided. Unit pixel groups each of which comprises plural pixels including photoelectric conversion units and transfer transistors for transferring signal charges from the photoelectric conversion units, an amplification transistor common to the plural pixels, and the like are arranged in row and column directions. With respect to the plural unit pixel groups mutually adjacent in the row direction, control lines for controlling the transfer transistors respectively corresponding to the adjacent two photoelectric conversion units are alternately connected to an odd row and an even row in the row direction.

Abstract: An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pattern includes a first opening through which the insulation pattern structure is exposed corresponding to the photodiode. A first insulation interlayer structure is formed on the anti-reflection pattern, and the first insulation interlayer structure includes at least one insulation layer and a second opening connected to the first opening. A metal wiring structure is formed in the insulation layer, and a transparent insulation pattern is formed in the first and second openings. A color filter is formed on the transparent insulation pattern, and a micro lens is formed on the color filter.

Abstract: An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

Abstract: A flat panel display device, more particularly, an Organic Light Emitting Diode (OLED) display device having uniform electrical characteristics and a method of fabricating the same include: a thin film transistor of which a semiconductor layer including a source, a drain, and a channel region formed in a super grain silicon (SGS) crystallization growth region; a capacitor formed in an SGS crystallization seed region; and an OLED electrically connected to the thin film transistor. Further, a length of the channel region of the silicon layer is parallel with the growth direction in the SGS growth region to improve the electrical properties thereof.

Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

Abstract: Photoelectric conversion elements disposed on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge; electrodes interposed between the photoelectric conversion elements; and light blocking portions provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions in the light blocking portions are arranged at second and third pitches, respectively, on the imaging surface.

Abstract: A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

Abstract: Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.

Abstract: An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel interconnect process to form a multilevel interconnect structure in the CIS region and the MEMS region and a micro-machined mesh metal in the MEMS region on a front side of the substrate; performing a first etching process to form a chamber in MEMS region in the front side of the substrate; forming a first mask pattern and a second mask pattern respectively in the CIS region and the MEMS region on a back side of the substrate; and performing a second etching process to form a plurality of vent holes connecting to the chamber on the back side of the substrate through the second mask pattern.

Abstract: In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the semiconductor substrate into a plurality of regions, and an insulating member illustratively made of BSG is buried immediately above the p-type region. PD regions are isolated from each other by the p-type region and the insulating member. Moreover, a high-concentration region is formed in a lower portion of the PD region, and an upper portion is served as a low-concentration region.

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract: In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is layered over the wiring structure. In this structure, the interlayer insulating film is thicker at a corner than at a center part of the light receiver. In order to increase efficiency of the incidence of light on the light receiver, the planar shape of the open part is formed so that the corners of the rectangle that surrounds the wiring structure are removed when the interlayer insulating film is etched and the open part is formed (i.e., yielding an octagonal shape).

Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.

Abstract: A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.

Abstract: A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter.

Abstract: A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

Abstract: An image sensor having a light receiving region and an optical black region includes a semiconductor substrate, an interconnection disposed on the semiconductor substrate and extending along an interface between the light receiving region and the optical black region, and via plugs disposed between the interconnection and the semiconductor substrate and serving as light shielding members at the interface. The via plugs are arranged in a zigzagging pattern along the interface.

Abstract: An organic light emitting device according to an embodiment includes a thin film transistor substrate including a plurality of thin film transistors and an over-coating film formed on the thin film transistors. The over-coating film includes a curved surface on at least two pixels among pixels of different colors and the slope angles of depressed portions forming the curved surface are respectively different from each other depending on the colors of the pixels. A plurality of first electrodes formed on the over-coating film includes a surface formed according to the curved surface, an organic light emitting member formed on the first electrodes includes a surface formed according to the curved surface, and a second electrode formed on the organic light emitting member includes a surface formed according to the curved surface. Slope angles of the depressed portions increase according to a decrease of wavelengths of the colors of the pixels.

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the silicon layer; a circuit element in the silicon layer; a first interlayer insulating film formed over the silicon layer; a first light-shielding film on the first interlayer film and having an opening in the photodiode forming region; and a first inter-region light-shielding plug arranged between the two regions, for connecting the silicon substrate and the first light-shielding film.