Responsive To Nonelectrical External Signals (e.g., Light) Patents (Class 257/53)
  • Patent number: 10534951
    Abstract: A fingerprint identification unit and a manufacturing method thereof, an array substrate, a display device and a fingerprint identification method are disclosed, which can realize fingerprint identification without increasing the thickness of the display device. The fingerprint identification unit can include a photosensitive device, a data read-out signal line and a thin film transistor for controlling the switching of the photosensitive device. On the photosensitive device is formed a first insulating layer for insulating the photosensitive device from an OLED luminescent layer, and the part of the OLED luminescent layer corresponding to the photosensitive device does not illuminate. The data read-out signal line can be configured to read out a photocurrent generated by the photosensitive device, and identify fingerprints according to the amount of each photocurrent. The array substrate includes the fingerprint identification unit mentioned in the above technical solution.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: January 14, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rui Xu, Haisheng Wang
  • Patent number: 10527852
    Abstract: Examples are disclosed that relate to the use of diffractive filtering in a waveguide display system. One example provides a display system including a light source, a first waveguide configured to conduct light of a first wavelength band from the light source, the first waveguide comprising a first input coupler, a second waveguide configured to conduct light of a second wavelength band from the light source, the second waveguide comprising a second input coupler, and a diffractive filter positioned optically between the first waveguide and the second waveguide, the diffractive filter being configured to diffract light of the first wavelength band and transmit light of the second wavelength band.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: January 7, 2020
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Lasse Pekka Karvonen, Andreas Langner
  • Patent number: 10488560
    Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: November 26, 2019
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Chung-Jung Hsu, Chin-Chuan Hsieh, Kuo-Feng Lin
  • Patent number: 10468543
    Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: November 5, 2019
    Assignee: W&Wsens Devices, Inc.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
  • Patent number: 10449573
    Abstract: A sorting apparatus is described and which includes a selectively heated avalanche photodiode (APD) which is maintained at a predetermined temperature and which further demonstrates a higher gain and signal-to-noise ratio with greater stability at a predetermined temperature for enhancing sorting efficiency.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: October 22, 2019
    Assignee: Key Technology, Inc.
    Inventors: Johan Calcoen, Peter Stulens
  • Patent number: 10439069
    Abstract: Two gate electrodes are provided on upper and lower sides of an oxide semiconductor active layer through respective insulating films. In addition, a first read-out electrode and a second read-out electrode are provided on right and left sides of the oxide semiconductor active layer. In the optical sensor element, in a case where a voltage is applied to each gate electrode, a potential difference occurs between the first read-out electrode and the second read-out electrode, and intensity of irradiation light is detected based on a current that flows between the read-out electrodes.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: October 8, 2019
    Assignee: NLT TECHNOLOGIES, LTD.
    Inventor: Kazushige Takechi
  • Patent number: 10347776
    Abstract: Disclosed are a back-surface bridge type contact electrode of a crystalline silicon solar battery and a preparation method therefor. The back-surface bridge type contact electrode of a crystalline silicon solar battery includes a local electrode connected to a local back surface field and a back surface electrode which is covered with a back surface passivation film on a contact surface with a silicon wafer substrate, at least one bridge electrode is provided between the local electrode and the back surface electrode, the contact surface of the bridge electrode and the silicon wafer substrate is also covered with the back surface passivation film, the local electrode is connected to the back surface electrode via the bridge electrode, and the back surface passivation film is also provided, besides at the connection region of the bridge electrode, between the local electrode and the back surface electrode.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: July 9, 2019
    Assignee: Trina Solar Co., Ltd.
    Inventors: Yifeng Chen, Pierre J. Verlinden, Zhiqiang Feng, Hui Shen, Pietro P. Altermatt
  • Patent number: 10330800
    Abstract: An X-ray detector includes a direct-conversion converter element and an evaluating unit in a stacked arrangement. In an embodiment, the X-ray detector includes a voltage source, configured to provide a first potential and a second potential different from the first potential; a pulse generating unit for generating voltage pulses; and a connecting unit, for applying the voltage pulses onto the first potential, configured at the output to provide a pulsed potential. In an embodiment, through the application of the pulsed potential to a first surface of the direct-conversion converter element and through the application of the second potential to a second surface of the converter element opposed to the first surface, a pulsed potential difference is formed in the direct-conversion converter element.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: June 25, 2019
    Assignee: SIEMENS HEALTHCARE GMBH
    Inventors: Shameem Kabir Chaudhury, Alfons Eismann, Thorsten Ergler, Thomas Hilderscheid
  • Patent number: 10320627
    Abstract: This invention provides a cooperative coverage method for distribution network information perception. The cooperative coverage method includes the following steps: construction of connected cooperative coverage sets, which can cover all target nodes with as few information perception nodes as possible, and maintain the connectivity of each cooperative coverage set with connected sets construction methods based on of hierarchical clustering; Cooperative coverage set scheduling, introducing the concept of energy ratio threshold, dividing the life cycle of the system into multiple time slices, calculating the energy ratio of perception device set in each time slice to realize the set scheduling. The invention realizes the efficient utilization of the energy of the perception device through the construction and scheduling of the connected coverage set in different time slices, and improves the use efficiency of the information perception network.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: June 11, 2019
    Assignees: STATE GRID JIANGSU ELECTRIC POWER COMPANY NANJING POWER SUPPLY COMPANY, STATE GRID JIANGSU ELECTRIC POWER COMPANY, STATE GRID COMPANY CORPORATION OF CHINA, STATE GRID INFORMATION & TELECOMMUNICATION GROUP CO., LTD
    Inventors: Lei Wei, Min Lu, Qinghai Ou, Zhu Liu, Shaoyong Guo, Wei Xu, Dong Yan, Shaojun Liu, Xinjian Zhao, Wei Li, Lisha Gao
  • Patent number: 10297625
    Abstract: A photoelectric conversion device includes a blocking unit located between a photoelectric conversion layer and a second electrode unit and configured to cause electric charge having a first polarity to be injected from the photoelectric conversion layer into the second electrode unit and to prevent electric charge having a second polarity opposite to the first polarity from being injected from the photoelectric conversion layer into the second electrode unit, and a voltage supply unit configured to supply a second voltage to one of a first electrode unit and the second electrode unit such that electric charge having the first polarity is prevented from being injected from the photoelectric conversion layer into the second electrode unit.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: May 21, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Kazuaki Tashiro
  • Patent number: 10217878
    Abstract: Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: February 26, 2019
    Assignee: SunPower Corporation
    Inventors: Kieran Mark Tracy, David D. Smith, Venkatasubramani Balu, Asnat Masad, Ann Waldhauer
  • Patent number: 10192892
    Abstract: A device includes a backplane having multiple output terminals arranged in an array on an output surface of the backplane. The device further includes an active matrix array comprising thin film solid state optical switches coupled respectively between an input terminal of the backplane and the output terminals. Storage capacitors may be coupled respectively to the output terminals. A pixelated light source provides pixelated light that controls the optical switches.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: January 29, 2019
    Assignee: Palo Alto Research Center Incorporated
    Inventors: JengPing Lu, David K. Biegelsen, Patrick Yasuo Maeda
  • Patent number: 10134940
    Abstract: A method of manufacturing a solar cell includes: forming a solar cell substrate having one main surface and the other main surface and having a p-type surface and an n-type surface which are exposed on one region and another region in the one main surface, respectively; forming seed layers in an electrically separated state on the p-type surface and the n-type surface, respectively; and forming a plated film on the seed layer on each of the p-type surface and the n-type surface by an electrolytic plating method.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: November 20, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Ryo Goto, Daisuke Ide, Mitsuaki Morigami, Youhei Murakami
  • Patent number: 10032948
    Abstract: A solar battery module is provided with a plurality of solar cells, a wiring material for connecting adjacent solar cells in the longitudinal directors to form strings, and a reflective body disposed on the rear-surface side of the solar cells, said body reflecting at least some incident light toward the solar cells. In the solar battery module, the strings are multiply disposed in the horizontal direction to constitute string groups, intervals D20 between adjacent strings being formed wider in the longitudinal center section of the string groups than in the longitudinal end sections.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: July 24, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Kei Nakamura, Isao Hasegawa
  • Patent number: 9991305
    Abstract: The present invention reduces the leakage of the electric charge, which occurs at an end of a pixel electrode. An imaging apparatus includes: a plurality of pixel electrodes arranged separately from each other; an insulating film arranged on the pixel electrode; a pixel isolating film of an insulating member arranged between the pixel electrodes; and a photoelectric conversion film arranged on the insulating film, wherein the pixel isolating film contacts the pixel electrode.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: June 5, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tatsuhito Goden, Nobuhiko Sato
  • Patent number: 9976897
    Abstract: A radiation imaging apparatus includes a radiation detection panel configured to detect radiation irradiated by a radiation generation unit, a first member and second member arranged on the incident direction side of the radiation, and a third member and fourth member arranged on a side opposite to the incident direction of the radiation. The second member is arranged between the first member and the radiation detection panel, and the third member is arranged between the radiation detection panel and the fourth member. The second member and the third member are lower in elastic modulus than the first member and the fourth member, and the elastic modulus of the second member is equal to or lower than that of the third member.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: May 22, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Masataka Suzuki
  • Patent number: 9947822
    Abstract: One embodiment of the present invention provides a bifacial solar panel. The bifacial solar panel includes a first transparent cover on a first side of the solar panel, a second transparent cover on a second side of the solar panel, a plurality of solar cells sandwiched between the first cover and the second cover, and one or more lead wires for outputting power generated by the solar panel. The lead wires are positioned on an edge of the solar panel without shading the first and second sides of the solar panel. A respective solar cell comprises a photovoltaic structure, a first metal grid on the first side of the photovoltaic structure, which allows the solar cell to absorb light from the first side, and a second metal grid on the second side of the photovoltaic structure, which allows the solar cell to absorb light from the second side.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: April 17, 2018
    Assignee: Tesla, Inc.
    Inventors: Jiunn Benjamin Heng, Christoph Erben, Bobby Yang
  • Patent number: 9933303
    Abstract: A radiation imaging apparatus includes a radiation detection panel configured to detect radiation irradiated by a radiation generation unit, a first member and second member arranged on the incident direction side of the radiation, and a third member and fourth member arranged on a side opposite to the incident direction of the radiation. The second member is arranged between the first member and the radiation detection panel, and the third member is arranged between the radiation detection panel and the fourth member. The second member and the third member are lower in elastic modulus than the first member and the fourth member, and the elastic modulus of the second member is equal to or lower than that of the third member.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: April 3, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Masataka Suzuki
  • Patent number: 9871084
    Abstract: An organic light-emitting display device includes a first substrate, a second substrate, a sealing adhesive layer, an organic light-emitting device and a touch sensing device. The first substrate and the second substrate are disposed opposite to each other. The sealing adhesive layer is disposed between the first substrate and the second substrate in a peripheral region. The organic light-emitting device is disposed on the second substrate in a display region, and the sealing adhesive layer surrounds the organic light-emitting device. The touch sensing device is disposed on the first substrate and includes a touch sensing electrode array and a plurality of sensing wires electrically connected to the touch sensing electrode array, respectively, and the sensing wires are disposed along the peripheral region at at least one side of the display region and over the sealing adhesive layer.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: January 16, 2018
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Po-Sheng Liao, Chia-Yuan Yeh
  • Patent number: 9859305
    Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: January 2, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung Bin Chung, Bo Geon Jeon, Eun Jeong Cho, Tae Young Ahn, Woo Seok Jeon, Sung Hoon Yang
  • Patent number: 9825079
    Abstract: A photoelectric conversion device includes a photoelectric conversion unit disposed above a substrate and a reading circuit. The photoelectric conversion unit includes a first electrode disposed above the substrate, a second electrode disposed above the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The second electrode includes an opening, and is disposed in contact with the photoelectric conversion film at a boundary between adjacent photoelectric conversion units. An insulating film is disposed in contact with the second electrode.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: November 21, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Ryoki
  • Patent number: 9685563
    Abstract: A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: June 20, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Toshihiko Takeuchi, Yasumasa Yamane, Masashi Oota
  • Patent number: 9678370
    Abstract: A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: June 13, 2017
    Assignees: IMEC VZW, Universiteit Gent
    Inventors: Yu Hui, Wim Bogaerts
  • Patent number: 9575025
    Abstract: There is provided an electrolyte solution including a solvent formed from a sulfone, and a magnesium salt dissolved in the solvent.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: February 21, 2017
    Assignee: SONY CORPORATION
    Inventors: Yuri Nakayama, Hideki Kawasaki, Hiroyuki Morioka
  • Patent number: 9570637
    Abstract: A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type on the back surface; a second semiconductor layer of the second conductivity type on the back surface; a first electrode electrically connected to the first semiconductor layer; and an insulating layer for electrically insulating the first semiconductor layer and the second semiconductor layer from each other in a region in which an edge of the first semiconductor layer and an edge of second semiconductor layer overlap. The first electrode includes a first transparent electrode layer and a first collection electrode layer on the first transparent electrode layer. The first transparent electrode layer is separated into a primary electrode layer that is on the first semiconductor layer and a separated electrode layer that is on the second semiconductor layer in the region.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: February 14, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Naoteru Matsubara, Taiki Hashiguchi
  • Patent number: 9570495
    Abstract: A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: February 14, 2017
    Assignee: SONY CORPORATION
    Inventors: Atsushi Toda, Teruo Hirayama
  • Patent number: 9525071
    Abstract: A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: December 20, 2016
    Assignee: Massachusetts Institute of Technology
    Inventors: Melissa Alyson Smith, Akintunde I. Akinwande
  • Patent number: 9425341
    Abstract: According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: August 23, 2016
    Assignee: Agency for Science, Technology and Research
    Inventors: Andy Eu-Jin Lim, Tsung-Yang Liow, Patrick Guo-Qiang Lo
  • Patent number: 9419154
    Abstract: The disclosed technology generally relates to photovoltaic devices and methods of fabricating photovoltaic devices, and more particularly relates to interdigitated back contact photovoltaic cells and methods of fabricating the same. In one aspect, a method of forming first and second interdigitated electrodes on a semiconductor substrate comprises providing a dielectric layer on the rear surface of the semiconductor substrate. The method additionally comprises providing a metal seed layer on the dielectric layer. The method additionally comprises patterning the metal seed layer by laser ablation, thereby separating it into a first seed layer and a second seed layer with a separation region interposed therebetween, wherein the first seed layer and the second seed layer are interdigitated and electrically isolated from each other. The method further comprises thickening the first seed layer and the second seed layer by plating, thereby forming the first electrode and the second electrode.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: August 16, 2016
    Assignee: IMEC
    Inventors: Bartlomiej Jan Pawlak, Bartlomiej Sojka
  • Patent number: 9305861
    Abstract: A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the chip and the chip package have at least one such converter physically disposed on them. Each converter is able to (1) convert received electromagnetic signals into electronic signals, which it then may relay to leads on the device on which it is disposed; and (2) receive electronic signals from leads on the device on which it is disposed and convert them into corresponding electromagnetic signals, which it may transmit to a corresponding converter on the other device. Not having a direct physical connection between the chip and the chip package decreases the inductive and capacitive effects commonly experienced with physical bonds.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: April 5, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Tim Murphy, Lee Gotcher
  • Patent number: 9196758
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: November 24, 2015
    Assignee: SunPower Corporation
    Inventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Venkatasubramani Balu
  • Patent number: 9190446
    Abstract: A sensing apparatus that includes a plurality of sensing pixels is provided. The sensing pixels are arranged in an array, and each of the sensing pixels includes an active device and a sensing device. The sensing device is electrically connected to the active device, and the sensing device includes a first electrode layer, an amorphous silicon layer, a second electrode layer, and a graphene layer. The amorphous silicon layer is located on the first electrode layer. The second electrode layer is located on the amorphous silicon layer and has an opening. The graphene layer is in contact with the second electrode layer and the amorphous silicon layer.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: November 17, 2015
    Assignee: Au Optronics Corporation
    Inventors: Tsung-Han Chen, Chin-Mao Lin
  • Patent number: 9159500
    Abstract: A photoelectric conversion element (100) according to the present disclosure includes: a photoanode (15); a counter electrode (32); a solid compound layer (22) disposed between the photoanode (15) and the counter electrode (32); a charge storage electrode (55) disposed at an interspace from the counter electrode (32); and an electrolyte medium (24) being contained in the solid compound layer (22) and filling the interspace.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: October 13, 2015
    Assignee: Panasonic Corporation
    Inventors: Michio Suzuka, Takashi Sekiguchi, Naoki Hayashi, Hiroyuki Nishide, Kenichi Oyaizu, Fumiaki Kato
  • Patent number: 9142583
    Abstract: Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: September 22, 2015
    Assignee: Maxchip Electronics Corp.
    Inventors: Jin-Wei Chang, Hung-Lung Wang, Jung-Kai Hung, Wei-Chi Su
  • Patent number: 9136422
    Abstract: Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: September 15, 2015
    Assignee: ALTA DEVICES, INC.
    Inventors: Gregg Higashi, Brendan M. Kayes, Frank Reinhardt, Sylvia Spruytte
  • Patent number: 9117918
    Abstract: A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor includes providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart source/drain metal contacts define a channel region in the active layer. An oxidizing ambient is provided adjacent the channel region and the gate and the channel region are heated in the oxidizing ambient to reduce the carrier concentration in the channel area. Alternatively or in addition each of the source/drain contacts includes a very thin layer of low work function metal positioned on the metal oxide semiconductor active layer and a barrier layer of high work function metal is positioned on the low work function metal.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: August 25, 2015
    Assignee: CBRITE Inc.
    Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong
  • Patent number: 9070822
    Abstract: The method disclosed herein includes a first step of forming an i-type amorphous silicon layer 16 and an n-type amorphous silicon layer 14 on a light-receiving surface of an n-type monocrystalline silicon substrate 18; a second step of forming an i-type amorphous silicon layer 22a and an n-type amorphous silicon layer 23a on a backside surface of the n-type monocrystalline silicon substrate 18; and a third step of forming, after completion of the first step and the second step, an antireflection layer 12 on the n-type amorphous silicon layer 14, and subsequently forming an insulating layer 24a on the n-type amorphous silicon layer 23a.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: June 30, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yutaka Kirihata, Taiki Hashiguchi
  • Patent number: 9054260
    Abstract: There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: June 9, 2015
    Inventor: Takehisa Konda
  • Patent number: 9041132
    Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: May 26, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
  • Patent number: 9029856
    Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: May 12, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Timothy A. Quick, Stefan Uhlenbrock, Eugene P Marsh
  • Publication number: 20150115270
    Abstract: An encapsulated sensors and methods of manufacture are disclosed herein. The method includes forming an amorphous or polycrystalline material in contact with a layer of seed material. The method further includes forming an expansion space for the amorphous or polycrystalline material. The method further includes forming an encapsulation structure about the amorphous or polycrystalline material. The method further includes crystallizing the amorphous or polycrystalline material by a thermal anneal process such that the amorphous or polycrystalline material expands within the expansion space.
    Type: Application
    Filed: October 31, 2013
    Publication date: April 30, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, William J. MURPHY, Kirk D. PETERSON, Steven M. SHANK
  • Patent number: 9012918
    Abstract: The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: April 21, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takayuki Abe, Hideaki Shishido
  • Publication number: 20150102207
    Abstract: A display device includes a pixel which includes a first photosensor portion having a first photodiode for detecting visible light, which is provided together with a display element portion; and a pixel which includes a second photosensor portion having a second photodiode for detecting infrared rays, which is provided together with another display element portion. The second photosensor portion detects infrared rays included in external light, and selects an imaging element and adjusts sensitivity in accordance with the amount of infrared rays detected by the second photosensor portion.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 16, 2015
    Inventors: Yoshiyuki KUROKAWA, Takayuki IKEDA, Hikaru TAMURA
  • Patent number: 8994025
    Abstract: The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: March 31, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sang-Youn Han, Jun-Ho Song, Kyung-Sook Jeon, Mi-Seon Seo, Sung-Hoon Yang, Suk-Won Jung, Seung Mi Seo
  • Patent number: 8987738
    Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: March 24, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takashi Hirose, Naoto Kusumoto
  • Publication number: 20150063543
    Abstract: A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process.
    Type: Application
    Filed: September 1, 2014
    Publication date: March 5, 2015
    Inventors: Seung-hyup LEE, Sun-il KIM, Young KIM, Chang-jung KIM
  • Patent number: 8969986
    Abstract: An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 3, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Daniel Yap, Rajesh D. Rajavel, Sarabjit Mehta, Hasan Sharifi
  • Patent number: 8969877
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: March 3, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Patent number: 8963270
    Abstract: A method for fabricating thin film solar cells for a concentrated photovoltaic system uses three shadow masks. The first mask, used to deposit a back contact layer, has multiple horizontal and vertical lines defining columns and rows of cells, and multiple tabs each located in a cell along a center of a vertical border. The second mask, used to deposit a CIGS absorption layer, a window layer and a transparent contact layer, is similar to the first mask except the tabs are located along the opposite vertical border of the cells. The third mask, used to deposit a metal grid layer, has multiple bus bar openings and finger openings. Each bus bar opening is located along a horizontal center line of a cell and overlaps the second tab of a neighboring cell. The cells in a horizontal row are connected in series, forming a linear solar receiver.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: February 24, 2015
    Assignee: Pu Ni Tai Neng (HangZhou) Co., Limited
    Inventors: Dong Wang, Pingrong Yu, Xuegeng Li
  • Publication number: 20150048374
    Abstract: A light sensor and a manufacturing method thereof are disclosed. The light sensor is capable of being coupled to a carry object and includes a sensing chip and a plurality of conductive connecting elements. The sensing chip includes a first surface and a second surface opposite to each other. The sensing chip also includes a sensing unit disposed between the first surface and the second surface and at least partially exposed by a window formed on the second surface. The first surface faces the carry object when the light sensor is coupled to a carry object. The conductive connecting elements are disposed on the first surface and coupled to the sensing unit in order to couple the light sensor to the carry object.
    Type: Application
    Filed: June 16, 2014
    Publication date: February 19, 2015
    Inventor: Ping-Yuan Lin