Abstract: A hydrophobic and oleophobic coating, comprising an adhesion promoting layer formed from an adhesion promoting composition and a hydrophobic layer formed from a hydrophobic layer forming composition, is disclosed. The adhesion promoting composition may comprise an adhesion promoting compound having a functional linking group and at least one of a silane functional group and/or a germanium functional group. The hydrophobic layer forming composition may comprise a hydrophobic layer forming compound having a hydrophobic aliphatic group and at least one of a silane functional group and/or a germanium functional group. A method of forming the coating is also disclosed.

Abstract: A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content.

Abstract: A method of fabricating an organic film is provided. A non-reactive carrier gas is used to transport an organic vapor. The organic vapor is ejected through a nozzle block onto a cooled substrate, to form a patterned organic film. A device for carrying out the method is also provided. The device includes a source of organic vapors, a source of carrier gas and a vacuum chamber. A heated nozzle block attached to the source of organic vapors and the source of carrier gas has at least one nozzle adapted to eject carrier gas and organic vapors onto a cooled substrate disposed within the vacuum chamber.

Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

Abstract: Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts are characterized by a submicron WC—Co cemented carbide and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN.

Abstract: A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.

Abstract: A solvent composition comprising an organic solvent; dispersed nanoparticles; and a non-volatile electrolyte.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus comprising: a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume above the fill level; said sidewall member having a protuberance that extends into the internal vessel compartment adjacent to the top wall member; said top wall member and said sidewall member having opposing flat surfaces, wherein the opposing flat surfaces are optionally in contact with one another; fastening means for securing said top wall member to said sidewall member through the opposing flat surfaces that are optionally in contact with one another; said top wall member and said protuberance having opposing flat surfaces, wherein the opposing flat surfaces are not in contact with one another and at least a portion of the opposing flat surfaces are hardened; and a metal seal

Abstract: A method for producing optical functional coatings comprising niobium, tantalum, titanium or aluminum by supplying a precursor gas of low vapor pressure in a CVD coating system. A precursor selected from the group consisting of Nb, Ta, Ti, and Al compounds having a vapor pressure is maintained within a first supply container at a first temperature T1 and a first pressure p1. Precursor vapor of the precursor is supplied from the first supply container to an intermediate storage device through a first gas line which fluidly communicates the first supply container and the intermediate storage device. A carrier gas or reaction gas is supplied to the first gas line such that a mixture of the precursor with the carrier gas or the reaction gas is provided.

Abstract: A vaporizer has gas passage formed inside of main body of a dispersion part, a gas inlet opening to introduce pressurized carrier gas into gas passage, a part to supply raw materials solution to carrier gas passing gas passage, a gas outlet to send carrier gas including dispersed raw material solution to vaporization part, a dispersion part to flow through gas passage having a part to cool, a vaporization pipe connected with a reaction part and gas outlet of dispersion part of the device, and a heater to heat vaporization pipe is provided, a vaporization part to heat and vaporizes the carrier gas where raw materials solution is dispersed is provided, and a radiation prevention portion having small hole for the outside of gas outlet is provided.

Abstract: This invention relates to a liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of top wall member and a protuberance[ [;] ]on a side wall member, wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal. The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a cavity centrally located on the a bottom wall member [ [,]] . The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: A method of noble metal layer formation for high aspect ratio interconnect features is described. The noble metal layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a noble metal-containing precursor and a reducing gas on a substrate structure. The adsorbed noble metal-containing precursor reacts with the adsorbed reducing gas to form the noble metal layer on the substrate. Suitable noble metals may include, for example, palladium (Pd), platinum (Pt) cobalt (Co), nickel (Ni) and rhodium (Rh).

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014-1017 cm?3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si—C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.

Abstract: A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

Abstract: A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

Abstract: A method and system is provided for determining and controlling the amount of film precursor vapor delivered to a substrate in a vapor deposition system, while maintaining a desired concentration of film precursor vapor within a carrier gas utilized to transport the film precursor vapor. The vapor deposition system comprises a vapor delivery system comprising a carrier gas supply system configured to supply a first flow of carrier gas that passes through a precursor evaporation system to entrain film precursor vapor and to supply a second flow of carrier gas that by-passes the precursor evaporation system. The vapor delivery system comprises a carrier gas flow control system to control the amount of the first flow of the carrier gas and control the amount of the second flow of the carrier gas. Additionally, the vapor delivery system comprises a film precursor vapor flow measurement system configured to measure an amount of the film precursor vapor introduced to the first flow of the carrier gas.

Abstract: A process for depositing a substantially pure, conformal metal layer on one or more substrates through the decomposition of a metal-containing precursor. During this deposition process, the substrate(s) is maintained at a temperature greater than the decomposition temperature of the precursor while the surrounding atmosphere is maintained at a temperature lower than the decomposition temperature of the precursor. The precursor is dispersed within a transport medium, e.g., a vapor phase. The concentration of the metal-containing precursor(s) in the vapor phase, which also contains liquid therein, can be at a level to provide conditions at or near saturation for the metal precursor(s). In ensuring the aforementioned temperature control between the transport media and substrate, and in maintaining saturation conditions for the transport media, the quality of the deposited metal thin film is markedly improved and the production of by-product metal dust is greatly reduced or substantially eliminated.

Abstract: Provided are a device for depositing an organic/inorganic thin film and a deposition method thereof.

Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

Abstract: A method of processing a wafer in a chamber including a wafer stage and a showerhead is disclosed. The method includes forming a first protection layer on the wafer stage, heating the wafer stage to a first temperature, heating the showerhead at a second temperature lower than the first temperature, forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead, loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage, and removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.

Abstract: The present invention is in the field of methods and formulations for applying a protective coating onto a substrate, and more particularly, methods and formulations for applying a protective coating by application of a metal compound onto the hot glass surfaces using a chemical-vapor deposition (CVD) technique.

Abstract: The invention relates to a coating and apparatus and method for applying the same, said coating including Diamond Like Carbon (DLC) applied by chemical vapor deposition using a pulsed DC biased power supply, typically having an initial metal layer and followed by a transitional metal carbide layer and a DLC layer. The depths and transitions between the materials can be selected to suit requirements. The apparatus also includes the use of an arrangement with at least one electrode with an RF power supply and the selective control of the power supplies to the electrode and substrates is used to improve the efficiency of application.

Abstract: A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas to react them, thereby forming a boron nitride film 15 on a substrate 4. At the initial stage of film formation, the nitrogen gas 11 is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film 15 improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

Abstract: An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas supply means for supplying at least one burst of gas to the chamber for rapidly establishing the at least one preselected gas pressure in the chamber, the gas supply means including: (i) a source of the gas; (ii) a supply ballast fluidly connected to the gas source for receiving the gas from the source; (iii) at least one burst ballast fluidly connected to the supply ballast via a metering valve for receiving the gas from the supply ballast; and (iv) an on/off valve fluidly connected to the at least one burst ballast and the chamber for supplying the process chamber with the gas from the at least one burst ballast.

Abstract: A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures. The resulting film conforms to surface structures having varying complex dimensions.

Abstract: A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Abstract: A method of using a compacted pellet having uniform blended mixture with at least first and second different organic components that sublime at temperatures T1 and T2 respectively, wherein T1 represents the temperature of the first organic material with the lowest sublimation temperature and T2 represents the temperature of the second organic material with the highest sublimation temperature, to form an organic layer having a uniform blended mixture of the organic components, includes providing a compacted pellet, having a top and bottom surface, into a boat having an open top surface wherein the compacted pellet conforms to the interior of the boat; and applying heat to the top of the compacted pellet to cause the deposition of a uniform blended mixture of the organic components to form an organic layer.

Abstract: A method of forming a compacted pellet of organic materials adaptable for making an organic layer on a structure which will form part of an OLED display, includes providing a sublimable organic material in a powder form; providing a thermally insulating and non-sublimable inorganic material in a powder form; forming a mixture of the sublimable organic powder and thermally insulating and non-sublimable inorganic powder; placing such mixture into a die and using two punches, a lower and an upper punch, to apply sufficient pressure to the mixture to cause the mixture of powders to consolidate into a solid pellet; applying heat to the die during or prior to applying pressure by the opposing punches to aid in causing the mixture of powders to consolidate into a solid compacted pellet, and removing the pellet from the die.

Abstract: Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

Abstract: A chemical vapor deposition process for laying down a gallium oxide coating on a glass substrate through the use of an organic ester and an inorganic gallium halide. The organic ester preferably contains 3-6 carbon atoms which contributes to obtaining a high deposition rate. The chemical vapor deposition method to form the gallium oxide coating is preferably at, essentially, atmospheric pressure. The resulting article has a gallium oxide coating which can be of substantial thickness because of the high deposition rates attainable. The coating deposition rates resulting from the method of the present invention are preferably greater than or equal to 75 ? per second.

Abstract: A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the substrate is lower than the condensation temperature of the component. The liquid deposit is then cooled to produce a solid phase film. The invention can provide two or more vapor phase components. The invention can be used to deposit a wide variety of layers, including thin films of metallic, semiconductor and nonmetallic inorganic materials. The invention is useful for forming solid electrolytes and the electrodes for batteries, fuel cells and other electromagnetically active devices.

Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

Abstract: A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.

Abstract: There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas flux on the substrate is controlled by controlling the conductance between the process chamber and a lower pressure volume outside the process chamber. The flux of the gas on the substrate varies inversely with the chamber conductance, such that the flux of the gas on the substrate increases when the conductance decreases. Various methods of performing an ALD process by controlling the conductance are disclosed as well as various structures for controlling the conductance.

Abstract: A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and horizontally controllably aligned nanotubes on the template structure but not on a substrate in a single process step.

Abstract: The invention concerns a method for making an antiglare stack by vacuum evaporation on an organic substrate (1) at a temperature lower than 150° C., comprising steps which consist in depositing at least a layer of material having a refractive index different from that of MgF2 (4, 4?), preparing the surface of the thus coated substrate, and depositing an outer MgF2 layer (5) without ionic assistance. The resulting antiglare stack on organic substrate exhibits good adherence and good scratch resistance. The invention is applicable to ophthalmic lenses.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency ?2 of the second high frequency electric field is higher than frequency ?1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1?IV>V2 or V1>IV?V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; annealing the structure; selectively depositing a ferroelectric layer by MOCVD; annealing the structure; and completing the ferroelectric device.

Abstract: Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging property may be obtained through vapor deposition of an organic compound having a hydrophilic group and a reactive group along with silicon dioxide or with silicon dioxide and aluminum oxide. The antireflection film may be formed on a substrate having the hybrid film as the outermost layer opposite to the substrate. The optical product may comprise a plastic substrate and the antireflection film having the hybrid film. A method for restoring the defogging property of the hybrid film of the optical product may include washing the hybrid film.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Abstract: In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

Abstract: Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with ?-diketone ligands is used as a precursor.

Abstract: A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

Abstract: Coated milling insert has a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN. The coated milling insert is particularly useful for milling of grey cast iron with or without cast skin under wet conditions at low and moderate cutting speeds and milling of nodular cast iron and compacted graphite iron with or without cast skin under wet conditions at moderate cutting speeds.