Abstract: There is provided a semiconductor device including a first logic circuit to operate based on a first power supply and a second power supply, and a second logic circuit to operate based on the first power supply and a third power supply boosted from the second power supply. The second logic circuit includes a holding section to hold a value generated according to a first signal and a second signal operating asynchronously with respect to each other.

Abstract: A pulse generator circuit with ferroelectric memory element is disclosed that is optimized for printed, solution-processed thin film transistor processing. In certain embodiments, the circuit comprises dual thin film transistors that operate as a diode and resistor, respectively. Optionally, a third thin film transistor may be provided to operate as a pass transistor in response to an enable signal. The elements of the circuit are configured such that a rising pulse on an input node triggers an output pulse on an output node in the manner of a monostable multivibrator. The ferroelectric memory element is coupled to the output node such that a pulse on the output node may change a state of the ferroelectric memory element.

Abstract: According to one embodiment, during a transition to and from a state assumed while a signal is being received from outside a memory device at the terminal, a first pre-driver outputs a first signal which transitions at a lower rate than that during a transition to and from a state assumed while a signal is being output to outside the memory device at the terminal. During a transition to and from a state assumed while a signal is being received from outside the memory device at the terminal, a second pre-driver outputs a second signal which transitions at a lower rate than that during a transition to and from a state assumed while a signal is being output to outside the memory device at the terminal.

Abstract: Some embodiments include apparatuses and methods for activating a signal associated with an access line coupled to different groups of memory cells during a memory operation of a device, and for sensing data lines of the device during different time intervals of the memory operation to determine the value of information stored in the memory cells. Each of the data lines can be coupled to a respective memory cell of each of the groups of memory cells. In at least one of such apparatuses and methods, the signal applied to the access line can remain activated during the memory operation.

Abstract: A semiconductor device and a method for operating the same are provided relating to a nonvolatile memory device for sensing data using resistance change. The semiconductor device comprises a verification read control unit configured to sequentially output verification read data received from a sense amplifier into a global input/output line in response to a test signal, and a read data latch unit configured to store sequentially the verification read data received from the global input output line in response to a latch enable signal in activation of the test signal.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: To provide a semiconductor device which can perform initialization to a first state of two states of the first state and a second state, and which can generate a signal having a potential corresponding to the initialized first state. The present invention is the semiconductor device which can perform initialization to “0” (a first state) of two states of “0” and “1” (a second state), and which can generate a signal having a potential corresponding to initialized “0”. The semiconductor device 10 includes a plurality of flip-flop circuits 2 that are connected in parallel and which can hold the two states of “0” and “1”; and an AND circuit 3 which generates and outputs a signal having a potential corresponding to “0” when a state held in at least one flip-flop circuit 2 among the flip-flop circuits 2 is “0”. The AND circuit is connected to the flip-flop circuits 2.

Abstract: A semiconductor chip includes a memory array including a plurality of memory cells, a plurality of terminals including a plurality of test terminals to output a result of a specific test, and a circuit that outputs the result to a selected one of the plurality of test terminals based on a chip identification data.

Abstract: A semiconductor device comprises: a control signal generating circuit that generates and outputs a control signal that is in an active state during a period around at least one of rising edges and falling edges of a clock signal; and a data input circuit that is controlled to be in an active state, in which a data signal can be received, while the control signal is in an active state, and otherwise controlled to be in an inactive state.

Abstract: A memory device capable of being operated with a single potential uses capacitive coupling of a capacitor connected to a gate of a transistor for data writing. That is, the capacitive coupling is induced by inputting a signal, which is supplied by a delay circuit configured to delay a write signal having a potential equal to the power supply potential, to the capacitor. Increase in the potential of the gate by the capacitive coupling allows the transistor to be turned on in association with the power supply potential applied to the gate from a power supply. Data is written by inputting a signal having a potential equal to the power supply potential or a grounded potential to a node through the transistor.

Abstract: Described is an apparatus which comprises: a memory cell with a data port; and a logic gate, coupled to the data port of the memory cell, to generate a data word-line signal according to data on the data port and an asynchronous word-line signal, wherein the logic gate is operable to gate data on the data port during low power mode.

Abstract: A memory control module includes a read module configured to receive a first signal read from a first storage region of a memory cell, and receive a second signal read from a second storage region of the memory cell. A data detection module is configured to, based on a noiseless signal, detect respective data in each of the first storage region and the second storage region. The noiseless signal includes an ideal signal and an interference signal associated with at least one of the first signal and the second signal.

Abstract: An interconnection arrangement of nonvolatile memory devices is disclosed. In the arrangement, a plurality of memory devices are series-connected. A status of at least one of the plurality of memory devices is provided. The status includes “ready”, “busy”. The memory devices includes nonvolatile memories, such as, for example, flash memories.

Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.

Abstract: According to one embodiment, during a transition to and from a state assumed while a signal is being received from outside a memory device at the terminal, a first pre-driver outputs a first signal which transitions at a lower rate than that during a transition to and from a state assumed while a signal is being output to outside the memory device at the terminal. During a transition to and from a state assumed while a signal is being received from outside the memory device at the terminal, a second pre-driver outputs a second signal which transitions at a lower rate than that during a transition to and from a state assumed while a signal is being output to outside the memory device at the terminal.

Abstract: Apparatuses and methods are disclosed, including an apparatus with a first differential amplifier to amplify an input signal into a first output signal, a second differential amplifier to amplify the input signal into a second output signal that is complementary to the first output signal, and a feedback resistance coupled between the first output signal and the second output signal. Additional apparatuses and methods are described.

Abstract: A circuit is in a memory macro and comprises a write path, a read path, a selection circuit, and a clock generator circuit. The write path includes a first signal generated based on a first edge of a clock signal in a write operation of the memory macro. The read path includes a second signal generated based on a first edge of the clock signal in a read operation of the memory macro. The selection circuit is configured to select the first signal as a third signal in the write operation of the memory macro, and to select the second signal as the third signal in the read operation of the memory macro. The clock generator circuit is configured to generate a second edge of the clock signal in the write operation or in the read operation based on the third signal.

Abstract: A semiconductor device which can reduce the peak value of the rush current generated during a transition from resume mode to normal mode. The semiconductor device has a plurality of daisy-chained memory modules. Each of the memory modules includes a memory array, a switch for controlling, in resume mode, source voltage supply to a constituent element of the memory module, and a delay circuit which receives a resume control signal ordering a transition from resume mode to normal mode and outputs a resume control signal delayed from the inputted resume control signal to the memory module of the next stage.

Abstract: A program pulse generation circuit includes: a set pulse generator configured to apply a set pulse to an output node in response to a driving signal, a set pulse control signal, and a first switching signal, and a current controller configured to control step reductions forming the set pulse in response to the driving signal and a second switching signal.

Abstract: An integrated circuit includes an input pad configured to receive a low-speed signal and a high-speed signal, a high-speed buffer coupled to the input pad, a low-speed buffer coupled to the input pad, a strobe input unit configured to receive a strobe signal for indicating an input of the high-speed signal to the input pad, and a buffer control unit configured to control an activation of the high-speed buffer in response to the strobe signal.

Abstract: A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation.

Abstract: A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.

Abstract: A system including a memory cell array including a plurality of memory cells, and a writing device to generate multiple back-to-back write pulses to write to target memory cells from among the plurality of memory cells, the multiple back-to-back write pulses overlapping during an overlap duration, the overlap duration being adjustable based on a performance parameter of the memory cell array.

Abstract: A charge pump system includes a charge pump that receives its clock signals, generated by an oscillator circuit, though a clock buffer. The clock buffer is power-controlled to reduce power consumption and output voltage ripple. The buffer is formed of a series of inverter that are connected to the power supply level through a clamping element, such as a transistor whose gate is controlled by a regulation signal based on feedback from the pump's output.

Abstract: One or more timing signals used to time data and command transmission over highspeed data and command signaling links are paused or otherwise disabled when a memory system enters a low-power state, and require substantial time to be re-established at appropriate frequency and/or phase as the system returns to an active operating state. Instead of waiting for the high-speed timing signals to be re-established before beginning memory access operations, an alternative, lower-frequency timing source is used to time transfer of one or more memory-access commands over a combination of data and command signaling links while the high-speed timing signals are being restored, thereby hastening transmission of memory-access commands to memory devices and reducing the incremental latency required to exit the low-power state.

Abstract: A sense amplifier circuit is divided into a plurality of sense amplifier groups. The plurality of sense amplifier groups are each further divided into a plurality of sense units. A sense amplifier control circuit is configured to sequentially select the plurality of sense amplifier groups according to a physical address, and to sequentially select the plurality of sense units included in a selected sense amplifier group. The sense amplifier control circuit is configured to, when there is a defect related to a selected sense unit in a selected first sense amplifier group, select, in place of the first sense amplifier group, a sense unit included in a second sense amplifier group selected following after the first sense amplifier group.

Abstract: Disclosed herein is an apparatus that includes: a first terminal configured to receive a serial write data signal that includes at least four bits transferred in series with each other; a second terminal configured to receive a data strobe signal; a control circuit configured to produce a plurality of internal data strobe signals in response to the data strobe signal; and a serial-to-parallel conversion circuit configured to respond to the data strobe and internal data strobe signals to convert the serial write data signal into a parallel write data signal that includes at least four bits produced in parallel to each other.

Abstract: A chip die including a first input/output (I/O) pad configured to transmit/receive an I/O signal of a memory cell array included in the chip die; a second I/O pad configured to, if a stacked chip die exists on the chip die, transmit/receive a via I/O signal of the stacked chip die, and configured to, if the stacked chip die does not exist on the chip die, transmit/receive a differential I/O signal of the chip die; and an I/O driver configured to receive an operation mode signal including information as to whether the stacked chip die exists on the chip die in such a manner that the second I/O pad is configured to transmit/receive the via I/O signal or the differential I/O signal.

Abstract: A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices in response to global memory control signals having a format or protocol that is incompatible with the memory devices. The discrete memory devices can be commercial off-the-shelf memory devices or custom memory devices which respond to native, or local memory control signals. The global and local memory control signals include commands and command signals each having different formats. The composite memory device includes a system in package including the semiconductor dies of the discrete memory devices and the bridge device, or can include a printed circuit board having packaged discrete memory devices and a packaged bridge device mounted thereto.

Abstract: There is provided a command generation circuit. The command generation circuit includes a first driving unit driving an output node in response to an internal MRS command and a RAS idle signal; a second driving unit driving the output node in response to an off-signal; and a latch unit latching a signal at the output node in response to a power-up signal and generating an SRR command.

Abstract: A semiconductor memory apparatus includes a program pulse generation block configured to generate a first write control signal, second write control signal and a program completion signal in response to a programming enable signal; a set program control circuit configured to repeatedly generate a set programming enable signal a predetermined number of times in response to an erase command and the program completion signal; and a controller configured to disable the first write control signal in response to the erase command and generate the programming enable signal in response to the set programming enable signal.

Abstract: A semiconductor memory system includes a semiconductor memory configured to provide an external circuit with a plurality of refresh characteristic information and perform an auto-refresh operation in response to a plurality of auto-refresh commands, and a memory controller configured to provide the semiconductor memory with the plurality of auto-refresh commands generated according to the plurality of refresh characteristic information.

Abstract: A device includes a command decoder that is configured to output, in a normal operation mode, a precharge signal in response to a first type transition edge of a synchronous signal, and an active signal in response to a next first type transition edge that is next to the first type transition edge. The command decoder is configured to output, in a test mode, the precharge signal in response to a second type transition edge of the synchronous signal, and the active signal in response to a next first type transition edge that is next to the second type transition edge.

Abstract: A period signal generation circuit includes a first discharger configured to discharge first current from a control node which is driven in response to a first reference voltage, and a second discharger configured to discharge second current from the control node. The total current of the first and second currents is substantially constant when an internal temperature of the discharge controller is below a predetermined temperature, and the total current of the first and second currents varies as the internal temperature increases over the predetermined temperature.

Abstract: A period signal generation circuit includes a period signal generator configured to alternately charge and discharge a control node according to a level of the control node to generate a period signal, a discharge controller configured to discharge a first current having a constant value from the control node in response to a temperature signal and discharge a second current varying according to an internal temperature thereof from the control node in response to the temperature signal, and a tester configured to control a charging speed and a discharging speed of the control node.

Abstract: A clock signal generation apparatus for generating a reference clock signal for outputting data in synchronization with an external clock signal from a semiconductor memory device, including: a clock signal generation unit for receiving an internal clock signal to generate the reference clock signal according to a control signal; and a control unit for generating the control signal based on a read command, a write command and an external address.

Abstract: Provided are an equalizer and a semiconductor memory device including the same. The equalizer includes a delay circuit and an inverting circuit. The delay circuit is configured to output, in response to a select signal, one of a delay signal delaying an input signal applied to an input/output node and an inverted signal inverting the input signal. The inverting circuit is configured to invert a signal provided from the delay circuit and output the inverted signal to the input/output node. The equalizer is configured such that when the delay circuit outputs the delay signal, the equalizer operates as an inductive bias circuit amplifying the input signal and outputting the amplified input signal, and when the delay circuit outputs the inverted signal, the equalizer operates as a latch circuit storing and outputting the input signal.

Abstract: A semiconductor memory device includes a bulk voltage generation circuit configured to interrupt driving of a bulk voltage in response to an exit signal which is generated in synchronization with a time at which a power-down mode is ended, and discharge charges of a first node from which the bulk voltage is outputted, in response to the exit signal; and an internal circuit including a MOS transistor which is supplied with the bulk voltage.

Abstract: A data read start decision device includes: a storing circuit configured to store code key data; a read check circuit configured to output a read start signal in response to code key data read from the storing circuit, and a controller configured to start reading environment setting data from the storing circuit in response to the read start signal. The read check circuit is configured to at least one of: receive the read start signal from the controller and transfer the read start signal to the controller in response to the read code key data; and generate the read start signal based on the read code key data and output the read start signal to the controller.

Abstract: A semiconductor device includes: a non-volatile memory unit; a data bus configured to transfer data outputted from the non-volatile memory unit; a selection signal generation unit configured to generate a plurality of selection signals based on a clock; and a plurality of latch sets configured to each be enabled in response to a selection signal that corresponds to the latch set among the selection signals and store the data transferred through the data bus.

Abstract: One or more techniques or systems for boosting a read word line (RWL) or a write word line (WWL) of a two port synchronous random access memory (SRAM) bit cell array are provided herein. In some embodiments, a boosted control block is configured to generate a boosted word line signal configured to operate a RWL, a WWL, or a read write word line (RWWL). In some embodiments, the boosted word line signal includes a first stage and a second stage. For example, the first stage is associated with a first stage voltage level at a positive supply voltage (Vdd) voltage level and the second stage is associated with a second stage voltage level above the Vdd voltage level. In this manner, a read or write operation is boosted for an SRAM bit cell, because the second stage boosts a corresponding transistor in the SRAM bit cell, for example.

Abstract: Apparatuses, sense circuits, and methods for controlling a clock signal to a clock tree is described. An example apparatus includes a consecutive write command detection circuit configured to detect whether a next write command is received within a consecutive write command period of a current write command responsive to the current write command provided at an output of the write command register. The example apparatus further includes a clock signal control circuit coupled to the consecutive write command detection circuit and configured to control a clock signal to an input/output (I/O) latch based on whether the consecutive write command detection circuit detects that the next write command is within the consecutive write command period.

Abstract: Examples of devices and systems including enabling circuits are described. Two voltage supplies may be used to operate different portions of the devices, including peripheral circuits and I/O circuits. When the voltage supply to the peripheral circuits of one or more devices is disabled, the I/O circuits of that device may be disabled. In some examples, power may advantageously be saved in part by eliminating or reducing a DC current path through the I/O circuits.

Abstract: A semiconductor memory apparatus includes: a data output signal transmitter configured to receive a data signal and a data mask signal and transmit a data output signal through a global data line, the data output signal being outputted by determining whether the data signal is masked or not; and a write driver configured to receive the data output signal through the global data line and input the received data output signal to a local data line corresponding to the data output signal.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: A memory device having a plurality of cells, each of which stores a value, where the values of the cells are mapped to discrete levels and the discrete levels represent data, is programmed by determining a maximum number of cell levels in the memory device, and determining the set of values that are associated with each of the cell levels. The maximum number of cell levels for the memory device is determined by an adaptive programming system connected to the memory device, based on a plurality of cell values attained by at least one cell of the memory device, in response to voltage applied by the adaptive programming system to the cells of the memory device. The adaptive programming system associates, for each of the cell levels, a different set of cell values of the plurality of cell values attained by the cells to which voltage is applied.

Abstract: In a method, a first edge of a first tracking signal in a first direction of a memory array is generated. A first edge of a second tracking signal in a second direction of the memory array is generated. A first edge of a write-timing control signal is generated based on a slower edge of the first edge the first tracking signal and of the first edge of the second tracking signal. The first edge of the write-timing control signal is used to generate a second edge of the second tracking signal.

Abstract: Systems, methods, and computer program products for programmable reference cell selection for flash memory are disclosed. An exemplary system includes an array of interconnected cells and a flexible decoder. The array is configured to receive a selection signal as input, select a cell based upon the selection signal, and provide an output based on the selected cell. The flexible decoder is configured to receive an input, generate a selection signal based on the input and one or more characteristics of the array of interconnected cells, and provide the selection signal to the array of interconnected cells.

Abstract: A system for charging a low voltage power domain in a low power DRAM includes: a first capacitor, for providing a local domain power voltage supply; a first transistor, coupled to the first capacitor and a voltage supply and turned on by a powerdown signal, the first transistor for decoupling the first capacitor during powerdown mode, and charging the capacitor to provide the local domain power voltage supply when exiting powerdown mode; a second capacitor selectively coupled to the voltage supply or the local domain voltage power supply; and a second transistor, coupled to the second capacitor, the powerdown signal, and the local domain power voltage supply, for decoupling the second capacitor from the local domain power voltage supply during powerdown mode and coupling the second capacitor to the local domain power voltage supply when exiting powerdown mode.

Abstract: A built-in self-test circuit (BIST) applied to a high speed I/O port is provided. The BIST circuit includes a detecting unit, a flag unit and a selecting unit. The detecting unit has a first input terminal for receiving a serial output signal, a second input terminal for receiving a serial enable signal, and an output terminal for generating a detection signal. The flag unit receives the detection signal and generates a flag signal. The selecting unit receives the serial output signal, the serial enable signal and the flag signal. When a reset signal is at a first level, the selecting unit transmits the serial output signal and the serial enable signal to the I/O port. When the reset signal is at a second level, the serial output signal and the serial enable signal possesses a predetermined relationship.