Abstract: A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least first and second bottom portions laterally adjacent to one another. Each bottom portion has a concave shape with a ridge formed between the first and second bottom portions. An insulating material covers the sidewall and first bottom portion of the trench structure while leaving the second bottom portion uncovered. A mesa region extends to the first side of the substrate and forms the sidewall of the trench structure. The device also includes a first silicide layer on a top region of the mesa region, a second silicide layer on the second bottom portion of the trench structure, a first metal layer on and in contact with the first silicide layer, and a second metal layer on and in contact with the second silicide layer.

Abstract: A dynamic random access memory (DRAM) device includes a memory cell array including a first sub memory cell array block including a plurality of first memory cells between a plurality of first sub word lines, and a plurality of first odd-numbered bit lines and a plurality of dummy bit lines and includes a second sub memory cell array block including a plurality of second memory cells between a plurality of second sub word lines, a plurality of second odd-numbered bit lines, and a plurality of second even-numbered bit lines. The memory cell array may be arranged to have an open bit line architecture in which the plurality of first odd-numbered bit lines and the plurality of second even-numbered bit lines form bit line pairs.

Abstract: A semiconductor device including an isolation insulating film having a first thickness that is located between a drain region and a source region; a gate electrode formed over a region located between the isolation insulating film and the source region and that includes a part serving as a channel; an interlayer insulating film formed so as to cover the gate electrode; and a contact plug formed to reach the inside of the isolation insulating film while penetrating the interlayer insulating film, wherein the contact plug includes a buried part that is formed from the surface of the isolation insulating film up to a depth corresponding to a second thickness thinner than the first thickness.

Abstract: A capacitor includes a plurality of first electrode layers stacked in a first direction, a first conductor extending in the first direction through the plurality of first electrode layers, and a first insulating layer extending in the first direction along the first conductor and located between the first conductor and the plurality of first electrode layers. The capacitor includes a first capacitance provided between the first conductor and the plurality of first electrode layers.

Abstract: An object of the present invention is to further improve electric characteristics such as ON-resistance or an ON-breakdown voltage in a semiconductor device having a lateral MOS transistor. In a semiconductor device having a lateral MOS transistor, a buried electrode is formed at a part of an isolation insulating film located between a drain region and a gate electrode. The buried electrode includes a buried part. The buried part is formed from the surface of the isolation insulating film up to a depth corresponding to a thickness thinner than that of the isolation insulating film. The buried electrode is electrically coupled to the drain region.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a first metal layer, a peripheral circuit configured to control the memory cell array, a second metal layer, and a pad. The first metal layer is disposed on the memory cell array and includes a plurality of cell region interconnections connected to the memory cell array. The second metal layer is disposed on the peripheral circuit and includes a plurality of peripheral region interconnections connecting the peripheral circuit and the plurality of cell region interconnections. The pad is disposed on the second metal layer and exchanges data, an address, or a command with the peripheral circuit during operation of the device. The second metal layer is lower than the first metal layer relative to a substrate of the device.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a plurality of conductive lines filled in the trenches, forming contact holes by removing first portions of the isolation patterns, wherein the contact holes are defined by the plurality of conductive lines and second portions of the isolation patterns that remain after removing of the first portions of the isolation patterns, and forming plugs filled in the contact holes.

Abstract: A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the diele

Abstract: Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a plurality of conductive lines filled in the trenches, forming contact holes by removing first portions of the isolation patterns, wherein the contact holes are defined by the plurality of conductive lines and second portions of the isolation patterns that remain after removing of the first portions of the isolation patterns, and forming plugs filled in the contact holes.

Abstract: A vertical channel transistor array includes a plurality of embedded bit lines, a plurality of bit line contacts, a plurality of embedded word lines, and a current leakage isolation structure. An active area of a vertical channel transistor is defined by the semiconductor pillars. The embedded bit lines are disposed in parallel in a semiconductor substrate and extended in a column direction. Each of the bit line contacts is respectively disposed at a side of one of the embedded bit lines. The embedded word lines are disposed in parallel above the embedded bit lines and extended in a row direction. Besides, the embedded word lines and the semiconductor pillars in the same row are connected but spaced by a gate dielectric layer. The current leakage isolation structure is disposed at ends of the embedded bit lines to prevent current leakage between the adjacent bit line contacts.

Abstract: In a method of fabricating a semiconductor device, isolation structures are formed in a substrate to define active regions. Conductive structures are formed on the substrate to cross over at least two of the active regions and the isolation structures, the conductive structures extending in a first direction. An interfacial layer is conformally formed on the substrate in contact with the conductive structures. A first insulation layer is provided on the interfacial layer, wherein the first insulation layer is formed using a flowable chemical vapor deposition (CVD) process, and wherein the interfacial layer reduces a tensile stress generated at an interface between the conductive structures and the first insulation layer while the first insulation layer is formed.

Abstract: A semiconductor memory includes: a plurality of active regions AAi, AAi?1, . . . , AAn, which extend on a memory cell array along the column length; a plurality of non-uniformly arranged word line patterns WL1, WL2, . . . , extending along the row length; a plurality of select gate line patterns SG1, SG2, . . . , arranged parallel to the plurality of word line patterns; borderless contacts formed near the ends of the word line patterns on the memory cell array, in contact with part of an interconnect extended from the end of the memory cell array, but not in contact with interconnects adjacent to that interconnect; and bit line contacts formed within contact forming regions provided by removing part of the plurality of word line patterns and select gate line patterns through double exposure.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers.

Abstract: Provided is a semiconductor device having bit line expanding islands, which are formed underneath bit lines to reliably expand and connect the bit lines.

Abstract: A semiconductor device, including a semiconductor substrate including isolations defining active regions of the semiconductor substrate, a plurality of buried gate electrodes extending below an upper surface of the semiconductor device, and a plurality of bit lines extending along a first direction over the semiconductor substrate, wherein the plurality of bit lines are connected to corresponding ones of the active regions of the semiconductor substrate, and at least a portion of the bit lines extend along a same and/or substantially same plane as an upper surface of the corresponding active region to which it is connected.

Abstract: A semiconductor device includes groove-like regions that are formed between two adjacent bit lines among a plurality of bit lines each having upper and side surfaces covered with a cap insulating film and a side-wall insulating film, respectively, a SiON film that contains more O (oxygen) than N (nitrogen) and continuously covers inner surfaces of the groove-like regions, and a silicon dioxide film formed by reforming polysilazane and filled in the groove-like regions with the SiON film interposed therebetween.

Abstract: A method for fabricating buried bit lines comprises steps of: defining a plurality of parallel masked regions and a plurality of first etched regions each forming between any two neighboring masked regions on a surface of a substrate, and wherein the masked region is wider than the first etched region; etching the first etched regions to form a plurality of first trenches and a plurality of first pillars; forming two bit lines respectively on two sidewalls of each first trench; etching the first pillars to form a plurality of second pillars corresponding to the bit lines. The present invention uses a two-stage etching process to prevent pillars from bending or collapsing due to high aspect ratio. Moreover, the present invention has a simple process and is able to reduce cost and decrease cell size.

Abstract: A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials.

Abstract: A semiconductor device has a bit line interconnection with a greater width and a reduced level on a bit line contact is provided, as are methods of fabricating such devices. These method includes forming a buried gate electrode to intersect an active region of a substrate. Source and drain regions are formed in the active region. A first conductive pattern is formed on the substrate. The first conductive pattern has a first conductive layer hole configured to expose the drain region. A second conductive pattern is formed in the first conductive layer hole to contact the drain region. A top surface of the second conductive pattern is at a lower level than a top surface of the first conductive pattern. A third conductive layer and a bit line capping layer are formed on the first conductive pattern and the second conductive pattern and patterned to form a third conductive pattern and a bit line capping pattern.

Abstract: The present invention provides an apparatus and method for a non-volatile memory comprising at least one array of memory cells with shallow trench isolation (STI) regions between bit lines for increased process margins. Specifically, in one embodiment, each of the memory cells in the array of memory cells includes a source, a control gate, and a drain, and is capable of storing at least one bit. The array of memory cells further includes word lines that are coupled to control gates of memory cells. The word lines are arranged in rows in the array. In addition, the array comprises bit lines coupled to source and drains of memory cells. The bit lines are arranged in columns in the array. Also, the array comprises at least one row of bit line contacts for providing electrical conductivity to the bit lines. Further, the array comprises shallow trench isolation (STI) regions separating each of the bit lines along the row of bit line contacts.

Abstract: Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

Abstract: A semiconductor device includes an active region having a sidewall, which has a sidewall step, a junction formed under a surface of the sidewall step, and a buried bit line configured to contact the junction.

Abstract: To provide an active region having first and second diffusion layers positioned at both sides of a gate trench and a third diffusion layer formed on a bottom surface of the gate trench, first and second memory elements connected to the first and second diffusion layers, respectively, a bit line connected to the third diffusion layer, a first gate electrode that covers a first side surface of the gate trench via a gate dielectric film and forms a channel between the first diffusion layer and the third diffusion layer, and a second gate electrode that covers a second side surface of the gate trench via a gate dielectric film and forms a channel between the second diffusion layer and the third diffusion layer. According to the present invention, because separate transistors are formed on both side surfaces of a gate trench, two times of conventional integration can be achieved.

Abstract: A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns.

Abstract: A nonvolatile semiconductor memory device includes: a substrate; a stacked body with a plurality of dielectric films and electrode films alternately stacked therein, the stacked body being provided on the substrate and having a step in its end portion for each of the electrode films; an interlayer dielectric film burying the end portion of the stacked body; a plurality of semiconductor pillars extending in the stacking direction of the stacked body and penetrating through a center portion of the stacked body; a charge storage layer provided between one of the electrode films and one of the semiconductor pillars; and a plug buried in the interlayer dielectric film and connected to a portion of each of the electrode films constituting the step, a portion of each of the dielectric films in the center portion having a larger thickness than a portion of each of the dielectric films in the end portion.

Abstract: A method for manufacturing a semiconductor device is disclosed. A method for manufacturing a semiconductor device includes forming a device isolation structure for defining an active region, forming a buried word line traversing the active region, forming one or more insulation film patterns over the buried word line, forming a line pattern including a first conductive material at a position between the insulation film patterns, and forming a plurality of storage node contacts (SNCs) by isolating the line pattern. As a result, when forming a bit line contact and a storage node contact, a fabrication margin is increased.

Abstract: A semiconductor device includes groove-like regions that are formed between two adjacent bit lines among a plurality of bit lines each having upper and side surfaces covered with a cap insulating film and a side-wall insulating film, respectively, a SiON film that contains more O (oxygen) than N (nitrogen) and continuously covers inner surfaces of the groove-like regions, and a silicon dioxide film formed by reforming polysilazane and filled in the groove-like regions with the SiON film interposed therebetween.

Abstract: Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode including metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate, and forming a plurality of one-sidewall contact plugs which fill the second trenches.

Abstract: A method for fabricating a semiconductor device includes forming an interlayer dielectric layer over a substrate; forming a dual storage node contact plug to be buried in the interlayer dielectric layer, forming a first damascene pattern to isolate the dual storage node contact plug, forming a protective layer pattern inside the first damascene pattern, etching the interlayer dielectric layer to form a second damascene pattern to be coupled to the first damascene pattern, and forming bit lines inside the first and second damascene patterns.

Abstract: Borderless contacts for word lines or via contacts for bit lines are formed using interconnect patterns, a part of which is removed. A semiconductor memory includes: a plurality of active regions AAi, AAi+1, . . . , AAn, which extend on a memory cell array along the column length; a plurality of word line patterns WL1, WL2, . . . , extend along the row length and are non-uniformly arranged; a plurality of select gate line patterns SG1, SG2, . . . , are arranged parallel to the plurality of word line patterns; borderless contacts are formed near the ends of the word line patterns on the memory cell array, and are in contact with part of an interconnect extended from the end of the memory cell array, but are not in contact with interconnects adjacent to that interconnect; and bit line contacts are formed within contact forming regions provided by removing part of the plurality of word line patterns and select gate line patterns through double exposure.

Abstract: A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns.

Abstract: To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact hiving a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.

Abstract: In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a semiconductor substrate including a plurality of pillars arranged spaced apart from one another, and each of the pillars includes a body portion and a pair of pillar portions extending from the body portion and spaced apart from each other. A gate electrode is formed to surround each of the pillar portions. A bitline is disposed on the body portion to penetrate a region between a pair of the pillar portions of each of the first pillars arranged to extend in a first direction. A wordline is disposed over the bitline, arranged to extend in a second direction intersecting the first direction, and configured to contact the side surface of the gate electrode. A first doped region is formed in the upper surface of each of the pillar portions of the pillar.

Abstract: Semiconductor devices with an improved overlay margin and methods of manufacturing the same are provided. In one aspect, a method includes forming a buried bit line in a substrate; forming an isolation layer in the substrate to define an active region, the isolation layer being parallel to the bit line without overlapping the bit line; and forming a gate line including a gate pattern and a conductive line by forming the gate pattern in the active region and forming a conductive line that extends at a right angle to the bit line across the active region and is electrically connected to the gate pattern disposed thereunder. The gate pattern and the conductive line can be integrally formed.

Abstract: A memory device includes a number of memory cells and a number of bit lines. Each of the bit lines includes a first region having a first width and a first depth and a second region having a second width and a second depth, where the first width is less than the second width. The first region may include an n-type impurity and the second region may include a p-type impurity.

Abstract: A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on/off current ratio. The method is able to modify the threshold voltage, breakdown voltage, and on/off current ratio of the MSM diode in response to controlling the Si semiconductor layer thickness. Generally, both the threshold and breakdown voltage are increased in response to increasing the Si thickness. With respect to the on/off current ratio, there is an optimal thickness. The method is able to form an amorphous Si (a-Si) and polycrystalline Si (polySi) semiconductor layer using either chemical vapor deposition (CVD) or DC sputtering. The Si semiconductor can be doped with a Group V donor material, which decreases the threshold voltage and increases the breakdown voltage.

Abstract: Memory devices having improved BVdss characteristics and methods of making the memory devices are provided. The memory devices contain bitline dielectrics on bitlines of a semiconductor substrate; first spacers adjacent the side surfaces of the bitline dielectrics and on the upper surface of the semiconductor substrate; a trench in the semiconductor substrate between the first spacers; and second spacers adjacent the side surfaces of the trench. By containing the trench and the first and second spacers between the bitlines, the memory device can improve the electrical isolation between the bitlines, thereby preventing and/or mitigating bitline-to-bitline current leakage and increasing BVdss.

Abstract: A structure and method of forming a body contact for a semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the set of mandrels arranged on a different corner of a polygon and extending above the top surface of the substrate, a number of mandrels in the set of mandrels equal to a number of corners of the polygon; forming sidewall spacers on sidewalls of each mandrel of the set of mandrels, sidewalls spacers of each adjacent pair of mandrels merging with each other and forming a unbroken wall defining an opening in an interior region of the polygon, a region of the substrate exposed in the opening; etching a contact trench in the substrate in the opening; and filling the contact trench with an electrically conductive material to form the contact.

Abstract: A method of a fabricating a bitline in a semiconductor device, comprising: forming an interlayer insulation layer that defines a bitline contact hole on a semiconductor substrate; forming a contact layer to fill the bitline contact hole; forming a bitline contact by planarizing the contact layer; forming a bitline stack aligned with the bitline contact; forming a high aspect ratio process (HARP) layer that extends along the bitline stack and the interlayer insulation layer while covering a seam exposed in a side portion of the bitline stack by excessive planarization during formation of the bitline contact; and forming an interlayer gap-filling insulation layer on the HARP layer that gap-fills the entire bitline stack.

Abstract: Provided is a method for manufacturing a semiconductor device having a 4F2 transistor. In the method, a gate stack is formed on a semiconductor substrate. A first interlayer dielectric including a contact hole which includes a first region and second regions Spacer layers are formed on both sides of the gate stack and a portion of the second region. Landing plugs are formed on the contact hole, a portion of the semiconductor substrate exposed by a thickness of the spacer layer, and a lateral side of the trench. A second interlayer dielectric is formed to separate the landing plug. The bit line contact plug is connected to a first portion of the landing plug that extends to the lateral side of the trench. The bit line stack is connected to the bit line contact plug. The storage node contact plug is connected to the first portion and a second portion of the landing plug located at a corresponding position in a diagonal direction.

Abstract: A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions.

Abstract: Electromechanical non-volatile memory devices are provided including a semiconductor substrate having an upper surface including insulation characteristics. A first electrode pattern is provided on the semiconductor substrate. The first electrode pattern exposes portions of a surface of the semiconductor substrate therethrough. A conformal bit line is provided on the first electrode pattern and the exposed surface of semiconductor substrate. The bit line is spaced apart from a sidewall of the first electrode pattern and includes a conductive material having an elasticity generated by a voltage difference. An insulating layer pattern is provided on an upper surface of the bit line located on the semiconductor substrate. A second electrode pattern is spaced apart from the bit line and provided on the insulating layer pattern. The second electrode pattern faces the first electrode pattern. Related methods are also provided.

Abstract: A semiconductor memory device includes a silicon pillar, a gate electrode covering a side surface of the silicon pillar via a gate insulation film, diffusion layers (11, 12) provided in a lower part and an upper part, respectively of the silicon pillar, a bit line connected to the diffusion layer (11), and a memory element connected to the diffusion layer (12). The bit line includes a silicon material region in contact with the diffusion layer (11), and a low-resistance region including a material having lower electric resistance than that of the silicon material region. As a result, the resistance of the bit line embedded in the substrate can be decreased.

Abstract: Borderless contacts for word lines or via contacts for bit lines are formed using interconnect patterns, a part of which is removed. A semiconductor memory includes: a plurality of active regions AAi, AAi+1, . . . , AAn, which extend on a memory cell array along the column length; a plurality of word line patterns WL1, WL2, . . . , extend along the row length and are non-uniformly arranged; a plurality of select gate line patterns SG1, SG2, . . . , are arranged parallel to the plurality of word line patterns; borderless contacts are formed near the ends of the word line patterns on the memory cell array, and are in contact with part of an interconnect extended from the end of the memory cell array, but are not in contact with interconnects adjacent to that interconnect; and bit line contacts are formed within contact forming regions provided by removing part of the plurality of word line patterns and select gate line patterns through double exposure.

Abstract: During first portion of a first read cycle determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a second input of the sense amplifier during the first portion. A plurality of NAND string modules are connected to a global bit line of a memory device that includes a memory column where a plurality of NAND strings and a buffer are formed.

Abstract: A spatial light modulator is fabricated by bonding a capping layer over a wafer bearing active reflecting surfaces utilizing a low temperature bonding agent capable of providing a hermetic seal, such as a glass frit. The low temperature bonding agent may be B-stage cured after application to the capping layer, prior to any exposure to the substrate bearing the reflecting surfaces. In accordance with one embodiment of the present invention, the capping layer may comprise a glass wafer pre-bonded with an interposer spacer layer to provide sufficient stand-off between the capping layer and the underlying reflecting structures. In accordance with an alternative embodiment of the present invention, the capping layer may comprise a glass wafer alone, and the bonding agent may include additional materials such as beads or balls to provide the necessary stand-off between the capping layer and the underlying reflective structures.

Abstract: The present invention is a method for manufacturing a semiconductor apparatus including a chip which is fabricated in large numbers on a wafer and has a plurality of information blocks. In the method, a unique information bit is written in a chip discrimination block of each chip within a shot, which is a segmented region of the wafer, by a fixed pattern method. In addition, an information bit uniquely given to each shot within the wafer is written by a mask shift method. Further, an information bit uniquely given to each wafer is written in a wafer discrimination block of the chip which is fabricated on the wafer by the mask shift method and mask combination method.

Abstract: According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.