Abstract: A multi-nozzle gas spray arm for a spin coating apparatus. In a typical embodiment, the invention comprises a primary spray arm and a secondary spray arm which is confluently connected to the primary spray arm. The primary spray arm ejects a narrow, relatively high-velocity nitrogen stream against a substrate while the secondary spray arm ejects a diffuse, relatively low-velocity nitrogen stream against the substrate as the gas spray arm is typically swept across the surface of the wafer. The diffuse nitrogen flow characteristic of the nitrogen ejected from the secondary spray arm is effective in eliminating water and chemical droplets which otherwise would tend to remain and form dry spots on the wafer surface.

Abstract: A CsBr:Eu phosphor showing a narrow emission spectrum upon UV-excitation and panels including such a phosphor are disclosed. Also methods for preparing such a phosphor have been described.

Abstract: A method for preparing carbon molecular sieve membrane is invented. A thin carbon-containing film is first deposited on a porous substrate. The thin film is then bombarded by high energy ions for surface modification. The surface modified film is then baked or calcined at a high temperature. The carbon molecular sieve membrane prepared according to the present invention can be used for gas separation as well as liquid separation, ions or solvents, etc., exhibiting improved permeance and improved selectivity simultaneously in gas separation. The ion bombardment includes generating plasma and ions in a gas phase, and applying a negative bias voltage to the substrate.

Abstract: An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

Abstract: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

Abstract: A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes.

Abstract: A process for modifying the surface of a substrate containing a polymeric material by contacting the surface with the modifying agent to bond the modifying agent to the surface the process comprising providing a solution of the modifying agent in a solvent and subjecting the solution of the modifying agent to a zone of elevated temperature to vaporize the solvent and provide diffuse contact between the modifying agent and the surface of the substrate.

Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing material on a micro-device workpiece includes a reaction chamber and a gas distributor in the reaction chamber. The gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector. The first injector projects a first gas flow along a first vector and the second injector projects a second gas flow along a second vector that intersects the first vector in an external mixing zone facing the workpiece. In another embodiment, the mixing zone is an external mixing recess on a surface of the gas distributor that faces the workpiece.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.

Abstract: A method for fabricating an electrode for a rechargeable lithium battery which includes depositing a thin film composed of active material capable of alloy formation with lithium on a current collector made of a metal incapable of alloy formation with lithium, by using a process for depositing a thin film by supplying a material from a gas phase, characterized in that the thin film of active material is deposited at such a temperature that enables formation of a mixed layer via diffusion of a constituent of the current collector into the thin film in the vicinity of an interface therebetween.

Abstract: A method of coating phosphor particles comprises introducing an inert gas into a reaction vessel and charging phosphor particles into the reaction vessel. The reaction vessel is then heated to a reaction temperature and a coating precursor is introduced while the temperature is maintained for a time sufficient to saturate the phosphor particles with the precursor. Thereafter, continuous precursor is introduced into the reaction vessel, along with an oxygen/ozone mixture. The inert gas flow, oxygen/ozone mixture flow and further precursor are supplied for a time sufficient to coat the phosphor particles.

Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

Abstract: An electron-emitting source includes a substrate and a coating film. The substrate is made of a material containing a metal serving as a growth nucleus for nanotube fibers as a main component, and has a plurality of through holes. The coating film is constituted by nanotube fibers formed on a surface of the substrate and wall surfaces of the through holes. A method of manufacturing an electron-emitting source is also disclosed.

Abstract: A method of forming a layer on a micro-device workpiece includes dispensing a first pulse of a first precursor at a first region of the workpiece to flow toward a second region of the workpiece. The second region of the workpiece is located radially outward relative to the first region of the workpiece. The embodiment of this method further includes dispensing a first pulse of a purge gas at the first region of the workpiece to flow toward the second region of the workpiece after terminating the first pulse of the first precursor. Additionally, this embodiment also includes dispensing a second pulse of a first precursor at the second region of the workpiece to flow radially outward concurrently with dispensing the first pulse of a purge gas in the first region of the workpiece. The first pulse of the purge gas is terminated at the first region of the workpiece, and the second pulse of the first precursor is terminated at the second region.

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula:

Abstract: A thin film forming method characterized by at least a first step and a second step which steps may be repeated. The first step is the step of supplying a compound containing at least one kind of metal element onto a substrate, and the second step is the step of irradiating the substrate with energy particles in order to introduce the metal element into the substrate. A semiconductor device manufacturing method of the present invention uses the thin film forming method described above in the manufacturing of a semiconductor device.

Abstract: A protective coating system and method for protecting a thermal barrier coating from CMAS infiltration. The coating system comprises inner and outer alumina layers and a platinum-group metal layer therebetween. The outer alumina layer is intended as a sacrificial layer that reacts with molten CMAS, forming a compound with a melting temperature significantly higher than CMAS. As a result, the reaction product of the outer alumina layer and CMAS resolidifies before it can infiltrate the TBC. The platinum-group metal layer is believed to serve as a barrier to infiltration of CMAS into the TBC, while the inner alumina layer appears to enhance the ability of the platinum-group metal layer to prevent CMAS infiltration.

Abstract: A method of chemically depositing a copper film in which a bromine or iodine-containing catalyst component is employed to enhance the deposition rate. The present invention is characterized in that the catalyst component floats on the film surface during the film formation. Accordingly, a film deposition having superior step coverage and high deposition rate is obtained.

Abstract: A method for forming a composite vapor-deposited film which is suitable for the deposition on the fluorescent screen of a color television picture tube and the like and in which one side has a high light-reflectance and the other side has a property of absorbing heat rays, and a composite vapor-deposition material suitable for vacuum vapor deposition therefor are disclosed. This composite vapor-deposition material has an aluminum envelope and a low vapor-pressure metal/metalloid compound powder in the its core region. It is desirable that the low vapor-pressure metal/metalloid compound powder is dispersed and retained with aluminum in the core region.

Abstract: In a method for processing a substrate, a plurality of substrates maintained in a boat are loaded into a cylindrical inner tube disposed in a cylindrical outer tube. A processing gas is supplied into a process room, and thereafter the substrates are batch-processed with the processing gas evacuated through an exhaust path formed between the inner tube and the outer tube, wherein nitrogen gas is supplied to a surface region of the ceiling of the outer tube during a film forming process of the substrates, thereby the processing gas ascended through the process room is prevented from coming into contact with the ceiling of the outer tube by the nitrogen gas covering thereat. Accordingly, products and/or by-products of the film forming gas is prevented from being adhered thereto, thereby formation of contaminants due to the deterioration of the deposition of the products and the by-products thereof can be eliminated/reduced.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.

Abstract: In a device for forming magnetic film which deposits magnetic material on a substrate 12, a device is provided which, before the magnetic film is formed in a magnetic film-forming chamber 11, cleans one or both of the film-forming face and reverse face of the substrate 12 in a cleaning processing chamber 13. The cleaning mechanism carries out cleaning by placing a substrate on a horseshoe-shaped insulator substrate-holding part 51 which moves up and down, and emission of gas from the reverse face of the substrate and the like is brought about by generating Ar plasma between the upper periphery of the substrate, the substrate and a lower insulator 61 of the substrate.

Abstract: There is described a process and apparatus for the physical vapor deposition of an anisotropic phosphor composition with an auto-collimating, optical waveguide structure.

Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.

Abstract: An apparatus and method for the deposition of thin film material layers provides improved use of processing chamber space for enhanced processing capability in the fabrication of microelectronic devices. In one embodiment, a physical-vapor deposition target offset from the processing chamber central axis, such as a target having an annular shape and central opening, deposits a material on a substrate while leaving the central region of the processing chamber available for other deposition techniques, including a centrally located sputtering target, CVD showerhead, or ion source. Alternatively, a collimator divides a processing chamber into sub-chambers and allows energetic species from a PVD target or ion source to pass to a substrate located in a separate sub-chamber for interaction with a CVD precursor without mixing the precursor and the plasma associated with the PVD or ion processes.

Abstract: Method for chemical vapor deposition of a film onto a substrate. Before bulk chemical vapor deposition the substrate is subjected to a nucleation treatment. The nucleation treatment comprises atomic layer deposition wherein the substrate is alternatingly and sequentially exposed to pulses of at least two mutually reactive gaseous reactants wherein the nucleation temperature is chosen to prevent condensation of either of the used reactants and to prevent substantial thermal decomposition of each of the reactants individually.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: A method for depositing a functionally gradient thin film of the present invention includes the steps of: introducing two or more types of material gases into a process chamber which includes a cylindrical rotary electrode provided so as to be opposed to a substrate on which a thin film is deposited, the cylindrical rotary electrode being rotated by applying a high-frequency power thereto; and sliding the substrate into the process chamber while maintaining the rotation of the cylindrical rotary electrode so as to create plasma between the cylindrical rotary electrode arid the substrate for depositing the thin film.

Abstract: A method of producing a layer of lithiated material is provided wherein a mixture of Li (TMHD) and Co (acac)3 is dissolved in an organic solvent comprising diglyme, toluene and HTMHD to produce a solution. The solution is deposited upon a substrate by atomizing the solution, passing the atomized solution through a heating zone so as to vaporize the solution, and directing the vaporized solution onto a substrate.

Abstract: A fabrication process provides for achieving high adhesion of CVD copper thin films on metal nitride substrates, and in particular, on substrates having an outermost TaN layer. The method comprises introducing a certain amount of water vapor to the initial copper thin film deposition stage and reducing the amount of fluorine in the interface of the copper and metal nitride substrate. These two process steps result in a copper thin film having improved adhesion to metal nitride substrates, including TaN substrates.

Abstract: Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.

Abstract: An improved exhaust conductance system for a CVD reactor includes two exhaust paths and a three-way valve controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path when reactant gas passes through the reactor, and through a second exhaust conductance path after reactant gas has been purged from the chamber and only purging gas is flowing through the reactor.

Abstract: A method of forming diamond crystals and diamond films from a dissociated precursor solution of methanol and at least one carbon containing compound having a carbon to oxygen ration of greater than one is disclosed. The A hot filament is applied to dissociate the vaporized precursor of the premixed solution and generate oxidizing and etching radicals such as OH. O, H as well as carbon depositing radicals such as CH3. Graphitic and amorphous carbon deposition is suppressed or preferentially etched resulting in the net deposition of good quality diamond crystals and diamond films.

Abstract: Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Abstract: A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Abstract: An atomic layer deposition (ALD) method employing Si2Cl6 and NH3, or Si2Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate into a chamber, (b) injecting a first reactant containing Si2Cl6 into the chamber, (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate, d) removing the non-chemically absorbed portion of the first reactant from the chamber, (e) injecting a second reactant including NH3 into the chamber, (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate, and (g) removing the unreacted portion of the second reactant from the chamber. In other embodiments, the first reactant can contain two or more compounds containing Si and Cl, such as Si2Cl6 and SiCl4.

Abstract: Substrate processing apparatus and method, by which an outside air and a gas-phase backward flow are restrained from entering the inside of a reaction chamber during the inside of a reaction chamber is opened to the outside through a substrate carrying-in/carrying-out opening. This substrate processing apparatus, for example, a vertical CVD apparatus (200) has a gas supply system (240) and a bypass line (264). The gas supply system (240) supplies an inert gas to a space (3a) between an outer tube (1A) and an inner tube (2A) of a reaction furnace (211) in a boat loading term and a boat unloading term. The bypass line (264) exhausts an atmosphere from a reaction chamber (1a) by performing a slow exhaust operation in the boat loading term and the boat unloading term.

Abstract: A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

Abstract: The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces “flash” sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system.

Abstract: A method of on-line coating a coat film on the inner wall of a reaction tube in a hydrocarbon pyrolysis reactor for preventing the formation and the deposit of coke on the inner walls. This method comprises the steps of vapor depositing a mixed solution of a metal alkoxide and a chromic compound on the inner walls concurrently with introducing a carrier at a flow rate of 1-5000 kg/hr/coil at a temperature of 600-900° C. under a pressure of 0-3 kg/cm2 to form a buffer layer on the inner walls; and vapor depositing a metal alkoxide as a barrier on the buffer layer; and vapor depositing an alkali metal/alkaline earth metal compound alone or mixed with metal alkoxide as a decoking layer on the barrier. A decoking layer may further be provided on the diffusion barrier.

Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

Abstract: A method of producing a layer of lithiated material is provided wherein a mixture of Li(acac) and Co (acac)3 is dissolved in an aqueous solvent to produce a solution. The solution is deposited upon a substrate by atomizing the solution, passing the atomized solution into a heated gas stream so as to vaporize the solution, and directing the vaporized solution onto a substrate.

Abstract: A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RF) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.

Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.

Abstract: Nanocomposite thin films with low dielectric constants are made by the simultaneous deposition of an oxide dielectric and an organic polymer at near room temperatures. Suitable oxides include SiO2, and suitable organic polymers include poly(chloro-para-xylylene). The two dielectric materials, when deposited, form nanocomposites characterized by nanometer-sized domains of dielectric material. The nanocomposite thin films of this invention are useful as dielectric layers for interlevel dielectric (ILD) and intermetal dielectric (IMD) dielectrics in the manufacture of semiconductor devices as well as for thin films for flat panel displays, food wraps, hybrid ceramics, glass, hard disk drives, and optical disk drives. Additionally, the invention comprises semiconductor devices and semiconductor chips made incorporating nanocomposites deposited by chemical vapor deposition.

Abstract: A method and apparatus for depositing a metal and/or metal nitride layer on a substrate by the thermal or plasma enhanced disassociation of an organometallic precursor having the formula of (Cp(R)n)xM(CO)y−x, in the presence of a processing gas, such as argon, hydrogen, or ammonia. In one embodiment the metal or metal nitride film is deposited at a pressure of less than about 20 Torr. The deposited metal or metal nitride layer may then be exposed to a plasma to remove contaminants, densify the layer, and reduce layer resistivity. The layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.