Abstract: Systems and methods for adaptive buffering in accordance with embodiments of the invention enable a reduced minimum buffer time. One embodiment includes a playback device comprising a memory; a network interface; and a processor that reads instructions stored in the memory that directs the processor to: download digital video content in a buffer of a playback device; receive a minimum buffer time from the digital video content; play the digital video content at a slow motion speed using the playback device; reduce the minimum buffer time by a slow motion playback speed factor; continue playing the digital video content at the slow motion speed until the reduced minimum buffer time is reached using the playback device; and play the digital video content at a speed faster than the slow motion speed once the minimum buffer time is reached using the playback device.

Abstract: An integrated circuit includes a memory cell array, a row decoder configured to generate a first decoder signal, a column decoder configured to generate a second decoder signal, and an array of write assist circuits coupled to the row and column decoder and the memory cell array. Each write assist circuit is configured to set an operating voltage of a corresponding memory cell, and generate the output signal in response to a first control signal. The operating voltage corresponds to an output signal. Each write assist circuit includes an AND gate coupled to a programmable voltage tuner. The programmable voltage tuner includes a set of P-type transistors coupled to a first P-type transistor. The set of P-type transistors is coupled together in parallel, and receives a set of select control signals. A first terminal of the first P-type transistor is configured to receive an AND signal from the AND gate.

Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: The present disclosure provides a three-dimensional NAND memory device, comprising memory cells coupled to a plurality of word lines and configured to store data, a row decoder configured to decode an address of a word line from the plurality of word lines, and a controller coupled to the array of memory cells. The controller includes a first multiplexer configured to receive a first plurality of trim selections, while each of the first plurality of trim selections is associated with a first trim parameter and each of the first plurality of trim selections corresponds to each of the plurality of word lines, respectively. The controller also includes a second multiplexer configured to receive a first plurality of trim settings, while each of the first plurality of trim settings corresponds to a value associated with the first trim parameter.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: Various implementations described herein are related to a method. The method may apply a write control voltage to a bitcell. The method may gradually ramp the write control voltage to the bitcell. The method may terminate application of the write control voltage to the bitcell when a write operation is sensed in the bitcell.

Abstract: A semiconductor device includes an alignment data generation circuit aligning first and second latch data generated from a first group of input data in synchronization with a first internal strobe signal, outputting the aligned first and second latch data as first alignment data, aligning a first and second latch data generated from a second group of the input data in synchronization with a second internal strobe signal, and outputting the aligned first and second latch data as second alignment data. The semiconductor device includes a write data generation circuit generating first and second write data from the first and second alignment data in synchronization with a latch clock after the start of a first operation mode and generating the first and second write data from the first alignment data in synchronization with the latch clock after the start of a second operation mode.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: A system for measuring similarity between a binary query vector and a plurality of binary candidate vectors includes a storage unit and a processor. The storage unit stores the binary query vector and the plurality of candidate vectors, and the processor performs Tanimoto calculations in terms of Hamming distances.

Abstract: A memory device includes a memory array that includes one or more rows of memory cells and one or more columns of memory cells. The comparator circuitry is operably connected to at least one column of memory cells in the one or more columns of memory cells. The comparator circuitry includes a precompute circuit and a select circuit operably connected to the outputs of the precompute circuit. The precompute circuit is operable to precompute a comparison operation to produce a first precompute signal and a second precompute signal. The select circuit is operable to receive a first cell data signal from a memory cell in the column of memory cells. Based at least on the first cell data signal, the select circuit selects either the first precompute signal or the second precompute signal to output from the comparator circuitry as a signal read from the memory cell.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: A method includes providing a reference clock signal having a reference period, providing a sampling clock signal having a sampling clock period shorter than the reference period of the reference clock signal, measuring the first subperiod as a first ratio of the first subperiod to the period of the sampling clock signal, measuring the second subperiod as a second ratio of the second subperiod to the period of the sampling clock signal, detecting a starting edge of a clock signal having a clock period greater than the reference period, producing a reconstructed reference signal based on the first ratio, the second ratio, and the detected starting edge, comparing the clock period of the clock signal with a period of the reconstructed reference signal to obtain a differential signal indicating a difference therebetween, and providing the differential signal to user circuitry for calibrating the clock signal.

Abstract: The application provides a memory device and an operation method thereof. The memory device includes: a memory array, for processing model computation having a plurality of input values and a plurality of interact coefficients; and at least one calculation unit. In receiving the input values, a first part and a second part of the memory cells generate a first part and a second part of the common source currents, respectively. The first part of the memory cells is electrically isolated from the second part of the memory cells based on a diagonal of the memory array. The at least one calculation unit calculates a first part and a second part of a local field energy of the model computation based on the first part and the second part of the common source currents.

Abstract: The present invention provides a power control circuit and control method. The power control circuit includes: a control module configured to control, according to an activation command, a memory bank of a plurality of memory banks to perform an operation; a power management module configured to wake up a local power supply for the memory bank according to a clock enable signal; and a power control module communicatively coupled with the power management module and configured to: send the clock enable signal to the power management module of the memory bank corresponding to the activation command in a power-saving mode; and send the clock enable signal to power management modules of the plurality of memory banks in a non-power-saving mode, where the power-saving mode indicates that a system clock is in a low-frequency state.

Abstract: The present invention provides a power control circuit and control method. The power control circuit includes: a control module configured to control, according to an activation command, a memory bank of a plurality of memory banks to perform an operation; a power management module configured to wake up a local power supply for the memory bank according to a clock enable signal; and a power control module communicatively coupled with the power management module and configured to: send the clock enable signal to the power management module of the memory bank corresponding to the activation command in a power-saving mode; and send the clock enable signal to power management modules of the plurality of memory banks in a non-power-saving mode, where the power-saving mode indicates that a system clock is in a low-frequency state.

Abstract: A memory, a method controlling method and a system are disclosed. The memory includes: an array of memory cells; an instruction decoder; a controller; and an I/O interface, including a chip select pin. The operational states of the memory include a deep power-down state, and in the deep power-down state, they are all disabled. In response to receiving a chip select signal, the memory enters a higher power state from the deep power-down state. The memory of the present disclosure provides the deep power-down state that disables the decoder, and the memory in the deep power-down state exits directly to a higher power state to achieve some functions without enabling all components, thereby reducing power consumption.

Abstract: Computer memory systems employing localized generation of a global bit line (GBL) clock signal to reduce clock signal read path divergence for improved signal tracking, and related methods. The memory system includes one or more memory banks that each include a memory array comprised memory bit cells organized in respective memory row and memory column circuits. A global bit line (GBL) keeper circuit in a GBL control path in the memory system is coupled to the GBLs to latch output read data from a word line path in a selected memory row circuit of a selected memory bank in a read operation. To improve tracking of timing of the GBL control path with the word line paths in the memory row circuits, a GBL clock signal and local WL clock signal in a given memory bank are separately sourced from a source clock locally within the selected memory bank.

Abstract: Methods, systems, and devices for on-die termination configuration for a memory device are described. In some examples, a memory device may determine a connection option from a set of connections options for which an ODT pin of the memory device is configured. Each connection option may correspond to a termination configuration for a different pin, such as a command and address (CA) pin, a clock (CK) pin, or a chip select (CS). Based on the determined connection option, the memory device may identify a respective termination option for each of the different pins, such as a first termination option for the CA pin, a second termination option for the CK pin, and a third termination option for the CS pin, and configure each of the different pins according to the respective termination option for that pin.

Abstract: One example of the present disclosure includes performing a comparison operation in memory using a logical representation of a first value stored in a first portion of a number of memory cells coupled to a sense line of a memory array and a logical representation of a second value stored in a second portion of the number of memory cells coupled to the sense line of the memory array. The comparison operation compares the first value to the second value, and the method can include storing a logical representation of a result of the comparison operation in a third portion of the number of memory cells coupled to the sense line of the memory array.

Abstract: An example apparatus having a heterogenous memory system includes a first sensor layer, of a plurality of stacked sensor layers, including an array of pixels; and one or more semiconductor layers of the plurality of stacked sensor layers located beneath the first sensor layer, the one or more semiconductor layers configured to process pixel data output by the array of pixels, the one or more semiconductor layers including a first memory to store most significant bits (“MSBs”) of data involved in the processing of the pixel data; a second memory to store least significant bits (“LSBs”) of the data; and wherein the first memory has a lower bit error rate (“BER”) than the second memory.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

Abstract: A semiconductor memory device includes a transmission circuit and a control circuit. The transmission circuit is configured to obtain write data and transmit that into a memory cell array according to the external clock signal when the chip selection signal is asserted. The control circuit is configured to control the transmission circuit to transmit first write data into the memory cell array when the chip selection signal changes from assertion to negation during the input period of the first write data, according to the external clock signal.

Abstract: A training method for a memory system is provided. The memory system includes a memory controller and a memory. The memory controller is connected with the memory. The training method includes the following steps. Firstly, the memory samples n command/address signals according to a first signal edge and a second signal edge of a clock signal to acquire a first sampled content and a second sampled content. The memory selectively outputting one of the first sampled content and the second sampled content through m data signals to the memory controller in response to a control signal. Moreover, m is larger than n and smaller than 2n.

Abstract: Methods, systems, and devices for performing quick precharge command sequences are described. An operating mode that is associated with a command sequence having a reduced duration relative to another operating mode may be configured at a memory device. The operating mode may be configured based on determining that a procedure does not attempt to preserve or is independent of preserving a logic state of accessed memory cells, among other conditions. While operating in the mode, the memory device may perform a received precharge command using a first set of operations having a first duration—rather than a second set of operations having a second set of operations having a second, longer duration—to perform the received precharge command. The first set of operations may also use less current or introduce less disturbance into the memory device relative to the second set of operations.

Abstract: An electronic device includes an enable signal generation circuit configured to activate, when a write operation is performed, a termination enable signal earlier than a time point when a write latency elapses, by a duration amount of an entry offset period; and a data input and output circuit configured to receive, when the write operation is performed, data later than the time point when the write latency elapses, based on the termination enable signal, wherein the data input and output circuit receives the data after the write latency elapses by a duration amount of a first data reception delay period.

Abstract: A serializer includes data input circuits configured to receive N-number of pieces of data in parallel, where N is an even number, data connection circuits configured to receive internal clock signals having different phases in different arrangements, and data output circuits configured to output the N-number of pieces of data in sequence in a single cycle of each of the internal clock signals, wherein the data connection circuits operate the data output circuits such that the data output circuits, in response to the internal clock signals, output corresponding data of the N-number of pieces of data in an enable period in the single cycle and have a high impedance state in a disable period in the single cycle.

Abstract: A circuit includes a memory array, a control circuit configured to identify an address of a first row containing a weak cell, and store corresponding address information in a storage device, and an address decoding circuit including NAND pairs, inverter pairs, and a logic tree. Each NAND pair receives corresponding bits of the address information and the address of the first row and corresponding inverted bits of the address information and the address of the first row inverted by corresponding inverter pairs, and output terminals of the NAND pairs are connected to the logic tree. The logic tree matches the address information with the address of the first row based on output logic levels from the NAND pairs and, in response to the corresponding address information matching the address of the first row, activates a second row of the memory array simultaneously with the first row being activated.

Abstract: Examples of the present disclosure provide apparatuses and methods for smallest value element or largest value element determination in memory. An example method comprises: storing an elements vector comprising a plurality of elements in a group of memory cells coupled to an access line of an array; performing, using sensing circuitry coupled to the array, a logical operation using a first vector and a second vector as inputs, with a result of the logical operation being stored in the array as a result vector; updating the result vector responsive to performing a plurality of subsequent logical operations using the sensing circuitry; and providing an indication of which of the plurality of elements have one of a smallest value and a largest value.

Abstract: Methods and systems for replaying buffered audio of a telephone call are provided herein. In some embodiments, a method for replaying buffered audio of a telephone call, comprises buffering audio data associated with a telephone call when a quality of an established data connection decreases below a first threshold quality measure; playing the buffered audio data from the buffer; determining the quality of the established data connection exceeds a second threshold quality measure; and replaying the audio data from the buffer, wherein replaying the audio comprises modifying the playback rate of the buffered audio data during playback.

Abstract: An integrated circuit includes an array of write assist circuits electrically connected to a memory cell array. Each write assist circuit is configured to set an operating voltage of a corresponding memory cell. Each write assist circuit is configured to receive at least a first control signal, and generate an output signal at least in response to the first control signal. The output signal controlling the operating voltage of the corresponding memory cell. Each write assist circuit includes a programmable voltage tuner. The programmable voltage tuner includes a first P-type transistor and a second P-type transistor coupled to the first P-type transistor. A first terminal of the first P-type transistor is configured as a first input node to receive a first select control signal. A first terminal of the second P-type transistor is configured as a second input node to receive a second select control signal.

Abstract: A delay tracking method and a memory system are provided. The delay tracking method is applied to a memory system supporting a low-frequency-mode (LFM) and a high-frequency-mode (HFM) of an operating clock. The delay tracking method includes the steps of selecting a LFM oscillator for obtaining a LFM delay value when the operating clock is in the HFM; and selecting a HFM oscillator for obtaining a HFM delay value when the operating clock is in the LFM.

Abstract: Methods, systems, and devices for detection of illegal commands are described. A memory device, such as a dynamic random access memory (DRAM), may receive a command from a device, such as a host device, to perform an access operation on at least one memory cell of a memory device. The memory device may determine, using a detection component, that a timing threshold associated with an operation of the memory device would be violated by performing the access operation. The memory device may refrain from executing the access operation based on determining that performing the access operation included in the command would violate the timing threshold. The memory device may transmit, to the device, an indication that performing the command would violate the timing threshold.

Abstract: A shared data transfer clock is used among double data rate memory ranks. A memory controller processes incoming memory access commands destined for at least one of a plurality of double data rate memory ranks and determines when a target DDR memory rank is out of synchronization with respect to the shared data transfer clock and a memory clock. In response to determining that the target DDR memory rank is out of synchronization, the memory controller determines whether the non-target DDR memory rank is out-of-synchronization with respect to the shared data transfer clock and the memory clock, and issues a data transfer clock synchronization command to the target DDR memory rank in response to determining that the non-target DDR memory rank is out-of-synchronization with respect to the shared data transfer clock and the memory clock.

Abstract: Methods, systems, and apparatuses for a memory device (e.g., DRAM) including an error check and scrub (ECS) procedure in conjunction with refresh operations are described. The ECS procedure may include read/modify-write cycles when errors are detected in code words. In some embodiments, the memory device may complete the ECS procedure over multiple refresh commands, namely by performing a read (or read/modify) portion of the ECS procedure while a first refresh command is executed, and by performing a write portion of the ECS procedure while a second refresh command is executed. The ECS procedure described herein may facilitate avoiding signaling conflicts or interferences that may occur between the ECS procedure and other memory operations.

Abstract: Embodiments herein include a first line, wherein the first line is complementary to a second line; a voltage generator configured to generate a first supply voltage, a second supply voltage and a third supply voltage, the third supply voltage is lower than the second supply voltage, the voltage generator further comprises a transistor structure with a plurality of transistors electrically connected in parallel from the first supply voltage to a supply output node that provides the second supply voltage; a memory cell electrically coupled to the first and second lines, the memory cell further comprises two cross-coupled transistor strings connected from the first supply voltage to a ground voltage; a pre-charger with a first pre-charger transistor cross-coupled to a second pre-charger transistor, the pre-charger is configured to pre-charge the first and second lines to a level of a source voltage.

Abstract: An operation method of a resistive memory device includes receiving write data and an address; determining whether the write data is in a first state or in a second state; applying a first pulse to a target memory cell corresponding to the address, among a plurality of memory cells, when the write data is in the first state; and selectively applying, when the write data is in the second state, a second pulse to the target memory cell according to a comparison result of the write data and pre-read data which is pre-stored data read from the target memory cell.

Abstract: Apparatuses and methods are provided for processing in memory. An example apparatus comprises a host and a processing in memory (PIM) capable device coupled to the host via an interface comprising a sideband channel. The PIM capable device comprises an array of memory cells coupled to sensing circuitry and is configured to perform bit vector operations on data stored in the array, and the host comprises a PIM control component to perform virtual address resolution for PIM operations prior to providing a number of corresponding bit vector operations to the PIM capable device via the sideband channel.

Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.

Abstract: Methods, apparatuses, and systems for staggering refresh operations to memory arrays in different dies of a three-dimensional stacked (3DS) memory device are described. A 3DS memory device may include one die or layer of that controls or regulates commands, including refresh commands, to other dies or layers of the memory device. For example, one die of the 3DS memory may delay a refresh command when issuing the multiple concurrent memory refreshes would cause some problematic performance condition, such as high peak current, within the memory device.

Abstract: A semiconductor memory device includes: a column of segments, each segment including bit cells; a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; each of the bit cells being connected correspondingly between the LWB and LWB_bar lines; and a distributed write driving arrangement including a global write driver connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line; and a local write driver included in each segment, each local write driver being connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line; and wherein: the global write driver and each local write driver is connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line.

Abstract: A delay tracking method and a memory system are provided. The delay tracking method is applied to a memory system supporting a low-frequency-mode (LFM) and a high-frequency-mode (HFM) of an operating clock. The delay tracking method includes the steps of selecting a LFM oscillator for obtaining a LFM delay value when the operating clock is in the HFM; and selecting a HFM oscillator for obtaining a HFM delay value when the operating clock is in the LFM.

Abstract: Methods, apparatuses, and systems for tensor memory access are described. Multiple data located in different physical addresses of memory may be concurrently read or written by, for example, employing various processing patterns of tensor or matrix related computations. A memory controller, which may comprise a data address generator, may be configured to generate a sequence of memory addresses for a memory access operation based on a starting address and a dimension of a tensor or matrix. At least one dimension of a tensor or matrix may correspond to a row, a column, a diagonal, a determinant, or an Nth dimension of the tensor or matrix. The memory controller may also comprise a buffer configured to read and write the data generated from or according to a sequence of memory of addresses.

Abstract: Techniques and mechanisms for providing termination for a plurality of chips of a memory device. In an embodiment, a memory device is an integrated circuit (IC) package which includes a command and address bus and a plurality of memory chips each coupled thereto. Of the plurality of memory chips, only a first memory chip is operable to selectively provide termination to the command and address bus. Of the respective on-die termination control circuits of the plurality of memory chips, only the on-die termination control circuit of the first memory chip is coupled via any termination control signal line to any input/output (I/O) contact of the IC package. In another embodiment, the plurality of memory chips are configured in a series with one another, and wherein the first memory chip is located at an end of the series.

Abstract: A differential type non-volatile memory circuit comprising a differential sensing circuit, a differential data line pair, a memory cell array, and a differential bit line pair is provided. The differential sensing circuit has a differential input terminal pair and a differential output terminal pair. The differential data line pair is electrically connected to the differential input terminal pair of the differential sensing circuit. The memory cell array has at least one differential non-volatile memory cell configured to store data. The differential bit line pair is electrically connected between the memory cell array and the differential data line pair. When logic states of the differential output terminal pair start to be different in a read operation phase of the memory cell array, the differential sensing circuit and the differential data line pair are disconnected.

Abstract: The disclosed controller includes a DDR architecture that includes a dual-channel interface designed to include DQS IO ports configured to generate a first DQS signal that is a distance of substantially 0.125 times the period of a clock signal (?T denoting the 0.125 of the period of the clock signal) ahead of a rising edge of the clock signal and a second DQS signal that is a distance of substantially 0.125 times the period of the clock signal behind the rising edge of a clock signal. If ?T is more than a tDQSS then ?T is set to tDQSS, where tDQSS is a maximum allowable time between either DQS signal and the rising edge of the clock signal.

Abstract: Devices and methods include receiving write command at a command interface of the semiconductor device to write data to memory. An external data strobe is received at a data strobe pin of the semiconductor device. The received external data strobe is divided into multiple phases using phase division circuitry to divide the data strobe into multiple phases to be used in writing the data to the memory.

Abstract: A user terminal includes a WiFi card and a communications card. The WiFi card includes a first electronic controller, an antenna in communication with the first electronic controller, the antenna of the WiFi card configured to receive a signal from a remote device. The communications card includes a second electronic controller, a connector configured to connect to an external communications device, and a power switch in communication with the second electronic controller and the connector, the second electronic controller configured to control the power switch to enable or disable power through the connector upon receiving instructions from the first electronic controller, based on the signal received by the antenna of the WiFi card.

Abstract: A circuit for reducing static power in SRAM and methods for using the same are disclosed. In one embodiment, a circuit for reducing static power in SRAM includes a plurality of memory blocks, where a memory block in the plurality of memory blocks includes a plurality memory banks, where a memory bank in the plurality of memory banks includes a plurality bit cells. The circuit further includes a bias circuit configured to produce a bias voltage to a row of bit cells, where the bias circuit is coupled to a circuit ground terminal of the row of bit cells in the plurality of bit cells, and a controller configured to control the bias circuit to produce a first set of bias settings in an access mode and control the bias circuit to produce a second set of bias settings in a standby mode of the SRAM.

Abstract: A read-only memory (ROM) device includes a memory cell that is electrically coupled to a bitline (BL) or to a BL which represents a complement of the BL. The ROM device precharges the BL and the BL to a first logical value. The ROM device activates the memory cell which discharges the BL when the memory cell is coupled to the BL or discharges the BL when the memory cell is coupled to the BL. The ROM device reads the first logical value as being stored within the memory cell when the BL is less than the BL. Otherwise, the ROM device reads the second logical value as being stored within the memory cell when the BL is greater than the BL.