Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer and a conductive layer are sequentially formed on the substrate. An ion implantation process is performed to implant a dopant into the substrate below the position for forming a gate of the transfer transistor and in the photo-sensitive region through the conductive layer and the dielectric layer. The conductive layer and the dielectric layer are patterned to at least form the gate structure of the transfer transistor on the transistor device region. Thereafter, a photo diode is formed in the substrate in the photo-sensitive region.

Abstract: This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.

Abstract: A MEMS (micro-electro-mechanical system) getter microdevice for controlling the ambient pressure inside the hermetic packages that enclose various types of MEMS, photonic, or optoelectronic devices. The getter microdevice revolves around a platform suspended at a height above a substrate, and which is supported by supporting legs having low thermal conductance. Layers are deposited on the platform, such layers including a properly patterned resistor element, a heat-spreading layer and, finally, a thin-film getter material. When an electrical current flows through it, the resistor element heats the thin-film getter material until it reaches its activation temperature. The getter material then absorbs the gas species that could be present in the hermetic package, such gas species possibly impairing the operation of the devices housed in the packages while reducing their lifetime.

Abstract: A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.

Abstract: An apparatus and method for producing a dye-sensitized cell are provided, in which a pre-transparent electrode and an opposite electrode are partially bonded, dye molecules are applied to the bonded electrodes followed by washing, an electrolyte is injected, and then the electrodes are hermetically sealed. With the apparatus and method, the manufacturing cost can be reduced and the manufacturing process can be simplified.

Abstract: A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A first spin-on-dielectric layer is formed over a semiconductor substrate. An abnormal oxidation of the first spin-on-dielectric layer is carried out. A surface of the first spin-on-dielectric layer is removed. A second spin-on-dielectric layer is formed over the first spin-on-dielectric layer. A non-abnormal oxidation of the first and second spin-on-dielectric layers is carried out to modify the second spin-on-dielectric layer without modifying the first spin-on-dielectric layer.

Abstract: Techniques, apparatus, materials and systems are described for providing solar cells. In one aspect, an apparatus includes a high efficiency dye sensitized solar cell (DSSC). The DSSC includes three-dimensional nanostructured electrodes. The three-dimensional nanostructured electrodes can include a cathode; an electrolyte; and anode that includes TiO2 nanotubes arranged in a three-dimensional structure; and a photosensitive dye coated on the anode.

Abstract: Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization.

Abstract: Technologies are generally described for methods and systems for sensing or imaging. The apparatus includes a stack of a plurality of thin films, such as polymer thin films. The stack has a substantially imaginary total reflectance coefficient.

Abstract: A solid-state image pickup device includes: a photoelectric conversion portion formed on a substrate and composed of a photodiode; an image pickup area in which plural pixels each including a reading-out electrode for reading out signal electric charges generated and accumulated in the photoelectric conversion portion are formed; and a light blocking film having an opening portion right above the photoelectric conversion portion in an effective pixel area of the image pickup area, and light-blocking said photoelectric conversion portion in an OB pixel area of the image pickup area, in which a film deposited between the light blocking film and the substrate right above the photoelectric conversion portion in the OB pixel area is composed of only a silicon oxide film.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell includes forming an emitter region of a second conductive type opposite a first conductive type at a first surface of a substrate of the first conductive type by using an ion implantation method, forming a passivation layer on a second surface positioned opposite the first surface of the substrate, and forming a first electrode, which is positioned on the first surface of the substrate and is connected to the emitter region, and a second electrode, which is positioned on the second surface of the substrate and is selectively connected to the substrate through the passivation layer.

Abstract: An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.

Abstract: Solar cell contacts having good electrical performance are made by a process involving: (a) providing a silicon wafer substrate; (b) providing a paste comprising: (i) aluminum, (ii) glass frit, and (iii) a separate and distinct amount of at least one oxide, such that, together with the aluminum, the glass frit and oxide forms a paste having an exothermic reaction peak, at a temperature of at least 660° C. to less than 900° C., (c) applying the paste to the silicon wafer substrate to form a coated substrate, and (d) firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum and fuse the glass frit and oxide.

Abstract: A reflection blocking film provided on a solar cell includes a transparent substrate with a plurality of patterns having incident light collected on the top surface thereof, and a reflector on the bottom surface of the transparent substrate and with holes through which the collected incident light is transmitted. A method of manufacturing a reflection blocking film includes: forming a plurality of patterns on the top surface of a transparent substrate; coating a photo resin on a bottom surface of the transparent substrate; exposing to irradiate light to the top surface of the transparent substrate to react the light collected by the pattern with the photo resin; developing to lift off a portion, which does not receive light, by using a developer during the exposing; coating a reflector on the bottom surface of the transparent substrate; and forming holes by lifting off the photo resin interposed in the reflector.

Abstract: A solar cell module is provided that comprises: a solar cell; a connection electrode provided on each of a light-receiving surface and back surface of the solar cell; a conductive resin adhesive arranged on an upper surface of the connection electrode; and a wiring material electrically connected to the solar cell and connected with the connection electrode and the conductive resin adhesive, wherein the conductive resin adhesive changes color upon curing, and the conductive resin adhesive on the upper surface of the connection electrode provided on the light-receiving surface of the solar cell is arranged within a region corresponding to at least one of the connection electrode and the wiring material, on a projection plane parallel with the light-receiving surface and exposed on a light-receiving surface side.

Abstract: The invention relates to a process for the production of a structured electrically conductive coating on a substrate, in which first a monolayer or oligolayer of a surface-hydrophobizing substance is applied to a surface of the substrate and then a substance comprising electrically conductive particles is applied to the substrate according to a predetermined pattern. The invention furthermore relates to a use of the process for the production of solar cells or circuit boards and to an electronic component comprising a substrate to which a structured electrically conductive surface is applied, a monolayer or oligolayer of a surface-hydrophobizing material being applied to the substrate and the structured electrically conductive surface being applied to the monolayer or oligolayer.

Abstract: An organic electronic device which does not deteriorate a device function over a long period of time and a method for its manufacture. The organic electronic device, containing: an organic semiconductor element (B) including a pair of electrodes; a layer (C) containing a scavenger, which absorbs at least one of moisture and oxygen; and a gas barrier film (D), in that order; and an anticorrosion layer (E) between the pair of electrodes and the layer (C), wherein the layer (E) has a film thickness of 20 ?m or more, and a water vapor transmission rate Pe (g/m2/day) of layer (E) at 40° C. and 90% RH is 15 g/m2/day?Pe>Pd relative to a water vapor transmission rate Pd of the film (D) at 40° C. and 90% RH, wherein Pd is 10?4?Pd?10?1 g/m2/day.

Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.

Abstract: A sealing member, a photoelectric conversion device having the same, and a method of preparing the same are disclosed. In one aspect, the sealing member for the photoelectric conversion device joins a first substrate and a second substrate, which face each other, and seals an electrolyte solution in a space therebetween. An edge of the sealing member may include a rounded portion and a radius of a circle including the rounded portion is about 50% or more of the width of the sealing member. The sealing member may serve to reduce leakage of the electrolyte solution due to lowered adhesion of the sealing member or a wrinkled sealing member, and thus, improve reliability of the photoelectric conversion device.

Abstract: An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.

Abstract: Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: Embodiments of the invention contemplate the formation of a solar cell module comprising an array of interconnected solar cells that are formed using an automated processing sequence that is used to form a novel planar solar cell interconnect structure. In one embodiment, the module structure described herein includes a patterned adhesive layer that is disposed on a backsheet to receive and bond a plurality of conducting ribbons thereon. The substantially planar bonded conducting ribbons are then used to interconnect an array of solar cell devices to form a solar cell module that can be electrically connected to one or more external components, such as an electrical power grid, satellites, electronic devices or other similar power requiring units. Embodiments of the invention may further provide a roll-to-roll system that is configured to serially form a plurality of solar cell modules over different portions of a backsheet material received from a roll of backsheet material.

Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.

Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

Abstract: A photovoltaic module, particularly a thin-film photovoltaic module, includes at least one carrier panel preferably implemented as a glass panel, one or more coatings applied to the carrier panel for generating electrical current, at least one or more electrically conductive contacts, at least one cover coating for covering at least one partial region of the carrier panel with the coatings generating electricity, the electrically conductive contacts and optionally a glass cover panel. The cover coating is particularly implemented as a melted coating, at least one bulk granular granulate being used for the production thereof.

Abstract: A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.

Abstract: A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed.

Abstract: The present invention relates to a coating agent for a solar cell module obtained by dispersing silica fine particles (A) with an average particle diameter of 15 nm or less and low-refractive index resin particles (B) with a refractive index of 1.36 or less in an aqueous medium, in which the solid content is 5% by mass or less, and the mass ratio of the silica fine particles (A) to the low-refractive index resin particles (B) in the solid content (silica fine particles (A)/low-refractive index resin particles (B)) is more than 20/80 and less than 70/30. The coating agent for a solar cell module is capable of forming an anti-reflection film at room temperature with excellent reflectance-reducing effect, abrasion resistance and weather resistance.

Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.

Abstract: A solar cell, including contact metallization formed using selective laser irradiation. An upper layer is formed in the solar cell including a material which can be selectively modified to electrical contacts upon laser irradiation. Selective laser irradiation is applied to at least one region of the upper layer to form at least one electrical contact in the layer. A remaining region of the upper layer may be a functional layer of the solar cell which need not be removed. The upper layer may be, e.g., a transparent, conductive film, and anti-reflective film, and/or passivation. The electrical contact may provide an electrically conductive path to at least one region below the upper layer of the solar cell.

Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules.

Abstract: A polymer containing a triazine ring-containing repeating unit structure represented by, for example, formula (23) or (24), which alone can achieve high heat resistance, high transparency, high refraction index, high solubility and low volume shrinkage, without adding a metal oxide.

Abstract: A multi-junction group III-V compound semiconductor solar cell and fabrication method thereof forms a 2D photonic crystal structure in the topmost window layer of the stacked solar cell units by etching holes in the window layer. The 2D photonic crystal structure causes omni-directional reflection of the sunlight along any transverse plane of the 2D photonic crystal structure and directs the oblique sunlight to enter the bottom surface of the holes, thereby increasing the amount of incident light. By applying the property that the 2D photonic crystal structure causes a wider range of wavelengths to have higher transmission efficiency at the window layer to the multi-junction group III-V compound semiconductor solar cell, energy conversion efficiency may be effectively increased.

Abstract: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array. The thin film photoelectric conversion module further comprises a plurality of first electrode rows extending along a current flow direction and a resistive material electrically connected to adjacent two of the first electrode rows, wherein the resistive material has an electrical resistivity no less than 10?9 ohm-cm, wherein when the resistive material is a material different from that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows at least partially connected, and when the resistive material is a material the same as that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows partially connected.

Abstract: A solid-state imaging device includes: photoelectric conversion units disposed in the form of matrix in an imaging region and a peripheral region around the imaging region; transfer electrodes provided on a side of the photoelectric conversion units arranged in the vertical direction of the matrix; and first-layer wirings and second-layer wirings in a multi-layer wiring structure disposed to connect the transfer electrodes in the horizontal direction of the matrix, wherein the first-layer wirings and the second-layer wirings are provided as light-shielding patterns for covering the photoelectric conversion units in the peripheral region.

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract: A photovoltaic conversion device including an area for collecting photons provided by luminous radiation and an area for converting the photons into electrical energy, the collecting area and the converting area being distinct, a fluid loaded with photoluminescent particles being for flowing between the collecting area and the converting area, the particles collecting photons and conveying them to the converting area in which they are reemitted.

Abstract: An optical device of the present invention comprises a light-emitting element or a light-receiving element mounted on a support and a cured silicone material unified into a single article onto the support by the sealing of the element with a hydrosilylation reaction curable silicone composition, and is characterized in that the surface of the cured silicone material has been treated with an organopolysiloxane that has at least three silicon-bonded hydrogen atoms in one molecule. The optical device is resistant to the adherence of dust and dirt due to an inhibition of the stickiness of the surface of a cured silicone material that seals a light-emitting element or a light-receiving element mounted on a support and has thereby been unified into a single body onto the support.

Abstract: The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.

Abstract: A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract: Disclosed is a wafer type solar cell and a method for manufacturing the same, which facilitates to enhance hole-collecting efficiency, and to improve cell efficiency by preventing transmittance of solar ray from being lowered, the wafer type solar cell comprising a first semiconductor layer of a semiconductor wafer; a second semiconductor layer doped with P-type dopant, wherein the second semiconductor layer is formed on one surface of the first semiconductor layer, on which solar ray is incident; a third semiconductor layer doped with N-type dopant, wherein the third semiconductor layer is formed on the other surface of the first semiconductor layer; a first passivation layer on the second semiconductor layer; a second passivation layer on the third semiconductor layer; a first electrode connected with the second semiconductor layer; and a second electrode connected with the third semiconductor layer.

Abstract: Systems and methods of the present invention can be used to charge a charge-holding layer (such as a passivation layer and/or antireflective layer) of a solar cell with a positive or negative charge as desired. The charge-holding layer(s) of such a cell can include any suitable dielectric material capable of holding either a negative or a positive charge, and can be charged at any suitable point during manufacture of the cell, including during or after deposition of the passivation layer(s). A method according to one aspect of the invention includes disposing a solar cell in electrical communication with an electrode inside a chamber. The solar cell includes an emitter, a base, a first passivation layer adjacent the emitter, and a second passivation layer adjacent the base. Gas is injected into the chamber and a plasma (with photons having an energy level of at least about 3.1 eV) is generated using the gas.

Abstract: The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal.

Abstract: According to one embodiment, a backside illumination solid-state imaging device includes a semiconductor layer, a first light-receiving unit and a second light-receiving unit, a circuit unit, an impurity isolation layer, and a light-shielding film. A first light-receiving unit and a second light-receiving unit are formed adjacent to each other in the semiconductor layer, convert light applied from a lower surface side of the semiconductor layer into a signal, and store electric charges. A circuit unit is formed on an upper surface of the semiconductor layer. An impurity isolation layer is formed to reach to the upper surface from the lower surface in the semiconductor layer and isolates the first light-receiving unit from the second light-receiving unit. A light-shielding film is formed on part of the lower surface side in the impurity isolation layer so as to extend from the lower surface to the upper surface.

Abstract: A method of making an embedded microlens includes providing a substrate having a photo-sensing region, forming a dielectric film overlying the substrate, forming a mask having a circular opening over the dielectric film, the opening being center-aligned over the photo-sensing region, and etching the dielectric film to form a cavity under the mask by introducing an isotropic etchant through the opening, the cavity being characterized by a truncated plano-convex shape having a flat circular bottom and curved peripheral sides convex towards the dielectric film. The method further includes removing the mask, depositing a lens material with a higher refractive index than that of the dielectric film to fill the cavity, planarizing the lens material to form the embedded microlens in the cavity having a smooth top surface, and forming a color filter layer overlying the microlens. The dielectric film includes silicon dioxide having a refractive index of 1.5 or less.

Abstract: In one embodiment, a method for making an optical micro device package includes: providing a substrate wafer having a plurality of solid state light sensors integrate therein; providing a transparent cover wafer coated with a material that alters the transparency characteristics of the cover wafer; forming a layer of light sensitive, photo definable adhesive material on the substrate wafer; selectively removing part of the layer of adhesive material in a pattern for a plurality of adhesive spacers between the substrate wafer and the cover wafer with each spacer surrounding a corresponding one of the light sensors; bonding the substrate wafer and the cover wafer together at the spacers to form a wafer assembly in which each spacer surrounds and seals a corresponding one of the light sensors within a cavity bounded by a spacer and the two wafers; and singulating individual device packages from the wafer assembly.