Abstract: An organic light emitting device is provided. The device includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes material having the structure: M is a metal having an atomic weight greater than 40, m is at least 1, n is at least zero, R″ is H or any substituent, X is an ancillary ligand, and A is selected from the group consisting of aryl and heteroaryl rings, and B is an aryl ring. A material including the photoactive ligand of the above material is also provided.

Abstract: An organic vertical cavity phase-locked laser array device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and an etched region formed in a surface of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits coherent phase-locked laser light.

Abstract: A narrow linewidth fluorescent emitter can incorporate a chromophore into a microcavity that can support low-order optical modes.

Abstract: An optical semiconductor device is constructed on a Si substrate and includes an active layer of a SiGeC mixed crystal in which Si, Ge and C atoms are distributed at random.

Abstract: The inventive chiral laser achieves lasing by placing an electro-luminescent emitting layer with quarter wave plate properties and a layer of cholesteric liquid crystal (CLC) between two electrodes. The electrode connected to the emitting layer is highly reflective and serves as a source of electrons, while the second electrode, connected to the hole-transporting CLC, serves as a source of holes. The recombination of electrons and holes in the emitting layer produces luminescence. If a right handed CLC structure is used, then right circularly polarized emission is reflected from the CLC as right circularly polarized light, and then converted to linear polarized light by passing through quarter wave plate emitting layer. It is then reflected by the electrode and converted again into the right circularly polarized light in a second pass through the quarter wave plate emitting layer.

Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Abstract: An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. The device also includes the active region in which is contained one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field.

Abstract: A chiral fiber laser implemented in a fiber Bragg grating mimicking the advantageous optical properties of a cholesteric liquid crystal structure is provided. The dopant, the pitch, the core cross section and dimensions thereof, of the inventive chiral fiber laser as well as the core and cladding materials used in construction thereof, may be advantageously selected and configured to enable the inventive chiral fiber laser to produce lasing at a desirable wavelength. In another embodiment of the inventive chiral fiber laser, a tunable defect is introduced to provide tunable lasing corresponding to the wavelength at the defect mode. Multiple embodiments using coupled fiber optical pumping as well as direct optical pumping for excitation of the inventive chiral fiber laser are provided.

Abstract: The invention includes an electrically pumped polycrystalline ZnO laser and it's fabrication procedure. A film of ZnO is grown on a suitably adapted polycrystalline underlayer in which the grains are surrounded by electrically insulating boundaries.

Abstract: A laser emitting apparatus includes an incoherent light-emitting device having a light-emitting layer wherein an electric field is applied across the light-emitting layer to produce light which is transmitted out of the incoherent light-emitting device and a vertical laser cavity structure disposed to receive light transmitted from the incoherent light-emitting device and produce laser light.

Abstract: The invention provides an improved glass host for a Pr3+-doped glass 589 nm laser. For this purpose, a fluoroaluminate glass, of certain composition ranges, has been determined per the invention. Results indicate good lasing intensity at 589 nm in such fluoroaluminate glass host, particularly at elevated temperatures. The glass can be in the form of fiber, glass rod, or wave-guide.

Abstract: The invention relates to a new configuration for a laser resonator for use in combination with a solid-state laser gain medium contained within the core of a planar waveguide. The resonator has a substantially confocal negative branch unstable resonator configuration in a lateral direction, a low loss waveguide resonator configuration in a transverse direction, and the focal point of the unstable resonator is disposed outside the planar waveguide to avoid optical damage or breakdown in the gain medium. The preferred embodiment includes an effective means of transverse mode selection for the case when the planar waveguide is of the multi-mode type. The invention also provides a new low loss waveguide resonator configuration which may be used with planar waveguide gas lasers.

Abstract: As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed.

Abstract: Composite lasers made of contiguous layers of pure and doped polycrystalline ceramics are introduced. The close thermal contact between such layers of the same ceramic allows an efficient and low cost way to take full advantage of the higher allowed dopant concentrations and, therefore, of the higher maximum output laser power afforded by polycrystalline ceramic lasers. Many novel, unique examples are provided, which demonstrate the versatility and commercial merit of polycrystalline ceramic composite lasers.

Abstract: A solid-state laser having an excitation light source, a lens system for focusing an excitation light produced from the light source, and a laser resonator which is laser-oscillated in response to the focused excitation light. The resonator includes only a gain medium and a solid-state medium having dispersion of a wavelength dependence opposite to that of the gain medium, and surfaces of the gain medium and the solid-state medium, which are respectively at opposite sides of opposing surfaces of the gain medium and the solid-state medium, are reflectively coated and act as mirror surfaces. At least one of the other surfaces of the gain medium and the solid-state medium, which are positioned inside the resonator and are opposite to each other, is polished to a curved surface. The gain medium is excited by the focused excitation light so that the laser oscillation is made in the resonator.

Abstract: An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.

Abstract: A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately.

Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

Abstract: An organic semiconductor laser device is composed of a positive electrode layer, an electron hole-transporting layer, a light-emitting layer containing an organic dye and having an open end, an electron-transporting layer, and a negative electrode layer in order. The electron hole-transporting layer and the electron-transporting layer satisfy the conditions of 1<n1/n2 and 1<n1/n3 (n1 is a refractive index of the light-emitting layer determined at a wavelength of the light emitted in the light-emitting layer, n2 is that of the electron hole-transporting layer, and n3 is that of the electron-transporting layer) and further satisfy the conditions; 0.

Abstract: A micro-optical resonator type organic light-emitting device comprising a substrate, and a multi-layered thin film, a transparent electrode, an organic light-emitting layer and a back electrode disposed on the substrate. If 0-mode resonance wavelength of the organic light-emitting device is expressed by &lgr;0, n-mode resonance wavelength of the organic light-emitting device is expressed by &lgr;n (in which n is a positive integer) and reflectivity of the multi-layered thin film against light having a wavelength &lgr; is expressed by R(&lgr;), R(&lgr;0) is 40% or more and R(&lgr;1) or R(&lgr;2) is 30% or less.

Abstract: A laser system and method having an output laser beam uses an gain medium with one or more output beam transverse profile tailoring (OBTPT) longitudinal strips to tailor the transverse profile of the output laser beam to a desirable shape such as having a symmetrical profile transverse to the direction of propagation of the output laser beam. The laser system has two reflector systems on opposite ends in the long z-axis dimension of the gain medium to form a resonator that outputs the output laser beam following the same long z-axis dimension. In some embodiments the gain medium has a narrow y-axis dimension and a wide x-axis dimension. In these embodiments the OBTPT longitudinal strips have lengths running the long z-axis dimension, widths running the wide x-axis dimension and thicknesses running the narrow y-axis dimension of the gain medium. The widths of the OBTPT longitudinal strips are generally chosen with respect to coupling width of the output laser beam.

Abstract: A laser device which may be used as an oscillator or amplifier comprising a chamber having a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state elements containing active laser ion distributed within the volume. A cooling fluid flows about the solid-state elements and a semiconductor laser diode provides optical pump radiation into the volume of the laser chamber such that laser emission from the device passes through the gain medium and the fluid. The laser device provides the advantages of a solid-state gain medium laser (e.g., diode-pumping, high power density, etc), but enables operation at higher average power and beam quality than would be achievable from a pure solid-state medium.

Abstract: A laser device and methods of lasing, the laser device comprising a chamber containing a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state portions containing active laser ion suspended within a fluid which exhibits a refractive index which is substantially similar to that of the solid-state portions. In a variation, the gain medium is flowed through the volume, cooled externally of the volume and then flowed back through volume. In preferred form, the solid state portions are either naturally suspended within the fluid or are suspended by flow within the fluid. Thus, laser devices are provided in which the laser and the coolant are homogenized into a single gain medium exhibiting thermal properties of a liquid laser but with solid state gain material in order to produce high energy and high average power.

Abstract: An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light, and having an organic active region including emissive material; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. Pump-beam light is transmitted and introduced into the organic active region through at least one of the dielectric stacks. The organic active region includes one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field, and wherein the spacer layers are substantially transparent to the laser light.

Abstract: The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide proportionately. Strategic facets cut at the edges of the laminated gain medium provide a method by which the pump light introduced through edges of the composite structure is trapped and passes through the gain medium repeatedly. Spontaneous emission escapes the laser volume via these facets. A multi-faceted disk geometry with grooves cut into the thickness of the gain medium is optimized to passively reject spontaneous emission generated within the laser material, which would otherwise be trapped and amplified within the high index composite disk. Such geometry allows the useful size of the laser aperture to be increased, enabling the average laser output power to be scaled.

Abstract: To provide a laser oscillation method and a laser device, which use a laser medium such as an Nd:GdVO4 crystal to which neodymium is doped in high concentration exceeding 1% in atomicity ratio, the laser medium comprised of the gadolinium-vanadate crystal to which neodymium as laser active ion is doped by a floating zone method such that concentration becomes exceeding 1% in atomicity ratio.

Abstract: An organic vertical cavity phase-locked laser array device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and an etched region formed in a surface of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits coherent phase-locked laser light.

Abstract: The invention relates to a pump chamber (2), in which laser active medium is stored. The pump light is introduced into said pump chamber (2), by means of one or several fluid light guides (12), whereby the fluid used as a light guide is used as coolant for the laser active medium (1).

Abstract: An elongated structure includes a core, at least one and preferably a plurality of gain medium layers disposed about said core for providing a plurality of characteristic emission wavelengths, and a growth matrix or functionalized support suitable for the synthesis therein or thereon of a chemical compound. Other embodiments can be spherical, or planar with a plurality of optical gain medium dots, each providing a different emission wavelengths. Also disclosed is a technique for selectively locating micro-laser beads of interest, and then aiming a laser source at the bead(s) of interest in order to interrogate the optically encoded identification information. Also disclosed is a bead of a type that includes a functionalized support, and that further includes a gain medium coupled to a structure that supports the creation of at least one mode for electromagnetic radiation, and/or which has a dimension or length in one or more directions for producing and supporting amplified spontaneous emission (ASE).

Abstract: A third harmonic laser system includes a fundamental wave resonator for generating fundamental laser beam, a second harmonic laser generator for converting fundamental laser beam to a second harmonic laser beam, and a third harmonic laser generator for mixing the second harmonic laser beam with the fundamental laser beam so as to produce a third harmonic laser beam. Multi-pass tripling is used for producing the third harmonic laser beam by means of reflecting and polarizing mirrors, and that the outputted third harmonic laser beam has a high efficiency of about 51% and a high power up to 8.6W.

Abstract: A laser amplifier includes a gain medium of a glass fiber, a first exciting light source, a second exciting light source, and another first exciting light source. The gain medium of the glass fiber includes rare earth dopant in a host medium. Ions of the rare earth dopant has an energy level structure including a ground level and a pair of laser upper level and laser lower levels between which a stimulated transition is to be produced after production of a population inversion between the pair of laser upper and laser lower levels. The pair of laser upper and laser lower levels being higher than the ground level. The first exciting light source is coupled to the input side of the glass fiber for introducing first exciting light to the glass fiber to produce the population inversion.

Abstract: A nonlinear Yb:YAB laser material is disclosed. The material is capable of generating fundamental o-polarized first wavelength laser light and frequency doubled e-polarized second wavelength laser light, the material being oriented for type 1 phase matching of the first wavelength laser light. Also disclosed is a laser system. The system comprises a pumping light source emitting a pumping beam of light, a laser cavity having an input coupler operatively disposed with respect to the light source so as to couple the pumping beam of light into the cavity, and a nonlinear Yb:YAB laser material capable of lasing in response to a pumping beam of light thereby generating fundamental o-polarized first wavelength laser light and frequency doubled e-polarized second wavelength laser light, the material being oriented for type 1 phase matching of the first wavelength laser light, the first wavelength laser light being in the range of 1020-1100 nm and the second wavelength laser light being in the range of 510-550 nm.

Abstract: A bearing for a rotatable window in a laser enclosure includes a bearing shaft rotatably fitted in a bearing sleeve. The bearing shaft is in the form of a hollow cylinder and the window is held in the bearing sleeve. The bearing shaft and the bearing sleeve each include a circumferential generally V-shaped groove. The grooves are aligned with other and a coil spring in the form of a continuous loop is located in the grooves. Coils of the coil spring make point contact with sloping surfaces of the grooves and are under radial compression. This provides an axial and radial preload for the bearing. The radial and axial preload retain the bearing shaft in the bearing sleeve while maintaining alignment of the window as the bearing shaft is rotated.

Abstract: The mode and wavelength of a conventional, multi-mode, wide-stripe laser diode is converted in an Nd3+ ion-doped laser host crystal to a stable, single-mode output that falls within the spectral region required for pumping EDFA amplifying structures. The host crystal absorbs radiation from the diode that corresponds with the 4I9/2→4F5/2 absorption band of its Nd3+ ions, and re-radiates into the 4F3/2→4I9/2, 4F3/2→4I11/2, and 4F3/2→4I13/2 transitions which release photon energy that can be utilized by amplifying structures doped with Er3+ and/or Yb3+. The spatial mode of the multimode laser diode is converted to single-mode by enclosing the Nd3+-doped host laser crystal within a laser cavity that has a fundamental mode size large enough to encircle the spatial extent of the beam emanating from the laser diode.

Abstract: The invention provides a laser and a method for the production thereof by which it is possible to fabricate a device on a Si substrate, and to fabricate further an optical device such as an optical memory on the Si substrate. The laser has an Er-doped nano-ultrafine crystalline Si waveguide formed on the Si substrate wherein the Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen to result in a structure in which Er ion is surrounded by at least one or more oxygen atom(s).

Abstract: A solid laser produces a laser beam of a 1 &mgr;m wavelength band with an Nd-doped solid laser medium. An oscillation mode is brought to a single longitudinal mode with a Fabry-Pérot etalon located within a resonator. An etalon thickness, an etalon reflectivity, an etalon inclination, and a resonator longitudinal mode interval satisfy the relationships, 1.2%≦RN≦15% and 0.5°≦&thgr;≦2.0°, in which RN represents an effective reflectivity of the etalon with respect to wavelengths &lgr;=&lgr;0±&Dgr;&lgr;c deviating by a resonator longitudinal mode interval &Dgr;&lgr;c from a resonance wavelength &lgr;0 of the etalon, and &thgr; represents an inclination of an etalon optical axis with respect to a resonator optical axis.

Abstract: An optical amplifier includes an organic luminescent free radical compound, preferably a salt of a radical cation or a salt of a radical anion, wherein an excited state of the luminescent free radical compound undergoes stimulated emission in an infrared wavelength region, such as 1500 to 1650 nm. Suitable organic luminescent free radical compounds include aminium infrared-absorbing dyes.

Abstract: A substrate (1) for a solid-state laser based on organic and/or inorganic laser material, and a solid-state laser are described, in which the substrate (1) consists of thermoplastic or thermoset and is structured on at least one surface (8), the structured surface (8) of the substrate (1) having a periodic surface profile (9).

Abstract: An organic semiconductor laser device is composed of a positive electrode layer, an electron hole-transporting layer, a light-emitting layer containing an organic dye and having an open end, an electron-transporting layer, and a negative electrode layer in order. The electron hole-transporting layer and the electron-transporting layer satisfy the conditions of 1<n1/n2 and 1<n1/n3 (n1 is a refractive index of the light-emitting layer determined at a wavelength of the light emitted in the light-emitting layer, n2 is that of the electron hole-transporting layer, and n3 is that of the electron-transporting layer) and further satisfy the conditions; 1 0.16 < n 2 × d 2 × ( n 1 n 2 ) 2 - 1 λ 0.

Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.

Abstract: A multimode source, such as a high-power laser diode bar, to pump an Nd3+ doped region defined in a cavity of a monolithic crystal structure. The axial length L1 of the doped region is chosen to optimize energy absorption from the multimode source while minimizing resonant re-absorption loss to unpumped Nd3+ ions. The next proximal cavity length L2 is an undoped region whose length is chosen to optimize the lowest order or fundamental spatial mode (“mode 9”) of the cavity. Advantageously, multi-parameter numerical optimization techniques may be employed in which the parameter set (e.g., doped length, L1, doping concentration, pump beam spot size, micro laser cavity length, and output coupler reflectivity) is varied to determine the overall optimal length L1opt.

Abstract: A device for producing laser radiation, the device comprising: an elongate sample of a quasi-three-level laser material; a source of pumping radiation; and a concentrator configured such that at least some of the pumping radiation emitted by the source of pumping radiation is concentrated by the concentrator and subsequently enters the sample through a side surface thereof.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: Disclosed is a surface emitting laser device with a monolithically integrated monitor photodetector, which is combined with an automatic power control circuit, thereby being capable of more accurately controlling the surface emitting laser output power. A method is also disclosed, which is adapted to fabricate the surface emitting laser device. In accordance with, the present invention, the surface emitting laser device includes insulating layers each sandwiched between an intrinsic semiconductor layer and a doped semiconductor layer in a monitor photodetector adapted to partially absorb light emitted from a surface emitting laser, thereby outputting a detect signal for the light. The insulating layers serve to remove photocurrent resulting from spontaneous emission light emitted from the surface emitting laser. By this configuration, it is possible to accurately control the power of light emitted from the surface emitting laser through a laser window.

Abstract: A system employing a solid state light source for writing Bragg gratings in fibers and for other photolithographic applications. The solid state light source preferably has a passively Q-switched laser, a fiber amplifier and two or more nonlinear conversion elements for delivering a pulsed exposure beam at an exposure wavelength in the UV wavelength range. The exposure beam is generated in a single pass through the nonlinear elements, for example by cascaded second harmonic generation yielding the fourth harmonic. The system is effective at covering the UV wavelengths from 200 nm to 330 nm and particularly effective at producing an exposure wavelength between 240 and 250 nm at average power levels of 500 milliWatts and more within a photosensitive range of fiber cores in which Bragg gratings are to be written.

Abstract: A hand-held laser device includes a casing formed with a substantially hollow interior space and having a laser emitter thereinside. The laser emitter is formed with an exciting lamp and a laser rod. A source generating a stream of gaseous coolant is provided within the interior space. A fluid cooling arrangement at least partially surrounding the laser rod is disposed within the stream of gaseous coolant for heat removal therefrom.

Abstract: A high power, diode pumped laser has a Nd:YVO4 gain media. Scaling to higher powers is achieved with the use of a low doped gain media, increasing the length of the gain media as well as increasing the pump volume. Passive cooling is extended to output powers of 10 W or greater.

Abstract: An energy converter reacts hydrocarbons and air on a catalyst configuration to produce a population inversion. A photovoltaic system may extract the radiating energy, and a laser system may extract a significant fraction of the reaction energy in the form of coherent radiation. The flooding of the catalyst adsorption sites with fuel and the choice of catalyst predisposes the adsorbing oxygen molecules to create mono-atomic oxygen hot-atoms, which deposit the considerable energy of oxygen adsorption directly into a reaction channel of adjacent, adsorbed and simple fuel radicals, thereby producing simple, energetic product molecules, concentrating the energy in one or a few modes, and strongly favoring inverted populations. A solid state method to stimulate precursor chemisorbed specie dissociation accelerates the reaction rates, providing a method to greatly intensify pulsed power output, increase efficiency, and to facilitate nano-scale and micro-scale thermal energy heat rejection processes.

Abstract: An organic micro-cavity lasers which can reduce an optical loss and derive the lasing by the electrical pumping is disclosed. The laser of the present invention has a bottom mirror layer formed on a substrate, a bottom electrode formed on the bottom mirror layer, an active layer formed on the bottom electrode, a top electrode formed on a peripheral portion of the active layer and a top mirror layer formed on the active layer except the peripheral portion. Therefore, the laser of the present invention can greatly reduce the optical loss since it has the bottom mirror layer, the active layer and the top mirror layer. Also, the injection of current can sufficiently accomplished because the top electrode having a ring shape is formed at the peripheral portion of the active layer so as to inject the current to the active layer.

Abstract: The present invention uses a novel crystal host to minimize parasitic upconversion and lifetime quenching processes by increasing the distance between active dopant ions in the matrix. As a result, erbium that could previously only be useful at low levels may now be incorporated at much higher concentrations without adverse effects. In addition, this host has long excited-state-lifetimes, making it more effective as an energy storage device for pulsed laser applications.