Abstract: An optical sensor assemblage, in particular a thermopile sensor assemblage, comprising a sensor chip assemblage having an optically transparent irradiation region, a mounting region surrounding the latter, and a wire-bond region; an optically isolating mounting frame having a chip receiving region and a plurality of connector elements; and an optically isolating packaging device; the sensor chip assemblage being joined in the mounting region to the chip receiving region, and in the wire-bond region to one or more of the connector elements, the chip receiving region having a window disposed in such a way that at least a portion of the optical irradiation region is not covered by the chip receiving region; and the packaging device surrounding the sensor chip assemblage and the mounting frame in such a way that optical radiation can enter the sensor chip assemblage substantially only through the window.

Abstract: A method for packaging a semiconductor device includes following steps. First, a first substrate including at least one first pattern is provided. At least one semiconductor device is disposed on the surface of the first substrate. Next, a spacer with at least one aperture and at least one through hole is provided. Then, the first pattern is aimed at the through hole to connect the first substrate and the spacer, so that the semiconductor device is positioned correspondingly to the aperture. Afterwards, a second substrate including at least one second pattern is provided. Thereon, the second pattern is aimed at the through hole, so that the second substrate is connected to the spacer correspondingly.

Abstract: An optical functional device-mounted module and a producing process thereof. A bank to dam a liquid sealing resin is provided on a substrate around an optical functional device, the substrate being formed with a predetermined wiring pattern and having the optical functional device mounted thereon. The liquid sealing resin is filled between the functional device and the bank by dropping the liquid sealing resin therebetween. A package component member having a light transmission hole corresponding to an optical function part of the optical functional device is brought into contact with the bank such that the light transmission hole is opposed to the function part of the optical functional device, thereby causing the package component member to contact with the liquid sealing resin. The package component member is fixed onto the substrate by curing the liquid sealing resin and the bank is finally cut off and removed.

Abstract: A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

Abstract: A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.

Abstract: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Abstract: A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.

Abstract: A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.

Abstract: High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.

Abstract: Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

Abstract: A package is made of a transparent substrate having an interferometric modulator and a back plate. A non-hermetic seal joins the back plate to the substrate to form a package, and a desiccant resides inside the package. A method of packaging an interferometric modulator includes providing a transparent substrate and manufacturing an interferometric modulator array on a backside of the substrate. A back plate includes a curved portion relative to the substrate. The curved portion is substantially throughout the back plate. The back plate is sealed to the backside of the substrate with a back seal in ambient conditions, thereby forming a package.

Abstract: Thin semiconductor die packages and associated systems and methods are disclosed. A package in accordance with a particular embodiment includes a semiconductor die having die bond sites, a conductive structure positioned proximate to the semiconductor die and having first bond sites and second bond sites spaced apart from the first bond sites, and conductive couplers connected between the first bond sites of the conductive structure and the die bond sites of the semiconductor die. A cover can be positioned adjacent to the semiconductor die, and can include a recess in which the conductive couplers are received.

Abstract: The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element. The cap includes a diffractive optical element and an aperture stop which collectively determine the wavelength of incident radiation that is allowed through the cap and onto the at least one optical element.

Abstract: There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.

Abstract: A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.

Abstract: A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature.

Abstract: An electro-optical device includes: a light-shielding film provided below a transistor in a peripheral area surrounding a pixel area of the display. The light-shielding film includes a rectangular opening formed in a channel length direction of the transistor.

Abstract: A semiconductor package such as an image sensor package. A frame structure includes an array of frames, each having an aperture therethrough, into which an image sensor die in combination with a cover glass, filter, lens or other components may be installed in precise mutual alignment. Singulated image sensor dice and other components may be picked and placed into each frame of the frame structure. Alternatively, the frame structure may be configured to be aligned with and joined to a wafer bearing a plurality of image sensor dice, wherein optional, downwardly protruding skirts along peripheries of the frames may be received into kerfs cut along streets between die locations on the wafer, followed by installation of other package components. In either instance, the frame structure in combination with singulated image sensor dice or a joined wafer is singulated into individual image sensor packages. Various external connection approaches may be used.

Abstract: Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42.

Abstract: An optical device includes an optical element, a transparent member arranged on the optical element, and a transparent resin adhesive for causing the transparent member to adhere and be fixed onto a circuit formation face of the optical element. The optical device includes a light detecting region having a plurality of micro lenses, a peripheral circuit region formed in the outer peripheral part of the light detecting region, and an electrode region formed at the outer peripheral part of the peripheral circuit region. A roughed region in a saw-toothed shape in section is formed in part of a face of the transparent member which adheres to the optical element, the part being overlapped with the outer peripheral part of the light detecting region as viewed in plan.

Abstract: An improved photodiode detector shielding apparatus and method are provided which shield a photodiode detector from electromagnetic interference and ambient light, without affecting the wavelengths of light that reach the photodiode. The improved photodiode detector shield has two layers. A bottom layer is substantially made from an electrically conducting material and is fixed over a photodiode in order to shield it from EMI and ambient light. A top layer is substantially made from a lustrous, shiny, reflective material that reflects an equal amount of light across a band of wavelengths. Both layers have areas with optically transmissive openings, which are aligned to allow for the unobstructed passage of light of a band of wavelengths to the photodiode. Light within a band of wavelengths is evenly reflected off the top of the first surface and also reaches the photodiode.

Abstract: A semiconductor-based optoelectronic device such as a solar cell has an n-type layer and a p-type layer, together forming a p-n junction. Contact regions are formed on the device, with light-receiving regions between contact regions. A window layer is formed over the n-type layer or the p-type layer at the light-receiving region, the window layer promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or reflection of minority carriers in the n-type or p-type layer towards the p-n junction. The device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device. For GaAs-based devices the window layer may be Al0.9Ga0.1As and the window protection layer may be GaAs. Additionally, an AlAs etch stop layer may be provided over the window protection layer.

Abstract: An image sensor package includes a molding having a locking feature. The package further includes a snap lid having a tab, where the tab is attached to the locking feature of the molding. To form the image sensor package, a window is placed in a pocket of the molding. The snap lid is secured in place. Once secured, the snap lid presses against a peripheral region of an exterior surface of the window. The window is sandwiched between the molding and the snap lid and held in place.

Abstract: A semiconductor light-emitting device includes: a substrate; a plurality of semiconductor layers grown on the substrate and including an active layer; and an electrode formed on the semiconductor layers. An opening in which at least a portion of the semiconductor layers is exposed is formed in the substrate. The electrode faces the opening in the substrate and a portion of the substrate surrounding the opening.

Abstract: A circuit element package has a substrate having a plurality of electrically conductive patterns, a die pad, and an access hole formed through the die pad and substrate. A plurality of leads is coupled to the substrate. A circuit element die is attached to the die pad wherein a first sensor port is positioned over the access hole. A die attach membrane is provided for attaching the circuit element die to the die pad. The die attach membrane allows the circuit element die to sense ambient while protecting the circuit element die from environmental damage. An encapsulant is used for covering portions of the circuit element die.

Abstract: An optical device includes a metal film that has a first plane and a second plane electrically connected to the first plane. For example, the second plane is integrally formed with the first plane. The second plane is arranged at an obtuse angle ? (90°<?<180°) with respect to the first plane. An optical semiconductor chip is mounted on the second plane of the metal film, and a light-transmitting sealing material seals the optical semiconductor chip. The light-transmitting sealing material has the metal film provided on a surface thereof.

Abstract: An image sensor chip package structure includes a transparent substrate, a chip, a sealing ring, a number of conductive posts, and a number of conductive bumps. The transparent substrate has a number of through holes. The through holes pass through the transparent substrate. The chip has an active surface, an image sensitive area, and a number of die pads. The image sensitive area and the die pads are located on the active surface. The sealing ring is disposed between the chip and the transparent substrate and surrounds the image sensitive area and the die pads. The conductive posts are disposed in the through holes, respectively. Here, the chip is electrically connected with the conductive posts via the die pads. The conductive bumps are disposed on the die pads, respectively. The conductive bumps are connected with the conductive posts, respectively.

Abstract: A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

Abstract: An analytical system-on-a-chip can be used as an analytical imaging device, for example, for detecting the presence of a chemical compound. A layer of analytical material is formed on a transparent layer overlying a solid state image sensor. The analytical material can react in known ways with at least one reactant to block light or to allow light to pass through to the array. The underlying sensor array, in turn, can process the presence, absence or amount of light into a digitized signal output. The system-on-a-chip may also include software that can detect and analyze the output signals of the device.

Abstract: An image sensing device and a packaging method thereof is disclosed. The packaging method includes the steps of providing an adhesive layer; placing a substrate, having an opening, on the adhesive layer; disposing an image sensor within the opening on the adhesive layer; adding a filler between the image sensor and the substrate; connecting the image sensor and the substrate via a plurality of bonding wires; and removing the adhesive layer.

Abstract: A structure of LED of high heat-conducting efficiency is to provide a copper substrate having a plurality of indentations. An insulating layer is formed on the surface of the substrate and the bottom of the indentations. Meanwhile, a set of metallic circuits is formed on the insulating layer of the substrate, and a layer of insulating lacquer is coated on the surface of the metallic circuits, where there is no electric connection and no enclosure. A tin layer is coated on the insulating layer of the indentation and the metallic circuits, where there is no insulating lacquer. Furthermore, a set of light-emitting chips are die bonded on the tin layer of the indentation. Next, the light-emitting chips and the metallic circuits are electrically connected by a set of gold wires. Moreover, a ringed object is arranged on the surface of the substrate, such that the light-emitting chip set, the gold wires and the metallic circuits are enclosed therein.

Abstract: An exposure apparatus includes (a) a projection optical system to project a reticle pattern onto a plate by using a light from a light source, and (b) a photo detector unit to detect the light via the projection optical system. The photo detector unit includes (i) a substrate, which is patterned with a wiring pattern and transmits the light, (ii) a detector to detect the light, and (iii) a bump to space the substrate from the detector, and to electrically connect the detector and the wiring pattern of the substrate.

Abstract: An optical connector module complete with optoelectronic devices, supporting integrated circuitry, and connector housing may be fabricated on a wafer level. A plurality of cavities may be formed on the backside of the wafer to accommodate an optoelectronic device. Active circuitry may be formed in a front side of the wafer. Through-vias electrically connect the front side to the back side. The backside of the wafer is overmolded with a polymer layer which when singulated into individual dies forms the plastic housing of an optical connector module.

Abstract: The present invention is directed to provide a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light. A back illuminated photodiode 1 comprises an N-type semiconductor substrate 10, a P+-type impurity semiconductor region 11, a recessed portion 12, a coating layer 13, and a window plate 14. In the surface layer on the upper surface S1 side of the N-type semiconductor substrate 10 is formed the P+-type impurity semiconductor region 11. In the rear surface S2 of the N-type semiconductor substrate 10 and in an area opposite the P+-type impurity semiconductor region 11 is formed the recessed portion 12 that functions as an incident part for to-be-detected light. Also, the coating layer 13 having a substantially flat surface is provided on the rear surface S2 of the N-type semiconductor substrate 10. Further, the window plate 14 is provided on the coating layer 13.

Abstract: A photovoltaic device and method of manufacture provides a P-N junction formed between doped semiconductor materials and adapted to produce photovoltaic current in response to radiant energy reaching the P-N junction, and a silicon dioxide protective window layer located in proximity to doped semiconductor material and adapted to allow radiant energy to pass therethrough en route to the P-N junction, the protective layer including a high optical transparency layer of amorphous silica, having a silicon dioxide chemistry greater than 75 molar percent (75 mol %).

Abstract: A process for protecting a MEMS device used in a UV illuminated application from damage due to a photochemical activation between the UV flux and package gas constituents, formed from the out-gassing of various lubricants and passivants put in the device package to prevent sticking of the MEMS device's moving parts. This process coats the exposed surfaces of the MEMS device and package's optical window surfaces with a metal-halide film to eliminate this photochemical activation and therefore significantly extend the reliability and lifetime of the MEMS device.

Abstract: An electric wiring of a module for an optical apparatus includes: a first through electrode passing through the solid-state image sensor; a first rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the solid-state image sensor, and being electrically connected to the first through electrode; a second rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the image processing apparatus, and being electrically connected to the first rewiring layer; a second through electrode passing through the image processing apparatus and being electrically connected to the second rewiring layer; and a third rewiring layer being formed in such a way as to be re-wired to a necessary area in a front surface of the image processing apparatus, and being electrically connected to the second through electrode. The image processing apparatus includes an external connection terminal electrically connected to the third rewiring layer.

Abstract: An economical miniaturized assembly and connection technology for LEDs and other optoelectronic modules is provided. A manufactured item in accordance with this technology includes a substrate with an optoelectronic component contacted in a planar manner.

Abstract: The image reading device of the present invention is an image reading device comprising a reading unit reading an image of an original document, a clear plate disposed between the original document and the reading unit, a clear photoemitting layer included in the clear plate and having a plurality of emitting areas, a clear input sensor included in the clear plate and outputting a two-dimensional position of a pushed place on the clear plate and an controller displaying an operation panel on the clear plate using the clear photoemitting layer and receiving operations to the operation panel.

Abstract: There is provided a packaging apparatus of a terahertz device, the apparatus including: a terahertz device having an active region at which terahertz wave is radiated or detected; a device substrate mounting the terahertz device whose active region is positioned at an opening region formed at the center of the device substrate, and electrically connecting the terahertz device and an external terminal to each other; a ball lens block arranged and fixed to an upper part of the terahertz device; and upper and lower cases receiving the device substrate mounted with the terahertz device therein and opening region vertical upper and lower portions of the active region of the terahertz device.

Abstract: Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.

Abstract: A light emitting device fabrication method. The fabrication method of the light emitting device comprises providing a light emitting semiconductor device; positioning a plurality of luminescent particles at the optical path of the light emitting semiconductor device; and reducing the distance between the luminescent particles to enhance the molecular attraction between the luminescent particles, than the luminescent particles is coagulated to a luminescent powder layer by the molecular attraction.

Abstract: The reliability of a photosensor-type semiconductor device is enhanced. The sealing step in a manufacturing process for the semiconductor device is carried out as described below. A molding die having an upper die and a lower die is prepared and a film is arranged between the upper die and the lower die. A lead frame in which first adhesive, a semiconductor chip, second adhesive 11, and a base material are mounted over the upper surface of each tab is arranged between the film and the lower die. The base material has an opening formed therein and the opening is covered with a protective sheet. The semiconductor chip has a light receiving area formed in its main surface. The upper die and the lower die are clamped to cause part of the base material to bite into the film. Thereafter, sealing resin is supplied to between the film and the lower die to form a blanket sealing body. Thus the photosensor-type semiconductor device without resin flash over the light receiving area is obtained.

Abstract: An image sensor is packaged by attaching the image sensor to a substrate, forming metallic bumps on either the image sensor or a transparent cover, where the metallic bumps are formed in a pattern around the perimeter of the active area of the image sensor. The transparent cover is then glued to the image sensor at the metallic bumps. Electrical connections are formed between the image sensor and the substrate using, for example, conventional wire bonding techniques. The electrical connections are encapsulated within an epoxy for protection. In an embodiment, multiple image sensors are packaged together on the same substrate and separated into individually packaged image sensors by, for example, sawing.

Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.

Abstract: An implantable, miniaturized platform and a method for fabricating the platform is provided, where the e platform includes a top cover plate and a bottom substrate, top cover plate including an epitaxial, Si-encased substrate and is configured to include monolithically grown devices and device contact pads, the Si-encased substrate cover plate including a gold perimeter fence deposited on its Si covered outer rim and wherein the bottom substrate is constructed of Si and includes a plurality of partial-Si-vias (PSVs), electronic integrated circuits, device pads, pad interconnects and a gold perimeter fence, wherein the device pads are aligned with a respective device contact pad on the top cover plate and includes gold bumps having a predetermined height, the top cover plate and the bottom substrate being flip-chip bonded to provide a perimeter seal and to ensure electrical connectivity between the plurality of internal devices and at least one external component.

Abstract: An illuminance detecting component includes: a supporting substrate including a substrate body made of silicon, and pads provided on an upper surface of the substrate body; a plurality of light receiving elements connected electrically to the pads and receiving light irradiated from an outside, the plurality of light receiving elements being arranged in array fashion on the upper surface side; external connection terminals connected electrically to the light receiving elements; and a translucent member provided on the substrate body. In the illuminance detecting component, an airtight space in which the plurality of light receiving elements are accommodated is formed between the translucent member and the substrate body.

Abstract: Apparatuses and methods directed to an integrated circuit package having an optical component are disclosed. The package may include an integrated circuit die having at least one light sensitive region disposed on a first surface thereof. By way of example, the die may be a laser diode that emits light through the light sensitive region, or a photodetector that receives and detects light through the light sensitive region. An optical concentrator may be positioned adjacent the first surface of the first die. The optical concentrator includes a lens portion positioned adjacent the light sensitive region and adapted to focus light.

Abstract: Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package includes a semiconductor chip, a transparent substrate, an adhesive pattern, and at least one dew-proofer. The semiconductor includes a pixel area. The transparent substrate is disposed on the semiconductor chip. The adhesive pattern is disposed between the semiconductor chip and the transparent substrate and provides a space on the pixel area. At least one dew-proofer is disposed between the semiconductor chip and the transparent substrate and spaced from the adhesive pattern.

Abstract: A semiconductor device manufacturing method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom.