Abstract: Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs-GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Abstract: A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.

Abstract: Laser dazzler devices and methods of using laser dazzler devices are disclosed. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a laser dazzling device includes a plurality of green laser diodes.

Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

Abstract: In an embodiment, an integrated optical chip comprises: a substrate; a plurality of planar lightwave circuit-based optical components that are formed on one surface of the substrate; and a plurality of optical waveguides that are formed on the one surface of the substrate and that connect the plurality of optical components to one another. In the embodiment, the plurality of optical components includes a saturable absorber having nonlinear loss characteristics. The saturable absorber may comprise: a core layer that is formed on the one surface of the substrate; an overcladding layer that wraps around at least a part of the core layer; and a saturable absorption layer that is formed on at least a part of the overcladding layer and that is arranged so as to interact with an evanescent field of light guided through at least a part of the core layer.

Abstract: A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.

Abstract: A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.

Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in an integrated circuit comprising an optoelectronic transceiver, a multi-wavelength grating coupler, and first and second optical sources coupled to the integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical sources, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.

Abstract: Frequency standards based on mode-locked fiber lasers, fiber amplifiers and fiber-based ultra-broad bandwidth light sources, and applications of the same.

Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

Abstract: An optical communications module is provided that has WDM capabilities for increased bandwidth and that is suitable for use with single mode optical fiber or multimode optical fiber. The module can be configured to have both WDM and BiDi functionality to further increase bandwidth and can have a single- or multi-channel configuration. The module has an integrally-formed body having an optical port and portions of an optical coupling system that are integrally formed in the body. The optical port is adapted to mate with an end of an optical fiber cable that holds one or more ends of one or more optical fibers, depending on whether the module is a single-channel or multi-channel module. The optical coupling system couples light between an end or ends of one or more optical fibers and one or more optoelectronic devices in a way that reduces back reflection and mode partition noise.

Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.

Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

Abstract: A spot-size converter includes a substrate, a first core provided over the substrate, and second and third cores provided over the substrate and over or under the first core with a cladding layer sandwiched therebetween and extending in parallel to the substrate and the first core.

Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.

Abstract: A method for manufacturing an etalon is disclosed. The method comprises arranging a plurality of first spacers between a flat surface of a first optical plate and a concave surface of a second optical plate. For each of the spacers, the flat surface bears on a first abutment surface of the spacer and the concave surface bears on a second abutment surface of the spacer. The concave surface is deformed to be parallel to the second abutment surfaces. For each of the spacers, the flat surface is bonded to the first abutment surface and the concave surface is bonded to the second abutment surface.

Abstract: A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.

Abstract: Methods and systems for partial integration of wavelength division multiplexing and bi-directional solutions are disclosed and may include, an optical transceiver on a silicon photonics integrated circuit coupled to a planar lightwave circuit (PLC). The silicon photonics integrated circuit may include a first modulator and first light source that operates at a first wavelength and a second modulator and second light source that operates at a second wavelength. The transceiver and PLC are operable to modulate a first continuous wave (CW) optical signal from the first light source utilizing the first modulator driven by a first electrical signal and modulate a second CW optical signal from the second light source utilizing the second modulator driven by a second electrical signal. The modulated signals may be communicated from the modulators to the PLC utilizing a first pair of grating couplers in the IC and combined in the PLC.

Abstract: Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer; an active region on the N-type semiconductor layer, the N-type semiconductor layer located on a first side of the active layer; a P-type semiconductor layer located on a second, opposite side of the active layer; and one or more oxide current apertures including a first oxide current apertures in close proximity to the active region, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region.

Abstract: A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating. Phase shifters are individually provided at a central portion of the current-injection diffraction grating and at boundaries between the current-injection diffraction grating and the current-non-injection diffraction gratings. The upper electrode is provided above the current-injection diffraction grating and is not provided above the current-non-injection diffraction gratings.

Abstract: An optical transmission and reception connector system includes a cable that has a plug section formed at both ends thereof so as to relay and transmit light and an interfacing module that is mounted on an electronic apparatus and that includes an insertion space into which the plug section is detachably inserted. The cable is provided with a first relay optical path and a second relay optical path.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in a photonically-enabled integrated circuit comprising an optoelectronic transceiver, a multi-wavelength grating coupler, and first and second optical source assemblies coupled to the photonically-enabled integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical source assemblies, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.

Abstract: A vibration detection apparatus includes a ring laser resonator, a fiber Bragg grating and a detection system. The ring laser resonator generates a laser beam propagating a ring shaped optical path. The fiber Bragg grating is disposed in the ring laser resonator such that the laser beam enters the grating, and has a transmittance distribution characteristic of transmitted light in a wavelength direction, which changes in accordance with vibration of an object. The detection system detects the vibration based on the transmitted light through the fiber Bragg grating.

Abstract: A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.

Abstract: Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.

Abstract: Optical waveguides can extend alongside one another in sufficient proximity such that light couples between or among them as crosstalk. The electromagnetic field associated with light flowing in one optical waveguide can extend to an adjacent optical waveguide and induce unwanted light flow. The optical waveguide receiving the crosstalk can comprise a phase shifting capability, such as a longitudinal variation in refractive index, situated between two waveguide lengths. Crosstalk coupled onto the first waveguide length can flow through the refractive index variation, be phase shifted, and then flow onto the second waveguide length. The phase shifted crosstalk flowing on the second waveguide can meet other crosstalk that has coupled directly onto the second waveguide segment. The phase difference between the two crosstalks can suppress crosstalk via destructive interference.

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.

Abstract: Methods and systems for label-free multiple analyte sensing, biosensing and diagnostic assay chips consisting of an array of photonic crystal microcavities along a single photonic crystal waveguide are disclosed. The invention comprises an on-chip integrated microarray device that enables detection and identification of multiple species to be performed simultaneously using optical techniques leading to a high throughput device for chemical sensing, biosensing and medical diagnostics. Other embodiments are described and claimed.

Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Abstract: An optical AND gate is provided that includes an optical thyristor configured to receive first and second digital optical signal inputs. The optical AND gate further includes control circuitry operably coupled to terminals of said optical thyristor. The control circuitry is configured to control switching operation of said optical thyristor in response to the ON/OFF states of the first and second digital optical signal inputs such that the optical thyristor produces a digital output signal that represents the AND function of the first and second digital optical signal inputs. In another aspect, an AND gate is provided that includes a thyristor and control circuitry operably coupled to terminals of the thyristor.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: ?a/nwav-a<Dint<?a where Dint is a center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship: 0.8Dint(min)<?a/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: Described herein are methods, systems, and apparatuses to utilize an electro-optic modulator including one or more heating elements. The modulator can utilize one or more heating elements to control an absorption or phase shift of the modulated optical signal. At least the active region of the modulator and the one or more heating elements of the modulator are included in a thermal isolation region comprising a low thermal conductivity to thermally isolate the active region and the one or more heating elements from a substrate of the PIC.

Abstract: Apparatus comprising at least one optical device (106) optically coupled to at least one waveguide (111) on an optical chip (100), characterized in that: (i) the optical device (106) is optically aligned with the waveguide (111) by aligning means (114, 116); (ii) the aligning means (114, 116) comprises at least one male member (114) and at least one female (116) member which locate together; (iii) one of the male member (114) and the female member (116) is positioned on the optical chip (100); (iv) the other one of the male member (114) and the female member (116) is positioned on a capping chip (102); and (v) the apparatus includes a mirror (108) for reflecting light from the optical device (106) to the waveguide (111).

Abstract: An apparatus comprising a wafer substrate having a planar optical layer thereon and a plurality of adjacent pairs of sacrificial optical testing parts and optical circuit parts located on the optical layer. The sacrificial testing part includes a vertical optical coupler that is oriented to redirect a test light signal between a direction substantially non-parallel to the planar optical layer and a direction that is substantially parallel to the planar optical layer. The optical circuit part includes an optical edge coupling port oriented to permit transfer of the test light signal through the optical edge coupling port and between the sacrificial testing part and the optical circuit part. The apparatus also comprises a trench located in the planar optical layer, the trench separating the sacrificial testing part from the optical circuit part for each of the plurality of adjacent pairs such that the test light signal passes across the trench between the sacrificial testing part and the optical circuit part.

Abstract: An optical detector may include an epitaxial layer having a continuous surface provided on a surface of a substrate. Two or more electrodes may be arranged at different positions in the epitaxial layer so that the electron-hole pairs generated in the epitaxial layer from incident light passing through the aperture and reaching the epitaxial layer have a varying probability of being collected by each of the electrodes as the angle of the incident light changes. The electrodes may be arranged at different depths in the epitaxial layer. The epitaxial layer may be continuous and have a continuous aperture-facing surface between each of the electrodes associated with a particular aperture to ensure that more light passing through the aperture is absorbable in the epitaxial layer and subsequently detectable by the electrodes. This may result in improved light detection capabilities.

Abstract: Optical devices (100) that contain a sensor (140) are described. More particularly, optical devices that contain a light source (120), cavity (110) and sensor (140), in which the optical device (100) may provide an optimal light output from an output surface (112) of the cavity (110) based on various characteristics of the light are described. Additionally, methods of making and using such optical devices as well as arrays of such optical devices are disclosed.

Abstract: Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10?9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.

Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 ?m.

Abstract: Light-emitting intra-cavity interferometric (ICI) optical sensors based on channel waveguide structures which include an internal light emitting material and a functionalized region. In some embodiments, the waveguides are made of a sol-gel which incorporates the light emitting material. In some embodiments, the waveguide structure includes an ICI resonator backbone and the ICI sensor is a laser sensor. In some embodiments, the resonator backbone has an interferometric Y-branch shape. In some embodiments, the resonator backbone has a Mach Zehnder interferometer shape. In some embodiments, an ICI laser sensor has an interferometric arrayed waveguide grating shape. In some embodiments, an ICI sensor may be remotely optically pumped and remotely read.

Abstract: A laser device includes an optical semiconductor device formed of a compound semiconductor material; and a wavelength-selective reflection device including optical waveguides. Further, the optical semiconductor device includes first and second gain waveguides, a DBR waveguide formed between the first and the second gain waveguides, first and second electrodes to inject current in the first and the second gain waveguides, and an antireflection film formed on a device facet to which the second gain waveguide is connected. The optical waveguides in the wavelength-selective reflection device reflect light having a predetermined wavelength from incident light in the optical waveguides. The first gain waveguide is optically coupled with the wavelength-selective reflection device, so that a laser resonator is formed by the DBR waveguide and the wavelength-selective reflection device, and the first gain waveguide functions as a gain medium.

Abstract: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.

Abstract: A method for producing a semiconductor optical device includes the steps of forming first and second optical waveguides; forming a first resin layer on the first and the second optical waveguides; forming an opening in the first resin layer; forming a first electrode in the opening; forming a second resin layer on the first electrode and the first resin layer; forming a groove in the second resin layer on the first electrode; forming a second electrode on the second resin layer, a side surface of the groove, and the top surface of the first electrode; and forming a third electrode on the second electrode. The second and third electrodes have a region in which the second and third electrodes pass over the second optical waveguide, and, in the region, the first and second resin layers are disposed between the second electrode and the second optical waveguide.

Abstract: A method for manufacturing a semiconductor modulator includes the steps of preparing a substrate having a main surface including first and second areas; forming a stacked semiconductor layer on the main surface; forming an optical waveguide mesa by etching the stacked semiconductor layer using a mask, the optical waveguide mesa including an optical modulation portion; applying a resin on a top surface and a side surface of the optical waveguide mesa and on the substrate; forming a first opening in the resin on the second area of the substrate; forming an underlayer structure on the second area of the substrate in contact with the substrate; and forming a pad electrode on the underlayer structure in contact with the underlayer structure through the first opening of the resin. The underlayer structure includes an insulating layer made of a dielectric material.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Abstract: A method of manufacturing a semiconductor device may include sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench.

Abstract: Frequency standards based on mode-locked fiber lasers, fiber amplifiers and fiber-based ultra-broad bandwidth light sources, and applications of the same.