Manufacture Or Post-treatment Of Electrode Having A Capacitive Structure, I.e., Gate Structure For Field-effect Device (epo) Patents (Class 257/E21.176)
E Subclasses
- Joint-gate structure (EPO) (Class 257/E21.178)
- Floating or plural gate structure (EPO) (Class 257/E21.179)
- Gate structure with charge-trapping insulator (EPO) (Class 257/E21.18)
- On semiconductor body not comprising Group IV element, e.g., Group III-V compound (EPO) (Class 257/E21.181)
- On semiconductor body comprising Group IV element excluding non-elemental Si, e.g., Ge, C, diamond, silicon compound or compound, such as SiC or SiGe (EPO) (Class 257/E21.182)
- For charge-coupled device (EPO) (Class 257/E21.183)