Abstract: Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate including a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.

Abstract: An optical device includes a semiconductor substrate (11) on which a light receiving part (12) (or a light emitting part) and electrodes (13) are formed, and a translucent plate (2) bonded on the light receiving part (12) with a translucent adhesive (5), the semiconductor substrate (11) having a plurality of convex portions (31) formed so as to separate the light receiving part (12) and the electrodes (13) and have proper gaps (32) therebetween.

Abstract: A packaging substrate having a semiconductor chip embedded and a fabrication method thereof are provided. The method includes forming a semiconductor chip in a through cavity of a core board and exposing a photosensitive portion of the semiconductor chip from the through cavity; sequentially forming a first dielectric layer and a first circuit layer on the core board, the first circuit layer being electrically connected to the electrode pads of the semiconductor chip; forming a light-permeable window on the first dielectric layer to expose the photosensitive portion of the semiconductor chip and adhering a light-permeable layer onto the light-permeable window, thereby permitting light to penetrate through the light-permeable layer to reach the photosensitive portion. Therefore, when fabricated with the method, the packaging substrate dispenses with conductive wires and dams and thus can be downsized.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

Abstract: A semiconductor device is disclosed. In one embodiment, a device includes a substrate having one or more vias and a carrier coupled to the substrate to form a sealed cavity between the carrier and the substrate. In some embodiments, the sealed cavity may be pressurized. The device may also include a redistribution layer formed over the one or more vias on a side of the substrate. Other devices, systems, and methods are also disclosed.

Abstract: A semiconductor substrate is bonded to a glass board in a peripheral portion of the semiconductor substrate by an adhesive layer. A hollow region is formed in a portion surrounded by the semiconductor substrate, the glass board, and the adhesive layer. In the hollow region, reinforcing adhesive layers are formed on a back surface of the semiconductor substrate and at positions corresponding to bumps provided at regular intervals. The reinforcing adhesive layers allow the semiconductor substrate to have strength withstanding to a load of a testing probe.

Abstract: An integrated circuit having a semiconductor sensor device including a sensor housing partly filled with a rubber-elastic composition is disclosed. One embodiment has a sensor chip with sensor region arranged in the interior of the housing. The sensor housing has an opening to the surroundings which is arranged in such a way that the sensor region faces the opening. The sensor chip is embedded into a rubber-elastic composition on all sides in the interior of the housing. The sensor housing has a sandwich-like framework having three regions arranged one above another, including an intermediate region with the rubber-elastic composition.

Abstract: An optical transmitter includes a package including a cavity formed at an upper part thereof, a light transparent member disposed on the package, and a flexible substrate including a circuit pattern formed on at least one side thereof and being placed on a back surface of the light transparent member.

Abstract: A semiconductor light emitting device is provided so that an optical axis thereof is properly set parallel with the mounting board when the device is mounted on the mounting board. The semiconductor light emitting device can have a structure in that light can be incident on the light guide plate with high efficiency and uniform introduction into the light guide plate. A multi-piece substrate can include electrodes, a plurality of semiconductor light emitting elements, and a sealing resin for sealing them simultaneously. The thus obtained integrated substrate is cut into individual semiconductor light emitting device bodies. On one of the cut end faces, which serves as a surface to be mounted onto a mounting board, a light-shielding reflective film can be coated over an area from the edge of the light emission surface of the sealing resin to at least part of the substrate. On the other cut end face, the sealing resin can be covered with a light-shielding reflective film.

Abstract: A light emitting diode structure and a light emitting diode structure forming method are provided. The light emitting diode structure includes a base, a diode chip, and a package lens. The diode chip is mounted on the base. The package lens covers the diode chip. The surface of the package lens includes a plurality of dot structures. The steps of the method include mounting a light-emitting diode chip on a base, assembling a package lens to cover the light emitting diodes chip, and forming a plurality of dot structures on the surface of the package lens.

Abstract: A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.

Abstract: A method of manufacturing a micromodule including the steps of: producing an integrated circuit on an active face of a chip made of a semi-conductive material, making a via passing through the chip, electrically linked to the integrated circuit, and inserting the chip into a box comprising a cavity and an electrically conductive element, the active face of the chip being disposed towards the bottom of the cavity, forming on at least one part of a lateral face of the chip a conductive lateral layer made of an electrically conductive material, electrically linked to a conductive element of the rear face of the chip, and producing a connection between the conductive lateral layer and the conductive element by depositing an electrically conductive material in the cavity.

Abstract: An electromagnetic shielding device in an infrared receiver comprises of a wiring frame (4) of metal and an electromagnetic shielding cover (1) of metal. There is a window (2) in the electromagnetic shielding cover (1), in which there is provided a shielding net (3). The electromagnetic shielding cover (1) has a protruding tongue (6) in the bottom of its both sides respectively and the protruding tongues (6) are bent downwards and entad to engage on the wiring frame (4), thus forming an electromagnetic shielding structure transparent to a chip inside. The electromagnetic shielding device of the present invention is simple in structure, reasonable in design, easy to manufacture, low-cost, high qualified ratio and thus suitable for mass productivity. The electromagnetic shielding device improves the electromagnetic interference preventive capability of a semiconductor element and thus increases the sensibility and reliability of an infrared receiver.

Abstract: A camera module includes an image sensor chip, a lens structure, a transparent substrate, an adhesive portion, and a light blocking layer. The image sensor chip includes a light receiving area and a circuit area. The lens structure is positioned on the image sensor chip and configured to allow light to enter the image sensor chip. The transparent substrate is positioned between the image sensor chip and the lens structure, the transparent substrate allowing light from the lens structure to enter the light receiving area. The adhesive portion attaches the image sensor chip and the transparent substrate, and covers the circuit area. The light blocking layer is attached to the transparent substrate to block light from entering the circuit area.

Abstract: Hermetic seal for a device includes a substrate. A first strip on the substrate has a first surface wettability and a second strip on the substrate has a second surface wettability different from the first surface wettability. The seal further includes a first cover strip having the first surface wettability spaced from the first substrate strip and a second cover strip having the second surface wettability spaced from the second substrate strip in contact with the first cover strip. A sealing member wets and adheres to the first substrate and cover strips but not the second substrate and cover strips.

Abstract: Gold bumps are located over electrode pads of a solid imaging device and an adhesive is formed over the gold bumps. A transparent plate is supported by the gold bumps and is made to adhere over the solid imaging device by the adhesive. The gold bumps and an electrode and wiring pattern formed over a circuit board are connected by gold wires. At this time the gold wires are approximately parallel to the circuit board near portions where the gold wires and the gold bumps are connected. As a result, it is easy to locate the transparent plate over the portions where the gold wires and the gold bumps are connected. By locating the adhesive over the portions where the gold wires and the gold bumps are connected, the solid imaging device can be made small and light. As a result, a smaller lighter semiconductor device is fabricated.

Abstract: A solid element device includes a solid element, an electric power receiving and supplying part for receiving electric power from and supplying the electric power to the solid element, and an inorganic sealing material for sealing the solid element. The inorganic sealing material includes a low melting glass selected from SiO2—Nb2O5-based, B2O3—F-based, P2O5—F-based, P2O5—ZnO-based, SiO2—B2O3—La2O3-based, and SiO2—B2O3-based low melting glasses.

Abstract: There is provided a device including at least one light-receiving unit 11, a base substrate 12A provided with the light-receiving unit 11, a transparent base substrate 13A disposed facing the base substrate 12A and the light-receiving unit 11, and a frame member 14A disposed around the light-receiving unit 11 between the base substrate 12A and the transparent substrate 13A. The frame member 14A consists of a cured resin composition. The resin composition contains an alkali-soluble resin, a photopolymerizable resin and an inorganic filler in 9% or less by weight. The photopolymerizable resin contains an acrylic polyfunctional monomer. The frame member 14A has a moisture permeability of 12 [g/m2·24 h] or more and an elastic modulus of 100 Pa or more at 80 degrees C.

Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: According to one embodiment, a micro-optical device includes an electro-optical circuit and an annular frame disposed on a surface of a substrate. The electro-optical circuit has an active region that is encapsulated by a window and an interconnect region adjacent at least one edge of the electro-optical circuit. The annular frame extends around an outer periphery of the window and is separated from the window by a gap, the annular frame and the electro-optical circuit form a cavity for placement of a plurality of bonding wires the interconnect that electro-optical circuit to the substrate.

Abstract: An exemplary imaging module package includes a substrate, an imaging sensor chip set on the substrate, a housing positioned on the substrate, and a lens module. The housing includes a first chamber enclosing the imaging sensor chip therein, a second chamber coaxially extending from the first chamber for receiving the lens module therein, and a shoulder between the first and second chambers. The shoulder abuts against a top surface of the imaging sensor chip.

Abstract: An optical semiconductor device includes: a package having a bottom portion and a sidewall portion; a semiconductor chip having an optical element formed on one surface thereof and having an opposite surface to the one surface fixed to the bottom portion of the package; a transparent member fixed to the semiconductor chip so as to cover the optical element; and a sealing resin filling a space between the package and the semiconductor chip. The sidewall portion has in an upper part thereof an overhang portion that projects toward inside of the package. The transparent member is exposed from a window portion formed by the overhang portion.

Abstract: A small infrared sensor has a wide infrared light-receiving area (viewing angle), high electromagnetic shielding characteristics, and excellent electromagnetic-wave resistance characteristics. In the infrared sensor, supporting portions are disposed at four corners of a substantially rectangular opening in a package. The supporting portions support an optical filter, disposed so as to cover the opening, at positions that are lower than an upper end of an inner peripheral wall defining the opening. While the optical filter is supported by the supporting portions as a result of inserting a portion of a surface side of the optical filter facing the supporting portions into the opening, the optical filter is secured to the package. The optical filter and the package are joined and secured, and electrically connected to each other through a conductive adhesive.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on the first surface of the semiconductor substrate; a light-transmissive protective member disposed above the light-receiving part of the semiconductor substrate with a predetermined gap and adhered via the adhesive layer; and plural external connection terminals arranged in a predetermined array on the second surface of the semiconductor substrate are included. Each center point of the external connection terminals forming two facing edges is positioned inside of an area of the adhesive layer projected on the second surface among the outermost external connection terminals.

Abstract: An image sensor package includes an image sensor chip, a sidewall, an encapsulation glass, conductive material, and a plurality of solder balls. The image sensor chip comprises a photosensitive area, a non-photosensitive area surrounding the photosensitive area, and a plurality of bonding pads formed on the non-photosensitive area. The sidewall is located on the non-photosensitive are and defines a plurality of first through holes aligned with and corresponding to the bonding pads. The encapsulation glass is located on the sidewall. A plurality of solder balls are formed on the encapsulation glass aligned with the bonding pads, respectively. The encapsulation glass defines a plurality of second through holes each corresponding to a bonding pad and a corresponding solder ball. The image sensor package further comprises a conductive material through which the first and second through holes penetrate.

Abstract: A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer.

Abstract: Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and an optically transparent layer contacting the polymer layer and covering the cavity.

Abstract: An optical device includes a semiconductor substrate (11) on which a light receiving part (12) (or a light emitting part) and electrodes (13) are formed, and a translucent plate (2) bonded on the light receiving part (12) with a translucent adhesive (5), the semiconductor substrate (11) having a plurality of convex portions (31) formed so as to separate the light receiving part (12) and the electrodes (13) and have proper gaps (32) therebetween.

Abstract: The present invention provides a lighting device package with one or more light-emitting elements operatively coupled to a substrate and a frame disposed at least in part around the one or more light-emitting elements. The frame and substrate define a cavity in which the one or more light-emitting elements are positioned, wherein this cavity can be substantially enclosed by an optically transmissive system. At least a portion of the cavity can be filled with an encapsulation material. The frame defines one or more passageways, wherein each passageway interconnects the cavity with the outside through an outside port. For example, the outside port can be accessible from the ambient when the lighting device package is in an assembled state, thereby enabling fluidic movement of the encapsulation material into and/or out of the cavity.

Abstract: An optical device having following components is disclosed. A semiconductor substrate has an element region formed on its upper side. A light transmitting insulator film covers an element region and has at least one recessed portion located in a region outside the element region. At least one protruding portion is provided in a region on the light transmitting insulator film outside the element region and inside the recessed portion. A light transmitting member covers the element region from above and is provided on the protruding portion. A light transmitting adhesive is filled in between the light transmitting insulator film and the light transmitting member.

Abstract: A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias.

Abstract: An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a photodiode; and then forming a reflective film frame on the photodiode, the reflective film frame having sidewalls that are inclined with respect to the uppermost surface of the photodiode; and then forming an opening over the surface of the reflective film frame and corresponding to the photodiode by forming a reflective film on the sidewalls of the reflective film frame.

Abstract: An image sensor package, a method of manufacturing the same, and an image sensor module including the image sensor package are provided. In the image sensor package, an image sensor chip is installed onto a depression of a transmissive substrate. An adhesive bonds the image sensor chip to the transmissive substrate and seals an Active Pixel Sensor (APS) on the image sensor chip, protecting it from fine particle contamination. An IR cutting film is disposed on the transmissive substrate to minimize the height of the image sensor package. The image sensor package is electrically connected to external connection pads in the depression. Consequently, the image sensor package has a minimum height, is not susceptible to particle contamination, and does not require expensive alignment processes during manufacturing.

Abstract: An image sensor including a first substrate having a first surface intended to be illuminated and a second surface on the side of which is formed a plurality of photodetection areas, said second surface being covered with a stack of interconnect levels including metal layers topped with insulating material, and of a second substrate placed on the insulating material of the last interconnect level, in which are formed vias in contact with connection elements of the interconnect levels, at least one of the interconnect levels including conductive shielding areas aligned with the photodetection areas.

Abstract: A manufacturing method for molding an image sensor package structure and the image sensor package structure thereof are disclosed. The manufacturing method includes following steps of providing a half-finished image sensor for packaging, arranging a dam on the peripheral of a transparent lid of the half-finished image sensor, positioning the half-finished image sensor within a mold, and injecting a mold compound into the mold cavity of the mold. The dam is arranged on the top surface of the transparent lid and the inner surface of the mold can exactly contact with the top surface of dam so that the mold compound injected into the mold cavity is prevented from overflowing to the transparent lid by the dam. Furthermore, the arrangement of the dam and the mold compound can increase packaged areas and extend blockage to invasive moisture so as to enhance the reliability of the image sensor package structure.

Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Abstract: The present invention discloses an image sensor package structure with a large air cavity. The image sensor package structure includes a substrate, a chip, a cover and a package material. The chip is combined with the substrate. A plastic sheet of the cover is adhered to the chip and a transparent lid of the cover is combined with the plastic sheet to provide a covering over a sensitization area of the chip so as to form an air cavity. The package material is arranged on the substrate and encapsulated around the chip and the cover. The plastic sheet having a predetermined thickness can increase the distance between the transparent lid and the chip to enlarge the air cavity. Thus, the image-sensing effect of the image sensor package structure can be improved and the ghost image problem resulting from multi-refraction and multi-reflection of light can be minimized.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: A solid-state image capturing device is provided. In the solid-state image capturing device, at least any of openings of electrode wiring layers, color filters and microlenses are provided on a light incident side above light receiving elements as a light receiving region in which the plurality of light receiving elements are disposed on a semiconductor substrate or a semiconductor region provided on a substrate, wherein a shift amount of at least any of the openings of the electrode wiring layers, the color filters and the microlenses in relation to the light receiving elements or in relation to a standard position where a light flux is desired to pass through is calculated by Snell's law based on an incident angle ?0 of a light flux entering the light receiving region to a surface of the solid-state image capturing device.

Abstract: A semiconductor light receiving device includes a light receiving section made of a semiconductor provided on a substrate, an electrode provided on the substrate and configured to apply an electric field to the light receiving section, a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer, and a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode. At least a portion of the resin layer located in the gap has a light blocking property.

Abstract: A method for fabricating an encapsulant cavity integrated circuit package system includes: forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: A light-emitting diode system (1) comprising at least one light-emitting diode component (2), in which a light-emitting diode chip is arranged in a light-emitting diode housing (21) on a heat sink (22) which can be thermally connected at the rear side (25) of the light-emitting diode housing (21). A carrier plate (3) having a front side (34) and a rear side (31) and a hole for receiving the light-emitting diode component (2) is provided. The light-emitting diode component (2) projects into the hole from the rear side (31) of the carrier plate (3). An electrically insulating thermal connection layer (5) is applied at the rear side (31) of the carrier plate (3), said thermal connection layer being thermally conductively connected to the heat sink (22). A method for producing a light-emitting diode system is also described.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: According to the present invention, protrusions 4 are formed on electrodes 3 of semiconductor elements 6, and an optical member 7 is secured on the semiconductor element 6 with an adhesive 8 so as to be pressed onto the protrusions 4.

Abstract: The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section. An interconnect layer driving the field-effect transistor in the image pickup pixel section is formed on a first surface side of the semiconductor substrate. A light receiving surface of the photoelectric conversion element is located on a second surface side of the semiconductor substrate. The solid-state image pickup device includes a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.

Abstract: An airtight apparatus includes a package and a lid. The lid is bonded to the package and defines an airtight space, together with the package. The lid includes an optical window which allows the passage of optical signals, a holding part which holds the optical window, and a deformable part which is formed on an outer circumferential edge of the holding part and which is able to deform when applied with a load smaller than a load that deforms the holding part.

Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.

Abstract: A solid state imaging device includes: a substrate having an opening portion; a solid state imaging element mounted to the substrate through a flip-chip process; and a resin mold portion formed on a rear surface of the solid state imaging element. The resin mold portion has a surface of an uneven shape.