Abstract: A method includes reading data from a subset of a plurality of memory bit cells of a non-volatile memory. The data identifies an address of at least one individual failed bit cell. The method further includes loading the data directly into a register, receiving an address of data to be accessed, determining if the received address is the address of any individual failed bit cell; and accessing the data of the register if the received address is the address of any individual failed bit cell.

Abstract: A process and apparatus provide a JTAG TAP controller (302) to access a JTAG TAP domain (106) of a device using a reduced pin count, high speed DDR interface (202). The access is accomplished by combining the separate TDI and TMS signals from the TAP controller into a single signal and communicating the TDI and TMS signals of the single signal on the rising and falling edges of the TCK driving the DDR interface. The TAP domain may be coupled to the TAP controller in a point to point fashion or in an addressable bus fashion. The access to the TAP domain may be used for JTAG based device testing, debugging, programming, or other type of JTAG based operation.

Abstract: It is intended to reduce the amount of computation to be performed by CPU or the required amount of storage space in a built-in memory for timing adjustment of a pulse output signal. A digital multiplying circuit in the phase arithmetic circuit of the pulse generating circuit generates a multiplication output signal by multiplying a phase angle change value in the phase adjustment data register and a count maximum value Nmax in the cycle data register. A digital dividing circuit generates a division output signal by dividing the multiplication output signal by 360 degrees of phase angle for one cycle. A digital adding circuit adds the division output signal and rise setting/fall setting count values and a subtracting circuit subtracts the division output signal from these values. The addition and subtraction generate new rise setting/fall setting count values required to delay/advance the phase by the phase angle change value.

Abstract: Provided is a storage device capable of increasing its life cycle and operating method thereof. The storage device includes a nonvolatile memory device that stores data and a controller that controls the nonvolatile memory device. The controller receive can modify a write time-out value of the nonvolatile memory device in accordance with predetermined conditions, such as request from a host or exceeding of a predefined life cycle.

Abstract: An ActiveTest solution for memory is disclosed which can search for memory errors during the operation of a product containing digital memory. The ActiveTest system tests memory banks that are not being accessed by normal memory users in order to continually test the memory system in the background. When there is a conflict between the ActiveTest system and a memory user, the memory user is generally given priority.

Abstract: A testing system for a wafer having a plurality of flash memory dies is provided. The testing system includes a testing apparatus and a probe card coupled to the testing apparatus via a specific transmission line. The testing apparatus provides a testing requirement. The probe card includes a plurality of probes and a controller. The probes contact with at least one of the flash memory dies of the wafer. The controller writes a testing data to the flash memory die according to the testing requirement and reads the testing data from the flash memory die via the probes. The controller provides a testing result to the testing apparatus according to the read testing data.

Abstract: Systems and methods are disclosed for calibrating a Data Strobe (DQS) enable/disable signal and for tracking the timing of the DQS enable/disable signal with respect to changes in voltage and temperature (VT) in order to improve the timing margin of the DQS enable/disable signal in programmable devices using Double Data Rate (DDR) memory. In an exemplary embodiment, the system includes a gating circuit, a sampling circuit, and a delay chain tracking circuit. The gating circuit receives a DQS enable signal and a input DQS signal, calibrates the DQS enable signal based on an amount of delay, and outputs the calibrated DQS signal. The sampling circuit provides the amount of delay to the gating circuit based on a sampling clock. The delay chain tracking circuit maintains the timing of the calibrated DQS enable signal over a plurality of clock cycles based on the sampling clock and a leveling clock.

Abstract: Provided is an arthropod pest control composition, the composition having an superior effect on control of arthropod pests. The composition comprises 0.01 to 0.5% by weight of a neonicotinoid insecticidal compound, 10 to 50% by weight of an organic solvent selected from the group consisting of monoalcohols having 1 to 3 carbon atoms and acetone, and 49.5 to 89.99% by weight of liquefied carbon dioxide, wherein the weight of ethanol to that of the neonicotinoid insecticidal compound is 100 times or more.

Abstract: Self-repair logic for stacked memory architecture. An embodiment of a memory device includes a memory stack having one or more memory die elements, including a first memory die element, and a system element coupled with the memory stack. The first memory die element includes multiple through silicon vias (TSVs), the TSVs including data TSVs and one or more spare TSVs, and self-repair logic to repair operation of a defective TSV of the plurality of data TSVs, the repair of operation of the defective TSV including utilization of the one or more spare TSVs.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: A pattern is written to only a portion of a test track of a magnetic disk. The pattern written to the portion of the test track is read using a read head. A cross-track offset between the read head and a write head is determined at a position on a disk based on reading the pattern.

Abstract: The embodiments described herein are used to execute staggered memory operations. The method includes, at each of a plurality of distinct memory portions of the storage device, establishing a non-zero command delay parameter distinct from a command delay parameter established for one or more of the other memory portions in the plurality of distinct memory portions. The method further includes, after establishing the non-zero command delay parameter in each of the plurality of distinct memory portions of the storage device, executing memory operations in two or more of the plurality of distinct memory portions of the storage device during overlapping time periods, the executing including, in each memory portion of the plurality of memory portions, delaying execution of a respective memory operation by an amount of time corresponding to the command delay parameter established for that memory portion.

Abstract: Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems are disclosed. In one embodiment, sense amplifier is provided. The sense amplifier comprises a differential sense input coupled to bit line. The sense amplifier also comprises a differential reference input coupled to reference line. First inverter inverts first inverter input into first inverter output coupled to second inverter input of second inverter, first inverter output configured to provide state of bitcell. Second inverter inverts second inverter input into second inverter output coupled to first inverter input. Control circuit couples differential reference input to first inverter and differential sense input to second inverter in latch mode, and decouples differential reference input to first inverter and differential sense input to second inverter in sensing mode to provide sensed state of bitcell on first inverter output.

Abstract: Operating computer memory in a computer including dynamically monitoring, by a predictive failure analysis (‘PFA’) module, correctable memory errors and memory temperature and managing cooling resources in the computer in dependence upon the correctable memory errors and memory temperature.

Abstract: The present disclosure provides a method for testing a semiconductor device. The method includes providing a testing unit and an electronic circuit coupled to the testing unit and applying a first electrical signal to the testing unit. The method includes sweeping a second electrical signal across a range of values, the second electrical signal supplying power to the electronic circuit, wherein the sweeping is performed while a value of the first electrical signal remains the same. The method includes measuring a third electrical signal during the sweeping, the measured third electrical signal having a range of values that each correspond to one of the values of the second electrical signal. The method includes adopting an optimum value of the second electrical signal that yields a minimum value of the third electrical signal. The method includes testing the testing unit while the second electrical signal is set to the optimum value.

Abstract: In some embodiments of the present invention, a data storage device includes a controller and a memory. The data storage device further includes an LDPC encoder and decoder, with the decoder implementing a dynamic precision-rescaling technique for improving performance. In one embodiment, the technique works by rescaling the binary representations of the input log-likelihood ratios (LLRs) and messages upon activation of decoder-state-based triggers. Various triggering functions are introduced, e.g., checking if the number of output LLRs smaller than a certain limit crosses a threshold, checking if the weight of a syndrome crosses a threshold, etc. This technique offers an improvement in the performance of the decoder.

Abstract: According to the embodiments, a memory system includes a nonvolatile semiconductor memory and a writing-loop-count monitoring unit that monitors a loop count of an applied voltage to the nonvolatile semiconductor memory required for data writing of the nonvolatile semiconductor memory as a writing loop count. Moreover, the memory system includes a management table for managing the writing loop count in block unit that is a unit of data erasing and a life managing unit that determines a degraded state of the nonvolatile semiconductor memory based on the management table.

Abstract: The disclosure describes a novel method and apparatus for making device TAPs addressable to allow device TAPs to be accessed in a parallel arrangement without the need for having a unique TMS signal for each device TAP in the arrangement. According to the disclosure, device TAPs are addressed by inputting an address on the TDI input of devices on the falling edge of TCK. An address circuit within the device is associated with the device's TAP and responds to the address input to either enable or disable access of the device's TAP.

Abstract: Memory devices adapted to repair single unprogrammable cells during a program operation, and to repair columns containing unprogrammable cells during a subsequent erase operation. Programming of such memory devices includes determining that a single cell is unprogrammable and repairing the single cell, and repairing a column containing the single cell responsive to a subsequent erase operation.

Abstract: A double data rate memory physical interface having self checking loopback logic on-chip is disclosed. Disposed on the chip is a first linear feedback shift register, which is capable of generating a set of test data values that comprise at least two data bits. Also disposed on the chip is a second linear feedback shift register. The second linear feedback shift register is capable of generating a set of expected data values that match the test data values. Further, an internal loopback error check element is disposed on the chip. The internal loopback error check element is used to compare the set of expected data values with the set of test data values.

Abstract: An apparatus is equipped with a storage device including an error correction circuit. The apparatus performs a test of the storage device according to a predetermined testing procedure, and records a time-point at which error correction of the storage device has been performed by the error correction circuit during performance of the test. The apparatus determines, with predetermined accuracy, a first position within the storage device on which the error correction has been performed, based on a test speed at which the test is performed, a time-period from the time-point to current time, and a second position within the storage device on which the test is being performed at the current time. Then, the apparatus performs the test predetermined times on a range included in the storage device and including the first position, according to a testing procedure that has been used at the time-point.

Abstract: DIMM seating errors may be detected. An example detection method includes determining whether a training error has occurred for a number of dynamic random access memories (DRAMs) of a DIMM. The Example method includes identifying a location for each of the DRAMs. The example method includes determining whether a seating error has occurred based on the training error, the number, and the location of the DRAMs.

Abstract: A corresponding portion of storage (such as one or more storage cells) is assigned one of multiple different error correction modes depending on a respective ability of the corresponding portion of storage cells to store data without error. Groups of storage cells that are less prone to failures (i.e., loss of data) are assigned a first error correction mode in which a first length error correction code is used to generate error correction information for a given sized segment of data. Groups of storage cells that are more prone to failures are assigned a second error correction mode in which a second length error correction code is used to generate error correction information for the given sized segment of data.

Abstract: A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.

Abstract: Provided is an apparatus including a scheduler and a plurality of logic devices coupled to the scheduler, each including a defect indicator. The scheduler determines whether one or more of the logic devices is defective based upon its respective defect indicator. The scheduler intentionally omits sending workloads to the disabled logic units, and thus enables the device to be functional albeit at a lower performance or in a differently performing product.

Abstract: A method for testing memory devices under test (DUTs) using automated test equipment (ATE) is presented. The method comprises retrieving a portion of raw test data from a memory device under test (DUT). It also comprises comparing the portion of raw test data with expected test data to determine failure information, wherein the failure information comprises information regarding failing bits generated by the memory DUT. Next, the method comprises utilizing paging to transfer data comprising the failure information to a filtering module and filtering out the failure information from transferred data using the filtering module. Further, it comprises updating a fail list using the failure information, wherein the fail list comprises address information for respective failing bits within the memory DUT. Finally, it comprises repeating all the prior steps for the next block of raw test data.

Abstract: A memory test device used to test performance of at least one memory module on an electronic device, are provided. The memory test device includes at least one adapter and a control unit. The adapter includes a plugging portion, a slot, and a switch circuit. The plugging portion is used to be plugged in a memory module slot of the electronic device. The slot is connected electrically to the plugging portion, is used for the memory module to plug in, and is capable of outputting a work voltage to the memory module when the adapter is plugged in the memory module slot and connected electrically to it. The switch circuit is connected electrically to the plugging portion and the slot. The control unit is connected electrically to the switch circuit of each adapter, where the control unit enables or disables the plugged memory module by controlling the switch circuit.

Abstract: A transmitting device includes a parallel data generation unit and a transmitting unit. The parallel data generation unit generates first serial data and second serial data from a data packet, converts the first serial data and second serial data respectively into first parallel data and second parallel data, transmits the first parallel data and second parallel data respectively through first and second parallel transmission paths, and performs the transmission of the first parallel data and the transmission of the second parallel data in parallel. The transmitting unit receives the first parallel data and second parallel data respectively through the first and second parallel transmission paths, re-converts the first parallel data and second parallel data respectively into the first serial data and second serial data, and transmits the first serial data and second serial data to a receiving device respectively through first and second serial transmission paths.

Abstract: According to an embodiment described herein, a method for testing a memory includes receiving an address and a start signal at a memory, and generating a first detector pulse at a test circuit in response to the start signal. The first detector pulse has a leading edge and a trailing edge. A data transition of a bit associated with the address is detected. The bit is a functional bit. The method further includes determining whether the bit is a weak bit by determining whether the data transition occurred after the trailing edge.

Abstract: Methods and systems for detecting error in data storage entities based at least in part on importance of data stored in the data storage entities. In an embodiment, multiple verification passes may be performed on a data storage entity comprising one or more data blocks. Each data block may be associated with a probability indicating the likelihood that the data block is to be selected for verification. During each verification pass, a subset of the data blocks may be selected based at least in part on the probabilities associated with the data blocks. The probabilities may be adjusted, for example, at the end of a verification pass, based on importance factors such as usage and verification information associated with the data blocks. The probabilities may be updated to facilitate timely detection of important data blocks. Additionally, error mitigation and/or correction routines may be performed in light of detected errors.

Abstract: A memory module includes a first rank, a second rank and a test control unit. The first rank includes a plurality of semiconductor memory devices configured to operate in response to a first chip selection signal. The second rank includes a plurality of semiconductor memory devices configured to operate in response to a second chip selection signal. The test control unit is configured to simultaneously enable the first and second chip selection signals to test the first and second ranks in a test mode.

Abstract: Memory hole diameter in a three dimensional memory array may be calculated from characteristics that are observed during programming. Suitable operating parameters may be selected for operating a block based on memory hole diameters. Hot counts of blocks may be adjusted according to memory hole size so that blocks that are expected to fail earlier because of small memory holes are more lightly used than blocks with larger memory holes.

Abstract: An interface node selects a logical block address that corresponds to a contiguous memory location located on a storage device that is accessible by multiple interface nodes. The interface node retrieves a logical block address status indicator from a shared memory area and determines, based upon the logical block status indicator, whether the logical block address is utilized by a different interface node. If the logical block address is not utilized by a different interface node, the interface node tests the corresponding contiguous memory location.

Abstract: A method for quickly calibrating a memory interface circuit from time to time in conjunction with operation of a functional circuit is described. The method uses controlling the memory interface circuit with respect to read data capture for byte lanes, including controlling CAS latency compensation for the byte lanes. In the method control settings for controlling CAS latency compensation are determined and set according to a dynamic calibration procedure performed from time to time in conjunction with functional operation of a circuit system containing one or more memory devices connected to the memory interface circuit. In the method, determining and setting the control settings for controlling CAS latency compensation is performed independently and parallely in each of the byte lanes.

Abstract: A programmable Built In Self Test (pBIST) system used to test embedded memories where the memories may be operating at a voltage domain different from the voltage domain of the pBIST. A plurality of buffer and synchronizing registers are used to avoid meta stable conditions caused by the time delays introduced by the voltage shifters required to bridge the various voltage domains.

Abstract: According to exemplary embodiments, a system, is provided for bit error rate (BER)-based wear leveling in a solid state drive (SSD). A block-level BER value for a block in the SSD is determined. An adjusted PE cycle count for the block is incremented or decremented based on the block-level BER value. Wear leveling is then performed in the SSD based on the adjusted PE cycle count.

Abstract: An automatic retransmission request control system in an OFDM-MIMO communication system includes a retransmission mode selection part which selects a retransmission mode from among (a) a mode in which to transmit the data which are to be retransmitted, via the same antenna as in the previous transmission, while transmitting, at the same time, new data by use of an antenna via which no data retransmission is requested; (b) a mode in which to transmit the data, which are to be retransmitted, via an antenna via which no retransmission is requested, while transmitting new data via another antenna at the same time; (c) a mode in which to use STBC to retransmit the data via an antenna via which no retransmission is requested; and (d) a mode in which to use STBC to retransmit the data via all the available antennas.

Abstract: A method for identifying non stuck-at faults in a read-only memory (ROM) includes generating a golden value of a victim cell, providing a fault-specific pattern through an aggressor cell, generating a test reading of the victim cell in response to the provided fault-specific pattern, and determining whether the ROM has at least one non stuck-at fault. The determination is based on a comparison of the golden value and the test reading of the victim cell.

Abstract: A method for data storage includes receiving in a memory device data for storage in a group of analog memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.

Abstract: A method includes reading, at a memory controller, data from a first dynamic random-access memory (DRAM) die layer of a DRAM stack. The method also includes writing the data to a second DRAM die layer of the DRAM stack. The method further includes sending a request to a test engine to test the first DRAM die layer after writing the data to the second DRAM die layer.

Abstract: A RAM to be diagnosed is divided into n (n being an integer of 3 or greater) pieces of base regions. In an idle time of periodic processing performed in a system in which the RAM is incorporated, two base regions are selected from the divided base regions, and the selected two base regions are diagnosed using a diagnostic method capable of detecting a coupling fault. Thereafter, in an idle time of the periodic processing, operations to select an unselected pair of base regions and diagnose the selected pair are repeated, so as to diagnose all combinations of pairs.

Abstract: Apparatus and methods provide relatively low uncorrectable bit error rates, low write amplification, long life, fast and efficient retrieval, and efficient storage density such that a solid-state drive (SSD) can be reliably implemented using various types of memory cells, including relatively inexpensive multi-level cell flash. One embodiment intelligently coordinates remapping of bad blocks with error correction code control, which eliminates the tables used to avoid bad blocks.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine hardware is configurable for different tests. The test engine identifies a range of addresses through which to iterate a test sequence in response to receiving a software instruction indicating a test to perform. For each iteration of the test, the test engine, via the selected hardware, generates a memory access transaction, selects an address from the range, and sends the transaction to the memory controller. The memory controller schedules memory device commands in response to the transaction, which causes the memory device to execute operations to carry out the transaction.

Abstract: An operating method of a memory controller includes classifying a plurality of blocks in a memory cell array included in a flash memory into a first group and a second group according to the number of error bits in data programmed to each of the blocks, and creating a combinational block by combining a first block from the first group with a second block from the second group.

Abstract: An embodiment of a method for automated test pattern generation (ATPG), a system for ATPG, and a memory configured for ATPG. For example, an embodiment of a memory includes a first test memory cell, a data-storage memory cell, and a test circuit configured to enable the test cell and to disable the data-storage cell during a test mode.

Abstract: A method and apparatus for operation of a memory module for storage of a data word is provided. The apparatus includes a memory module having a set of paired memory devices including a first memory device to store a first section of a data word and a second memory device to store a second section of the data word when used in failure free operation. The apparatus may further include a first logic module to perform a write operation by writing the first and second sections of the data word to both the first memory device and the second memory device upon the determination of certain types of failure. The determination may include that a failure exists in the word section storage of either the first or second memory devices but that no failures exist in equivalent locations of word section storage in the two memory devices.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine receives a command to cause it to generate transactions to implement a memory test. The command identifies the test to implement, and the test engine generates one or more memory access transactions to implement the test on the memory device. The test engine passes the transactions to the memory controller, which can schedule the commands with its scheduler. Thus, the transactions cause deterministic behavior in the memory device because the transactions are executed as provided, while at the same time testing the actual operation of the device.

Abstract: An identification code generation method and a management method for a non-volatile memory, and a controller and a storage system using the same are provided, and the non-volatile memory has a plurality of physical blocks. The identification code generation method includes testing the physical blocks to obtain an availability state of the physical blocks and identifying a plurality of good physical blocks or bad physical blocks among the physical blocks according to the availability state. The identification code generation method also includes generating a memory identification code corresponding to the non-volatile memory according to the good physical blocks or the bad physical blocks. Thereby, in the present invention, a unique memory identification code is generated and is prevented from being stolen.

Abstract: During a garbage collection process for a non-volatile memory device of a storage device, an adaptive copy-back method selectively performs either an external or an internal copy-back operation in view of certain performance conditions for a storage device. The external copy-back operation is performed when a number of error-corrected bits per unit size of read data exceeds a given threshold value, and the internal copy-back operation is performed when the number of error-corrected bits does not exceed the threshold value.

Abstract: A method of correcting stored data includes reading data stored in a portion of a nonvolatile memory. The method includes, for each particular bit position of the read data, updating a count of data error instances associated with the particular bit position in response to detecting that the read data differs from a corresponding reference value of the particular bit position. The reading of the first portion and the updating of the counts of data error instances are performed for a particular number of repetitions. The method includes identifying each bit position having an associated count of data error instances equal to the particular number of repetitions as a recurring error bit position.