Abstract: An approach provides a semiconductor structure for a first device with a first plurality of channels with a larger horizontal dimension than a vertical dimension of the first plurality of channels a second device comprising a second plurality of channels with a smaller horizontal dimension than the vertical dimension of the second plurality of channels. The first plurality of channels and the second plurality of channels have a same channel width in embodiments of the present invention. The first device is an n-type horizontal gate-all-around device and the second device is a p-type horizontal gate-all-around device.

Abstract: Embodiments herein describe techniques, systems, and method for a semiconductor device. A semiconductor device may include isolation areas above a substrate to form a trench between the isolation areas. A first buffer layer is over the substrate, in contact with the substrate, and within the trench. A second buffer layer is within the trench over the first buffer layer, and in contact with the first buffer layer. A channel area is above the first buffer layer, above a portion of the second buffer layer that are below a source area or a drain area, and without being vertically above a portion of the second buffer layer. In addition, the source area or the drain area is above the second buffer layer, in contact with the second buffer layer, and adjacent to the channel area. Other embodiments may be described and/or claimed.

Abstract: In a standard cell including nanowire FETs, pads connected to nanowires are arranged at a predetermined pitch in X direction along which the nanowires extend. A cell width of the standard cell is an integral multiplication of the pitch. In a case where the standard cell is arranged to constitute the layout of a semiconductor integrated circuit device, the pads are regularly arranged in the X direction.

Abstract: A method of forming a vertical transport fin field effect transistor device is provided. The method includes replacing a portion of a sacrificial exclusion layer between one or more vertical fins and a substrate with a temporary inner spacer. The method further includes removing a portion of a fin layer and the sacrificial exclusion layer between the one or more vertical fins and the substrate, and forming a bottom source/drain on the temporary inner spacer and between the one or more vertical fins and the substrate. The method further includes replacing a portion of the bottom source/drain with a temporary gap filler, and replacing the temporary gap filler and temporary inner spacer with a wrap-around source/drain contact having an L-shaped cross-section.

Abstract: A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.

Abstract: The present invention provides a method of manufacturing nanowire semiconductor device. In the active region of the PMOS the first nanowire is formed with high hole mobility and in the active region of the NMOS the second nanowire is formed with high electron mobility to achieve the objective of improving the performance of nanowire semiconductor device.

Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

Abstract: A thin-film transistor comprises a semiconductor panel, a dielectric layer, a semiconductor film layer, a conduct layer, a source and a drain. The semiconductor panel comprises a base, an intra-dielectric layer, at least one metal wire layer and at least one via layer. The dielectric layer is stacked on the semiconductor panel. The semiconductor film layer is stacked on the dielectric layer. The conduct layer is formed on the semiconductor film layer. The source is formed on the via of the vias that is adjacent to and connects to the gate via. The drain is formed on another via of the vias that is adjacent to and connects to the gate via. A fabricating method for a thin-film transistor with metal-gates and nano-wires is also disclosed.

Abstract: A method of manufacturing a semiconductor device may include: forming active patterns of pillar-shapes upward protruding from a substrate, the active patterns fully doped with dopants of one conductivity type; forming a gate electrode extending in one direction, the gate electrode overlapped with sidewalls of the active patterns; and forming a gate insulating layer between the gate electrode and the active patterns.

Abstract: An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).

Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

Abstract: A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures.

Abstract: A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.

Abstract: A trench power device includes a semiconductor layer, a trench gate structure, a trench source structure, and a contact. The semiconductor layer has an epitaxial layer, a doped body region, a S/D region, and a doped contact-carrying region. The doped body region is formed in the epitaxial layer, the S/D region is formed in the doped body region, and the doped contact-carrying region is formed in the doped body region and outside a projecting portion defined by orthogonally projecting from the S/D region to the doped body region. The trench gate structure is embedded in the S/D region, the doped body region, and the epitaxial layer. The trench source structure is embedded in the doped body region and the epitaxial layer, and is connected to the doped contact-carrying region. The contact is connected to the S/D region and the doped contact-carrying region.

Abstract: In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion of the trapezoid gate structure that is in direct contact with an upper surface of the nanowire has a first width and a second portion of the trapezoid gate structure that is in direct contact with a lower surface of the nanowire has a second width. The second width of the trapezoid gate structure is greater than the first width of the trapezoid gate structure. The exposed portions of the nanowire that are adjacent to the portion of the nanowire that the trapezoid gate structure is surrounding are then doped to provide source and drain regions.

Abstract: A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.

Abstract: A method to fabricate a carbon nanotube (CNT)-based transistor includes providing a substrate having a CNT disposed over a surface; forming a protective electrically insulating layer over the CNT and forming a first multi-layer resist stack (MLRS) over the protective electrically insulating layer. The first MLRS includes a bottom layer, an intermediate layer and a top layer of resist. The method further includes patterning and selectively removing a portion of the first MLRS to define an opening for a gate stack while leaving the bottom layer; selectively removing a portion of the protective electrically insulating layer within the opening to expose a first portion of the CNT; forming the gate stack within the opening and upon the exposed first portion of the carbon nanotube, followed by formation of source and drain contacts also in accordance with the inventive method so as to expose second and third portions of the CNT.

Abstract: A structure includes a substrate having a carbon nanotube (CNT) disposed over a surface. The CNT is partially disposed within a protective electrically insulating layer. The structure further includes a gate stack disposed over the substrate. A first portion of a length of the CNT not covered by the protective electrically insulating layer passes through the gate stack. Source and drain contacts are disposed adjacent to the gate stack, where second and third portions of the length of CNT not covered by the protective electrically insulating layer are conductively electrically coupled to the source and drain contacts. The gate stack and the source and drain contacts are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer. A method to fabricate a CNT-based transistor is also described.

Abstract: Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.

Abstract: A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.

Abstract: An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.

Abstract: Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer richer in Si than the device layer. Rates of dissolution of Ge in wet etchants, such as aqueous hydroxide chemistries, may be dramatically decreased with the introduction of a buried p-type doped semiconductor layer into a semiconductor film stack, improving selectivity of etchant to the Ge-rich device layers.

Abstract: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source region and the first drain region, where the nanowire channel members include the first semiconductor layer, and opposing sidewall surfaces parallel to {100} crystalline planes and opposing faces parallel to the {110} crystalline planes. The substrate further includes a second source and drain regions having the characteristics of the first source and drain regions, and a single channel member suspended by the second source region and the second drain region and having the same characteristics as the nanowire channel members. A width of the single channel member is at least several times a width of a single nanowire member.

Abstract: An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.

Abstract: Non-planar semiconductor devices having germanium-based active regions with release etch-passivation surfaces are described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium-rich nanowires disposed above a substrate. Each nanowire includes a channel region having a sulfur-passivated outer surface. A gate stack is disposed on and completely surrounds the channel region of each of the germanium-rich nanowires. The gate stack includes a gate dielectric layer disposed on and surrounding the sulfur-passivated outer surface and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of the germanium-rich nanowires.

Abstract: A semiconductor device may include active patterns of pillar-shapes disposed on a substrate and spaced apart from each other in one direction; a gate electrode extending in the one direction and overlapped with sidewalls of the active patterns; a gate insulating layer disposed between the gate electrode and the active patterns; bit lines connected to bottom surfaces of respective active patterns; and/or capacitors connected to top surfaces of the respective active patterns. Each of the active patterns may have no p-type/n-type (PN) junctions. A semiconductor device may include a substrate; active patterns on the substrate that are spaced apart from each other; a gate electrode configured to overlap sidewalls of the active patterns; and/or gate insulating layers between the gate electrode and respective active patterns. The active patterns may be doped with dopants of a same conductivity type.

Abstract: Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.

Abstract: A nanowire field effect transistor device includes a first nanowire having a first distal end connected to a source region, a second distal end connected to a drain region, and a channel region therebetween, the source region and the drain region arranged on a substrate, and a second nanowire having a first distal end connected to the source region and a second distal end connected to the drain region, and a channel region therebetween, a longitudinal axis of the first nanowire and a longitudinal axis of the second nanowire defining a plane, the plane arranged substantially orthogonal to a plane defined by a planar surface of the substrate.

Abstract: A semiconductor device and tunnel field-effect transistor, and methods of fabrication thereof are provided. The device includes first and second semiconductor regions, an intermediate region, and an epitaxial layer. The intermediate region separates the first and second semiconductor regions, and the epitaxial layer extends at least partially between the first and second regions over or alongside of the intermediate region. A gate electrode is provided for gating the circuit structure. The epitaxial layer is disposed to reside between the gate electrode and at least one of the first semiconductor region, the second semiconductor region, or the intermediate region. The epitaxial layer includes an epitaxially-grown, ultra-thin body layer of semiconductor material with a thickness less than or equal to 15 nanometers. Where the semiconductor device is a tunneling field-effect transistor, the intermediate region may be a large band-gap semiconductor region, with a band-gap greater than that of the epitaxial layer.

Abstract: A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.

Abstract: Glassy carbon nanostructures are disclosed that can be used as electrode materials in batteries and electrochemical capacitors, or as photoelectrodes in photocatalysis and photoelectrochemistry devices. In some embodiments channels (e.g., substantially cylindrically-shaped pores) are formed in a glassy carbon substrate, whereas in other embodiments, ridges are formed that extend along and over a glassy carbon substrate. In either case, a semiconductor and/or metal oxide may be deposited over the glassy carbon to form a composite material.

Abstract: Techniques for increasing effective device width of a nanowire FET device are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A SOI wafer is provided having an SOI layer over a BOX. Nanowire cores and pads are etched in the SOI layer in a ladder-like configuration. The nanowire cores are suspended over the BOX. Epitaxial shells are formed surrounding each of the nanowire cores. A gate stack is formed that surrounds at least a portion of each of the nanowire cores/epitaxial shells, wherein the portions of the nanowire cores/epitaxial shells surrounded by the gate stack serve as channels of the device, and wherein the pads and portions of the nanowire cores/epitaxial shells that extend out from the gate stack serve as source and drain regions of the device.

Abstract: A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided.

Abstract: A Vertical Field Effect Transistor (VFET) formed on a substrate, with a conductive bottom electrode formed thereon. A bottom dielectric spacer layer and a gate dielectric layer surrounded by a gate electrode are formed thereabove. Thereabove is an upper spacer layer. A pore extends therethrough between the electrodes. A columnar Vertical Semiconductor Nanowire (VSN) fills the pore and between the top and bottom electrodes. An FET channel is formed in a central region of the VSN between doped source and drain regions at opposite ends of the VSN. The gate dielectric structure, that is formed on an exterior surface of the VSN above the bottom dielectric spacer layer, separates the VSN from the gate electrode.

Abstract: In one aspect, a FET device is provided. The FET device includes a substrate; a semiconductor material on the substrate; at least one gate on the substrate surrounding a portion of the semiconductor material that serves as a channel region of the device, wherein portions of the semiconductor material extending out from the gate serve as source and drain regions of the device, and wherein the source and drain regions of the device are displaced from the substrate; a planarizing dielectric on the device covering the gate and the semiconductor material; and contacts which extend through the planarizing dielectric and surround the source and drain regions of the device.

Abstract: A semiconductor circuit includes a plurality of semiconductor devices, each including a semiconductor islands having at least one electrical dopant atom and located on an insulator layer. Each semiconductor island is encapsulated by dielectric materials including at least one dielectric material portion. Conductive material portions, at least one of which abut two dielectric material portions that abut two distinct semiconductor islands, are located directly on the at least one dielectric material layer. At least one gate conductor is provided which overlies at least two semiconductor islands. Conduction across a dielectric material portion between a semiconductor island and a conductive material portion is effected by quantum tunneling. The conductive material portions and the at least one gate conductor are employed to form a semiconductor circuit having a low leakage current. A design structure for the semiconductor circuit is also provided.

Abstract: A complimentary metal oxide semiconductor (CMOS) device includes a wafer having a buried oxide (BOX) layer having a first region with a first thickness and a second region with a second thickness, the first thickness is less than the second thickness, a nanowire field effect transistor (FET) arranged on the BOX layer in the first region, the nanowire FET, and a finFET arranged on the BOX layer in the second region.

Abstract: A photodetector includes: a substrate; a first dielectric material positioned on the substrate; an optical waveguide positioned on the first dielectric material; a second dielectric material positioned on the optical waveguide; a graphene layer positioned on the second dielectric material; and a first electrode and a second electrode that are positioned on the graphene layer.

Abstract: A nanowire field effect transistor (FET) device includes a channel region including a silicon nanowire portion having a first distal end extending from the channel region and a second distal end extending from the channel region, the silicon portion is partially surrounded by a gate stack disposed circumferentially around the silicon portion, a source region including the first distal end of the silicon nanowire portion, a drain region including the second distal end of the silicon nanowire portion, a metallic layer disposed on the source region and the drain region, a first conductive member contacting the metallic layer of the source region, and a second conductive member contacting the metallic layer of the drain region.

Abstract: Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.

Abstract: The invention provides a high voltage-resistant lateral double-diffused transistor. The lateral double-diffused MOS transistor includes a channel region, a gate dielectric, a gate region, a source region, a drain region, a source end extension region and a drain end S-shaped drifting region, wherein the channel region has a lateral cylindrical silicon nanowire structure, on which a layer of gate dielectric is uniformly covered, the gate region is on the gate dielectric, the gate region and the gate dielectric completely surround the channel region, the source end extension region lies between the source region and the channel region, the drain end S-shaped drifting region lies between the drain region and the channel region, the plan view of the drain end S-shaped drifting region is in the form of single or multiple S-shaped structure(s), and an insulating material with a relative dielectric constant of 1-4 is filled within the S-shaped structure(s).

Abstract: A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure comprising a wetting layer disposed on a nanotube, a Shottky layer disposed on the wetting layer, a barrier layer disposed on the Shottky layer, and a matrix layer disposed on the barrier layer.

Abstract: A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.

Abstract: A circuit includes a negative differential resistance (NDR) device which includes a gate and a graphene channel, and a gate voltage source which modulates a gate voltage on the gate such that an electric current through the graphene channel exhibits negative differential resistance.

Abstract: A method for forming a nanowire field effect transistor (FET) device, the method includes forming a suspended nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate and around portions of nanowire extending from the gate, removing exposed portions of the nanowire left unprotected by the spacer structure, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a source region and a drain region.

Abstract: Non-planar semiconductor devices are provided that include at least one semiconductor nanowire suspended above a semiconductor oxide layer that is present on a first portion of a bulk semiconductor substrate. An end segment of the at least one semiconductor nanowire is attached to a first semiconductor pad region and another end segment of the at least one semiconductor nanowire is attached to a second semiconductor pad region. The first and second pad regions are located above and are in direct contact with a second portion of the bulk semiconductor substrate which is vertically offsets from the first portion. The structure further includes a gate surrounding a central portion of the at least one semiconductor nanowire, a source region located on a first side of the gate, and a drain region located on a second side of the gate which is opposite the first side of the gate.

Abstract: A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first and second wafer regions, respectively, with second nanowire channel sidewalls being misaligned relative to a crystallographic plane of the semiconductor more than first nanowire channel sidewalls and displacing the semiconductor toward an alignment condition between the sidewalls and the crystallographic plane such that thickness differences between the first and second nanowire channels reflect the greater misalignment of the second nanowire channel sidewalls.

Abstract: Non-planar semiconductor devices including at least one semiconductor nanowire having a tapered profile which widens from the source side of the device towards the drain side of the device are provided which have reduced gate to drain coupling and therefore reduced gate induced drain tunneling currents.