Abstract: A thin-film organic laser, that includes: a substrate; a bottom mirror provided on the substrate; at least one active region deposited on the bottom mirror, wherein the at least one active region includes organic gain material; an external mirror provided at a predetermined distance from the at least one active region such that the bottom mirror combined with the external mirror forms a laser resonator; and an optical pumping means for exciting the organic gain material to produce a laser beam with a wavelength &lgr; and at least one lateral laser mode in the laser resonator and an output of laser light.

Abstract: A vertical cavity laser light producing device includes a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths; and an active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths; and the active region includes one or more periodic organic gain region(s) and inorganic spacer layers disposed on either side of the periodic organic gain region(s) and arranged so that the periodic organic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field.

Abstract: A structure and method of enhancing optical emissions and optical energy comprising a metal layer having a first surface comprising a plurality of voids, said voids having a dimension less than the wavelength of optical energy being processed.

Abstract: An optically pumped laser oscillator or amplified, comprising: a laser head including a gain medium exhibiting polarization-dependent absorption along two crystallographic axes; a pump source producing a pump beam wherein the medium's absorption coefficients along both said crystallographic axes are equal or the difference between the absorption coefficients relative to the lowest absorption coefficients R=Abs(&agr;c−&agr;a)/(min(&agr;c,&agr;a)) is reduced at least by a factor of two compared to the same relative difference between the two absorption coefficients at the medium's absorption peaks, used for conventional pumping either by pumping with unpolarized or partially polarized pump light at a wavelength around which the average absorption coefficients along both of said crystallographic axes are equal or present a relative difference that is reduced by a factor of two or better compared to conventional pumping around the medium's absorption peaks or by pumping with a combination of two pump

Abstract: An optically-pumped laser having a gain medium configured to provide a low loss, three-dimensional integrated optical pump cavity that substantially confines optical pump radiation within the lasing volume, which is particularly useful for efficiently pumping solid state gain media that has low pump dopant concentration. The integrated pump cavity includes a plurality of boundaries contiguous with the gain medium. An optical pump source such as a laser diode array supplies optical pump radiation that is input into the gain medium through one or more pump cavity windows with a propagation direction transverse to a laser axis defined through the gain medium. In some embodiments, an optical surface is situated opposite the window to approximately recollimate the input pump radiation. The optical pump cavity may be designed to concentrate the optical pump radiation and approximately uniformly pump the entire volume of the lasing medium.

Abstract: A zinc oxide (ZnO) based nanorod is provided. The ZnO based nanorod has a quantum well or a coaxial quantum structure and is formed by alternately laminating two or more layers selected from the group consisting of a zinc oxide layer; and a layer of a material which has a lattice constant similar to that of zinc oxide, at one or more cycle.

Abstract: In a solid state, optically end-pumped laser, the laser gain medium has a tapered diameter to minimize the maximum path length of barrelling amplified stimulated emission (ASE), and a roughened surface region at one end to scatter barrelling ASE out of the gain medium; thereby minimizing the negative effective of barrelling ASE's, and inhibiting the trapping of rays with a large longitudinal component, but disallowing a cyclic, i.e. repeated, pass path with specular reflections.

Abstract: A laser device employs a laser slab having an ionic layer and a nonionic layer, joined through an optical-quality interface. The laser slab has a trapezoidal cross-section in a direction perpendicular to the optical-quality interface. Thermal conductivity away from the ionic layer is enhanced through the thinness of the ionic layer and through the use of a heatsink attached to the ionic layer. Optical power input through the nonionic layer and into the ionic layer is further increased through the use of the trapezoidal cross section.

Abstract: An optical amplifier and laser having both broad band and wide range specific band capability can be based on semiconductor nanocrystal solids.

Abstract: A vertical cavity laser light producing device includes a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths; and an active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths; and the active region includes one or more periodic organic gain region(s) and inorganic spacer layers disposed on either side of the periodic organic gain region(s) and arranged so that the periodic organic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field.

Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.

Abstract: To provide a laser oscillator that has an oscillation wavelength in a visible region, and can enhance a conversion efficiency of photon output, and further suppress power consumption. The laser oscillator comprises a light emitting element formed on a substrate, and an optical resonator. The light emitting element includes a luminescent layer, an anode and a cathode, in which the luminescent layer is interposed between the anode and the cathode. The luminescent layer comprises a host material and a phosphorescent material, which is dispersed into the host material at a concentration of not smaller than 10 wt %. The anode and the cathode comprises a light transmitting property. In luminescence from the excimer state of the phosphorescent material, unidirectional light that intersects with the luminescent layer is amplified by the optical resonator.

Abstract: An eyesafe, Q-switched, laser system for target identification, ranging, and gated viewing purposes features a Resonant Pumped Erbium (RPE) laser, which exhibits a longer storage lifetime that minimizes the number of diodes needed to pump optical parametric oscillators (OPOs) or Raman converters. The RPE laser is in band to I2 devices.

Abstract: A white-light laser integrated structure that includes a substrate; and one or more individually addressable laser light pixels formed on the substrate for emitting a white beam of laser light perpendicular to the substrate. Each of the one or more individually addressable laser light pixels include one or more organic light emitting diodes (OLEDs) and a plurality of organic vertical cavity lasers that are arranged to be optically pumped by the one or more OLEDs. The plurality of organic vertical cavity lasers emits differently colored light and the one or more individually addressable laser light pixels emit substantially white light when the differently colored light is combined.

Abstract: An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.

Abstract: A novel laser apparatus is disclosed which pertains to laser resonator geometries possessing circular symmetry, such as in the case of disk or spherical lasers. The disclosed invention utilizes multi-layer dielectric (MLD) thin film reflectors of many layer pairs of very small refractive index difference, the MLD deposited on a surface of revolution, thereby forming an optical cavity. These dielectric reflectors are disposed in such a way as to allow selection of preferred low order modes and suppression of parasitic modes while allowing a high cavity Q factor for preferred modes. The invention disclosed, in its preferred embodiments, is seen as particularly useful in applications requiring high efficiency in the production and coupling of coherent radiation. This is accomplished in a cavity design that is relatively compact and economical.

Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Abstract: A solid-state laser device, which comprises a first resonator for projecting a first laser beam and a second resonator for projecting a second laser beam, wherein the first resonator and the second resonator commonly share a part of an optical axis and an output mirror, and which comprises a first light emitting unit for the first resonator, a second light emitting unit for the second resonator, a monitoring means for splitting and monitoring a part of the first laser beam and for splitting and monitoring a part of the second laser beam among the laser beams projected from the output mirror, and a control unit for controlling at least one of the first light emitting unit and the second light emitting unit based on a detection result from the monitoring means.

Abstract: An electronic imaging system for providing a view able color image from an image data stream, including: a plurality of different colored laser light sources arranged in an at least one array with each such colored laser light source including a vertical cavity design; at least one area light valve for receiving the laser light and producing the view able color image from the image data stream; and a projection lens for projecting the view able color image onto a target plane.

Abstract: In a laser device and a light signal amplifying device with an optical fiber containing a laser activating substance in the inside for emitting a light beam from the end part in the case the laser activating substance is excited, fixed in a dense state at least partially by an optical medium, a polysilsesquioxane including a repeating unit represented by a general formula RSiO1.5 (wherein R represents an alkyl group, a hydroxyl group, a phenyl group, a vinyl group, a 2-chloroethyl group, a 2-bromoethyl group, a hydrogen, a heavy hydrogen, a fluorine, or an oxygen. However, one having R entirely as an oxygen is excluded. Moreover, R may be different per each repeating unit.) is used as the optical medium.

Abstract: A light-emitting device includes a substrate and a light-emitting device section. The light-emitting device section includes a light-emitting layer capable of emitting light by electroluminescence, a pair of electrode layers for applying an electric field to the light-emitting layer, an optical section for propagating light generated in the light-emitting layer in a specific direction, and an insulation layer disposed between the pair of electrode layers, having an opening formed in part thereof and can function as a current concentrating layer for specifying a region through which current to be supplied to the light-emitting layer flows via a layer in the opening. The optical section has a defect section which forms photonic bandgaps capable of inhibiting a three-dimensional spontaneous emission, and the energy level of the defect section, caused by the defect, is set to be within a specific emission spectrum.

Abstract: A random laser system includes Critical Solution Temperature (CST) material, either a Lower CST (LCST) or an Upper CST (UCST) material, in combination with an optical gain medium, such as a laser dye. A laser-like emission is observed in response to optical pumping only when the CST material is in a scattering state. The random laser is suitable for being microencapsulated, and can be used for, as examples, remote temperature sending applications as well as for visual display applications.

Abstract: A solid-state laser device, comprising two or more resonators for outputting laser beams on a same axis, a first light emitter and a second light emitter for entering excitation light to each of the resonators, a photodetector for monitoring which monitors the outputted laser beams, and a control unit for performing constant output control of at least one of the first light emitter and the second light emitter based on a signal from the photodetector for monitoring.

Abstract: Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.

Abstract: An organic vertical cavity laser device includes a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate, and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and a thermally conductive transparent layer disposed between the bottom dielectric stack and the organic active region or between the top dielectric stack and the organic active region or both.

Abstract: Lasing at the edge of the reflection band or at a defect state within the reflection band of a thin one-dimensional feedback structure is used to create a large-area, thin-film laser source with transverse dimensions that can be much greater than the film thickness. Angular confinement of radiation propagating perpendicular to the layers leads to a spreading of the beam inside the medium which is much greater than the diffraction divergence. This enhances the spatial extent of correlation at the output surface of the thin film. When a pump source induces gain at the lasing threshold in a wide region, a spatially coherent monochromatic light beam is emitted perpendicular to the film surface from the entire gain region. Alternate embodiments of the present invention include a passive spatial filter and an active amplifier.

Abstract: An electrically controlled variable reflectance mirror that includes a Pockels cell which enables its retardation or birefringence to be controlled in order to vary the light outcoupled from a laser cavity. Since the retardation is a function of the voltage applied to the Pockels cell, the voltage can be used to control the fraction of the output beam that is outcoupled from the laser cavity. The Pockels cell is formed with a constant reflectivity profile to form an electrically controlled uniform reflectivity electro-optic mirror. In an alternate embodiment of the invention, the Pockels cell is configured with spatially varying retardation to form an electrically controlled graded reflectivity electro-optic mirror. Both embodiments of the invention enable a lasing system, such as a solid state lasing system, to be operated over a relatively wide range of operating parameters utilizing a single set of optics.

Abstract: The invention provides a light emitting device which can improve image quality by reducing outside lights reflection or reflection of outside scenes. The light emitting device has a resonator structure which resonates lights generated in a light emitting layer between a first end and a second end to extract these lights from the second end side. Respective strengths and phases of reflected lights of an outside light on the first end side and the second end side, are adjusted so that reflectance of the outside light in a resonant wavelength which is incident from the second end side becomes 20% or less. Specifically, construction is made so that their strengths are almost the same, and their phases are approximately inverted. The strengths of the reflected lights are adjusted by materials and thicknesses of a first electrode and a second electrode. The phases of the reflected lights are adjusted by an optical distance between the first end and the second end.

Abstract: A laser includes a first optically reflective element; a second optically reflective element opposed to and aligned with the first optically reflective element to define a laser cavity having an optical axis; an optical pump source for injecting optical pump energy into the laser cavity along the optical axis; a solid-state dye gain element having a thin host in which a dye is dissolved that is interposed between said first and second optically reflective elements along the optical axis for transforming the optical pump energy into a resonant optical signal; and a cooling element in thermal contact with the solid-state dye gain element for absorbing heat energy from the solid-state dye gain element to control the temperature of the solid-state dye gain element.

Abstract: A diode pump, solid state laser deep UV laser source is described for customized ablation in photo-refractive surgery. The solid-state deep UV laser source is tailored to have a pulse repetition rate of about 1 kHz and a relatively small spot size at both positions of the cornea and the scanner. Such a deep UV laser source enables the use of fast scanner and the implement of fast eye tracker. One embodiment of such a deep UV laser source comprises a passively Q-switched microchip laser, a diode-pumped multiple pass amplifier, and a wavelength converter.

Abstract: A gain medium for producing a light emission in a laser. The gain medium comprises a dye-doped polymer nanoparticle matrix. In a preferred embodiment, the gain medium comprises a Rhodamine-doped PMMA-silica matrix.

Abstract: A gain medium for producing a light emission in a laser. The gain medium comprises a dye-doped polymer nanoparticle matrix having an absolute value of dn/dT less than an absolute value of dn/dT of its dye-doped polymer matrix.

Abstract: A solid state laser includes an optical waveguide and a laser cavity including at least one subwavelength mirror disposed in or on the optical waveguide. A plurality of photoluminescent nanocrystals are disposed in the laser cavity. The reflective subwavelength mirror can be a pair of subwavelength resonant gratings (SWG), a pair of photonic crystal structures (PC), or a distributed feedback structure. In the case of a pair of mirrors, a PC which is substantially transmissive at an operating wavelength of the laser can be disposed in the laser cavity between the subwavelength mirrors to improve the mode structure, coherence and overall efficiency of the laser. A method for forming a solid state laser includes the steps of providing an optical waveguide, creating a laser cavity in the optical waveguide by disposing at least one subwavelength mirror on or in the waveguide, and positioning a plurality of photoluminescent nanocrystals in the laser cavity.

Abstract: An organic vertical cavity laser light producing device (10) comprises a substrate (20). A plurality of laser emitters (200) emits laser light in a direction orthogonal to the substrate. Each laser emitter within the plurality of laser emitters has a first lateral mode structure in a first axis orthogonal to the laser light direction and has a second lateral mode structure in a second axis orthogonal to both the laser light direction and the first axis. Each laser emitter comprises a first mirror provided on a top surface of the substrate (20) and is reflective to light over a predetermined range of wavelengths. An organic active region (40) produces laser light (350). A second mirror is provided above the organic active region and is reflective to light over a predetermined range of wavelengths. A pumping means excites the plurality of laser emitters.

Abstract: A three-dimensional photonic crystal add-drop filter apparatus has a three-dimensional photonic crystal, a first waveguide for transmitting light having a frequency within a bandgap of the three-dimensional photonic crystal, and a second waveguide. A resonant cavity couples the light in the first waveguide to the second waveguide for extracting at least one wavelength of the light transmitted in the first waveguide and redirecting the extracted light to the second waveguide. The apparatus has a full three-dimensional bandgap and thus does not require total internal reflection to confine the light as is required in a two-dimensional photonic crystal slab. The waveguides can be made single mode such that only one polarization is allowed to propagate thus avoiding mixing of the two polarizations.

Abstract: An organic vertical cavity phase-locked laser array device includes a substrate, a bottom dielectric stack reflective to light over a predetermined range of wavelengths, and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and a patterned reflectance modulator formed on a surface of the substrate to define an array of spaced laser pixels which have higher reflectance than the interpixel regions and causes the array to emit coherent phase-locked laser light.

Abstract: An organic laser cavity device, that includes: a first dielectric stack for receiving and transmitting pumped beam light and being reflective to laser light over a predetermined range of wavelengths and having a substantially low threshold for optical excitation; an organic active region for receiving the transmitted pumped beam light and laser light from the first dielectric stack, and emits the laser light; a second dielectric stack for reflecting the transmitted pumped beam light and the laser light from the organic active region back into the organic active region, wherein a combination of the first and second dielectric stacks and the organic active region outputs the laser light; and an external self-contained photon source of the pumped beam light cooperating with the organic laser cavity for optical excitation at the substantially low threshold.

Abstract: A system for mechanically tuning optical wavelengths emitted from an organic laser cavity device, that includes: a multi-layered film structure, wherein the multi-layered film structure is pumped by an incoherent source of photons; and a micro-electromechanical mirror assembly proximate to the multi-layered film structure, wherein the micro-electromechanical mirror assembly varies the cavity length of the organic laser cavity device.

Abstract: A thin-film organic laser, that includes: a substrate; a bottom mirror provided on the substrate; at least one active region deposited on the bottom mirror, wherein the at least one active region includes organic gain material; an external mirror provided at a predetermined distance from the at least one active region such that the bottom mirror combined with the external mirror forms a laser resonator; and an optical pumping means for exciting the organic gain material to produce a laser beam with a wavelength &lgr; and at least one lateral laser mode in the laser resonator and an output of laser light.

Abstract: An organic laser cavity structure is described, comprising a plurality of organic laser cavity devices, each organic laser cavity device characterized by: i) a first dielectric stack for receiving and transmitting pump beam light and being reflective to laser light over a predetermined range of wavelengths; ii) an organic active region for receiving transmitted pump beam light from the first dielectric stack and for emitting light; iii) a second dielectric stack for reflecting transmitted pump beam light and laser light from the organic active region back into the organic active region, wherein a combination of the first and second dielectric stacks and the organic active region produces the laser light; and a predetermined arrangement of the plurality of organic laser cavity devices, such that a desired laser output is obtained.

Abstract: A vertical cavity organic laser device, that includes: an organic laser cavity including: a bottom dielectric stack for receiving and transmitting pump beam light and being reflective to laser light over a predetermined range of wavelengths; an organic active region for receiving transmitted pump beam light from the bottom dielectric stack and for emitting the laser light; a top dielectric stack for reflecting transmitted pump beam light and laser light from the organic active region back into the organic active region, wherein a combination of the bottom and the top dielectric stacks and the organic active region produces the laser light; the device further including an external pump beam light source for optically pumping light to the organic laser cavity; and a positioner for locating the organic laser cavity in a spaced relationship to the external pump beam light source.

Abstract: A display system for providing a user viewable visible image, includes a view screen for receiving organic laser light and having a diffusing optical element so that the view screen, in response to organic laser light, produces a viewable visible image, wherein the diffusing optical element includes a viewing angle greater than 160° in a first viewing direction and greater than 100° in a second viewing direction orthogonal to the first direction; one or more organic laser light sources arranged in an array with each such laser light source including a vertical cavity design and means for projecting and modulating the intensity of the organic laser light from the array onto the view screen in a pattern to cause a visual image to be produced by the view screen; and means associated with the view screen for reducing speckle in the organic laser light.

Abstract: A semiconductor laser adapted for telecommunications applications. The opitical mode delivered by the laser has a high power output beam and a narrow far field, thus, enabling efficient coupling of the laser into small numerical aperture optical fibers. The laser is made up of a semiconductor heterostructure and one or more optical trap layers.

Abstract: A laser apparatus, comprising a layer fabricated of a lasing medium, the layer having a top surface and a bottom surface, and a first substrate layer fabricated of a laser-inactive material, the first substrate being diffusion-bonded to the layer of lasing medium, wherein the lasing medium comprises a crystalline, polycrystalline or glass material doped with ions. The lasing medium selected for fabrication of the laser apparatus of this invention comprises neodymium-doped yttrium vanadate material and laser-inactive material of the substrate comprises an yttrium-aluminate or yttrium vanadate material. The layers of material are oriented so that the thermal expansion coefficients along the crystallographic axes of the materials match or nearly match.

Abstract: Room temperature lasing from optically pumped single defect in a two-dimensional photonic bandgap crystal is illustrated. The high Q optical microcavities are formed by etching an array of air holes into a half wavelength thick multiquantum well waveguide. Defects in the two-dimensional photonic crystal or used to support highly localized optical modes with volumes ranging from 2 to 3 (&lgr;/2n)3. Lithographic tuning of the air hole radius and the lattice spacing is used to match the cavity wavelength to the quantum well gain peak, as well as to increase cavity Q. The defect lasers were pumped with 10-30 nsec pulse of 0.4-1 percent duty cycle. The threshold pump power was 1500 milliwatts. The confinement of the defect mode energy to a tiny volume and the enhancement of the spontaneous emission rate make the defect cavity an interesting device for low threshold, high spontaneous emission coupling factor lasers, and high modulation rate light emitting diodes.

Abstract: A stray light cutting structure for an optical device provided with an optical component through which a predetermined light beam travels in parallel to the optical axis of the optical device is provided. The structure is for cutting stray light, which travels at an angle to the optical axis of the optical device to enter the optical component through one end face thereof, and includes at least one notch formed on one side face of the optical component.

Abstract: A laser uses a rare-earth doped phosphate laser glass characterized by a particularly high rare-earth content to generate the highest possible output power/energy pulses. The laser glass is composed primarily of P2O5, Al2O3, and alkaline earth and alkali earth oxides, and possesses other properties such as physical and thermal properties that are compatible with melting and manufacturing methods. The laser glass can be used in high power and high energy laser systems where laser action is achieved in rod or slab shaped components as well as in waveguide or thin film structures prepared by structuring technologies such as sputtering, ion exchange, and/or direct writing with a femtosecond laser.

Abstract: A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16).

Abstract: A vertical cavity light-producing device which, in response to incident external light, produces quasi-laser light with an enlarged spectral linewidth selected to improve power conversion efficiency, including a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths; and an organic active region for producing quasi-laser light. The device also includes a top dielectric stack spaced from the bottom stack reflective to light over a predetermined range of wavelengths; the active region includes one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field; and the top or bottom dielectric stack being selected so that it's peak reflectance is less than 99% and the device's spectral linewidth is increased but produces an acceptable level of spontaneous emission.

Abstract: The invention relates to a microlaser cavity (10) having: a solid active medium (2) emitting at least in a wavelength range between 1.5 and 1.6 &mgr;m, and a saturable absorber (4) of formula CaF2:Co2+ or MgF2:Co2+ or SrF2:Co2+ or BaF2:Co2+ or La0.9Mg0.5-xCoxAl11.433O19 or YalO3:Co2+ (or YAl5-2xCoxSixO3 YAl(1-2x)CoxSixO3) or Y3Al5-x-yGaxScyO12:Co2+ (or -3Al5-x-y2zGaxScyCozSizO12 Y3Al5-x-y-2zGaxScyCozSizO12) or Y3-xLuxAl5O12:Co2+ (or Y3-xLuxAl5-2yCoySiyO3) or Sr1-xMgxLayAl12-yO12:Co2+ (or Sr1-xMgx-yCoyLazAl12-zO12, with 0<y<x) Sr1-xLaxMgxAl12-xO19:Co2+ (or Sr1-xLaxMgx-yCoyAl12-xO19 , with 0<y<x).