Abstract: A material having a titanium dioxide crystalline orientation film oriented in a specific direction on a surface of a substrate is produced by spraying a vaporized titanium alkoxide onto the surface of the substrate heated under atmospheric pressure along with an inert gas as a carrier. The material having the titanium dioxide crystalline orientation film is excellent in properties such as an antimicrobial activity, a stain resistance, an ultra-hydrophilic property and the like, and is widely used as kitchen appliances such as cooking utensils, tableware and a refrigerator, tools for medical care, materials for a toilet or a toilet room, a filter of an air-conditioner, electronic parts, building materials and road-associated materials.

Abstract: A system and method for conserving and/or recycling hydrogen used in processing operations. The present invention can be used with any conventional reactor, which supports semiconductor processes using hydrogen. Hydrogen is pumped into the reactor from a hydrogen gas supply chamber. The hydrogen is used in the reactor as needed to perform the process function. The hydrogen accompanied with other process gases is exhausted from the reactor. The exhausted gases are routed through a scrubber, which is used to separate the hydrogen from the other gases. The other gases are allowed to vent from the system in a typical manner. The hydrogen is then pumped through an H2 purifier, which cleans the hydrogen gas making the gas once again useable in the semiconductor process.

Abstract: Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

Abstract: A process for producing antiadhesive layers on a web-form material, characterized in that the antiadhesive layers are applied to the web-form material by means of low pressure plasma polymerization by guiding the web-form material continuously through a plasma zone containing a low pressure plasma.

Abstract: A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding the reactants employed in a thin-film growth process in the form of vapor-phase pulses into said reaction chamber; at least one outlet channel communicating with said reaction chamber, said outlet channel being suited for the outflow of reaction products and excess amounts of reactants from said reaction space; and a pre-reaction chamber arranged immediately upstream of the reaction chamber, said pre-reaction chamber forming a first reaction zone, in which the reactants of successive vapor-phase pulses can be reacted with each other in the vapor phase to form a solid product, whereas said reaction chamber forming a second reaction zone can be operated under conditions conducive to ALD growth of a thin film.

Abstract: There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.

Abstract: Process for selected adjustment of dropwise condensation on a surface comprising implanting nitrogen ions with a theoretically predicted minimum dose concentration of 1015 cm−2, the wetting characteristics of the surface being adjusted without cleaning or other preparation steps in such a way that stable dropwise condensation is formed on the surface and the intensity of condensation and thus heat transfer performance can be selected using the level of the dose concentration.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and a second layer of the platinum-rhodium alloy deposited in the presence of an oxidizing gas, such as ozone (O3), provides an electrical conductor that is also a relatively good barrier to oxygen. The platinum-rhodium film stack can be used as an electrode or capacitor plate for a capacitor with a high-k dielectric material. The electrode formed with alternating reducing and oxidizing agents produces a rough surface texture, which enhances the memory cell capacitance.

Abstract: The present invention is a method of depositing a lubricating layer on an imaging element. The method includes providing a polymer or a wax selected from the group consisting of polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), fluorinated ethylene copolymers, polyethylenes, high density polyethylene, natural waxes such as Carnauba wax, synthetic waxes, and silicone waxes in a deposition chamber. The chamber is evacuated to a pressure of 10−1 Torr or less. A carrier gas, preferably selected from N2, O2, Ar, is bled into the chamber while maintaining the pressure in the chamber to 100 mTorr or less. The polymer or wax is heated to a temperature sufficient to vaporize the polymer or wax, and the imaging element is continuously moved through the chamber depositing the polymer or wax on the imaging element to form the lubricating layer.

Abstract: A process of treating natural rubber latex articles, and the article produced by the process, such as medical gloves, to render them safe for contact with persons sensitive to antigenic latex protein normally present in the articles. The article is manufactured in accordance with conventional methods and then exposed to an oxidizing agent, such as a halogen gas, and specifically fluorine, to eliminate or reduce to negligible levels the antigenic latex protein in the article. In a preferred embodiment, a quantity of the articles are placed in a fluorination chamber where they are contacted with a gaseous mixture containing a small proportion of fluorine gas.. The mixture introduced into the chamber is at ambient temperature and pressure, i.e., approximately 72° F. and 14.7 psi, and the contact time between the article and the gaseous mixture is very short, on the order of only about three minutes.

Abstract: A surface treating process according to the present invention, a vapor deposited film is formed from an easily oxidizable vapor-depositing material on the surface of a work by evaporating the vapor-depositing material in a state in which the vapor deposition controlling gas has been supplied to at least zones near a melting/evaporating source and the work within a treating chamber. Thus, the vapor deposited film can be formed stably on the surface of a desired work without requirement of a long time for providing a high degree of vacuum and without use of a special apparatus. In addition, the use of the surface treating process ensures that a corrosion resistance can be provided to a rare earth metal-based permanent magnet extremely liable to be oxidized, without degradation of a high magnetic characteristic of the magnet.

Abstract: A process is provided for producing coated synthetic bodies during which, before the coating, the surface to be coated is subjected to a pretreatment in an excited gas atmosphere. The surface is then coated. The gas atmosphere is predominantly formed of a noble gas and nitrogen and/or hydrogen, and the ionic energy in the gas atmosphere and in the are of the surface to be coated is not more than 50 eV. The ionic energy is selected to be not more than 20 eV, preferable not more than 10 eV. The gas atmosphere is excited by means of a plasma discharge or by means of UV radiation.

Abstract: The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Abstract: A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10−7 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.

Abstract: A method of applying a thin film to a body comprising exposing the body to pulsed-gas cold-plasma polymerization of an unsaturated-carboxylic acid monomer thereby forming a polymer film on a surface of the body.

Abstract: A method for lubricating a thin film magnetic media is disclosed wherein the magnetic media is lubricated only at the head-disc interface zone. The method comprises the steps of vaporizing the lubricant, mixing the lubricant with a carrier gas stream, and depositing a film of the lubricant on at the loading zone on the surface of the magnetic media. The lubricant film can be selectively deposited on the surface of the magnetic disc at any location and at any thickness. In one embodiment of the invention, the lubricant film forms a radial band on the surface of the magnetic disc located near the outside diameter of the magnetic disc.

Abstract: The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic material comprising at least one component from at least one source, wherein the vaporized organic material is capable of condensing in a vacuum of less than about 130 Pa; providing a plasma from at least one source other than the source of the vaporized organic material; directing the vaporized organic material and the plasma toward the substrate; and causing the vaporized organic material to condense and polymerize on the substrate in the presence of the plasma to form an organic coating.

Abstract: Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Abstract: The present invention provides methods and apparatus for vaporizing and transporting precursor molecules to a process chamber for deposition of thin films on a substrate. The methods and apparatus include CVD solvents that comprise ionic liquids. The ionic liquids comprise salt compounds that have substantially no measurable vapor pressure (i.e., less than about 1 Torr at about room temperature), exhibit a wide liquid temperature range (i.e., greater than about 100° C.), and have low melting points (i.e., less than about 250° C.). A desired precursor is dissolved in a selected CVD solvent comprising an ionic liquid. The solvent and precursor solution is heated to or near the precursor volatilization temperature of the precursor. A stream of carrier gas is directed over or is bubbled through the solvent and precursor solution to distill and transport precursor molecules in the vapor phase to a deposition chamber.

Abstract: In accordance with the present invention, there is provided a process for depositing diamond-like carbon (DLC) films by cathodic arc evaporation (CAE), wherein the high energy of CAE metal ions causes the cracking reaction of the hydrocarbon gases fed into the vacuum reaction chamber and then results in the deposition of DLC films having high hardness and lubrication. Due to the metallic constituents doped in the DLC films, the films also have good toughness. Moreover, prior to the feeding of hydrocarbon gases for the DLC deposition, the same metal arc source may deposits one or more interlayers of metal, metal nitride, or metal carbide on the substrate so as to further enhance the adhesion of the DLC films to be deposited.

Abstract: The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C.

Abstract: A vapor deposition method of an organic compound comprises introducing a mixture of an organic compound powder with a powder or crushed particles of at least one of a ceramic, a metal, and a metal coated with a ceramic in a receptacle; and heating the receptacle which contains the mixture, in a vacuum, so that the organic compound is sublimated or vaporized, and is deposited onto an object surface so as to form a thin organic compound layer thereon.

Abstract: The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.

Abstract: A spherical object transport apparatus of the invention brings a spiral stream into contact with a first atmosphere containing a spherical object, selectively sucks the first atmosphere outward so as to engulf in the spiral stream for diffusing the first atmosphere outward, guides the spherical object so that the spherical object passes through the center of the transport apparatus, supplies a second atmosphere to the spherical object, and sends the spherical object together with the second atmosphere to the following step.

Abstract: A dynamic blending gas delivery system and method are disclosed. A blended gaseous mixture produced in accordance with the method is used in chemical vapor deposition tools or similar process tools. One embodiment is a multi-step method for processing a plurality of fluids to form a blended gaseous mixture and supplying the blended gaseous mixture to a distribution header from which the blended gaseous mixture is delivered to at least one tool. The first step is to supply a first fluid. The second step is to heat the first fluid to a temperature where at least some portion of the first fluid is a vapor. The third step is to superheat the vapor portion of the first fluid to a temperature sufficient to avoid condensation of the blended gaseous mixture delivered to the at least one tool. The fourth step is to supply a second fluid.

Abstract: A method and apparatus for performing vapor phase deposition to form a monolayer coating on the surface of an article. A liquid coating reagent is provided in a flow passageway extending into the process chamber. A carrier gas is flowed through the flow passageway to form a gas mixture including a vaporized coating reagent. The gas mixture is directed into the process chamber to contact the article. The vaporized coating reagent is deposited onto the article to form a coating thereon.

Abstract: The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C.

Abstract: The invention is a method directed to the use of a nonvolatile precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the invention the nonvolatile precursor is dissolved in a solvent. The choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature and that can be liquified by a combination of pressure and cooling. The solution thus formed is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. In CVD the solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited as a thin film on a semiconductor wafer.

Abstract: An inductive write head includes a first pole and a second pole that form a yoke having a write gap between the first pole and second pole. The second pole is formed of a particular Co100-a-bZRaCRb compound. More specifically, the second pole is formed where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The magnetic write element also includes a conductive coil which lies between the first pole and the second pole. The inductive write head also includes a first yoke pedestal attached to the first pole, and a second yoke pedestal attached to the second pole, with the write gap formed therebetween. Further, the first yoke pedestal has a pedestal width that defines the write element trackwidth and that is smaller than the pedestal width of the second yoke pedestal.

Abstract: Generally, the method of the present invention has the steps of (a) flash evaporating a liquid monomer forming an evaporate; (b) passing the evaporate to a glow discharge electrode creating a glow discharge monomer plasma from the evaporate; and (c) cryocondensing the glow discharge monomer plasma on a fixture and crosslinking the glow discharge plasma thereon, wherein the crosslinking results from radicals created in the glow discharge plasma and achieves self curing.

Abstract: A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

Abstract: In a method and evaporation chamber for generating a continuous vapor stream containing a compound in which gallium is present in monovalent form of a vacuum coating method for vacuum coating a substrate, an evaporation substance containing gallium in bivalent or trivalent form, is arranged together with metallic gallium in the evaporation chamber, that is closed on all sides and has a vapor exit opening. The evaporation substance is evaporated, and the vapor is brought into contact with the metallic gallium, causing the bivalent or trivalent gallium to be reduced to monovalent gallium in a vapor stream which subsequently exits in the direction of the substrate via the vapor exit opening.

Abstract: The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic material comprising at least one component from at least one source, wherein the vaporized organic material is capable of condensing in a vacuum of less than about 130 Pa; providing a plasma 10 from at least one source other than the source of the vaporized organic material; directing the vaporized organic material and the plasma toward the substrate; and causing the vaporized organic material to condense and polymerize on the substrate in the presence of the plasma to form an organic coating.

Abstract: A method and apparatus for nucleation and growth of diamond by hot-filament DC plasma deposition. The apparatus uses a resistively heated filament array for dissociating hydrogen in the reactant gas. For two sided diamond growth, configurations of substrate-hot filament-grid-hot filament-substrate or substrate-hot filament-hot filament-substrate configuration are used. For the latter configuration, two independent arrays of filaments serve as both hot filament and grid, and AC or DC plasma is maintained between the filament arrays. For this and the other electrode configurations, the grid electrode is positively biased with respect to the hot filaments to maintain a plasma. The plasma potential gradient across the grid and the hot-filament draws ions from the plasma towards the filaments. To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array.

Abstract: In chemical gaseous phase deposition (CVD=Chemical Vapor Deposition), there is frequently the problem of there still being an aggressive gas in the reaction chamber from the preceding layer production process. The aggressive gas can be a remainder of a process gas used for layer production or it can be a remainder gas produced by the reaction of the process gasses. The aggressive gas can cause undesirable reactions on the surface of the semiconductor product, which damage the semiconductor product. A process for layer production on a surface includes supplying at least one protective gas to the surface before and/or during the heating of the surface to the reaction temperature.

Abstract: Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11.

Abstract: An apparatus is used to turn liquids into vapors for use in chemical vapor deposition. It uses a high-frequency ultrasonic plate to break the liquid into tiny droplets and a gas-dynamic sorting tower to reprocess larger droplets into smaller ones before quickly vaporizing them. The method can vaporize liquids with high efficiency even if they have low vapor pressures and limited thermal stability. The vapor concentration can be set to a known and reproducible value by setting the pumping rate. The apparatus can rapidly start and stop the vapor flow. The pressure drop in the carrier gas is very small. Only a very small dead volume of liquid is contained in the apparatus at any given time, so little is wasted when the system is cleaned.