Abstract: A solar cell module includes a plurality of solar cells connected to each other, each solar cell of the plurality of solar cells independently includes a semiconductor substrate, one n+ region and one p+ region disposed on one side of the semiconductor substrate and separated from each other, at least one first electrode and at least one second electrode, in which the at least one first electrode is electrically connected to the n+ region and the at least one second electrode is electrically connected to the p+ region, and a first trench and a second trench disposed on each of the plurality of solar cells, wherein the first trench is disposed on the one side of the semiconductor substrate and the second trench is disposed on the other opposite facing side of the semiconductor substrate, the first and second trenches are separated from each other.

Abstract: A luminescent solar concentrator (LSC) for receiving electromagnetic radiation of at least a first wavelength is disclosed. The LSC includes a core layer. A lower clad layer substantially underlies the core layer. At least one photovoltaic (PV) cell is partially embedded in at least one of the core layer and the lower clad layer. At least one dye layer substantially overlies the core layer. The at least one dye layer has embedded therein at least one absorption dipole and at least one emission dipole, the at least one emission dipole being coupled to the at least one absorption dipole.

Abstract: A fingerprint sensor chip package method and the package structure thereof are disclosed. The invention includes: providing a substrate; arranging a sensor chip on the substrate, with an active surface of the sensor chip facing upward; forming a patterned conductive colloid on the sensor chip, wherein the patterned conductive colloid extends from the periphery of the active surface of the sensor chip along the side wall of the sensor and electrically connects with the circuit layer of the substrate; forming a non-conductive film to cover the sensor chip, the patterned conductive colloid and a portion of the substrate; and forming a conductive film on the non-conductive film. The patterned conductive colloid replaces the conventional bond wires to improve the product yield and to omit the molding process. The conductive film is electrically connected with the grounding point/area on the substrate to dissipate the static charges for protecting the chip.

Abstract: A method for manufacturing a polysilicon emitter solar cell with a passivating layer over its polysilicon emitter layer is disclosed. The method includes steps of preparing a substrate, forming a first polysilicon layer over the substrate, and forming a first passivating layer over the first polysilicon layer. Another embodiment of the present invention discloses a solar cell apparatus. The solar cell apparatus includes a substrate, a first polysilicon layer over the substrate, and a first passivating layer on first polysilicon layer.

Abstract: A method and apparatus for forming a protective coating on a photovoltaic device is provided. The photovoltaic device is formed by depositing photoelectric conversion units on a substrate, and by forming conductive layers and contacts on the photoelectric conversion units. The protective coating is formed by a deposition process, such as physical or chemical vapor deposition.

Abstract: A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns.

Abstract: The embodiment provides a package structure for a chip and a method for fabricating the same. The package structure for the chip includes a chip having a substrate and a bonding pad structure. The chip has an upper surface and a lower surface. An upper packaging layer covers the upper surface of the chip. A spacer layer is between the upper packaging layer and the chip. A conductive path is electrically connected to the bonding pad structure. An anti-reflective layer is disposed between the spacer layer and the upper packaging layer. An overlapping region is between the anti-reflective layer and the spacer layer.

Abstract: A system and a method for mass production of Dye-Sensitized Solar Cells at low cost via a continuous roll-to-roll process. While a flexible conductive substrate is constantly in transit on a conveyor, a titanium dioxide (TiO2) layer is: formed by spray printing; sintered; dyed in a dye tank, with or without immersion, by a dye solution sprayed from nozzles while the substrate moves along a conveyor line configured as multiple alternating U-shaped lines; washed and dried; loaded with a gel-type electrolyte by roll-type printing; and covered and pressure-sealed by another flexible conductive substrate, aided by preloaded sealants. The dye solution in the dye tank may be re-circulated, during which process, the temperature, level, concentration of the dye solution may be adjusted and controlled. The roll-to-roll production process may further include erecting anti-leakage walls and leveling the electrolyte layer for preventing post-sealing leakage of the electrolyte.

Abstract: A method and system for detecting light in accordance with other embodiments of the present invention includes providing at least one imaging sensor that detects a band of wavelengths. At least one layer of undoped quantum dots is optically coupled to the at least one imaging sensor. The at least one layer of undoped quantum dots absorbs at one or more wavelengths outside the band of wavelengths and outputs at least partially in the band of wavelengths.

Abstract: A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO2, 3.9 to 5.4 wt.-% of Al2O3, 2.8 to 3.8 wt.-% of TiO2 and 6.9 to 9.3 wt.-% of B2O3.

Abstract: In order to better and more efficiently assemble back contact solar cells into modules, the cell to cell soldering and other soldered connections are replaced by electro and/or electroless plating. Back contact solar cells, diodes and external leads can be first laminated to the module front glass for support and stability. Conductive materials are deposited selectively to create a plating seed pattern for the entire module circuit. Subsequent plating steps create an integrated cell and module metallization. This avoids stringing and tabbing and the associated soldering steps. This process is easier for mass manufacturing and is advantageous for handling fragile silicon solar cells. Additionally, since highly corrosion resistant metals can be plated, the moisture barrier requirements of the back side materials can be greatly relaxed. This can simplify and reduce the cost of the back side of the module.

Abstract: A semiconductor substrate is bonded to a glass board in a peripheral portion of the semiconductor substrate by an adhesive layer. A hollow region is formed in a portion surrounded by the semiconductor substrate, the glass board, and the adhesive layer. In the hollow region, reinforcing adhesive layers are formed on a back surface of the semiconductor substrate and at positions corresponding to bumps provided at regular intervals. The reinforcing adhesive layers allow the semiconductor substrate to have strength withstanding to a load of a testing probe.

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. The firing of the back contact may form a p+ emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.

Abstract: A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. A spin-on glass layer may be deposited over the non-uniform passivation layer prior to planarization. Once a uniform, flat first passivation layer is achieved over the final metal, a second passivation layer, a color filter array, or a lens forming layer with uniform thickness is formed over the first passivation layer. The passivation layers can be oxide, nitride, a combination of oxide and nitride, or other suitable materials. The color filter array layer may also undergo a planarization process prior to formation of the lens forming layer. The present invention is also applicable to other devices.

Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer and a conductive layer are sequentially formed on the substrate. An ion implantation process is performed to implant a dopant into the substrate below the position for forming a gate of the transfer transistor and in the photo-sensitive region through the conductive layer and the dielectric layer. The conductive layer and the dielectric layer are patterned to at least form the gate structure of the transfer transistor on the transistor device region. Thereafter, a photo diode is formed in the substrate in the photo-sensitive region.

Abstract: A method of manufacturing a photovoltaic module may include depositing a semiconductor material adjacent to a substrate; and depositing a back contact material adjacent to the semiconductor material, where depositing the back contact material may include directing a feed gas including hydrogen toward the substrate.

Abstract: A photovoltaic solar cell module comprises a plurality of bifacial solar cells and electrical conductors. Each bifacial solar cell comprises a plurality of bus-bar contacts. A phosphorous silicon glass layer is formed on one side of the bifacial cell by phosphorous diffusion, and a boron silicon glass layer is formed on the other side of the bifacial cell by boron diffusion. The phosphorous diffusion and the boron diffusion are conducted by a face-to-face diffusion method. The combination of the two gettering methods substantially increases the minority carrier life time of the bifacial solar cell.

Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, side chains, or both backbone and side chains, multiple secondary or tertiary amide groups that are represented by the following acetamide structure: >N—C(?O)—. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic poly(vinyl alcohol) having a degree of hydrolysis of less than 95%. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A deposition inhibitor composition includes two compatible solvents. The first solvent has a vapor pressure of at least 10 mm Hg at room temperature and the second solvent has a vapor pressure of less than that of the first solvent. The composition further includes a hydrophilic deposition inhibitor material that is dissolved in the composition. This material is soluble in an aqueous solution that comprises at least 50% by weight of water and has a free acid content of less than 2.5 meq/g. This composition is useful to provide a deposition inhibitor pattern for chemical vapor deposition methods such as an atomic-layer-deposition method for forming a patterned thin film includes applying a hydrophilic deposition inhibitor material to a substrate.

Abstract: Sensors and detection systems suitable for measuring analytes, such as biomolecule, organic and inorganic species, including environmentally and medically relevant volatiles and gases, such as NO, NO2, CO2, NH3, H2, CO and the like, are provided. Certain embodiments of nanostructured sensor systems are configured for measurement of medically important gases in breath. Applications include the measurement of endogenous nitric oxide (NO) in breath, such as for the monitoring or diagnosis of asthma and other pulmonary conditions.

Abstract: A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.

Abstract: Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti-reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

Abstract: The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.

Abstract: Certain example embodiments of this invention relate to coated articles that include anti-reflective (AR) coatings produced from colloidal silica with variable size particles in formulation, and/or methods of making the same. In certain example embodiments, the AR coatings advantageously exhibit high transmission, high transmission gain with respect to uncoated articles, and high b* values, before and/or after heat treatment. The AR coatings of certain example embodiments may be temperable or otherwise heat treatable (e.g., at temperatures of 500 degrees C. or greater) together with their supporting substrates. In certain example embodiments, the particle size for the colloidal silica is 10-110 nm, and the b* values are at least about 0.8. Certain example embodiments may be used in connection with photovoltaic devices and/or the like.

Abstract: An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.

Abstract: A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 xM2O3.ySiO2??Chemical Formula 1 wherein M is a Group 13 element and x and y are real numbers wherein 0<2x<y and x+y=1; a first electrode in electrical communication with the p-type layer of the semiconductor substrate; and a second electrode in electrical communication with the n-type layer of the semiconductor substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter layer at a front surface of the substrate, a first anti-reflection layer on the emitter layer, a back surface field layer at a back surface of the substrate, and a second anti-reflection layer on the back surface field layer. The first anti-reflection layer and the second anti-reflection layer overlap may each other.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.

Abstract: Formation of stretchable photovoltaic devices and carriers is described. In some examples, a formation method includes: forming a stretchable carrier including a stretchable part having a given length, the given length being operable to change in response to a force being applied to the stretchable carrier; depositing a photovoltaic cell over a surface of the stretchable carrier; and interconnecting the photovoltaic cell to output terminals.

Abstract: Provided are a solar cell and a method of manufacturing the same. The method includes implanting impurities of a second conductivity type opposite to a first conductivity type on the entire surface of a semiconductor substrate of the first conductivity type to form an emitter layer, forming a first anti-reflective coating (ARC) layer on the emitter layer, patterning a portion of the first anti-reflective coating (ARC) layer where a front electrode will be formed, forming a second anti-reflective coating (ARC) layer on the first anti-reflective coating (ARC) layer and the emitter layer, and forming the front electrode and a rear electrode on front and rear surfaces of the semiconductor substrate. In this method, a double structure of two anti-reflective coating (ARC) layers with different thicknesses may be formed to make electrode patterns distinct, thereby facilitating alignment of electrodes.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate that contains first impurities of a first conductive type and is formed of a crystalline semiconductor, a first field region that is positioned on an incident surface of the substrate and contains second impurities of a second conductive type, an emitter region that contains third impurities of a third conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

Abstract: A method for fabricating a photovoltaic (PV) cell panel wherein each of a plurality of silicon donor wafers has a separation layer formed on its upper surface, e.g., porous anodically etched silicon. On each donor wafer, a PV cell is then partially completed including at least part of inter-cell interconnect, after which plural donor wafers are laminated to a backside substrate or frontside. All of the donor wafers are then separated from the partially completed PV cells in an exfoliation process, followed by simultaneous completion of the remaining PV cell structures on PV cells. Finally, a second lamination to a frontside glass or a backside panel completes the PV cell panel. The separated donor wafers may be reused in forming other PV cells. Use of epitaxial deposition to form the layers of the PV cells enables improved dopant distributions and sharper junction profiles for improved PV cell efficiency.

Abstract: Disclosed is a dye-sensitized solar cell wherein an improved photoelectric conversion efficiency is realized by suppressing reverse electron transfer and improving conductivity of electrodes. Corrosion of electrodes by an electrolyte solution is greatly suppressed in the dye-sensitized solar cell. A method for manufacturing the dye-sensitized solar cell is also disclosed. The dye-sensitized solar cell comprises: an anode electrode wherein a conductive base containing at least a metal collector grid and a semiconductor porous film layer to which a sensitizing dye is adsorbed are arranged on a light-transmitting substrate; a cathode electrode so arranged as to face the semiconductor porous film layer of the anode electrode; and an electrolyte sealed between two electrode pieces, namely between the anode electrode and the cathode electrode.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate, a first doped region of a first conductive type, a second doped region of a second conductive type opposite the first conductive type, a back passivation layer having contact holes exposing a portion of each of the first and second doped regions, a first electrode formed on the first doped region exposed through the contact holes, a second electrode formed on the second doped region exposed through the contact holes, an alignment mark formed at one surface of the semiconductor substrate, and a textured surface that is formed at a light receiving surface of the semiconductor substrate opposite the one surface of the semiconductor substrate in which the first and second doped regions are formed.

Abstract: A sealant disposed between two substrates to be sealed, the sealant comprising: at least two layers disposed layered on top of each other between the two substrates, wherein the at least two layers comprise materials having different components and at least one layer selected from the at least two layers includes a thermoplastic glass frit. A dye-sensitized solar cell including the sealant, and a method of manufacturing a dye-sensitized solar cell are also provided.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.

Abstract: Discussed herein are a solar cell and a fabricating method thereof. The solar cell includes a first conductivity-type semiconductor substrate, a second conductivity-type semiconductor layer formed on a front surface of the first conductivity-type semiconductor substrate, and having a conductivity opposite to that of the first conductivity-type semiconductor substrate, an anti-reflection film including at least one opening exposing a part of a surface of the second conductivity-type semiconductor layer, and formed on the second conductivity-type semiconductor layer, at least one front electrode contacting a part of the surface of the second conductivity-type semiconductor layer exposed through the at least one opening, and at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate, wherein the at least one front electrode includes a metal containing silver and lead-free glass frit.

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: An image sensor including a first substrate having a first surface intended to be illuminated and a second surface on the side of which is formed a plurality of photodetection areas, said second surface being covered with a stack of interconnect levels including metal layers topped with insulating material, and of a second substrate placed on the insulating material of the last interconnect level, in which are formed vias in contact with connection elements of the interconnect levels, at least one of the interconnect levels including conductive shielding areas aligned with the photodetection areas.

Abstract: A solar cell includes: a substrate having optical transparency; a photoelectric converter provided on the substrate, including a top-face electrode having optical transparency, a photoelectric conversion layer, and a back-face electrode having light reflectivity; and a low-refractive conductive layer whose refractive index is less than or equal to 2.0, the low-refractive conductive layer being made of a conductive material having optical transparency, being adjacent to the photoelectric conversion layer, and being disposed on a side of the photoelectric conversion layer opposite to the substrate.

Abstract: Disclosed is a method of passivating and reducing reflectance of a silicon photovoltaic cell. The method includes the step of providing a silicon wafer of a solar cell having a major surface. A passivation layer of silicon nitride is applied on at least 98 percent of the major surface through a vacuum deposition process. An index-matching film structure, different from silicon nitride, is applied on top of the passivation layer. The index matching film structure provides the majority of the antireflective property of the combination of the passivation layer and the index matching film structure.

Abstract: A semiconductor light receiving device includes a light receiving section made of a semiconductor provided on a substrate, an electrode provided on the substrate and configured to apply an electric field to the light receiving section, a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer, and a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode. At least a portion of the resin layer located in the gap has a light blocking property.