Abstract: According to embodiments of the present invention are systems and methods for using scan chains for the creation of unique physically uncloneable function (PUF). In particular, the present invention uses existing circuitry on an integrated circuit and the internal-scan or boundary-scan register to create a unique identifier for each integrated chip. The unique nature of the scan chains results from the inherent variability of the manufacturing process.

Abstract: A method of designing a layout of a semiconductor device includes receiving information on a size of a target chip and a unit placement width for forming a gate line through a self-align double patterning process by a layout design system. The method also includes allocating an input and output area, a hard macro area, and a standard cell area at the target chip, and adjusting a width of the standard cell area by applying a gate generation rule for setting a width of at least one cell row located in the standard cell area to an odd number multiple of the unit placement width. The unit placement width corresponds to a width between centers of a pair of gate lines in the self-align double patterning process.

Abstract: A standard cell for use within an integrated circuit can be partially personalized by local wiring. The standard cell can include a set of transistors, each having a fixed size and position within an established standard cell perimeter. The set of transistors can be partially interconnected to a set of local nodes by local wiring. Customization ports can be arranged on a global wiring layer and electrically connected to the set of local nodes. A set of blockage in shapes can be arranged to identify, on a global wiring layer, areas reserved for personalization wiring. Personalization wiring can be configured to complete the personalization of the standard cell by electrically interconnecting, on the global wiring layer, some of the set of customization ports.

Abstract: The n-type to p-type fin-FET strength ratio in an integrated logic circuit may be tuned by the use of cut regions in the active and dummy gate electrodes. In some examples, separate cut regions for the dummy gate electrodes and the active gate electrode may be used to allow for different lengths of gate pass-active regions resulting in appropriately tuned integrated logic circuits.

Abstract: A MOS IC may include a first contact interconnect in a first standard cell that extends in a first direction and contacts a first MOS transistor source and a voltage source. Still further, the MOS IC may include a first double diffusion break extending along a first boundary in the first direction of the first standard cell and a second standard cell. The MOS IC may also include a second contact interconnect extending over a portion of the first double diffusion break. In an aspect, the second contact interconnect may be within both the first standard cell and the second standard cell and coupled to the voltage source. Additionally, the MOS IC may include a third contact interconnect extending in a second direction orthogonal to the first direction and couples the first contact interconnect and the second contact interconnect together.

Abstract: A method for redistributing cell densities in layout of IC is provided. Initial cell density distribution and routing density distribution are obtained in an initial placement of the IC. White space is inserted into the initial placement according to a specific density value, so as to flatten the initial cell density distribution to the specific density value and obtain a flat cell density distribution. The specific density value is larger than a maximum cell density value within the initial cell density distribution. Cell densities of a first region are increased in the IC according to the routing density distribution and the flat cell density distribution, so as to obtain a modified cell density distribution. The modified cell density distribution is smoothed to obtain a calibrated cell density distribution. The white space is removed from the calibrated cell density distribution to obtain a final placement.

Abstract: A computer-implemented method for designing an integrated circuit includes: performing a simulation on input data or an initial layout to determine whether or not a design constraint has been violated. Upon determining that the design constraint has been violated, a redesign layout is created by adding a cutting area without changing a size of the integrated circuit. The adding a cutting area separates at least one of an active region and a gate line. At least one of the initial layout and the redesign layout is stored in a non-transitory computer readable storage medium.

Abstract: A method for fabricating an interposer wafer includes providing at least one mask having printing regions for forming a plurality of interposer designs; selecting an interposer design; and forming the interposer design on a substrate using a plurality of lithographic imaging steps. For each lithographic imaging step, at least one portion of the interposer design is printed by exposing at least one of the printing regions while blocking at least one other of the printing regions.

Abstract: Embodiments include a computer implemented method comprising: while designing a chip, identifying a plurality of partitions in the chip, for a first partition of the plurality of partitions in the chip, identifying a plurality of pins configured to interconnect the first partition with one or more other partitions of the plurality of partitions of the chip, assigning a name to each of the plurality of pins associated with the first partition of the plurality of partitions, based on the names assigned to each of the plurality of pins, forming a plurality of groups such that each group of the plurality of groups is associated with a corresponding one or more pins of the plurality of pins, and based on forming the plurality of groups, designing a first subset of the plurality of pins to be located at close proximity in the chip.

Abstract: A method of designing an integrated circuit is described. The integrated circuit comprises a plurality of circuit components, including one or more functional components and one or more tile shapes. A pcell instance may be defined to specify a functional component along with one or more tile shapes. The tile shapes are thus associated with the functional component. A netlist may be arranged to specify interconnections between the functional components of the integrated circuit as well as electrical interactions between the tile shapes and functional components. A computer program product for carrying out the method is also described.

Abstract: A method of global connection routing includes determining a global connection tolerance of a cell for use in a circuit layout, wherein the cell comprises a plurality of pins, and a plurality of routing tracks are defined with respect to the cell. The method further includes determining a number of blocked tracks within the cell. The method further includes comparing the global connection tolerance with the number of blocked tracks. The method further includes adjusting a location of the cell within the circuit layout if the global connection tolerance and the number of blocked tracks fail to satisfy a predetermined condition.

Abstract: A computing device translates each of a group of structured language graphical process flow element representations, that each represents within a structured language one node of a captured graphical process flow diagram of a first business process, into one of a group of numerical strings that each represents within a set of data fields the respective node and connections to and from the respective node. The group of numerical strings is sequenced in accordance with values of the respective data fields within each numerical string that represents the respective node and the connections to and from each represented node of the captured graphical process flow diagram of the first business process.

Abstract: A design verification system simulates operation of an electronic device to identify one or more power characteristic vs. temperature (PC-T) curves for the electronic device. Each of the one or more PC-T curves indicates, for a particular reliability characteristic limit, a range of power characteristic values over a corresponding range of temperatures that are not expected to result in the reliability characteristic limit being exceeded. Based on the one or more PC-T curves, the design verification system sets a range of power characteristic limits, over a corresponding range of temperatures, for the electronic device. During operation, the electronic device employs a temperature sensor to measure an ambient or device temperature, and sets its power characteristic (voltage or current) according to the measured temperature and the power characteristic limits.

Abstract: A method of manufacturing a semiconductor device includes providing pre-conductive lines and post-conductive lines for forming a first logic cell and a second logic cell, which are adjacent to each other, and a dummy cell and a third logic cell, which are adjacent to each other. A first conductive line, adjacent to the second logic cell, from among conductive lines of the first logic cell is spaced a first reference distance apart from a second conductive line, adjacent to the first logic cell, from among conductive lines of the second logic cell. A dummy line, which is adjacent to the third logic cell, from among conductive lines of the dummy cell is spaced a second reference distance apart from a third conductive line, which is adjacent to the dummy cell, from among conductive lines of the third logic cell. The second reference distance is greater than the first reference distance.

Abstract: A method comprises receiving, in a computer, an input indicative of a drawing of at least a portion of at least one layer of a semiconductor device. The at least one portion of the at least one layer is compared to corresponding portions in corresponding layers of a plurality of previously defined devices stored in a non-transitory machine readable storage medium. Each layer of at least one of the plurality of previously defined devices for which the corresponding portion in the corresponding layer matches the at least one portion of the at least one layer of the semiconductor device is displayed on a display device.

Abstract: A layout design usable for manufacturing a standard cell includes a first gate pad layout pattern, a first set of channel structure layout patterns overlapping the first gate pad layout pattern, a second gate pad layout pattern, and a second set of channel structure layout patterns overlapping the second gate pad layout pattern. The first gate pad layout pattern extends along a first direction. The second gate pad layout pattern extends along a second direction. The first set of channel structure layout patterns is arranged into a first number of columns each aligned along the first direction. The second set of channel structure layout patterns is arranged into a second number of columns each aligned along the first direction. The first number and the second number are different.

Abstract: A system-on-chip device may include a substrate with an active pattern, a gate electrode crossing the active pattern and extending in a first direction, and a first metal layer electrically connected to the active pattern and the gate electrode. The first metal layer may include a first metal line extending in the first direction and a second metal line spaced apart from the first metal line in the first direction to extend in a second direction crossing the first direction. The first and second metal lines may include first and second sidewalls parallel to the second direction, the first and second sidewalls may face each other, and the first sidewall may have a length that is two or three times a minimum line width.

Abstract: A computer-implemented system and method of compensating for filling material losses in a semiconductor process. The computer-implemented method includes determining using a computer a pattern density difference between a first circuit pattern above a semiconductor substrate and a second circuit pattern adjacent to the first pattern. A dummy pattern is inserted between the first pattern and the second pattern so as to compensate for an estimated loss of filling material induced during electrochemical plating by the pattern density difference exceeding a threshold pattern density difference.

Abstract: Aspects of the disclosed technology relate to techniques for determining expanded canonical forms of layout patterns. Coordinates of vertices of geometric elements in a window of a layout design are first transformed into new coordinates of the vertices, wherein the coordinates of vertices do not comprise clipped coordinates and the transforming comprises: performing a translation on the coordinates of vertices based on differences between maximum and minimum X/Y coordinate values of the vertices. Based on sums of X/Y coordinate values of the new coordinates of the vertices, a canonical form of the geometric elements is determined. The canonical form coordinates of the vertices for a plurality of windows may then be determined. The plurality of windows comprise the window, are centered in the same location as the window, and have different sizes.

Abstract: A layout of a portion of an integrated circuit includes first and second cell structures, each including a first or second dummy gate electrode disposed on a first or second boundary of the corresponding first or second cell structure, a first or second edge gate electrode disposed adjacent to the corresponding first or second dummy gate electrode, and a first or second oxide definition (OD) region having a first or second edge. The second boundary faces the first boundary without abutting the first boundary. The first edge of the first OD region is substantially aligned with the closest edge of the first dummy gate electrode or overlaps the first dummy gate electrode. A distance from the first edge gate electrode to the farthest edge of the first dummy gate electrode is greater than the distance from the first edge gate electrode to the first edge of the first OD region.

Abstract: An improved circuit design system may include a computer processor to perform a placement for a circuit by physical synthesis. The system may also include a controller to compute a preferred location of at least one selected element of the circuit, and to calculate placement constraints for each selected element. The system may further include an updated design for the circuit generated by performing another round of physical synthesis with the placement constraints.

Abstract: Circuitry may include a substrate with an input and an output circuit coupled in series at an intermediate node. The output circuit may have an output transistor and a stack transistor coupled in series between an output node and a voltage supply terminal. The two circuits may be placed on the substrate such that a single event transient charge injected into a sensitive diffusion of the intermediate node is shared through the substrate with the sensitive diffusion of the stack transistor of the output circuit. The charge sharing may reduce the recovery time at the output node and help to reduce the recovery time at the intermediate node, thereby providing increased single event transient robustness and reducing the probability of a permanent flip of the intermediate node and the output node of the circuitry.

Abstract: Layouts of transmission gates and related techniques and systems are described. An integrated circuit may include first and second transmission gates disposed in a column, and metal wires. The first transmission gate includes first and second control terminals, and the second transmission gate includes first and second control terminals. The metal wires extend between the first and second transmission gates in a direction substantially orthogonal to the column, and include a first control wire coupled to the first control terminals of the first and second transmission gates.

Abstract: Generating place and route abstracts, including: for each of a plurality of cells, generating a wire diagram; for each generated wire diagram, generating, in dependence upon a cell architecture layout, a cell architecture description; for each cell architecture description: generating, in dependence upon the wire diagrams and the cell architecture descriptions, a blockage map specifying locations where the placement of cells or routing structures is prohibited; and generating, in dependence upon the blockage maps and one or more design rules, a library exchange format (‘LEF’) abstract.

Abstract: Techniques for automatically completing a partially completed UI design created by a user are described. A UI query including attributes of UI components in the partially completed UI design is created. Example designs with similar UI components are identified. UI components of one such design example are displayed to automatically complete the partially completed UI design (also called an “auto-complete suggestion”). The user can systematically navigate the design examples and accept auto-completed suggestions to include into the partially complete UI design.

Abstract: A method incorporating an antenna and RF circuitry into the object acting as a substrate includes modeling the object as a three-dimensional object, and designing the antenna and RF circuitry for direct placement on the surface of the object. The step of designing is at least partially based on the size, three-dimensional shape, and material properties of the surface of the object acting as the substrate. The step of designing is preferably performed through use of an evolutionary optimizer implemented using parallel computing devices.

Abstract: A system and a method are disclosed for displaying an output of a static timing analysis. A plurality of timing violations of an integrated circuit is identified. The timing violations are associated with a timing path. A reason is identified for each of the timing violations. A priority for fixing the timing violations is determined. Information describing the timing violations is sent for being presented. The information presented includes an information indicating priority associated with timing violations to assist developers in prioritizing tasks for fixing the timing violations.

Abstract: A method for creating double patterning compliant integrated circuit layouts is disclosed. The method allows patterns to be assigned to different masks and stitched together during lithography. The method also allows portions of the pattern to be removed after the process.

Abstract: Among other things, techniques for balancing mask loading are provided for herein. In some embodiments, one or more windows are defined within a layout. Based upon polygons comprised within respective windows, a localized mask loading is computed for the layout. In some embodiments, a global mask loading is also computed for the layout. Using the localized mask loading and the global mask loading, if computed, a loading effect of a plurality of mask pattern schemes is evaluated to identify a mask pattern scheme having a desired loading effect.

Abstract: An apparatus includes a first tier and a second tier. The second tier is above the first tier. The first tier includes a first cell. The second tier includes a second cell and a third cell. The third cell includes a first ILV to couple the first cell in the first tier to the second cell in the second tier. The third cell further includes a second ILV, the first ILV and the second ILV are extended along a first direction. The first tier further includes a fourth cell. The second tier further includes a fifth cell. The second ILV of the third cell is arranged to connect the fourth cell of the first tier with the fifth cell of the second tier. In some embodiments, the second tier further includes a spare cell including a spare ILV for ECO purpose.

Abstract: A computer-implemented method for generating a layout of a design includes invoking the computer to receive a schematic representation of the design, generating a connection graph associated with the design, comparing the connection graph with a plurality of connection graphs stored in a database and selecting a layout associated with the matching connection graph in generating the layout of the design.

Abstract: According to one embodiment, a method is disclosed for designing an integrated circuit by a computer including an input unit, a memory unit, a calculating unit, and an output unit. The method can include storing a design model in the memory unit. The design model has parameters of physical quantities of active elements, passive elements, and an interconnection pattern included in the integrated circuit. The design model has an algorithm generating a circuit layout from values of the parameters. The method can include inputting the values of the parameters based on a first design specification of the integrated circuit by the input unit, generating a first circuit layout of the active elements, the passive elements, and the interconnection pattern by the calculating unit using the design model from the values of the parameters received by the input unit, and outputting the first circuit layout by the output unit.

Abstract: A method of forming a semiconductor structure includes forming a sacrificial conductive material layer. The method also includes forming a trench in the sacrificial conductive material layer. The method further includes forming a conductive feature in the trench. The method additionally includes removing the sacrificial conductive material layer selective to the conductive feature. The method also includes forming an insulating layer around the conductive feature to embed the conductive feature in the insulating layer.

Abstract: Aspects of the present disclosure relate generally to model fitting. A target model having a large number of inputs is fit using a performance model having relatively few inputs. The performance model is learned during the fitting process. Optimal optimization parameters including a sample size, a damping factor, and an iteration count are selected for an optimization round. A random subset of data is sampled based on the selected sample size. The optimization round is conducted using the iteration count and the sampled data to produce optimized parameters. The performance model is updated based on the performance of the optimization round. The parameters of the target model are then updated based on the damping factor and the parameters computed by the optimization round. The aforementioned steps are performed in a loop in order to obtain optimized parameters and fit of the data to the target model.

Abstract: A method analyzes RTL code to determine congestion of a logic design without completing a synthesis phase of a chip design process. The method can include receiving RTL code, and identifying a statement in the RTL code. The method can include determining that the statement in the RTL code corresponds to a structured device group in a component library, wherein the structured device group includes logic devices configured to occupy an area in a predefined spatial arrangement and with predetermined connectivity between the logic devices. The method can include determining congestion associated with the structured device group by performing operations including determining a congestion figure. The method can also include providing, based on the congestion figure, an indication of the congestion associated with the structured device group.

Abstract: A wireless communication system includes: a first communication device, which has a first controller coupled to a first interface configured; and a second communication device, which has a second controller coupled to a second interface configured; wherein at least one of the first controller and the second controller is configured to: transmit data from the first communication device to the second communication device after establishing a connection of the wireless communication between the first communication device and the second communication device; determine, based on one of information regarding the data, information regarding the wireless communication, information regarding the first communication device and information regarding the second communication device, one of a plurality of different cutoff conditions as a cutoff condition; and terminate the connection of the wireless communication which has been performed after the data transmission is completed if the determined cutoff condition is satisf

Abstract: A version control unit may maintain separate version numbers for multiple traits of a single model. In particular, a number of model traits may be identified, such as a model behavior trait, a software architecture trait, a simulation trait and a code generation trait. Version information for each trait may be maintained separately for the single model. Groups of elements of the model, such as graphical objects, relationships among the objects, object parameters, model parameters, etc., may be mapped to the model traits. The version control unit may determine what model elements are changed since a prior version, and identify the model traits to which the changed model elements are mapped. Version numbers for these traits may be incremented, while version numbers for the other traits may be left unchanged.

Abstract: A method for providing a design diagram of a semiconductor device is provided. The method includes generating a circuit diagram representing connections among a supply voltage, a ground voltage and a plurality of components in the semiconductor device and displaying a plurality of layout restrictions on the circuit diagram by using a plurality of graphic symbols.

Abstract: A method and circuit for implementing an enhanced transistor topology with a buried field effect transistor (FET) utilizing the drain of a FinFET as the gate of the new buried FET and a design structure on which the subject circuit resides are provided. A drain area of the fin area of a FinFET over a buried dielectric layer provides both the drain of the FinFET as well as the gate node of a second field effect transistor. This second field effect transistor is buried in the carrier semiconductor substrate under the buried dielectric layer.

Abstract: A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer. The instructions, when executed by the processor, cause the processor to initiate oxidization of a first layer of the capping material to form a first oxidized layer of oxidized material.

Abstract: Disclosed are methods, systems, and articles of manufactures for implementing physical designs by using multiple force models to iteratively morph a layout decomposition. In addition to attractive force model(s) or repulsive force model(s), the physical implementation also uses a containment force model for grouping multiple design blocks or for confining a node of a cell within the boundary of a container. Another aspect is directed at deriving a first force model at the first hierarchical level from a second force model at the second hierarchical level by directly modifying the second model based at least in part on characteristic(s) of the first hierarchical level and of the second hierarchical level. In a design with multiple hierarchies, a cell-based force model is also used to ensure child nodes of a parent cell stay within a close proximity of the parent node of the parent cell.

Abstract: A layout design system includes a processor; a storage unit configured to store a first unit design having a first area, wherein in the first unit design, a termination is not placed on a border thereof; and a design module configured to generate a second unit design having a second area larger than the first area by placing the termination on a border of the first unit.

Abstract: A method, an apparatus, and a computer program product for wireless communication are provided. The apparatus generates a plurality of interconnect patterns for a set of longitudinal channels that are occupied by horizontal interconnects. Each interconnect pattern may be different from the other interconnect patterns. Each interconnect pattern may define relative locations for the set of horizontal interconnects and gap channels. Highest crosstalk is determined for each of the interconnect patterns and the interconnect pattern with the minimum highest crosstalk is selected as a preferred pattern. The highest crosstalk may comprise far-end crosstalk or near-end crosstalk and may be calculated for a range of frequencies or for a plurality of frequencies. The crosstalk may be calculated by modeling the interconnects as transmission lines.

Abstract: The disclosure relates generally to triple-redundant sequential state (TRSS) machines formed as integrated circuits on a semiconductor substrate, such as CMOS, and computerized methods and systems of designing the triple-redundant sequential state machines. Of particular focus in this disclosure are sequential state elements (SSEs) used to sample and hold bit states. The sampling and holding of bits states are synchronized by a clock signal thereby allowing for pipelining in the TRSS machines. In particular, the clock signal may oscillate between a first clock state and a second clock state to synchronize the operation of the SSE according to the timing provided by the clock states. The SSEs has a self-correcting mechanism to protect against radiation induced soft errors. The SSE may be provided in a pipeline circuit of a TRSS machine to receive and store a bit state of bit signal generated by combinational circuits within the pipeline circuit.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

Abstract: A method includes providing a design of a semiconductor device such as a stacked CMOS device comprising a plurality of circuit elements to be assigned into a layout of a plurality of tiers, and identifying at least one first type of circuit element within the plurality of circuit elements based on at least one predetermined criterion. Each respective one of the at least one first type of circuit element is to be assigned to a respective designated one of the plurality of tiers. The method further includes dividing the remainder of the plurality of circuit elements into at least two groups of circuit elements based on circuit density, and assigning the at least one first type of circuit element and the at least two groups of circuit elements to respectively different ones of the plurality of tiers of the semiconductor device.

Abstract: A method for bypassing a defective through silicon via x in a group of n adjacent through silicon vias, includes receiving a plurality of relief signals to identify the defective through silicon via x, activating x?1 switch circuits to connect x?1 data circuits to through silicon vias 1 to x?1 in the group of n adjacent through silicon vias, activating n-x switch circuits to connect n-x data circuits to through silicon vias x+1 to n in the group of n adjacent through silicon vias, and activating a switch circuit to connect a data circuit to an auxiliary through silicon via which is adjacent through silicon via n in the group of n adjacent through silicon vias.

Abstract: An electronic design automation system combines features of discrete EDA/CAD systems and manufacturing systems into a monolithic system to enable a layperson to efficiently design, construct and have manufactured a specific class of custom electronic device, namely a computer processing unit with embedded software. A Graphical User Interface (GUI) is provided as the front-end to a Computer Aided Design (CAD) server that generates sophisticated control and manufacturing instructions that are delivered to a fabrication supply chain, which produces a specified device that is then transported via managed logistics into inventory and ordering systems at vendors for delivery to a designated customer.

Abstract: In congestion aware point-to-point routing using a random point in an integrated circuit (IC) design, the random point is selected in a bounding area defined in a layout of the IC design. A set of pattern routes is constructed between a source pin and a sink pin in the bounding area, a pattern route in the set of pattern routes passing through the random point. A set of congestion cost corresponding to the set of pattern routes is computed. A congestion cost in the set of congestion costs corresponds to a pattern route in the set of pattern routes. A preferred pattern route is selected from the set of pattern routes, the preferred pattern route having the smallest congestion cost in the set of congestion costs. The preferred pattern route is output as a point-to-point route between the source pin and the sink pin.

Abstract: A method includes electrically connecting a plurality of cells of a standard cell library to a power rail. A contact area is deposited to connect a first active area and a second active area of a cell of a plurality cells. The first area and the second area are located on opposite sides of the rail and electrically connected to different drains. The contact area is electrically connected to the power rail using a via. The contact area is masked to remove a portion of the contact area to electrically separate the first active are from the second active area.